This application claims the benefit of Korean Patent Application No. 10-2013-0138238 filed on Nov. 14, 2013, which is hereby incorporated by reference for all purposes as if fully set forth herein.
1. Field of the Invention
The present invention relates to an organic light-emitting display device and operating method thereof.
2. Description of Related Art
Recently, organic light-emitting display devices have been in the spotlight as the next generation display devices. Organic light-emitting display devices use organic light-emitting diodes (OLEDs) that emit light by themselves, and have advantages such as relatively fast response speed, high levels of light emitting efficiency and luminance, as well as wide viewing angles.
Such an organic light-emitting display device has a structure in which pixels including organic light-emitting diodes are arranged in a matrix form, and the brightness of pixels may be controlled through the selection of a scanning signal according to the grayscale data.
Each pixel in such an organic light-emitting display device has a structure in which an organic light-emitting diode, a driving transistor for driving the organic light-emitting diode, a storage capacitor and the like are connected to various signal lines.
Since a conventional pixel structure requires a reference voltage line for initializing a source node (or a drain node) of the driving transistor, the reference voltage line is formed in a display panel for each pixel and is directly connected to respective data driving integrated circuits.
As a result, a problem may occur in which an aperture ratio of the display panel is reduced, as the number of contacts of the data integrated circuits is increased.
Accordingly, the present invention is directed to an organic light-emitting display device and operating method thereof that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An advantage of the present invention is to provide an organic light-emitting display device having a novel pixel structure with a high aperture ratio and an operating method thereof.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. These and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, an organic light-emitting display device may, for example, include a display panel including a plurality of data lines, a plurality of first gate lines and a plurality of second gate lines, which define a plurality of pixels; a data driver supplying a data signal through at least one of the plurality of data lines; a first gate driver supplying a sensing signal through at least one of the plurality of first gate lines that cross the plurality of data lines in the display panel; a second gate driver supplying a scanning signal through at least one of the plurality of second gate lines that are substantially parallel with the plurality of first gate lines in the display panel; and a timing controller controlling driving timings of the data driver, the first gate driver and the second gate driver, wherein one of the plurality of pixels includes an organic light-emitting diode, a driving transistor having a first node, a second node and a third node, a first transistor controlled by the sensing signal and connected between the respective data line and the first node of the driving transistor, a second transistor controlled by the scanning signal and connected between the respective data line and the second node of the driving transistor, and a storage capacitor connected between the first and second nodes of the driving transistor.
In another aspect of the present invention, an organic light-emitting display device may, for example, include an organic light-emitting diode (OLED); a first transistor controlled by a sensing signal and connected to a data line; a second transistor controlled by a scanning signal and connected to the data line; and a driving transistor having a first node to which a reference voltage is applied through the first transistor, a second node to which a data voltage is applied through the second transistor, and a third node connected to a driving voltage line.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The same reference numbers may be used throughout the drawings to refer to the same or like parts. Detailed descriptions of known functions and components incorporated herein may be omitted.
Although terms such as “first,” “second,” “A,” “B,” “(a)” and “(b)” may be used herein to describe various elements, such terms may be used to distinguish one element from another element. The substance, sequence, order or number of these elements may not be limited by these terms. When an element is referred to as being “connected to” or “coupled to” another element, not only can it be “directly connected” or “coupled to” the other element, but it also can be “indirectly connected or coupled to” the other element via an “intervening” element(s). Also, when an element is referred to as being formed “on” or “under” another element, not only can it be directly formed on or under another element, but it also can be indirectly formed on or under another element via an intervening element(s).
Referring to
The first gate driver 130 and the second gate driver 140 may be separately provided, and may also be included in one gate driver as desired.
The first gate driver 130 may be positioned only at one side of the display panel 110 as illustrated in
Each of the first gate driver 130 and the second gate driver 140 may include a plurality of gate driving integrated circuits. Such gate driving integrated circuits may be connected to bonding pads of the display panel 110 by using a tape automated bonding (TAB) method or a chip on glass (COG) method, or may be provided in a gate in panel (GIP) type directly formed on the display panel 110. Furthermore, the first gate driver 130 and the second gate driver 140 may be integrated with the display panel 110.
