Organic light emitting devices

Information

  • Patent Grant
  • 8487527
  • Patent Number
    8,487,527
  • Date Filed
    Wednesday, May 4, 2005
    19 years ago
  • Date Issued
    Tuesday, July 16, 2013
    11 years ago
Abstract
The present invention relates to organic light emitting devices (OLEDs) comprising an electroluminescent material layer comprising a mixture of at least two materials having different electron and hole transport capacities, and an electron transport layer comprising a triazine. Display devices comprising the OLEDs are also disclosed.
Description
FIELD

The present disclosure relates to organic light emitting devices.


REFERENCES

Organic Light Emitting Devices (OLEDs) represent a promising technology for display applications. A conventional device structure comprises (1) a transparent front electrode, (2) a multi-organic-layer light emitting region (usually at least two layers) comprising at least a small-molecule or polymeric organic electroluminescent material, and (3) a back electrode. The OLED is usually laminated on a substrate. One of the front and back electrodes is an electron-injecting cathode, and the other is a hole-injecting anode. When a voltage is applied across the electrodes, light is emitted from the light emitting region and through the transparent front electrode to reach the observer. Conventionally, a light emitting region comprises (1) at least one electron transport material layer near the cathode, (2) at least one hole transport material layer near the anode, and (3) an electroluminescent material layer in between the hole transport layer and the electron transport layer.


A number of OLEDs have been prepared from a laminate of an organic luminescent material. Such devices include a single crystal material as the electroluminescent substance, such as single crystal anthracenes as described, for example, in U.S. Pat. No. 3,530,325 (the disclosure of which is incorporated herein by reference). These types of devices can require excitation voltages on the order of 100 volts or greater.


As discussed above, OLEDs are conventionally formed as multilayered structures. OLEDs with dual layer light emitting regions comprising one organic layer adjacent to the anode supporting hole transport, and another organic layer adjacent to the cathode supporting electron transport and acting as the electroluminescent region layer of the device are disclosed in U.S. Pat. Nos. 4,356,429; 4,539,507; 4,720,432, and 4,769,292 (the disclosures of which are incorporated herein by reference).


U.S. Pat. No. 4,769,292 discloses a conventional OLED with an electroluminescent material layer comprising a hole transport layer, an electroluminescent layer, and an electron transport layer in which a fluorescent dopant material is added to the emission layer. In other conventional OLED structures such as, for example, those described in U.S. Pat. No. 4,720,432, the OLED further comprises a buffer layer interposed between the hole transport layer and the anode. The combination of the hole transport layer and the buffer layer forms a dual-layer hole transport region. This is discussed in S. A. Van Slyke et al., “Organic Electroluminescent Devices with Improved Stability,” Appl. Phys. Lett. 69, pp. 2160-2162 (1996) (the disclosure of which is incorporated herein by reference).


There have also been attempts to obtain electroluminescence from OLEDs containing mixed layers, for example, layers in which both the hole transport material and the emitting electron transport material are mixed together in one single layer. See, for example, Kido et al., “Organic Electroluminescent Devices Based On Molecularly Doped Polymers,” Appl. Phys. Lett. 61, pp. 761-763 (1992); S. Naka et al., “Organic Electroluminescent Devices Using a Mixed Single Layer,” Jpn. J. Appl. Phys. 33, pp. L1772-L1774 (1994); W. Wen et al., Appl. Phys. Lett. 71, 1302 (1997); and C. Wu et al., “Efficient Organic Electroluminescent Devices Using Single-Layer Doped Polymer Thin Films with Bipolar Carrier Transport Abilities”, IEEE Transactions on Electron Devices 44, pp. 1269-1281 (1997). The light emitting material can be one of the hole transport and electron transport materials. According to one embodiment, there can be a third material in addition to the hole transport and electron transport materials, in which the third material emits light.


Other examples of OLEDs formed of a single organic layer comprising a hole transport material and an electron transport material can be found, for example, in U.S. Pat. Nos. 5,853,905; 5,925,980; 6,114,055 and 6,130,001 (the disclosures of which are all incorporated herein by reference). As indicated in the article by S. Naka et al., these single mixed layer OLEDs can be less efficient than multilayer organic light emitting devices. These devices, which include only a single mixed layer of a hole transport material, such as NPB (N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine), and an emitting electron transport material, such as AlQ3 (tris(8-hydroxyquinoline) aluminum), are unstable and have poor efficiency. The instability of these devices is believed to be caused by the direct contact between the electron transport material in the mixed layer and the hole injecting material, which results in (1) the formation of an unstable cationic electronic transport material, and (2) the instability of the mixed layer/cathode interface.


For commercial applications, it can be useful for OLED displays to demonstrate both high efficiency (e.g., to have a driving voltage less than 5V for a current density of 25 mA/cm2), and sufficient operational stability (e.g., a half-life greater than 1000 hours for an initial brightness of at least 500 cd/m2). Small-molecule OLEDs with low driving voltage have been demonstrated in the past (e.g., Huang et al., APL 80, 139, 2002). However, such OLEDs can lack sufficient operational stability, potentially rendering them unsuitable for commercial applications. By using mixed emitting layer OLEDs, high operational stability has been realized, and driving voltages often exceeded a certain voltage, for example 5V. There is a need for OLEDs that demonstrate both low driving voltage and sufficient operational stability.


SUMMARY

In accordance with various embodiments, there is disclosed herein organic light emitting device comprising (a) an anode, (b) a hole transport layer, (c) an electroluminescent material layer comprising at least two materials having different electron and hole transport capacities, (d) an electron transport layer comprising a triazine, and (e) a cathode, wherein said electroluminescent material layer has a thickness of less than 50 nm.


According to another aspect of the disclosure, there is provided a display comprising at least one organic light emitting device comprising (a) an anode, (b) a hole transport layer, (c) an electroluminescent material layer comprising at least two materials having different electron and hole transport capacities, (d) an electron transport layer comprising a triazine, and (e) a cathode, wherein said electroluminescent material layer has a thickness of less than 50 nm.


According to yet another aspect of the disclosure there is provided an organic light-emitting device comprising (a) an anode, (b) a hole transport layer, (c) an electroluminescent material layer comprising at least two of: (i) an electron transport material, (ii) a hole transport material, and (iii) a bipolar transport material, (d) an electron transport layer comprising a triazine, and (e) a cathode, wherein said electroluminescent material layer has a thickness of less than 50 nm.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 illustrates an organic light emitting device in accordance with the present disclosure.



FIG. 2 illustrates another organic light emitting device in accordance with the present disclosure.





