This invention relates in general to photonics, and in particular to the modulation of photonic structures for achieving non-reciprocal optical effects for various applications, such as optical isolation.
Achieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics, see Soljacic, M. & Joannopoulos, J. D. “Enhancement of nonlinear effects using photonic crystals,” Nature Material 3, 211-219 (2004). The need to overcome this difficulty, moreover, is becoming increasingly urgent, especially with the emergence of silicon nano-photonics, see Pavesi, L. & Lockwood, Silicon Photonics (Springer, Berlin, 2004), Almeida, V. R. Barrios, C. A. Panepucci, R. R. & Lipson, M. All-optical control of light on a silicon chip. See, Nature, 431, 1081-1084 (2004), Miller, D. A. B. “Optical interconnects to silicon,” IEEE J. Sel. Top. Quant. Electron. 6, 1312-1317 (2000), which promise to create on-chip optical systems at an unprecedented scale of integration. In spite of many efforts, there have been no techniques that provide complete on-chip signal isolation using materials or processes that are fundamentally compatible with silicon CMOS process. Here we introduce an isolation mechanism based on indirect interband photonic transition. Photonic transition, as induced by refractive index modulation, see Winn, J. N. Fan, S. Joannopoulos, J. D. & Ippen, E. P. “Interband transitions in photonic crystals,” Phys. Rev. B 59, 1551-1554 (1998), has been recently observed experimentally in silicon nanophotonic structures, see Dong, P. Preble, S. F. Robinson, J. T. Manipatruni, S. & Lipson, M. “Inducing photonic transitions between discrete modes in a silicon optical microcavity,” Phys. Rev. Lett. 100, 033904 (2008). Here we show that a linear, broad-band, and non-reciprocal isolation can be accomplished by spatial-temporal modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process. We further show that non-reciprocal effect can be accomplished in dynamically-modulated micron-scale ring-resonator structures.
To create complete optical signal isolation requires time-reversal symmetry breaking. In bulk optics, this is achieved using materials exhibiting magneto-optical effects. Despite many efforts however see Espinola, R. L. Izuhara, T. Tsai, M.-C. Osgood, R. M. Jr. & Dötsch, H. “Magneto-optical nonreciprocal phase shift in garnet/silicon-on-insulator waveguides,” Opt. Lett. 29, 941-943 (2004), Levy, M. “A nanomagnetic route to bias magnet-free, on-chip Faraday rotators,” J. Opt. Soc. Am. B 22, 254-260 (2005), Zaman, T. R. Guo, X. & Ram, R. J. “Faraday rotation in an InP waveguide,” Appl. Phys. Lett. 90, 023514 (2007), Dotsch, H. et al. “Applications of magneto-optical waveguides in integrated optics: review,” J. Opt. Soc. Am. B 22, 240-253 (2005), on-chip integration of magneto-optical materials, especially in silicon in a CMOS compatible fashion, remains a great difficulty. Alternatively, optical isolation has also been observed using nonlinear optical processes, see Soljaic, M. Luo, C. Joannopoulos, J. D. & Fan, S. “Nonlinear photonic microdevices for optical integrations,” Opt. Lett. 28, 637-639 (2003), Gallo, K. Assanto, G. Parameswaran, K. R. and Fejer, M. M. “All-optical diode in a periodically poled lithium niobate waveguide,” Appl. Phys. Lett. 79, 314-316 (2001), or in electro-absorption modulators, see Ibrahim, S. K. Bhandare, S. Sandel, D. Zhang, H. & Noe, R. “Non-magnetic 30 dB integrated optical isolator in III/V material,” Electron. Lett. 40, 1293-1294 (2004). In either case, however, optical isolation occurs only at specific power ranges, see Soljaic, M. Luo, C. Joannopoulos, J. D. & Fan, S. “Nonlinear photonic microdevices for optical integrations,” Opt. Lett. 28, 637-639 (2003), Gallo, K. Assanto, G. Parameswaran, K. R. and Fejer, M. M. “All-optical diode in a periodically poled lithium niobate waveguide,” Appl. Phys. Lett. 79, 314-316 (2001), or with associated modulation side bands, see Ibrahim, S. K. Bhandare, S. Sandel, D. Zhang, H. & Noe, R. “Non-magnetic 30 dB integrated optical isolator in III/V material,” Electron. Lett. 40, 1293-1294 (2004). In addition, there have been works aiming to achieve partial optical isolation in reciprocal structures that have no inversion symmetry (for example, chiral structures). In these systems, the apparent isolation occurs by restricting the allowed photon states in the backward direction, and would not work for arbitrary backward incoming states. None of the non-magnetic schemes, up to now, can provide complete optical isolation.
