Patent Application
20190326368
The present disclosure generally relates to the display technique field, and in particular to an organic light-emitting diode (OLED) component, a method for manufacturing the same and an OLED display.
Compared with traditional LCD displays, the OLED display panel can provide fast response, high contrast and wide field of view, and is considered as the next generation display technology. As shown in
The working principle of the OLED component can be explained as follows in reference to
Accordingly, the present disclosure provides an OLED component, a method for manufacturing the same and an OLED display so as to prevent impurities in the pixel define layer from entering into the organic light-emitting unit.
The present disclosure provides an OLED component. The OLED component includes a baseplate; a pixel define layer, an insulation layer and an organic light-emitting unit successively disposed on the baseplate; wherein the pixel define layer defines a light-emitting area, the organic light-emitting unit is located in the light-emitting area, and the insulation layer is arranged between the pixel define layer and the organic light-emitting unit.
The present disclosure provides an OLED display with an OLED component. The OLED component includes a baseplate; a pixel define layer, an insulation layer and an organic light-emitting unit successively disposed on the baseplate; wherein the pixel define layer defines a light-emitting area, the organic light-emitting unit is located in the light-emitting area, and the insulation layer is arranged between the pixel define layer and the organic light-emitting unit.
The present disclosure provides a method for manufacturing an OLED component. The method includes: providing a baseplate; forming an anode of an organic light-emitting unit on the baseplate; forming a pixel define layer on the baseplate; forming an insulation layer on the pixel define layer; forming a rest of the organic light-emitting unit in a light-emitting area defined by the pixel define layer, wherein the rest of the organic light-emitting unit comprises a light-emitting layer and a cathode, and the insulation layer is located between the pixel define layer and the organic light-emitting unit.
By disposing an insulation layer between the pixel define layer and the organic light-emitting unit, the present disclosure may prevent impurities in the pixel define layer from entering into the organic light-emitting unit.
The purpose of the present disclosure is to provide, for a display with OLED component, an insulation layer between the pixel define layer and the organic light-emitting unit. The insulation layer is utilized to prevent impurities such as moisture and oxygen from entering into the organic light-emitting unit. Thus, the implementation of the present disclosure may prevent impurities in the pixel define layer from entering into the organic light-emitting unit so as to improve the photoelectric performance of the organic light-emitting unit and the service life of the OLED component.
The disclosure will now be described in detail with reference to the accompanying drawings and examples. The following embodiments and the features in the embodiments can be combined with each other as long as no conflict is caused. Moreover, the directional terms used in the entire application, such as “up” and “down”, are all for better describing the technical solutions of various embodiments, and are not intended to limit the protection scope of the present application.
The pixel define layer 22 may be utilized to define a light-emitting area of the OLED component 20. The insulation layer 23 may be disposed on the pixel define layer 22. The organic light-emitting unit 24 may be located in the light-emitting area. The organic light-emitting unit 24 may be in direct contact with the insulation layer 23 and may not touch the pixel define layer 22. Specifically, the organic light-emitting unit 24 may include an anode 241, a light-emitting layer 242, a cathode 243, an electron transmission layer and a hole transmission layer. The anode 241 may be disposed on the baseplate 21. The light-emitting layer 242, the electron transmission layer and the hole transmission layer may be arranged between the anode 241 and the cathode 243. The light-emitting layer 242 may be in direct contact with the insulation layer 23, and may not touch the pixel define layer 22.
The insulation layer 23 may be made of transparent insulating material which is capable of insulating water and oxygen, such as silicon dioxide (SiO2), silicon nitride (SiNx), indium tin oxide (ITO) etc. The insulation layer 23 may have a single-layer structure or a multi-layer structure.
Since the insulation layer 23 is located between the organic light-emitting unit 24 and the pixel define layer 22, the insulation layer 23 is capable of insulating impurities such moisture and oxygen emitted from the pixel define layer 22. Thus, the present disclosure may prevent impurities such as moisture and oxygen in the pixel define layer 22 from entering into the organic light-emitting unit 24 so as to improve the photoelectric performance of the organic light-emitting unit 24 and service life of the OLED component 20.
In this embodiment, the insulation layer 23 may only cover a portion of the organic light-emitting unit 24 which is next to the organic light-emitting unit 24, i.e., the insulation layer 23 may not cover the whole outer surface of the pixel define layer 22. In other embodiments, for better insulating water and oxygen, the insulation layer 23 may also cover the whole outer surface of the pixel define layer 22.
Referring to
The structure design and material for the thin film transistor in the TFT layer 212 are not limited in the present disclosure. For example, the thin film transistor may be of a bottom gate type or a top gate type. The metal wires or pattern in the TFT may be made of one of or a combination of ITO, molybdenum (MO), aluminum (AL), titanium (Ti), copper (Cu) and so on. The structure of the OLED component 20 will be further described in reference to the TFT structure shown in
The gate electrode 31, the gate insulation layer 32, the active layer 33, the source electrode 341, the drain electrode 342 and the passivation layer 35 may constitute the thin film transistor in the TFT layer 212. Given that the gate electrode 31 is located below the active layer 33, the OLED component 20 may be consider to have a bottom gate type thin film transistor.