DESCRIPTION OF VARIOUS EMBODIMENTS

In an embodiment, and with reference to FIG. 1, an OLED 10 comprises in sequence a supporting substrate 20 of, for example, glass; an anode 30 of, for example, indium tin oxide in a thickness of from about 1 to about 500 nm, such as from about 30 to about 100 nm; an optional buffer layer 40 of, e.g., copper phthalocyanine, or plasma polymerized CHF3 in a thickness from about 1 nm to about 300 nm; an organic hole transporting layer 50 of, for example, NPB in a thickness of from about 1 to about 200 nm, for example from about 5 to about 100 nm; an electroluminescent layer 60 comprised of, for example, a composition comprising a hole transport/electron transport/bipolar transport material, with the layer having a thickness of from about 5 to about 50 nm; an electron transporting layer 70 comprised of, for example, a triazine in a thickness of from about 5 to about 300 nm, for example from about 10 to about 100 nm, and in contact therewith a low work function metal cathode 80. An optional protective layer 90 can be formed on the cathode 80. According to another embodiment, and as illustrated in FIG. 2, in OLED 15 the supporting substrate 20 is adjacent to cathode 80, and optional protective layer 90 is adjacent to anode 30.


In various embodiments, OLEDs can comprise a supporting substrate 20. Illustrative examples of supporting substrates 20 include glass and the like, and polymeric components including polyesters like MYLAR®, polycarbonates, polyacrylates, polymethacrylates, polysulfones, quartz, and the like. Other substrates 20 may also be selected provided they can effectively support the other layers and do not interfere with the device functional performance. The thickness of substrate 20 can range, for example, from about 25 to about 1,000 μm or more, for example from about 50 to about 500 μm depending, for example, on the structural demands of the device.


According to various embodiments, the OLEDs can contain an anode 30, which can be contiguous to the substrate. Suitable non-limiting examples of anode 30 include positive charge injecting electrodes such as indium tin oxide, tin oxide, gold, platinum, or other suitable materials such as electrically conductive carbon, π-conjugated polymers such as polyaniline, polypyrrole, and the like with, for example, a work function equal to, or greater than about 4 eV (electron volts), and more specifically, from about 4 eV to about 6 eV. The thickness of the anode can range from about 1 to about 500 nm, with the suitable range being selected in view of the optical constants of the anode material. One suitable range of anode thickness is from about 30 to about 100 nm.


A buffer layer 40 can optionally be provided contiguous to the anode. The buffer layer, which can function to facilitate efficient injection of holes from the anode and to improve the adhesion between the anode and the hole transporting layer (thus further improving the device operation stability) includes conductive materials such as polyaniline and its acid-doped forms, polypyrrole, poly(phenylene vinylene), and known semiconductive organic materials; porphyrin derivatives disclosed in U.S. Pat. No. 4,356,429, the disclosure of which is totally incorporated herein by reference, such as 1,10,15,20-tetraphenyl-21H,23H-porphyrin copper (II); copper phthalocyanine, copper tetramethyl phthalocyanine; zinc phthalocyanine; titanium oxide phthalocyanine; magnesium phthalocyanine; and the like. The buffer layer can comprise a tertiary amine suitable as an electron hole transport material. The buffer layer can be prepared by forming one of the above compounds into a thin film by known methods, such as vapor deposition or spin coating. The thickness of the buffer layer thus formed is not particularly limited, and can range of from about 5 nm to about 300 nm, for example from about 10 nm to about 100 nm.


In various embodiments, the OLEDs can comprise a hole transport layer 50 comprising a hole transport material. Suitable non-limiting examples of hole transport materials include tertiary aromatic amines, like NPB; N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1-biphenyl-4,4′-diamine) (TPD); N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine) (NPB); N,N′-bis(p-biphenyl)-N,N′-diphenyl benzidine (BP-TPD), and the aromatic tertiary amines disclosed in U.S. Pat. No. 4,539,507, the disclosure of which is incorporated herein by reference. Examples of suitable aromatic tertiary amines include bis(4-dimethylamino-2-methylphenyl)phenylmethane; N,N,N-tri(p-tolyl)amine; 1,1-bis(4-di-p-tolylaminophenyl) cyclohexane; 1,1-bis(4-di-p-tolylaminophenyl)-4-phenyl cyclohexane; N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine; N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine; N,N′-diphenyl-N,N′-bis(4-methoxyphenyl)-1,1′-biphenyl-4,4′-diamine; N,N, N′,N′tetra-p-tolyl-1,1′-biphenyl-4,4′-diamine; N,N′-di-1-naphthyl-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine; and the like.


Another class of aromatic tertiary amines suitable as hole transporting materials is the polynuclear aromatic amines, such as N,N-bis-[4′-(N-phenyl-N-m-tolylamino)-4-biphenylyl]aniline; N,N-bis-[4′-(N-phenyl-N-m-tolylamino)-4-biphenylyl]-m-toluidine; N,N-bis-[4′-(N-phenyl-N-m-tolylamino)-4-biphenylyl]-p-toluidine; N,N-bis-[4′-(N-phenyl-N-p-tolylamino)-4-biphenylyl]aniline; N,N-bis-[4′-(N-phenyl-N-p-tolylamino)-4-biphenylyl]-m-toluidine; N,N-bis-[4′-(N-phenyl-N-p-tolylamino)-4-biphenylyl]-p-toluidine; N,N-bis-[4′-(N-phenyl-N-p-chlorophenylamino)-4-biphenylyl]-m-toluidine; N,N-bis-[4′-(N-phenyl-N-m-chlorophenylamino)-4-biphenylyl]-m-toluidine; N,N-bis-[4′-(N-phenyl-N-m-chlorophenylamino)-4-biphenylyl]-p-toluidine; N,N-bis-[4′-(N-phenyl-N-m-tolylamino)-4-biphenylyl]-p-chloroaniline; N,N-bis-[4′-(N-phenyl-N-p-tolylamino)-4-biphenylyl]-m-chloroaniline; and N,N-bis-[4′-(N-phenyl-N-m-tolylamino)-4-biphenylyl]-1-aminonaphthalene, and the like.


Additional hole transport materials useful for hole transport layer 50 include carbazoles like N,N′-dicarbazolyl-4-4′-biphenyl (CBP), 4,4′-bis(3,6-diphenyl carbazol-9-yl)-1,1′-biphenyl (TPCB), and 4,4′-bis(9-carbazolyl)-1,1′-biphenyl compounds. Illustrative examples of 4,4′-bis(9-carbazolyl)-1,1′-biphenyl compounds include 4,4′-bis(9-carbazolyl)-1,1′-biphenyl and 4,4′-bis(3-methyl-9-carbazolyl)-1,1′-biphenyl, and the like. Another class of suitable hole transport materials is the indocarbazoles, such as 5,11-di-naphthyl-5,11-dihydroindolo[3,2-b]carbazole (NIC). Hole transport layer 50 can have a thickness ranging from about 1 nm to about 200 nm. According to another embodiment, the thickness ranges from about 5 nm to about 100 nm.


