Organic electro-luminescence device and method of manufacturing the same

BACKGROUND OF THE INVENTION

[0001] The invention relates to an organic electro-luminescence device and a method of manufacturing the same, and more particularly, to a method of manufacturing a cap having a light transmissivity and a method of overlapping the cap by self-alignment.

[0002] Generally, an organic electro-luminescence device is finished by sequentially implementing the steps of patterning anode electrodes formed on a glass substrate every element, forming banks for separating a laminate formed on the anode electrodes every element, forming hole-introduction layers, which introduce electron holes from the anode electrodes, in spaces partitioned by the banks, forming hole-transport layers, which transport electron holes to emitting layers, selecting elements and forming emitting layers composed of an organic film for emission in red, green and blue, forming electron-transport layers, which transport electrons from cathode electrodes, forming cathode electrodes, which supplies electrons, and joining a cap to the glass substrate with a sealing adhesive in order to block these laminates from outside.

[0003] Such organic electro-luminescence device as described in JP-A-11-176571 cannot maintain emission of predetermined quality with the lapse of drive time because in spite of airtight sealing by a cap, under the influence of outside air and moisture, peel is caused between emitting layers and electrode layers, constituent materials change in quality, and non-emitting regions called dark spots are generated.

SUMMARY OF THE INVENTION

[0004] As described above, an atmosphere at the time of sealing and a way of maintaining a state immediately after sealing in the future become a problem because of susceptibility to outside air and moisture. Also, since emitting layers are formed from an organic material, there is the possibility that gas is generated after sealing. Therefore, it is essential to perform sealing in a state of receiving an absorbent capable of absorbing gas generated and outside air and moisture entering through a sealant.

[0005] Generally, a cap is shaped such that an inner portion is recessed from an outer periphery thereof to mount therein an absorbent so that the absorbent does not interfere with emitter elements composed of emitting layers, electrodes and soon. Ways to recess an interior of a cap include carving an interior of a glass plate or quartz plate by means of machining or sand blasting, and integral molding of a metallic plate or glass plate by means of a press or the like. In the case of using these caps, there is no problem when emission is taken out from a side of a substrate, on which emitting layers are formed.

[0006] In the case where emission is taken out from a side of a cap, which makes it possible to take out emission at a high numerical aperture without being affected by interception caused by wiring on the substrate and drive elements, a surface condition of the cap possibly causes a problem. That is, with a cap obtained by the method of carving an interior of a glass plate or quartz plate, light transmissivity is made low because of work marks present in the carved interior.

[0007] Also, with a cap obtained in integral molding by means, of a press, taking-out of emission is impossible with a metal plate, and surface accuracy of a die is made important with a glass plate because the surface of the die is transferred to surfaces of the plate. Maintenance of high surface accuracy is difficult, the possibility of degradation in light transmissivity is high because glass surfaces are frosted with deterioration of the die in the case of mass production. In this manner, a first task is to manufacture a cap having a high light transmissivity in the case where emission is taken out from a side of the cap.

[0008] Also, the step of overlapping a cap on a glass substrate, on which emitting layers of an organic electro-luminescence device are formed, and sealing them is implemented in a space closed from outside in order to perform an operation in an atmosphere, from which an active gas and moisture is removed as far as possible. In order to overlap the glass substrate, on which emitting layers of an organic electro-luminescence device are formed, and the cap in the closed space, the positioning function by means of a camera or the like is necessary, and further equipments for irradiating ultraviolet rays for curing of a sealant and heating are also necessary. Therefore, there is a need of a high-performance manufacturing apparatus capable of atmosphere adjustment, having a high close quality, performing positioning while using a camera or the like for ascertaining, irradiating ultraviolet rays, and heating, so that installation cost is necessarily increased. A second task is a need of a high-performance and expensive manufacturing apparatus.

[0009] Hereupon, the invention has its object to provide an organic electro-luminescence device having a cap of high light transmissivity capable of allowing emission to be taken out from a side of the cap, and a manufacturing method thereof, and to provide an organic electro-luminescence device, in which a substrate formed with an organic emitter element and a cap are accurately overlapped together by means of an apparatus having no positioning function, and a manufacturing method thereof.

[0010] In order to solve the above problems, the invention provides an organic electro-luminescence device, in which emitter elements, in which an organic layer having at least an emitting layer is formed in pixel separation banks on anode electrodes and interposed between the anode electrodes and cathode electrodes, are arranged on a emitter element forming substrate composed of a glass substrate or the like, and a material transmitting therethrough ultraviolet rays forms a cap outer-periphery surrounding rib on an outer periphery of a cap substrate composed of a light transmitting substrate having an equivalent physical property to that of the emitter element forming substrate in a picture-frame manner, the emitter elements being arranged inside the cap outer-periphery surrounding rib and covered by the cap outer-periphery surrounding rib and the cap substrate.

[0011] Also, an absorbent for absorption of gas generated or moisture is arranged between an outside of a region, in which the emitter elements are formed, on the emitter element forming substrate opposed to and overlapped on the cap substrate and the cap outer-periphery surrounding rib provided on the cap substrate in a picture-frame manner.

[0012] Further, the cathode electrodes are formed from a light transmitting conductive material and emission generated in the emitting layer is transmitted through the cathode electrodes so that light transmitted through the cathode electrodes is seen through the cap substrate composed of a light transmitting substrate.

[0013] Also, positioning ribs composed of the same material as that of the pixel separation banks, which serve to separate the emitting layer, are provided to surround the emitter elements, and are larger in width than the pixel separation banks, and the pixel separation banks and the positioning ribs, which are made different from each other in film thickness (height) due to a difference in width, are formed in the same processing.

[0014] Further, circumferential and inner circumferential sizes of the positioning ribs are smaller or larger than circumferential and inner circumferential sizes of the cap outer-periphery surrounding rib, so that when the emitter element forming substrate formed with the emitter element and the cap composed of the cap substrate and the cap outer-periphery surrounding rib are overlapped together, sides of the positioning ribs and sides of the cap outer-periphery surrounding rib come into contact with each other and so the positioning ribs serve as a guide when the cap and the emitter element forming substrate are overlapped together.

[0015] In this manner, according to the invention, the cap substrate composed of a light transmitting substrate having a substantially equivalent physical property to that of the emitter element forming substrate, on which emitter elements are formed, is used and a surrounding projection is provided on an outer periphery of the cap substrate in a picture-frame manner, whereby it is possible to obtain a cap of high light transmissivity having an area shaped, of which inner portion is recessed from an outer periphery thereof to receive an absorbent. Further, the absorbent is mounted between an outside of an area, in which opposed emitter elements are formed, and the cap outer-periphery surrounding rib shaped in a picture-frame manner, so that emission is intercepted only by the cap substrate composed of a light transmitting substrate and so can be effectively taken out into a cap side.

