Patent Application
20110121301
This application claims the benefit of Korean Patent Application No. 10-2009-0115186, filed on Nov. 26, 2009, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field of the Invention
The general inventive concept relates to an organic light emitting display device and a method of manufacturing the same.
2. Description of the Related Art
Generally, flat display devices may be largely classified into an emissive type and a non-emissive type. Examples of an emissive type flat display device include a flat cathode ray tube, a plasma display panel, an electro luminescent device, and a light emitting diode. Examples of a non-emissive type flat display device include a liquid crystal display. Electro luminescent devices have a wide viewing angle, excellent contrast, and a quick response speed, and thus have come into the spotlight as next generation display devices. The electro luminescent devices may be classified into inorganic electro luminescent devices and organic electro luminescent devices based on a material used to form an emission layer.
Organic electro luminescent devices are self-luminous display devices that emit light by electrically exciting a fluorescent organic compound. The organic electro luminescent devices are driven at a low voltage, are thin, have a wide viewing angle and a quick response speed, and thus may be used as next generation display devices.
The above information disclosed in this Related Art section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art
The present invention provides an organic light emitting display device having a uniform thin film in a pixel region.
According to an aspect of the present invention, there is provided an organic light emitting display device including: a substrate: a pixel electrode disposed on the substrate; and a pixel define layer disposed on the substrate and having an opening for exposing the pixel electrode, wherein the entire top surface of the pixel electrode is exposed through the opening.
The side of the pixel electrode may be exposed through the opening.
According to another aspect of the present invention, there is provided an organic light emitting display device including: a substrate; a pixel electrode disposed on the substrate; and a pixel define layer disposed on the substrate and exposing the pixel electrode, wherein the pixel define layer is spaced part from the edge of the pixel electrode.
The edge of the pixel define layer and the edge of the pixel electrode may be spaced apart from each other.
According to another aspect of the present invention, there is provided an organic light emitting display device including: a substrate; a pixel electrode disposed on the substrate; and a pixel define layer disposed on the substrate, wherein the pixel define layer comprises a first boundary spaced apart from the edge of the pixel electrode.
The first boundary may not overlap with the edge of the pixel electrode.
The organic light emitting display device may further include an intermediate layer including an emission layer disposed on the pixel electrode.
The organic light emitting display device may further include an interval unit on the substrate, wherein the interval unit may be a space between the edge of the pixel electrode and the first boundary, and the intermediate layer may cover the pixel electrode and the interval unit.
The intermediate layer may be formed in a uniform thickness on the pixel electrode.
The intermediate layer may be formed by using a spin coating method.
According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: preparing a substrate; forming a pixel electrode on the substrate; forming a pixel define layer so as to expose the top surface and side of the pixel electrode; and forming an intermediate layer on the pixel electrode.
The pixel define layer may have an opening for exposing the pixel electrode, wherein the opening may expose the top surface and the side of the pixel electrode.
The pixel define layer may be spaced apart from the edge of the pixel electrode.
The forming of the intermediate layer may include: coating an organic matter on the pixel define layer and the pixel electrode; and forming the intermediate layer using the organic matter left on the pixel electrode by rotating the substrate.
A more complete appreciation of the invention, and many of the attendant advantages thereof, will be readily apparent as the same becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings in which like reference symbols indicate the same or similar components, wherein:
Hereinafter, the present invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. In the drawings, like reference numerals denote like elements.
As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the principles for the present invention.
Recognizing that sizes and thicknesses of constituent members shown in the accompanying drawings are arbitrarily given for better understanding and ease of description, the present invention is not limited to the illustrated sizes and thicknesses.
In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals designate like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. Alternatively, when an element is referred to as being “directly on” another element, there are no intervening elements present.
In order to clarify the present invention, elements extrinsic to the description are omitted from the details of this description, and like reference numerals refer to like elements throughout the specification.