The OLEDs disclosed herein can comprise an electroluminescent layer. According to various embodiments, electroluminescent material layer 60 can comprise at least two materials having different electron and hole transport capacities. Materials that can be used in electroluminescent layer 60 include, but are not limited to, hole transport materials, electron transport materials, and bipolar transport materials. Various hole transport, electron transport, and bipolar transport materials are known in the art, as is their combined selection to achieve desired color emissions. Furthermore, selection of such materials to provide a desired color emission can be readily conducted by one of ordinary skill in the art through routine experimentation.


In various embodiments, electroluminescent layer 60 can comprise a hole transport material. Non-limiting examples of hole transport materials suitable for the electroluminescent layer include tertiary aromatic amines, polynuclear aromatic amines, carbazoles, and indocarbazole. For example, the electroluminescent layer 60 may comprise at least one of the hole transport materials identified herein as being suitable for the hole transport layer 50.


Electroluminescent layer 60 can also include at least one electron transport material, such as metal chelates like AlQ3 and bis(8-hydroxyquinolato)-(4-phenylphenolato)aluminum (BAlQ), stilbenes like 4,4′-bis(2,2-diphenylvinyl)-1,1′-biphenyl (DPVBi), oxadiazoles like 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), and triazines such as 4,4′-Bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl (T1) including those triazines identified for the triazine electron transport layer. Illustrative examples of electron transport materials that can be used include, but are not limited to, the metal chelates of 8-hydroxyquinoline as disclosed in U.S. Pat. Nos. 4,539,507; 5,151,629; 5,150,006; and 5,141,671 (each of which is incorporated herein by reference). Illustrative examples include bis(8-hydroxyquinolato)-(4-phenylphenolato)aluminum (Balq); tris(8-hydroxyquinolinate) gallium; bis(8-hydroxyquinolinate) magnesium; bis(8-hydroxyquinolinate) zinc; tris(5-methyl-8-hydroxyquinolinate) aluminum; tris(7-propyl-8-quinolinolato) aluminum; bis[benzo{f}-8-quinolinate]zinc; bis(10-hydroxybenzo[h]quinolinate) beryllium; and the like.


Another suitable class of electron transport materials suitable for electroluminescent layer 60 comprises stilbene derivatives, such as those disclosed in U.S. Pat. No. 5,516,577, which is incorporated herein by reference. A suitable stilbene derivative is 4,4′-bis(2,2-diphenylvinyl)biphenyl. Yet another class of suitable electron transport materials is the metal thioxinoid compounds, illustrated in U.S. Pat. No. 5,846,666 (incorporated herein by reference). These materials include metal thioxinoid compounds of bis(8-quinolinethiolato)zinc; bis(8-quinolinethiolato)cadmium; tris(8-quinolinethiolato)gallium; tris(8-quinolinethiolato)indium; bis(5-methylquinolinethiolato)zinc; tris(5-methylquinolinethiolato)gallium; tris(5-methylquinolinethiolato)indium; bis(5-methylquinolinethiolato)cadmium; bis(3-methylquinolinethiolato)cadmium; bis(5-methylquinolinethiolato)zinc; bis[benzo{f}-8-quinolinethiolato]zinc; bis[3-methylbenzo{f}-8-quinolinethiolato]zinc; bis[3,7-dimethylbenzo{f}-8-quinolinethiolato]zinc; and the like. Additional suitable materials include bis(8-quinolinethiolato)zinc; bis(8-quinolinethiolato)cadmium; tris(8 quinolinethiolato)gallium; tris(8-quinolinethiolato)indium; and bis[benzo{f}-8-quinolinethiolato]zinc.


Still another class of suitable electron transport materials useful in the electroluminescent layer 60 is the oxadiazole metal chelates disclosed in U.S. Pat. No. 5,925,472 (incorporated herein by reference). These materials include bis[2-(2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazolato]beryllium; bis[2-(2-hydroxyphenyl)-5-(1-naphthyl)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-(1-naphthyl)-1,3,4-oxadiazolato]beryllium; bis[5-biphenyl-2-(2-hydroxyphenyl)-1,3,4-oxadiazolato]zinc; bis[5-biphenyl-2-(2-hydroxyphenyl)-1,3,4-oxadiazolato]beryllium; bis[2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazolato]lithium; bis[2-(2-hydroxyphenyl)-5-p-tolyl-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-p-tolyl-1,3,4-oxadiazolato]beryllium; bis[5-(p-tert-butylphenyl)-2-(2-hydroxyphenyl)-1,3,4-oxadiazolato]zinc; bis[5-(p-tert-butylphenyl)-2-(2-hydroxyphenyl)-1,3,4-oxadiazolato]beryllium; bis[2-(2-hydroxyphenyl)-5-(3-fluorophenyl)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-(4-fluorophenyl)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-(4-fluorophenyl)-1,3,4-oxadiazolato]beryllium; bis[5-(4-chlorophenyl)-2-(2-hydroxypheny)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-(4-methoxyphenyl)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxy-4-methylphenyl)-5-phenyl-1,3,4-oxadiazolato]zinc; bis[2-α-(2-hydroxynaphthyl)-5-phenyl-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-p-pyridyl-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-p-pyridyl-1,3,4-oxadiazolato]beryllium; bis[2-(2-hydroxyphenyl)-5-(2-thiophenyl)-1,3,4-oxadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-phenyl-1,3,4-thiadiazolato]zinc; bis[2-(2-hydroxyphenyl)-5-phenyl-1,3,4-thiadiazolato]beryllium; bis[2-(2-hydroxyphenyl)-5-(1 naphthyl)1,3,4-thiadiazolato]zinc; and bis[2-(2-hydroxyphenyl)-5-(1-naphthyl)-1,3,4-thiadiazolato]beryllium, and the like.


In various embodiments, electroluminescent layer 60 can comprise a bipolar transport material, separately or in place of electron and/or hole transport materials. Suitable bipolar materials include anthracenes like 2-(1,1-dimethyethyl)-9,10-bis(2-naphthalenyl)anthracene (TBADN), 9,10-di-(2-naphthyl) anthracene (DNA), 9,10-di-(2-naphthyl) anthracene (DPA), 9-bis(phenyl) anthracene (BPA), Spiro-BPA and Spiro-DPA, perylenes, like 2,5,8,11-tetra-t-butylperylene (BD2), tetracenes like rubrene, and other hydrocarbon materials in general.


