This application is based upon and claims the benefit of priority from Japanese Patent Application Nos. 2012-10200, 2011-52490, and 2011-147479, filed on Jan. 20, 2012, Mar. 10, 2011, and Jul. 1, 2011, respectively, the entire contents of which are incorporated herein by reference.
The present disclosure relates to an organic EL device and, more particularly, to an organic EL device capable of simultaneously optimizing the internal quantum efficiency and light extraction efficiency.
In recent years, a display unit or a lighting unit using an organic EL (Electroluminescence) device (hereinafter, the term “organic EL Device” is also used interchangeably to refer to an “OLED (Organic Light Emitting Diode)”) as an organic light-emitting device has been developed for practical applications. In general, an organic EL device is manufactured by laminating, one above the next, a transparent electrode as an anode, an organic layer, and a metal electrode as a cathode on a transparent support substrate such as a glass substrate or a transparent plastic film.
Electrons supplied from the cathode and positive holes supplied from the anode are recombined within the organic layer as a voltage is applied between the transparent electrode and the metal electrode. As a result, excitons are generated and EL light is emitted when the excitons thus generated make a transition from an excited state to a ground state. The EL light is transmitted through the transparent substrate and is emitted from the transparent support substrate to the outside.
However, the organic EL device described above suffers from a problem in that the light generated in the organic layer cannot be sufficiently extracted to the outside.
The present disclosure provides some embodiments of an organic EL device capable of simultaneously optimizing the internal quantum efficiency and light extraction efficiency.
According to one aspect of the present disclosure, there is provided an organic EL device. The organic EL device includes a substrate, a first electrode layer arranged on the substrate, an organic EL layer arranged on the first electrode layer, an optical property adjusting layer arranged on the organic EL layer, and a second electrode layer arranged on the optical property adjusting layer.
According to another aspect of the present disclosure, there is provided an organic EL device. The organic EL device includes a substrate, a first electrode layer arranged on the substrate, an optical property adjusting layer arranged on the first electrode layer, an organic EL layer arranged on the optical property adjusting layer, and a second electrode layer arranged on the organic EL layer.
According to a yet another aspect of the present disclosure, there is provided an organic EL device. The organic EL device includes a substrate, a first electrode layer arranged on the substrate, an organic EL layer arranged on the first electrode layer, a second electrode layer arranged on the organic EL layer, and a high-refractive-index scattering layer arranged on the second electrode layer.
Reference will be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention(s). However, it will be apparent to one of ordinary skill in the art that the present invention(s) may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as to not unnecessarily obscure aspects of the various embodiments.
The first through seventh embodiments of the present disclosure will now be described in detail with reference to the drawings. Throughout the drawings, identical or similar parts will be designated by identical or similar reference symbols. The drawings are schematic. It should be appreciated that the relationship between a thickness and a plane dimension and the ratios of thicknesses of individual layers differ from the actual ones. Accordingly, specific thicknesses and dimensions should be determined in light of the following description. It goes without saying that certain portions in the drawings differ in their relationship and ratio of dimensions from one another.
The first through seventh embodiments described below illustrate devices and methods embodying the technical concept of the present disclosure by way of example. These embodiments are not intended to limit the materials, shapes, structures and arrangements of individual components to the ones set forth below. These embodiments may be modified or changed in many different forms without departing from the scope of the present disclosure defined in the claims.
(Organic EL Device) A schematic cross-sectional structure of an organic EL device according to a first embodiment is shown in
Referring to
On the other hand, as shown in
In general, light emission efficiency is represented by the multiplication of the carrier injection balance by the exciton generation efficiency, radiation recombination probability of excitons, and light extraction efficiency. That is, light emission efficiency is represented by an equation: [light emission efficiency]=[carrier injection balance]×[exciton generation efficiency]×[radiation recombination probability of excitons]×[light extraction efficiency].
The carrier injection balance denotes the probability with which, as shown in
The excitons generation efficiency denotes the probability or likelihood of the excitons being effectively generated in the light emitting layer 16. If the excitons are effectively generated in the light emitting layer 16 but fail to be recombined, then there will be light emission loss.
The carrier injection balance and exciton generation efficiency are decided by the electric properties, such as the electron mobility and hole mobility, within the respective layers of the organic EL layer, and the layer thickness.