[0016] Also, since the positioning ribs are formed on the emitter element forming substrate, on which emitter elements are formed, together with the pixel separation banks, the positioning ribs can be formed without positional deviation relative to an area, in which emitter elements are formed. Circumferential and inner circumferential sizes of the positioning ribs are alternated with circumferential and inner circumferential sizes of the cap outer-periphery surrounding rib, whereby the positioning ribs can serve as a guide at the time of overlapping and so accurate overlapping of the cap can be effected with an area, in which emitter elements are formed, being made a reference, although the positioning function such as camera or the like is not provided.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] These and other features, objects and advantages of the present invention will become more apparent from the following description when taken in conjunction with the accompanying drawings wherein:

[0018]
FIG. 1 is a cross sectional view showing the configuration of members constituting a cap and the positional relationship between the cap and emitter elements;

[0019]
FIGS. 2A and 2B are views illustrating a processing of simultaneously forming pixel separation banks and positioning ribs;

[0020]
FIGS. 3A to 3G are views illustrating steps of manufacturing an organic electro-luminescence device according to a first embodiment;

[0021]
FIG. 4 is a cross sectional view showing a final configuration of an organic electro-luminescence device according to a second embodiment;

[0022]
FIG. 5 is a cross sectional view showing a final configuration of an organic electro-luminescence device according to a third embodiment;

[0023]
FIGS. 6A to 6G views illustrating steps of manufacturing an organic electro-luminescence device according to a fourth embodiment; and

[0024]
FIG. 7 is a cross sectional view showing thin-film transistors according to a sixth embodiment.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0025] An explanation will be given to a first embodiment of an organic electro-luminescence device of the invention.

[0026] While an organic electro-luminescence device includes a low molecular system and a polymer system as an organic material used in portions contributing to emission, the invention puts no limitation on them and an organic electro-luminescence device, in which the both are mixed together, will do.

[0027] An organic electro-luminescence device with a low molecular system is generally composed of glass substrate/anode electrode/hole-injection layer/hole-transport layer/emitting layer/electron-transport layer/cathode electrode/cap.

[0028] Meanwhile, an organic electro-luminescence device with a polymer system is generally composed of glass substrate/anode electrode/hole-transport layer/emitting layer/cathode electrode/cap.

[0029] With an organic electro-luminescence device with a polymer system, a hole-transport layer in some cases has both of characteristics of hole-injection layer/hole-transport layer in an organic electro-luminescence device with a low molecular system, and with an organic electro-luminescence device with a polymer system, only a cathode electrode in some cases does duty for electron-transport layer/cathode electrode in an organic electro-luminescence device with a low molecular system. Also, a cap and a glass substrate are bonded together with a sealant therebetween, and mount therein an absorbent for absorption of moisture and gas. The invention is not limited to materials, composition or the like used in the embodiment, and the embodiment is intended for realizing an organic electro-luminescence device.

[0030] Concrete embodiments of the invention will be described below in detail with reference to the drawings.

[0031] (First Embodiment)

[0032]
FIG. 1 is a cross sectional view showing the configuration of members constituting a cap according to a first embodiment and the positional relationship between the cap and emitter elements. In FIG. 1, the reference numeral 1 denotes an emitter element forming substrate, 2 a cap substrate, 3 a cap outer-periphery surrounding rib, 4 a cap, 5 an absorbent, 6 anode electrodes, 7 pixel separation banks, 8 an emission contributing layer, 9 cathode electrodes, 10 emitter elements, 22 a sealant.

[0033] The emitter element forming substrate 1 is formed from a glass substrate or the like, and the cap substrate 2 is the same light transmitting substrate as that of the emitter element forming substrate 1. The cap 4 is composed of the cap substrate 2 and the cap outer-periphery surrounding rib 3, and the cap outer-periphery surrounding rib 3 is formed on an outer periphery of the cap substrate 2. The emitter elements 10 are composed of the anode electrodes 6, the pixel separation banks 7, the emission contributing layer 8, and the cathode electrodes 9, and the cap outer-periphery surrounding rib 3 is formed in a larger region than that, in which the emitter elements 10 are formed, to have a greater thickness than a total of thickness of the absorbent 5 and the emitter elements 10.

[0034] In addition, the emission contributing layer 8 interposed between the anode electrodes 6 and the cathode electrodes 9 to contribute to emission is varied in layer configuration depending upon the material system (polymer system, low molecular system) of a luminescent layer as described previously.

[0035] The cap outer-periphery surrounding rib 3 can be formed from an organic material and an inorganic material. Methods for forming the rib include a method of straight-writing by means of screen printing, dispenser or the like, and a method of forming the rib by coating a material of the cap outer-periphery surrounding rib 3 on an entire one side of the cap substrate 2 by means of a spinner or the like, and then removing other portions than an unnecessary periphery in exposure and development processing.

[0036] The absorbent 5 serves to absorb gas generated from the emitter elements and outside air and moisture entering from outside after sealing. Also, the absorbent 5 is mounted outside a region, in which the emitter elements 10 are formed, and in a region interposed between inside, surfaces of the cap outer-periphery surrounding rib 3. Thereby, emission can be effectively taken out to an outside through the cap substrate 2, which is formed from a light transmitting substrate, without interrupting emission of the emitter elements 10.

[0037]
FIGS. 2A and 2B are views illustrating a series of processing when pixel separation banks according to the first embodiment of the invention and positioning ribs are formed at the same time. In FIGS. 2A and 2B, the reference numeral 11 denotes a squeegee, 12 a scraper, 13 a head having a mechanism for holding and moving the squeegee 11 and the scraper 12 up and down, 14 a screen form plate, 15 a screen mask, 16 an aperture pattern for transfer of pixel separation banks, 17 an aperture pattern for transfer of positioning ribs, 18 ink, 19 a substrate fixing table, and 20 positioning ribs.

[0038] The squeegee 11 serves to apply ink 18, placed on a surface of the screen mask 15 on a side of the squeegee, to an opposite side of the surface, through the aperture pattern 16 for transfer of pixel separation banks and the aperture pattern 17 for transfer of positioning ribs.

[0039] The scraper 12 serves to fill the ink 18 into the aperture pattern 16 for transfer of pixel separation banks and the aperture pattern 17 for transfer of positioning ribs provided on the screen mask 15. The squeegee 11 and the scraper 12 are moved up and down by the head 13 such that at the time of ink filling, the squeegee 11 is lifted and the scraper 12 is lowered to be brought into close contact with the screen mask 15, and at the time of ink application, the scraper 12 is lifted and the squeegee 11 is lowered to be brought into close contact with the screen mask 15. The screen mask 15 is mounted on the screen form plate 14.

[0040] Apertures in the aperture pattern 17 for transfer of positioning ribs are necessarily formed to have a larger width of apertures in the aperture pattern 16 for transfer of pixel separation banks.

