The present invention relates to a novel design principle for organic electroluminescent elements and to their use in displays based thereon.
In a series of different types of application which can be classed within the electronics industry in the widest sense, the use of organic semiconductors as functional components (=functional materials) has been reality for some time or is expected in the near future. For instance, light-sensitive organic materials (e.g. phthalocyanines) and charge transport materials on an organic basis (generally hole transporters based on triarylamine) have already found use in copying machines.
The use of specific semiconductive organic compounds, some of which are also capable of emission of light in the visible spectral region, is just starting to be introduced onto the market, for example in organic electroluminescent devices. Their individual constituents, the organic light-emitting diodes (OLEDs), have a very wide spectrum of application as:
In these applications, the development is in some parts already very far advanced, but there is nevertheless still a great need for technical improvements.
Relatively simple devices comprising OLEDs have already been introduced onto the market, as demonstrated by the car radios having organic displays from Pioneer. However, there are still considerable problems which are in need of urgent improvement:
The reasons mentioned above under 1 to 8 make improvements in the production of OLEDs very desirable.
The general structure of organic electroluminescent devices is described, for example, in U.S. Pat. No. 4,539,507 and U.S. Pat. No. 5,151,629.
Typically, an organic electroluminescent device consists of a plurality of layers which are preferably applied one on top of another by means of vacuum methods. These layers are specifically:
This whole device is appropriately (depending on the application) structured, contacted and finally also hermetically sealed, since the lifetime of such devices generally shortens drastically in the presence of water and/or air. The same also applies to inverted structures in which the light is emitted from the cathode. In inverted OLEDs, the anode consists, for example, of Al/Ni/NiOx or Al/Pt/PtOx or other metal/metal oxide compounds which have a HOMO greater than 5 eV. The cathode consists of the same materials which have been described in point 8 and 9, with the difference that the metal, for example Ca, Ba, Mg, Al, In etc., is very thin and thus transparent. The layer thickness is below 50 nm, better below 30 nm, even better below 10 nm. A further transparent material is also applied to this transparent cathode, for example ITO (indium tin oxide), IZO (indium zinc oxide), etc.
Organic electroluminescent devices in which the emission layer consists of more than one substance have already been known for a long time:
It has now been found that, surprisingly, OLEDs which correspond to the inventive design principle detailed below have distinct improvements over the prior art.
The invention therefor provides an organic electroluminescent device which has at least one emitting layer (EML) which comprises a mixture of at least one hole conductor material and at least one emission material capable of emission, characterized in that at least one of the two materials comprises one or more spiro-9,9′-bifluorene units and the weight ratio of hole conductor material to emission material is from 1:99 to 99:1, preferably from 5:95 to 80:20, more preferably from 5:95 to 25:75.
In the context of the invention, capable of emission means that the substance, as a pure film in an OLED, has an emission in the range from 380 to 750 nm.
A preferred embodiment of the present invention is an organic electroluminescent device which has at least one emitting layer (EML) which consists of a mixture of at least one hole conductor material and at least one emission material capable of emission, the HOMO of the hole conductor material lying in the range from 4.8 to 5.8 eV (vs. vacuum) and the compound having at least one substituted or unsubstituted diarylamino group, preferably at least one triarylamino unit or a carbazole moiety, and the emission material capable of emission containing one or more spiro-9,9′-bifluorene units and the weight ratio of hole conductor material to emission material being from 1:99 to 99:1, preferably from 5:95 to 80:20, more preferably from 5:95 to 25:75.
A further preferred embodiment of the present invention is an organic electroluminescent device which has at least one emitting layer (EML) which comprises a mixture of at least one hole conductor material and at least one emission material capable of emission, the HOMO of the hole conductor material lying in the range from 4.8 to 5.8 eV (vs. vacuum) and the compound containing one or more spiro-9,9′-bifluorene units and at least one moiety selected from substituted or unsubstituted diarylamino, carbazole or thiophene units, and the emission material capable of emission being selected from the group of the metal complexes, stilbenamines, stilbenarylenes, fused aromatic or heteroaromatic systems, but also the phosphorescent heavy metal complexes, rhodamines, coumarins, substituted or unsubstituted hydroxyquinolinates of aluminum, zinc, gallium, bis(p-diarylaminostyryl)-arylenes, DPVBi (4,4′-bis(2,2-diphenylvinyl)biphenyl) and analogous compounds, anthracenes, naphthacenes, pentacenes, pyrenes, perylenes, rubrene, quinacridones, benzothiadiazole compounds, DCM (4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran), DCJTB ([2-(1,1-dimethylethyl)-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene]propane-dinitrile), complexes of iridium, europium or platinum, and the weight ratio of hole conductor material to emission material being from 1:99 to 99:1, preferably from 5:95 to 80:20, more preferably from 5:95 to 25:75.
