Claims
- 1. An optoelectronic device, comprising:
a first ohmic contact on a first surface of a silicon wafer and a second ohmic contact on a first area of a second surface of the silicon wafer; an aluminum nitride layer deposited on a second area of the second surface of the silicon wafer, a portion of the aluminum nitride having diffused into the silicon layer to form a p-n junction in the silicon wafer; a first layer of gallium nitride deposited on the aluminum nitride layer; a layer of indium gallium nitride deposited on the first layer of gallium nitride, the layer of indium gallium nitride having a top surface; a second layer of gallium nitride deposited on a first area of the top surface of the indium gallium nitride layer and an ohmic contact on the second layer of gallium nitride; and a second ohmic contact on a second area of the top surface of the layer of indium gallium nitride.
- 2. The device of claim 1 wherein the thickness of the first and the second gallium nitride layers and the indium gallium nitride layer is in the range from about 0.5 to about 1 micrometers.
- 3. The device of claim 1 further comprising a multi-quantum well heterostructure between the first layer of gallium nitride and the silicon wafer.
- 4. An optoelectronic device, comprising:
a silicon substrate; a layer of semiconductor deposited on the silicon substrate; an ohmic contact with a first area of the layer of semiconductor; a metal-insulator layer on a second area of the layer of semiconductor to form an M-I-S Schottky contact; a layer of a transparent electrode on the metal-insulator layer to form a metal-insulator-semiconductor Schottky contact on the second area of the layer of semiconductor, the layer of transparent electrode having an ohmic contact thereon; a multi-quantum well heterostructure on a third area of the layer of semiconductor; a gallium nitride layer deposited on the multi-quantum well heterostructure and having an ohmic contact; and a layer of a transparent electrode deposited on a part of the layer of gallium nitride, the layer of transparent electrode having an ohmic contact.
- 5. The device of claim 4 wherein the transparent electrode is comprised of fluorine-doped tin oxide.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This patent application is a division of, and claims priority to, commonly owned U.S. patent application Ser. No. 09/738,728, filed Dec. 15, 2000, entitled “One-Chip Micro-Integrated Optoelectronic Sensor,” by David Starikov, Igor Berishev and Abdelhak Bensaoula, which will issue to U.S. Pat. No. 6,608,360 on Aug. 19, 2003, and which is incorporated herein by reference for all purposes.
[0002] This patent application is also related to commonly owned U.S. patent application Ser. No. 10/621,545, filed Jul. 17, 2003, entitled “Measuring Spectral Characteristics Using Filterless Solid State Semiconductor Components,” by David Starikov and Abdelhak Bensaoula, which itself is a continuation-in-part application of the above-referenced and commonly owned U.S. patent application Ser. No. 09/738,728.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09738728 |
Dec 2000 |
US |
Child |
10642907 |
Aug 2003 |
US |