As shown in
It should be understood, the TFT layer 212 may alternatively have a top gate type thin film transistor. The design of a top gate type thin film transistor can be found in prior art and will not be described hereon.
S41: Providing a baseplate.
As shown in
The substrate 51 may be a transparent substrate such as glass substrate, plastic substrate and flexible substrate. The structure design and material for the thin film transistor in the TFT layer 52 are not limited in the present disclosure. For example, the thin film transistor may be of a bottom gate type or a top gate type.
For a bottom type TFT layer 52, the process provided by the present disclosure for manufacturing the TFT may include following blocks.
First, a metal layer may be formed on one surface of the substrate 51 by physical vapor deposition (PVD). Then the metal layer may be patterned and only a portion of the metal layer located in a pre-determined region is kept so as to form the gate electrode. The patterning process may include light resistance material coating, exposing, developing, etching etc. Details of the process may be found in prior art and will not be described hereon.
Second, a gate insulation layer completely covering one surface of the gate electrode may be formed by chemical vapor deposition (CVD). The gate insulation layer may be made of oxide of silicon (SiOx). Or, the gate insulation layer may alternatively include a layer of oxide of silicon and a layer of silicon nitride successively disposed on the gate electrode, such as a layer of SiO2 and a layer of Si3N4, so as to make the gate insulation layer more durable and to improve its insulating performance.
Then, an active layer may be formed by CVD. The active layer may be patterned such that only a portion of the active layer corresponding to the location of the gate electrode is kept. Alternatively, the active layer may directly be formed and patterned by CVD under a mask with the pre-determined pattern.
At last, the source electrode and the drain electrode can be acquired by the same process as that utilized for manufacturing the gate electrode. Also the passivation layer covering the source electrode and the drain electrode may be formed.
Therefore, the required TFT can be obtained by above-described processes.
The planarization layer 53 may cover a whole surface of the TFT. The planarization layer 53 may be formed by CVD or polyimide (PI) coating. Then the via hole exposing the drain electrode may be formed by etching the planarization layer 53 corresponding to the location of the drain electrode of the TFT.
S42: Forming an anode of an organic light-emitting unit on the baseplate.
As shown in
S43: Forming a pixel define layer on the baseplate.
The pixel define layer 55 may be utilized for defining a light-emitting area of the OLED component. The pixel define layer 55 may cover a portion of the anode 541. The pixel define layer 55 may be formed by a patterning process including light resistance material coating, exposing, developing and etching.
S44: Forming an insulation layer on the pixel define layer.
The insulation layer 56 may only cover a portion of the pixel define layer 55 which is next to the organic light-emitting unit 54, i.e., the insulation layer 56 may only covers a portion of the outer surface of the pixel define layer 55. It should be noticed, for better insulating water and oxygen, the insulation layer 56 may cover the whole outer surface of the pixel define layer 55.
The insulation layer 56 may be formed by CVD or a patterning process including light resistance material coating, exposing, developing and etching. Alternatively, the insulation layer 56 may be deposited on the pixel define layer 55 by evaporation under a mask.
S45: Forming a rest of the organic light-emitting unit in a light-emitting area defined by the pixel define layer. The rest of the organic light-emitting unit may include a light-emitting layer and a cathode, and the insulation layer may be located between the pixel define layer and the organic light-emitting unit.
The light-emitting layer 542 and the cathode 543 may be formed by evaporation or printing according to the present disclosure. Obviously, the organic light-emitting unit 54 may further include other structures, such as electron transmission layer and hole transmission layer. These structures can be acquired according to prior art and thus are not shown in the figures.
Furthermore, the cover glass 571 and the dam 572 may be formed so as to encapsulate the structures formed in blocks S41˜S45. Specifically, the dam 572 may be arranged on the planarization layer 53 and surrounding the organic light-emitting unit 54. The cover glass 571 may be disposed on the dam 572 and corresponding to the location of the planarization layer 53. The cover glass 571, the dam 572 and the baseplate 50 cooperatively define a confined chamber in which the other elements of the OLED components 20 may be disposed.
The OLED component manufactured according to the manufacturing method described in this embodiment may have the same structure as the foregoing OLED component 20. Thus, similar advantageous may be achieved.
The foregoing is merely embodiments of the present disclosure, and is not intended to limit the scope of the disclosure. Any transformation of equivalent structure or equivalent process which uses the specification and the accompanying drawings of the present disclosure, or directly or indirectly application in other related technical fields, are likewise included within the scope of the protection of the present disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201810367806.2 | Apr 2018 | CN | national |
The present application is a continuation-application of International (PCT) Patent Application No. PCT/CN2018/092070, field on Jun. 21, 2018, which claims foreign priority of Chinese Patent Application No. 201810367806.2, field on Apr. 23, 2018 in the State Intellectual Property Office of China, the entire contents of which are hereby incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/CN2018/092070 | Jun 2018 | US |
| Child | 16041849 | US |
