Patent Grant
9458544
1. Technical Field
The present disclosure relates to an organic hydride conversion device. In particular, the present disclosure relates to an organic hydride conversion device comprising a proton conductor.
2. Description of the Related Art
Among proton conducting solid electrolytes, many perovskite proton conducting oxides have been reported which are expressed by the compositional formula AB1-xB′xO3-x. Herein, A is an alkaline-earth metal; B is a tetravalent group 4 transition metal element, or Ce, which is a tetravalent lanthanoid element; B′ is a trivalent group 3 or group 13 element; and O is oxygen. x is a mole fraction of the B′ element with which the B element is substituted, satisfying 0<x<1.0. δ is a value representing oxygen deficiencies or oxygen excesses. The fundamental construction of a perovskite structure will later be briefly described with reference to the drawings.
Nature materials Vol 9 (October 2010) 846-852 discloses oxides of a perovskite structure. The oxides described in Nature materials Vol 9 (October 2010) 846-852 have the compositional formula BaZr1-xYxO3-x or the compositional formula BaCe1-xYxO3-x. In these oxides, A is barium (Ba); B is Zr or Ce; and B′ is Y.
Japanese Laid-Open Patent Publication No. 2008-23404 discloses a proton conducting film of a perovskite structure. The proton conducting film described in Japanese Laid-Open Patent Publication No. 2008-23404 has the chemical formula Al1-XMXO3-X. A is an alkaline-earth metal. L is one or more kinds of elements selected from cerium, titanium, zirconium, and hafnium. M is one or more kinds of elements selected from neodymium, gallium, aluminum, yttrium, indium, ytterbium, scandium, gadolinium, samarium, and praseodymium. Herein, X is the mole fraction of an M element with which the L element is substituted, where a is an atomic ratio of oxygen deficiencies. In the proton conducting film described in Japanese Laid-Open Patent Publication No. 2008-23404, 0.05<X<0.35, and 0.15<α<1.00.
A solid polymer membrane having proton conductivity is also known. Japanese Patent Application laid-open Publication No. 2003-045449A discloses a chemical electric power generation device (i.e., a fuel cell) which produces an electric power with such a solid polymer membrane using an organic hydride as a fuel. In the chemical electric power generation device disclosed in Japanese Patent Application laid-open Publication No. 2003-045449A, the organic hydride supplied as a fuel is dehydrogenated to give a dehydrogenation product. Japanese Patent Application laid-open Publication No. 2003-045449A also discloses an organic hydride fabrication device comprising the solid polymer membrane. In the organic hydride fabrication device disclosed in Japanese Patent Application laid-open Publication No. 2003-045449A, a dehydrogenated compound is hydrogenated to give an organic hydride. In the technique disclosed in Japanese Patent Application laid-open Publication No. 2003-045449A, protons are transferred electrochemically from one container to another container, both of which are separated from each other with a partition wall.
The present disclosure provides a practical organic hydride conversion device.
In one general aspect, an organic hydride conversion device disclosed herein comprises an anode including a dehydrogenation catalyst, a cathode including a hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode, wherein the proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB′xO3-x, where A is at least one selected from among alkaline-earth metals; B is a tetravalent group 4 transition metal or Ce; B′ is a trivalent group 3 or group 13 element; and 0.4<a<0.9 and 0.2<x<0.6 are satisfied.
According to a non-limiting, illustrative embodiment of present disclosure, a practical organic hydride conversion device is provided.
Additional benefits and advantages of the disclosed embodiments will be apparent from the specification and Figures. The benefits and/or advantages may be individually provided by the various embodiments and features of the specification and drawings disclosure, and need not all be provided in order to obtain one or more of the same.
Benzene, toluene, biphenyl, naphthalene, 1-methylnaphthalene, and 2-ethylnaphthalene, which are aromatic hydrocarbon compounds, are hydrogenated to give cyclohexane, methyl cyclohexane, bicyclohexyl, decalin, 1-methyl-decalin, and 2-ethyl-decalin, respectively. In the present specification, an organic compound having a C═C double bond which is to be converted into a C—C single bond by adding hydrogen thereto is referred to as “dehydrogenation compound”. The term “dehydrogenation compound” also includes an organic compound having a C≡C triple bond to be converted into a C—C single bond or a C═C double bond by adding hydrogen. The term “dehydrogenation compound” also includes an organic compound having a C═N double bond to be converted into a C—N single bond by adding hydrogen. By using such a dehydrogenation compound (e.g., benzene), hydrogen is stored in the form of a hydride (e.g., cyclohexane). In addition, acetone is hydrogenated to give 2-propanol. Accordingly, it is possible to store hydrogen in the form of 2-propanol using acetone. In the present specification, a hydride (e.g. cyclohexane or 2-propanol) given through hydrogenation of the above-exemplified organic compounds such as benzene or acetone is referred to as an organic hydride. On the other hand, an example of the dehydrogenation compound is benzene or acetone.
The organic hydride exemplified above as cyclohexane, methyl cyclohexane, bicyclohexyl, decalin, 1-methyl-decalin, and 2-ethyl-decalin has high weight hydrogen content rate and volume hydrogen content rate. The organic hydride is currently the only hydrogen storage material having a higher hydrogen storage performance value than a hydrogen storage performance value established by the American Automobile Association.
(Dehydrogenation and Hydrogenation of Organic Hydride)
The present inventors considered a structure of a device capable of not only dehydrogenating an organic hydride (e.g., methylcyclohexane) but also hydrogenating another organic hydride (e.g., naphthalene) in parallel using the hydrogen generated in the dehydrogenation. The present inventors believed that another organic hydride can be obtained from an organic hydride using such a device. In other words, the present inventors believed that an organic hydride can be converted into another organic hydride using such a device. The present inventors found the following problems in the process of the consideration.
Known is a method for dehydrogenating an organic hydride by heating the organic hydride in the presence of a catalyst such as platinum under a temperature of approximately 300 degrees Celsius. According to this method, hydrogen is extracted from the organic hydride. An organic hydride can be synthesized by adding hydrogen to the dehydrogenation product (e.g., benzene, toluene, biphenyl, naphthalene, 1-methylnaphthalene, or 2-ethylnaphthalene) of the organic hydride. Known is a method for hydrogenating the dehydrogenation product of the organic hydride such as benzene or toluene by heating the dehydrogenation product of the organic hydride in the presence of a catalyst such as nickel (Ni) or platinum (Pt) under a pressure of ordinary pressure to approximately 10 atmospheres. Hydrogen can be stored in the form of the organic hydride through the hydrogenation of benzene or toluene.