The radiation recombination probability of excitons is a value that depends on the material used.
The light extraction efficiency denotes the probability with which, as shown in
The light extraction efficiency is decided by the optical properties, such as the refractive index, within the respective layers of the organic EL layer, and the layer thickness.
A schematic cross-sectional structure for explaining an operation principle of carrier injection balance in the organic EL device 2 according to the first embodiment is shown in
As shown in
As shown in
In the manner described above, the internal quantum efficiency and the light extraction efficiency may be independently adjusted in the organic EL device 2 according to the first embodiment. It is therefore possible to readily maximize the final external quantum efficiency.
As described above, the organic EL device 2 according to the first embodiment includes the property separation layer 22 and the optical property adjusting layer 24. The optical properties may be independently adjusted by adjusting the properties and thickness of the optical property adjusting layer 24 while keeping constant the carrier injection balance and exciton generation efficiency within the organic EL layer 30 arranged below the property separation layer 22. Thus, it becomes easier to maximize the final external quantum efficiency.
A method for selecting electrode terminals of the organic EL device 2 according to the first embodiment will now be explained with reference to the following figures. As shown in
The substrate 10 is a transparent substrate that allows light to pass therethrough. The substrate 10 may be formed of, e.g., a glass substrate or a plastic film with a gas barrier layer. The substrate 10 may have a thickness of, e.g., about 0.1 to 1.1 mm. In addition, the substrate 10 may be made flexible by forming the substrate 10 through the use of a transparent resin such as polycarbonate or polyethylene terephthalate (PET).
The first electrode layer 12 may be formed of an ITO (Indium Tin Oxide)-made transparent electrode having a thickness of, e.g., about 50 nm to 500 nm. Alternatively, the first electrode layer 12 may be made of IZO (Indium Zinc Oxide), ATO (Antimony Tin Oxide) or PEDOTT-PSS. Moreover, the first electrode layer 12 may be a translucent electrode formed of a thin film of metal such as Ag.
The organic EL layer 30 includes, e.g., a hole transport layer 14, a light emitting layer 16, and an electron transport layer 18, which are laminated one above another when viewed from the side of the substrate 10.
The hole transport layer 14 is a layer for smoothly transporting the positive holes injected from the first electrode layer 12 to the light emitting layer 16. The hole transport layer 14 may be made of, e.g., 4,4′-bis[N-(1-naphtyl-1-)N-phenyl-amino]-biphenyl.
The light emitting layer 16 is a layer for emitting light by recombining the injected positive holes and electrons. The light emitting layer 16 may be made of, e.g., aluminum (8-hydroxy) quinolinate doped with a dopant such as rubrene or a complex containing transition metal atoms.
The electron transport layer 18 is a layer for smoothly transporting the electrons injected from the second electrode layer 20 to the light emitting layer 16. The electron transport layer 18 may be made of, e.g., aluminum (8-hydroxy)quinolinate.
The organic EL layer 30 may further include layers other than the hole transport layer 14 and electron transport layer 18, e.g., a hole injection layer and an electron injection layer.
The optical property adjusting layer 24 may be made of an organic material transparent in the visible light region, which is the same as the material used in making the electron transport layer 18 or the hole transport layer 14. In other words, the optical property adjusting layer 24 may be formed of an electron-transporting-material layer or a hole-transporting-material layer.
The optical property adjusting layer 24 may have a refractive index equal to or greater than the refractive index of the organic EL layer 30. An inorganic compound such as SiO2 or SiN may be contained in the optical property adjusting layer 24. A metallic compound such as ZnS, ZnO, TiO2, ITO, IZO or ALO may be alternatively contained in the optical property adjusting layer 24.
The property separation layer 22 may be formed of an electric charge generation layer or a transparent electrode layer. In this regard, it is possible to use, e.g., HAT-CN, as the electric charge generation layer. As a transparent electrode layer, it is possible to use, e.g., a translucent conductive thin film layer made of a metal oxide such as ITO or IZO, or a metal such as Al, Ag, Cs, Li, Ca, Mg, or Zn.
The optical property adjusting layer 24 may contain a hole-transporting-material layer or an electron-transporting-material layer.
