Patent Application
20250165181
The present disclosure is related generally to programming, storage, and erase techniques for memory cells in a memory device.
Semiconductor memory is widely used in various electronic devices, such as cellular telephones, digital cameras, personal digital assistants, medical electronics, mobile computing devices, servers, solid state drives, non-mobile computing devices and other devices. Semiconductor memory may comprise non-volatile memory or volatile memory. A non-volatile memory allows information to be stored and retained even when the non-volatile memory is not connected to a source of power, e.g., a battery. As one example, a NAND memory device includes a chip with a plurality of memory blocks, each of which includes an array of memory cells arranged in a plurality of word lines.
A memory device includes a plurality of memory cells and control circuitry configured to operate in both a quad-level cell (QLC) mode and a triple-level cell (TLC) mode. The control circuity is configured to, to operate in the QLC mode, perform at least one of a QLC programming operation and a QLC read operation on one or more of the plurality of memory cells, to operate in the TLC mode, perform a TLC programming operation on one or more of the plurality of memory cells, and selectively switch between the QLC mode and the TLC mode.
In other features, the memory device powers on in the QLC mode. The memory device further includes non-volatile memory that stores first parameters corresponding to operation in the QLC mode and second parameters corresponding to operation in the TLC mode. To operate in the QLC mode, the control circuitry is configured to load the first parameters from the non-volatile memory into operating memory of the memory device. To operate in the TLC mode, the control circuitry is configured to load the second parameters from the non-volatile memory into operating memory of the memory device. To switch between the QLC mode and the TLC mode, the control circuitry is configured to retrieve the first parameters or the second parameters from the non-volatile memory. To switch between the QLC mode and the TLC mode, the control circuitry is configured to perform a multi-parameter load.
In other features, the control circuitry is configured to switch from the QLC mode to the TLC mode in response to a command to perform a TLC programming operation. The control circuitry is configured to switch from the TLC mode to the QLC mode in response to a command to perform at least one of a QLC read operation and a QLC programming operation. The control circuitry is configured to perform a TLC read operation while operating in the QLC mode.
A method of operating a memory device including a plurality of memory cells includes operating in both a quad-level cell (QLC) mode and a triple-level cell (TLC) mode. Operating in both the QLC mode and the TLC mode includes performing at least one of a QLC programming operation and a QLC read operation on one or more of the plurality of memory cells, performing a TLC programming operation on one or more of the plurality of memory cells, and selectively switching between the QLC mode and the TLC mode.
In other features, the method further includes storing, in non-volatile memory, first parameters corresponding to operation in the QLC mode and second parameters corresponding to operation in the TLC mode. Operating in the QLC mode includes loading the first parameters from the non-volatile memory into operating memory of the memory device and operating in the TLC mode includes loading the second parameters from the non-volatile memory into operating memory of the memory device. Switching between the QLC mode and the TLC mode includes retrieving the first parameters or the second parameters from the non-volatile memory. Switching between the QLC mode and the TLC mode includes performing a multi-parameter load.
In other features, the method further includes switching from the QLC mode to the TLC mode in response to a command to perform a TLC programming operation and switching from the TLC mode to the QLC mode in response to a command to perform at least one of a QLC read operation and a QLC programming operation. The method further includes performing a TLC read operation while operating in the QLC mode.
A memory device includes a plurality of memory cells and control means for operating the memory device in both a quad-level cell (QLC) mode and a triple-level cell (TLC) mode. The control means, to operate in the QLC mode, performs at least one of a QLC programming operation and a QLC read operation on one or more of the plurality of memory cells, to operate in the TLC mode, performs a TLC programming operation on one or more of the plurality of memory cells, and selectively switches between the QLC mode and the TLC mode.
In other features, the memory device further includes non-volatile memory that stores first parameters corresponding to operation in the QLC mode and second parameters corresponding to operation in the TLC modem. The control means, to operate in the QLC mode, loads the first parameters from the non-volatile memory into operating memory of the memory device, to operate in the TLC mode, loads the second parameters from the non-volatile memory into operating memory of the memory device, and, to switch between the QLC mode and the TLC mode, retrieves the first parameters or the second parameters from the non-volatile memory. The control means performs a TLC read while operating in the QLC mode.
These and other features and advantages of the present disclosure will become more readily appreciated when considered in connection with the following description of the presently preferred embodiments, appended claims and accompanying drawings, in which:
In the following description, details are set forth to provide an understanding of the present disclosure. In some instances, certain circuits, structures and techniques have not been described or shown in detail in order not to obscure the disclosure.
In general, the present disclosure relates to non-volatile memory apparatuses of the type well-suited for use in many applications. The non-volatile memory apparatus and associated methods of operation of this disclosure will be described in conjunction with one or more example embodiments. However, the specific example embodiments disclosed are merely provided to describe the inventive concepts, features, advantages and objectives with sufficient clarity to permit those skilled in this art to understand and practice the disclosure. Specifically, the example embodiments are provided so that this disclosure will be thorough, and will fully convey the scope to those who are skilled in the art. Numerous specific details are set forth such as examples of specific components, devices, and methods, to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details need not be employed, that example embodiments may be embodied in many different forms and that neither should be construed to limit the scope of the disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail.