Typically, the condition suitable for the dehydrogenation of the organic hydride depends on the kind of the organic hydride to be used. Similarly, the condition suitable for the hydrogenation for obtaining the organic hydride also depends on the kind of the dehydrogenation compound to be used (e.g., an aromatic hydrocarbon compound). For this reason, when the dehydrogenation compound is hydrogenated using hydrogen generated through the dehydrogenation of the organic hydride, typically, it is necessary to extract hydrogen generated through the dehydrogenation in the form of a hydrogen gas. In other words, it is necessary to generate the hydrogen gas from the organic hydride, and to hydrogenate the dehydrogenation compound in the presence of a catalyst using the hydrogen gas. As just described, since it is necessary to use hydrogen in the form of a gas, the temperature and the pressure in the hydrogenation of the dehydrogenation compound must be adjusted appropriately.
The present inventors also considered a device having a partition wall composed of a hydrogen permeable material such as palladium (Pd). For example, a catalyst including Ni, Pt, or Pd is disposed on one principal surface of the partition wall composed of the hydrogen permeable material (i.e., a principal surface on the dehydrogenation side), whereas a catalyst including Pt or Pd is disposed on another principal surface of the partition wall (i.e., a principal surface on the hydrogenation side). The organic hydride is supplied so as to be brought into contact with the principal surface on the dehydrogenation side, and the dehydrogenation compound is supplied so as to be brought into contact with the principal surface on the hydrogenation side that is separated with the hydrogen permeable material. In this way, hydrogen generated through the dehydrogenation of the organic hydride travels through the hydrogen permeable material to reach the principal surface on the hydrogenation side. The present inventors believe that the dehydrogenation compound is hydrogenated in this way.
However, in such a device, the conversion speed between the organic hydrides significantly depends on the speed of the hydrogen travelling through the hydrogen permeable material. The present inventors believe that the speed of the hydrogen travelling through the hydrogen permeable material significantly depends on the hydrogen concentration difference between the organic hydride supply side and the dehydrogenation compound supply side, however, the conversion speed between the organic hydrides is relatively slow.
The present inventors considered converting the organic hydride into another organic hydride using a proton conductive solid electrolyte instead of the hydrogen permeable material. The solid electrolyte having proton conductivity allows protons (H+) to be transferred electrochemically through the electrolyte without generating a hydrogen gas.
A proton conductive solid polymer membrane composed of a perfluoro material is known as a proton conductive solid electrolyte. The proton conductive solid polymer membrane is conventionally used in a solid polymer electrolyte fuel cell. However, the polymer included in the polymer membrane is vitrified in the temperature range in which the dehydrogenation and the hydrogenation occur in parallel quickly (200 degrees Celsius-300 degrees Celsius). As a result, the proton conductivity is lowered significantly. In addition, in order to maintain the proton conductivity, it is necessary to maintain the solid polymer membrane in the wet condition when in operation. For this reason, water has to be supplied to the solid polymer membrane from either of the dehydrogenation side or the hydrogenation side. As a result, the organic hydride and/or the dehydrogenation product may contain water in the dehydrogenation side, or the dehydrogenation compound and/or the organic hydride may contain water in the hydrogenation side. For this reason, it is not realistic to use the solid polymer membrane.
Not only the solid polymer membrane but also a perovskite proton conducting oxide is known as an electrolyte having proton conductivity. However, typically, the perovskite proton conducting oxide exhibits practical proton conductivity under a temperature of not less than 600 degrees Celsius. For this reason, in a case where the perovskite proton conducting oxide is used as a proton conductive solid electrolyte, the perovskite proton conducting oxide has to be heated to a high temperature of not less than 600 degrees Celsius in operation. Under such a high temperature, the organic hydride and/or the dehydrogenation product at the dehydrogenation side may be deformed, or the dehydrogenation compound and/or the organic hydride at the hydrogenation side may be deformed. In addition, in such a device, a heater is required, and a range of choice of the members which constitute a device for obtaining a leaky hydrogen gas is narrowed.
For the above reason, a practical organic hydride conversion device operable in the temperature range of not less than 100 degrees Celsius and not more than 300 degrees Celsius has been required.
As a result of earnest studies, the present inventors found a proton conducting oxide capable of maintaining high proton conductivity even in the temperature range of not less than 100 degrees Celsius and not more than 500 degrees Celsius and provided an organic hydride conversion device comprising the proton conducting oxide as an electrolyte.
One general aspect of the present invention will be described below.
In one general aspect, a practical organic hydride conversion device disclosed herein comprises an anode including a dehydrogenation catalyst, a cathode including a hydrogenation catalyst, and a proton conductor disposed between the anode and the cathode, wherein the proton conductor has a perovskite crystal structure expressed by the compositional formula AaB1-xB′xO3-x, where A is at least one selected from among alkaline-earth metals; B is a tetravalent group 4 transition metal or Ce; and B′ is a trivalent group 3 or group 13 element, where 0.4<a<0.9 and 0.2<x<0.6 are satisfied.
A may be at least one selected from among Ba and Sr. B may be Zr. B′ may be Y or In.
The value of a may be more than 0.4 and less than 0.8. The value of x may be more than 0.3 and less than 0.6.
The value of a may be more than 0.4 and less than 0.8. The value of x may be more than 0.4 and less than 0.6.
The value of a may be more than 0.4 and less than 0.6. The value of x may be more than 0.4 and less than 0.6.
The value of a may be more than 0.4 and less than 0.5. The value of x may be more than 0.4 and less than 0.6.
An activation energy of proton conduction of the proton conductor in a temperature range of not less than 100 degrees Celsius and not more than 500 degrees Celsius may be 0.1 eV or less.
The relationship 0.21≦x≦0.58, a≧−0.054x+0.441, and a≦−0.027x+0.886 may be satisfied.