The property separation layer 22 may be formed of an electric charge generation layer, a transparent electrode layer, or a conductive thin film layer.
The optical property adjusting layer 24 may be transparent in the visible light region and have a light scattering property.
If a hole-transporting-material layer is used as the optical property adjusting layer 24, the property separation layer 22 may be an electric charge generation layer.
Alternatively, if an electron-transporting-material layer is used as the optical property adjusting layer 24, the property separation layer 22 may be a transparent electrode layer or a conductive thin film layer.
In the organic EL device 2 according to the first embodiment, the optical property adjusting layer 24 may be doped with a metal. As the doped metal, it is possible to use, e.g., Al, Ag, Mg, Ca, Li, Cs, Ni, Pd, Pt, Zn, or Au.
In the organic EL device 2 according to the first embodiment, the optical property adjusting layer 24 may also be doped with a material capable of forming a charge-transfer complex. As the charge-transfer complex, it is possible to use, e.g., a tetrathiafulvalene-tetracy anoquinodimethane (TTF-TCNQ) complex.
In the case where the property separation layer 22 is formed of an electric charge generation layer, the electric charge generation layer has a thickness of, e.g., about 0.1 nm to 100 nm The LUMO (Lowest Unoccupied Molecular Orbital) of the electric charge generation layer may be equal to or greater than 4.0 eV as an absolute value.
In addition, the HOMO (Highest Occupied Molecular Orbital) of the optical property adjusting layer 24 may be equal to or less than 6.0 eV as an absolute value.
Further, the energy level difference between the HOMO of the optical property adjusting layer 24 and the LUMO of the electric charge generation layer may be equal to or less than 1 eV.
The second electrode layer 20 may be formed of, e.g., a metal film having high reflectance, such as an Al film or an Ag film. In the case of a top and bottom emission configuration, to be described later, the second electrode layer 20 is formed of the same transparent electrode layer as the first electrode layer 12.
As shown in
Alternatively, the organic EL device 2 according to the first embodiment may have a top emission and bottom emission configuration in which the substrate 10 is formed of a transparent substrate and the first electrode layer 12 and second electrode layer 20 are formed of a transparent electrode layer.
In addition, the organic EL device 2 according to the first embodiment may have a top emission configuration. In this configuration, the substrate 10, the first electrode layer 12, and the second electrode layer 20 are formed of an opaque substrate, a metal layer, and a transparent electrode layer, respectively. In this case, the substrate 10 may be formed of, e.g., a silicon substrate or a stainless steel substrate. The first electrode layer 12 may be formed of, e.g., an aluminum deposition film. The second electrode layer 20 may be formed of, e.g., ITO.
In the organic EL device 2 according to the first embodiment, the bulk refractive index of the material forming the optical property adjusting layer 24 in at least a portion of the wavelength region of 380 nm to 780 nm may be set to be greater than the refractive index of one of the substrate 10, the organic EL layer 30, the first electrode layer 12, or the second electrode layer 20. This configuration may also apply to the organic EL devices 2 according to the second through twenty-seventh embodiments, to be described later.
The organic EL device 2 according to the first embodiment includes the property separation layer 22, which makes it possible to keep constant the carrier injection balance and exciton generation efficiency within the organic EL layer 30 arranged below the property separation layer 22. In other words, the carrier injection balance and exciton generation efficiency may be optimized by adjusting the thickness of the respective layers within the organic EL layer 30 arranged below the property separation layer 22. As a result, it is possible to maximize the internal quantum efficiency.
The organic EL device 2 according to the first embodiment includes the optical property adjusting layer 24. By adjusting the properties and thickness of the optical property adjusting layer 24, it is possible to adjust the optical properties thereof and to enhance the light extraction efficiency. In other words, the optical interference may be optimized by adjusting the thickness of the optical property adjusting layer 24. As a result, it is possible to maximize the light extraction efficiency.
Thus, the internal quantum efficiency and the light extraction efficiency may be independently adjusted in the organic EL device 2 according to the first embodiment. It is therefore possible to readily maximize the final external quantum efficiency.
The organic EL device 2 according to the first embodiment includes the property separation layer 22 and the optical property adjusting layer 24. The optical properties may be independently adjusted by adjusting the properties and thickness of the optical property adjusting layer 24 while keeping constant the carrier injection balance and exciton generation efficiency within the organic EL layer 30 arranged below the property separation layer 22. Thus, it becomes easier to maximize the final external quantum efficiency.
