Patent Application
20230110454
This application claims priority from Korean Patent Application No. 10-2021-0099890 filed on Jul. 29, 2021, in the Korean Intellectual Property Office, and all the benefits accruing therefrom under 35 U.S.C. 119, the contents of which in its entirety are herein incorporated by reference.
The present disclosure relates to an organometallic compound, and more particularly, to an organometallic compound having phosphorescent properties and an organic light-emitting diode including the same.
As a display device is applied to various fields, interest with the display device is increasing. One of the display devices is an organic light-emitting display device including an organic light-emitting diode (OLED) which is rapidly developing.
In the organic light-emitting diode, when electric charges are injected into a light-emitting layer formed between a positive electrode and a negative electrode, an electron and a hole are recombined with each other in the light-emitting layer to form an exciton and thus energy of the exciton is converted to light. Thus, the organic light-emitting diode emits the light. Compared to conventional display devices, the organic light-emitting diode may operate at a low voltage, consume relatively little power, render excellent colors, and may be used in a variety of ways because a flexible substrate may be applied thereto. Further, a size of the organic light-emitting diode may be freely adjustable.
The organic light-emitting diode (OLED) has superior viewing angle and contrast ratio compared to a liquid crystal display (LCD), and is lightweight and is ultra-thin because the OLED does not require a backlight. The organic light-emitting diode includes a plurality of organic layers between a negative electrode (electron injection electrode; cathode) and a positive electrode (hole injection electrode; anode). The plurality of organic layers may include a hole injection layer, a hole transport layer, a hole transport auxiliary layer, an electron blocking layer, and a light-emitting layer, an electron transport layer, etc.
In this organic light-emitting diode structure, when a voltage is applied across the two electrodes, electrons and holes are injected from the negative and positive electrodes, respectively, into the light-emitting layer and thus excitons are generated in the light-emitting layer and then fall to a ground state to emit light.
Organic materials used in the organic light-emitting diode may be largely classified into light-emitting materials and charge-transporting materials. The light-emitting material is an important factor determining luminous efficiency of the organic light-emitting diode. The luminescent material must have high quantum efficiency, excellent electron and hole mobility, and must exist uniformly and stably in the light-emitting layer. The light-emitting materials may be classified into light-emitting materials emitting light of blue, red, and green colors based on colors of the light. A color-generating material may include a host and dopants to increase the color purity and luminous efficiency through energy transfer.
In recent years, there is a trend to use phosphorescent materials rather than fluorescent materials for the light-emitting layer. When the fluorescent material is used, singlets as about 25% of excitons generated in the light-emitting layer are used to emit light, while most of triplets as 75% of the excitons generated in the light-emitting layer are dissipated as heat. However, when the phosphorescent material is used, singlets and triplets are used to emit light.
In the related art, an organometallic compound is used as the phosphorescent material used in the organic light-emitting diode. Research and development of the phosphorescent material to solve low efficiency and lifetime problems are continuously required.
Accordingly, embodiments of the present disclosure are directed to an organometallic compound and an organic light-emitting diode including the same that substantially obviate one or more of the problems due to limitations and disadvantages of the related art.
Accordingly, an aspect of the present invention is to provide an organometallic compound capable of lowering operation voltage, and improving efficiency, and lifespan, and an organic light-emitting diode including an organic light-emitting layer containing the same.
Additional features and aspects will be set forth in the description that follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts provided herein. Other features and aspects of the inventive concepts may be realized and attained by the structure particularly pointed out in the written description, or derivable therefrom, and the claims hereof as well as the appended drawings.
