The entire disclosure of Japanese Patent Application No. 2009-136906 filed on Jun. 8, 2009, including specification, claims, drawings, and abstract is incorporated herein by reference in its entirety.
1. Technical Field
The present invention relates to an offset cancelling circuit which is used for adjustment of an output or the like of a Hall element.
2. Related Art
In recent years, image capturing devices such as a digital still camera and a digital video camera realize higher image quality by increasing the number of pixels of an image capturing element of the image capturing device. On the other hand, as another method for realizing higher image quality of the image capturing device, it is desired to equip the image capturing device with a vibration absorption control circuit having a shake correction function in order to prevent shaking of an imaging target caused by shaking of the hand holding the image capturing device.
A vibration absorption control circuit for shake correction receives a signal from a gyro sensor which detects an angular velocity component generated by vibration of the image capturing device, and drives optical components such as a lens and an image capturing element according to the received signal, to prevent shaking of the imaging target. With such a configuration, even if the image capturing device vibrates, the component of the vibration is not reflected in the obtained image signal, and a high-quality image signal having no image shaking can be obtained.
In this process, a Hall element is used for detecting a position of the optical component such as the lens which is driven. As shown in
Because of this, as shown in
With the provision of the offset cancelling circuit, the offset value of the output voltage of the Hall element can be cancelled.
For the switching elements S1˜S19, MOS transistors are used. The MOS transistor takes advantage of a characteristic that the transistor is switched OFF when a gate-source voltage is less than a threshold voltage and the transistor is switched ON when the gate-source voltage is greater than or equal to the threshold voltage. When the MOS transistor is to be switched OFF, a gate voltage is reduced from the power supply voltage to a voltage less than the threshold voltage. An overlap capacitance exists between the gate and the source and between the gate and the source, and the charge in the channel of the MOS transistor are absorbed by the source and the drain when the transistor is switched OFF. Because of this, when the MOS transistor is switched OFF, a part of an amount of charge calculated as a product of an amount of change of the voltage of the gate and the overlap capacity and an amount of charge stored in the channel would change. This is known as charge injection (noise) of the switching element.
In the offset cancelling circuit 100 also due to the charge injection noise of the switching elements S1˜S19, noise may be superposed on the output voltage from the Hall element, which may be problematic.
Therefore, a technique is desired which reduces the influence of the charge injection noise in the offset cancelling circuit.
According to one aspect of the present invention, there is provided an offset cancelling circuit of a Hall element, comprising a plurality of capacitors, a group of first switching elements to which a voltage is applied from outside such that a current flowing in the Hall element is switched and which are controlled to be switched ON and OFF such that an output voltage of the Hall element is applied to one of the plurality of capacitors in each state, and a group of second switching elements which are controlled to be switched ON and OFF such that an output voltage corresponding to charge which is charged in the plurality of capacitors is output in a state where the plurality of capacitors are connected in parallel to each other, wherein a dummy switching element is connected to at least a part of the group of the second switching elements in such a manner that the dummy switching element and the part of the group of the second switching element are controlled to be switched ON and OFF exclusively with respect to each other.
A preferred embodiment of the present invention will be described i n further detail based on the following drawings, wherein:
The Hall element 10 can be represented as a bridge circuit of resistors R1˜R4. Switching elements S1˜S8 which switch connection points A˜D of the resistors R1˜R4 to a power supply voltage Vcc, ground, or output are connected to the resistors R1˜R4.
The amplifier circuit 12 comprises operational amplifiers 12a and 12b. The operational amplifier 12a amplifies a voltage which is input to a non-inverting input terminal (+) and outputs the amplified voltage. The operational amplifier 12b amplifies a voltage which is input to a non-inverting input terminal (+) and outputs the amplified voltage.
The averaging circuit 20 comprises switching elements S9˜S19, dummy switching elements D1˜D3, capacitors C1˜C4, an operational amplifier 20a, and a reference voltage generating circuit 20b.
The switching elements S9˜S19 connect any of output terminals of the operational amplifiers 12a and 12b, terminals of the capacitors C1˜C4, and an input terminal of the operational amplifier 20a with each other. The switching elements S9˜S12 and S19 are controlled to be switched ON and OFF such that an output voltage corresponding to charge which is charged in the capacitors C1 and C2 is output in a state where the capacitors C1 and C2 are connected in parallel. In other words, the switching elements S9˜S12 and S19 are controlled to be switched ON and OFF such that the capacitors C1 and C2 are connected in parallel with each other and connected to a capacitor C3 for output, and a terminal voltage of the capacitor C3 is input to the operational amplifier 20a. The switching elements S13˜S16 are controlled to be switched ON and OFF such that when a voltage is applied from the outside to switch the current flowing in the Hall element 10, the output voltage of the Hall element 10 is applied to one of the capacitors C1 and C2 in each state. In other words, with the switching elements S13˜S16 controlled to be switched ON and OFF, one of the capacitors C1 and C2 is charged by the output voltage of the Hall element 10. The switching element S17 is used for discharging the charges which are charged in the capacitor C3. The switching element S18 is used for connecting an input terminal and an output terminal of the operational amplifier 20a. The switching elements S9˜S19 preferably have approximately the same degree of element capacitance regardless of whether they are P type or N type.
The dummy switching element is a switching element which is controlled to be switched ON and OFF exclusively with respect to the switching element to which the dummy switching element is connected. The dummy switching element may have a structure wherein the input terminal and the output terminal of the switching element are connected. The input terminal and the output terminal of the dummy switching element which are connected to each other are connected to an input terminal or an output terminal of the switching element to which the dummy switching element is connected. The dummy switching element preferably has an element capacity of approximately ½ of the switching element to which the dummy switching element is connected.