The data driver 120 may include a plurality of data driving integrated circuits (also referred to as source driving integrated circuits). Such data driving integrated circuits may be connected to bonding pads of the display panel 110 by using the tape automated bonding (TAB) method or the chip on glass (COG) method, or may be directly formed on the display panel 110. Furthermore, the data driver 120 may be integrated with the display panel 110.
The reference voltage supply unit 160 may be connected to the data driving integrated circuit D-IC of the data driver 120, and may supply the reference voltage Vref to a reference voltage line RVL formed on the display panel 110 through the data driving integrated circuit D-IC.
A pixel structure of each pixel P defined in the display panel 110 of the organic light-emitting display device 100 according to an exemplary embodiment will be described with reference to
Referring to
The driving transistor DT in each pixel P is a transistor that receives a driving voltage EVDD supplied by a driving voltage line DVL, is controlled by a voltage (a data voltage) of the second node N2, which is applied through the second transistor T2, and drives the organic light-emitting diode (OLED).
The driving transistor DT has the first node N1, the second node N2 and the third node N3, wherein the first node N1 is connected to the first transistor T1, the second node N2 is connected to the second transistor T2, and the third node N3 receives the driving voltage EVDD.
The first node of the driving transistor DT may be referred to as a source node (also referred to as a “source electrode”), the second node may be referred to as a gate node (also referred to as a “gate electrode”), and the third node N3 may be referred to as a drain node (also referred to as a “drain electrode”). The first node and the third node of the driving transistor DT may also be a drain node and a source node depending on a circuit implementation scheme or a circuit state.
The first transistor T1 is a transistor that is controlled by the sensing signal SENSE supplied by the first gate line GL1, is connected between the reference voltage line RVL supplying the reference voltage Vref or a connection pattern CP connected to the reference voltage line and the first node N1 of the driving transistor DT, and is concerned in a sensing mode, and is also referred to as a “sensor transistor.”
The second transistor T2 is a transistor that is controlled by the scanning signal SCAN supplied by the second gate line GL2, is connected between a corresponding data line DL and the second node N2 of the driving transistor DT, and switches a data voltage to be applied to the second node N2 of the driving transistor DT, and is also referred to as a “switching transistor.”
The storage capacitor Cstg is connected between the first node N1 and the second node N2 of the driving transistor DT, and maintains the data voltage during, for example, one frame period.
As illustrated in
Furthermore, as illustrated in
Each pixel of the organic light-emitting display device 100 according to an exemplary embodiment may operate in one of an emission mode that is a driving mode for emitting the organic light-emitting diode (OLED) and a sensing mode for compensating for a threshold voltage Vth and/or mobility as characteristic values of the driving transistor DT of each pixel.
When the pixel of the organic light-emitting display device 100 according to an exemplary embodiment is driven in the emission mode, signal waveforms applied to the pixel are illustrated in the timing diagram of
Referring to
In the initial step, the first node N1 of the driving transistor DT is initialized. To this end, the reference voltage Vref is applied to the reference voltage line RVL as an initial voltage and the sensing signal SENSE is applied to the first transistor T1, so that the first transistor T1 is turned on. As a result, the reference voltage Vref is applied to the first node N1 of the driving transistor DT. In this case, an initial voltage is determined in consideration of a peak/black current and a voltage that may be output from a data driving integrated circuit (D-IC, also referred to as a source integrated circuit (S-IC)) in the data driver 120.
In the writing step, the scanning signal SCAN is applied to the second transistor T2 to turn on the second transistor T2, so that a data voltage Vdata is applied to the second node N2 of the driving transistor DT. Accordingly, since a predetermined voltage difference (Vdata−Vref) occurs between the second node N2 and the first node N1 of the driving transistor DT, that is, since the predetermined voltage difference (Vdata−Vref) occurs at both ends of the storage capacitor, charge is accumulated in the storage capacitor Cstg based on the predetermined voltage difference.
In the emission step, when the first transistor T1 and the second transistor T2 are simultaneously turned off, the first node N1 and the second node N2 of the driving transistor DT are floated and maintain the predetermined potential difference (Vdata−Vref), so that a voltage is boosted. As a result, when a voltage V1 of the first node N1 of the driving transistor DT increases beyond a predetermined voltage, a current flows through the organic light-emitting diode (OLED) so that the organic light-emitting diode (OLED) emits light.