To achieve these and other aspects of the inventive concepts, as embodied and broadly described, the present disclosure provides an organometallic compound having a novel structure represented by a following Chemical Formula 1, and an organic light-emitting diode in which a light-emitting layer contains the same as dopants thereof:
Ir(LA)m(LB)n [Chemical Formula 1]
where in the Chemical Formula 1, LA represents a main ligand having an imidazole or benzimidazole group, and is one selected from a group consisting of following Chemical Formula 2-1, Chemical Formula 2-2, Chemical Formula 2-3, Chemical Formula 2-4, Chemical Formula 2-5, Chemical Formula 2-6, Chemical Formula 2-7 and Chemical Formula 2-8,
LB denotes an ancillary ligand represented by a following Chemical Formula 3,
each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3,
wherein in each of the Chemical Formulas 2-1 to 2-8, each of X1 and X2 independently represents one selected from a group consisting of oxygen, sulfur, C(R)2 and NR,
each of R, R1, R2-1, R2-2, R2′-1, R2′-2, R2′-3, R2′-4, R3-1, R3-2, R3′-1, R3′-2, R4-1, R4-2, R4-3, R4′- 1, R4′-2 and R4′-3 independently represents one selected from a group consisting of hydrogen, deuterium, halide, deuterated or undeuterated alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, and phosphino,
in each of the Chemical Formulas 2-1 to 2-8, two functional groups R2-1 and R2-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups adjacent to each other among R2′-1, R2′-2, R2′-3 and R2′-4 may be combine with each other to form a ring structure, two functional groups R3-1 and R3-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups R3′-1 and R3′-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups adjacent to each other among R4-1, R4-2 and R4-3 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R4′4, R4′-2 and R4′-3 may be combined with each other to form a ring structure,
wherein the ancillary ligand represented by the Chemical Formula 3 is a bidentate ligand, and the ancillary ligand is one represented by a following Chemical Formula 4 or a following Chemical Formula 5:
wherein in the Chemical Formula 4, each of R5-1, R5-2, R5-3, R5-4, R6-1, R6-2, R6-3 and R64 independently represents one selected from a group consisting of hydrogen, deuterium, a C1 to C5 linear alkyl group, and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, two functional groups adjacent to each other among R5-1, R5-2, R5-3 and R5-4 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R6-1, R6-2, R6-3 and R6-4 may be combined with each other to form a ring structure,
wherein in the Chemical Formula 5, each of R7, R8 and R9 independently represents one selected from a group consisting of hydrogen, deuterium, C1 to C5 linear alkyl group and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, and two functional groups adjacent to each other among R7, R8 and R9 may combine with each other to form a ring structure.
The organometallic compound according to the present disclosure may be used as the dopant of the light-emitting layer of the organic light-emitting diode, such that the operation voltage of the organic light-emitting diode may be lowered and the efficiency and lifespan characteristics of the organic light-emitting diode may be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts as claimed.
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application, illustrate embodiments of the disclosure and together with the description serve to explain various principles.
Advantages and features of the present disclosure, and a method of achieving the advantages and features will become apparent with reference to embodiments described later in detail together with the accompanying drawings. However, the present disclosure is not limited to the embodiments as disclosed below, but may be implemented in various different forms. Thus, these embodiments are set forth only to make the present disclosure complete, and to completely inform the scope of the present disclosure to those of ordinary skill in the technical field to which the present disclosure belongs, and the present disclosure is only defined by the scope of the claims.
A shape, a size, a ratio, an angle, a number, etc. disclosed in the drawings for describing the embodiments of the present disclosure are illustrative, and the present disclosure is not limited thereto. The same reference numerals refer to the same elements herein. Further, descriptions and details of well-known steps and elements are omitted for simplicity of the description. Furthermore, in the following detailed description of the present disclosure, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be understood that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present disclosure.
The terminology used herein is directed to the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular constitutes “a” and “an” are intended to include the plural constitutes as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprise”, “comprising”, “include”, and “including” when used in this specification, specify the presence of the stated features, integers, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and/or portions thereof. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expression such as “at least one of” when preceding a list of elements may modify the entire list of elements and may not modify the individual elements of the list. In interpretation of numerical values, an error or tolerance therein may occur even when there is no explicit description thereof.