A further preferred embodiment of the present invention is an organic electroluminescent device which has at least one emitting layer (EML) which comprises a mixture of at least one hole conductor material and at least one emission material capable of emission, the HOMO of the hole conductor material lying in the range from 4.8 to 5.8 eV (vs. vacuum) and the compound containing one or more spiro-9,9′-bifluorene units and at least one moiety selected from substituted or unsubstituted diarylamino, carbazole or thiophene units, and the emission material capable of emission comprising at least one spiro-9,9′-bifluorene unit and the weight ratio of hole conductor material to emission material being from 1:99 to 99:1, preferably from 5:95 to 80:20, more preferably from 5:95 to 25:75.
The above-described devices have the following surprising advantages over the prior art:
Details of the remarks made here can be found in the examples described below.
Preferred embodiments of the inventive OLEDs are those in which the glass transition temperature Tg of the particular hole conductor compound is greater than 90° C., preferably greater than 100° C., more preferably greater than 120° C.
It is a likewise preferred embodiment when the glass transition temperature Tg of the particular emission compound is greater than 100° C., preferably greater than 120° C., more preferably greater than 130° C.
It is particularly preferred when both the described high glass transition temperature of the hole conductor and that of the emission material are present simultaneously.
The preferred embodiments, described here, of the devices, as a result of the high glass transition temperatures, have an operative and also storage lifetime which have been increased further.
In the inventive OLEDs, the layer thickness of the EML is generally selected within the range from 5 to 150 nm, preferably within the range from 10 to 100 nm, more preferably in the range from 15 to 60 nm, most preferably in the range from 20 to 40 nm.
Preferred hole conductor compounds are substituted or unsubstituted triarylamine derivatives, for example triphenylamine derivatives, but also corresponding dimeric or oligomeric compounds, i.e. compounds which contain two or more triarylamine subunits, and, as a subgroup, also corresponding carbazole derivatives, biscarbazole derivatives, or else oligocarbazole derivatives, likewise cis- or trans-indolocarbazole derivatives, additionally also thiophene, bisthiophene and oligothiophene derivatives, likewise pyrrol, bispyrrol and oligopyrrol derivatives; in selected cases, it is also possible that the triarylamino moiety is replaced by a hydrazone unit.
Particularly preferred hole conductor compounds are substituted or unsubstituted compounds of the formulae depicted below:
Aryl-A to Aryl-C represent aromatic or heteroaromatic cycles having from 4 to 40 carbon atoms.
Preferred hole conductor compounds are spiro-9,9′-bifluorene derivatives which bear from 1 to 6 substituents selected from substituted or unsubstituted diarylamino, carbazole, thiophene, bithiophene or oligothiophene moieties, but also compounds which contain, as substituents or instead of simple aryl groups, one or more substituted or unsubstituted spiro-9,9′-bifluorene derivatives. Preference is given to hole conductor materials which are present in the form of polymers and contain spiro-9,9′-bifluorene derivatives as a repeat unit, or spiro-9,9′-bifluorene derivatives whose Mw is not more than 10 000 g/mol; particular preference is given to hole conductor materials containing spiro-9,9′-bifluorene derivatives whose Mw is not more than 10 000 g/mol.
Particularly preferred hole conductor compounds are substituted or unsubstituted compounds of the formulae depicted below:
Ar1, Ar2 and AR represent here aromatic or heteroaromatic cycles having from 4 to 40 carbon atoms.
As already detailed above, preferred emission materials are metal-hydroxy-quinoline complexes, stilbenamines, stilbenarylenes, fused aromatic or heteroaromatic systems, but also phosphorescent heavy metal complexes, rhodamines, coumarins, for example substituted or unsubstituted hydroxyquinolinates of aluminum, zinc, gallium, bis(p-diarylaminostyryl)arylenes, DPVBi and analogous compounds, anthracenes, naphthacenes, pentacenes, pyrenes, perylenes, rubrene, quinacridone, benzothiadiazole compounds, DCM, DCJTB, complexes of iridium, europium or platinum.
Particularly preferred emission materials are substituted or unsubstituted compounds of the formulae depicted below:
in which
AR represents here aromatic or heteroaromatic cycles having from 4 to 40 carbon atoms; the substituents R are intended only to specify a preferred position of such groups and should not be regarded here as imposing any further restriction.
Preferred emission compounds are spiro-9,9′-bifluorene derivatives which bear from 1 to 6 substituents selected from substituted or unsubstituted arylenes, heteroarylenes, arylvinylenes or diarylvinylenes, but also arylenes, heteroarylenes or arylvinylenes which have one or more substituted or unsubstituted spiro-9,9′-bifluorene derivatives as substituents.
