This is the U.S. national phase application of International Application No. PCT/IT2008/000724, filed Nov. 24, 2008.
The present invention concerns an optical logic gate. In particular, the present invention concerns an optical logic gate of the “exclusive-OR” (EXOR) or “exclusive-NOR” (EXNOR) type.
As is known, electronic circuits that implement logical (Boolean) operations, i.e. operations involving logic states, have been available for a long time, these electronic circuits being known as logic gates. The NOT, AND, OR, XOR, NOR, NAND and XNOR operations are some of the logic operations performed by the more common logic gates.
A logic gate comprises one or more inputs able to receive respective electrical input signals, and one or more electrical outputs able to provide respective electrical output signals. Both the electrical input signals and the electrical output signals are typically digital signals, i.e. signals with electrical characteristics (voltage, for example) that can only assume two values over time, respectively indicating a first and a second logic state, in turn logically represented by bit “0” and bit “1”. Changes in the logic states correspond to rising or descending fronts of the corresponding electrical characteristics. In the following, for brevity, reference is simply made to electrical signals indicative of the logic states, implying reference to the values taken by the corresponding electrical characteristics of these electrical signals when indicative of these logic states.
Operationally, given a logic gate that implements a particular logic operation and given certain electrical input signals, or rather given certain logic states present at the electrical inputs of the logic gate, the logic gate provides one or more electrical output signals indicative of the corresponding output logic states such that the input logic states and the output logic states respect a truth table corresponding to the particular logic operation implemented by the logic gate. For example, in the particular case of an EXOR logic gate having two inputs and one output, the output logic state assumes the value “0” when the input logic states are the same (“00” or “11”) and assumes the value “1” when the input logic states are different. Vice versa, in the particular case of an EXNOR logic gate, the output logic state assumes the value “1” when the input logic states are the same (“00” or “11”), and assumes the value “0” when the input logic states are different.
At the logical level, the behaviour of a logic gate is exhaustively described by the corresponding truth table.
At the electrical level, the description of the logic gates becomes complicated, as each logic gate, which is physically embodied by means of an electronic circuit, introduces propagation delays and reacts to changes in the logic state at its inputs in a non-ideal manner. In particular, given a time instant t0 in which a rising or descending front of an electrical input signal occurs, the logic gate changes (if necessary) the logic state on its output (or outputs) with a certain delay with respect to time instant t0. In addition, the fronts of the electrical signals are never ideal, i.e. they do not provide instantaneous switching of the electrical characteristic from the first to the second value, but rather exhibit a transition period in which the electrical characteristic assumes intermediate values and in which the behaviour of the logic gate is undetermined. Lastly, electrical signals are inevitably affected by noise, with consequent performance degradation of the logic gate.
Despite the above-described drawbacks, electrical logic gates have turned out to be of decisive importance in the development of digital electronics; however, an increasing need is felt for logic gates of a different type, ideally unaffected by the drawbacks that characterize electrical logic gates, and consequently characterized, for example, by minimal switching times, absence of noise and reduced consumption.
The object of the present invention is to provide an optical logic gate that allows the above-indicated drawbacks of known art to be at least partially overcome.
According to the present invention, an optical logic gate and a method for implementing this optical logic gate are provided as respectively described in claims 1 to 15.
For a better understanding of the invention, a preferred embodiment shall now be described, purely by way of a non-limitative example and with reference to the enclosed figures, where:
a-4d show the power trends of orthogonal components of a second-harmonic optical signal against angle of inclination.
As shown in
The optical source 2 comprises a mode locked titanium-sapphire laser, tuned to a wavelength λ of 830 nm and operated to generate pulses with an amplitude of 130 fs and a repetition rate of 76 MHz for these pulses. The electromagnetic radiation thus generated is then divided by the beam splitter 3 such that the above-mentioned first and second optical pump signals si1 and si2 have substantially the same intensity.
The function of the half-wave polarizing plates 6a and 6b is to allow polarization control of the above-mentioned optical signals s1 and s2, so that they strike the second-harmonic generator element 15 with preset polarizations, in detail with preset linear polarizations. These half-wave polarizing plates 6a and 6b are made so as to avoid introducing nonlinearity.