At least a first photonic structure is provided that has two separate photonic bands, and a refractive index. The refractive index of the at least first photonic structure is modulated, so that light supplied to the at least first photonic structure and initially in a first one of the photonic bands traveling along a forward direction in the at least first photonic structure is converted to light in a second one of the photonic bands, and light in the first photonic band traveling along a backward direction opposite to the forward direction in the at least first photonic structure is not converted and remains in the first photonic band. Non-reciprocal is thus achieved with respect to light traveling in the forward and backward directions.
The conversion of light from one photonic band to another is done, either with, or without altering a polarization state of the light. Also preferably, the band width of the two separate photonic bands are not less than about 0.1% of the wavelength of the light, and more preferably not less than about 0.2% of the wavelength of the light. Where a companion photonic structure that is aligned with and coupled to the at least first photonic structure is used together with the at least first photonic structure, the band width of the two separate photonic bands are not less than about 1% of the wavelength of the light, and more preferably not less than about 2% of the wavelength of the light.
Another embodiment of the invention is directed to an interferometer and a method for creating non-reciprocity using the interferometer, comprising a first and a second photonic structure coupled to the at least first photonic structure at two coupler regions, said first photonic structure having two separate photonic bands and a refractive index. The refractive index of the first photonic structure is modulated, so that light supplied to the first photonic structure and initially in a first one of the photonic bands traveling along a forward direction in the at least first photonic structure is converted to light in a second one of the photonic bands, and light in the first photonic band traveling along a backward direction opposite to the forward direction in the at least first photonic structure is not converted and remains in the first photonic band. Light supplied to a first end of the first photonic structure and initially in the first photonic band traveling along a forward direction in the photonic structures will pass to a second end of the first photonic structure, and light supplied to the second end of the first photonic structure and traveling along a backward direction in the photonic structures will pass to an end of the second photonic structure. As a result, light passing through the first photonic structure acquires a non-reciprocal phase. A non-reciprocal device can then be constructed through the interferometer set up.
a) shows a bandstructure of a silicon waveguide. The width of the waveguide is 0.22 μm. The angular frequency and wavevectors are normalized with respect to a=1 μm. The dots indicate modes at frequencies ω1 and ω2 in the first and second bands. The arrows indicate frequency and wavevector shift as induced by a dynamic modulation shown in
a)-2(d) illustrate nonreciprocal frequency conversion in a waveguide.
a) shows the spatial evolution of the photon flux N of two modes, when a phase-matching modulation is applied to the waveguide. The two solid lines are analytical theory and circles are FDTD simulation.
b) shows the spectrum of photon flux in the incident pulse.
c)-2(d) show the transmitted photon flux spectra, when the pulse in
a)-4(d) illustrate the field distribution and frequency response of the modulated coupled ring-waveguide structure with incident direction from the left (
a) illustrates an optical isolator structure of a Mach-Zehnder interferometer. The dynamic index modulation is applied to the waveguide in the dashed line box.
b) illustrates the structure of the modulated silicon waveguide in the Mach-Zehnder interferometer of
c) illustrates the dispersion relation of the TE modes in the Mach-Zehnder interferometer of
a) illustrates transmission spectra for the Mach-Zehnder isolator without modulation loss between ports A and D of
b) illustrates transmission spectra for the Mach-Zehnder isolator with modulation loss between ports A and D of
a) illustrates a bandstructure of a photonic crystal.
b) illustrates the dielectric constant of the photonic crystal structure.
c) illustrates the profile of perturbation at three sequential time steps in photonic crystal structure of
a) illustrates a two dimensional double waveguide structure.
c) illustrates a dispersion relation of a double waveguide with d=0.556 w. The dashed lines represent the required wavevectors for resonant condition in ring structure. The arrow indicates a photonic transition induced by modulation.
a) illustrates a structure of an isolator based on ring resonator.
b) illustrates the transmission spectra for structure in
For convenience in description, identical components are labeled by the same numbers in this application.
