ORGANIC/INORGANIC COMPOSITE TRANSPORT LAYERS FOR BLOCKING IODINE DIFFUSION IN HALIDE PEROVSKITE ELECTRONIC DEVICES

Abstract

Compositions of matter and devices using those compositions are provided, which can, e.g., impede or restrict the migration of halides from a halide perovskite active layer. The composite material may include n layers of semiconductors, wherein n ≥ 2. Each layer of semiconductors may contain (i) one or more organic semiconductor layers and one or more inorganic semiconductor layer in contact with the one or more organic semiconductor layers, (ii) one or more composite semiconductor layers, each composite semiconductor layer containing an organic material and inorganic material, or (iii) a combination thereof.

Description

Claims

1. A composite material, comprising: n layers of semiconductors, each layer of semiconductors independently containing: one or more organic semiconductor sublayers and one or more inorganic semiconductor sublayers in contact with the one or more organic semiconductor sublayers,one or more composite semiconductor sublayers, each composite semiconductor sublayer containing an organic material and inorganic material, ora combination thereof,wherein n ≥ 2.

2. The composite material according to claim 1, wherein each layer of semiconductors is between 5 and 1000 nm thick.

3. The composite material according to claim 1, wherein at least one inorganic semiconductor sublayer comprises a metal oxide.

4. The composite material according to claim 3, wherein each metal oxide is MoOx, WOx, NiOx, VOx, TiOx, or SnOx.

5. The composite material according to claim 1, wherein at least one inorganic semiconductor sublayer comprises a chalcogenide.

6. The composite material according to claim 5, wherein at least one chalcogenide is ZnS.

7. The composite material according to claim 1, wherein at least one inorganic semiconductor sublayer comprises a metal halide.

8. The composite material according to claim 7, wherein at least one metal halide is CuI.

9. The composite material according to claim 1, wherein at least one inorganic semiconductor sublayer comprises at least one two dimensional (2D) material.

10. The composite material according to claim 9, wherein the at least one 2D material is MoS2, MoSe2, WS2, WSe2, HfS2, HfSe2, hexagonal BN, or graphene.

11. The composite material according to claim 1, wherein at least one inorganic semiconductor sublayer comprises an oxide, and the least one inorganic semiconductor sublayer is treated with a reductant to assist in stabilizing the oxide against a halide.

12. The composite material according to claim 11, wherein the halide is iodine or bromine.

13. The composite material according to claim 11, wherein the reductant is Yb or Al.

14. The composite material according to claim 1, wherein at least one organic semiconductor sublayer comprises a small molecule.

15. The composite material according to claim 1, wherein at least one organic semiconductor sublayer comprises at least one polymeric p-type or hole conducting organic material.

16. The composite material according to claim 15, wherein the at least one polymeric p-type or hole conducting organic material can be solution or vapor processed.

17. The composite material according to claim 1, wherein at least one organic semiconductor sublayer comprises at least one polymeric n-type or electron conducting organic material.

18. The composite material according to claim 17, wherein the at least one polymeric n-type or electron conducting organic material can be solution or vapor processed.

19. The composite material according to claim 1, wherein at least one composite semiconductor sublayer comprises a metal oxide and a polymeric p-type or hole conducting organic material.

20. A halide perovskite electronic device, comprising: a cathode;a metal anode;a perovskite active layer disposed between the cathode and the metal anode; anda composite material according to claim 1, the composite material being disposed between the metal anode or cathode and the perovskite active layer, arranged such that at least one of the organic semiconductor sublayers or composite semiconductor sublayers is between the perovskite active layer and any inorganic semiconductor sublayer of the composite material.

21. The halide perovskite electronic device according to claim 18, wherein the perovskite active layer comprises iodine or bromine.

22. The halide perovskite electronic device according to claim 18, wherein the halide perovskite electronic device is a light-emitting diode (LED), solar cell, transistor, laser, photodetector, or X- ray detector.