Nucleation and Lateral Overgrowth of GaAs on Silicon for Optical Communications

Information

  • NSF Award
  • 8560701
Owner
  • Award Id
    8560701
  • Award Effective Date
    2/1/1986 - 38 years ago
  • Award Expiration Date
    7/31/1986 - 38 years ago
  • Award Amount
    $ 40,000.00
  • Award Instrument
    Standard Grant

Nucleation and Lateral Overgrowth of GaAs on Silicon for Optical Communications

There are presently three ways of bringing optical technology and integrated electronics together. The first is to use silicon and produce a laser with silicon. This seems out of the question, although not entirely. The second is to use gallium arsenide for both optics and circuitry. However, the use of gallium arsenide for circuits is more expensive and difficult than using silicon. The third alternative, and the one which seems most viabale, is that of bringing the silicon circuit technology together with gallium arsenide technology, which is the focus of the present proposal.

  • Program Officer
    Ritchie B. Coryell
  • Min Amd Letter Date
    2/7/1986 - 38 years ago
  • Max Amd Letter Date
    2/7/1986 - 38 years ago
  • ARRA Amount

Institutions

  • Name
    AstroPower, Incorporated
  • City
    Newark
  • State
    DE
  • Country
    United States
  • Address
    Solar Park
  • Postal Code
    197162000
  • Phone Number
    3023660400

Investigators

  • First Name
    James
  • Last Name
    McNeely
  • Email Address
    mcneely@astropower.com
  • Start Date
    2/1/1986 12:00:00 AM

FOA Information

  • Name
    Telecommunications
  • Code
    206000
  • Name
    Engineering-Electrical
  • Code
    55