Memory cells of NAND memory devices are typically configured to be programmed with one or more bits of data in multiple data states, each associated with a respective threshold voltage Vt range. For example, a single-level cell (SLC) NAND memory device may include memory cells configured to be programmed with and store a single bit of data corresponding to two total data states (e.g., an erased state and a single programmed data state). In another example, multi-level cell (MLC) programming techniques are configured to program cells with two bits of data corresponding to four total data states. Other examples include triple-level cell (TLC; three bits per cell and eight data states) and quad-level cell (QLC; four bits per cell and sixteen data states) memory cell programming techniques.
In some examples, memory devices may be configured to operate only in an SLC mode, a TLC mode, or a QLC mode. In other examples, memory devices may be configured to operate in a “mixed” mode, such as a QLC/SLC mixed mode or a TLC/SLC mixed mode. Due to challenges associated with available space, hardware modifications, and conflicting operating parameters, memory devices are not configured to operate in both a TLC mode and a QLC mode.
Systems and methods according to the present disclosure implement a memory device configured to operate in a QLC/TLC mixed mode. For example, a memory device according to the present disclosure is configured to operate in accordance with both QLC techniques and TLC techniques (e.g., perform programming, read, and erase operations on memory cells in both QLC and TLC modes) and selectively switch between QLC and TLC modes. In one example, a memory device according to the present disclosure is configured to perform SLC read and erase operations while operating in the QLC mode.
A pair of example memory blocks 100, 110 are illustrated in a
One type of non-volatile memory which may be provided in the memory array is a floating gate memory, such as of the type shown in
In another approach, NROM cells are used. Two bits, for example, are stored in each NROM cell, where an ONO dielectric layer extends across the channel between source and drain diffusions. The charge for one data bit is localized in the dielectric layer adjacent to the drain, and the charge for the other data bit is localized in the dielectric layer adjacent to the source. Multi-state data storage is obtained by separately reading binary states of the spatially separated charge storage regions within the dielectric. Other types of non-volatile memory are also known.
The control gate 202, 212, 222 wraps around the floating gate 204, 214, 221, increasing the surface contact area between the control gate 202, 212, 222 and floating gate 204, 214, 221. This results in higher IPD capacitance, leading to a higher coupling ratio which makes programming and erase easier. However, as NAND memory devices are scaled down, the spacing between neighboring cells 200, 210, 220 becomes smaller so there is almost no space for the control gate 202, 212, 222 and the IPD layer 228 between two adjacent floating gates 202, 212, 222.
As an alternative, as shown in
The NAND string may be formed on a substrate which comprises a p-type substrate region 355, an n-type well 356 and a p-type well 357. N-type source/drain diffusion regions sd1, sd2, sd3, sd4, sd5, sd6 and sd7 are formed in the p-type well. A channel voltage, Vch, may be applied directly to the channel region of the substrate.
In some embodiments, a memory cell may include a flag register that includes a set of latches storing flag bits. In some embodiments, a quantity of flag registers may correspond to a quantity of data states. In some embodiments, one or more flag registers may be used to control a type of verification technique used when verifying memory cells. In some embodiments, a flag bit's output may modify associated logic of the device, e.g., address decoding circuitry, such that a specified block of cells is selected. A bulk operation (e.g., an erase operation, etc.) may be carried out using the flags set in the flag register, or a combination of the flag register with the address register, as in implied addressing, or alternatively by straight addressing with the address register alone.
In one possible approach, the length of the plane, in the x-direction, represents a direction in which signal paths to word lines extend in the one or more upper metal layers (a word line or SGD line direction), and the width of the plane, in the y-direction, represents a direction in which signal paths to bit lines extend in the one or more upper metal layers (a bit line direction). The z-direction represents a height of the memory device.
The stack 510 includes a substrate 511, an insulating film 512 on the substrate 511, and a portion of a source line SL. NS1 has a source-end 513 at a bottom 514 of the stack and a drain-end 515 at a top 516 of the stack 510. Contact line connectors (e.g., slits, such as metal-filled slits) 517, 520 may be provided periodically across the stack 510 as interconnects which extend through the stack 510, such as to connect the source line to a particular contact line above the stack 510. The contact line connectors 517, 520 may be used during the formation of the word lines and subsequently filled with metal. A portion of a bit line BL0 is also illustrated. A conductive via 521 connects the drain-end 515 to BL0.
When a memory cell is programmed, electrons are stored in a portion of the charge-trapping layer which is associated with the memory cell. These electrons are drawn into the charge-trapping layer from the channel, and through the tunneling layer. The Vt of a memory cell is increased in proportion to the amount of stored charge. During an erase operation, the electrons return to the channel.
Each of the memory holes 530 can be filled with a plurality of annular layers comprising a blocking oxide layer, a charge trapping layer 563, a tunneling layer 564 and a channel layer. A core region of each of the memory holes 530 is filled with a body material, and the plurality of annular layers are between the core region and the word line in each of the memory holes 530.
The NAND string can be considered to have a floating body channel because the length of the channel is not formed on a substrate. Further, the NAND string is provided by a plurality of word line layers above one another in a stack, and separated from one another by dielectric layers.