We have shown that complete optical isolation can be achieved dynamically, by inducing indirect photonic transitions in an appropriately designed photonic structure. The photonic structure can be a waveguide, such as one made of a dielectric material. It was shown theoretically, see Winn, J. N. Fan, S. Joannopoulos, J. D. & Ippen, E. P. “Interband transitions in photonic crystals,” Phys. Rev. B 59, 1551-1554 (1998), that when subject photonic structures to temporal refractive index modulation, photon states can go through interband transitions, in a direct analogy to electronic transitions in semiconductors. Such photonic transitions have been recently demonstrated experimentally in silicon micro-ring resonators, see Dong, P. Preble, S. F. Robinson, J. T. Manipatruni, S. & Lipson, M. “Inducing photonic transitions between discrete modes in a silicon optical microcavity,” Phys. Rev. Lett. 100, 033904 (2008). Building upon these advancements, here we show that by appropriately design a bandstructure, and by choosing a spatially and temporally varying modulation format that simultaneously imparts frequency and momentum shifts of photon states during the transition process, (
We start by demonstrating such dynamic processes in a silicon waveguide. The waveguide (assumed to be two-dimensional) is represented by a dielectric distribution εs(x) that is time-independent and uniform along the z-direction. Such a waveguide possesses a band structure as shown in
ε′(x,z,t)=δ(x)cos(Ωt−qz) (1)
Here the modulation frequency (of the modulating device) Ω=ω2−ω1. We assume the wavevector q that approximately satisfies the phase-matching condition, i.e. Δk=k2−k1−q≈0. In the modulated waveguide, the electric field becomes:
E(x,z,t)=a1(z)E1(x)ei(−k
where E1,2(x) are the modal profiles, normalized such that |an|2 is the photon number flux carried by the n-th mode. By substituting equation (2) into the Maxwell's equations, and using slowly varying envelope approximation, we can derive the coupled mode equation:
is the coupling strength. With an initial condition a1(0)=1 and a2(0)=0, the solution to equation (3) is:
In the case of perfect phase-matching, i.e. Δk=0, a photon initially in mode 1 will make a complete transition to mode 2 after propagating over a distance of coherence length
In contrast, in the case of strong phase-mismatch, i.e. |Δk|>>=0, the transition amplitude is negligible. The term coherence length as used herein means the distance of travel of light propagation in the photonic structure after which there is complete conversion from one mode to the other mode (i.e. from one photonic band to the other photonic band). The modulation device can be one that generates acoustic waves. See, for example, any one for the followings references:
Alternatively, the modulation device can be one that injects holes and electrons. See for example, Xu et al., “Micrometre-Scale Silicon Electro-Optic Modulator”, Nature, Vol 435., No. 19, May 2005, pp. 325-27.
The system as shown in
To verify the theory above, we numerically simulate the dynamic process by solving Maxwell equations with finite-difference time-domain (FDTD) method, see Taflove, A. & Hagness, S. C. “Computational Electrodynamics: the Finite-Difference Time-Domain Method,” 2nd ed. (Artech House, Boston, 2000). For concreteness, the width of the waveguide is chosen to be 0.22 μm, such that the waveguide supports a single TE mode at the 1.55 μm wavelength range. To maximize the coupling strength, the modulation region is chosen to occupy half of the waveguide width (
and mode 2 at
For visualization purposes, we choose large modulation strength
in equation (1)) such that the effect can be observed with a relatively short waveguide.