[0041] The reason for this is that the inventors of the present invention have found that in screen printing, thickness of application is varied according to a width of apertures in a screen form plate. Thus the positioning ribs are made thicker than a film thickness of pixel separation banks, and the aperture pattern 17 for transfer of positioning ribs is greater in width than the aperture pattern 16 for transfer of pixel separation banks in order that the positioning ribs be made thicker than a film thickness of pixel separation banks and be formed in the same printing.

[0042] More specifically, there is a tendency that when apertures in a screen form plate have a larger width than a certain width, a coating thickness becomes constant, and as the apertures have a smaller width than the certain width, the coating thickness decreases. By making use of this phenomenon, different coating thickness can be formed in the same printing process and in the same plane. In addition, this tendency of coating thickness relative to the line width is varied according to a material of ink and specifications of a screen form plate.

[0043] In the embodiment, polyimide PP-2000 for screen printing, manufactured by Central Glass Corporation was used for a material for pixel separation banks, and the screen form plate was formed by using No. 500 stainless steel mesh having a wire diameter of 18 μm, an aperture size of 33 μm and a numerical aperture of 42% and forming on the mesh an emulsion (description of product: NSL) manufactured by Tokyo Process Service Corporation and having an excellent solvent resistance, in the film thickness of 30 μm.

[0044] With a combination of the ink material and the screen form plate, the film thickness was formed to be substantially equal to the emulsion thickness on the screen form plate in the range of line width above 150 μm, and the film thickness formed decreased as the line width became smaller than 150 μm such that the film thickness was approximately 5 μm for the line width of 20 μm.

[0045] More specifically, in the case where the width of the aperture pattern 17 for transfer of positioning ribs was made larger than 150 μm and the width of the pattern 16 for transfer of pixel separation banks was made 20 μm, positioning ribs having a film thickness of 30 μm could be formed together with pixel separation banks having a film thickness of 5 μm. The rib having a film thickness of around 30 μm is adequately effective in serving as a positioning guide. In addition, the condition for simultaneous transfer of different coating thickness in screen printing is not limited to the above materials and the screen form plate of the above specifications.

[0046] As shown in FIG. 2A, the anode electrodes 6 formed on the emitter element forming substrate 1 is made in register with the aperture pattern 16 for transfer of pixel separation banks of the screen mask 15, mounted on the screen form plate 14, and the emitter element forming substrate 1 is set and fixed to the substrate fixing table 19. In the embodiment, fine holes provided on the substrate fixing table 19 are made use of to attract and fix the substrate in reduced pressure.

[0047] Subsequently, the ink 18 is placed on the screen mask 15, the head 13 lifts the squeegee 11 and lowers the scraper 12 to bring the same into close contact with the screen mask 15, and thereafter the scraper 12 is moved to scrape the ink 18 and to fill the ink 18 into the aperture pattern 16 for transfer of pixel separation banks and the aperture pattern 17 for transfer of positioning ribs. In FIG. 2A, the above scraping and filling are achieved by moving the scraper 12 from right to left.

[0048] As shown in FIG. 2B, the head 13 lifts the scraper 12 and lowers the squeegee 11 to bring the same into close contact with the screen mask 15, and thereafter the squeegee 11 is moved from left to right to transfer the ink 18 filled in the aperture pattern 16 for transfer of pixel separation banks and the aperture pattern 17 for transfer of positioning ribs, to the emitter element forming substrate 1.

[0049] Thereby, the pixel separation banks 7 are formed in positions, in which the anode electrodes 6 are partitioned from one another, and at the same time the positioning ribs 20 being thicker than the pixel separation banks 7 and having a film thickness capable of adequately taking effect in serving as a guide for positioning can be formed on the outer periphery of the emitter element forming substrate 1.

[0050]
FIGS. 3A to 3G are views showing the process of manufacturing an organic electro-luminescence device according to the first embodiment of the invention. In FIGS. 3A to 3G, the reference numeral 21 denotes an external terminal, and 22 a sealant.

[0051] In the embodiment, the anode electrodes 6 and the external terminal 21 are first formed on one side of the luminous layer forming substrate 1 as shown in FIG. 3A. Since emission is taken out from a side of the cap, the emitter element forming substrate is not required to be transparent. However, the substrate preferably assumes the same physical property as the cap. In the embodiment, since a glass substrate having a high light transmittance was used for the cap substrate, a glass substrate (#1737 manufactured by Coring Corporation) of the same quality was used. Also, in the embodiment, since the emitting layers were formed to have a 15.2 inch size of the slenderness ratio of 3:4, the glass substrate was greater 20 mm in respective sides than the emitting layers to have a size of 348 mm×271 mm. Also, the glass substrate had a thickness of 0.7 mm.

[0052] Since emission is taken out from a side of the cap, the anode electrodes 6 are also not required to be transparent, and so metallic materials or the like having a high electric conductivity can be used for the anode electrodes. Such materials include Cr, Mo—Ta, Ta, Al or the like. Likewise, materials having a high electric conductivity are preferably used for the external terminal 21. In the embodiment, the anode electrodes 6 and the external terminal 21 were formed through exposure and development after sputtering was used to coat an entire surface with a conductive material. In addition, the surfaces of the anode electrodes 6 are preferably smooth. Also, in the embodiment, Al was used to form the anode electrodes 6 and the external terminal 21.

[0053] Subsequently, the emitter element forming substrate 1 was held on the substrate fixing table 19 in a manner to have the anode electrodes 6 and the external terminal 21 facing upward as shown in FIG. 3B, and the pixel separation banks 7 and the positioning ribs 20 having a greater film thickness than that of the banks were formed in the same process by means of the method illustrated in FIG. 2. In addition, materials for the pixel separation banks 7 and the positioning ribs 20 are the same and include polyimide paste, maleimide varnish, polyamide, and so on, the materials being preferably of high thixotropy in terms of shape preserving quality. Also, the materials are not limited to polyimide but may be ones having a less hygroscopicity and susceptible of less gas generation.

[0054] In the embodiment, polyimide PP-2000 for screen printing, manufactured by Central Glass Corporation was used such that after coating, it was raised to 220° C. from room temperature at the rate of 5° C./min in an atmosphere of nitrogen, and after 220° C. was reached, it was maintained 60 minutes to be cured. Also, the screen form plate was formed by using No. 500 stainless steel mesh having a wire diameter of 18 μm, an aperture size of 33 μm and a numerical aperture of 42% and forming on the mesh an emulsion composed of screen mask forming photosensitive resin manufactured by Tokyo Process Service Corporation and having an excellent solvent resistance to form a pattern.

[0055] In the embodiment, one pixel had a display size of 280 μm in length and 80 μm in width, and a pitch of 300 μm in length and 100 μm in width. Since pixel separation banks must cover other areas than display areas, they have a size of 20 μm in both length and width, a pitch of widthwise lines being 300 μm, and a pitch of lengthwise lines being 100 μm. An area, in which pixel separation banks were formed, had a size of 308 mm×231 mm with a diagonal line of 15.2 inches, and the number of pixels provided therein were 1024×3 (three colors of red, green, blue), that is, a total of 3072 in width and 768 in length. Also, the thickness of the pixel separation banks is determined by thickness of respective layers, which constitute emitter elements, and methods of forming the respective layers.

