Optical semiconductor device

Abstract

An optical semiconductor device has a heater, an optical waveguide layer, a first electrode and a second electrode. The heater is provided on a first semiconductor region and has more than one heater segment coupled or separated to each other. The optical waveguide layer is provided in the first semiconductor region and receives heat from the heater. The first electrode is coupled to a connecting point of the heater segments adjacent to each other. The second electrodes are electrically common and are coupled to other ends of the heater segments in opposite side of the connecting point respectively.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the present invention will be described in detail with reference to the following drawings, wherein:

FIG. 1 illustrates a perspective view of a laser chip in accordance with a first embodiment of the present invention;

FIG. 2A and FIG. 2B illustrate a top view and a cross sectional view of a laser chip in accordance with a first embodiment of the present invention;

FIG. 3A and FIG. 3B illustrate a top view and a cross sectional view of a SG-DR region in accordance with a first embodiment;

FIG. 4 illustrates an enlarged top view of a SG-DR region in accordance with a second embodiment;

FIG. 5 illustrates an enlarged top view of a SG-DR region in accordance with a third embodiment;

FIG. 6 illustrates an enlarged top view of a SG-DR region in accordance with a fourth embodiment;

FIG. 7A through FIG. 7C illustrate a top view and a cross sectional view of a SG-DR region in accordance with a fifth embodiment; and

FIG. 8 illustrates an overall view of a laser module in accordance with a sixth embodiment.

Claims

1. An optical semiconductor device comprising: a heater that is provided on a first semiconductor region and has more than one heater segment coupled or separated to each other;an optical waveguide layer that is provided in the first semiconductor region and receives heat from the heater,a first electrode that is coupled to a connecting point of the heater segments adjacent to each other; andsecond electrodes that are electrically common and are coupled to other ends of the heater segments in opposite side of the connecting point respectively.

2. The optical semiconductor device as claimed in claim 1, wherein at least a part of the first electrode and at least a part of the second electrode are insulated and laminated.

3. The optical semiconductor device as claimed in claim 1 further comprising another heater segment adjacent to the heater segment having one of the second electrodes, one end of the another heater being coupled to the second electrode,the other end of the another heater being coupled to a third electrode.

4. The optical semiconductor device as claimed in claim 3, wherein an electrical potential to be applied to the third electrode is different from that to be applied to the first electrode.

5. The optical semiconductor device as claimed in claim 3, wherein an electrical potential to be applied to the third electrode is the same as that to be applied to the first electrode.

6. The optical semiconductor device as claimed in claim 1, wherein the electrodes to which a common electrical potential is to be applied are coupled to a common pad on the optical semiconductor device.

7. The optical semiconductor device as claimed in claim 3, wherein the electrodes to which a common electrical potential is to be applied are coupled to a common pad on the optical semiconductor device.

8. The optical semiconductor device as claimed in claim 1, wherein a plurality of heater groups that have the heater segment, the first electrode and one of the second electrodes are provided.

9. The optical semiconductor device as claimed in claim 8, wherein the electrodes of the heater groups to which a common electrical potential is to be applied are coupled to a common pad on the optical semiconductor device.

10. The optical semiconductor device as claimed in claim 1, wherein the optical waveguide layer receiving the heat from the heater has a plurality of optical waveguide segments having a first region that has a diffractive grating and a second region that is a space region coupled to the first region.

11. The optical semiconductor device as claimed in claim 1, wherein: a plurality of heater groups that have the heater segment, the first electrode and one of the second electrodes are provided; anda plurality of optical waveguide segments having a first region that has a diffractive grating and a second region that is a space region coupled to the first region are provided according to the heater groups.

12. The optical semiconductor device as claimed in claim 1, wherein the optical waveguide layer is optically coupled to an optical waveguide layer of a gain region having again.