A block BLK in a three-dimensional memory device can be divided into sub-blocks, where each sub-block comprises a NAND string group which has a common SGD control line. For example, see the SGD lines/control gates SGD0, SGD1, SGD2 and SGD3 in the sub-blocks SBa, SBb, SBc and SBd, respectively. Further, a word line layer in a block can be divided into regions. Each region is in a respective sub-block and can extend between contact line connectors (e.g., slits) which are formed periodically in the stack to process the word line layers during the fabrication process of the memory device. This processing can include replacing a sacrificial material of the word line layers with metal. Generally, the distance between contact line connectors should be relatively small to account for a limit in the distance that an etchant can travel laterally to remove the sacrificial material, and that the metal can travel to fill a void which is created by the removal of the sacrificial material. For example, the distance between contact line connectors may allow for a few rows of memory holes between adjacent contact line connectors. The layout of the memory holes and contact line connectors should also account for a limit in the number of bit lines which can extend across the region while each bit line is connected to a different memory cell. After processing the word line layers, the contact line connectors can optionally be filed with metal to provide an interconnect through the stack.
In this example, there are four rows of memory holes between adjacent contact line connectors. A row here is a group of memory holes which are aligned in the x-direction. Moreover, the rows of memory holes are in a staggered pattern to increase the density of the memory holes. The word line layer or word line is divided into regions WL0a, WL0b, WL0c and WL0d which are each connected by a contact line 613. The last region of a word line layer in a block can be connected to a first region of a word line layer in a next block, in one approach. The contact line 613, in turn, is connected to a voltage driver for the word line layer. The region WL0a has example memory holes 610, 611 along a contact line 612. The region WL0b has example memory holes 614, 615. The region WL0c has example memory holes 616, 617. The region WL0d has example memory holes 618, 619. The memory holes are also shown in
Each circle represents the cross-section of a memory hole at a word line layer or SG layer. Example circles shown with dashed lines represent memory cells which are provided by the materials in the memory hole and by the adjacent word line layer. For example, memory cells 620, 621 are in WL0a, memory cells 624, 625 are in WL0b, memory cells 626, 627 are in WL0c, and memory cells 628, 629 are in WL0d. These memory cells are at a common height in the stack.
Contact line connectors (e.g., slits, such as metal-filled slits) 601, 602, 603, 604 may be located between and adjacent to the edges of the regions WL0a-WL0d. The contact line connectors 601, 602, 603, 604 provide a conductive path from the bottom of the stack to the top of the stack. For example, a source line at the bottom of the stack may be connected to a conductive line above the stack, where the conductive line is connected to a voltage driver in a peripheral region of the memory device.
The region DL116a has the example memory holes 610, 611 along a contact line 612, which is coincident with a bit line BL0. A number of bit lines extend above the memory holes and are connected to the memory holes as indicated by the “X” symbols. BL0 is connected to a set of memory holes which includes the memory holes 611, 615, 617, 619. Another example bit line BL1 is connected to a set of memory holes which includes the memory holes 610, 614, 616, 618. The contact line connectors (e.g., slits, such as metal-filled slits) 601, 602, 603, 604 from
Different subsets of bit lines are connected to memory cells in different rows. For example, BL0, BL4, BL8, BL12, BL16, BL20 are connected to memory cells in a first row of cells at the right-hand edge of each region. BL2, BL6, BL10, BL14, BL18, BL22 are connected to memory cells in an adjacent row of cells, adjacent to the first row at the right-hand edge. BL3, BL7, BL11, BL15, BL19, BL23 are connected to memory cells in a first row of cells at the left-hand edge of each region. BL1, BL5, BL9, BL13, BL17, BL21 are connected to memory cells in an adjacent row of memory cells, adjacent to the first row at the left-hand edge.
The memory cells of the memory blocks can be programmed to retain one or more bits of data in multiple data states, each of which is associated with a respective threshold voltage Vt range. For example,
The memory structure 1026 can be two-dimensional or three-dimensional. The memory structure 1026 may comprise one or more array of memory cells including a three-dimensional array. The memory structure 1026 may comprise a monolithic three-dimensional memory structure in which multiple memory levels are formed above (and not in) a single substrate, such as a wafer, with no intervening substrates. The memory structure 1026 may comprise any type of non-volatile memory that is monolithically formed in one or more physical levels of arrays of memory cells having an active area disposed above a silicon substrate. The memory structure 1026 may be in a non-volatile memory device having circuitry associated with the operation of the memory cells, whether the associated circuitry is above or within the substrate.
The control circuitry 1010 cooperates with the read/write circuits 1028 to perform memory operations on the memory structure 1026, and includes a state machine 1012, an on-chip address decoder 1014, and a power control module 1016. The state machine 1012 provides chip-level control of memory operations. As discussed in further detail below, the control circuitry 1010 is configured to operate the memory device 1000 in both QLC and TLC modes according to the techniques of the present disclosure.
Turning back to
The on-chip address decoder 1014 provides an address interface that is used by the host or a memory controller to determine the hardware address used by the decoders 1024 and 1032. The power control module 1016 controls the power and voltages supplied to the word lines and bit lines during memory operations. It can include drivers for word lines, SGS and SGD transistors, and source lines. The sense blocks can include bit line drivers, in one approach. An SGS transistor is a select gate transistor at a source end of a NAND string, and an SGD transistor is a select gate transistor at a drain end of a NAND string.
In some embodiments, some of the components can be combined. In various designs, one or more of the components (alone or in combination), other than memory structure 1026, can be thought of as at least one control circuit which is configured to perform the actions described herein. For example, a control circuit may include any one of, or a combination of, control circuitry 1010, state machine 1012, decoders 1014/1032, power control module 1016, sense blocks SBb, SB2, . . . , SBp, read/write circuits 1028, controller 1022, and so forth.
