Claims
- 1. A method for producing a thin film semiconductor device with enhanced absorption properties comprising:
- (a) sandblasting one surface of a dielectric substrate such that it randomly scatters incident light, wherein said sandblasted surface includes structures up to 100 .mu.m; and
- (b) depositing a thin film of semiconductor material on said dielectric sandblasted surface of said substrate, such that said structure is more than 50 times larger than the film thickness.
- 2. The method of claim 1 wherein said semiconductor depositing step is performed by glow discharge.
- 3. The method of claim 1 wherein said depositing step is performed by sputtering.
- 4. The method of claim 1 wherein said depositing step is performed by chemical vapor deposition.
- 5. The method of claim 1 further comprising the step of coating the surface of said substrate opposite said sandblasted surface with reflective white material.
- 6. A thin film semiconductor device comprising:
- (a) A dielectric substrate having at least one sandblasted surface which randomly scatters incident light, wherein said sandblasted surface includes structures up to 100 .mu.m;
- (b) A thin film of semiconductor material deposited on said dielectric sandblasted surface, such that said structure is more than 50 times larger than said film thickness; and
- (c) at least one ohmic electrical contact to said semiconductor thin film.
- 7. A thin film semiconductor device as in claim 6, wherein said semiconductor material is an amorphous semiconductor.
- 8. The thin film semiconductor device of claim 7 wherein said semiconductor material is amorphous silicon.
- 9. The semiconductor device of claim 6 wherein said device is a photoconductor further comprising electrode means.
- 10. The semiconductor device of claim 6 wherein the surface of said substrate opposite said sandblasted surface is coated with reflective white material.
- 11. A photovoltaic device comprising:
- (a) a dielectric substrate having at least one sandblasted surface,
- (b) a thin film of a transparent conductor deposited on said sandblasted surface, wherein said sandblasted surface includes structures up to 100 .mu.m,
- (c) a thin film of semiconductor material including at least one junction therein deposited on said transparent conductor, such that said structure is more than 50 times larger than said film thickness,
- (d) a layer of anti-reflective transparent conductive material deposited on said semiconductor material.
Parent Case Info
This is continuation of application Ser. No. 419,158, filed Sept. 17, 1982, abandoned.
US Referenced Citations (4)
Foreign Referenced Citations (2)
Number |
Date |
Country |
56-152276 |
Nov 1981 |
JPX |
57-49278 |
Mar 1982 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
419158 |
Sep 1982 |
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