In addition, it will also be understood that when a first element or layer is referred to as being present “on” a second element or layer, the first element may be disposed directly on the second element or may be disposed indirectly on the second element with a third element or layer being disposed between the first and second elements or layers. It will be understood that when an element or layer is referred to as being “connected to”, or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer, or one or more intervening elements or layers may be present. In addition, it will also be understood that when an element or layer is referred to as being “between” two elements or layers, it may be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.
Further, as used herein, when a layer, film, region, plate, or the like is disposed “on” or “on a top” of another layer, film, region, plate, or the like, the former may directly contact the latter or still another layer, film, region, plate, or the like may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, or the like is directly disposed “on” or “on a top” of another layer, film, region, plate, or the like, the former directly contacts the latter and still another layer, film, region, plate, or the like is not disposed between the former and the latter. Further, as used herein, when a layer, film, region, plate, or the like is disposed “below” or “under” another layer, film, region, plate, or the like, the former may directly contact the latter or still another layer, film, region, plate, or the like may be disposed between the former and the latter. As used herein, when a layer, film, region, plate, or the like is directly disposed “below” or “under” another layer, film, region, plate, or the like, the former directly contacts the latter and still another layer, film, region, plate, or the like is not disposed between the former and the latter.
In descriptions of temporal relationships, for example, temporal precedent relationships between two events such as “after”, “subsequent to”, “before”, etc., another event may occur therebetween unless “directly after”, “directly subsequent” or “directly before” is not indicated.
It will be understood that, although the terms “first”, “second”, “third”, and so on may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section, without departing from the spirit and scope of the present disclosure.
The features of the various embodiments of the present disclosure may be partially or entirely combined with each other, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other and may be implemented together in an association relationship.
In interpreting a numerical value, the value is interpreted as including an error range unless there is no separate explicit description thereof.
It will be understood that when an element or layer is referred to as being “connected to”, or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer, or one or more intervening elements or layers may be present. In addition, it will also be understood that when an element or layer is referred to as being “between” two elements or layers, it may be the only element or layer between the two elements or layers, or one or more intervening elements or layers may also be present.
The features of the various embodiments of the present disclosure may be partially or entirely combined with each other, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other and may be implemented together in an association relationship.
Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
An organometallic compound according to some embodiments of the present disclosure may be represented by a following Chemical Formula 1. When the organometallic compound is used as a dopant of a light emission layer of an organic light-emitting diode, luminous efficiency and lifetime of the diode may be improved:
Ir(LA)m(LB)n [Chemical Formula 1]
where in the Chemical Formula 1, LA represents a main ligand having an imidazole or benzimidazole group, and is one selected from a group consisting of following Chemical Formula 2-1, Chemical Formula 2-2, Chemical Formula 2-3, Chemical Formula 2-4, Chemical Formula 2-5, Chemical Formula 2-6, Chemical Formula 2-7 and Chemical Formula 2-8,
LB denotes an ancillary ligand represented by a following Chemical Formula 3,
each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3,
wherein in each of the Chemical Formulas 2-1 to 2-8, each of X1 and X2 independently represents one selected from a group consisting of oxygen, sulfur, C(R)2 and NR,
each of R, R1, R2-1, R2-2, R2′-1, R2′-2, R2′-3, R2′-4, R3-1, R3-2, R3′-1, R3′-2, R4-1, R4-2, R4-3, R4′-1,R4′-2 and R4′-3 independently represents one selected from a group consisting of hydrogen, deuterium, halide, deuterated or undeuterated alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, and phosphino,
in each of the Chemical Formulas 2-1 to 2-8, two functional groups R2-1 and R2-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups adjacent to each other among R2′-1, R2′-2, R2′-3 and R2′-4 may be combined with each other to form a ring structure, two functional groups R3-1 and R3-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups R3′-1 and R3′-2 adjacent to each other may be combined with each other to form a ring structure, two functional groups adjacent to each other among R4-1, R4-2 and R4-3 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R4′-1, R4′-2 and R4′-3 may be combined with each other to form a ring structure,
wherein the ancillary ligand represented by the Chemical Formula 3 is a bidentate ligand, and the bidentate ligand is represented by a following Chemical Formula 4 or a following Chemical Formula 5:
wherein in the Chemical Formula 4, each of R5-1, R5-2, R5-3, R5-4, R6-1, R6-2, R6-3 and R64 independently represents one selected from a group consisting of hydrogen, deuterium, a C1 to C5 linear alkyl group, and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, two functional groups adjacent to each other among R5_1, R5-2, R5-3 and R5-4 may be combined with each other to form a ring structure, and two functional groups adjacent to each other among R6-1, R6-2, R6-3 and R6-4 may be combined with each other to form a ring structure,
wherein in the Chemical Formula 5, each of R7, R8 and R9 independently represents one selected from a group consisting of hydrogen, deuterium, C1 to C5 linear alkyl group and C1 to C5 branched alkyl group, wherein the C1 to C5 linear alkyl group or the C1 to C5 branched alkyl group may be substituted with at least one selected from deuterium and a halogen element, and two functional groups adjacent to each other among R7, R8 and R9 may combine with each other to form a ring structure.
