Claims
- 1. A method of reforming valve metal capacitors in an implantable medical device, with each capacitor having a rated voltage or a maximum-energy voltage, the method comprising:
energizing the valve metal capacitor to a desired energy level and immediately disconnecting the valve metal capacitor from the energizing source and any external load so the energy in the valve metal capacitor is dissipated due to self-discharge.
- 2. The method of claim 1 wherein the desired energy level is the rated voltage.
- 3. The method of claim 1 wherein the desired energy level is below the rated voltage.
- 4. The method of claim 1 wherein the desired energy level is above the rated voltage.
- 5. The method of claim 1 wherein the desired energy level is a predetermined coulomb value.
- 6. The method of claim 1 wherein the energizing of the valve metal capacitor has a reform energizing current at least greater than the leakage current of the valve metal capacitor.
- 7. The method of claim 6 of further selecting the energizing current of optimum value to obtain a desired energy efficiency of the valve metal capacitor and/or a desired charge time of the valve metal capacitor.
- 8. The method of claim 1 wherein the valve metal capacitor is never maintained at any voltage.
- 9. The method of claim 8 wherein by not maintaining any voltage during the method of reforming the valve metal capacitor, the valve metal capacitor obtains maximum energy efficiency and the method of reforming valve metal capacitor saves energy.
- 10. The method of claim 1 wherein the valve metal is selected from the group consisting of tantalum, niobium, titanium, zirconium, hafnium and vanadium.
- 11. A method of reforming valve metal capacitors in an implantable medical device, with each valve metal capacitor having a rated voltage or a maximum-energy voltage, the method comprising:
energizing the valve metal capacitor to a desired energy level and immediately connecting the valve metal capacitor to a non-therapeutic load.
- 12. The method of claim 11 wherein the desired energy level is the rated voltage.
- 13. The method of claim 11 wherein the desired energy level is below the rated voltage.
- 14. The method of claim 11 wherein the desired energy level is above the rated voltage.
- 15. The method of claim 11 wherein the desired energy level is a predetermined coulomb value.
- 16. The method of claim 11 wherein the energizing of the valve metal capacitor has a reform energizing current at least greater than the leakage current of the valve metal capacitor.
- 17. The method of claim 16 of further selecting the energizing current of optimum value to obtain a desired energy efficiency of the valve metal capacitor and/or a desired charge time of the valve metal capacitor.
- 18. The method of claim 11 wherein the valve metal capacitor is never maintained at any voltage.
- 19. The method of claim 18 wherein by not maintaining any voltage during the method of reforming the valve metal capacitor, the valve metal capacitor obtains maximum energy efficiency and the method of reforming valve metal capacitor saves energy.
- 20. The method of claim 11 wherein the valve metal is selected from the group consisting of tantalum, niobium, titanium, zirconium, hafnium and vanadium.
- 21. The method of claim 11 wherein the non-therapeutic load is any active or passive component, or combinations thereof, that will discharge or de-energize the valve metal capacitor.
- 22. A reform protocol to maintain one or more device performance parameters above certain values, and/or below certain values, and/or within certain ranges of values while optimizing battery consumption comprising:
energizing a valve metal capacitor to a desired energy level and immediately disconnecting the capacitor from the energizing source and any external load so the energy in the valve metal capacitor is dissipated due to self-discharge or immediately connecting the valve metal capacitor to a non-therapeutic load.
- 23. The method of claim 22 wherein the desired energy level is the rated voltage.
- 24. The method of claim 22 wherein the desired energy level is below the rated voltage.
- 25. The method of claim 22 wherein the desired energy level is above the rated voltage.
- 26. The method of claim 22 wherein the desired energy level is a predetermined coulomb value.
- 27. The method of claim 22 wherein the energizing of the valve metal capacitor has a reform energizing current at least greater than the leakage current of the valve metal capacitor.
- 28. The method of claim 27 further selecting the reform energizing current of optimal value to obtain a desired energy efficiency of the valve metal capacitor and/or a desired charge time of the valve metal capacitor.
- 29. The method of claim 22 wherein the valve metal capacitor is never maintained at any voltage.
- 30. The method of claim 29 wherein by not maintaining any voltage during the method of reforming the valve metal capacitor, the valve metal capacitor obtains maximum energy efficiency and the method of reforming valve metal capacitor saves energy.
- 31. The method of claim 22 wherein the valve metal is selected from the group consisting of tantalum, niobium, titanium, zirconium, hafnium and vanadium.
- 32. The method of claim 22 wherein the non-therapeutic load is any active or passive component, or combination thereof, that will discharge or de-energize the valve metal capacitor.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to U.S. provisional patent application serial No. 60/345,190, filed on Nov. 7, 2001.
Provisional Applications (1)
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Number |
Date |
Country |
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60345190 |
Nov 2001 |
US |