In a case in which a pixel operates in the sensing mode, referring to
Referring to
One reference voltage line RVL supplying the reference voltage Vref to each pixel may also be formed for several pixel arrays. That is, reference voltage lines RVL having a number smaller than the number of the data lines may be formed.
For example, one reference voltage line RVL may be formed for four pixel arrays. In this case, the number of the reference voltage lines is ¼ of the number of the data lines.
The reference voltage line forming structure in which one reference voltage line RVL is formed for four pixel arrays as described above is illustrated in
Referring to
Referring to
Referring to
Referring to
Furthermore, referring to
As described above, one reference voltage line RVL is formed for four pixels (four pixel arrays) and two driving voltage lines DVL are formed for four pixels, such that it is possible to improve an aperture ratio, as compared with the case in which one reference voltage line RVL is formed one pixel (one pixel array) and one driving voltage line DVL is formed one pixel (one pixel array).
Furthermore, in the four pixel structure, the arrangement structure of the two driving voltage lines DVL2n−1 and DVL2n and the four data lines DL4n−3, DL4n−2, DL4n−1 and DL4n is symmetrical to the arrangement structure of the three transistors DT, T1 and T2 and the one capacitor Cstg in each pixel about the one reference voltage line RVL.
In addition, such a symmetrical structure is repeatedly formed for every four pixels, such that it is possible to easily manufacture the display panel 110.
The structure of the display panel 110 illustrated in
As described above, in an exemplary embodiment, only one reference voltage line RVL is formed for four pixel arrays in the display panel 110 to be shared by the four pixel arrays, and the reference voltage line sharing structure of directly connecting one reference voltage line RVL formed for the four pixel arrays to the data driving integrated circuit is provided, such that it is possible to improve an aperture ratio and reduce the number of contacts between the data driving integrated circuit and the reference voltage lines RVL.
However, in such an exemplary embodiment, different types of metal signal lines (connection patterns CP) and contact holes may be required in order that four pixels share one reference voltage line RVL. This may cause reduction of an aperture ratio and an increase in defects due to overlaps between the metal lines.
Furthermore, since it may be necessary to connect the data driving integrated circuit to the reference voltage lines RVL and an area for configuring a voltage applying circuit may be separately required, the number of contact pins is slightly increased and the area of the data driving integrated circuit is widened, resulting in an increase in the circuit manufacturing cost.
In order to further improve the organic light-emitting display device 100 described above, an organic light-emitting display device according to another exemplary embodiment will now be described with reference to
Referring to
Referring to
Furthermore, in the display panel 510 of the organic light-emitting display device 500, the reference voltage line RVL is not formed, which is also different from the display panel 110 of the organic light-emitting display device 100 illustrated in
The first gate driver 530 and the second gate driver 540 may be separately provided, and may also be included in one gate driver as desired.
The first gate driver 530 may be positioned only at one side of the display panel 510 as illustrated in
Each of the first gate driver 530 and the second gate driver 540 may include a plurality of gate driving integrated circuits. Such gate driving integrated circuits may be connected to bonding pads of the display panel 510 by using a tape automated bonding (TAB) method or a chip on glass (COG) method, or may be provided in a gate in panel (GIP) type directly formed on the display panel 510. Furthermore, the first gate driver 530 and the second gate driver 540 may be integrated with the display panel 510.
The data driver 520 may include a plurality of data driving integrated circuits (also referred to as source driving integrated circuits). Such data driving integrated circuits may be connected to bonding pads of the display panel 510 by using the tape automated bonding (TAB) method or the chip on glass (COG) method, or may be directly formed on the display panel 510. Furthermore, the data driver 520 may be integrated with the display panel 510.
A pixel structure of each pixel P defined in the display panel 510 of the organic light-emitting display device 500 according to another exemplary embodiment will be described with reference to
Referring to
The driving transistor DT in each pixel P is a transistor that receives a driving voltage EVDD supplied by a driving voltage line DVL, is controlled by a voltage (a data voltage) of the second node N2 applied through the second transistor T2, and drives the organic light-emitting diode (OLED).
Such a driving transistor DT has the first node N1 to which the reference voltage Vref is applied through the first transistor T1, the second node N2 to which the data voltage Vdata is applied through the second transistor T2 and the third node N3 connected to the driving voltage line DVL. The first node N1 is connected to the first transistor T1, the second node N2 is connected to the second transistor T2, and the third node N3 receives the driving voltage EVDD.