With the first embodiment, it is possible to provide an organic EL device capable of simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
Referring to
With the second embodiment, the light usually confined within the organic EL layer 30 due to the total reflection may be extracted to the outside of the substrate through scattering in the polycrystalline organic material layer 26. It is therefore possible to further enhance the light extraction efficiency.
With the second embodiment, the light scattering property may be enhanced by employing the polycrystalline organic material layer 26. It is therefore possible to provide an organic EL device capable of simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
In the schematic cross-sectional structure of an organic EL device 2 according to a third embodiment shown in
In the schematic cross-sectional structure of an organic EL device 2 according to a modified example of the third embodiment shown in
With the modified example of the third embodiment, the short-circuit of the second electrode layer 20 and the property separation layer 22 makes it possible to directly inject carriers into the property separation layer 22 with no involvement of the optical property adjusting layer 24 when the carriers are injected from the side of the second electrode layer 20. It is therefore possible to suppress the drive voltage to remain low.
The formation conditions of the optical property adjusting layer 24 may be adjusted by using a poly-crystallizing material as the optical property adjusting layer 24. This makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
With the third embodiment and the modified example thereof, the uneven surface on which patterns are arranged randomly is formed in the interface between the optical property adjusting layer 24 and the second electrode layer 20. This makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
A schematic cross-sectional structure of an organic EL device 2 according to a fourth embodiment is shown in
In the organic EL device 2 according to the fourth embodiment shown in
The step-height of the optical property adjusting layer 24 shown in
The pattern structures of the optical property adjusting layer 24 shown in
In an organic EL device 2 according to a first modified example of the fourth embodiment shown in
As shown in
With the fourth embodiment and the first through fourth modified examples thereof, the uneven surface on which patterns are arranged regularly is formed in the interface between the optical property adjusting layer 24 and the second electrode layer 20. This makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
Referring to
With the fifth embodiment, the use of the patterned polycrystalline organic material layer 26 makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
Referring to
While
With the sixth embodiment, the interface between the optical property adjusting layer 24 and the second electrode layer 20 has an uneven surface. It is therefore possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
Referring to
In the organic EL device 2 according to the seventh embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
In the organic EL device 2 according to the eighth embodiment, the optical property adjusting layer is formed of the polycrystalline organic material layer 26a and has a thickness substantially equal to or less than a grain size. This makes it possible to reduce the scattering effect with respect to the light moving toward the front side (the conventional outgoing light) and increase the scattering effect with respect to the light propagating substantially horizontally (in a thin film mode). In order to reduce the drive voltage, the thickness of the polycrystalline organic material layer 26a may be, e.g., 200 nm or less.
In the organic EL device 2 according to the eighth embodiment, the polycrystalline organic material layer 26a may be doped with a metal. As the doped metal, it is possible to use, e.g., Al, Ag, Mg, Ca, Li, Cs, Ni, Pd, Pt, Zn, or Au.
In the organic EL device 2 according to the eighth embodiment, the polycrystalline organic material layer 26a may also be doped with a material capable of forming a charge-transfer complex. As the charge-transfer complex, it is possible to use, e.g., a tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) complex.
In the organic EL device 2 according to the eighth embodiment, it is possible to reduce the drive voltage because the polycrystalline organic material layer 26a is doped with a metal or a material capable of forming a charge-transfer complex.
Referring to
In the organic EL device 2 according to the ninth embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
More specifically, as shown in
It is highly likely that the thin film mode light propagating through a thin film layer such as the optical property adjusting layer 24 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the tenth embodiment, the optical property adjusting layer 24 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. This makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
In the organic EL device 2 according to the tenth embodiment, major electrodes may be selected from the second electrode layer 20 and the property separation layer 22. Alternatively, major electrodes may be selected from the second electrode layer 20 and the property separation layer 22 short-circuited to the first electrode layer 12. This electrode selection method may apply to the organic EL devices 2 according to the eleventh through twenty-seventh embodiments, to be described below.