As described above, the ancillary ligand bound to iridium (Ir) as a central coordination metal may be the bidentate ligand. The bidentate ligand may contain an electron donor, thereby increasing an amount of MLCT (metal to ligand charge transfer), thereby allowing the organic light-emitting diode to exhibit improved luminous properties such as high luminous efficiency and high external quantum efficiency.
The organometallic compound according to an embodiment of the present disclosure may have a heteroleptic or homoleptic structure. Specifically, the organometallic compound according to an embodiment of the present disclosure may have a heteroleptic structure in which in the Chemical Formula 1, m is 1 and n is 2; or a heteroleptic structure where m is 2 and n is 1; or a homoleptic structure where m is 3 and n is 0.
A specific example of the compound represented by the Chemical Formula 1 of the present disclosure may include one selected from a group consisting of following compounds 1 to 510. However, the specific example of the compound represented by the Chemical Formula 1 of the present disclosure is not limited thereto as long as it meets the above definition of the Chemical Formula 1:
According to one implementation of the present disclosure, the organometallic compound represented by the Chemical Formula 1 of the present disclosure may be used as a red phosphorescent material or a green phosphorescent material, preferably, as the green phosphorescent material
Referring to
Further, although not shown in
The first electrode 110 may act as a positive electrode, and may be made of ITO, IZO, tin-oxide, or zinc-oxide as a conductive material having a relatively large work function value. However, the present disclosure is not limited thereto.
The second electrode 120 may act as a negative electrode, and may include Al, Mg, Ca, or Ag as a conductive material having a relatively small work function value, or an alloy or combination thereof. However, the present disclosure is not limited thereto.
The hole injection layer 140 may be positioned between the first electrode 110 and the hole transport layer 150. The hole injection layer 140 may have a function of improving interface characteristics between the first electrode 110 and the hole transport layer 150, and may be selected from a material having appropriate conductivity. The hole injection layer 140 may include one or more compounds selected from a group consisting of MTDATA, CuPc, TCTA, HATCN, TDAPB, PEDOT/PSS, and N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4)-triphenylbenzene-1,4-diamine). Preferably, the hole injection layer 140 may include N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine). However, the present disclosure is not limited thereto.
The hole transport layer 150 may be positioned adjacent to the light-emitting layer and between the first electrode 110 and the light-emitting layer 160. A material of the hole transport layer 150 may include a compound selected from a group consisting of TPD, NPB, CBP, N-(biphenyl-4-yl)-9,9-dimethyl-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)-9H-fluoren-2-amine, N-(biphenyl-4-yl)-N-(4-(9-phenyl-9H-carbazol-3-yl)phenyl)biphenyl)-4-amine, etc. Preferably, the material of the hole transport layer 150 may include NPB. However, the present disclosure is not limited thereto.
