Claims
- 1. An optical data storage device comprising:
a substrate having oppositely facing first and second surfaces; a first metal/alloy layer overlaying the first surface of the substrate, wherein the first metal/alloy layer comprises tin, antimony and an element selected from the group consisting of indium, germanium, aluminum, and zinc, and; a first dielectric layer overlaying the first metal/alloy layer, wherein the first dielectric layer comprises silicon oxinitride, wherein the first metal/alloy layer is positioned between the substrate and the first dielectric layer.
- 2. The optical data storage device of claim 1 further comprising:
a second metal/alloy layer overlaying the second surface of the substrate, wherein the second metal/alloy layer comprises tin, antimony and an element selected from the group consisting of indium, germanium, aluminum, and zinc, and; a second dielectric layer overlaying the second metal/alloy layer, wherein the second dielectric layer comprises silicon oxynitride, wherein the second metal/alloy layer is positioned between the substrate and the second dielectric layer.
- 3. The optical data storage device of claim 1 wherein the first metal/alloy layer has a cross-sectional thickness between 40 nm and 125 nm.
- 4. The optical data storage device of claim 1 wherein the first dielectric layer has a cross-sectional thickness between 20 nm and 120 nm.
- 5. The optical data storage device of claim 1 wherein the first dielectric layer has a cross-sectional thickness of approximately 60 nm and the first metal/alloy layer has a cross-sectional thickness of approximately 85 nmn.
- 6. The optical data storage device of claim 1 wherein the substrate comprises a rigid material.
- 7. The optical data storage device of claim 1 wherein the metal/alloy layer comprises Sb70Sn15Inl5.
- 8. The optical data storage device of claim 1 wherein the first metal/alloy layer is formed using a sputtering technique.
- 9. The optical data storage device of claim 1 wherein the first metal/alloy layer is formed using a vapor deposition technique.
- 10. The optical data storage device of claim 1 wherein a real part of refractive index for the first dielectric layer is between 1.4 and 2.0.
- 11. The optical data storage device of claim 1 wherein the first surface of the substrate is grooved, wherein grooves of the first surface define raised surface portions, recessed surface portions, and side walls therebetween.
- 12. The optical data storage device of claim 1 wherein the first metal/alloy layer comprises a grooved surface, wherein grooves of the first metal/alloy layer define raised surface portions, recessed surface portions, and side walls therebetween, wherein the raised surface portions are configured to store optical data.
- 13. A method comprising:
forming a first metal/alloy layer overlaying a first surface of a substrate wherein the first metal/alloy layer comprises tin, antimony and an element selected from the group consisting of indium, germanium, aluminum, and zinc, and; forming a first dielectric layer overlaying the first metal/alloy layer, wherein the first dielectric layer comprises silicon oxynitride, wherein the first metal/alloy layer is positioned between the substrate and the first dielectric layer.
- 14. The method of claim 13 further comprising:
forming a second metal/alloy layer overlaying a second surface of the substrate, wherein the second metal/alloy layer comprises tin, antimony and an element selected from the group consisting of indium, germanium, aluminum, and zinc, and; forming a second dielectric layer overlaying the second metal/alloy layer, wherein the second dielectric layer comprises silicon oxynitride, wherein the second metal/alloy layer is positioned between the substrate and the second dielectric layer.
- 15. The method of claim 13 wherein the first metal/alloy layer has a cross-sectional thickness between 40 nm and 125 nm.
- 16. The method of claim 13 wherein the first dielectric layer has a cross-sectional thickness between 20 nm and 120 nm.
- 17. The method of claim 13 wherein the substrate comprises a rigid material.
- 18. The method of claim 13 wherein the metal/alloy layer comprises Sb70Sn15In15.
- 19. The method of claim 13 wherein the first metal/alloy layer is formed using a sputtering technique.
- 20. The method of claim 13 wherein a real part of refractive index for the first dielectric layer is between 1.4 and 2.0.
- 21. An optical data storage device comprising:
a substrate having oppositely facing first and second surfaces; a first metal/alloy layer overlaying the first surface of the substrate, wherein the first metal/alloy layer comprises tin, antimony and indium, and; a first dielectric layer overlaying the first metal/alloy layer, wherein the first dielectric layer comprises silicon oxynitride, wherein the first metal/alloy layer is positioned between the substrate and the first dielectric layer.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of application Ser. No. 09/764,042 entitled “First-Side Dual-Layer Optical Data Storage Disk And Method Of Manufacturing The Same” filed Jan. 16, 2001, which is incorporated herein by reference in its entirety.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09764042 |
Jan 2001 |
US |
Child |
09854333 |
May 2001 |
US |