In an example, the first node of the driving transistor DT may be referred to as a source node (also referred to as a “source electrode”), the second node may be referred to as a gate node (also referred to as a “gate electrode”), and the third node N3 may be referred to as a drain node (also referred to as a “drain electrode”). The first node and the third node of the driving transistor DT may also be a drain node and a source node according to a circuit implementation scheme or a circuit state.
The first transistor T1 is a transistor that is controlled by the sensing signal SENSE supplied through the first gate line GL1, is connected between the data line DL and the first node N1 of the driving transistor DT, and is concerned in a sensing mode, and is also referred to as a “sensor transistor.”
The second transistor T2 is a transistor that is controlled by the scanning signal SCAN supplied through the second gate line GL2, is connected between a corresponding data line DL and the second node N2 of the driving transistor DT, and switches a data voltage to be applied to the second node N2 of the driving transistor DT, and is also referred to as a “switching transistor.”
The storage capacitor Cstg is connected between the first node N1 and the second node N2 of the driving transistor DT, and maintains the data voltage during one frame.
As illustrated in
Furthermore, as illustrated in
That is, each pixel defined in the display panel 510 of the organic light-emitting display device 500 does not include the reference voltage line RVL illustrated in
Instead, the pixel in the display panel 510 uses the existing data line DL, which supplies the data voltage Vdata, as a signal line for supplying the reference voltage Vref.
Accordingly, the data line DL may operate as a signal line for supplying the reference voltage Vref or a signal line for supplying the data voltage Vdata depending on an operation timing of the corresponding pixel.
As described above, each pixel defined in the display panel 510 of the organic light-emitting display device 500 is similar to each pixel defined in the display panel 110 of the organic light-emitting display device 100 illustrated in
Through such differences, driving methods for the pixel of the organic light-emitting display device 500 in an emission mode and a sensing mode are different from those of the pixel of the organic light-emitting display device 100.
Hereinafter, a driving method for a pixel of an organic light-emitting display device 500 according to another exemplary embodiment in an emission mode will be described in detail with reference to
Referring to the circuit diagram of
Thereafter, the first transistor T1 is turned off, the second transistor T2 is turned on by the scanning signal SCAN, and the data voltage Vdata is output to the data line DL, so that the data voltage Vdata is applied to the first node N1 of the driving transistor DT having the second node N2 to which the reference voltage has been applied. Afterwards, a predetermined voltage (a voltage capable of allowing a current to flow through the organic light-emitting diode (OLED)) is applied between the second node N2 and the first node N1 of the driving transistor DT and a current flows through the organic light-emitting diode (OLED), so that the organic light-emitting diode (OLED) emits light.
Such an emission mode includes an initial step, a writing step and an emission step as illustrated in
Signal waveforms and operations of the transistors in each step included in the emission mode will be described in detail with reference to
With reference to
Referring to
Afterwards, for the purpose of the performance and efficiency of the emission mode, the second transistor T2 is also turned on by the scanning signal SCAN and the reference voltage Vref applied to the data line DL is also applied to the first node N1 of the driving transistor DT, so that the first node N1 of the driving transistor DT is also initialized.
Next, with reference to
Referring to
At this time point, a predetermined voltage (Vdata−Vref) is instantaneously applied between the second node N2 and the first node N1 of the driving transistor DT, so that a charge corresponding to this voltage is accumulated in the storage transistor Cstg. However, since the first transistor T1 has been turned off, the first node N1 of the driving transistor DT does not maintain a constant voltage Vref applied before the first transistor T1 is turned off, and is floated.
As a result, the storage transistor Cstg is discharged and the voltage of the first node N1 of the driving transistor DT is boosted. At this time, no current flows through the organic light-emitting diode (OLED) by the threshold voltage of the organic light-emitting diode (OLED).
The voltage of the first node N1 of the driving transistor DT is boosted up to a voltage when a current may flow through organic light-emitting diode (OLED), and the voltage (the potential difference) between the second node N2 and the first node N1 of the driving transistor DT is constantly maintained.
With reference to
Referring to
So far, the emission mode has been described, and the sensing mode will be described below.
The sensing mode of the organic light-emitting display device 500 according to another exemplary embodiment may be classified into a sensing mode based on voltage sensing and a sensing mode based on current sensing.