The proton conductor may be composed of a single phase which is substantially uniform in composition and crystal structure.
The dehydrogenation catalyst may be a metal including at least one selected from the group consisting of Ni, Pt, Pd, and an alloy thereof.
The dehydrogenation catalyst may be an oxide including at least one selected from the group consisting of Ni, Pt, and Pd.
The anode may include a support. The support may be formed of Al2O3, SiO2, or ZrO2. The dehydrogenation catalyst may be a metal including at least one selected from the group consisting of Ni, Pt, Pd, and an alloy thereof. The dehydrogenation catalyst may be supported on the surface of the support.
The hydrogenation catalyst may be a metal including at least one selected from the group consisting of Ni, Pt, Pd, Rh, and an alloy thereof.
The hydrogenation catalyst may be an oxide including at least one selected from the group consisting of Ni, Pt, Pd, and Rh.
The hydrogenation catalyst may be a cermet containing an oxide including at least one selected from the group consisting of Ni, Pt, Pd, and Rh.
The hydrogenation catalyst may be an oxide having a perovskite crystal structure expressed by the compositional formula CDO3-δ. C may include at least one selected from the group consisting of Ba, Sr, Ca, La, and Sm. D may include Ru and at least one selected from the group consisting of Zr and Ce, or may include at least one selected from the group consisting of Ni, Fe, Co, and Mn.
The hydrogenation catalyst may be an oxide having a K2NiF4 crystal structure expressed by the compositional formula La2-wSrwNiO4-δ. 0≦w≦0.5 may be satisfied.
The hydrogenation catalyst may be an oxide having a perovskite crystal structure expressed by the compositional formula EF1-zF′zO3-δ. E may include at least one selected from the group consisting of Ba, Sr, and Ca. F may include Ru and at least one selected from the group consisting of Zr and Ce. F′ may be Y, In, or a trivalent lanthanoid element. 0.10<z<0.80 may be satisfied.
Before the embodiments of the organic hydride conversion device according to the present disclosure are described, the proton conducting oxide used for the organic hydride conversion device will be described. The proton conducting oxide described below is a perovskite proton conductor having a perovskite structure. The proton conducting oxide has high proton conductivity even in the temperature range of not less than 100 degrees Celsius and not more than 500 degrees Celsius.
(Perovskite Structure)
First, a basic structure of the perovskite structure will be briefly described with reference to
The above structure is the basic structure of a perovskite crystal, in which some of elements A, B, and O may be deficient, excessive, or substituted by other elements. For example, a crystal in which element B′ other than element B is located at the B site is a perovskite crystal which is expressed by the compositional formula AB(1-x)B′xO3. Herein, x is a mole fraction of B′, which may be referred to as the substitution ratio. When such substitution, deficiency, or excess of elements occurs, the structure of the unit lattice may distorted or deformed from being a cube. The perovskite crystal is not limited to “cubic”, but broadly encompasses any crystal which has undergone a phase transition into the less-symmetric “rhombic” or “tetragonal”.
(Findings of the Inventors)
In a conventional proton conducting oxide having a perovskite structure, substituting a tetravalent element B with a trivalent element B′ causes oxygen deficiencies in the proton conducting oxide. This is considered because, when some of the tetravalent cations are substituted with trivalent cations, the total positive charge possessed by the cations decreases so that the mole fraction of oxygen ions, which are divalent anions, decreases due to a charge compensation action towards maintaining electrical neutrality, thereby causing oxygen deficiencies. In a proton conducting oxide having such a composition, it is considered that carriers of proton conduction are introduced into the proton conducting oxide as water molecules (H2O) are introduced at the positions (O sites) of oxygen deficiencies.
Conventional proton conducting oxides are considered to exhibit proton conductivity because protons undergo hopping conduction around the oxygen atoms. In this case, temperature dependence of proton conductivity manifests itself in a thermal-activation profile, with an activation energy on the order of 0.4 to 1.0 eV. Therefore, proton conductivity undergoes an exponential decrease with decreasing temperature.
In order for the proton conducting oxide to maintain a high proton conductivity of 10−1 S/cm (Siemens/centimeter) or more even in the temperature region of not less than 100° C. and not more than 500° C., it is beneficial to ensure that the activation energy concerning proton conductivity is 0.1 eV or less, thereby suppressing any decrease in proton conductivity that is caused by decreasing temperature.
The inventors have tried to create a situation where protons can move more easily than via conventional hopping by increasing the solid solution amount (amount of substitution) of the trivalent element B′ so as to increase the concentration or density of proton carriers. However, in a conventional perovskite proton conducting oxide, the upper limit of the mole fraction of the B′ element is about 0.2, which presents an upper limit to the amount of oxygen deficiencies.
As a method of introducing more proton carriers, the inventors have noticed the possibility of obtaining similar effects to increasing the mole fraction of the B′ element by decreasing the mole fraction of the A element. However, as is described in Solid State Ionics 110 (1998) 103-110, proton conductivity will decrease if the mole fraction a of the A element becomes smaller than 1. The presumable reason is that a component lacking proton conductivity (heterophase: a phase not having the perovskite crystal structure) is created within the texture.
Accordingly, the inventors have found that, in a realm of chemical compositions where the mole fraction a of the A element is decreased to below 1, which is conventionally considered unsuitable for proton conduction, increasing the mole fraction x of the B′ element to be higher than the conventional 0.2 unexpectedly allows to lower the activation energy while maintaining a single-phase perovskite structure. As a result of this, a perovskite proton conducting oxide having high proton conductivity was obtained.
(Proton Conducting Oxide)
Hereinafter, the proton conducting oxide used for the organic hydride conversion device according to an embodiment of the present disclosure will be described.
The proton conducting oxide used for the organic hydride conversion device according to the embodiment of the present disclosure is a metal oxide having a perovskite crystal structure expressed by the compositional formula AaB1-xB′xO3-x. The A element is an alkaline-earth metal. The value a representing the mole fraction of the A element, which is a ratio of the number of atoms of the A element when assuming that a sum of B and B′ is 1, is in the range of 0.4<a<0.9. The B′ element is a trivalent group 3 or group 13 element. The value x, which represents the mole fraction of the B element, is in the range of 0.2<x<0.6. The mole fraction will be described in detail in the Examples described later. Note that, as described above, δ denotes oxygen deficiencies or oxygen excesses. Although the δ value has not been measured in the Examples below, it is considered that oxygen deficiencies exist so that the relationship of 0<δ<3.0 is satisfied.