In the simulation, we first choose the length of the modulation region (=20 a) to be much longer than the coherence length. A continuous wave at ω1 is launched at the left end of the structure. As the wave propagates along the +z direction, part of the amplitude is converted to ω2. The intensities of the waves at the two frequencies oscillate sinusoidally along the propagation direction (
We now demonstrate non-reciprocal frequency conversion, by choosing the length of the modulation region to be the coherence length L=lc (
In
Using the theory of equation (3), we now perform designs assuming index modulation strength of δ/ε=4.75×10−3, and a modulation frequency of 10 GHz, both of which are achievable in state-of-the-art silicon modulators, see Doug, P. Preble, S. F. Robinson, J. T. Manipatruni, S. & Lipson, M. “Inducing photonic transitions between discrete modes in a silicon optical microcavity,” Phys. Rev. Lett. 100, 033904 (2008), Preble, S. F. Xu, Q. & Lipson, M. “Changing the colour of light in a silicon resonator,” Nature Photonics, 1, 293-296 (2007). Such a modulation induces a transition from a 1st band mode at 1.55 μm to a 2nd band mode 10 GHz higher in frequency. With a choice of the width of the waveguide at 0.27 μm, complete non-reciprocal conversion occurs with a coherent length lc=239 μm.
This waveguide width of 0.27 μm is chosen to create transitions between two parallel bands with matching group velocity. Such a parallel band configuration is optimal since it ensures broadband operation: A modulation that phase-matches between (ω1,k1) and (ω2=ω1+Ω,k2=k1+q) automatically phase-matches for all incident frequencies in the vicinities of ω1. For this device, our calculation indicates that, over a frequency bandwidth of 1.2 THz, the conversion efficiency is above 99% for the forward direction at the coherence length, and below 0.1% for the backward direction. Thus such a device can operate over broad range of frequencies, or wavelengths, such as not less than about preferably 0.1%, or more preferably, 0.2% or 0.3% of the wavelength of the light (e.g. 5 nm for 1.55 μm wavelength).
In general, non-reciprocal effects can also be observed in intraband transitions. However, since typically Ω<<ω1, and the dispersion relation of a single band can typically be approximated as linear in the vicinity of ω1, cascaded process, see Dong, P. Preble, S. F. Robinson, J. T. Manipatruni, S. & Lipson, M. “Inducing photonic transitions between discrete modes in a silicon optical microcavity,” Phys. Rev. Lett. 100, 033904 (2008), which generates frequencies at ω1+nΩ with n>1, is unavoidable, and it complicates the device performance. In contrast, our use of interband transition here eliminates the cascaded processes.
Ring Resonator Structures
Further reduction of the device footprint can be accomplished using resonator structure. As a concrete example, we form a ring resonator (
are both resonant. In other words, the circumference of the ring resonator is an integer multiple of at least one wavelength in each of the two photonic bands.
The ring is coupled to an external waveguide. The edge-to-edge distance between the ring and the external waveguides is 0.18 μm, which leads to external quality factors of Qc1=3426 and Qc2=887 for these two modes respectively due to waveguide-cavity coupling. The two modes also have radiation quality factors of Qr1=1.9×104 and Qr2=2.3×104. The modulation area consists of an array of discrete regions along the ring (
which results in a coherent length of lc=250 μm. Thus the ring circumference is far smaller than the coherence length.
a) and 4(b) show the simulation of the structure with steady state input. Incident light at ω1 from the left (
Finally, the photonic transition effect studied here is linear in the sense that the effect does not depend upon the amplitude and phase of the incident light. Having a linear process is crucial for isolation purposes because the device operation needs to be independent of the format, the timing and the intensity of the pulses used in the system. In conclusion, the structure proposed here shows that on-chip isolation can be accomplished with dynamic modulation, in standard material systems that are widely used for integrated optoelectronic applications.
Photonic transitions in waveguides can create nonreciprocal phase response for counter-propagating modes. Such effect can be used in Mach-Zehnder interferometers to form optical isolators and circulators. Performance of such device is analyzed using coupled mode theory given the experimentally available modulation in silicon. The proposed scheme can provide a broad band (>0.8 THz) with a contrast ratio (>20 dB) optical isolation at telecommunication wavelength.