The sensing mode based on voltage sensing may be classified into a threshold voltage sensing mode and a mobility sensing mode, and in the sensing mode based on current sensing, the threshold voltage sensing mode and the mobility sensing mode are not separately performed and are performed at a time, such that it is possible to simultaneously calculate a threshold voltage and mobility.
In any sensing mode, the organic light-emitting display device 500 according to another exemplary embodiment may further include a sensing unit (1100 of
Such a sensing unit is connected to the driving voltage line DVL connected to the third node N3 of the driving transistor DT.
This is different from the organic light-emitting display device 100 in that the sensing unit (including the ADC and the like of
Hereinafter, a circuit for the sensing mode based on voltage sensing will be described with reference to
Referring to
Referring to
When the first switch Sper is turned on, the precharge voltage supply node Npre and the sensing node Ns are connected to each other, and when the first switch Sper is turned off, the precharge voltage supply node Npre and the sensing node Ns are not connected to each other. When the second switch Vsam is turned on, the connection node Nadc of the analog-to-digital converter 1110 and the sensing node Ns are connected to each other, and when the second switch Vsam is turned off, the connection node Nadc of the analog-to-digital converter 1110 and the sensing node Ns are not connected to each other.
Furthermore, referring to
Hereinafter, the threshold voltage sensing mode will be described with reference to
Referring to
Hereinafter, signal waveforms and operations according to each step will be described with reference to
With reference to
Referring to
At this time, the second transistor T2 is turned on by the scanning signal SCAN, so that the data voltage Vdata supplied through the data line DL is applied to the second node N2 of the driving transistor DT.
Next, with reference to
Referring to
Accordingly, a current i flows through the driving voltage line capacitor Cdvl via the sensing node Ns through the driving transistor DT, and the driving voltage line capacitor Cdvl is charged, so that a voltage of the sensing node Ns rises.
An increase in the voltage of the sensing node Ns starts from the precharge voltage Vpre and stops at a predetermined voltage by the threshold voltage Vth of the driving transistor DT.
Next, with reference to
Referring to
Accordingly, the analog-to-digital converter 1110 senses the voltage (Vsen or Vsen′) of the sensing node Ns that stays at the predetermined voltage after the stopping of the increase.
In the timing diagram of
At this case, since the data voltage Vdata is a well-known value, it is possible to obtain the threshold voltage Vth of the driving transistor DT from the measured sensing voltage (Vsen or Vsen′).
The timing controller 550 adds the obtained threshold voltage Vth to a next data voltage Vdata to be applied to a corresponding pixel or subtracts the obtained threshold voltage Vth from the next data voltage Vdata to be applied to the corresponding pixel, and converts data to be applied to the corresponding pixel, thereby compensating for the threshold voltage.
Hereinafter, the mobility sensing mode will be described with reference to
Referring to
The initial step of the mobility sensing mode based on voltage sensing includes a first initial step in which the second transistor T2 is turned on by the scanning signal SCAN and a second initial step in which the second transistor T2 is turned off.
Referring to
Referring to
Referring to
As illustrated in
Referring to
In the timing diagram of
In the timing diagram of
Referring to
At this time, since the second switch Vsam is turned on, the analog-to-digital converter 1110 measures the voltage of the sensing node Ns as the sensing voltage (Vsen or Vsen′) and senses the mobility of the driving transistor DT from the measured voltage. In this case, the higher the sensing voltage (Vsen>Vsen′) is, the higher the sensed mobility of the driving transistor DT is.
Thus far, the sensing mode (the threshold voltage sensing mode and the mobility sensing mode) of sensing the threshold voltage and the mobility based on voltage sensing has been described, and a sensing mode of sensing the threshold voltage and the mobility based on current sensing will be described with reference to
Referring to
Referring to
When the first switch Sper is turned on, the precharge voltage supply node Npre and the sensing node Ns are connected to each other, and when the first switch Sper is turned off, the precharge voltage supply node Npre and the sensing node Ns are not connected to each other. When the second switch Vsam is turned on, the connection node N1 of the current measuring unit 2110 and the sensing node Ns are connected to each other, and when the second switch Vsam is turned off, the connection node N1 of the current measuring unit 2110 and the sensing node Ns are not connected to each other.