With regard to the second-harmonic generator element 15, a section of which is schematically shown in
The second-harmonic generator layer 22 is made of single-crystal GaN, which has a wurtzite-type crystalline structure with a non-centrosymmetric hexagonal unit cell, with 6 mm point group symmetry. Furthermore, the single-crystal GaN is anisotropic and presents a second-order susceptibility tensor having elements χ113(2), χ131(2), χ223(2), χ232(2), χ311(2), χ322(2) and χ333(2) as the only non-null elements. Moreover, the relations χ311(2)=χ322(2) and χ113(2)=χ131(2)=χ223(2)=χ232(2) are valid, with a further reduction to just three non-null elements in frequency ranges for which it is possible to ignore absorption and apply the Kleinmann symmetry rules. In fact, employing the contracted notation, the non-null elements are χ31(2), χ15(2) and χ33(2); consequently, the second-order nonlinear optical tensor of the single-crystal GaN has the form:
obtained by using the main axes of the single-crystal GaN as the base and remembering the relation that binds the second-order susceptibilities {tilde over (χ)}ijk(2) to the elements of the second-order nonlinear optical tensor:
From an optical viewpoint, the second-harmonic generator layer 22 has a main optical axis h arranged perpendicularly to the second-harmonic generator layer 22, to the intermediate layer 21 and to the sapphire substrate 20, as schematically shown in
The optical source 2, beam splitter 3, reflective surfaces 5a and 5b, half-wave polarizing plates 6a and 6b, focusing lenses 7a and 7b and the second-harmonic generator element 15 are arranged such that the optical paths 4a and 4b (hence, the optical pump signals si1 and si2) are coplanar and strike the second-harmonic generator layer 22 of the second-harmonic generator element 15.
As shown in detail in
Given the inclination of the second-harmonic generator element 15 with respect to the bisector b, the optical paths 4a and 4b (hence, the optical pump signals si1 and si2) strike the incidence surface 25 forming angles of incidence with the normal n of α1 and α2, equal to α+β, and α+γ respectively. It should also be noted that the normal n is parallel to the main optical axis h.
After having struck the incidence surface 25 of the second-harmonic generator layer 22, the optical pump signals si1 and si2 are refracted and therefore propagate inside the second-harmonic generator element 15, passing through the second-harmonic generator layer 22, the intermediate layer 21 and the sapphire substrate 20 in succession.
The interaction of the optical signals si1 and si2 with the second-harmonic generator layer 22 induces a nonlinear polarization of the GaN, this polarization having harmonic components with angular frequencies of 2ωi and, by means of the second-order optical susceptibility χijk(2) (−2ω1, ωi, ωi), amplitudes proportional to the amplitudes of the optical signals si1 and si2. Furthermore, multiple reflections occur inside the second-harmonic generator element 15, with consequent amplification of the second-harmonic optical signal su3. This results in the output of the second-harmonic generator element 15 having three linearly polarized second-harmonic optical signals su1, su2 and su3 with respective angular frequencies ωu1, ωu2 and ωu3, all equal to 2ωi.
The second-harmonic optical signals su1 and su2 have respective wave vectors {right arrow over (k)}u1 and {right arrow over (k)}u2, these having directions that are respectively collinear with the directions of the wave vectors of the optical pump signals si1 and si2 in input to the second-harmonic generator element 15. Instead, the second-harmonic optical signal su3 has a wave vector {right arrow over (k)}u3 heading along the bisector b, independently of the angle of inclination α; in fact, the wave vector conservation law must be respected, and so the relation {right arrow over (k)}u1+{right arrow over (k)}u2={right arrow over (k)}u3 must hold. On account of the assumed reference system, the second-harmonic optical signal su3 is found to head along the longitudinal axis z.
As described in greater detail further on, the described interaction depends on the angles of incidence α1 and α2 and on the polarization of the optical signals involved, both pump and second-harmonic ones. In particular, it is possible to change the polarization of the second-harmonic optical signal su3 by acting on the polarization of the optical pump signals si1 and si2.
