An organic memory device includes a top electrode, a bottom electrode, and a bistable organic polymer layer between the top and bottom electrodes. Moreover, the organic memory device further includes a surface treatment layer between the organic polymer layer and the bottom electrode. Because the surface treatment layer can stabilize the interface between the organic polymer layer and the bottom electrode, the reliability of the device may be promoted.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A-1C are sectional views illustrating the process steps of fabricating an organic memory device in accordance with an embodiment of the present invention.
Claims
1. An organic memory device, comprising a top electrode, a bottom electrode, and a polymer thin film disposed between the top electrode and the bottom electrode, wherein the organic memory device further includes:
a bottom surface treatment layer disposed between the polymer thin film and the bottom electrode to stabilize interface between the polymer thin film and the bottom electrode.
2. The organic memory device as claimed in claim 1, wherein the bottom surface treatment layer includes a metal oxide layer, a metal nitride layer, a silicon oxide layer, a silicon nitride layer, or an organic self-assembling polymer layer.
3. The organic memory device as claimed in claim 1, further comprising a top surface treatment layer disposed between the polymer thin film and the top electrode to stabilize interface between the polymer thin film and the top electrode stable.
4. The organic memory device as claimed in claim 3, wherein the top surface treatment layer includes a metal oxide layer, a metal nitride layer, a silicon oxide layer, a silicon nitride layer, or an organic self-assembling polymer layer.
5. The organic memory device as claimed in claim 1, wherein the top electrode and the bottom electrode includes metal.
6. The organic memory device as claimed in claim 5, wherein the bottom electrode includes aluminum or copper.
7. The organic memory device as claimed in claim 1, wherein the polymer thin film has a bistable structure.
8. A method of fabricating an organic memory device, comprising:
forming a bottom electrode on a substrate;performing a first surface treatment on the bottom electrode to form a bottom surface treatment layer on a surface thereof;forming a polymer thin film on the bottom surface treatment layer; andforming a top electrode on the polymer thin film.
9. The method of fabricating an organic memory device as claimed in claim 8, wherein the first surface treatment includes an oxidation treatment or a nitridation treatment.
10. The method of fabricating an organic memory device as claimed in claim 9, wherein the first surface treatment includes an O2 plasma treatment, an N2 plasma treatment, or an NH3 plasma treatment.
11. The method of fabricating an organic memory device as claimed in claim 8, wherein the first surface treatment includes a thermal treatment performed in an oxygen, nitrogen or an ammonia gas atmosphere.
12. The method of fabricating an organic memory device as claimed in claim 8, wherein performing the first surface treatment on the bottom electrode includes depositing or coating the bottom surface treatment layer on the bottom electrode.
13. The method of fabricating an organic memory device as claimed in claim 12, wherein the bottom surface treatment layer includes a silicon oxide layer or a silicon nitride layer.
14. The method of fabricating an organic memory device as claimed in claim 12, wherein the bottom surface treatment layer includes an organic self-assembling polymer.
15. The method of fabricating an organic memory device as claimed in claim 8, further comprising a step of performing a second surface treatment on the polymer thin film to form a top surface treatment layer on the polymer thin film after the step of forming the polymer thin film and before forming the bottom electrode.
16. The method of fabricating an organic memory device as claimed in claim 15, wherein the second surface treatment is performed at a temperature below melting point of the polymer thin film.
17. The method of fabricating an organic memory device as claimed in claim 15, wherein the second surface treatment includes introducing a reaction gas containing oxygen, nitrogen or ammonia to make the interface between the polymer thin film and the top electrode to be an oxide interface or a nitride interface before the step of forming the top electrode.
18. The method of fabricating an organic memory device as claimed in claim 15, wherein the step of performing the second surface treatment on the polymer thin film comprises depositing or coating the top surface treatment layer on the polymer thin film.
19. The method of fabricating an organic memory device as claimed in claim 18, wherein the top surface treatment layer includes a silicon oxide layer or a silicon nitride layer.
20. The method of fabricating an organic memory device as claimed in claim 18, wherein the top surface treatment layer includes a self-assembling silicon oxide layer.
21. The method of fabricating an organic memory device as claimed in claim 8, wherein the top electrode and the bottom electrode include metal.
22. The method of fabricating the organic memory device as claimed in claim 8, wherein the polymer thin film comprises a bistable structure.
Patent Application
20070170420