In several exemplary embodiments, constituent elements having the same configuration are representatively described in a first exemplary embodiment by using the same reference numeral and only constituent elements other than the constituent elements described in the first exemplary embodiment will be described in other embodiments.
The conventional organic electro luminescent devices include an anode, a cathode, and an emission layer formed of an organic matter and disposed between the anode and the cathode. When an anode voltage and a cathode voltage are respectively applied to the anode and the cathode, a hole is transported from the anode to an emission layer through a hole transport layer, and an electron is transported from the cathode to the emission layer through an electron transport layer. The hole and the electron are combined in the emission layer, and thus an exciton is generated.
When the exciton is changed from an excited state to a ground state, fluorescent molecules of the emission layer emit light, thereby forming an image. A full color type organic electro luminescent device may realize full color by using pixels emitting red, green, and blue lights.
The conventional organic electro luminescent devices include a pixel define layer at each end of the anode. A predetermined opening is formed on the pixel define layer, and then the emission layer and the cathode are sequentially formed on the top of the anode exposed through the predetermined opening.
Referring to
A buffer layer 21 is formed on the substrate 20, an active layer 22 formed of a semiconductor material is formed on the buffer layer 21, and a gate insulation layer 23 is formed to cover the active layer 22. A gate electrode 24 is formed on the gate insulation layer 23, and an interlayer insulation layer 25 is formed to cover the gate electrode 24, and source and drain electrodes 26 and 27 are formed on the interlayer insulation layer 25. The source and drain electrodes 26 and 27 respectively contact source and drain regions 22h and 22c of the active layer 22 through a contact hole 28 formed in the gate insulation layer 23 and the interlayer insulation layer 25.
The active layer 22 formed on the substrate 20 may be formed of one of an inorganic semiconductor material and an organic semiconductor material. The source and drain regions 22b and 22c are doped with an n-type or p-type dopant, and a channel region 22a is formed to connect the source and drain regions 22b and 22c.
Examples of the inorganic semiconductor material include CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, and Si.
Examples of the organic semiconductor material may include polythiophene and derivatives thereof, polyparaphenylenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polyfluorene and derivates thereof, polythiophenevinylene and derivatives thereof, polythiophene-hetero-ring aromatic copolymer and derivatives thereof as polymers, and may include oligoacene of pentacene, tetracene, or naphthalene and derivatives thereof, oligothiophene of alpha-6-thiophene or alpha-5-thiophene and derivatives thereof, phthalocyanine containing or not containing a metal and derivatives thereof, pyromelitic dianhydride or pyromelitic diimide and derivatives thereof, and perylenetetracarboxylate dianhydride or perylenetetracarboxylic diimide and derivatives thereof as small molecules.
The active layer 22 is covered by the gate insulation layer 23, and the gate electrode 24 is formed on the gate insulation layer 23. The gate electrode 24 may be formed of a conductive metal, such as molybdenum tungsten (MoW), aluminum (Al), chromium (Cr), or an alloy of Al and Copper (Cu), but a material for forming the gate electrode 24 is not limited thereto, and may be a conductive material, such as a conductive polymer. The gate electrode 24 is formed to cover a region corresponding to the gate region 22a of the active layer 22.
Referring to
According to an embodiment of the present invention, the emitter includes a plurality of sub-pixels each including an organic electro luminescent device. When the organic light emitting display device realizes full color, sub-pixels emitting red, green, and blue lights are arranged in a pattern, such as a line, a mosaic, or a lattice, so as to form a pixel. However, the organic light emitting display device may realize a mono color.
The circuit region 40 controls an image signal, or the like input to the pixel region 30.
In the organic light emitting display device, at least one thin film transistor may be installed in each of the pixel region 30 and the circuit region 40.