<A Element>
An example of the A element is an alkaline-earth metal. The perovskite structure is stable. Typical examples of the A element are at least one or more kinds of elements selected from among barium (Ba), strontium (Sr), calcium (Ca), and magnesium (Mg). For example, proton conducting oxides whose A element is at least one kind selected from among barium (Ba) and strontium (Sr) can have high proton conductivity. Moreover, the A element may at least contain barium (Ba) and additionally at least one or more kinds of elements selected from among strontium (Sr), calcium (Ca), and magnesium (Mg). For example, the A element is BayA′1-y(0<y≦1).
The A element may be a divalent alkaline-earth metal element, in which case similar effects to increasing the mole fraction of the B′ element can be obtained by decreasing the mole fraction of the A element, thus making oxygen deficiencies likely to occur; thus, an effect of enhancing the proton carrier concentration is obtained.
<B Element>
Examples of the B element are group 4 elements. Typical examples of the B element are zirconium (Zr), cerium (Ce), titanium (Ti), and hafnium (Hf). When the B element is zirconium (Zr), the perovskite structure will become stable, thus resulting in less production of any structural components not possessing proton conductivity. This is beneficial because a proton conducting oxide having high proton conductivity will be obtained.
When the B element is zirconium (Zr), titanium (Ti), or hafnium (Hf), which belong to group 4 and are tetravalent, or cerium (Ce), the perovskite structure will become stable, thus resulting in less production of any structural components not possessing proton conductivity, whereby high proton conductivity is obtained.
<B′ Element>
The B′ element is a group 3 element, a group 13 element, or a trivalent lanthanoid. For example, the B′ element may be a group 3 element, a group 13 element, or a trivalent lanthanoid having an ion radius greater than 0.5 Å and smaller than 1.02 Å. As a result, even if the x value is greater than 0.2, a proton conducting oxide having high proton conductivity is obtained whose perovskite structure is maintained stable. It is more beneficial that a proton conducting oxide whose B′ element is yttrium (Y) or indium (In) because its perovskite structure is stable and it has a high proton conductivity.
When the B′ element is a trivalent group 3 element, a trivalent group 13 element, or a trivalent lanthanoid, such that the element has an ion radius value greater than 0.5 Å and smaller than 1.02 Å, oxygen deficiencies are likely to occur while maintaining a stable perovskite structure, and an effect of enhancing the proton carrier concentration is obtained, even if the x value is greater than 0.2.
(a, x, and δ)
The value a, which represents the mole fraction of the A element is in the range of 0.4<a<0.9. Oxides whose a value is smaller than 0.4 are not desirable because the perovskite structure will be unstable, and a phase not possessing proton conductivity will occur in the proton conducting oxide.
The x value representing the mole fraction of the B′ element is in the range of 0.2<x<0.6. Oxides whose a value is greater than 0.6 are not desirable because the perovskite structure will be unstable and a phase not possessing proton conductivity will occur.
Oxides such that 0.9≦a<1.1 and 0≦x≦0.2 are not desirable because the activation energy will be 0.1 eV or greater, thus resulting in a lower proton conductivity in a temperature range of not less than 100° C. and not more than 500° C.
Oxides such that 0.9≦a<1.1 and 0.2<x<0.6 are not desirable because a phase not possessing proton conductivity will occur.
Oxides such that a>1.1 are not desirable because the perovskite structure will be unstable and the proton conductivity will be lowered.
Therefore, it is beneficial that 0.4<a<0.9 and 0.2<x<0.6 are satisfied because, in such proton conducting oxides, a stable perovskite structure will be obtained, and the proton conductivity will be 10−1 S/cm or more. Oxides such that 0.4<a<0.9 and 0.0≦x≦0.2 are not desirable because, although having a perovskite structure, their proton conductivity will be less than 10−1 S/cm.
Furthermore, it is more beneficial that 0.4<a<0.8 and 0.3<x<0.6 are satisfied because, in such proton conducting oxides, they possess higher proton conductivity at 500° C. Furthermore, it is more beneficial that 0.4<a<0.8 and 0.4<x<0.6 are satisfied because, in such proton conducting oxides, they have high proton conductivity even at 100° C.
A is a divalent element; B is a tetravalent element; and B′ is a trivalent element. O is divalent. Therefore, when the electrical neutrality condition is satisfied, it is considered that a sum of the amount of A deficiencies and a half amount of the amount of B′ substitution defines the amount of oxygen deficiencies. In other words, since the amount of A deficiencies is 1-a, the amount of B′ substitution is x, and the amount of oxygen deficiencies is δ per unit cell of the crystal, δ=(1−a)+x/2 holds when assuming that ions of these elements satisfy the electrical neutrality condition. Therefore, when 0.4<a<0.9 and 0.2<x<0.6 are satisfied, 0.2<δ<0.9 is satisfied.
By adjusting the values of a and x to the above-mentioned ranges (a expresses a composition ratio of the element A and x expresses a composition ratio of the element B′), a proton conductor is realized which has a single-crystalline or polycrystalline perovskite structure composed of a single phase that is substantially uniform (homogeneous) in composition and crystal structure. Herein, being “composed of a single phase which is substantially uniform in composition and crystal structure” means that the proton conductor does not contain any heterophase that has a composition outside the ranges of the present invention. Note that embodiments of the proton conductor of the present disclosure may contain minute amounts of unavoidable impurities. In the case where the proton conductor of the present disclosure is produced by sintering, compounds or elements of sintering aids or the like may be partially contained. Otherwise, in the course of the production process, impurities may be added unintentionally, or intentionally for certain effects. What is important is that the respective elements of A, B, B′, and O are within the ranges defined by the present disclosure, these constituting a perovskite crystal structure. Therefore, impurities which might stray in during production may be contained.
(Production Method)
The proton conducting oxide can be formed by film formation methods such as a sputtering technique, a pulsed laser deposition technique (PLD technique), or a chemical vapor deposition technique (CVD technique). There is no particular limitation as to the film forming method.