Referring to
In the organic EL device 2 according to the eleventh embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
More specifically, as shown in
It is highly likely that the thin film mode light propagating through a thin film layer such as the polycrystalline organic material layer 26 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the twelfth embodiment, the polycrystalline organic material layer 26 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. This makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Referring to
In the organic EL device 2 according to the thirteenth embodiment, the optical property adjusting layer is formed of the polycrystalline organic material layer 26a and has a thickness substantially equal to or less than a grain size. This makes it possible to reduce the scattering effect with respect to the light moving toward the front side (the conventional outgoing light) and increase the scattering effect with respect to the light propagating substantially horizontally (in a thin film mode). In order to reduce the drive voltage, the thickness of the polycrystalline organic material layer 26a may be, e.g., 200 nm or less.
In the organic EL device 2 according to the thirteenth embodiment, the polycrystalline organic material layer 26a may be doped with a metal. As the doped metal, it is possible to use, e.g., Al, Ag, Mg, Ca, Li, Cs, Ni, Pd, Pt, Zn, or Au.
In the organic EL device 2 according to the thirteenth embodiment, the polycrystalline organic material layer 26a may also be doped with a material capable of forming a charge-transfer complex. As the charge-transfer complex, it is possible to use, e.g., a tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) complex.
In the organic EL device 2 according to the thirteenth embodiment, it is possible to further reduce the drive voltage because the polycrystalline organic material layer 26a is doped with a metal or a material capable of forming a charge-transfer complex.
In the organic EL device 2 according to the thirteenth embodiment, the polycrystalline organic material layer 26a functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO etc. Thus, this makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Referring to
More specifically, as shown in
In the schematic cross-sectional structure of the organic EL device 2 according to the fourteenth embodiment, as shown in
Although not shown in
The formation conditions of the optical property adjusting layer 24 may be adjusted by using a poly-crystallizing material as the optical property adjusting layer 24. Thus, this makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
With the fourteenth embodiment, the uneven surface on which patterns are arranged randomly is formed in the interface between the optical property adjusting layer 24 and the property separation layer 20. This makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
It is highly likely that the thin film mode light propagating through a thin film layer such as the optical property adjusting layer 24 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the fourteenth embodiment, the optical property adjusting layer 24 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. This makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Referring to
In the organic EL device 2 according to the fifteenth embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
In the organic EL device 2 according to the sixteenth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
In the organic EL device 2 according to the seventeenth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
As shown in
The formation conditions of the optical property adjusting layer 24 may be adjusted by using a poly-crystallizing material as the optical property adjusting layer 24. Thus, this makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
With the eighteenth embodiment, the uneven surface on which patterns are arranged randomly is formed in the interface between the optical property adjusting layer 24 and the second electrode layer 20. Thus, this makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
In the organic EL device 2 according to the eighteenth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
As shown in
In the organic EL device 2 according to the nineteenth embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
In the organic EL device 2 according to the nineteenth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
As shown in
In the organic EL device 2 according to the twentieth embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Further, in the organic EL device 2 according to the twentieth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
In the schematic cross-sectional structure of the organic EL device 2 according to the twentieth embodiment, as shown in
The formation conditions of the optical property adjusting layer 24a may be adjusted by using a poly-crystallizing material as the optical property adjusting layer 24a. Thus, this makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
With the twentieth embodiment, the uneven surface on which patterns are arranged randomly is formed in the interface between the optical property adjusting layer and the second electrode layer 20. This makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
Referring to
As shown in
Further, as shown in
In the organic EL device 2 according to the twenty-first embodiment, the optical property adjusting layer is formed of the polycrystalline organic material layer 26a and has a thickness substantially equal to or less than a grain size. Thus, this makes it possible to reduce the scattering effect with respect to the light moving toward the front side (the conventional outgoing light) and to increase the scattering effect with respect to the light propagating substantially horizontally (in a thin film mode). In order to reduce the drive voltage, the thickness of the polycrystalline organic material layer 26a may be, e.g., 200 nm or less.
In the organic EL device 2 according to the twenty-first embodiment, the polycrystalline organic material layer 26a may be doped with a metal. As the doped metal, it is possible to use, e.g., Ni, Pd, Pt, Zn, or Au.