The polarizing plates 6a and 6b determine the polarizations of the optical pump signals si1 and si2 that strike the incidence surface 25 of the second-harmonic generator element 15; in particular, these polarizations are linear. In consequence, the second-harmonic optical signal su3 is also found to have linear polarization.
As they are linearly polarized, each of the above-mentioned optical signals, both pump si1 and si2 and second-harmonic su3, can be broken down into two components having mutually orthogonal linear polarizations (i.e. having mutually orthogonal directions of polarization), which are referred to in the following as the P component and the S component. In particular, and with reference to
The P or S polarization of the optical pump signals si1 and si2 incident on the second-harmonic generator element 15 is selected by acting (in a known manner) on the polarizing plates 6a and 6b, such that the following situations are alternatively provided:
That having been said, it is possible to demonstrate that the powers Wu3P and Wu3S of components Psu3 and Ssu3 of the second-harmonic optical signal su3 are given by the equation:
where A is a transverse area defined by the intersection of the optical pump signals si1 and si2 (or rather, of the corresponding Gaussian beams) with the incidence surface 25, Wi1 and Wi2 are the powers, equal in a first approximation, of the optical pump signals si1 and si21, ti1 and ti2 are the Fresnel transmission coefficients for the optical pump signals si1 and si21 at the air-second-harmonic generator layer 22 interface, T2ω
where L is the thickness of the second-harmonic generator layer 22, λ is the wavelength in a, vacuum, αr1 and αr2 are the angles of refraction of the optical pump signals si1 and si2 at the interface between the GaN and the air, which can be obtained via the Snell laws starting from the angles of incidence α1 and α2, and αr3 is the angle formed by the second-harmonic optical signal su3 with the normal n.
The effective nonlinear optical coefficient deff(α) depends on the components of the nonlinear, second-order dielectric susceptibility tensor of the GaN (via the relation
and the angle of inclination α, as well as depending on;
There are therefore eight possible values provided for the effective nonlinear optical coefficient deff(α). In detail, it is possible to demonstrate that the effective nonlinear optical coefficient deff(α) assumes the following expressions:
In the equations 5, deffppP represents the value of the effective nonlinear optical coefficient in the case of P-polarized optical pump signals si1, si2 and second-harmonic optical signal su3; deffssP represents the value of the effective nonlinear optical coefficient in the case of S-polarized optical pump signals si1, si2 and P-polarized second-harmonic optical signal su3; deffppS represents the value of the effective nonlinear optical coefficient in the case of P-polarized first optical pump signal si1 and S-polarized second optical pump signal si2 and second-harmonic optical signal su3; and deffspS represents the value of the effective nonlinear optical coefficient in the case of P-polarized second optical pump signal si2 and S-polarized first optical pump signal si1 and second-harmonic optical signal su3. Instead, the values assumed by the effective nonlinear optical coefficient in the case of optical pump signals si1 and si2 with orthogonal polarizations and P-polarized second-harmonic optical signal su3 (deffpsP,deffspP), and in the case of optical pump signals si1 and si2 with parallel polarizations and S-polarized second-harmonic optical signal su3 (deffppS,deffssS), are null.
An indicative analysis of the operation of the described optical logic gate 1 is provided in
As shown in
In detail, in the case where the optical pump signals si1 and si2 are polarized in the same manner (both type P or type S), the second-harmonic optical signal su3 is substantially P-polarized, independently of the fact that the optical pump signals si1 and si2 are P or S polarized. Vice versa, in the case where the optical pump signals si1 and si2 are polarized in a different manner, therefore the case where one of them is P-polarized and the other is S-polarized, the second-harmonic optical signal su3 is substantially S-polarized.
The polarizations of the above-mentioned optical pump signals si1 and si2 are electrical characteristics that, by construction, i.e. by opportunely acting on the polarizing plates 6a and 6b, can assume only two values over time (P or S polarization); correspondingly, the polarizations of the allows a logic operation to be implemented using optical signals, with consequent rapidity of switching, absence of consumption and the possibility of integrating the optical logic gate itself in complex optical circuits, implementing complex logic functions.