(Others)
Proton conducting oxides will also be referred to as proton conductors. An example shape of a proton conducting oxide is a film. A proton conducting oxide does not need to be a continuous film so long as it functions as a proton conducting solid electrolyte.
Moreover, the base substrate on which a film of proton conducting oxide is formed does not need to be flat. When supplying reactants (e.g., hydrogen, oxygen), it is beneficial that there is no leakage of supplied substances in order to prevent the supplied substances from directly reacting via the perovskite proton conducting oxide as a solid electrolyte. Therefore, a thin film of perovskite proton conducting oxide is formed on a base substrate having a smooth plane which is composed of magnesium oxide (MgO), strontium titanate (SrTiO3), silicon (Si), or the like. Thereafter, for example, a part or a whole of the base substrate is removed by using etching or the like, thereby arriving at a proton conducting solid electrolyte. There is no particular limitation as to the material and shape of the base substrate.
The crystal structure of the proton conducting oxide may be single-crystalline or polycrystalline. A proton conducting oxide having oriented texture by controlling the orientation of crystal growth on a substrate of magnesium oxide (MgO) or strontium titanate (SrTiO3), or on a silicon (Si) substrate having a buffer layer with a controlled lattice constant formed thereon, can have a higher proton conductivity. A proton conducting oxide having single-crystalline texture which is epitaxially grown on a substrate can have a higher proton conductivity. For example, single-crystalline texture can be obtained by controlling the film-formation conditions such as the surface orientation of the substrate, temperature, pressure, and the atmosphere. There is no particular limitation as to the conditions of thin film formation and the crystal system of the thin film.
Hereinafter, the proton conducting oxide will be specifically described by way of Examples.
A base substrate (10 mm×10 mm, thickness 0.5 mm) was set on a substrate holder within a vacuum chamber, the substrate holder having a heating mechanism, and the inside of the vacuum chamber was evacuated to a degree of vacuum of about 10−3 Pa. The material of the base substrate was single-crystalline magnesium oxide (MgO).
After the evacuation, the base substrate was heated at 650° C. to 750° C. An oxygen gas (flow rate: 2 sccm) and an argon gas (flow rate: 8 sccm) were introduced, and the pressure inside the vacuum chamber was adjusted to about 1 Pa.
By using a sintered target having an element ratio of Ba:Zr:Y=7:7:3, a proton conducting oxide was formed into a film by a sputtering technique.
The structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide were evaluated. Results are shown in Table 1 and Table 2. Hereinafter, the respective evaluation methods and the results thereof will be described. Table 1 and Table 2 also show Examples 2 to 13 and Comparative Examples 1 to 5, which will be described later.
By using a Cu target, X-ray diffraction of the resultant film of proton conducting oxide was measured. As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 1 had a perovskite crystal structure and was single-crystalline.
By using inductively coupled plasma spectroscopy (ICP), the mole fractions in the resultant film of proton conducting oxide were examined. As shown in Table 1 and Table 2, in the proton conducting oxide (AaB1-xβ′xO3-x) of Example 1, the A element was barium (Ba) and the a value was 0.73. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.31 (Zr:0.69, Y:0.31).
As shown in Table 1 and Table 2, Example 1 had a proton conductivity of 0.36 S/cm at 100° C., and a proton conductivity of 0.71 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=1:1:1. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 2 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.48. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.48 (Zr:0.52, Y:0.48). As shown in Table 1, Example 2 had a proton conductivity of 0.42 S/cm at 100° C., and a proton conductivity of 0.79 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=9:4:6. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 3 had a perovskite crystal structure and was polycrystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.89. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.58 (Zr:0.42, Y:0.58). As shown in Table 1, Example 3 had a proton conductivity of 0.14 S/cm at 100° C., and a proton conductivity of 0.55 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:In=5:8:2. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 4 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xβ′xO3-x), the A element was barium (Ba), and the a value was 0.44. Moreover, the B element was zirconium (Zr); the B′ element was indium (In); and the x value was 0.22 (Zr:0.78, In:0.22). As shown in Table 1, Example 4 had a proton conductivity of 0.32 S/cm at 100° C., and a proton conductivity of 0.57 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=8:6:4. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 5 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.71. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.41 (Zr:0.59, Y:0.41). As shown in Table 1, Example 5 had a proton conductivity of 0.39 S/cm at 100° C., and a proton conductivity of 0.79 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that the material of the base substrate was single-crystalline strontium titanate (SrTiO3), and that the film was formed by using a sintered target having an element ratio of Ba:Sr:Zr:Y=3:4:7:3. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 6 had a perovskite crystal structure and was polycrystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-δ), the A element was barium (Ba) and strontium (Sr). The barium (Ba) and strontium (Sr) had a ratio such that barium (Ba) was 0.22 and strontium (Sr) was 0.49, and the a value was 0.71. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.27 (Zr:0.73, Y:0.27). As shown in Table 1, Example 6 had a proton conductivity of 0.35 S/cm at 100° C., and a proton conductivity of 0.66 S/cm at 500° C.
An experiment was conducted similarly to Example 6 except that a film was formed by using a sintered target having an element ratio of Ba:Sr:Zr:Y=1:1:2:2. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 7 had a perovskite crystal structure and was polycrystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba) and strontium (Sr). The barium (Ba) and strontium (Sr) had a ratio such that barium (Ba) was 0.22 and strontium (Sr) was 0.25, and the a value was 0.47. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.47 (Zr:0.53, Y:0.47). As shown in Table 1 and Table 2, Example 7 had a proton conductivity of 0.39 S/cm at 100° C., and a proton conductivity of 0.71 S/cm at 500° C.
An experiment was conducted similarly to Example 6 except that a film was formed by using a sintered target having an element ratio of Ba:Sr:Zr:Y=2:7:4:6. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 8 had a perovskite crystal structure and was polycrystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba) and strontium (Sr). The barium (Ba) and strontium (Sr) had a ratio such that barium (Ba) was 0.20 and strontium (Sr) was 0.68, and the a value was 0.88. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.58 (Zr:0.42, Y:0.58). As shown in Table 1 and Table 2, Example 8 had a proton conductivity of 0.15 S/cm at 100° C., and a proton conductivity of 0.57 S/cm at 500° C.