In the organic EL device 2 according to the twenty-first embodiment, the polycrystalline organic material layer 26a may also be doped with a material capable of forming a charge-transfer complex. As the charge-transfer complex, it is possible to use, e.g., a tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) complex.
In the organic EL device 2 according to the twenty-first embodiment, it is possible to further reduce the drive voltage because the polycrystalline organic material layer 26a is doped with a metal or a material capable of forming a charge-transfer complex.
Referring to
More specifically, as shown in
It is highly likely that the thin film mode light propagating through a thin film layer such as the optical property adjusting layer 24 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the twenty-second embodiment, the optical property adjusting layer 24 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. This makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency. Further, in the organic EL device 2 according to the twenty-second embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
In the organic EL device 2 according to the twenty-third embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
More specifically, as shown in
It is highly likely that the thin film mode light propagating through a thin film layer such as the polycrystalline organic material layer 26 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the twenty-fourth embodiment, the polycrystalline organic material layer 26 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. Thus, this makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Further, in the organic EL device 2 according to the twenty-fourth embodiment, it is possible to reduce the drive voltage and material cost by omitting the property separation layer 22.
Referring to
As shown in
In the organic EL device 2 according to the twenty-fifth embodiment, the optical property adjusting layer is formed of the polycrystalline organic material layer 26a and has a thickness substantially equal to or less than a grain size. This makes it possible to reduce the scattering effect with respect to the light moving toward the front side (the conventional outgoing light) and to increase the scattering effect with respect to the light propagating substantially horizontally (in a thin film mode). In order to reduce the drive voltage, the thickness of the polycrystalline organic material layer 26a may be, e.g., 200 nm or less.
In addition, in the organic EL device 2 according to the twenty-fifth embodiment, the polycrystalline organic material layer 26a may be doped with a metal. As the doped metal, it is possible to use, e.g., Ni, Pd, Pt, Zn, or Au.
In the organic EL device 2 according to the twenty-fifth embodiment, the polycrystalline organic material layer 26a may also be doped with a material capable of forming a charge-transfer complex. As the charge-transfer complex, it is possible to use, e.g., a tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) complex.
In the organic EL device 2 according to the twenty-fifth embodiment, it is possible to further reduce the drive voltage because the polycrystalline organic material layer 26a is doped with a metal or a material capable of forming a charge-transfer complex.
Further, in the organic EL device 2 according to the twenty-fifth embodiment, the polycrystalline organic material layer 26a functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. This makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Referring to
More specifically, as shown in
In the schematic cross-sectional structure of the organic EL device 2 according to the twenty-sixth embodiment, as shown in
While not shown in
The formation conditions of the optical property adjusting layer 24 may be adjusted by using a poly-crystallizing material as the optical property adjusting layer 24. Thus, this makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
With the twenty-sixth embodiment, the uneven surface on which patterns are arranged randomly is formed in the interface between the optical property adjusting layer and the hole transport layer. Thus, this makes it possible to provide an organic EL device capable of enhancing a light scattering property and simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
It is highly likely that the thin film mode light propagating through a thin film layer such as the optical property adjusting layer 24 exists largely within and around the first electrode layer 12 made of ITO, etc., and has a high refractive index.
In the organic EL device 2 according to the twenty-sixth embodiment, the optical property adjusting layer 24 functioning as a scattering layer is arranged adjacent to the first electrode layer 12 made of ITO, etc. Thus, this makes it possible to more easily extract the light to the outside and to enhance the light extraction efficiency.
Referring to
In the organic EL device 2 according to the twenty-seventh embodiment, the drive voltage may be reduced by thinning the optical property adjusting layer 24a.
Referring to
More specifically, as shown in
The organic EL layer 30 includes, e.g., a hole transport layer 14, a light emitting layer 16, and an electron transport layer 18, which are laminated one above another when viewed from the side of the substrate 10. The laminating order of the respective layers of the organic EL layer 30 may be suitably changed. Further, it may be possible to use a mixed layer.
The transparent electrode 32 may be formed of a semiconductor oxide such as ITO or IZO, or a thin translucent film made of a metal such as a Mg—Ag alloy or Al. In addition, the transparent electrode 32 may be formed of a material other than those mentioned above as long as the material is transparent and electrically conductive.
