Organic light emitting display device and a method of manufacturing thereof

Abstract

Disclosed is an organic light emitting display device including a first substrate defining a pixel region and a non-pixel region. An organic light emitting element comprising a first electrode, an organic thin film layer and a second electrode are formed in the pixel region. A scan driver is formed in the non-pixel region. A second substrate is sealed spaced apart from the pixel region and the non-pixel region of the first substrate. A frit is formed along an edge of a non-pixel region of the second substrate, wherein the frit is formed so that it can be overlapped with a region excluding an active area of the scan driver formed in the non-pixel region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

These and other aspects and advantages of the invention will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a plane view showing an organic light emitting display device according to the prior art;

FIG. 2 is a cross-sectional view taken from a line I-I′ of the FIG. 1;

FIG. 3 is a plane view showing one embodiment of an organic light emitting display device according to the invention;

FIG. 4 is a cross-sectional view taken from a line II-II′ of the FIG. 3; and

FIG. 5 is a cross-sectional view taken from a line III-III′ of the FIG. 3.

FIG. 6 is a schematic exploded view of a passive matrix type organic light emitting display device in accordance with one embodiment.

FIG. 7 is a schematic exploded view of an active matrix type organic light emitting display device in accordance with one embodiment.

FIG. 8 is a schematic top plan view of an organic light emitting display in accordance with one embodiment.

FIG. 9 is a cross-sectional view of the organic light emitting display of FIG. 8, taken along the line 9-9.

FIG. 10 is a schematic perspective view illustrating mass production of organic light emitting devices in accordance with one embodiment.

Claims

1. An organic light emitting device comprising: a first substrate defining a pixel region and a non-pixel region;an array of organic light emitting pixels formed over the pixel region of the first substrate;a second substrate placed over the first substrate, the array being interposed between the first and second substrates;a frit seal comprising a plurality of elongated segments interposed between the first and second substrates, the plurality of elongated segments in combination surrounding the array such that the array is encapsulated by the first substrate, the second substrate and the frit seal, the plurality of elongated segments comprising a first elongated segment elongated generally in a first direction; anda scan driver formed over the non-pixel region and comprising a semiconductive integrated circuit portion, wherein the semiconductive integrated circuit portion and the first elongated segment extend generally parallel to each other without any one of the plurality of elongated segments interposed therebetween when viewed in a second direction from the first or second substrate, wherein the second direction defines the shortest distance between the first and second substrates, and wherein the first elongated segment does not substantially overlap with the semiconductive integrated circuit portion when viewed in the second direction from the first or second substrate.

2. The device of claim 1, wherein the semiconductive integrated circuit portion comprises interconnected semiconductive circuit elements.

3. The device of claim 2, wherein the semiconductive circuit elements comprise thin film transistors.

4. The device of claim 1, further comprising a planarization layer formed between the first substrate and the frit, and wherein the scan driver is substantially buried in the planarization layer.

5. The device of claim 1, wherein the scan driver comprises non-semiconductive integrated circuit portion, which overlaps with the first elongated segment when viewed in the second direction from the first or second substrate,

6. The device of claim 1, wherein the semiconductive integrated circuit portion has a width defined in a third direction perpendicular to the first and second directions, and wherein there is a gap in the third direction between the semiconductive integrated circuit portion and the first elongated segment when viewed in the second direction from the first or second substrate, and wherein the gap is smaller than about the width.

7. The device of claim 5, wherein the width is from about 0.02 mm to about 0.5 mm.

8. The device of claim 5, wherein the gap is smaller than about 0.2 mm.

9. The device of claim 5, wherein the gap is smaller than about half the width.

10. The device of claim 1, wherein the semiconductive integrated circuit portion and the first elongated segment have substantially no gap in the third direction when viewed in the second direction from the first or second substrate.

11. The device of claim 1, further comprising a signal line portion, wherein the signal line portion comprises a plurality of conductive lines interconnecting the scan driver and the array, and wherein the first elongated segment overlaps with the signal line portion when viewed in the second direction from the first or second substrate.

12. The device of claim 11, wherein the scan driver comprises a routing portion interposed between the semiconductive integrated circuit portion and the signal line portion, and wherein the first elongated segment overlaps with the routing portion when viewed in the second direction from the first or second substrate.

13. The device of claim 1, wherein the frit seal comprises one or more materials selected from the group consisting of magnesium oxide (MgO), calcium oxide (CaO), barium oxide (BaO), lithium oxide (Li2O), sodium oxide (Na2O), potassium oxide (K2O), boron oxide (B2O3), vanadium oxide (V2O5), zinc oxide (ZnO), tellurium oxide (TeO2), aluminum oxide (Al2O3), silicon dioxide (SiO2), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P2O5), ruthenium oxide (Ru2O), rubidium oxide (Rb2O), rhodium oxide (Rh2O), ferrite oxide (Fe2O3), copper oxide (CuO), titanium oxide (TiO2), tungsten oxide (WO3), bismuth oxide (Bi2O3), antimony oxide (Sb2O3), lead-borate glass, tin-phosphate glass, vanadate glass, and borosilicate.

14. A method of making an organic light emitting device, the method comprising: providing a first substrate defining a pixel region and a non-pixel region;forming an array of organic light emitting pixels over the pixel region of the first substrate;forming a scan driver over the non-pixel region of the first substrate;arranging a second substrate over the first substrate such that the array being interposed between the first and second substrates;interposing a frit comprising a plurality of elongated segments between the first substrate and second substrate, the plurality of elongated segments in combination surrounding the array, and the plurality of elongated segments comprising a first elongated segment elongated generally in a first direction; andwherein the scan driver comprises a semiconductive integrated circuit portion, wherein the semiconductive integrated circuit portion and the first elongated segment extend generally parallel to each other without any one of the plurality of elongated segments interposed therebetween when viewed in a second direction from the first or second substrate, wherein the second direction defines the shortest distance between the first and second substrates, and wherein the first elongated segment does not substantially overlap with the semiconductive integrated circuit portion when viewed in the second direction from the first or second substrate.

15. The method of claim 14, wherein the semiconductive integrated circuit portion comprises interconnected semiconductive circuit elements.

16. The device of claim 14, wherein the semiconductive circuit elements comprise thin film transistors.

17. The method of claim 14, wherein the scan driver overlaps with the first elongated segment when viewed in the second direction from the first or second substrate,

18. The method of claim 14, wherein the semiconductive integrated circuit portion of the scan driver has a width defined in a third direction perpendicular to the first and second directions, wherein there is a gap in the third direction between the semiconductive integrated circuit portion the scan driver and the first elongated segment, and wherein the gap is smaller than about the width of the scan driver.