An experiment was conducted similarly to Example 6 except that a film was formed by using a sintered target having an element ratio of Ba:Sr:Zr:In=4:1:8:2. Table 1 shows the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 9 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba) and strontium (Sr). The barium (Ba) and strontium (Sr) had a ratio such that barium (Ba) was 0.35 and strontium (Sr) was 0.08, and the a value was 0.43. Moreover, the B element was zirconium (Zr); the B′ element was indium (In); and the x value was 0.21 (Zr:0.79, In:0.21). As shown in Table 1 and Table 2, Example 9 had a proton conductivity of 0.29 S/cm at 100° C., and a proton conductivity of 0.55 S/cm at 500° C.
An experiment was conducted similarly to Example 6 except that a film was formed by using a sintered target having an element ratio of Ba:Sr:Zr:Y=5:2:6:4. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 10 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba) and strontium (Sr). The barium (Ba) and strontium (Sr) had a ratio such that barium (Ba) was 0.48 and strontium (Sr) was 0.21, and the a value was 0.69. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.39 (Zr:0.61, Y:0.39). As shown in Table 1, Example 10 had a proton conductivity of 0.35 S/cm at 100° C., and a proton conductivity of 0.69 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=2:2:3. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 11 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.41. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.58 (Zr:0.42, Y:0.58). As shown in Table 1, Example 11 had a proton conductivity of 0.45 S/cm at 100° C., and a proton conductivity of 0.95 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=9:8:2. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 12 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.88. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.21 (Zr:0.79, Y:0.21). As shown in Table 1, Example 12 had a proton conductivity of 0.12 S/cm at 100° C., and a proton conductivity of 0.65 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=3:4:1. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Example 13 had a perovskite crystal structure and was single-crystalline. As shown in Table 1, in this proton conducting oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.42. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.22 (Zr:0.78, Y:0.22). As shown in Table 1, Example 13 had a proton conductivity of 0.31 S/cm at 100° C., and a proton conductivity of 0.54 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=5:4:1. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Comparative Example 1 had a perovskite crystal structure and was single-crystalline. As shown in Table 1 and Table 2, in this oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.98. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.19 (Zr:0.81, Y:0.19).
As shown in Table 1 and Table 2, Comparative Example 1 had a proton conductivity of 2.3×10−5 S/cm at 100° C., and a proton conductivity of 0.039 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:In=7:9:1. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Comparative Example 2 had a perovskite crystal structure and was single-crystalline. As shown in Table 1 and Table 2, in this oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.65. Moreover, the B element was zirconium (Zr); the B′ element was indium (In); and the x value was 0.13 (Zr:0.87, In:0.13). As shown in Table 1, Comparative Example 2 had a proton conductivity of 0.01 S/cm at 100° C., and a proton conductivity of 0.013 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that a film was formed by using a sintered target having an element ratio of Ba:Zr:Y=4:7:3. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, the proton conducting oxide of Comparative Example 3 contained a polycrystalline perovskite crystal structure. Moreover, zirconium dioxide (ZrO2) was detected as an impurity phase. As shown in Table 1, in this oxide (AaB1-xB′xO3-x), the A element was barium (Ba), and the a value was 0.35. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.32 (Zr:0.68, Y:0.32). As shown in Table 1, Comparative Example 3 had a proton conductivity of 3.2×10−6 S/cm at 100° C., and a proton conductivity of 8.5×10−3 S/cm at 500° C.
An experiment was conducted similarly to Example 1 except that the material of the base substrate was single-crystalline strontium titanate (SrTiO3), and that the film was formed by using a sintered target having an element ratio of Sr:Zr:Y=8:3:7. Table 1 and Table 2 show the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, the proton conducting oxide of Comparative Example 4 contained a polycrystalline perovskite crystal structure. Moreover, barium carbonate (BaCO3) and yttrium oxide (Y2O3) were also detected as an impurity phase. As shown in Table 1 and Table 2, in this oxide (AaB1-xB′xO3-x), the A element was strontium (Sr), and the a value was 0.78. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.68 (Zr:0.32, Y:0.68).
As shown in Table 1 and Table 2, Comparative Example 4 had a proton conductivity of 6.5×10−6 S/cm at 100° C., and a proton conductivity of 9.4×10−3 S/cm at 500° C.
An experiment was conducted similarly to Comparative Example 4 except that a film was formed by using a sintered target having an element ratio of Sr:Zr:Y=5:3:2. Table 1 shows the structure, mole fractions, and proton conductivity of the resultant film of proton conducting oxide.
As shown in Table 1 and Table 2, it was confirmed that the proton conducting oxide of Comparative Example 5 had a perovskite crystal structure and was polycrystalline. As shown in Table 1 and Table 2, in this oxide (AaB1-xB′xO3-x), the A element was strontium (Sr), and the a value was 1.01. Moreover, the B element was zirconium (Zr); the B′ element was yttrium (Y); and the x value was 0.45 (Zr:0.55, Y:0.45).
As shown in Table 1 and Table 2, Comparative Example 5 had a proton conductivity of 4.3×10−6 S/cm at 100° C., and a proton conductivity of 8.6×10−3 S/cm at 500° C.
As shown in Table 1 and Table 2, it can be seen that the proton conducting oxides of Examples 1 to 13 had high proton conductivity as compared to Comparative Examples 1 to 5. The proton conducting oxides of Examples 1 to 13 satisfy the conditions of 0.4<a<0.9 and 0.2<x<0.6.
A manufacturing error of at least about 5% is known to exist. From the a and x values of Examples 1 to 13, proton conducting oxides satisfying 0.4<a<0.9 and 0.2<x<0.6 have high proton conductivity.
More specifically, the proton conductor oxides of Example 3, Example 9, Example 11, and Example 12 fall within numerical ranges bounded by the four equations of x=0.21, x=0.58, a=−0.054x+0.441, and a=−0.027x+0.886. That is, in these Examples, the mole fractions x and a satisfy the following relationship.