Furthermore, referring to
Referring to
In the sensing mode based on current sensing, when the data voltage Vdata is simultaneously applied to the second node N2 and the first node N1 of the driving transistor DT through the data line DL and the precharge voltage Vpre is applied to the driving voltage line DVL, a current flows from the first node N1 of the driving transistor DT to the driving voltage line DVL. This current is measured by the current measuring unit 2110.
In this case, currents I1 and I2 are measured for two data voltages Vdata1 and Vdata2, such that it is possible to calculate the threshold voltage and the mobility of the driving transistor DT based on a predetermined relationship.
Hereinafter, each step of the sensing mode based on current sensing will be described with reference to
Referring to
Referring to
Accordingly, the data voltage Vdata is applied to the second node N2 and the first node N1 of the driving transistor DT. That is, voltages of the second node N2 and the first node N1 of the driving transistor DT are the data voltage Vdata.
Referring to
Accordingly, a current flowing from the first node N1 of the driving transistor DT to the driving voltage line DVL is measured as a sensing current Isen.
The aforementioned process is performed for the two data voltages Vdata1 and Vdata2, thereby measuring two sensing currents I1 and I2.
Afterwards, based on the applied two data voltages Vdata1 and Vdata2, the measured two sensing currents I1 and I2 and the applied precharge voltage Vpre, two formulae of the following Formula 1 are used to calculate two unknowns Vth and K, such that it is possible to sense a threshold voltage Vth and a mobility K.
(1) I1=K(Vgs1−Vth)2
(2) I2=K(Vgs2−Vth)2 Formula 1:
In Formula 1, I1 and I2 indicate currents measured by the current measuring unit 2110. Vgs1 indicates a voltage difference between the second node N2 and the third node N3 of the driving transistor DT when the data voltage Vdata1 is applied, and may be regarded as “Vdata1−Vpre.” Vgs2 indicates a voltage difference between the second node N2 and the third node N3 of the driving transistor DT when the data voltage Vdata2 is applied, and may be regarded as “Vdata2−Vpre.” Accordingly, the following Formula 1 may be rewritten as the following Formula 2.
(1) I1=K(Vdata1−Vpre−Vth)2
(2) I2=K(Vdata2−Vpre−Vth)2 Formula 2:
In Formula 2, since I1, I2, Vdata1, Vdata2 and Vpre are well-known values, it is possible to obtain the threshold voltage Vth and the mobility K that are unknown based on Formulae (1) and (2).
Thus far, respective pixel structures of the organic light-emitting display device 500 according to another exemplary embodiment and the driving methods for the emission mode and the sensing mode have been described.
Hereinafter, with reference to
Referring to
As illustrated in
In the pixels P1 and P2, the arrangement structure of the two data lines DL4n−3 and DL4n−2 is symmetrical to the arrangement structure of three transistors DT, T1 and T2 and one capacitor Cstg in each pixel. Similarly, in the pixels P3 and P4, the arrangement structure of the two data lines DL4n−1 and DL4n is symmetrical to the arrangement structure of three transistors DT, T1 and T2 and one capacitor Cstg in each pixel.
Furthermore, the two driving voltage lines DVL2n−1 and DVL2n are symmetrically arranged at both sides of the pixel P1 and the pixel P4.
Such a symmetrical structure is repeatedly formed for every four pixels, so that the display panel 510 can be easily manufactured.
The structure of the display panel 510 illustrated in
In the display panel 510 illustrated in (B) of
Furthermore, in the display panel 510 illustrated in (B) of
As a result, the organic light-emitting display device 500 illustrated in (B) of
Furthermore, in the organic light-emitting display device 500 illustrated in (B) of
As described above, organic light-emitting display devices 100 and 500 according to embodiments of the present invention have a novel pixel structure and/or operating method thereof, with a high aperture ratio.
Furthermore, an organic light-emitting display device 500 according to an embodiment of the present invention has a pixel structure in which a reference voltage line is be required, and an overlapping area with additional signal lines (for example, connection patterns (CP)) is reduced, leading to a further increased aperture ratio.
In addition, an organic light-emitting display device 500 according to an embodiment of the present invention has a pixel structure that can reduce the number of contact pins and the area of a data driving integrated circuit (D-IC), leading to reduced manufacturing costs.
It will be apparent to those skilled in the art that various modifications and variation can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Number | Date | Country | Kind |
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10-2013-0138238 | Nov 2013 | KR | national |