Particularly preferred emission compounds are substituted or unsubstituted compounds of the formulae depicted below:
AR, Ar1, Ar2 and Ar3 represent here aromatic or heteroaromatic cycles having from 4 to 40 carbon atoms; n corresponds to 0, 1 or 2; m corresponds to 1 or 2, o corresponds to 1, 2, 3, 4, 5 or 6; the substituents R are only intended to specify a preferred position of such groups and should not be regarded here as imposing any further restriction. The Z radicals in formula (I) may be present multiply on one aromatic ring.
The compounds of the formula (I) are novel.
The invention therefore further provides compounds of the formula (I),
in which Z represents one or more groups of the formula
and in which the symbols and indices used are:
Inventive electroluminescent devices may be prepared, for example, as follows:
As described above, the production of the inventive devices may be carried out, apart from by sublimations processes or OPVD processes, also by specific printing processes (such as the LITI mentioned). This has advantages both with regard to the scaleability of the manufacturing and with regard to the establishment of mixing ratios in blend layers used. For this purpose, it is, though, generally necessary to prepare corresponding layers (for LITI: transfer layers) which are then transferred to the actual substrate.
These layers then comprise (in addition to any assistants needed, which are required for the transfer step) the mixture of hole conductor material and emitter material, as described above, in the desired ratio. These layers also form part of the subject matter of the present invention, as does the use of these layers to produce inventive devices.
The preparation of the inventive devices may also be carried out by other printing processes, for example the inkjet printing process.
The present application text and also the examples which follow below are directed only to organic light-emitting diodes and the corresponding displays. In spite of this restriction of the description, it is possible for those skilled in the art, without any further inventive activity, to produce and employ corresponding inventive layers, for example for organic solar cells (O-SCs), organic field-effect transistors (O-FETs) or else organic laser diodes (O-lasers), to name just a few further applications.
The present invention is illustrated in detail by the examples which follow without any intention that it be restricted thereto. Those skilled in the art can produce further inventive devices from the description and the adduced examples without inventive activity.
The examples listed below had the following layer structure:
glass/ITO (80 nm)/HIL (60 nm)/HTL 1 (20 nm)/HTL 2 (20 nm)/EML (20-40 nm)/ETL (10-20 nm)/metal 1 (5 nm)/metal 2 (150 nm). Examples 10 and 11 additionally contained a blocking layer for holes (HBL) between EML and ETL. This resulted in the following layer structure for these examples: glass/ITO (80 nm)/HIL (60 nm)/HTL 1 (20 nm)/HTL 2 (20 nm)/EML (20-40 nm)/HBL (5-10 nm)/ETL (10-20 nm)/metal 1 (5-10 nm)/metal 2 (150 nm).
The organic materials (HTL 1/HTL 2/EMU(HBL)/ETL) were applied by vapor deposition one after the other in a vapor deposition apparatus from Pfeiffer-Vakuum, adapted by Covion, at a pressure of <10−6 mbar. The unit was equipped with an automatic rate and layer thickness control. The unmixed EML layers which were produced as a reference, just like HTL 1, HTL 2, ETL and HBL, were applied by vapor deposition in the Pfeiffer vapor deposition apparatus at a pressure of <10−6 mbar. In the case of the mixed EML layers (mixtures of two different materials), two materials were applied by vapor deposition simultaneously. The concentrations described in the examples were achieved by adjusting the rates according to the mixing ratios. The metals (metal 1/metal 2) were applied by vapor deposition in a vapor deposition apparatus from Balzers, adapted by Covion, at a pressure of <10−6 mbar. The unit was likewise equipped with an automatic rate and layer thickness control.