The high-refractive-index scattering layer 34 may be formed of an organic material layer or a polycrystalline organic material layer which is transparent in the visible light region.
More specifically, the high-refractive-index scattering layer 34 may be made of 1,4-di(1,10-phenanthroline-2-yl) benzene (DPB), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,5-bis(4-biphenylyl) thiophene (BP1T), p-quaterphenyl(p-4P), and naphthalene-1,4,5,8-tetracarboxylic dianhydride (NTDA), the chemical structural formulae of which are shown in
The thickness of the high-refractive-index scattering layer 34 may be about 10 nm to 10 μm (more specifically, about 10 nm to 1 μm). In particular, the thickness of the high-refractive-index scattering layer 34 may be 200 nm or less.
As shown in
Further, in the schematic cross-sectional structure of an organic EL device 2 according to a first modified example of the twenty-eighth embodiment, as shown in
The formation conditions of the high-refractive-index scattering layer 34 may be adjusted by using a poly-crystallizing material as the high-refractive-index scattering layer 34. Thus, this makes it possible to increase the roughness Ra of the uneven surface on which patterns are arranged randomly.
In the schematic cross-sectional structure of an organic EL device 2 according to a second modified example of the twenty-eighth embodiment, as shown in
The high-refractive-index scattering layer 34 having grain boundaries may be formed of a polycrystalline organic material layer. The thickness of the polycrystalline organic material layer may be substantially equal to or less than a grain size.
Other configurations remain the same as those of the twenty-eighth embodiment, and no repeated description will be made on the same configurations.
In the organic EL devices 2 according to the twenty-eighth embodiment and the first and second modified examples thereof, the bulk refractive index of the material forming the high-refractive-index scattering layer 34 or 34a in at least a portion of the wavelength region of 380 nm to 780 nm may be set greater than the refractive index of one of the substrate 10, the organic EL layer 30, the first electrode layer 12, and the second electrode layer (transparent electrode) 32. This configuration may also apply to the organic EL devices 2 according to the twenty-ninth through thirty-fifth embodiments to be described later.
Further, in the organic EL devices 2 according to the twenty-eighth embodiment and the first and second modified examples thereof, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34 or 34a.
With the organic EL devices 2 according to the twenty-eighth embodiment and the first and second modified examples thereof, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 or 34a makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
A schematic cross-sectional structure of an organic EL device 2 according to a twenty-ninth embodiment is shown in
As shown in
The pattern structure is one of a circular pattern, square pattern, circular pattern forming a triangle, and rectangular pattern. Other configurations remain the same as those of the twenty-eighth embodiment, and no repeated description will be made on the same configurations.
The level difference of the high-refractive-index scattering layer 34 is about 10 nm to 10 μm (more specifically, about 100 nm to 1 μm).
The pattern structures of the high-refractive-index scattering layer 34 shown in
In an organic EL device 2 according to a first modified example of the twenty-ninth embodiment, as shown in
Further, in an organic EL device 2 according to a third modified example of the twenty-ninth embodiment, as shown in
Each of the organic EL devices 2 according to the first through fourth modified examples includes the high-refractive-index scattering layer 34 having a predetermined regular cross-sectional structure, which makes it possible to enhance a light scattering property. Other configurations remain the same as those of the twenty-ninth embodiment, and no repeated description will be made on the same configurations.
In the organic EL devices 2 according to the twenty-ninth embodiment and the first through fourth modified examples thereof, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34.
With the organic EL devices 2 according to the twenty-ninth embodiment and the first through fourth modified examples thereof, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 having an uneven surface on which patterns are arranged regularly makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
Referring to
As the polycrystalline organic material, it is possible to use, DPB, PBD, BP1T, p-4P, and NTDA, the chemical structural formulae of which are shown in
In the organic EL device 2 according to the thirtieth embodiment, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34.
With the organic EL device 2 according to the thirtieth embodiment, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 formed of a polycrystalline material makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. Thus, this makes it possible to greatly enhance the light extraction efficiency.
Referring to
In the organic EL device 2 according to the thirty-first embodiment, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34.
With the organic EL device 2 according to the thirty-first embodiment, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 having a wavy structure makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
Referring to
The metal electrode layer 38 may be made of, e.g., Ag, Al, etc.