According to the present disclosure, the light-emitting layer 160 may include the host material 160′ and the organometallic compound represented by the Chemical Formula 1 as dopants 160″ doped into the host in order to improve luminous efficiency of the host and the organic light-emitting diode. The light-emitting layer 160 may be formed by adding about 1 to 30% by weight of the organometallic compound, that is, the dopants 160″ of the Chemical Formula 1 of the present disclosure to the host material 160′, and may emit light of a green or red color. More preferably, the organometallic compound of the Chemical Formula 1 of the present disclosure may act as a green phosphorescent material.
In the light-emitting layer 160 of the present disclosure, the organometallic compound represented by the Chemical Formula 1 may be used as the dopant 160″, and a compound containing a carbazole group may be used as the host material 160′. For example, the host material containing the carbazole group may be one or more compounds selected from compounds of structures as shown in a following Table 1. However, the present disclosure is not limited thereto.
Further, the electron transport layer 170 and the electron injection layer 180 may be sequentially stacked between the light-emitting layer 160 and the second electrode 120. A material of the electron transport layer 170 requires high electron mobility such that electrons may be stably supplied to the light-emitting layer under smooth electron transport.
For example, the material of the electron transport layer 170 may include a compound selected from a group consisting of Alq3 (tris(8-hydroxyquinolino)aluminum), Liq (8-hydroxyquinolinolatolithium), PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4oxadiazole), TAZ (3-(4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, BAlq (bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), SAlq, TPBi (2,2′,2-(1,3,5-benzinetriyl)-tris (1-phenyl-1-H-benzimidazole), oxadiazole, triazole, phenanthroline, benzoxazole, benzthiazole, and 2-(4-(9,10-di(naphthalen-2-yl)anthracen-2-yl)phenyl)-1-phenyl-1H-benzo[d]imidazole. Preferably, the material of the electron transport layer 170 may include 2-(4-(9,10-di(naphthalen-2-yl) anthracen-2-yl)phenyl)-1-phenyl-1H-benzo[d]imidazole. However, the present disclosure is not limited thereto.
The electron injection layer 180 serves to facilitate electron injection, and a material of the electron injection layer may include a compound selected from a group consisting of Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, Spiro-PBD, BAlq, SAlq, etc. However, the present disclosure is not limited thereto. Alternatively, the electron injection layer 180 may be made of a metal compound. The metal compound may include, for example, one or more selected from a group consisting of Liq, LiF, NaF, KF, RbF, CsF, FrF, BeF2, MgF2, CaF2, SrF2, BaF2 and RaF2. However, the present disclosure is not limited thereto.
The organic light-emitting diode according to the present disclosure may be embodied as a white light-emitting diode having a tandem structure. The tandem organic light-emitting diode according to an illustrative embodiment of the present disclosure may be formed in a structure in which adjacent ones of two or more light-emitting stacks are connected to each other via a charge generation layer (CGL). The organic light-emitting diode may include at least two light-emitting stacks disposed on a substrate, wherein each of the at least two light-emitting stacks includes first and second electrodes facing each other, and the light-emitting layer disposed between the first and second electrodes to emit light in a specific wavelength band. In this case, the light-emitting layer included in at least one of the plurality of light-emitting stacks may contain the organometallic compound represented by the Chemical Formula 1 according to the present disclosure as the dopants. Adjacent ones of the plurality of light-emitting stacks in the tandem structure may be connected to each other via the charge generation layer CGL including an N-type charge generation layer and a P-type charge generation layer.
As shown in
As shown in
Furthermore, an organic light-emitting diode according to an embodiment of the present disclosure may include a tandem structure in which four or more light-emitting stacks and three or more charge generating layers are disposed between the first electrode and the second electrode.
The organic light-emitting diode according to the present disclosure may be used as a light-emitting element of each of an organic light-emitting display device and a lighting device. In one implementation,
As shown in
Although not shown explicitly in
The driving thin-film transistor Td is connected to the switching thin film transistor, and includes a semiconductor layer 3100, a gate electrode 3300, a source electrode 3520, and a drain electrode 3540.