Examples of the thin film transistor installed in the pixel region include a switching thin film transistor for controlling an operation of the emitter according to a signal of a gate line by transmitting a data signal to the emitter, and a pixel unit thin film transistor such as a driving thin film transistor for supplying a current to the organic electro luminescent device according to a data signal. Also, examples of the thin film transistor installed in the circuit region 40 include a circuit unit thin film transistor for realizing a predetermined circuit.
The number and arrangement of the thin film transistors may vary according to characteristics and driving methods of the organic light emitting display device.
Referring to
An active layer 52 having a predetermined pattern is disposed on the buffer layer 51. A gate insulation layer 53 is disposed on the active layer 52, and a gate electrode 54 is formed on a predetermined region of the gate insulation layer 53. The gate electrode 54 is connected to a gate line (not shown) for applying an on/off signal to the thin film transistor TFT. An interlayer insulation layer 55 is formed on the gate electrode 54, and source and drain electrodes 56 and 57 are formed to respectively contact source and drain regions 52b and 52c of the active layer 52 through a contact hole 171. A passivation layer 58 formed of SiO2 or SiNx may be formed on the source and drain electrodes 56 and 57. A planarization layer 59 formed of an organic matter, such as acryl, polyimide, or benzocyclobutene (BCB), may be formed on the passivation layer 58.
A pixel electrode 161 functioning as an anode of the organic electro luminescent device OLED is formed on the planarization layer 59, and a pixel define layer 160 is formed to cover the pixel electrode 161 by using an organic matter. An opening 160b is formed on the pixel define layer 160, and then an intermediate layer 162 is formed on the top of the pixel define layer 160 and on the pixel electrode 161 that is exposed through the opening 160b. Here, the intermediate layer 162 includes an emission layer not shown. However, the structure of the organic light emitting display device 100 is not limited thereto, and may vary.
According to the organic light emitting display device, the opening 160b of the pixel define layer 160 may be formed to expose a top 161a and a side 161b of the pixel electrode 161. A structure, a function, and an effect of the pixel define layer 160 will be described in detail later.
The organic electro luminescent device displays a predetermined image by emitting red, green, or blue light according to a current flow, and includes the pixel electrode 161 connected to the drain electrode 57 of the thin film transistor TFT and receiving a positive voltage from the drain electrode 57, a counter electrode 163 covering the entire pixel electrode 161 and supplying a negative voltage to the pixel electrode 161, and the intermediate layer 162 disposed between the pixel electrode 161 and the counter electrode 163.
The pixel electrode 161 and the counter electrode 163 are insulated from each other by the intermediate layer 162, and the intermediate layer 162 emits light as the pixel electrode 161 and the counter electrode 163 apply voltages having different polarity to the intermediate layer 162.
Here, the intermediate layer 162 may be a small molecular organic layer or a polymer organic layer. When the small molecular organic layer is used, the intermediate layer 162 may have a single or multiple structure of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL), and may be formed of copper phthalocyanine (CuPc), N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3) or the like. The small molecular organic layer is formed by using a vacuum deposition method.
When the polymer organic layer is used, the intermediate layer 162 may include an HTL and an EML. Here, the HTL may be formed of poly(3,4-ethylene dioxythiophene) (PEDOT) and the EML may be formed of a poly-phenylenevinylene (PPV)-based or polyfluorene-based polymer organic matter. The polymer organic layer may be formed by using a screen printing or inkjet printing method.
However, examples of the intermediate layer 162 are not limited thereto.
The intermediate layer 162 may be formed by using a spin coating method. In detail, an organic matter is coated on the pixel electrode 161 and the pixel define layer 160. Then, the substrate 50 is rotated. The organic matter coated on the pixel define layer 160 is removed and only the organic matter coated on the pixel electrode 161 is left according to a rotating amount of the substrate 50. Next, the intermediate layer 162 may be formed by plasticizing the organic matter coated on the pixel electrode 161.
The pixel electrode 161 functions as an anode, and the counter electrode 163 functions as a cathode. Alternatively, the pixel electrode 161 may function as a cathode and the counter electrode 163 may function as an anode.