[0056] Materials for the emitting layers used in the embodiment comprise a polymer system. Also, the emission contributing layer 8 is composed of hole-transport layer/emitting layers, and the emitter elements are composed of anode electrodes/hole-transport layers/emitting layers/cathode electrodes. The anode electrodes 6 and the cathode electrodes 9 were formed by means of sputtering and deposition, and the hole-transport layers and the emitting layers were coated by means of ink jet. The anode electrodes and the cathode electrodes formed by means of sputtering and deposition were not so much varied in film thickness from immediately after formation and had a film thickness of around 100 nm.

[0057] Meanwhile, a diluted ink is used since the hole-transport layers and the emitting layers are coated by means of ink jet. Therefore, great variation in film thickness is caused immediately after application and after drying, in which a solvent is volatilized. In the embodiment, materials being diluted to contain a solid having a concentration of 3% were used for the hole-transport layers and the emitting layers having red, green and blue colors, and the layers, respectively, were set to 0.1 μm in film thickness after drying, so that the film thickness was 3.3 μm in a non-dried state immediately after application. In the case where the layers are formed with the use of ink diluted by ink jet or the like, the thickness of pixel separation banks is determined by a film thickness immediately after application of the diluted ink.

[0058] In the embodiment, since the hole-transport layers and the emitting layers having red, green and blue colors had a thickness of 3.3 μm immediately after application, pixel separation banks was made to have a greater film thickness of 5 μm than the above thickness. When performing application with the line width being 20 μm and the film thickness being 5 μm, an emulsion for formation of a pattern in the screen form plate is 30 μm.

[0059] In addition, there is a tendency in screen printing that when a line width is greater than a certain line width, a coating thickness becomes constant, and when a line width decreases from the certain line width, a coating thickness decreases as described previously. With a combination of the materials for pixel separation banks and the screen form plate, the tendency of coating thickness relative to a width of apertures in a screen form plate is varied depending upon whether the width of apertures in a screen form plate is above or below 150 μm. Preferably, the positioning ribs 20 have a great thickness in terms of the guiding-quality. In the case of the above screen form plate, since a line width having no influence on a film thickness is 150 μm or more, the positioning ribs 20 were made 200 μm larger than the above film thickness and had a size of 320 mm×243 mm to surround a region, in which the emitter elements were formed.

[0060] Subsequently, the emission contributing layer 8 was formed in the pixel separation banks as shown in FIG. 3C. In addition, in the embodiment, the emitting layers of a polymer system were used as described above, and the emission contributing layer 8 between the anode electrodes and the cathode electrodes was composed of hole-transport layers/emitting layers, each of which were applied in the banks. Methods of application include a screen printing method, an ink jet method, and so on, the ink jet method being used in the embodiment. In addition, the hole-transport layers/emitting layers were common to all the colors, and a water colloidal solution (BYTORON P-CH-8000, manufactured by Bayer) containing a high polymer (3,4-ethylene dioxythiophene) being an electrically conductive high polymer and a polystyrene sulfonic acid being a dopant was used as an ink for hole-transport materials.

[0061] Also, used as inks for luminescent materials for emission of respective colors were Green-K manufactured by Dow Corporation compounded of 1,2,3,4-tetramethylbenzene for green color, Red-F manufactured by Dow Corporation compounded of 1,2,3,4-tetramethylbenzene for red color, and Blue-C manufactured by Dow Corporation compounded of 1,3,5-trimethylbenzene for blue color. In addition, while the hole-transport layers/emitting layers were common to all the colors, a material and film thickness may be changed every color although productivity is decreased.

[0062] Subsequently, the cathode electrodes 9 composed of a light transmitting conductive material were formed separately every pixel on a substrate, in which emitting layers of red, green and blue colors were formed on predetermined banks, by means of sputtering, as shown in FIG. 3D. In the embodiment, ITO having a sheet resistivity of about 10 Ω/cm2 was used as a material for the cathode electrodes. Since emission is taken out upwardly of the cathode electrodes, any metallic material permitting no light transmission cannot be used as a material for the cathode electrodes and a material having a high light permeability and a high electric conductivity is preferable.

[0063] Subsequently, the cap outer-periphery surrounding rib 3 was formed on an outer periphery of the cap substrate 2, being composed of a light transmitting substrate, in a picture-frame manner as shown in FIG. 3E, and the absorbent 5 was mounted in a region surrounded by the cap outer-periphery surrounding rib 3 and in a range not interfering with a region, in which the emitter element were formed, when the cap 4 composed of the cap substrate 2 and the cap outer-periphery surrounding rib 3 was overlapped on the emitter element forming substrate 1. As illustrated with reference to FIG. 1, the cap substrate 2 preferably has a high light permeability. In the embodiment, used for the cap substrate 2 was a glass substrate (#1737 manufactured by Coring Corporation) being of the same quality as that of the emitter element forming substrate 1 and having a plate thickness of 0.7 mm and a size of 328 mm×251 mm.

[0064] Also, as illustrated with reference to FIG. 1, the absorbent 5 serves to absorb gas generated from the emission contributing layer 8 of an organic material and outside air and moisture entering through a sealant after the cap 4 and the emitter element forming substrate 1 were overlapped and sealed with the use of the sealant in the succeeding processing. Also, the cap outer-periphery surrounding rib 3 was sized to have its sides alternately contacting with the positioning ribs 20 and to have a greater thickness than the sum of thickness of the positioning ribs 20 and the absorbent 5. Since the absorbent 5 used in the embodiment had a thickness of 500 μm and the positioning ribs 20 also used in the embodiment had a thickness of 30 μm, the cap outer-periphery surrounding rib 3 was formed to have a thickness of 800 μm greater than the sum of thickness.

[0065] Methods of forming the cap outer-periphery surrounding rib 3 include a method of straight-writing by means of screen printing, dispenser or the like, and a method of forming the rib on an entire surface of the substrate by means of a spinner or the like, and then removing other portions than an unnecessary periphery in exposure and development processing. In the embodiment, screen printing was used to form the cap outer-periphery surrounding rib having a size of 322 mm×245 mm and a line width of 1800 μm so as to have an inner peripheral side of the cap outer-periphery surrounding rib 3 contacting with the positioning ribs 20 having a size of 320 mm×243 mm.

[0066] Also, a material for the cap outer-periphery surrounding rib 3 preferably has a good adherence to a surface of the cap substrate, a less hygroscopicity and is susceptible of less gas generation, the material itself preferably has a high seal effect, and an interface between the rib and the cap substrate and the rib itself are preferably as little pervious as possible to outside air and moisture. Also, a material having less absorption of ultraviolet light is used for the cap outer-periphery surrounding rib so that ultraviolet light is irradiated from a cap side to enable curing a sealant in the case where an ultraviolet-light curing material is used for the sealant.