In various embodiments, electroluminescent layer 60 can comprise a mixture of at least two materials having different electron and hole transport capacities. The said two materials having different electron and hole transport capacities can be any two materials that have different hole mobilities and/or different electron mobilities. In general, a material is considered to be a hole transport material if its hole mobility is at least about 10 times higher than its electron mobility. In general, a material is considered to be an electron transport material if its electron mobility is at least about 10 times higher than its hole mobility. In general, a material is considered to be a bipolar transport material if its hole mobility is equal to its electron mobility, if its hole mobility exceeds its electron mobility by no more than 10 times, or if its electron mobility exceeds its hole mobility by no more than 10 times. The two materials having different electron and hole transport capacities can be independently selected from hole transport materials, electron transport materials and bipolar transport materials, illustrative examples of which have been given above. For example, both materials can be hole transport materials, both materials can be electron transport materials, both materials can be bipolar transport materials, one material can be a hole transport material and the other material can be an electron transport material, one material can be a hole transport material and the other material can be a bipolar transport material, or one material can be an electron transport material and the other material can be a bipolar transport material. In embodiments where the mixture comprises two hole transport materials, the two materials are selected such that the hole mobility of one material is at least two times higher than the hole mobility of the other material. In embodiments where the mixture comprises two electron transport materials, the two materials are selected such that the electron mobility of one material is at least two times higher than the electron mobility of the other material. In embodiments where the mixture comprises two bipolar transport materials, the two materials are selected such that the hole mobility of one material is at least two times higher than the hole mobility of the other material, and/or the electron mobility of one material is at least two times higher than the electron mobility of the other material. A mixed region can comprise from about 5 volume percent to about 95 volume percent of one of the said two materials, and from about 95 volume percent to about 5 volume percent of the other of the said two materials. A mixed region can further optionally comprise from about 0.01 volume percent to about 25 volume percent of a dopant material. In embodiments, a mixed region comprises from about 30 volume percent to about 70 volume percent of one of the said two materials, from about 70 volume percent to about 30 volume percent of the other of the said two materials, and can optionally further comprise from about 0.05 volume percent to about 10 volume percent of a dopant material. In other embodiments, a mixed region may comprise from about 40 volume percent to about 60 volume percent of one of the said two materials, from about 60 volume percent to about 40 volume percent of the other of the said two materials, and optionally from about 0.1 volume percent to about 2 volume percent of a dopant material. In other embodiments, a dopant material in a mixed region may be present in an amount from about 5 volume percent to about 20 volume percent.


Electroluminescent layer 60 can comprise at least one material capable of emitting light as a result of hole and electron recombination. The at least one material can be any fluorescent or phosphorescent material, or can be either one or both of the two materials having different electron and hole transport capacities. Alternatively, the at least one material capable of emitting light can be additional materials.


Electroluminescent layer 60 can comprise a fluorescent material. Illustrative examples of fluorescent materials include dyes selected, for example, from coumarin, dicyanomethylene pyranes, polymethine, oxabenzanthrane, xanthene, pyrylium, carbostyl, perylene, and quinacridone derivatives. Illustrative examples of quinacridone dyes include quinacridone, 2-methylquinacridone, 2,9-dimethylquinacridone, 2-chloroquinacridone, 2-fluoroquinacridone, 1,2-benzoquinacridone, N,N′-dimethylquinacridone, N,N′-dimethyl-2-methylquinacridone, N,N′-dimethyl-2,9-dimethylquinacridone, N,N′-dimethyl-2-chloroquinacridone, N,N′-dimethyl-2-fluoroquinacridone, N,N′-dimethyl-1,2-benzoquinacridone, and the like. The fluorescent component can be present in an amount of, for example, from about 0.01 to about 10 weight percent, such as from about 1 to about 5 weight percent of the layer.


Electroluminescent layer 60 can comprise a phosphorescent material such as, for example, organometallic compounds containing a heavy metal atom that leads to strong spin-orbit coupling, such as those disclosed in Baldo et al., “Highly efficient organic phosphorescent emission from organic electroluminescent devices”, Letters to Nature, 395, pp 151-154 (1998) (incorporated herein by reference in its entirety). Suitable non-limiting examples include 2,3,7,8,12,13,17,18-octaethyl-21H23H-phorpine platinum(II) (PtOEP) and tris(2-phenylpyridine)iridium.


In order to achieve a low driving voltage, the thickness of the electroluminescent layer can be from about 5 nm to about 50 nm. According to one embodiment, the thickness ranges from about 10 nm to about 40 nm. According to another embodiment, the thickness ranges from about 15 nm to about 30 nm.


The OLEDs disclosed herein can comprise an electron transport layer 70 comprising a triazine. There are a number of triazines suitable for forming electron transport layer 70. Suitable triazines include those disclosed in U.S. Pat. Nos. 6,225,467 and 6,229,012 (the disclosures of which are incorporated by reference herein). Non-limiting examples of suitable triazines include triphenyl triazine; 4,4′-bis[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl (T1); 2,4,6-tris(4-biphenyl)-1,3,5-triazine; 2,4,6-tris[4-(4′-methylbiphenyl)]-1,3,5-triazine; 2,4,6-tris[4-(4′-tert-butylbiphenyl)]-1,3,5-triazine; 2,4,6-tris[4-(3′,4′-dimethylbiphenyl)]-1,3,5-triazine; 2,4,6-tris[4-(4′-methoxybiphenyl)]-1,3,5-triazine; 2,4,6-tris[4-(3′-methoxybiphenyl)]-1,3,5-triazine; 2,4-bis(4-biphenylyl)-6-phenyl-1,3,5-triazine; 2,4-bis(4-biphenyl)-6-m-tolyl-1,3,5-triazine; 4,4′-bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4,6-di-p-tolyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4,6-di-m-tolyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4,6-di-p-methoxyphenyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4,6-di-m-methoxyphenyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4, β-naphthyl-6-phenyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4,4′-bis-[2-(4,6-di-biphenylyl-1,3,5-triazinyl)]-1,1′-biphenyl; 4-[2-(4,6-diphenyl-1,3,5-triazinyl)]-4′-[2-(4,6-di-m-tolyl-1,3,5-triazinyl)]-1,1′-biphenyl; 2,7-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]fluorine; 2,7-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]-9,9-dimethylfluorene; 2,7-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]-9,9-diethylfluorene; 2,7-bis-[2-(4,6-diphenyl-1,3,5-triazinyl)]-9,9-diphenylfluorene; 2,7-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]-9,10-dihydraphenanthrene; 4,9-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]dibenzofuran, 4,9-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]dibenzothiophene; 2,7-bis-[2-(4,6-di-phenyl-1,3,5-triazinyl)]-9,9-dimethyl-9-silafluorene; and the like. The electron transport layer can be composed entirely of the triazine, or it can include the triazine mixed with other materials. For example, the triazine can be doped with at least one of organic and inorganic materials, as described in U.S. patent application Ser. No. 11/122,290, filed on even date herewith (the disclosure of which is incorporated by reference herein). In certain embodiments, the electron transport layer 70 comprising a triazine can additionally comprise at least one of the electron transport materials disclosed to be useful in the electroluminescent layer 60. In certain embodiments, the electron transport layer 70 comprises the triazine in an amount of at least 50% by volume. In general, the thickness of the electron transport layer 70 ranges from about 1 nm to about 200 nm, such as from about 5 nm to about 100 nm, for example from about 20 nm to about 70 nm.