The lack of physical mechanism for on-chip signal isolation has been a fundamental roadblock in integrated optics, see, M. Soljacic, and J. D. Joannopoulos, Nature Material 3, 211 (2004). Magneto-optical materials, commonly used in bulk optics for signal isolation purposes, prove to be very difficult to integrate especially on a silicon photonics platform see, R. L. Espinola, T. Izuhara, M. C. Tsai, R. M. Jr. Osgood, and H. Dötsch, Opt. Lett. 29, 941 (2004), M. Levy, J. Opt. Soc. Am. B 22, 254 (2005), T. R. Zaman, X. Guo, and R. J. Ram, Appl. Phys. Lett. 90, 023514 (2007), H. Dötsch, N. Bahlmann, O. Zhuromskyy, M. Hammer, L. Wilkens, R. Gerhardt, P. Hertel, and A. F. Popkov, J. Opt. Soc. Am. B 22, 240 (2005). Thus, there has been intense interest for developing optical isolation schemes without using magneto-optical effects, see M. Soljaic, C. Luo, J. D. Joannopoulos, and S. Fan, Opt. Lett. 28, 637 (2003), K. Gallo, G. Assanto, K. R. Parameswaran, and M. M. Fejer, Appl. Phys. Lett. 79, 314 (2001), Z. Yu and S. Fan, Nature Photonics 3, 91 (2009). In this context, here we introduce a dynamic isolator structure, as shown in
The proposed device in
In this letter, we present an alternative geometry for constructing an optical isolator. The geometry consists of a Mach-Zehnder interferometer, in which one arm of the interferometer consists of the waveguide that is subject to the dynamic modulation described above. The portion of the waveguide in the dashed line box in the upper waveguide of
We describe the Mach-Zehnder isolator by first briefly reviewing the inter-band transition process in a silicon slab waveguide. The width d of the waveguide (
In the modulated waveguide, the transition process is described by writing the total electric fields in the waveguide as
where Ei are modal profiles normalized such that |ai|2 represent the photon number flux. Assuming incident light into the modulated waveguide having the lower frequency ω1 (
where Δk=k2(ω2)−k1(ω1)+q is the phase mismatch, and the coherent length
characterizes the effect of modulation, and is referred to as the modulation strength factor below. νgi are the group velocities of the two modes. In arriving at the final result in Eq. (R2), we have assumed that the modulation frequency is small compared with the optical frequency, hence ω1≈ω2. Here, and also in the rest of the paper, we have assumed that the two bands have similar group velocity, i.e. νg1=νg
We now consider the property of the Mach-Zehnder interferometer of
where bμ/l is the input or output amplitudes in the upper/lower arm and φp is the phase due to propagation only. T, as defined in Eq. (R1), is the amplitude transmission coefficient for the modulated waveguide.
To describe the isolator action, we first consider light injected into port 1. Assuming a phase-matching modulation, i.e. Δkf=k2(ω2)−k1(ω1)+q=0, and a length of modulated region L=2lc, from Eq. (R1) we have T=−1, and a2(L)=0. Hence, the modulation does not create any frequency conversion. Instead its sole effect is to induce an extra π phase shift in addition to the propagation phase. As a result, all power ends up as output in port 3.
We now consider the time-reversed scenario where light is injected into port 3 instead. In the modulated waveguide region, the light propagates in the backward direction, and in general the phase matching condition is not satisfied. Suppose the same modulation is strongly phase-mismatched in the backward direction, i.e.
Δkb·L=Δkb·2lc>>1 (R4)
from Eq. (R1) then we have T≈1. Thus, the output completely ends up in port 2. The device therefore functions as a four-port circulator that clearly exhibits strong non-reciprocal behavior.
We now discuss the physical constraints that allow Eq. (R4) to be satisfied in the backward direction. For most electro-optic or acoustic-optic modulation schemes, the modulation frequency Ω<<ω1. In the backward direction, among all possible transitions, the one between the mode at (ω1,−k1(ω1)) and a lower frequency mode (ω1−Ω, −k2(ω1−Ω)) in the 2nd band (green dot in
Combining with the results of coherence length (Eq. (R2)), the condition of Eq. (R4) is then transformed to:
Remarkably, we note that the effects of weak refractive index modulation and low modulation frequency cancel each other out in Eq. (R5). And it is precisely such a cancellation that enables the construction of dynamic isolators with practical modulation mechanisms.
