Patent Application
20070280580
The degradation phenomenon found in the above-mentioned experiment cannot be completely solved by the conventional technology shown in
The effect of leveling the distribution of the electric charge accumulated on the +Z plane, and suppressing the fluctuation of the operation point of an optical modulator is considered to be obtained as follows. That is, when the electric charge is unevenly distributed on the +Z plane, the intensity of the electric field effectively applied to two optical waveguides is different when an electric field is applied from an electrode, thereby indicating different amounts of phase change between the two optical waveguides. As a result, chirp is generated or an operation point is moved. If the distribution of electric charge is uniform, the strength of an effective electric field applied to the two optical waveguides changes at the same level. Therefore, the amount of phase modulation applied by two optical waveguides to light does not relatively change. Therefore, no chirp is generated or an operation point does not move. When the electric charge is accumulated on the +Z plane due to unstable spontaneous electric polarization, an undesired influence can be removed by making the charge distribution homogeneous. If a conductive layer is formed near the surface of the +Z plane, the conductive layer is placed at constant electric potential. Therefore, the electric charge accumulated on the +Z plane is attracted at the constant electric potential of the conductive layer, thereby maintaining the distribution of the electric charge at a constant level. As a result, since the distribution of the electric charge accumulated on the +Z plane is constant, an undesired influence on the operation of an optical modulator can be removed.
The amorphous layer is in an amorphous state with the crystal lattice of the substrate disturbed, the material of the crystal layer is the same but different in characteristic, has no spontaneous electric polarization, and indicates higher conductivity than the crystal layer. We have found as a result of an experiment that the operation point of an optical modulator is stable for a heat cycle by having a very thin amorphous layer (having a thickness of about 5˜1000 Å for which an amorphous layer does not lower the electric field from an electrode, or sufficient modulation can be applied to light) on the +Z plane surface. Additionally, since the amorphous layer has the characteristic similar to that of the substrate, no optical absorption occurs even when it is directly formed on the surface of the substrate, thereby causing a transmission loss. Furthermore, since a desired effect can be expected by forming only a very thin layer, the efficiency of applying an electric field does not change.
The components also shown in
The top view in
An amorphous layer is more effective when it is thicker, but since the amorphous portion has little electro-optic effect, there occurs degradation in modulation efficiency when it is extremely thick. Therefore, according to our experiment, the desired thickness is 5˜1000 Å.
The same components also shown in
Although an amorphous layer is effective by covering the waveguide portion on the +Z plane, the largest effect can be expected when the entire +Z plane is covered. That is, since the capacity of the amorphous layer as the earthing is larger when the area of the amorphous layer as a conductive layer becomes larger, the capability of leveling the distribution of the electric charge accumulated on the +Z plane becomes larger. Therefore, an amorphous layer is provided to cover the entire surface of the electric polarization inversion area as shown in the sectional view along the line B-B′ in
The same reference numerals are assigned to the components also shown in
A larger effect can be expected by forming a conductive layer 21 on the side of the substrate and is allowed to contact an amorphous layer 20. That is, the conductive layer 21 and the amorphous layer 20 are incorporated into one unit and functions as the earthing, thereby leveling the distribution of the electric charge generated on the +Z plane on the earthing having a larger capacity, and improving the effect of the present invention. As the conductive layer 21 on the side portion, Si and Ti are excellent because there is no influence on an optical loss. Furthermore, it is preferable that the conductive layer 21 on the side portion is grounded. By grounding the conductive layer 21, the effect as an earthing can be improved, and by providing the conductive layer 21 on the side portion, the wiring for an earthing can be easily connected.
The components also shown in
In the case of an optical modulator of 40 Gbit/s requiring a broad band, the substrate on both sides of the optical waveguide is lowered (ridge groove 23) as a ridge structure. The ridge groove 23 is typically formed in the RIE (reactive ion etching) method. The present invention is also effective when an optical modulator of 40 Gbit/s provided with an electric polarization inversion area. As shown in
The components also shown in
As a method of forming the amorphous layer 20, it is also possible to directly forming a layer in a substrate by emitting an electronic beam other than forming it on the surface in the developing method by a sputter. In this case, the inside of the substrate including a waveguide area is an amorphous layer. In this case, the effect of the present invention also works sufficiently.
The present invention can also be effective using a conductive layer instead of an amorphous layer. An example of a conductive layer can be a thin metal film of Ti, Au, Pt, etc. and a transparent conductive film of ITO, ZnO, etc. However, since the conductive films of these types have optical absorption more or less, it is necessary to carefully consider the thickness of a film, etc.
The temperature cycle shows a change in operation point for a change in temperature when the temperature cycle of 100 cycles at −5° C.˜80° C. The conventional modulator and the modulator according to the present invention are formed in the same process and structure other than the thickness of the amorphous layer of 100 Å, but the present invention indicates an outstanding characteristic. That is, the fluctuation of an operation point of about 8V occurs in the conventional technology while the fluctuation of an operation point of less than lV occurs in the present invention.
The configuration according to the mode for embodying the present invention can also be used with the conventional configuration shown in
| Number | Date | Country | Kind |
|---|---|---|---|
| 2006-151168 | May 2006 | JP | national |