0.21≦x≦0.58,
a≧−0.054x+0.441, and
a≦−0.027x+0.886
In the proton conducting oxides of Examples 1 to 13, the activation energies at 100° C. and 500° C. were lower than 0.1 eV. On the other hand, the oxides of Comparative Examples 1 and 3 to 5 had activation energies higher than 0.1 eV. In other words, when the mole fractions satisfy the above conditions (Examples), the proton conducting oxides maintain high proton conductivity of 10−1 S/cm or more, even in a temperature region of not less than 100° C. and not more than 500° C. Thus, according to the present disclosure, the activation energy of proton conduction can be kept at 0.1 eV or less, whereby a decrease in proton conductivity due to decreasing temperature can be suppressed. Furthermore, proton conducting oxides satisfying the conditions of 0.4<a<0.9 and 0.2<x<0.6 have higher proton conductivity than does the oxide of Comparative Example 2, which has an activation energy of proton conduction of 0.1 eV or less.
From the experiment of the inventors, it has been found that production is facilitated when (1-a), which represents the amount of deficiencies of the A element, is close to the mole fraction x of the B′ element. Therefore, it is practically useful if the following relationship is satisfied.
0.5<(1−a)/x<2.5
Moreover, as is clear from Table 1 and Table 2, relatively high proton conductivity is realized when 0.4<a<0.6 and 0.4<x<0.6, and the highest high proton conductivity is realized when 0.4<a<0.5 and 0.4<x<0.6.
Furthermore, the proton conducting oxides of Examples 1, 2, 5, 7, 10, and 11 have higher proton conductivity at 500° C. With a manufacturing error of at least about 5% taken into consideration, the proton conducting oxides of Examples 1, 2, 5, 7, 10, and 11 satisfy the conditions of 0.4<a<0.8 and 0.3<x<0.6. More specifically, the proton conducting oxides of Example 1, 2, 5, 7, 10, and 11 satisfy conditions defined by the numerical ranges of 0.41<a<0.73 and 0.31<x<0.58 plus the manufacturing error.
Furthermore, the proton conducting oxides of Example 2, 5, 7, and 11 have high proton conductivity at 100° C. With a manufacturing error of at least about 5% taken into consideration, the proton conducting oxides of Example 2, 5, 7, and 11 satisfy the conditions of 0.4<a<0.8 and 0.4<x<0.6. More specifically, the proton conducting oxides of Example 2, 5, 7, and 11 satisfy conditions defined by the numerical ranges of 0.41<a<0.71 and 0.41<x<0.58 plus the manufacturing error.
Hereinafter, a structure and operation of the organic hydride conversion device according to an embodiment of the present disclosure will be described with reference to
An organic hydride conversion device 100 shown in
As exemplified in
In the operation of the organic hydride conversion device 100, as shown in
The anode 102 includes the dehydrogenation catalyst. In other words, the anode 102 is configured to withdraw protons from a gas or a liquid containing the organic hydride. An example of the catalyst included in the anode 102 is a metal including at least one selected from the group consisting of Ni, Pt, Pd, and an alloy thereof. Another example of the catalyst included in the anode 102 is an oxide including at least one selected from the group consisting of Ni, Pt, and Pd.
When a metal including at least one selected from the group consisting of Ni, Pt, Pd, and an alloy thereof is used as the catalyst included in the anode 102, the catalyst may be supported on the surface of the support formed of Al2O3, SiO2, or ZrO2. In other words, the anode 102 may further include the support. The material of the support is not limited. The anode 102 can be easily formed on the support formed of Al2O3, SiO2, or ZrO2. The shape of the support is not limited, as long as the catalyst included in the anode 102 is electrically connected to the external power supply 104. When the anode 102 includes the support, the catalyst can be dispersed on the support having a large surface area.
The anode 102 is formed by a film formation method such as a sputtering method, a pulse laser deposition method (hereinafter, referred to as “PLD method”), or a chemical vapor deposition method (hereinafter, referred to as “CVD method”). After an ink in which a powder formed of the above-mentioned material is dispersed in a solvent is applied by a screen printing method, the ink may be dried and solidified through heat and vacuum treatment to give the anode 102. The method for forming the anode 102 is not limited.
The cathode 103 includes a hydrogenation catalyst. In other words, the cathode 103 is configured to add hydrogen atoms to the dehydrogenation compound by using protons which have been transferred from the anode 102 to the cathode 103 through the proton conductor 101. It is beneficial that the catalyst included in the cathode 103 is a catalyst including a metal or alloy capable of securing electrical conductivity even when the catalyst is reduced by hydrogen generated through the recombination between protons and electrons. An example of the catalyst included in the cathode 103 is a metal including at least one selected from the group consisting of Ni, Pt, Pd, Rh, and an alloy thereof. Another example of the catalyst included in the cathode 103 is an oxide including at least one selected from the group consisting of Ni, Pt, Pd, and Rh. A cermet may be used as the catalyst included in the cathode 103. For example, a cermet containing an oxide including at least one selected from the group consisting of Ni, Pt, Pd, and Rh may be used. From a viewpoint of easiness and costs of the formation of the cathode 103, it is beneficial that a cermet containing an oxide including Ni is used.
Another example of the catalyst contained in the cathode 103 is an oxide having a perovskite crystal structure expressed by the compositional formula ABO3-δ. A includes at least one selected from the group consisting of Ba, Sr, Ca, La, and Sm. B includes Ru and at least one selected from the group consisting of Zr and Ce. Alternatively, B includes at least one selected from the group consisting of Ni, Fe, Co, and Mn. O represents oxygen. δ represents oxygen defect or oxygen excess. An example of the ABO3-δ is La1-xSrxFeO3-δ (0≦x≦1.0), La1-xSrxCo1-yFeyO3-δ (0≦x≦1.0 and 0.1≦y≦0.8), La1-xSrxMnO3-δ (0≦x≦0.4), Sm1-xSrxCoO3-δ (0.2<x<0.8), or Ba1-xSrxCo1-yFeO3-δ (0.4≦x≦1.0 and 0.4≦y≦1.0). An oxide having a K2NiF4 crystal structure represented by La2-xSrxNiO4-δ (0≦x≦0.5) can be used.