[0067] This makes it possible to irradiate the ultraviolet light on the sealant more uniformly than irradiation from a side of the emitter element forming substrate, in which an area shielded by an external terminal is produced, so that the sealant can cure more stably in the substrate surfaces. In the embodiment, polyimide PP-2000 for screen printing, manufactured by Central Glass Corporation, and being the same as that used for a material for the pixel separation banks was used for projections on an outer periphery of the cap.

[0068] Subsequently, the sealant 22 was applied in a position outside the positioning ribs 20 and opposed to the cap outer-periphery surrounding rib 3 as shown in FIG. 3F. This application method includes a dispenser and screen printing. In the embodiment, a dispenser was used to apply the sealant 22.

[0069] Materials for the sealant include UV (ultraviolet) cure materials, hot cure materials, and ultraviolet hot cure materials. In the case of using UV cure materials and ultraviolet hot cure materials, it is possible that ultraviolet light is scattered and irradiated on the organic electro-luminescence device in an area-close to the sealant at the time of ultraviolet irradiation to generate degradation (reduction in service life) in luminance. Also, in the case of using hot cure materials, and ultraviolet hot cure materials, it is possible that when curing is effected at temperatures above 100° C., the organic electro-luminescence device is affected to generate degradation (reduction in service life) in luminance as in the case of ultraviolet. In the embodiment, used for the sealant was an ultraviolet hot cure material adapted to be subjected to primary curing by ultraviolet irradiation and then secondary curing (main curing) by heating at 80° C.

[0070] Subsequently, as shown in FIG. 3G, the self-alignment effect given by the positioning ribs 20 and the cap outer-periphery surrounding rib 3 caused the emitter element forming substrate 1 and the cap 4 to be made in registry with each other only by overlapping, and after effecting shielding sufficient to eliminate leakage of ultraviolet light to an emitter element forming region, ultraviolet light was irradiated from outside the cap substrate 2 to cure the sealant 22. At this time, even without lateral restraint, the cap 4 and the emitter element forming substrate 1 as overlapped were prevented by the cap outer-periphery surrounding rib 3 and the positioning ribs 20 from deviating from each other.

[0071] Subsequently, heating was effected at 80° C. in an oven to subject the sealant 22 to secondary curing (main curing). In addition, the operation was wholly carried out in nitrogen being an inert gas. Since the positioning ribs and the cap outer-periphery surrounding rib alternately contact with each other in locations where bonding is effected by the sealant, a bonding distance (width) of the sealant is made longer than that in the case of planar surface bonding with the sealant being the same in width, so that it is possible to prevent outside air and moisture from entering.

[0072] Subsequently, a display could be fabricated by connecting a drive circuit to the external terminal 21. The display made it possible to see a picture image through the cap.

[0073] (Second Embodiment)

[0074] An organic electro-luminescence device was fabricated in the same manner as in the first embodiment except that the positioning ribs 20 were arranged outside the cap outer-periphery surrounding rib 3.

[0075]
FIG. 4 is a view showing a final configuration of an organic electro-luminescence device according to a second embodiment.

[0076] In the embodiment, the cap outer-periphery surrounding rib 3 having a size of 322 mm×245 mm and a width of 1800 μm was formed, the positioning ribs having a size of 324 mm×247 mm and a width of 200 μm was formed, and the positioning ribs 20 was arranged outside the cap outer-periphery surrounding rib 3. At the time of overlapping the emitter element forming substrate 1 and the cap 4 together, an inner peripheral side of the positioning ribs 20 came into contact with an outer peripheral side of the cap outer-periphery surrounding rib 3 serve as a guide, thus enabling achieving overlapping with less positional deviation.

[0077] In addition, the positioning ribs 20 was formed to have a thickness of 800 μm greater than the sum of a thickness of 500 μm of the absorbent and a thickness of about 5.1 μm of the emitter elements as formed. Also, the sealant 22 was applied on an inner periphery of the positioning ribs 20 by means of screen printing, dispenser or the like, and since the sealant was crushed and spread inward when the emitter element forming substrate 1 and the cap 4 were overlapped, it was necessary to adjust an amount of the sealant 22 so that no sealant reached a region where the emitter elements were formed.

[0078] (Third Embodiment)

[0079] An organic electro-luminescence device was fabricated in the same manner as in the first embodiment except that the positioning ribs were doubly formed concentrically, the sealant was applied in a region surrounded by the ribs, and the cap outer-periphery surrounding rib was arranged there.

[0080]
FIG. 5 is a view showing a final configuration of an organic electro-luminescence device according to a third embodiment. In FIG. 5, the reference numeral 35 denotes first positioning ribs, and 36 second positioning ribs.

[0081] In the embodiment, the cap outer-periphery surrounding rib 3 having a size of 322 mm×245 mm and a width of 1800 μm was formed, the first positioning ribs 35 having a size of 320 mm×243 mm and a width of 200 μm was formed, the second positioning ribs 36 having a size of 324 mm×247 mm and a width of 200 μm was formed, and the cap outer-periphery surrounding rib 3 was arranged in a region interposed between the first positioning ribs 35 and the second positioning ribs 36.

[0082] At the time of overlapping the emitter element forming substrate 1 and the cap 4 together, an outer peripheral side of the first positioning ribs 35 and an inner peripheral side of the second positioning ribs 36 came into contact with sides of the cap outer-periphery surrounding rib 3 to serve as a guide, thus enabling achieving overlapping with less positional deviation.

[0083] In addition, since the sealant 22 was applied in a region interposed between the first positioning ribs 35 and the second positioning ribs 36, even a sealant having a low viscosity could be used without flowing outside.

[0084] (Fourth Embodiment)

[0085]
FIG. 6 is a view showing the process of manufacturing an organic electro-luminescence device according to a fourth embodiment.

[0086] In the embodiment, an ITO being a transparent, conductive material was first applied on an entire one side of the emitter element forming substrate 1 being a light transmitting substrate by means of sputtering as shown in FIG. 6A, and anode electrodes 6 and an external terminal 21 were formed through exposure and development. In addition, the surfaces of the anode electrodes 6 are preferably smooth. In addition, in the embodiment, ITO as used had a sheet resistivity of about 10 Ω/cm2 or less and surfaces thereof were subjected to smoothening processing.

[0087] Subsequently, the emitter element forming substrate 1 was held on the substrate fixing table 19 in a manner to have the anode electrodes 6 and the external terminal 21 facing upward as shown in FIG. 6B, and the pixel separation banks 7 and the positioning ribs 20 having a greater film thickness than that of the banks were simultaneously formed by means of the method illustrated in FIG. 2. In the embodiment, since emission is taken out from a side of the emitter element forming substrate 1, a drive circuit formed on the emitter element forming substrate 1 makes interference, so that in the case where pixels are formed in the same number and in the same area, a display area becomes smaller in size than that in the case where emission is taken out from a side of the cap.