The control circuits can include a programming circuit configured to perform a program and verify operation for one set of memory cells, wherein the one set of memory cells comprises memory cells assigned to represent one data state among a plurality of data states and memory cells assigned to represent another data state among the plurality of data states; the program and verify operation comprising a plurality of program and verify iterations; and in each program and verify iteration, the programming circuit performs programming for the one selected word line after which the programming circuit applies a verification signal to the selected word line. The control circuits can also include a counting circuit configured to obtain a count of memory cells which pass a verify test for the one data state. The control circuits can also include a determination circuit configured to determine, based on an amount by which the count exceeds a threshold, whether a programming operation is completed. For example,
The controller 1022 may comprise a processor 1022c, storage devices (memory) such as ROM 1022a and RAM 1022b and an error-correction code (ECC) engine 1045. The ECC engine can correct a number of read errors which are caused when the upper tail of a Vth distribution becomes too high. However, uncorrectable errors may exist in some cases. The techniques provided herein reduce the likelihood of uncorrectable errors.
The storage device(s) 1022a, 1022b comprise, code such as a set of instructions, and the processor 1022c is operable to execute the set of instructions to provide the functionality described herein. Alternately or additionally, the processor 1022c can access code from a storage device 1026a of the memory structure 1026, such as a reserved area of memory cells in one or more word lines. For example, code can be used by the controller 1022 to access the memory structure 1026 such as for programming, read, and erase operations. The code can include boot code and control code (e.g., set of instructions). The boot code is software that initializes the controller 1022 during a booting or startup process and enables the controller 1022 to access the memory structure 1026. The code can be used by the controller 1022 to control one or more memory structures 1026. Upon being powered up, the processor 1022c fetches the boot code from the ROM 1022a or storage device 1026a for execution, and the boot code initializes the system components and loads the control code into the RAM 1022b. Once the control code is loaded into the RAM 1022b, it is executed by the processor 1022c. The control code includes drivers to perform basic tasks such as controlling and allocating memory, prioritizing the processing of instructions, and controlling input and output ports.
Generally, the control code can include instructions to perform the functions described herein including the steps of the flowcharts discussed further below and provide the voltage waveforms including those discussed further below.
In one embodiment, the host is a computing device (e.g., laptop, desktop, smartphone, tablet, digital camera) that includes one or more processors, one or more processor readable storage devices (RAM, ROM, flash memory, hard disk drive, solid state memory) that store processor readable code (e.g., software) for programming the one or more processors to perform the methods described herein. The host may also include additional system memory, one or more input/output interfaces and/or one or more input/output devices in communication with the one or more processors.
Other types of non-volatile memory in addition to NAND flash memory can also be used.
Semiconductor memory devices include volatile memory devices, such as dynamic random access memory (“DRAM”) or static random access memory (“SRAM”) devices, non-volatile memory devices, such as resistive random access memory (“ReRAM”), electrically erasable programmable read only memory (“EEPROM”), flash memory (which can also be considered a subset of EEPROM), ferroelectric random access memory (“FRAM”), and magnetoresistive random access memory (“MRAM”), and other semiconductor elements capable of storing information. Each type of memory device may have different configurations. For example, flash memory devices may be configured in a NAND or a NOR configuration.
The memory devices can be formed from passive and/or active elements, in any combinations. By way of non-limiting example, passive semiconductor memory elements include ReRAM device elements, which in some embodiments include a resistivity switching storage element, such as an anti-fuse or phase change material, and optionally a steering element, such as a diode or transistor. Further by way of non-limiting example, active semiconductor memory elements include EEPROM and flash memory device elements, which in some embodiments include elements containing a charge storage region, such as a floating gate, conductive nanoparticles, or a charge storage dielectric material.
Multiple memory elements may be configured so that they are connected in series or so that each element is individually accessible. By way of non-limiting example, flash memory devices in a NAND configuration (NAND memory) typically contain memory elements connected in series. A NAND string is an example of a set of series-connected transistors comprising memory cells and SG transistors.
A NAND memory array may be configured so that the array is composed of multiple memory strings in which a string is composed of multiple memory elements sharing a single bit line and accessed as a group. Alternatively, memory elements may be configured so that each element is individually accessible, e.g., a NOR memory array. NAND and NOR memory configurations are examples, and memory elements may be otherwise configured. The semiconductor memory elements located within and/or over a substrate may be arranged in two or three dimensions, such as a two-dimensional memory structure or a three-dimensional memory structure.
In a two-dimensional memory structure, the semiconductor memory elements are arranged in a single plane or a single memory device level. Typically, in a two-dimensional memory structure, memory elements are arranged in a plane (e.g., in an x-y direction plane) which extends substantially parallel to a major surface of a substrate that supports the memory elements. The substrate may be a wafer over or in which the layer of the memory elements is formed or it may be a carrier substrate which is attached to the memory elements after they are formed. As a non-limiting example, the substrate may include a semiconductor such as silicon.
The memory elements may be arranged in the single memory device level in an ordered array, such as in a plurality of rows and/or columns. However, the memory elements may be arrayed in non-regular or non-orthogonal configurations. The memory elements may each have two or more electrodes or contact lines, such as bit lines and word lines.