The pixel electrode 161 may be transparent or reflective. When the pixel electrode 161 is transparent, the pixel electrode 161 may be formed of ITO, IZO, ZnO, or In2O3, and when reflective, the pixel electrode 161 may be formed by forming a reflective layer using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or any mixture thereof, and then forming a ITO, IZO, ZnO, or In2O3 layer on the reflective layer.
Meanwhile, the counter electrode 163 may also be transparent or reflective. When the counter electrode 163 is transparent, the counter electrode 163 functions as a cathode, and thus may be formed by depositing a metal having a low work function, such as Li, Ca, LiF/Ca, Lif/Al, Al, Ag, Mg, or any compound thereof, on the intermediate layer 162, and then forming a subsidiary electrode layer or a bus electrode line by using a material, such as ITO, IZO, ZnO, or In2O3, for forming a transparent electrode. Alternatively, when the counter electrode 163 is reflective, the counter electrode 163 may be formed by depositing Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or any compound thereof on the intermediate layer 162.
A pixel define layer of an organic light emitting display device, according to an embodiment of the present invention will now be described in detail.
The pixel define layer is a patterned insulation layer that accurately defines a light emitting region, while manufacturing the organic light emitting display device. Referring to
Meanwhile, a solution method is used to form a thin layer by coating a solution on a substrate and then evaporating a solvent by rotating the substrate, or the like, and is used to form an organic layer 62. The thickness of the organic layer 62 formed by using the solution method is tens of nm, and the thickness of the pixel define layer 60 is hundreds to thousands of nm, and thus the pixel define layer 60 is like a barrier to the organic layer 62 while forming the organic layer 62. Accordingly, the solvent goes up the pixel define layer 60 according to surface tension before being evaporated, and thus as shown in
Accordingly, in an organic light emitting display device according to an embodiment of the present invention, a pixel define layer may be spaced apart from a pixel electrode.
This will now be described in detail.
In order to prevent each end of an intermediate layer from protruding according to surface tension, and to increase uniformity of the intermediate layer disposed on a pixel electrode, a thickness of a pixel define layer is decreased so as to decrease a tilt angle of the pixel define layer. However, considering interference of an adjacent pixel, decreasing the thickness of the pixel define layer may decrease the resolution of an image, and thus there is a limit to decreasing the tilt angle.
Also, when the intermediate layer is formed by using a forcible rotating method, such as a spin coating method, or a forcible moving method, such as a slit coating method, sides of the pixel define layer act as a large barrier, and thus backflow phenomenon is generated, and thus the edges of the organic layer becomes thick.
Accordingly, as shown in
In other words, the pixel define layer 160 may be spaced apart from the side 161b of the pixel electrode 161. The pixel define layer 160 may have a first boundary 160a surrounding the side 161b so that the opening 160b exposing the pixel electrode 161 is formed. The first boundary 160a may be spaced apart from the pixel electrode 161. Accordingly, an interval unit 70 may be formed between the first boundary 160a of the pixel define layer 160 and the side 161b of the pixel electrode 161. The pixel electrode 161 and the pixel define layer 160 may not cover the internal unit 70.
As such, when the interval unit 70 is formed between the pixel define layer 160 and the pixel electrode 161, the edges of the intermediate layer 162 protrude to the interval unit 70 instead of the pixel electrode 161, and thus the intermediate layer 162 formed on the pixel electrode 161 may be uniform. Also, since the pixel define layer 160 and the pixel electrode 161 are spaced apart from each other, a backflow phenomenon may be reduced even when a method of forming a thin film through forcible mobility, such as a spin coating or slit coating method, is used. Accordingly, the uniformity of the intermediate layer 162 in the sub-pixel may be increased.
According to the embodiments of the present invention, uniformity of a thin film in a pixel region may be increased.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2009-0115186 | Nov 2009 | KR | national |