We now give a numeric example. The width of the silicon slab waveguide (εs=12.25) is chosen as d=0.268 μm such that the first and second bands have approximately the same group velocity for the operation wavelength around 1.55 μm. We consider a modulation frequency Ω/2π=20 GHz and modulation strength δ/εs=5×10−4, which can be achieved by carrier injection/extraction schemes, see R. A. Soref, and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987), L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, Electron. Lett. 43, 1196 (2007), Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, Nature 435, 325 (2005). The spatial period of the modulation is 2π/q=0.88 μm. Such a modulation satisfies the phase-matching condition between a fundamental mode at
THz and a 2nd band mode that is 20 GHz higher, both propagating in the forward direction. The resulting coherent length for this inter-band transition is lc=2.2 mm. In the backward direction, we have Δkblc=6.7, which is sufficient to satisfy the condition of Eq. (R4).
We apply such modulation to one arm of the Mach-Zehnder interferometer, as shown in
A dielectric constant modulation based on carrier injection also induces propagation loss. The required dielectric modulation strength δ/εs=5×10−4 results in a propagating loss of 1.5 cm−1 in silicon, see R. A. Soref, and B. R. Bennett, IEEE J. Quantum Electron. 23, 123 (1987)
To balance the loss in the interferometer, the same propagation loss is applied to a region of length L in the lower waveguide. In such a situation, the insertion loss is increased to around 6.5 dB while the contrast ratio in transmission between the two counter-propagating directions remains approximately the same as the lossless case (
In
We show here directional mode conversion can be achieved by using indirect interband transition in photonic crystals.
Complete Optical Isolation Created by Indirect Interband Photonic Transitions
Theory of Non-Reciprocal Frequency Conversion in a Ring Resonator:
To describe the ring resonator system (Supplementary Figure), we consider the transition between two anti-clockwise rotating resonances in the ring. These resonances have frequencies ω1 and ω2, and wavevectors in the ring-waveguide k1 and k2 respectively. For these two modes, the coupler is described by:
Here the subscripts label the two frequencies. A1,2 and a1,2 (B1,2 and b1,2) are the photon flux amplitudes in the external and ring waveguides before (after) the coupler. The transmit and transfer coefficients r, t are real, see Haus, H. A. Waves and fields in optoelectronics. (Prentice-Hall, Inc., Englewood Cliffs, N.J. 1984), and r1,22+t1,22=1. In the ring, the two resonances are coupled by applying a dielectric constant modulation along the ring with a profile δ(x)cos [(ω1−ω2)t−(k1−k2)z], where z measures the propagation distance on the circumference of the ring in counterclockwise direction. Thus, upon completing one round trip, the amplitudes a1,2 and b1,2 of the two modes are related generally by:
where the matrix elements are related to the transition amplitudes for a single round trip. With incident light only in mode 1 (i.e. A1=1, A2=0), combined equation (S1) and (S2), we have
where Det stands for determinant. Thus, the condition for complete frequency conversion (i.e. B1=0) is
r
1
−T
11
−r
1
r
2
T
22
+r
2Det[T]=0 (S4)
In the case that ring is lossless, Det[T]=1 and
where lc is the coherence length and L is circumference of the ring. Complete conversion between the two modes can be achieved when the length of the ring is chosen to be
With r1,2→1, L/lc→0. The device therefore can provide complete frequency conversion even when its length is far smaller than the coherence length.
We now consider the frequency response of the device, in the presence of loss. We consider a pair of modes ω1+Δω and ω2+Δω, so that the frequency difference between them matches the modulation frequency ω2−ω1. Using equation (3) in the paper, the coupling matrix in equation (S2) becomes
where γ1 and γ2 characterize the radiation loss. θi=(k(ωi)−k(ωi+Δω))L is round trip phase delay. In the vicinity of ω1 and ω2, we assume a parallel band configuration, thus Δk=k(ω2+Δω)−k(ω1+Δω)−q≈0 for all frequencies. C is assumed to be frequency-independent in a small range of frequency. The combination of equation (S6) and (S1) allows us to determine the response the device in general.
