This application claims the priority benefit of Taiwan application serial no. 95140536, filed Nov. 2, 2006. All disclosure of the Taiwan application is incorporated herein by reference.
1. Field of Invention
The present invention relates to a driving device. More particularly, the present invention relates to an organic light emitting diode (OLED) driving device.
2. Description of Related Art
The conventional circuit design is using the transistor 102 to compensate the effect of the threshold voltage of the transistor 105. The threshold voltages of the transistor 102 and the transistor 105 are respectively Vth-102 and Vth-105, the current flowing through the transistor 105 is I, and k is a proportional constant. Thus, the following relation can be obtained:
I=(k/2)*(Vdata−|Vth-102|−VDD+|Vth-105|)2
Under ideal conditions, the threshold voltage Vth-102 of the transistor 102 is identical to the threshold voltage Vth-105 of the transistor 105, and thus the following relation can be obtained:
I=(k/2)*(Vdata−VDD)2
It may be known from this relation that, the current I is not affected by the threshold voltages. However, the disadvantage of the conventional circuit is the mechanism of using the data signal Vdata to discharge the storage capacitor 104. If the voltage at the node n1 is close to that of the data signal Vdata, charges of the storage capacitor 104 cannot be completely released. Moreover, the charging mechanism cannot be adapted for integrated circuits with operating voltages of different specifications.
The object of the present invention is to provide an OLED driving device, which can improve the display quality of an OLED, effectively release charges of the storage capacitor, change the level of the input voltage to match integrated circuits with operating voltages of different specifications, and can be fabricated by low temperature poly silicon process or amorphous silicon process.
The present invention provides an OLED driving device, comprising a first switch, a first transistor, a second switch, a capacitor and a second transistor. One end of the first switch is used to receive a data signal, and output the data signal to a first end of the first transistor via the control of a first scan signal. A control end of the first transistor is electrically connected to a second end of itself, thus the first transistor is equivalent to a virtual diode structure for compensating a threshold voltage of the second transistor. The second switch is used to receive a voltage signal and output the voltage signal via the control of a second scan signal. One end of the capacitor is electrically connected to the second switch and the other end of the capacitor is connected to the second end of the first transistor, for storing the data voltage. A control end of the second transistor is electrically connected to the second end of the first transistor and the other end of the capacitor, for generating a driving current input to a third switch. The third switch is used to prevent the OLED from improperly emitting light. The third switch outputs the driving current via the control of the second scan signal.
According to the OLED driving device described by preferred embodiments of the present invention, the above-mentioned third switch is electrically connected to one end of the OLED, and the other end of the OLED is electrically connected to a second reference voltage. The first switch, the second switch and the third switch are respectively the third transistor, the fourth transistor and the fifth transistor. The OLED driving device can be fabricated by low temperature poly silicon process or amorphous silicon process.
By adopting the second switch to introduce the voltage signal into the capacitor, the present invention can effectively release charges of the storage capacitor, improve the display quality of the OLED, and change the level of the input voltage to match integrated circuits with operating voltages of different specifications. The circuit design of the present invention is suitable for low temperature poly silicon process or amorphous silicon process.
In order to the make aforementioned and other objects, features and advantages of the present invention more comprehensible, preferred embodiments accompanied with figures are described in detail below.
The storage capacitor C1 is used to store the data voltage. An end U1 of the storage capacitor C1 is electrically connected to the second switch transistor 302, and an end U2 of the storage capacitor C1 is electrically connected to the first transistor M2. An end of the second switch transistor 302 is used to receive a voltage signal VA1. The second switch transistor 302 receives a second scan signal SCANX1 and outputs the voltage signal VA1 to the storage capacitor C1 under the control of the second scan signal SCANX1. The second switch transistor 302 may be implemented by the P-type MOS fourth transistor M3. This embodiment employs the voltage signal VA1 to effectively release charges of the storage capacitor C1. Due to variable factors of manufacturing process, temperature, etc., the changing of the threshold voltage influences the driving current output by the second transistor M4. The circuit design of this embodiment improves the circuit stability by compensating the influence of the threshold voltage. The control end of the second transistor M4 receives the data voltage of the storage capacitor C1 to output a driving current. An end of the second transistor M4 is electrically connected to the first reference voltage Vdd, and the other end is electrically connected to the third switch transistor 303. The third switch transistor 303 is electrically connected to the OLED D1. A second scan signal SCANX1 is used to control the third switch transistor 303 to determine whether the driving current of the second transistor M4 is input to the positive end of the OLED D1, and the negative end of the OLED D1 is electrically connected to the second reference voltage GND, which is a ground voltage. The ON/OFF operations of the third switch transistor 303 are used to prevent the OLED D1 from emitting light improperly. The third switch transistor 303 may be implemented by the P-type MOS fifth transistor M5.
The time period T42˜T43 is a writing period for the data voltage. During this period, the first scan signal SCAN1 is at the low voltage level. The third transistor M1 is turned on. The second scan signal SCANX1 is at the high voltage level. The fourth transistor M3 and the fifth transistor M5 are turned off, whose main purpose is writing the voltage of the data signal Vdata into the storage capacitor C1. The control end of the first transistor M2 is electrically connected to the output end of itself so that M2 is equivalent to a diode, and thus, the voltage at the end U2 of the storage capacitor C1 is (Vdata−Vth-M2), where Vth-M2 is the threshold voltage of the first transistor M2. The time period T43˜T44 is the light-emitting period of the OLED. The second scan signal SCANX turns on the fourth transistor M3 and the fifth transistor M5. Vth-M5 is the threshold voltage of the fifth transistor M5, and Id is the driving current, with reference to the following relation:
Id=(k/2)*(Vdata1−|Vth-M2|−Vdd+|Vth-M5|)2
The design principle of this embodiment is that, the threshold voltage Vth-M2 of the first transistor M2 is equal to the threshold voltage Vth-M4 of the second transistor M4, such that the following relation is obtained:
Id=(I/2)*(Vdata1−Vdd)2
Thus, the luminosity of the OLED D1 is in direct proportion to Id, and is not related to the variance of the threshold voltage of the second transistor M4.
In the OLED driving device of the above-mentioned embodiments, the transistors may be implemented by thin film transistors, which are suitable for the low temperature poly silicon process and the amorphous silicon process. The transistor of the above-mentioned OLED driving device may employ an all P-type MOS process or an all N-type MOS process. In addition, the device for generating the first scan signal, the second scan signal, and the voltage signal may employ an all P-type MOS process or an all N-type MOS process, together with the manufacturing process of the OLED, so as to save manufacturing costs, unify the process, improve yields and reduce variations.
In summary, the OLED driving device of the present invention adopts a mechanism of using the voltage signal to control the storage capacitor via the switch transistor, therefore the present invention can improve the display quality of the OLED, effectively release the charges of the storage capacitor, change the level of the input voltage to match integrated circuits with operating voltages of different specifications, and can be fabricated by low temperature poly silicon process or amorphous silicon process.
Though the present invention has been disclosed above by the preferred embodiments, it is not intended to limit the invention. Anybody skilled in the art can make some modifications and variations without departing from the spirit and scope of the invention. Therefore, the protecting range of the invention falls in the appended claims.
Number | Date | Country | Kind |
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95140536 A | Nov 2006 | TW | national |
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Number | Date | Country | |
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20080106504 A1 | May 2008 | US |