[0088] In the embodiment, one pixel had a display size of 180 μm in length and 80 μm in width, and a pitch of 300 μm in length and 100 μm in width. Since pixel separation banks must cover other areas than display areas, they are sized to have a widthwise line width of 120 μm, and a lengthwise line width of 20 μm, and a pitch of widthwise lines being 300 μm and a pitch of lengthwise lines being 100 μm.

[0089] Likewise the first embodiment, an area, in which pixel separation banks were formed, had a size of 308 mm×231 mm with a diagonal line of 15.2 inches, and the number of pixels provided therein were 1024×3 (three colors of red, green, blue), that is, a total of 3072 in width and 768 in length. In the embodiment, since the same hole-transport layers and the same emitting layers as those in the first embodiment were used, the pixel separation banks were likewise formed to have a film thickness of 5 μm. Also, in the embodiment, since the same screen form and the same plate pixel separation banks as those in the first embodiment were used, an emulsion for formation of a pattern in the screen form plate was 30 μm when performing application with the line width being 20 μm and the film thickness being 5 μm.

[0090] In addition, there is a tendency in screen printing that when a line width is greater than a certain line width, a coating thickness becomes constant, and when a line width decreases from the certain line width, a coating thickness decreases as described previously. With a combination of the materials for pixel separation banks and the screen form plate, the tendency of coating thickness relative to a width of apertures in a screen form plate is varied depending upon whether the width of apertures in a screen form plate is above or below 150 μm. More specifically, when lengthwise lines having a width of 20 μm and widthwise lines having a width of 120 μm are formed in a screen form plate having apertures of the same width, the lengthwise lines having a width of 20 μm are coated to have a film thickness of around 5 μm while the widthwise lines having a width of 120 μm are coated to have a film thickness of around 25 μm close to a thickness of an emulsion for a screen form plate, thus producing a large difference in film thickness between lengthwise lines and widthwise lines in the same pixel separation banks.

[0091] Hereupon, in order to make lengthwise lines and widthwise lines in pixel separation banks uniform, the widthwise lines having a width of 120 μm are divided into patterns, in which three widthwise lines having a width of 25 μm were arranged in a spacing of 22.5 μm, to be printed to be greater in thickness than the lengthwise lines having a width of 20 μm, and then an ink was caused to flow into space areas to be leveled, thus filling the spaces and making the widthwise lines equal in level to the lengthwise lines. The operation except the above was the same as in FIG. 3B, and so an explanation therefor is omitted.

[0092]
FIG. 6C showing the next processing is the same as FIG. 3C except that a pixel forming region is small, and so an explanation therefor is omitted.

[0093] Subsequently, cathode electrodes were separated every pixel and formed on a substrate, in which emitting layers of red, green and blue colors were formed on predetermined banks, as shown in FIG. 6D by means of the vacuum evaporation method. In the embodiment, Al/Ca was used as a material for the cathode electrodes. In addition, the material for the cathode electrodes is not limited to Al/Ca provided that the work function is small.

[0094] Subsequently, the cap outer-periphery surrounding rib 3 was formed on an outer periphery of the cap substrate 2, being composed of a light transmitting substrate, in a picture-frame manner as shown in FIG. 6E, and the absorbent 5 was mounted in a region surrounded by the cap outer-periphery surrounding rib 3. In the embodiment, since emission is taken out from a side of the emitter element forming substrate, the absorbent 5 may be fixed a region, in which the emitter elements were formed, when the cap was overlapped on the emitter element forming substrate. Also, it is possible to use a cap formed by carving an interior of a glass plate or quartz plate by means of machining or sand blasting and a cap formed by integral molding of a metallic plate or glass plate by means of a press or the like.

[0095] In addition, in the case of using a cap formed by means of machining, press or the like, the positioning ribs 20 must be dimensionally adjusted to projections on a periphery of the cap so that when the cap and the emitter element forming substrate are to be overlapped together, the positioning ribs alternately come into contact with the projections on the periphery of the cap. Also, a dispenser and screen printing may be used to further form cap outer-periphery surrounding ribs on projections on a periphery of a cap carved by means of machining or a cap formed by means of a press or the like, and positioning in overlapping may be made by the use of positioning ribs as a guide.

[0096]
FIG. 6F showing the next processing is the same as FIG. 3F, and so an explanation therefor is omitted.

[0097] Subsequently, as shown in FIG. 6G, the self-alignment effect given by the positioning ribs 20 and the cap outer-periphery surrounding rib 3 caused the emitter element forming substrate 1 and the cap 4 to be made in registry with each other only by overlapping, and after effecting shielding sufficient to eliminate leakage of ultraviolet light to an emitter element forming region, ultraviolet light was irradiated from outside the cap substrate to cure the sealant. Subsequently, heating was effected at 80° C. in an oven to subject the sealant to secondary curing (main curing). In addition, the operation was wholly carried out in nitrogen being an inert gas.

[0098] Subsequently, a display could be fabricated by connecting a drive circuit to the external terminal 21. The display made it possible to see a picture image through the emitter element forming substrate. In addition, while the positioning ribs 20 were mounted inside the cap outer-periphery surrounding rib 3 in the same manner as in the first embodiment, the positioning ribs may be configured in the same manner as in the second and third embodiments.

[0099] (Fifth Embodiment)

[0100] An organic electro-luminescence device was fabricated in the same manner as in the first, second, third and fourth embodiments except the use of an ink material having a lower light transmissivity than that used as a material for pixel separation banks.

[0101] In the embodiment, a material for pixel separation banks having a light transmissivity of 0.05% in the range of light wavelength of 300 to 800 nm and thus having little light transmitting therethrough was prepared by mixing black ultra-fine particles NanoTek Black-1 manufactured by CI Kasei Corporation having a concentration of 3% in volume ratio into polyimide PP-2000 for screen printing, manufactured by Central Glass Corporation and used as a material for pixel separation banks in the first, second, third and fourth embodiments. By using the material as a material for pixel separation banks, entry of light into the pixel separation banks could be prevented, and a phenomenon of mixing of emission from adjacent pixels and leakage of light outside from the pixel separation banks could be prevented. In addition, the device is not limited to the above material for pixel separation banks and the black ultra-fine particles, and a material having a lower light transmissivity is preferable as the material for pixel separation banks.

[0102] (Sixth Embodiment)

[0103] An organic electro-luminescence device was fabricated in the method described in one of the first to fifth embodiments except the use of an emitter element forming substrate formed thereon with thin-film transistors in place of the emitter element forming substrate formed thereon with the anode electrodes.

