Organic luminescence display device and method of manufacturing the same

Abstract

An organic luminescence display device having an emission layer between a first electrode and a second electrode is disclosed. One embodiment of the device includes: a first hole injection layer and a second hole injection layer between the first electrode and the emission layer; and a charge generation layer doped with a p-type dopant between the first hole injection layer and the second hole injection layer. The device has a reduced driving voltage and an enhanced efficiency and lifetime.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects of the invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

FIG. 1 is a cross-sectional view of an organic luminescence display device; and

FIGS. 2A through 2C are cross-sectional views illustrating a method of manufacturing an organic luminescence display device according to an embodiment.

Claims

1. An organic luminescence display device comprising: a first electrode;a second electrode;an emission layer interposed between the first and second electrodes;a first hole injection layer interposed between the first electrode and the emission layer;a second hole injection layer interposed between the first hole injection layer and the emission layer; anda charge generation layer interposed between the first hole injection layer and the second hole injection layer, the charge generation layer being doped with a p-type dopant.

2. The organic luminescence display device of claim 1, wherein the charge generation layer comprises a compound represented by Formula 1:

3. The organic luminescence display device of claim 1, wherein the p-type dopant comprises at least one selected from the group consisting of hexanitrile hexaazatriphenylene, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ), FeCl3, F16CuPc and a metal oxide.

4. The organic luminescence display device of claim 3, wherein the metal oxide comprises at least one selected from the group consisting of vanadium oxide (V2O5), rhenium oxide (Re2O7), and indium tin oxide (ITO).

5. The organic luminescence display device of claim 1, wherein the p-type dopant has a lowest unoccupied molecular orbital (LUMO) energy level, wherein at least one of the first and second hole injection layers comprises a material having a highest occupied molecular orbital (HOMO) energy level, and wherein a difference between the lowest unoccupied molecular orbital (LUMO) energy level of the p-type dopant and the highest occupied molecular orbital (HOMO) energy level of the material of the at least one of the first and second hole injection layers is between about −2 eV and about +2 eV.

6. The organic luminescence display device of claim 1, wherein the device comprises a plurality of pixels, and wherein the charge generation layer forms a common layer for at least two of the pixels.

7. The organic luminescence display device of claim 1, wherein the charge generation layer has a thickness of about 10 Å to about 200 Å.

8. The organic luminescence display device of claim 1, wherein the charge generation layer has a thickness of about 20 Å to about 80 Å.

9. The organic luminescence display device of claim 1, further comprising a hole transport layer interposed between the first electrode and the emission layer, and at least one of a hole blocking layer, an electron transport layer and an electron injection layer interposed between the emission layer and the second electrode.

10. The organic luminescence display device of claim 1, further comprising an electron transport layer interposed between the second electrode and the emission layer.

11. The organic luminescence display device of claim 10, further comprising a substrate, wherein the first electrode is formed over the substrate.

12. The organic luminescence display device of claim 11, further comprising an electron injection layer interposed between the electron transport layer and the second electrode.

13. The organic luminescence display device of claim 12, further comprising a hole blocking layer interposed between the electron transport layer and the emission layer.

14. An electronic device comprising the organic luminescence display device of claim 1.

15. A method of manufacturing an organic luminescence display device, the method comprising: forming a first hole injection layer over a first electrode;forming a charge generation layer over the first hole injection layer, the charge generation layer being doped with a p-type dopant; andforming a second hole injection layer over the charge generation layer.

16. The method of claim 15, further comprising: forming an emission layer over the second hole injection layer; andforming a second electrode over the emission layer.

17. The method of claim 16, further comprising: forming a hole transport layer after forming the second hole injection layer and before forming the emission layer; andforming at least one of a hole blocking layer, an electron transport layer, and an electron injection layer after forming the emission layer and before forming the second electrode.

18. The method of claim 15, wherein the charge generation layer comprises a compound represented by Formula 1:

19. The method of claim 15, wherein the p-type dopant comprises at least one selected from the group consisting of hexanitrile hexaazatriphenylene, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ), FeCl3, F16CuPc and a metal oxide.

20. The method of claim 19, wherein the metal oxide is at least one selected from the group consisting of vanadium oxide (V2O5), rhenium oxide (Re2O7), and indium tin oxide (ITO).

21. The method of claim 15, wherein the p-type dopant has a lowest unoccupied molecular orbital (LUMO) energy level, wherein at least one of the first and second hole injection layers comprises a material having a highest occupied molecular orbital (HOMO) energy level, and wherein a difference between the lowest unoccupied molecular orbital (LUMO) energy level of the p-type dopant and the highest occupied molecular orbital (HOMO) energy level of the material of the at least one of the first and second hole injection layers is between about −2 and about +2 eV.

22. The method of claim 15, wherein forming the charge generation layer comprises using resistance heating vapor deposition, electron beam vapor deposition, laser beam vapor deposition, or sputtering deposition.

23. The method of claim 15, wherein the charge generation layer has a thickness of about 10 Å to about 200 Å.