Finally, it is clear that modifications and variants can be made to the described optical logic gate without leaving the scope of the present invention, as defined by the enclosed claims.
For example, instead of GaN, it is possible to use any material that has a crystalline structure similar to that of wurtzite, with 6 mm point group symmetry, non-centrosymmetric and hexagonal unit cell, as the material of the second-harmonic generator layer 22, such as cadmium selenide (CdSe), zinc oxide (ZnO), wurtzite zinc sulphide (α-ZnS), or wurtzite silicon carbide (α-SiC). Furthermore, although its presence allows a GaN layer to be grown with less lattice imperfections, the intermediate layer 21 of AlN is optional. In place of the half-wave polarizing plates, it is possible to use other polarization control means, such as dichroic filters for example.
With regard to the optical pump signals si1 and si2, they can have mutually different angular frequencies, for example, equal to ω1 and ω2, the second-harmonic optical signal su3 consequently having an angular frequency of ω1+ω2. In this case, equations 3 and 4 are respectively generalised as follows:
where A is the previously defined transverse area, Wi1 and Wi2 are the powers of the optical pump signals si1 and si21, ti1 and ti2 are the Fresnel transmission coefficients for the optical pump signals si1 and si2 at the air-second-harmonic generator layer 22 interface, Tω
It should be noted that, in the case of optical pump signals si1 and si2 with different angular frequencies, the second-harmonic optical signal su3 is no longer collinear with the bisector b. It should also be noted that the above-mentioned optical pump signals si1 and si2 can be nonlinearly polarized.
To allow compensation of possible differences in length of the optical paths 4a and 4b, it is possible to use at least one delay line of known type, inserted in one of the optical paths 4a and 4b such that the optical pump signals si1 and si2 strike the second-harmonic generator element 15 at the same instants in time. Furthermore, it is possible to use a light source 2 of a different type from that described, for example, an optical source of the non-pulsed type or with a different wavelength.
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/IT2008/000724 | 11/24/2008 | WO | 00 | 10/14/2011 |
Publishing Document | Publishing Date | Country | Kind |
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WO2010/058432 | 5/27/2010 | WO | A |
Number | Name | Date | Kind |
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5557699 | Kester et al. | Sep 1996 | A |
20090154887 | Covey | Jun 2009 | A1 |
Entry |
---|
“All-optical transistor action by polarization rotation during type-II phase matched second harmonic generation,” by L. Lefort and A. Barthelemy, Electronics Letters vol. 31, No. 11, May 25, 1995. |
International Search Report for Application No. PCT/IT2008/000724 dated Aug. 3, 2009. |
Cao, H., et al., “Second harmonic generation in laser ablated zinc oxide thin films,” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 73, No. 5, Aug. 3, 1998, pp. 572-574. |
Larciprete, M. C., et al, “Characterization of second and third order optical nonlinearities of Zn0 sputtered films,” Applied Physics B; Lasers and Optics, Springer, Berlin, DE, vol. 82, No. 3, Mar. 1, 2006, pp. 431-437. |
Larciprete, M., et al, “Second harmonic generation in GaN/A150Ga50N films deposited by metal-organic chemical vapor deposition,” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 89, No. 13, Sep. 26, 2006. |
Passeri, D., et al., “Second harmonic generation in A1GaN, GaN and A1xGa1-xN/GaN multiple quantum well structures,” Applied Physics B (Lasers and Optics), Springer-Verlag Germany, vol. B79, No. 5, Sep. 2004, pp. 611-615. |
Biader, Ceipidor L., et al., “Logic Functions, Devices, and Circuits Based on Parmetric Nonlinear Processes,” Journal of Lightwave Technology, IEEE Service Center, New York, NY, US, vol. 26, No. 3, Feb. 1, 2008, pp. 373-378. |
Faccio, D., et al., “Noncollinear Maker's fringe measurements of second-order nonlinear optical layers,” Optics Letters Opt. Soc., America USA, vol. 25, No. 18, pagse 1376-1378. |
Number | Date | Country | |
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20120033278 A1 | Feb 2012 | US |