In various embodiments, the OLEDs include a cathode 80. The cathode 80 can comprise any suitable material such as a metal. The material can have high work function component, for example an eV of from about 4.0 eV to about 6.0 eV. The cathode can comprise a low work function component, such as metals with, for example, an eV of from about 2.5 eV to about 4.0 eV. The cathode can be derived from a combination of a low work function metal (about 4 eV, for example from about 2 eV to about 4 eV) and at least one other metal.


Effective proportions of the low work function metal to the second or additional metal are from less than about 0.1 percent to about 99.9 percent by weight. Illustrative examples of low work function metals include alkaline metals such as lithium or sodium, Group IIA or alkaline earth metals such as beryllium, magnesium, calcium, or barium, and Group III metals including rare earth metals and the actinide group metals such as scandium, yttrium, lanthanum, cerium, europium, terbium, or actinium. Lithium, magnesium and calcium are suitable low work function metals.


The thickness of cathode 80 can range from, for example, about 10 nm to about 500 nm. The Mg:Ag cathodes of U.S. Pat. No. 4,885,211 (the disclosure of which is incorporated herein by reference), constitute one suitable cathode construction. Another suitable cathode is described in U.S. Pat. No. 5,429,884 (the disclosure of which is totally incorporated herein by reference), wherein the cathode is formed from lithium alloys with other high work function metals such as aluminum and indium.


The OLEDs disclosed herein can be constructed by conventional methods. In various embodiments, a supporting substrate 20, such as glass, is provided. An anode 30 can be disposed over the glass and can be comprised of, for example, indium tin oxide in a thickness of from about 1 to about 500 nm, for example from about 30 to about 100 nm (throughout the disclosure, thickness ranges for each layer are provided as examples—other suitable thickness can be selected). A buffer layer 40 in contact with the anode can optionally be provided, and can be comprised of a conductive component or hole transport materials having a thickness of from about 5 to about 500 nm, for example from about 10 to about 100 nm. An organic hole transporting layer 50 can be disposed over the anode 30 or the buffer layer 40 and in a thickness of from about 1 to about 200, for example from about 5 to about 100 nm. An electroluminescent layer 60 can be provided in contact with the hole transporting layer 50. An electron transport layer 70 can be provided in contact with the electroluminescent layer 60 in a thickness of from about 5 to about 300 nm, for example from about 10 to about 100 nm. A cathode 80 comprising, e.g., a low work function metal can be in contact with the electron transporting layer 70.


According to the present disclosure, embodiments of the OLEDs disclosed herein can be operated under alternating current (AC) and/or direct current (DC) driving conditions. In some cases, AC driving conditions can be suitable to provide extended operational lifetimes, especially in high temperature device operating conditions. Suitable operating voltages are externally-applied driving voltages required to drive sufficient current to obtain a luminance of at least about 100 cd/m2, and typically a luminance of at least about 500 cd/m2, such as, for example a luminance of about 1000 cd/m2. Such voltages can range, for example, from about 0.5 volts to about 20 volts, such as from about 1 volt to about 15 volts. According to various embodiments, the operating voltage is less than about 6 volts, for example less than about 5.5 volts. Suitable driving currents range, for example, from about 1 to about 1000 mA/cm2, such as from about 10 mA/cm2 to about 200 mA/cm2, for example about 25 mA/cm2. Driving voltages and currents outside these ranges can also be used.


EXAMPLES

The following examples are illustrative and are non-limiting to the present teachings.


A group of organic light emitting devices was fabricated using physical vapor deposition. All devices comprised an indium tin oxide anode coated on a glass substrate and a Mg:Ag cathode. All devices had a three-layer light emitting region disposed between the anode and the cathode, which comprised hole transporting layers, electroluminescent layers and electron transporting layers of various compositions as described in the table below. Following fabrication, the devices were operated at a constant current of 25 mA/cm2. The driving voltage and brightness of each of the devices at this current were measured. The devices were then operated at a constant current of 31.25 mA/cm2, and the time elapsed before the luminance decreased to 50% of the initial luminance (Lo), denoted by t1/2, was measured. The half-life (t1/2) from an initial luminance of 500 cd/m2 was then calculated.

















Efficiency
Stability at




at 25 mA/cm2
31.25 mA/cm2





















Driving
CIE
Initial

Calculated t1/2 in hours


Device



Brightness
Voltage
Coordinates
Brightness
t1/2
for initial luminance


No.
HTL1
EL2
ETL3
(cd/m2)
(V)
(color)
(Lo) (cd/m2)
(hrs)
of 500 cd/m2



















1
NPB4 + 5%
BH25 + 2% BD26 (10 nm)
T1
576
4.46
0.200, 0.265
703
400
560



Rubrene (40 nm)

(45 nm)


(blue)


2
NPB + 5%
BH2 + T17 (9:1) + 2% BD2
T1
684
4.19
0.280, 0.346
830
700
1160



Rubrene (40 nm)
(10 nm)
(45 nm)


(white)


3
NPB + 5%
BH2 + T1(3:1) + 2%
T1
622
3.8
0.389, 0.451
1150
800
1840



Rubrene (40 nm)
BD2 (10 nm)
(45 nm)


(yellow)


4
NPB (40 nm)
AlQ38 + 2% Rubrene (10 nm)
T1
1230
3.62
0.480, 0.511
1580
150
475





(45 nm)


(yellow)


5
NPB (40 nm)
AlQ3 + NPB
AlQ3
790
5.7
0.478, 0.517







(1:1) + 2% Rubrene (10 nm)
(45 nm)


