Patent Application
20160322784
This application claims priority to European patent application No. 15305669.2 filed on Apr. 30, 2015, the entire contents of which is incorporated herein by reference.
The present invention relates to optical devices defining Semiconductor Optical Amplifiers (or SOAs).
In some technical domains, such as telecommunication optical 10 networks, optical amplifiers are important devices that allow optical signals to be transmitted over long distances. To increase the transmission capacity of optical fibres, it has been proposed to use Semiconductor Optical Amplifiers (or SOA) because their gain bandwidth is generally two times greater than the one of the currently used Erbium Doped Fiber Amplifiers (or EDFAs).
Actually there exists two main types of SOA: the polarization sensitive SOA and the polarization insensitive SOA.
Polarization sensitive SOAs offer an output power that is limited to 17 dBm, which is too low for practical applications and notably in telecommunication optical networks.
Polarization insensitive SOAs allow achieving a large output power. An example of polarization insensitive SOA is described in the document of K. Morito and S. Tanaka, “Record High Saturation Power (+22 dBm) and Low Noise Figure (5.7 dB) Polarization-Insensitive SOA Module,” IEEE Photon. Technol. Lett., vol. 17, no. 6, pp. 1298-1300, June 2005. However, the optical bandwidth appears to be quite low (typically 50 to 60 nm).
Therefore there is no solution that allows achieving a wide optical bandwidth and a large output power with a SOA.
So an object of this invention is to improve the situation.
In an embodiment, an optical device comprises a first semiconductor optical amplifier comprising an active region embedded into a waveguide and comprising at least a first section intended for amplifying optical signals when it is crossed by a first current smaller than a chosen value inducing amplification over a large optical bandwidth, and a second section intended for amplifying the optical signals amplified by the first section when it is crossed by a second current greater than this chosen value, to deliver output optical signals with a large power.
This allows achieving an optical device with wide optical bandwidth (due to the in-line combination of first and second sections respectively crossed by first and second currents) and large output power (due to the very high carrier density induced by the second current).
The optical device may include additional characteristics considered separately or combined, and notably:
the first and second sections may have approximately a same length;
in a first variant of embodiment, the active region of the first semiconductor optical amplifier may comprise a third section located upward the first section and intended for preamplifying input optical signals when it is crossed by a third current approximately equal to the chosen value, in order to feed the first section with preamplified optical signals;
the first, second and third sections may have approximately a same length;
in a second variant of embodiment, it may further comprise a second semiconductor optical amplifier comprising an active region embedded into a waveguide and intended for preamplifying input optical signals when it is crossed by a third current approximately equal to the chosen value, in order to output preamplified optical signals, and a variable optical attenuator located between the second and first semiconductor optical amplifiers and coupled to monitoring photodiodes also coupled to input and output of the second and first semiconductor optical amplifiers, and arranged for controlling the power of the outputted preamplified optical signals depending on the power of the input optical signals, to feed the first section of the active region of the first semiconductor optical amplifier with optical signals having an approximately constant power;
the first and second sections of the active region of the first semiconductor optical amplifier and the active region of the second semiconductor optical amplifier may have approximately a same length;
each active region may comprise multiple quantum wells;
each active region may comprise a multiplicity of strained InGaAsP quantum wells or materials containing aluminum.
Some embodiments of an optical device in accordance with embodiments of the present invention are now described, by way of example only, and with reference to the accompanying drawings, in which:
Hereafter is notably disclosed an optical device intended for amplifying optical signals, having wavelengths belonging to a wide optical bandwidth, to output optical signals with large power.
In the following description it will be considered that the optical device is intended for equipping a telecommunication optical network. But this is not mandatory. Indeed, an optical device may equip any apparatus, device or system in which optical signals, having wavelengths belonging to a wide optical bandwidth, need to be amplified. For instance, the invention may be used also to design wide bandwidth and large power Super-Luminescent Diodes (or SLD).
A first example of embodiment of an optical device 10 according to the invention is illustrated in
As illustrated, an optical device 10, according to the invention, comprises at least a first semiconductor optical amplifier 1 comprising an active region 3 embedded into a waveguide 2 and comprising at least first 31 and second 32 sections. The first section 31 is intended for amplifying optical signals when it is crossed by a first current 11 that is smaller than a chosen value 1T inducing amplification over a large optical bandwidth. The second section 32 is intended for amplifying the optical signals amplified by the first section 31 when it is crossed by a second current 12 that is greater than the chosen value 1T, to deliver output optical signals with a large power.
Each section 3j (j=1 or 2) is associated to a couple of electrodes 8j that are intended for being connected to an electronic circuit intended for providing it with its current 1j. So, the first current 11 (j=1) crosses the first section 31 via the couple of electrodes 81, while the second current 12 (j=2) crosses the second section 32 via the couple of electrodes 82.
The expression “greater” means that the second current 12 is preferably at least 20% greater than the chosen value 1T that induces an amplification over a large optical bandwidth.