In the present embodiment, the dummy switching elements D1˜D3 are switched OFF when the switching elements S11, S12, and S19 are switched ON, respectively, and are switched ON when the switching elements S11, S12, and S19 are switched OFF, respectively. In other words, the dummy switching elements D1˜D3 are connected to the switching elements S11, S12, and S19 which are a connection destination. The dummy switching elements D1˜D3 have element capacities of approximately ½ of the switching elements S11, S12, and S19, respectively.
An operation of the offset cancelling circuit 200 will now be described. The offset cancelling circuit 200 cancels the offset value of the output voltage of the Hall element 10 and outputs the resulting voltage by switching among a first state, a second state, and an output state, which will be described below.
First, as shown in
In this state, as the switching elements S11, S12, and S19 are in the OFF state, the dummy switching elements D1˜D3 are set to the ON state.
Next, as shown in
In this state, as the switching elements S11, S12, and S19 are in the OFF state, the dummy switching elements D1˜D3 are set to the ON state.
In this manner, voltages are applied to change the direction of the current flowing in the Hall element 10, to switch between the first and second states, and the capacitors C1 and C2 are respectively charged with the Hall voltages V1 and V2 of two directions) (90°) for the four terminals of the Hall element 10.
The charged voltage V1 is a voltage in which an offset voltage Voff is added to the Hall voltage Vhall in the first state. That is, the charged voltage V1=Vhall+Voff. When the current flowing in the Hall element 10 is changed by 90°, the offset voltage Voff of the Hall element 10 is generated in the opposite direction. Therefore, the charged voltage V2 is a voltage in which the offset voltage Voff is subtracted from the Hall voltage Vhall at the second state. That is, the charged voltage V2=Vhall−Voff.
As shown in
In this state, as the switching elements S11, S12, and S19 are in the ON state, the dummy switching elements D1˜D3 are set in the OFF state.
By the offset cancelling circuit 200 being set in the output state, the capacitors C1 and C2 are connected in parallel to each other, charge stored in the capacitors C1 and C2 is re-distributed to the capacitors C1, C2, and C3, and the charged voltages V1 and V2 are averaged. In this manner, the offset value of the output voltage of the Hall element 10 is cancelled, and a voltage is output as the output voltage Vout.
The operation of the dummy switching elements D1˜D3 will now be described with reference to
In a structure where the dummy switching elements D1˜D3 are not provided, as shown in
When the switching elements S11, S12, and S19 are switched ON, as shown in
In the structure where the dummy switching elements D1˜D3 are provided, as shown in
When the switching elements S11, S12, and S19 are switched ON, the dummy switching elements D1˜D3 are switched OFF, and, as shown in
More specifically, the element capacitance of the dummy switching elements D1˜D3 are preferably set to about 0.5 times to 1.5 times the element capacities of the switching elements S11, S12, and S19.
A reason for this is believed to be that, in the structure where the dummy switching elements are connected to the switching elements S13˜S16, after the capacitors C1 and C2 are charged in the first state or the second state, and the switching elements S13˜S16 are switched OFF and the dummy switching elements are switched ON, a part of the charges stored in the capacitors C1 and C2 are sucked by the dummy switching elements.
Therefore, it is preferable to not connect the dummy switching elements to the switching element S13˜S16. That is, in the offset cancelling circuit 200, it is preferable to not connect a dummy switching element to a switching element which is controlled to be switched ON and OFF when a voltage is applied from the outside to switch the current flowing in the Hall element 10 such that the output voltage of the Hall element 10 is applied to one of the capacitors C1 and C2 in each state, and which is used for connecting the output terminals of the operational amplifiers 12a and 12b to the capacitors C1 and C2 in the first state and the second state.
In addition, because the switching elements S9 and S10 are in a low-impedance state after the output state, even if dummy switching elements are connected to the switching elements S9 and S10, the reduction effect of the charge injection noise with respect to the output voltage Vout is not significant. Therefore, it is preferable to not connect the dummy switching elements to the switching elements S9 and S10.
The capacitors C1 and C2 are formed by layering a polysilicon layer 32, an insulating layer 34, and a polysilicon layer 36 over a semiconductor substrate 30. An electrode 38 is formed on a surface of the polysilicon layer 32 in an opening formed by patterning the insulating layer 34 and the polysilicon layer 36. The insulating layer 34 is formed by layering over the polysilicon layer 32, and the polysilicon layer 36 is formed by layering over the insulating layer 34. An electrode 40 is formed on a surface of the polysilicon layer 36. Output terminals are provided to extend from the electrode 38 and the electrode 40.
The capacitors C1 and 02 having such a structure take advantage of the capacitances between the semiconductor substrate 30 and the electrode 38 and between the semiconductor substrate 30 and the electrode 40 while the semiconductor substrate 30 is grounded.
When the capacitors C1 and C2 having such a structure are used, as shown in
If, on the other hand, as shown in
A difference in the reference voltage is caused between the time when the capacitors C1 and C2 are charged and the time when the charges are re-distributed to the capacitors C1, C2, and C3. The difference in the reference voltage is a difference between a center voltage of the Hall element 10 and the reference voltage of the reference voltage generating circuit 20b used in the operational amplifier 20a. In addition to this voltage difference, the influence of the charge due to the parasitic capacitance would cause the offset during comparison at the operational amplifier 20a. By placing the parasitic capacitance Cx in a manner as shown in
As described, according to the present embodiment, the offset voltage of the output voltage of the Hall element can be cancelled and the influence of the charge injection noise on the offset cancelling circuit can be reduced.
Number | Date | Country | Kind |
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2009-136906 | Jun 2009 | JP | national |
Number | Date | Country | |
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20140191790 A1 | Jul 2014 | US |
Number | Date | Country | |
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Parent | 12796167 | Jun 2010 | US |
Child | 14206857 | US |