A three-dimensional memory array is arranged so that memory elements occupy multiple planes or multiple memory device levels, thereby forming a structure in three dimensions (i.e., in the x, y and z directions, where the z-direction is substantially perpendicular and the x-and y-directions are substantially parallel to the major surface of the substrate).
As a non-limiting example, a three-dimensional memory structure may be vertically arranged as a stack of multiple two-dimensional memory device levels. As another non-limiting example, a three-dimensional memory array may be arranged as multiple vertical columns (e.g., columns extending substantially perpendicular to the major surface of the substrate, i.e., in the y direction) with each column having multiple memory elements. The columns may be arranged in a two-dimensional configuration, e.g., in an x-y plane, resulting in a three-dimensional arrangement of memory elements with elements on multiple vertically stacked memory planes. Other configurations of memory elements in three dimensions can also constitute a three-dimensional memory array.
By way of non-limiting example, in a three-dimensional array of NAND strings, the memory elements may be coupled together to form a NAND string within a single horizontal (e.g., x-y) memory device level. Alternatively, the memory elements may be coupled together to form a vertical NAND string that traverses across multiple horizontal memory device levels. Other three-dimensional configurations can be envisioned wherein some NAND strings contain memory elements in a single memory level while other strings contain memory elements which span through multiple memory levels. Three-dimensional memory arrays may also be designed in a NOR configuration and in a ReRAM configuration.
Typically, in a monolithic three-dimensional memory array, one or more memory device levels are formed above a single substrate. Optionally, the monolithic three-dimensional memory array may also have one or more memory layers at least partially within the single substrate. As a non-limiting example, the substrate may include a semiconductor such as silicon. In a monolithic three-dimensional array, the layers constituting each memory device level of the array are typically formed on the layers of the underlying memory device levels of the array. However, layers of adjacent memory device levels of a monolithic three-dimensional memory array may be shared or have intervening layers between memory device levels.
In other examples, two-dimensional arrays may be formed separately and then packaged together to form a non-monolithic memory device having multiple layers of memory. For example, non-monolithic stacked memories can be constructed by forming memory levels on separate substrates and then stacking the memory levels atop each other. The substrates may be thinned or removed from the memory device levels before stacking, but as the memory device levels are initially formed over separate substrates, the resulting memory arrays are not monolithic three-dimensional memory arrays. Further, multiple two-dimensional memory arrays or three-dimensional memory arrays (monolithic or non-monolithic) may be formed on separate chips and then packaged together to form a stacked-chip memory device.
The memory cells of a memory block are typically programmed by applying a voltage differential between a word line of a memory cell and a bit line coupled to the same memory cell, thereby causing electrons to tunnel into the floating gate of that memory cell and causing a threshold voltage of the memory cell to increase. Programming typically occurs sequentially from one word line to another across a memory block or sub-block. In other words, programming occurs with one word line at a time.
The memory device 1000 according to the present disclosure is configured to operate in a QLC/TLC mixed mode. For example, the memory cells of the memory structure 1026 may include memory cells programmed in accordance with QLC techniques (“QLC-programmed memory cells”), memory cells programmed in accordance with TLC techniques (“TLC-programmed memory cells”), or both QLC-programmed and TLC-programmed memory cells. In an example, in a QLC mode, the memory device 1000 is configured to perform a QLC programming operation (i.e., to program memory cells as QLC-programmed memory cells), perform a QLC read operation (i.e., to read QLC-programmed memory cells), perform QLC or TLC erase operations (i.e., to erase QLC-programmed cells or TLC-programmed cells), and perform a TLC read operation (i.e., to read TLC-programmed memory cells).
Conversely, in a TLC mode, the memory device 1000 is configured to perform a TLC programming operation (i.e., to program memory cells as TLC-programmed memory cells), perform a TLC read operation (i.e., to read TLC-programmed memory cells), perform TLC erase operations (i.e., to erase TLC-programmed cells), and perform a TLC read operation (i.e., to read TLC-programmed memory cells). In one example, since the memory device 1000 is configured to perform TLC read and erase operations while in the QLC mode, the memory device 1000 may be configured to perform only TLC programming operations in the TLC mode and remain in the QLC mode for performing TLC read operations. In this manner, the memory device 100 may minimize switching between QLC and TLC modes.
To operate in both QLC and TLC modes, the memory device 1000 is configured to store and operate in accordance with both QLC and TLC operating parameters. For example, as described above with respect to
Typically, the programming, read, and other parameters are stored in a non-volatile memory location (e.g., in non-volatile read only memory (ROM), which may be programmed during manufacture. Systems and methods according to the present disclosure are configured to store parameters for both QLC and TLC modes (e.g., in non-volatile memory of the memory device 1000, such as the ROM 1022a, the host 1040, etc.) and selectively operate in accordance with either QLC or TLC parameters. As one example, upon selection of the QLC or TLC mode, the memory device 1000 loads the corresponding parameters from the ROM 1022a into respective memory locations for use during programming and read operations.
At 1104, the memory device 1000 (e.g., a system comprising the memory device 1000) is powered on, reset, rebooted, etc., such as in response to a power on reset (POR) command. The memory device 1000 may default to QLC mode or TLC mode. In the present example, the memory device 1000 defaults to (e.g., upon power up, reset, reboot, etc.) the QLC mode. At 1108, the method 100 (e.g., the memory device 1000) determines whether to continue in the QLC mode. For example, upon power up, the memory device 1000 may receive a command, instruction, etc. to operate in QLC mode or TLC mode. If yes, the method 1100 continues to 1112. If false, the method 1100 continues to 1116.