In order to compare to the FDTD simulations of the ring resonator, we calculate, by several independent simulations, the parameters used in above derivation. For the same ring-waveguide system without modulation, the external quality factors due to waveguide-cavity coupling are Qc1=3426 and Qc2=887 for mode 1 and 2 respectively, corresponding to r1=0.96 and r2=0.7 in equation (S1). The two modes also have a radiation quality factor of Qr1=1.9×104 and Qr2=2.3×104, corresponding to γ17.5×10−3 L−1 and γ2=9.7×10−3 L−1 in equation (S6). To compute coherent length lc, one can either do direct field integral, or derive from mode conversion rate in a numerical simulation. Here, we simulate a semicircle structure with the same modulation profile. The mode conversion rate from one end of the semicircle to the other is used to derive lc according to equation (4) in the paper. Since
and C is real because the modal profile of the waveguide can be taken to be real, this fixes the coupling constant C in equation (S6).
A Double-Waveguide Structure Design for Experimental Realization
One difficulty in implementing the inter-band transition is that the modulation profile typically requires a large wavevector, which means the period of spatial variation is very small, e.g. comparable to optical wavelength. To achieve such spatial modulation, one needs to fabricate numerous sub-micron areas that are separately modulated. This could be very challenging in experiments. To overcome this difficulty, in this supplementary we provide a practical design, where the spatial period of the modulation is significantly increased. Such a design is much more feasible given the current modulation techniques in silicon.
We use a double-waveguide structure consisting of two identical waveguides spaced by distance d (
In the above described double-waveguide structure, the band width of the two separate photonic bands are not less than about 1% of the wavelength of the light, and more preferably not less than about 2% of the wavelength of the light (e.g. 31 nm for 1.55 μm wavelength).
We now provide a specific design using the double-waveguide structure in a ring resonator scheme. The waveguide is 270 nm wide with 300 nm spacing between them (
where L is circumference of the ring. Here, the radius of the ring is chosen such that there is an even band resonant mode 1 at
and an odd band resonant mode 2 at ω2 that is 20 GHz higher in frequency, which corresponding an operation wavelength around 1.58 μm. (Such configuration can always be achieved by choosing proper ring radius and operational wavelength.) To induce a transition between these two rotating-wave resonant modes, the phase-matching condition requires a modulation profile δ cos(Ωt+ql), where l measures the distance along the ring in the counter-clockwise direction,
is the modulation frequency and
is wavevector. Note here the period of the modulation is the same as the ring circumference. In addition, for a transition between two bands of different spatial symmetries, the modulation is only applied to half of the structure, e.g. the outer waveguide of the ring. We also assume the modulation strength
corresponding Δn=0.00035, which is readily available using carrier injection/extraction modulation in silicon. To achieve this modulation profile experimentally, we propose to use three uniformly modulated areas with profile δ cos(Ωt+φi) where the phases φi are chosen to sample the continuous profile at three evenly distributed points (
To achieve nonreciprocal transmission, a single-waveguide with the same width is side-coupled to the ring (
For lights incident in the backward direction, there is no photonic transition in the ring due to the phase-mismatch. Therefore the transmission vanishes at the resonant frequencies (
Coupled Mode Theory Analysis of the Transmission in a Ring-Waveguide Coupled System.
In this section, we describe the coupled-mode model used in calculating the transmission spectral in
We analyze the modal amplitudes to the left and to the right of the waveguide-ring coupling region. The coupling between the ring and external waveguide can be described by:
where Tc is coupling matrix determined by the spacing between waveguide and ring. In the ring, modes to right of the coupling region propagate and return to the left of the coupling region. In this process, the modulation induces transitions between the following modes:
where matrix Tm describes the transition effect, φ and γ are propagation phases and loss rate. For modes at C1 and A3:
C
1L=exp(iφC1−γ)C1R A3L=exp(iφA3−γ)A3R (T4)
The incident light is written as
The transmission spectral can then be numerically solved by combing Eq. (T1-T5) and dispersion relation, which determines all the propagation phases.
A similar analysis can be performed for light incident in the backward direction. However, the modulation does not induce transition two resonant modes. The transmission is then mostly determined by the coupling between the waveguide and ring.
While the invention has been described above by reference to various embodiments, it will be understood that changes and modifications may be made without departing from the scope of the invention, which is to be defined only by the appended claims and their equivalent. All references referred to herein are incorporated by reference herein in their entireties.
This invention was made with support from the United States Government under grant number NSF (Grant No. ECS-0622212). The United States Government has rights in this invention.