(yellow)


6
NPB (40 nm)
AlQ3 + NPB
T1
997
3.32
0.478, 0.518
1320
700
1850




(4:1) + 2% Rubrene (10 nm)
(45 nm)


(yellow)


7
NPB (40 nm)
AlQ3 + NPB
T1
793
3.03
0.466, 0.529
1360
500
1360




(1:1) + 2% Rubrene (10 nm)
(45 nm)


(yellow)


8
NPB (40 nm)
AlQ3 + NPB
T1
1330
3.6
0.466, 0.520
1570
350
1100




(1:1) + 2% Rubrene (10 nm)
(45 nm)


(yellow)


9
NPB (40 nm)
AlQ3 + NPB
T1
944
3.27
0.462, 0.530
1150
650
1500




(1:4) + 2% Rubrene (10 nm)
(45 nm)


(yellow)






1Hole transport layer




2Electroluminescent layer




3Electron transport layer




4N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene




52-t-butyl-9,10-di-(2-naphthyl) anthracene (also referred to as TBADN)




62,5,8,11-tetra-t-butylperylene




74,4′-bis[2-(4,6-diphenyl-1,3,5-triazinyl)]-1,1′-biphenyl




8tris(8-hydroxyquinoline) aluminum







Comparative devices 1 and 4 exhibit low stability since the electroluminescent layer contains only BI-12 and AIQ3, respectively, and no second host material. Comparative device 5 has a driving voltage exceeding 5V, likely because the electron transport layer does not comprise a triazine. By contrast, inventive devices 2, 3, and 6-9 have mixed electroluminescent layers, demonstrate a half life greater than 1000 hours, and have a driving voltage of less than 5V.


From the results, it is clear that unlike the comparative devices, OLEDs according to embodiments of the present invention can demonstrate both low driving voltage (less than 5 V) and sufficient operational stability (a half-life greater than 1000 hours for an initial brightness of at least 500 cd/m2. The embodiments can also be utilized in OLEDs of various compositions in order to obtain different devices with different emission colors.


For the purposes of this specification and appended claims, unless otherwise indicated, all numbers expressing quantities, percentages or proportions, and other numerical values used in the specification and claims, are to be understood as being modified in all instances by the term “about.” Accordingly, unless indicated to the contrary, the numerical parameters set forth in the following specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. At the very least, and not as an attempt to limit the application of the doctrine of equivalents to the scope of the claims, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.


It is noted that, as used in this specification and the appended claims, the singular forms “a,” “an,” and “the,” include plural referents unless expressly and unequivocally limited to one referent. Thus, for example, reference to “a dopant” includes two or more dopants. As used herein, the term “include” and its grammatical variants are intended to be non-limiting, such that recitation of items in a list is not to the exclusion of other like items that can be substituted or added to the listed items.


While particular embodiments have been described, alternatives, modifications, variations, improvements, and substantial equivalents that are or may be presently unforeseen may arise to applicants or others skilled in the art. Accordingly, the appended claims as filed and as they may be amended are intended to embrace all such alternatives, modifications variations, improvements, and substantial equivalents.