At 1112, the method 1100 (e.g., the memory device 1000) loads parameters for operating in the QLC mode. For example, the memory device 1000 loads/transfers QLC parameters from non-volatile memory (e.g., user ROM, such as one or more blocks of user ROM of the ROM 1022a dedicated to storage of the QLC parameters) into operating memory, which may include both volatile and non-volatile memory. In one example, the method 1100 performs a multi-parameter load (MPL), which may include loading the QLC parameters from the user ROM, setting parameters of volatile registers, etc. MPL techniques may be used to load multiple memory operating parameters into a memory device (e.g., in a single operation/command sequence). Memory parameters that are loaded in an MPL including, but are not limited to, read and write voltages, timing information, ECC settings, etc. The memory device 1000 according to the present disclosure is further configured to perform an MPL to load parameters of a selected QLC or TLC mode.
At 1120, the memory device 1000 is operated in the QLC mode. In some examples, operating in the QLC mode may include performing QLC programming, read, and erase operations. In other examples, operating in the QLC mode may further include performing TCL read and erase operations. In other words, when operating in the QLC mode, the memory device 1000 of the present disclosure may be configured to perform QLC programming, read, and erase operations and to perform TCL read and erase operations.
At 1124, the method 1100 (e.g., the memory device 1000) determines whether to continue operating in the QLC mode (or to transition to the TLC mode). For example, at 1124, the method 1100 receives a command or instruction to perform an operation such as a programming operation, a read operation, an erase operation, etc. The command may identify memory cells, a block or sub-block of memory cells, etc. for programming, reading, or erasing, or may identify whether the operation is a QLC or TLC operation. As one example, the method 1100 may continue to operate in the QLC mode in response to a command to perform a QLC programming operation, to read QLC-programmed memory cells, etc.
For example, the memory device 1000, the host 1104, etc. may store information identifying memory cells, blocks of memory cells, sub-blocks of memory cells, etc. that were previously QLC-programmed or TLC-programmed. In examples where the memory device 1000 is configured to perform TLC read operations while in the QLC mode, the memory device 1000 may remain in the QLC mode. Conversely, in examples where the memory device 1000 is not configured to perform TLC read operations while in the QLC mode, the memory device 1000 may transition to the TLC mode.
Similarly, in response to a command to perform a programming operation, the memory device 1000 may remain in the QLC mode in response to (i) the command indicating that the programming operation is a QLC programming operation, (ii) the command corresponding to memory cells dedicated to QLC programming, (iii) a determination that the command does not require TLC programming and the memory device 1000 is configured to default to QLC programming, etc. Conversely, the memory device 1000 may transition to the TLC mode in response to (i) the command indicating that the programming operation is a QLC programming operation, (ii) the command corresponding to memory cells dedicated to TLC programming, etc.
Accordingly, in response to a determination that the memory device 1000 should remain in the QLC mode, the method 1100 continues to 1120. In response to a determination that the memory device 1000 should transition to the TLC mode, the method 1100 continues to 1116.
At 1116, the method 1100 (e.g., the memory device 1000) transitions to the TLC mode. For example, the memory device 1000 loads parameters for operating in the TLC mode by loading/transferring TLC parameters from non-volatile memory, performing an MPL, etc. as describe above with respect to step 1112.
At 1128, the memory device 1000 is operated in the TLC mode. In some examples, operating in the TLC mode may include performing only TLC programming operations (i.e., in examples where the memory device 1000 is configured to perform TLC read and erase operations in the QLC mode). In other examples, operating in the TLC mode may further include performing TCL read and erase operations.
At 1132, the method 1100 (e.g., the memory device 1000) determines whether to continue operating in the TLC mode (or to transition to the QLC mode). For example, at 1132, the method 1100 receives a command or instruction to perform an operation such as a programming operation, a read operation, an erase operation, etc. The command may identify memory cells, a block or sub-block of memory cells, etc. for programming, reading, or erasing, or may identify whether the operation is a QLC or TLC operation. As one example, the method 1100 may continue to operate in the TLC mode in response to a command to perform TLC program operation and transition to the QLC mode in response to a command to perform a QLC programming, read, or erase operation or to perform a TLC read or erase operation.
In examples where the memory device 1000 is configured to perform TLC read operations while in the QLC mode, the memory device 1000 may selectively remain in the TLC mode or transition to the QLC mode. In some examples, the memory device 1000 may default to performing all TLC read operations in the QLC mode. In other examples, the memory device 1000 may default to performing all TLC read operations in a current mode (i.e., perform TLC read operations in the QLC mode when already in the QLC mode but perform TLC read operations in the TLC mode when already in the TLC mode). Conversely, in examples where the memory device 1000 is not configured to perform TLC read operations while in the QLC mode, the memory device 1000 may simply remain in the TLC mode.
In response to a command to perform a programming operation, the memory device 1000 may remain in the TLC mode in response to (i) the command indicating that the programming operation is a TLC programming operation, (ii) the command corresponding to memory cells dedicated to TLC programming, (iii) a determination that the command does not require QLC programming and the memory device 1000 is configured to default to TLC programming, etc. Conversely, the memory device 1000 may transition to the QLC mode in response to (i) the command indicating that the programming operation is a QLC programming operation, (ii) the command corresponding to memory cells dedicated to QLC programming, etc.