The resulting gain of the first 31 and second 32 sections is the product of the gain of each section. [003 I ] For instance, the active region 3 may comprise multiple quantum wells (or MQW). In this case, the active region 3 preferably comprises a multiplicity of strained InGaAsP quantum wells. This type of active region is described (with different parameters) in the document of H. Carrère et al., “Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells,” Appl. Phys. Lett., 97, 121101, 2010. As described in this document, this type of active region allows achieving a large optical bandwidth, typically greater than 100 nm, when the carrier density created into the active region by the injected current becomes approximately (i.e. more or less) equal to a density value that depends from the above mentioned chosen value 1T. But the output power of such an active region is quite low (typically 15 dBm).
But thanks to the invention, when the active region 3 is divided in at least two successive sections 3j, with the last one crossed by a second current 12 greater than the chosen value 1T (12>>1T), it offers a large output power Pout that may be greater than 20 dBm because this output power mainly depends from the carrier density in the second (and last) section 32. So, the optical device 10 offers a wide optical bandwidth (due to the in-line combination of first 31 and second 32 sections) and a large output power Pout (due to the very high carrier density induced by the second current 12), as illustrated in the diagram of
In a variant of embodiment the active region 3 may comprise materials containing aluminum.
The first 31 and second 32 sections (and therefore their respective electrodes 8j) may have approximately a same length in order the gain (or amplification factor) be approximately flat. But other configurations are possible.
Since the carrier density is relatively low in the first section 31, the noise figure (or NF) of the optical device 10 is large at low wavelength. This results from the fact that NF is governed by the carrier density at the input of the optical device 10. To overcome this drawback, and to be able to control the output power Pout and possibly the gain tilt whatever the input power Pin of the input optical signals, it is of interest to increase the carrier density upward the first section 31. At least two solutions can be envisaged to obtain such an increase.
A first solution is illustrated in the non-limiting example of
This third section 33 (j=3) is associated to a couple of electrodes 83 that are intended for being connected to an electronic circuit intended for providing it with its third current 13. So, the third current 13 crosses the third section 33 via the couple of electrodes 83.
The first 31, second 32 and third 33 sections (and therefore their respective electrodes 8j) may have approximately a same length in order the gain (or amplification factor) be approximately flat. But other configurations are possible.
Moreover, this third section 33 being a part of the active region 3 it comprises preferably a multiplicity of strained InGaAsP quantum wells, as mentioned before.
This first solution allows decreasing the noise figure of the optical device 10 at low wavelength, but it does not allow controlling the gain tilt.
To be also able to control the gain tilt while decreasing the noise figure, it is preferable to use two amplifications “stages” as illustrated in the non limiting example of
This second semiconductor optical amplifier 4 comprises an active region 3′ embedded into a waveguide 2′ and intended for preamplifying the input optical signals when it is crossed by a third current 13′ approximately equal to the chosen value 1T, in order to output preamplified optical signals.
This active region 3′ is associated to a couple of electrodes 83′ that are intended for being connected to an electronic circuit intended for providing it with its third current 13′. So, the third current 13′ crosses the active region 3′ via the couple of electrodes 83′.
For instance, the first 31 and second 32 sections of the active region 3 of the first semiconductor optical amplifier 1 and the active region 3′ of the second semiconductor optical amplifier 4 may have approximately a same length in order the gain (or amplification factor) be approximately flat. But other configurations are possible.
Also for instance the active region 3′ comprises preferably a multiplicity of strained InGaAsP quantum wells. But in a variant of embodiment this active region 3′ may comprise materials containing aluminum.
The variable optical attenuator 5 is located between the second 4 and first 1 semiconductor optical amplifiers and coupled to monitoring photodiodes (not illustrated in the Figures) that are also coupled to input and output of the second 4 and first 1 semiconductor optical amplifiers.
This combination of variable optical attenuator 5 and monitoring photodiodes is arranged for controlling the power of the outputted preamplified optical signals depending on the power of the input optical signals, to feed the first section 31 of the active region 3 of the first semiconductor optical amplifier 1 with optical signals having an approximately constant power.
Depending on the application requirements, one can either use the first (
Compared to EDFA, an optical device according to the invention allows multiplying the optical bandwidth by at least three (>100 nm), while offering a large output power (>20 dBm), which potentially triples the capacity of optical fibres.
It should be appreciated by those skilled in the art that any block diagram herein represent conceptual views of illustrative circuitry embodying the principles of the invention.
The description and drawings merely illustrate the principles of the invention. It will thus be appreciated that those skilled in the art will be able to devise various arrangements that, although not explicitly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples recited herein are principally intended expressly to be only for pedagogical purposes to aid the reader in understanding the principles of the invention and the concepts contributed by the inventor(s) to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions. Moreover, all statements herein reciting principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to encompass equivalents thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 15305669.2 | Apr 2015 | EP | regional |