Claims
  • 1. A display comprising at least one organic light emitting device comprising: (a) an anode;(b) a hole transport layer adjacent to and in contact with the anode, the hole transport layer including N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene;(c) an electroluminescent material layer comprising at least two materials having different electron and hole transport capacities;(d) an electron transport layer is composed entirely of 4,4′-bis[2-(4,6-diphenyl-1,3,4-triazinyl)]-1,1′-biphenyl; and(e) a cathode,wherein said electroluminescent material layer has a thickness of less than 50 nm and wherein said device is capable of having an operational stability characterized by a half life of at least 1000 hours at an initial brightness of at least 500 cd/m2 by operating at a driving voltage of less than 5V at a current density of at least 20 mA/cm2,wherein the electroluminescent material layer consists essentially of tris(8-hydroxyquinoline) aluminum, N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene, rubrene and at least one of fluorescent and phosphorescent materials.
US Referenced Citations (126)
Number Name Date Kind
2832905 Clay Apr 1958 A
3172862 Gurnee et al. Mar 1965 A
3598644 Goffe et al. Aug 1971 A
4084966 Haas et al. Apr 1978 A
4287449 Takeda et al. Sep 1981 A
4356429 Tang Oct 1982 A
4539507 VanSlyke et al. Sep 1985 A
4652794 Waite et al. Mar 1987 A
4665115 Lundberg et al. May 1987 A
4720432 VanSlyke et al. Jan 1988 A
4769292 Tang et al. Sep 1988 A
4885211 Tang et al. Dec 1989 A
5049780 Dobrowolski et al. Sep 1991 A
5059861 Littman et al. Oct 1991 A
5141671 Bryan et al. Aug 1992 A
5150006 Van Slyke et al. Sep 1992 A
5151629 VanSlyke Sep 1992 A
5227252 Murayama et al. Jul 1993 A
5247190 Friend et al. Sep 1993 A
5276381 Wakimoto et al. Jan 1994 A
5409783 Tang et al. Apr 1995 A
5429884 Namiki et al. Jul 1995 A
5457565 Namiki et al. Oct 1995 A
5516577 Matsuura et al. May 1996 A
5593788 Shi et al. Jan 1997 A
5601903 Fujii et al. Feb 1997 A
5608287 Hung et al. Mar 1997 A
5703436 Forrest et al. Dec 1997 A
5707745 Forrest et al. Jan 1998 A
5719467 Antoniadis et al. Feb 1998 A
5728801 Wu et al. Mar 1998 A
5739635 Wakimoto Apr 1998 A
5776622 Hung et al. Jul 1998 A
5837391 Utsugi Nov 1998 A
5846666 Hu et al. Dec 1998 A
5853905 So et al. Dec 1998 A
5925472 Hu et al. Jul 1999 A
5925980 So et al. Jul 1999 A
5935720 Chen et al. Aug 1999 A
5935721 Shi et al. Aug 1999 A
5942340 Hu et al. Aug 1999 A
5952115 Hu et al. Sep 1999 A
5955836 Boerner et al. Sep 1999 A
5972247 Shi et al. Oct 1999 A
6013384 Kido et al. Jan 2000 A
6023073 Strite Feb 2000 A
6028327 Mizoguchi et al. Feb 2000 A
6057048 Hu et al. May 2000 A
6105202 Grasso et al. Aug 2000 A
6107734 Tanaka et al. Aug 2000 A
6130001 Shi et al. Oct 2000 A
6225467 Esteghamatian et al. May 2001 B1
6229012 Hu et al. May 2001 B1
6274980 Burrows et al. Aug 2001 B1
6303250 Watanabe et al. Oct 2001 B1
6392250 Aziz et al. May 2002 B1
6392339 Aziz May 2002 B1
6423429 Kido et al. Jul 2002 B2
6437123 Bock et al. Aug 2002 B1
6465115 Shi et al. Oct 2002 B2
6479172 Hu et al. Nov 2002 B2
6562485 Hu et al. May 2003 B2
6565996 Hatwar et al. May 2003 B2
6614175 Aziz et al. Sep 2003 B2
6639357 Parthasarathy et al. Oct 2003 B1
6717358 Liao et al. Apr 2004 B1
6734625 Vong et al. May 2004 B2
6737177 Aziz et al. May 2004 B2
6740429 Aziz et al. May 2004 B2
6750609 Aziz et al. Jun 2004 B2
6753098 Aziz et al. Jun 2004 B2
6759146 Aziz et al. Jul 2004 B2
6765348 Aziz et al. Jul 2004 B2
6773830 Aziz et al. Aug 2004 B2
6821643 Hu et al. Nov 2004 B1
6841932 Aziz et al. Jan 2005 B2
7083490 Mueller et al. Aug 2006 B2
7211948 Liao et al May 2007 B2
7288887 Aziz et al. Oct 2007 B2
7291404 Aziz et al. Nov 2007 B2
7351999 Li Apr 2008 B2
7420203 Tsutsui et al. Sep 2008 B2
7473923 Tsutsui et al. Jan 2009 B2
20020037398 Tofuku et al. Mar 2002 A1
20020121860 Seo et al. Sep 2002 A1
20020135296 Aziz et al. Sep 2002 A1
20020136922 Sakai et al. Sep 2002 A1
20020145380 Aziz et al. Oct 2002 A1
20020180349 Aziz et al. Dec 2002 A1
20030071565 Hatwar et al. Apr 2003 A1
20030087125 Aziz et al. May 2003 A1
20030116772 Yammazaki et al. Jun 2003 A1
20030127967 Tsutsui et al. Jul 2003 A1
20030134146 Aziz et al. Jul 2003 A1
20030170491 Liao et al. Sep 2003 A1
20030189401 Kido et al. Oct 2003 A1
20030230974 Chang et al. Dec 2003 A1
20030234609 Aziz et al. Dec 2003 A1
20040004433 Lamansky et al. Jan 2004 A1
20040009418 Main et al. Jan 2004 A1
20040018383 Aziz et al. Jan 2004 A1
20040027059 Tsutsui Feb 2004 A1
20040209184 Hatakeyama et al. Oct 2004 A1
20040227460 Liao et al. Nov 2004 A1
20040262615 Cok Dec 2004 A1
20050064235 Liao et al. Mar 2005 A1
20050088083 Seo et al. Apr 2005 A1
20050100760 Yokoyama May 2005 A1
20050112400 Seo et al. May 2005 A1
20050140275 Park Jun 2005 A1
20050175857 Coggan et al. Aug 2005 A1
20060105202 Kitamura May 2006 A1
20060139516 Park Jun 2006 A1
20060139893 Yoshimura et al. Jun 2006 A1
20060194076 Nariyuki Aug 2006 A1
20060204783 Conley et al. Sep 2006 A1
20060251919 Aziz et al. Nov 2006 A1
20060251920 Aziz et al. Nov 2006 A1
20060261727 Aziz et al. Nov 2006 A1
20060261731 Aziz et al. Nov 2006 A1
20060263593 Aziz et al. Nov 2006 A1
20060263628 Aziz et al. Nov 2006 A1
20060263629 Aziz et al. Nov 2006 A1
20060265278 Dimeo Nov 2006 A1
20070182317 Kido et al. Aug 2007 A1
20090045738 Tsutsui et al. Feb 2009 A1
Foreign Referenced Citations (52)
Number Date Country
0 831 676 Mar 1998 EP
0855848 Jul 1998 EP
09 77 287 Feb 2000 EP
09 772 88 Feb 2000 EP
1 009 044 Jun 2000 EP
1010359 Jun 2000 EP
1017118 Jul 2000 EP
1 029 832 Aug 2000 EP
1 160 890 Dec 2001 EP
1167488 Jan 2002 EP
1 311 139 May 2003 EP
1311139 May 2003 EP
1 339 112 Aug 2003 EP
1 408 563 Apr 2004 EP
1 624 503 Feb 2006 EP
1 624 504 Feb 2006 EP
1 010 359 Apr 2006 EP
04-230997 Aug 1992 JP
1993-217675 Aug 1993 JP
06-176870 Jun 1994 JP
8-222374 Aug 1996 JP
09-188875 Jul 1997 JP
10-316904 Dec 1998 JP
11-312584 Nov 1999 JP
11-329749 Nov 1999 JP
2002-055203 Feb 2002 JP
2003-045676 Feb 2003 JP
2003-086381 Mar 2003 JP
2003-151777 May 2003 JP
2004-039617 Feb 2004 JP
2004-095546 Mar 2004 JP
2004-139981 May 2004 JP
2004-317897 Nov 2004 JP
2005-070574 Mar 2005 JP
2005-072012 Mar 2005 JP
2006-173550 Jun 2006 JP
2006-210845 Aug 2006 JP
WO 9619792 Jun 1996 WO
WO 9733296 Sep 1997 WO