Accordingly, in response to a determination that the memory device 1000 should remain in the TLC mode, the method 1100 continues to 1128. In response to a determination that the memory device 1000 should transition to the QLC mode, the method 1100 continues to 1112.
QLC mode. For example, transitioning between QLC and TLC modes, such as performing MPL and/or other parameter switching operations, may cause read performance degradation over time. Accordingly, the memory device 1000 according to the present disclosure may be configured to minimize transitions between QLC and TLC modes.
Performing TLC read operations while in the QLC mode according to the principles of the present disclosure is described in more detail in
As shown in a TLC distribution table 1300, TLC states Er and A-G correspond to QLC states S0, S1, S8, S9, S10, and S12-S15. The top page corresponds to states S1, S3, S7, and S13 in QLC programming and to states A and E in TLC programming. The A and E states correspond to the S1 and S13 QLC states. Accordingly, for a TLC read operation performed in the QLC mode, the only relevant states to be read from the top page correspond to S1 and S13.
Conversely, the middle page corresponds to states S4, S6, S9, and S15 in QLC programming and to states C and G in TLC programming. The C and G states correspond to the S9 and S15 QLC states. Accordingly, for a TLC read operation performed in the QLC mode, the only relevant states to be read from the middle page correspond to S9 and S15.
The lower page corresponds to states S5, S11, and S14 in QLC programming and to states B, D, and F in TLC programming. The B, D, and F states correspond to the S8, S11, and S14 states. In other words, the S8 state corresponding to the TLC B state is not typically read from the lower page of a QLC-programmed memory cell.
An example read of the top page of a TLC-programmed memory cell while in the QLC mode is shown at 1304. In this example, the states S1 and S13 are aligned with the states A and E of the TLC-programmed memory cell. Accordingly, states corresponding to a TLC-programmed memory cell can be readily obtained from the top page in the QLC mode. Similarly, an example read of the middle page of a TLC-programmed memory cell while in the QLC mode is shown at 1308. In this example, the states S9 and S15 are aligned with the states C and G of the TLC-programmed cell. Accordingly, states corresponding to a TLC-programmed memory cell can be readily obtained from the middle page in the QLC mode.
Conversely, in an example read of the lower page of a TLC-programmed memory cell while in the QLC mode as shown at 1312, the state S5 is not exactly aligned with state B of the TLC-programmed cell (which is instead more closely aligned with the state S8). However, since the sensed level of the state S5 in a QLC read operation is very close to the sensed level of the state B in a TLC-programmed memory cells as shown at 1316, executing a lower page S5/S11/S14 read operation in the QLC mode can determine the programmed state of the lower page of a TLC-programmed memory cell.
Various terms are used herein to refer to particular system components. Different companies may refer to a same or similar component by different names and this description does not intend to distinguish between components that differ in name but not in function. To the extent that various functional units described in the following disclosure are referred to as “modules,” such a characterization is intended to not unduly restrict the range of potential implementation mechanisms. For example, a “module” could be implemented as a hardware circuit that includes customized very-large-scale integration (VLSI) circuits or gate arrays, or off-the-shelf semiconductors that include logic chips, transistors, or other discrete components. In a further example, a module may also be implemented in a programmable hardware device such as a field programmable gate array (FPGA), programmable array logic, a programmable logic device, or the like. Furthermore, a module may also, at least in part, be implemented by software executed by various types of processors. For example, a module may comprise a segment of executable code constituting one or more physical or logical blocks of computer instructions that translate into an object, process, or function. Also, it is not required that the executable portions of such a module be physically located together, but rather, may comprise disparate instructions that are stored in different locations and which, when executed together, comprise the identified module and achieve the stated purpose of that module. The executable code may comprise just a single instruction or a set of multiple instructions, as well as be distributed over different code segments, or among different programs, or across several memory devices, etc. In a software, or partial software, module implementation, the software portions may be stored on one or more computer-readable and/or executable storage media that include, but are not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor-based system, apparatus, or device, or any suitable combination thereof. In general, for purposes of the present disclosure, a computer-readable and/or executable storage medium may be comprised of any tangible and/or non-transitory medium that is capable of containing and/or storing a program for use by or in connection with an instruction execution system, apparatus, processor, or device.
Similarly, for the purposes of the present disclosure, the term “component” may be comprised of any tangible, physical, and non-transitory device. For example, a component may be in the form of a hardware logic circuit that is comprised of customized VLSI circuits, gate arrays, or other integrated circuits, or is comprised of off-the-shelf semiconductors that include logic chips, transistors, or other discrete components, or any other suitable mechanical and/or electronic devices. In addition, a component could also be implemented in programmable hardware devices such as field programmable gate arrays (FPGA), programmable array logic, programmable logic devices, etc. Furthermore, a component may be comprised of one or more silicon-based integrated circuit devices, such as chips, die, die planes, and packages, or other discrete electrical devices, in an electrical communication configuration with one or more other components via electrical conductors of, for example, a printed circuit board (PCB) or the like. Accordingly, a module, as defined above, may in certain embodiments, be embodied by or implemented as a component and, in some instances, the terms module and component may be used interchangeably.