Further, the thickness of the metal electrode layer 38 may be set such that light does not substantially pass through the metal electrode layer 38.
As shown in
With the organic EL device 2 according to the thirty-second embodiment, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
Further, with the organic EL device 2 according to the thirty-second embodiment, it is possible to increase an aperture ratio by employing the top emission configuration in which the light emitted from the light emitting layer 16 is reflected by surface of the metal electrode layer 38.
Referring to
Examples of the high reflectance metal include Ag, Al, Mo, and Ta.
As shown in
With the organic EL device 2 according to the thirty-third embodiment, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
Referring to
The protective layer 42 is formed of a thin film made of, e.g., an inorganic material such as SiO2 or SiN, or a predetermined organic material.
In the organic EL device 2 according to the thirty-fourth embodiment, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34.
With the organic EL device 2 according to the thirty-fourth embodiment, it is possible to reduce or remove a surface plasmon loss by using the transparent electrode 32.
The provision of the high-refractive-index scattering layer 34 makes it possible to convert a thin film mode to a substrate mode or an external mode.
Accordingly, it is possible to extract the light with the quantity corresponding to the surface plasmon loss, which is higher in proportion than other losses, and the thin film wave guide mode loss. This makes it possible to greatly enhance the light extraction efficiency.
Further, by arranging the protective layer 42 on the high-refractive-index scattering layer 34, it is possible to avoid a situation where the high-refractive-index scattering layer 34 and the organic EL layer 30 are damaged when the organic EL layer 30, the transparent electrode 32, and the high-refractive-index scattering layer 34 are sealed with a resin, as in the thirty-fifth embodiment to be described below.
Referring to
The sealing portion 46 may be made of a UV-curable resin, glass frit, etc.
The sealing plate 48 may be formed of a polymer resin substrate, glass substrate, etc.
The filler 44 may be formed of a solid or liquid resin, glass, oil, e.g., fluorine-based inert oil, or gel, or a rare gas such as a nitrogen gas, etc. The filler 44 may be transparent or cloudy.
In the organic EL device 2 according to the thirty-fifth embodiment, the light (hν) is emitted from both the surface of the substrate 10 and the surface of the high-refractive-index scattering layer 34.
In the organic EL device 2 according to the thirty-fifth embodiment, at least one of the sealing plate 48 and the substrate 10 may have an uneven surface on which patterns are arranged randomly or regularly.
Referring to
Referring to
Referring to
As shown in
With the thirty-fifth embodiment and the first through third modified examples thereof, it is possible to enhance the durability of the organic EL device 2 because the organic EL layer 30, the transparent electrode 32, and the high-refractive-index scattering layer 34 are sealed and the filler 44 fills the space.
With the first through third modified examples of the thirty-fifth embodiment, the provision of the light extraction films 50a and 50b makes it possible to have the light (hν) efficiently emitted from the sealing plate 48 or the sealing plate 48 and the substrate 10.
In the thirty-fifth embodiment and the first through third modified examples thereof, it may be possible to employ a configuration in which a protective layer 42 is arranged on the high-refractive-index scattering layer 34 as shown in
With the embodiments described above, it is possible to provide an organic EL device capable of simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
While the present disclosure has been described using the embodiments and the modified examples thereof, it should be appreciated that the present disclosure is not limited to the description and the drawings which form a part of the present disclosure. It will be apparent to those skilled in the art that many different alternative embodiments, examples, and management technologies may be derived from the present disclosure.
For example, the organic EL layer 30 may be a multi-photon emission type organic EL layer having one or more electric charge generation layers and two or more light emitting layers.
It goes without saying that the present disclosure embraces many different embodiments not disclosed herein. Accordingly, the technical scope of the present disclosure is decided by only the subject matters defined in the claims.
The organic EL devices of the present disclosure may be applied to a high-illuminance organic EL lighting field, a high-illuminance organic EL display field, and other like fields.
With the present disclosure, it is possible to provide an organic EL device capable of simultaneously optimizing the internal quantum efficiency and the light extraction efficiency.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the novel devices described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
Number | Date | Country | Kind |
---|---|---|---|
2011-052490 | Mar 2011 | JP | national |
2011-147479 | Jul 2011 | JP | national |
2012-010200 | Jan 2012 | JP | national |