The substances, listed in the examples, of the mixtures are shown once more after the examples.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-DPVBi (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-DPVBi+spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-DPVBi+spiro-TAD), spiro-TAD having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED increased by a factor of 3 in comparison to the reference OLED from approx. 1500 h to 4500 h. At the same time, the photometric efficiency (unit: cd/A) was improved by approx. 10% and the power efficiency was likewise increased. When a mixture of spiro-TAD and spiro-DPVBi with a concentration of 15% of spiro-DPVBi was prepared, the lifetime increased by a factor of 4 from approx. 1500 h to 6000 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 4.5 V instead of 5.5 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-DPVBi (+spiro-AA2)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-DPVBi and spiro-AA2) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-DPVBi and spiro-AA2), spiro-AA2 having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-AA2 in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of >8 in comparison to the reference OLED from approx. 1500 h to >12 000 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 4.5 V instead of 5.5 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-Ant1 (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-Ant1 and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-Ant1 and spiro-TAD), spiro-TAD having had a proportion of 50%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of >100 in comparison to the reference OLED from approx. 100 h to >10 000 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 4.5 V instead of 6 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-Ant2 (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-Ant2 and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-Ant2 and spiro-TAD), spiro-TAD having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of >3 in comparison to the reference OLED from approx. 300 h to >900 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 5.5 V instead of 6.5 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-pyrene (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-pyrene and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-pyrene and spiro-TAD), spiro-TAD having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 3 in comparison to the reference OLED from approx. 1500 h to 4500 h. At the same time, the photometric efficiency (unit: cd/A) was improved by up to 20%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 4.5 V instead of 5.5 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=TBPP (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances TBPP and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (TBPP and spiro-TAD), spiro-TAD having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 10 in comparison to the reference OLED from approx. 500 h to 5000 h. At the same time, the photometric efficiency (unit: cd/A) was improved by up to 100%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 6 V instead of 7 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=DTBTD (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances DTBTD and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (DTBTD and spiro-TAD), spiro-TAD having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 8 in comparison to the reference OLED from approx. 500 h to 4000 h.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=BDPBTD (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances BDPBTD and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (BDPBTD and spiro-TAD), spiro-TAD having had a proportion of 90%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of >10 in comparison to the reference OLED from approx. 1000 h to >10 000 h. At the same time, the photometric efficiency (unit: cd/A) was improved by up to 100%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 5 V instead of 8 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=BDTBTD (+spiro-TAD)/AlQ3/Ba/Ag. The two materials of the EML (the substances BDTBTD and spiro-TAD) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (BDTBTD and spiro-TAD), spiro-TAD having had a proportion of 90%. In addition, OLEDs were produced as a reference without the substance spiro-TAD in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 10 in comparison to the reference OLED from approx. 1000 h to 10 000 h. At the same time, the photometric efficiency (unit: cd/A) was improved by up to 400%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 6 V instead of 9 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above with inclusion of the HBL: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=IrPPy (+spiro-carbazole)/BCP/AlQ3/Ba/Ag. IrPPy was synthesized by Covion, and spiro-Carbazole was developed and synthesized by Covion. The EML consisted of a mixture of the two substances (IrPPy and spiro-carbazole), spiro-carbazole having had a proportion of 90%. In addition, OLEDs were produced as a reference without the substance spiro-carbazole in the EML. The photometric efficiency (unit: cd/A) was improved by up to 500%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 6 V instead of 9 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above with inclusion of the HBL: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=IrPPy (+spiro-4PP6)/BCP/AlQ3/Ba/Ag. IrPPy was synthesized by Covion, and spiro-4PP6 was developed and synthesized by Covion. The EML consisted of a mixture of the two substances (IrPPy and spiro-4PP6), spiro-4PP6 having had a proportion of 90%. In addition, OLEDs were produced as a reference without the substance spiro-4PP6 in the EML. The photometric efficiency (unit: cd/A) was improved by up to 400%, and the power efficiency was likewise increased. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 5.5 V instead of 9 V for a brightness of 100 cd/m2.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-Ant2 (+CPB)/AlQ3/Ba/Ag. The two materials of the EML (the substances spiro-Ant2 and CPB) were developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-Ant2 and CPB), CPB having had a proportion of 20%. In addition, OLEDs were produced as a reference without the substance CPB in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 6 in comparison to the reference OLED from approx. 300 h to >1800 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 6 V instead of 7 V for a brightness of 100 cd/m2. In addition, the color coordinates improved: in the case of the reference OLED, CIE values of x=0.15 and y=0.15 were obtained; with a proportion of 20% CPB, x=0.15 and y=0.12 were achieved.
The layer structure corresponded to that described above: glass/ITO/PEDOT/NaphDATA/spiro-TAD/EML=spiro-pyrene (+CPB)/AlQ3/Ba/Ag. CPB was synthesized by Covion, and spiro-pyrene was developed and synthesized by Covion. The EML consisted of a mixture of the two substances (spiro-pyrene and CPB), CPB having had a proportion of 10%. In addition, OLEDs were produced as a reference without the substance CPB in the EML. In the case of the mixture in the EML, the lifetime of the OLED was increased by a factor of 6 in comparison to the reference OLED from approx. 300 h to >1800 h. In addition, steeper characteristic I-U-EL lines were obtained, i.e. in order to achieve a certain brightness, lower voltages were required, for example only 6 V instead of 7 V for a brightness of 100 cd/m2. In addition, the color coordinates improved: in the case of the reference OLED, CIE values of x=0.15 and y=0.20 were obtained; with a proportion of 10% CPB, x=0.15 and y=0.17 were achieved.
For better clarity, the substances mentioned in the examples adduced above are listed once more below:
Number | Date | Country | Kind |
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102 61 545.4 | Dec 2002 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP03/13927 | 12/9/2003 | WO | 7/21/2005 |