[0104] Thin-film transistors are manufactured through the step of applying an organo-silicon nano-cluster on a substrate having an insulating surface, the step of oxidizing the organo-silicon nano-cluster to form an oxide silicon film, the step of forming an island non-single crystal silicon film having a source region, drain region, and a channel region interposed therebetween, the step of forming a gate insulating film on the island non-single crystal silicon film, and the step of forming gate electrodes in the channel region with the gate insulating film therebetween, and commonly known methods can be used for the respective steps.

[0105] Here, the organo-silicon nano-cluster indicates an organic silicone compound, which is soluble in organic solvents and has a band gap of 3 eV to 1.2 eV and which is obtained by reacting a silane tetrahalide and an organic halide in the existence of alkali metal and alkaline-earth metal and further processing the same with hydrofluoric acid. A part of silane tetrahalide may be replaced by silane trihalide or silane dihalide.

[0106] The organo-silicon nano-cluster thus obtained is soluble in conventional organic solvents such as hydrocarbon, alcohol, ether, aromatic solvents, polar solvents, and so on. Also, the processing with hydrofluoric acid is carried out at the last of composition whereby oxygen atoms taken into the silicone nano-cluster can be removed from oxygen, water, and terminator contained in the reaction system. Such oxygen atoms are not preferable since they are responsible for creation of silicone oxide films in the case where silicone thin-films are to be obtained. By performing the processing with hydrofluoric acid, a silicone nano-cluster as a precursor for silicone thin-films, containing no oxygen atom can be obtained.

[0107] Thin films of organo-silicon nano-cluster can be obtained from a solution with organo-silicon nano-cluster dissolved in a suitably selected solvent by means of a conventional thin-film forming method such as wet process including a spin coating method, dipping method and so on. When the organo-silicon nano-cluster as deposited is heated or subjected to irradiation of ultraviolet rays in an atmosphere free of oxygen or reducing atmosphere, silicone thin films can be obtained, and-when heated or subjected to irradiation of ultraviolet rays in an oxidizing atmosphere, oxide silicon thin films can be obtained.

[0108] The above heating and irradiation of ultraviolet rays may be combined with each other. Also, laser irradiation in an atmosphere substantially free of oxygen or reducing atmosphere makes it possible to obtain silicon thin films.

[0109] TFT is formed on an oxide silicon thin film with such organo-silicon nano-cluster as a precursor. As described above, the organo-silicon nano-cluster contains silane tetrahalide as a stock thereof, and the oxide silicon thin film-with the organo-silicon nano-cluster as a precursor contains halogen. Halogen takes effect in segregating, catching and getting sodium ions, potassium ions, and the like to effectively prevent dispersion of impurities into TFT from a glass substrate. Further, the thicker a film thickness of the oxide silicon film, the more the effect of prevention of dispersion of impurities. The organo-silicon nano-cluster can be deposited by means of the spin coating method, is easy to form a thick film having a large area, and capable of suppressing variation of a threshold caused by impurities and eliminating generation of warp and crack. Therefore, the invention is very useful in manufacture of an organic electro-luminescence device, in which a glass substrate having a large area is used.

[0110] Also, the step of oxidizing the organo-silicon nano-cluster and the step of making the organo-silicon nano-cluster a silicon thin film without oxidizing the organo-silicon nano-cluster are suitably combined to be able to form an oxide silicon film in a manner to have the same surrounding an island silicon layer and its neighborhood, thus enabling realizing a structure, in which a difference in level is decreased in ends of an island semiconductor layer, and preventing reduction in withstand voltage, due to thin-filming of the gate insulating film. Besides, this technique can reduce manufacture cost because the island semiconductor layer and its neighborhood can be formed in a less number of steps than a conventional island semiconductor layer forming method including exposure, development and etching.

[0111] The thin-film transistors according to the invention comprise an oxide silicon film provided on a substrate having an insulating surface, a plurality of island non-single crystal semiconductor layers having main surfaces and end surfaces, the island non-single crystal semiconductor layers having a source region, drain region, and a channel region, interposed therebetween, a first insulating film in contact with only the end surfaces of the island non-single crystal semiconductor layers, a second insulating film covering the island non-single crystal semiconductor layers and the first insulating film, and gate electrodes formed on the channel region with the second insulating film therebetween, and source electrodes and drain electrodes in contact with the source region and the drain region, the oxide silicon film containing halogen.

[0112] Since the island non-single crystal semiconductor layers and the first insulating film contact with each other only at the end surfaces, a difference in level is small therebetween to be able to prevent reduction in withstand voltage, due to thin-filming of the gate insulating film. Further, since the oxide silicon film contains halogen, it is possible to effectively prevent entry and dispersion of impurities into the gate oxide film from a glass substrate.

[0113] First, an explanation will be given to a method of preparing an organo-silicon nano-cluster solution. Shaved Mg metal (64 mmol) as an alkali metal is put in a round bottom flask and heated in a vacuum at 120° C. to be activated, and after cooling of the metal, the reaction system is put in a nitrogen atmosphere and a dehydrated tetrahydrofuran (THF) is added. While applying ultrasonic waves (60 W) to the semi-product at 0° C., tetrachlorosilane (16 mmol) is added for reaction. After reaction over 2.5 hours, a dark brown reaction liquid generated is made to react with tert-butyl bromide (16 mmol).

[0114] After reaction for one hour, the reaction liquid is raised to 50° C. and further caused to make reaction over 0.5 hour. The reaction liquid is made to dripin distilled water and an insoluble content is recovered by means of the filtering method. The recovered insoluble content is dispersed in a 47% hydrof luoric acid and caused to agitatingly react for 30 minutes, thus providing another insoluble content by means of filtration. Toluene as a solvent is used to prepare a 16 weight % solution of the insoluble content to make the same an organo-silicon nano-cluster solution.

[0115] A method of forming thin-film transistors on a glass substrate will be described with reference to FIG. 7.

[0116] The spin coating method with the speed of revolution adjusted is used to apply the organo-silicon nano-cluster solution on an emitter element forming substrate 1 (348 mm×267 mm) composed of non-alkali glass having a strain point of 670° C. to provide for a film thickness of 500 nm, and the solution is dried on a hot plate at 80° C. for one minute. Thereafter, a 500W ultra-high mercury lamp is used in an oxygen atmosphere to irradiate ultraviolet rays for 3 minutes to provide an oxide silicon film (SiO2) 23. Further, the plasma CVD method is used to accumulate an amorphous silicon layer 50 nm thick. Subsequently, XeCl excimer laser is irradiated to crystallize the amorphous silicon layer to provide a polysilicon film.

[0117] Subsequently, a known photo-etching processing is used to pattern the polysilicon film to provide an island polysilicon layer 24. Thereafter, the plasma CVD method is used to accumulate a SiO2 film, which will make a gate insulating film 25, 70 nm thick, and further the sputtering method is used to accumulate Nb 250 nm thick. A known photo-etching processing is used to pattern Nb to form gate electrodes 26.