A mixed-conducting oxide capable of having protons and electrons travel therethrough may be used as the catalyst included in the cathode 103. For example, an oxide expressed by the compositional formula AB1-xB′xO3-δ may be used. This oxide has the above-mentioned perovskite crystal structure. A includes at least one selected from the group consisting of Ba, Sr, and Ca. B includes Ru and at least one selected from the group consisting of Zr and Ce. B′ includes Y, In, or a trivalent lanthanoid element. The value of x which represents a composition ratio of B′ falls within the range of 0.10<x<0.80, more desirably, 0.25<x<0.75. The atomic ratio of Ru is, for example, not less than 0.01 and not more than 0.8, in a case where the sum of the atomic numbers of A, B, and B′ is equal to 2.
The cathode 103 may be formed by a film formation method such as a sputtering method, a PLD method, or a CVD method. After an ink in which a powder formed of the above-mentioned material is dispersed in a solvent is applied by a screen printing method, the ink may be dried and solidified through heat and vacuum treatment to give the cathode 103. The method for forming the cathode 103 is not limited.
The organic hydride conversion device 100 shown in
As shown in
As shown in
In the organic hydride conversion device 100, the liquid or the gas containing the organic hydride is supplied to the anode 102 and the liquid or the gas containing the dehydrogenation compound is supplied to the cathode 103. In the organic hydride conversion device 100, by applying a voltage difference between the anode 102 and the cathode 103, the organic hydride is dehydrogenated on the anode 102 and the dehydrogenation compound is hydrogenated on the cathode 103. In this way, an organic hydride is generated in the second flow path 110.
For example, a liquid organic hydride (e.g., methylcyclohexane) is supplied from the first fluid inlet 105, and the organic hydride is brought into contact with the anode 102 in the first flow path 109. An organic hydride in the form of mist may be sprayed on the anode 102. A gas containing an organic hydride in the form of a gas or vapor may be supplied to the anode 102. The gas supplied to the anode 102 may contain, for example, a hydrocarbon gas, a nitrogen gas, a carbon dioxide gas, an oxygen gas, an argon gas, or a helium gas. Protons are withdrawn from the organic hydride (e.g., methylcyclohexane).
The reaction shown in the following chemical reaction formula (1) progresses on the anode 102.
C7H14→C7H8+6H++6e− (1)
The dehydrogenation product (e.g., toluene) of the organic hydride (e.g., methylcyclohexane) is discharged through the first fluid outlet 106. The dehydrogenation product discharged through the first fluid outlet 106 may be reused as the organic hydride after the hydrogenation thereof. The emissions discharged through the first fluid outlet 106 may contain the organic hydride. The organic hydride discharged through the first fluid outlet 106 may be collected and supplied again from the first fluid inlet 105 to the first flow path 109.
In the organic hydride conversion device 100, it is not necessary to maintain the electrolyte in the wet condition unlike a case where the solid polymer membrane is used as a proton conductive solid electrolyte. For this reason, the dehydrogenation product containing almost no water can be obtained. It is easy to reuse the obtained dehydrogenation products as the organic hydride after the hydrogenation thereof. The organic hydride conversion device 100 is operated under a temperature of approximately 200 degrees Celsius. For this reaction, the organic hydride and/or the organic hydride conversion product thereof can be prevented from being deformed.
The protons generated on the anode 102 are transferred through the proton conductor 101 and reach the cathode 103. The proton conductor 101 prevents the anode 102 and the cathode 103 from being short-circuited. The proton conductor 101 also supplies the protons generated on the anode 102 to the cathode 103. In the operation of the organic hydride conversion device 100, the external power supply 104 applies a voltage between the anode 102 and the cathode 103. The protons generated on the anode 102 are electrochemically transferred through the proton conductor 101 to the cathode 103.
Protons are withdrawn on the anode 102 from the gas containing the organic hydride. Then, the protons are transferred through the proton conductor 101 and reduced to hydrogen on the cathode 103. The dehydrogenation compound (e.g., benzene) is supplied from the second fluid inlet 107. And then, the dehydrogenation compound (e.g., benzene) is brought into contact with the cathode 103 in the second flow path 110. In this way, the dehydrogenation compound is hydrogenated. The dehydrogenation compound in the form of mist may be sprayed on the cathode 103. By bringing the dehydrogenation compound (e.g., benzene) into contact with the cathode 103, the reaction shown in the following chemical reaction formula (2) progresses on the cathode 103.
C6H6+6H++6e−→C6H12 (2)
Through the above reaction, the organic hydride (e.g., cyclohexane) is obtained in the second flow path 110. In the organic hydride conversion device 100, it is not necessary to maintain the electrolyte in the wet condition unlike the case where the solid polymer membrane is used as a proton conductive solid electrolyte. For this reason, the organic hydride containing almost no water can be obtained. The organic hydride conversion device 100 is operated under a temperature of approximately 200 degrees Celsius. For this reaction, the dehydrogenation compound and/or the generated organic hydride can be prevented from being deformed.
The organic hydride (e.g. cyclohexane) is discharged through the second fluid outlet 108. The unreacted (i.e., unhydrogenated) part of the dehydrogenation compound supplied from the second fluid inlet 107 is discharged through the second fluid outlet 108. The unreacted dehydrogenation compound may be collected and supplied again through the second fluid inlet 107 to the second flow path 110.
The flow path for supplying the gas or liquid containing the organic hydride and the flow path for collecting the generated hydrogen gas are not limited to those shown in
As just described, the embodiments according to the present disclosure provide a practical organic hydride conversion device operable even in the temperature range of not less than 100 degrees Celsius and not more than 300 degrees Celsius. Using organic hydride conversion device according to the present disclosure, the organic hydride can be converted into another organic hydride, although the organic hydride conversion device has a simple structure.
The organic hydride conversion device according to the embodiment of the present disclosure can be used to convert the organic hydride in which hydrogen is stored into another organic hydride.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-022716 | Feb 2014 | JP | national |
| Number | Name | Date | Kind |
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| 20030124403 | Taniguchi | Jul 2003 | A1 |
| 20100196767 | Sala et al. | Aug 2010 | A1 |
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| 2000-302550 | Oct 2000 | JP |
| 2003-045449 | Feb 2003 | JP |
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| 2008-130514 | Jun 2008 | JP |
| 2009-231075 | Oct 2009 | JP |
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| Number | Date | Country | |
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| 20150225862 A1 | Aug 2015 | US |
