Optical semiconductor device provided with phase control function

Abstract

An optical semiconductor device has an optical semiconductor element; and a mounting substrate unit on which the optical semiconductor element is mounted, wherein the optical semiconductor element has an element substrate 14 and an active layer 17 formed on a lower side surface of the element substrate, the mounting substrate unit has a mounting substrate 23 and a heater electrode 8 arranged on an upper side surface of the mounting substrate. The optical semiconductor element is arranged such that the lower side surface of the element substrate 14 on which the active layer 17 is formed faces the upper side surface of the mounting substrate 23 on which the heater electrode 8 is arranged, and the active layer 17 is to be heated due to the heat-generation by the heater electrode 8. A p-electrode 10 of the mounting substrate unit and a p-electrode 19 of the optical semiconductor element are bonded to each other using a conductive fusion bonding member 20.

Description

BRIEF EXPLANATION OF THE DRAWINGS

FIG. 1 shows a schematic plan view indicative of the entire configuration of an embodiment of a optical semiconductor device provided with the phase control function according to the present invention;

FIG. 2 shows an enlarged view of a part enclosed by a dotted line in FIG. 1;

FIG. 3 shows a view indicative of the state in which an optical semiconductor element is removed in FIG. 2;

FIG. 4 shows schematic sectional view taken along A-A′ line in FIG. 2;

FIG. 5 shows schematic sectional view taken along B-B′ line in FIG. 2;

FIG. 6 shows schematic sectional view taken along C-C′ line in FIG. 2;

FIG. 7 shows a block diagram indicative of the configuration of an electric resistance value measurement means and a heat-generation/heat-absorption amount adjustment means;

FIG. 8 shows a schematic plan view indicative of the entire configuration of another embodiment of a optical semiconductor device provided with the phase control function according to the present invention;

FIG. 9 shows a schematic plan view of a wavelength-variable optical semiconductor device; and

FIG. 10 shows a schematic sectional view taken along a A-A′ line in FIG. 9.

Claims

1. An optical semiconductor device comprising: an optical semiconductor element; anda mounting substrate unit on which the optical semiconductor element is mounted,wherein the optical semiconductor element has an element substrate and an active layer formed on one side surface of the element substrate, the mounting substrate unit has a mounting substrate and a heat-generation/heat-absorption function unit arranged on one side surface of the mounting substrate, and the optical semiconductor element is arranged such that the one side surface of the element substrate on which the active layer is formed faces the one side surface of the mounting substrate on which the heat-generation/heat-absorption function unit is arranged, and the active layer is to be heated/cooled due to the heat-generation/heat-absorption by the heat-generation/heat-absorption function unit.

2. The optical semiconductor device claimed in claim 1, wherein the optical semiconductor element is bonded to the mounting substrate unit.

3. The optical semiconductor device claimed in claim 1, further comprising a spacer arranged between the optical semiconductor element and the mounting substrate unit.

4. The optical semiconductor device claimed in claim 1, wherein the heat-generation/heat-absorption function unit is formed of a metal thin film.

5. The optical semiconductor device claimed in claim 1, wherein the active layer extends along the one side surface of the element substrate, the heat-generation/heat-absorption function unit has an extension portion that extends along the one side surface of the mounting substrate, and the active layer and the extension portion of the heat-generation/heat-absorption function unit have their extension directions made parallel with each other and are arranged at positions corresponding to each other.

6. The optical semiconductor device claimed in claim 5, wherein the mounting substrate unit comprises an insulating layer formed on the heat-generation/heat-absorption function unit, and amounting substrate electrode of a first polarity formed on the insulating layer.

7. The optical semiconductor device claimed in claim 6, wherein the mounting substrate electrode of the first polarity has a portion that extends in parallel with the extension portion of the heat-generation/heat-absorption function unit.

8. The optical semiconductor device claimed in claim 7, wherein the optical semiconductor element comprises a lower cladding layer formed on the one side surface of the element substrate, the active layer being formed on the lower cladding layer, and an upper cladding layer formed on the active layer, and an element electrode of a first polarity formed on the upper cladding layer so as to extend in parallel with the active layer, and wherein the element electrode of the first polarity and the mounting substrate electrode of the first polarity are bonded to each other using a conductive bonding member.

9. The optical semiconductor device claimed in claim 1, further comprising a heat-generation/heat-absorption amount adjustment means for adjusting the heat-generation/heat-absorption amount of the heat-generation/heat-absorption function unit.

10. The optical semiconductor device claimed in claim 9, wherein the heat-generation/heat-absorption amount adjustment means is provided with an electric resistance value measurement means for measuring the electric resistance value of the heat-generation/heat-absorption function unit, and adjusts the heat-generation/heat-absorption amount of the heat-generation/heat-absorption function unit based on the electric resistance value of the heat-generation/heat-absorption function unit measured by the electric resistance value measurement means.

11. The optical semiconductor device claimed in claim 1, wherein the mounting substrate unit has an optical circuit provided with a reflection function of returning a light emitted from the optical semiconductor element to the optical semiconductor element.

12. The optical semiconductor device claimed in claim 11, wherein the optical circuit is provided with the reflection function only for a light of a selected wavelength.

13. The optical semiconductor device claimed in claim 12, wherein the mounting substrate unit is provided with a means for controlling the selected wavelength.

14. The optical semiconductor device claimed in claim 11, wherein the optical circuit is formed on the mounting substrate.

15. The optical semiconductor device claimed in claim 11, wherein the optical circuit is formed on an additional substrate different from the mounting substrate, and the additional substrate is bonded to the mounting substrate.

16. The optical semiconductor device claimed in claim 1, wherein the mounting substrate is a silicon substrate.