[0118] Subsequently, a high-resistance N type polysilicon layer 27 is formed for N channel thin-film transistors with the gate electrodes 26 as a mask and with the use of ion implantation, and then a low-resistance N type polysilicon layer 28 is formed with resist as a mask. Meanwhile, a low-resistance P type polysilicon layer 29 is formed for P channel thin-film transistors with the gate electrodes 26 as a mask and with the use of ion implantation.

[0119] A desirable range of sheet resistance of the high-resistance polysilicon layer is 20 kΩ to 100 kΩ, and a desirable range of sheet resistance of the low-resistance polysilicon layer is 500 Ω to 1000 Ω. Further, an interlayer insulating film 30 composed of, SiO2 is formed in a manner to cover the whole layers, and source electrodes 31, drain electrodes 32 and wirings, which are composed of a three-layer metal film of Ti/Al/Ti, are formed through contact through holes formed in the interlayer insulating film 30. Here, the use of the three-layer metal film is intended for reducing a contact resistance between the low-resistance polysilicon layer and Al and a contact resistance between pixel electrodes (ITO) 34 and Al.

[0120] After patterning of the source electrodes 31, drain. electrodes 32 and wirings, a protective insulating film 33 composed of Si3N4 and having a film thickness of 500 nm is formed in a manner to cover the whole layers, and further the pixel electrodes (ITO) 34 and the source electrodes 31 of the N channel thin film transistor 28 in a picture image display are connected to each other through contact through holes formed in the protective insulating film 33.

[0121] Oxidation of the organo-silicon nano-cluster at the time of formation of the substrate layer may be made by means of the heating method or a combination of the ultraviolet ray irradiation method and the heating method. In this case, irradiation of ultraviolet rays takes effect in enhancing a throughput, and heating takes effect in improving a film quality such as minuteness of a film. Also, not only an oxide silicon film but also a laminate film of oxide silicon and thin silicon nitride may be used as the substrate layer. When silicon nitride is used as a buffer layer, it is possible to effectively prevent entry and dispersion of impurities into the gate oxide film from a glass substrate.

[0122] A method of crystallizing amorphous silicon may be the solid growth method making use of thermal annealing and a combination of thermal annealing and laser annealing. The gate insulating film may be an oxide film of organo-silicon nano-cluster. Action of halogen in the film suppresses movements of sodium, potassium, or the like. Also, the method of accumulating an insulating film such as the interlayer film, protective film, or the like may be a known accumulation method such as the plasma CVD method or the like. Also, materials for the gate, source, and drain electrodes may be a known electrode material such as Al, Ti, Ta or the like.

[0123] Also, while heating is made at 500° C. in a vacuum condition (1×10−5 Torr) for one hour prior to irradiation of XeCl excimer laser, ultraviolet rays may be irradiated in an atmosphere substantially free of oxygen or reducing atmosphere, or the both may be combined. Irradiation of ultraviolet rays takes effect in enhancing a throughput, and heating takes effect in improving a film quality such as minuteness of a film. Further, the processing may be omitted, and crystallization may be effected by laser irradiation in an atmosphere substantially free of oxygen or reducing atmosphere. In this case, the processing is simplified and so manufacturing cost can be reduced.

[0124] Also, the method of oxidizing the organo-silicon nano-cluster may be heating in an oxidizing atmosphere. In this case, it is desirable to form an island semiconductor layer prior to oxidation. A dense film can be obtained by heat treatment after formation of an island semiconductor layer. A further manufacturing method of covering portions, which will make an island semiconductor layer, with a mask, and simultaneously forming the island semiconductor layer and an insulating film therearound by means of heating in an oxidizing atmosphere is effective in simplifying the manufacturing processing. Further, the film quality of the semiconductor layer is improved by removing a mask and irradiating ultraviolet rays or laser.

[0125] Since the oxide silicon film or the non-single crystal silicon film is formed after the organo-silicon nano-cluster is deposited by means of the spin coating method, the method of oxidizing is effective in a processing making use of a large-sized substrate. Also, since the oxide silicon film formed from the organo-silicon nano-cluster contains halogen, it is possible to prevent degradation in the characteristics of thin-film transistors due to impurities in a glass substrate.

[0126] Further, since a construction, in which a difference in level in ends of an island semiconductor layer is reduced, can be realized, reduction in withstand voltage, due to thin-filming of the gate-insulating film can be prevented. This technique can reduce manufacture cost because the island semiconductor layer and its neighborhood can be formed in a less number of steps, including exposure and heating, or only exposure, or the like, than a conventional island semiconductor layer forming method including exposure, development and etching. Also, since the island semiconductor layer and the insulating film therearound contain halogen, it is possible to prevent degradation in the characteristics of thin-film transistors due to entry and dispersion of impurities into the gate insulating film from a glass substrate.

[0127] The manufacturing method, described above, according to the invention adopts the spin coating method in place of the conventional CVD method, and so can reduce electric power at the time of deposition. Therefore, it is possible to provide a highly reliable and inexpensive liquid crystal display. Of course, only by changing the manufacturing method of non-single crystal silicon film from the conventional CVD method to the spin coating method of the invention, uniform deposition can be made on a large-sized substrate and manufacturing cost can be reduced owing to advantages such as reduction in electric power at the time of deposition, or the like to provide an inexpensive liquid crystal display.

[0128] In the above deposition, after the organo-silicon nano-cluster is deposited by means of the spin coating method, irradiation of ultraviolet rays may be made in an atmosphere substantially free of oxygen or reducing atmosphere, and heating may be performed. Further, the both may be combined. Irradiation of ultraviolet rays takes effect in enhancing a throughput, and heating takes effect in improving a film quality such as minuteness of a film. When laser irradiation is further performed after irradiation of ultraviolet rays or heating, the crystalline quality of silicone is improved and the characteristics of thin-film transistors is improved. Further, the processing of irradiation of ultraviolet rays or heating may be omitted and laser irradiation maybe performed in an atmosphere substantially free of oxygen or reducing atmosphere to effect crystallization. In this case, manufacturing cost can be reduced since the processing is simplified.

[0129] The method of creating thin-film transistors is not limited to the embodiment but conventional methods used for liquid crystal panels will do.

[0130] According to the invention, a cap substrate having a light transmissivity is used to be bonded to a substrate with emitter elements to arrange therein an absorbent to afford an organic electro-luminescence device of high reliability, and pixel separation banks and positioning ribs are created in the same step to enable simplification of processing and assembling with high accuracy.

[0131] While we have shown and described several embodiments in accordance with our invention, it should be understood that disclosed embodiments are susceptible of changes and modifications without departing from the scope of the invention. Therefore, we do not intend to be bound by the details shown and described herein but intend to cover all such changes and modifications falling within the ambit of the appended claims.

Organic electro-luminescence device and method of manufacturing the same

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