“A”, “an”, and “the” as used herein refers to both singular and plural referents unless the context clearly dictates otherwise. By way of example, “a processor” programmed to perform various functions refers to one processor programmed to perform each and every function, or more than one processor collectively programmed to perform each of the various functions.
Where the term “circuit” is used herein, it includes one or more electrical and/or electronic components that constitute one or more conductive pathways that allow for electrical current to flow. A circuit may be in the form of a closed-loop configuration or an open-loop configuration. In a closed-loop configuration, the circuit components may provide a return pathway for the electrical current. By contrast, in an open-looped configuration, the circuit components therein may still be regarded as forming a circuit despite not including a return pathway for the electrical current. For example, an integrated circuit is referred to as a circuit irrespective of whether the integrated circuit is coupled to ground (as a return pathway for the electrical current) or not. In certain exemplary embodiments, a circuit may comprise a set of integrated circuits, a sole integrated circuit, or a portion of an integrated circuit. For example, a circuit may include customized VLSI circuits, gate arrays, logic circuits, and/or other forms of integrated circuits, as well as may include off-the-shelf semiconductors such as logic chips, transistors, or other discrete devices. In a further example, a circuit may comprise one or more silicon-based integrated circuit devices, such as chips, die, die planes, and packages, or other discrete electrical devices, in an electrical communication configuration with one or more other components via electrical conductors of, for example, a printed circuit board (PCB). A circuit could also be implemented as a synthesized circuit with respect to a programmable hardware device such as a field programmable gate array (FPGA), programmable array logic, and/or programmable logic devices, etc. In other exemplary embodiments, a circuit may comprise a network of non-integrated electrical and/or electronic components (with or without integrated circuit devices). Accordingly, a module, as defined above, may in certain embodiments, be embodied by or implemented as a circuit.
It will be appreciated that example embodiments that are disclosed herein may be comprised of one or more microprocessors and particular stored computer program instructions that control the one or more microprocessors to implement, in conjunction with certain non-processor circuits and other elements, some, most, or all of the functions disclosed herein. Alternatively, some or all functions could be implemented by a state machine that has no stored program instructions, or in one or more application-specific integrated circuits (ASICs) or field-programmable gate arrays (FPGAs), in which each function or some combinations of certain of the functions are implemented as custom logic. A combination of these approaches may also be used. Further, references below to a “controller” shall be defined as comprising individual circuit components, an application-specific integrated circuit (ASIC), a microcontroller with controlling software, a digital signal processor (DSP), a field programmable gate array (FPGA), and/or a processor with controlling software, or combinations thereof.
Additionally, the terms “couple,” “coupled,” or “couples,” where may be used herein, are intended to mean either a direct or an indirect connection. Thus, if a first device couples, or is coupled to, a second device, that connection may be by way of a direct connection or through an indirect connection via other devices (or components) and connections.
Regarding, the use herein of terms such as “an embodiment,” “one embodiment,” an “exemplary embodiment,” a “particular embodiment,” or other similar terminology, these terms are intended to indicate that a specific feature, structure, function, operation, or characteristic described in connection with the embodiment is found in at least one embodiment of the present disclosure. Therefore, the appearances of phrases such as “in one embodiment,” “in an embodiment,” “in an exemplary embodiment,” etc., may, but do not necessarily, all refer to the same embodiment, but rather, mean “one or more but not all embodiments” unless expressly specified otherwise. Further, the terms “comprising,” “having,” “including,” and variations thereof, are used in an open-ended manner and, therefore, should be interpreted to mean “including, but not limited to . . . ” unless expressly specified otherwise. Also, an element that is preceded by “comprises . . . a” does not, without more constraints, preclude the existence of additional identical elements in the subject process, method, system, article, or apparatus that includes the element.
The terms “a,” “an,” and “the” also refer to “one or more” unless expressly specified otherwise. In addition, the phrase “at least one of A and B” as may be used herein and/or in the following claims, whereby A and B are variables indicating a particular object or attribute, indicates a choice of A or B, or both A and B, similar to the phrase “and/or.” Where more than two variables are present in such a phrase, this phrase is hereby defined as including only one of the variables, any one of the variables, any combination (or sub-combination) of any of the variables, and all of the variables.
Further, where used herein, the term “about” or “approximately” applies to all numeric values, whether or not explicitly indicated. These terms generally refer to a range of numeric values that one of skill in the art would consider equivalent to the recited values (e.g., having the same function or result). In certain instances, these terms may include numeric values that are rounded to the nearest significant figure.
In addition, any enumerated listing of items that is set forth herein does not imply that any or all of the items listed are mutually exclusive and/or mutually inclusive of one another, unless expressly specified otherwise. Further, the term “set,” as used herein, shall be interpreted to mean “one or more,” and in the case of “sets,” shall be interpreted to mean multiples of (or a plurality of) “one or more,” “ones or more,” and/or “ones or mores” according to set theory, unless expressly specified otherwise.
The foregoing detailed description has been presented for purposes of illustration and description. It is not intended to be exhaustive or be limited to the precise form disclosed. Many modifications and variations are possible in light of the above description. The described embodiments were chosen to best explain the principles of the technology and its practical application to thereby enable others skilled in the art to best utilize the technology in various embodiments and with various modifications as are suited to the particular use contemplated. The scope of the technology is defined by the claims appended hereto.