WO 9841065 Sep 1998 WO
WO 9903158 Jan 1999 WO
WO 0030139 May 2000 WO
WO 0106816 Jan 2001 WO
WO 0108240 Feb 2001 WO
WO 03055275 Jul 2003 WO
WO 03088718 Oct 2003 WO
WO2004068911 Aug 2004 WO
WO 2005037954 Apr 2005 WO
WO 2006033472 Mar 2006 WO
WO 2006038573 Apr 2006 WO
WO 2006076092 Jul 2006 WO
WO 2006076092 Jul 2006 WO
Non-Patent Literature Citations (35)
Entry
Liu et al., Current Applied Physics, (2005), vol. 5, pp. 218-221.
So et al., PS-C21, The Seventh International Symposium on Functional Electron Systems (2007). downloaded from the internet Jan. 16, 2010.
Matsushima et al., Current Applied Physics, (2005), vol. 5, pp. 305-308.
Webster's New World Dictionary, College Edition, (1962), p. 18.
Aziz et al., “Reduced reflectance cathode for organic light-emitting devices using metal organic mixtures”, Applied Physics Letters, vol. 83, No. 1, pp. 186-188 (2003).
Day et al., “The use of charge transfer interlayers to control hole injection in molecular organic light emitting diodes”, Thin Solid Films, vol. 410, pp. 159-166 (Mar. 2002).
A. Gyoutoku et al., “An Organic Electroluminescent Dot-Matrix Display Using Carbon Underlayer”, Synthetic Metals, vol. 91, pp. 73-75 (1997).
Baldo et al., “Highly efficient phosphorescent emission from organic electroluminescent devices,” Letters to Nature, vol. 395, pp. 151-154 (1998).
Bernius et al., “Developmental Progress of Electroluminescent Polymeric Materials and Devices” Proceedings of SPIE Conference on Organic Light Emitting Materials and Devices III, Denver, Colo., vol. 3797, p. 129-137 (Jul. 1999).
Carter et al., “Polymeric anodes for improved polymer light-emitting diode performance”, Appl. Phys. Lett. 70 (16), pp. 2067-2069 (Apr. 21, 1997).
Chengfeng Qiu et al., Comparative Study of Metal or Oxide Capped Indium-Tin Oxide Anodes for Organic Light-Emitting Diodes, Journal of Applied Physics, vol. 93, No. 6 pp. 3253-3257 (Mar. 15, 2003).
Chengfeng Qiu et al., “Praseodymium Oxide Coated Anode for Organic Light-Emitting Diode”, Applied Physics Letters, vol. 80, No. 19, pp. 3485-3487 (May 13, 2002).
Chieh-Wei Chen et al., “Top-Emitting Organic Light-Emitting Devices Using Surface-Modified Ag Anode,” Applied Physics Letters, vol. 83, No. 25, pp. 5127-5129 (Dec. 22, 2003).
Endo et al., “Organic Electroluminescent Devices with a Vacuum-Deposited Lewis-Acid-Doped Hole-Injecting Layer”, Japanese Journal of Applied Physics, vol. 41, pp. L358-L360 (Mar. 2002).
Gardin et al., “Light-Absorption Phenomena in Novel Low-Reflectance Cathodes for Organic Light-Emitting Devices Utilizing Metal-Organic Mixtures”, Advanced Materials, vol. 15, No. 23, pp. 2021-2024 (Dec. 2003).
Hongjin Jiang et al., “Improvement of Organic Light-Emitting Diodes Performance by the Insertion of a Si3N4 Layer”, Thin Solid Films, vol. 363, pp. 25-29 (2000).
Hyun-Ouk Ha et al., “Improving the efficiency of organic electroluminescent devices by introducing an electron-accepting and thermally stable polymer”, Optical Materials, vol. 21 pp. 165-168 (2002).
I-Min Chan et al., “Enhanced Hole Injections in Organic Light-Emitting Devices by Depositing Nickel Oxide on Indium Tin Oxide Anode,” Applied Physics Letters, vol. 81, No. 10, pp. 1899-1901 (Sep. 2, 2002).
Kido et al., “White-Light-Emitting Organic Electroluminescent Device Using Lanthanide Complexes,” Jpn. J. Appl. Phys., vol. 35, pp. L394-L396 (1996).
Kim et al., “Anode material based on Zr-doped ZnO thin films for organic light-emitting diodes”, Appl. Phys. Lett., vol. 83, No. 18, pp. 3809-3811 (Nov. 3, 2003).
Kim et al., “Molecular organic light-emitting diodes using highly conducting polymers as anodes”, Appl. Phys. Lett., vol. 80 No. 20, pp. 3844-3846 (May 20, 2002).
L.S. Hung et al., “Anode Modification of in Organic Light-Emitting Diodes by Low-Frequency Plasma Polymerization of CHF3”, Applied Physics Letters, vol. 78, No. 5, pp. 673-675 (Jan. 29, 2001).
Liu et al., “Development of highly stable organic electroluminescent devices with a doped co-host emitter system”, Current Applied Physics 5, pp. 218-221 (2005).
S. A. VanSlyke et al., “Organic Electroluminescent Devices with Improved Stability”, Applied Physics Letters, vol. 69, No. 15, pp. 2160-2162 (Oct. 7, 1996).
S. Karg et al., “Increased Brightness and Lifetime of Polymer Light Emitting Diodes with Polyanilne Anodes”, Synthetic Metals, vol. 80, pp. 111-117 (1996).
Soo-Jin Chua et al., “Stabilization of Electrode Migration in Polymer Electroluminescent Devices”, Applied Physics Letters, vol. 81, No. 6, pp. 1119-1121 (Aug. 5, 2002).
Wenping Hu et al., “Lowering of Operational Voltage of Organic Electroluminescent Devices by Coating Indium Tin Oxide Electrodes with a Thin CuOx Layer”, Applied Physics Letters, vol. 80, No. 15, pp. 2640-2641 (Apr. 15, 2002).
Yulong Shen et al., “Modification of Indium Tin Oxide for Improved Hole Injection in Organic Light Emitting Diodes,” Advanced Materials, vol. 13, No. 16 pp. 1234-1238 (Aug. 16, 2001).
Z.B. Deng et al., “Enhanced Brightness and Efficiency in Organic Electroluminescent Devices Using SiO2 Buffer Layers”, Applied Physics Letters, vol. 74, No. 15, pp. 2227-2229 (Apr. 12, 1999).
Zugang et al., “Organic thin film electroluminescent devices with ZnO:A1 as the anode”, J. Phys.: Condens. Matter 8, pp. 3221-3228 (1996).
Choong et al.; “Organic Light Emitting Diodes With a Bipolar Transport Layer”; Applied Physics Letters; vol. 75, No. 2, Jul. 12, 1999, pp. 172-174.
Matsumoto, Toshio et al., Multiphoton Emission OLED: Structure and Property, IDW'03; Dec. 2003, pp. 1285-1288.
Welying Gao; Controlled p doping of the hole-transport molecular material N,N'=diphenyl-N,N'-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine with Terafluorotetracyanoquinodimethane, Journal of Applied Physics, vol. 94, No. 1 (Jul. 1, 2003), pp. 359-366.
H. Michelle Grandia et al.; Light-Absorption Phenomena in Novel Low-Reflective Cathodes for Organic Light-Emitting Devices Utilizing Metal-Organic Mixtures; Advanced Materials, 2003, 15, No. 23; pp. 2021-2024.
J. Blochwitz et al., “Non-Polymeric OLEDs with a Doped Amorphous Hole Transport Layer and Operating Voltages Down to 3.2 V to Achieve 100 cd/m2”, Synthetic Metals, 2002, vol. 127; pp. 169-173.
Related Publications (1)
Number Date Country
20060251919 A1 Nov 2006 US