The semiconductor layer 3100 may be formed on the substrate 3010 and may be made of an oxide semiconductor material or polycrystalline silicon. When the semiconductor layer 3100 is made of an oxide semiconductor material, a light-shielding pattern (not shown) may be formed under the semiconductor layer 3100. The light-shielding pattern prevents light from being incident into the semiconductor layer 3100 to prevent the semiconductor layer 3010 from being deteriorated due to the light. Alternatively, the semiconductor layer 3100 may be made of polycrystalline silicon. In this case, both edges of the semiconductor layer 3100 may be doped with impurities.
The gate insulating layer 3200 made of an insulating material is formed over an entirety of a surface of the substrate 3010 and on the semiconductor layer 3100. The gate insulating layer 3200 may be made of an inorganic insulating material such as silicon oxide or silicon nitride.
The gate electrode 3300 made of a conductive material such as a metal is formed on the gate insulating layer 3200 and corresponds to a center of the semiconductor layer 3100. The gate electrode 3300 is connected to the switching thin film transistor.
The interlayer insulating layer 3400 made of an insulating material is formed over the entirety of the surface of the substrate 3010 and on the gate electrode 3300. The interlayer insulating layer 3400 may be made of an inorganic insulating material such as silicon oxide or silicon nitride, or an organic insulating material such as benzocyclobutene or photo-acryl.
The interlayer insulating layer 3400 has first and second semiconductor layer contact holes 3420 and 3440 defined therein respectively exposing both opposing sides of the semiconductor layer 3100. The first and second semiconductor layer contact holes 3420 and 3440 are respectively positioned on both opposing sides of the gate electrode 3300 and are spaced apart from the gate electrode 3300.
The source electrode 3520 and the drain electrode 3540 made of a conductive material such as metal are formed on the interlayer insulating layer 3400. The source electrode 3520 and the drain electrode 3540 are positioned around the gate electrode 3300, and are spaced apart from each other, and respectively contact both opposing sides of the semiconductor layer 3100 via the first and second semiconductor layer contact holes 3420 and 3440, respectively. The source electrode 3520 is connected to a power line (not shown).
The semiconductor layer 3100, the gate electrode 3300, the source electrode 3520, and the drain electrode 3540 constitute the driving thin-film transistor Td. The driving thin-film transistor Td has a coplanar structure in which the gate electrode 3300, the source electrode 3520, and the drain electrode 3540 are positioned on top of the semiconductor layer 3100.
Alternatively, the driving thin-film transistor Td may have an inverted staggered structure in which the gate electrode is disposed under the semiconductor layer while the source electrode and the drain electrode are disposed above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon. In one example, the switching thin-film transistor (not shown) may have substantially the same structure as that of the driving thin-film transistor (Td).
In one example, the organic light-emitting display device 3000 may include a color filter 3600 absorbing the light generated from the electroluminescent element (light-emitting diode) 4000. For example, the color filter 3600 may absorb red (R), green (G), blue (B), and white (W) light. In this case, red, green, and blue color filter patterns that absorb light may be formed separately in different pixel areas. Each of these color filter patterns may be disposed to overlap each organic layer 4300 of the organic light-emitting diode 4000 to emit light of a wavelength band corresponding to each color filter. Adopting the color filter 3600 may allow the organic light-emitting display device 3000 to realize full-color.
For example, when the organic light-emitting display device 3000 is of a bottom emission type, the color filter 3600 absorbing light may be positioned on a portion of the interlayer insulating layer 3400 corresponding to the organic light-emitting diode 4000. In an optional embodiment, when the organic light-emitting display device 3000 is of a top emission type, the color filter may be positioned on top of the organic light-emitting diode 4000, that is, on top of a second electrode 4200. For example, the color filter 3600 may be formed to have a thickness of 2 to 5 μm.
In one example, a protective layer 3700 having a drain contact hole 3720 defined therein exposing the drain electrode 3540 of the driving thin-film transistor Td is formed to cover the driving thin-film transistor Td.
On the protective layer 3700, each first electrode 4100 connected to the drain electrode 3540 of the driving thin-film transistor Td via the drain contact hole 3720 is formed individually in each pixel area.
The first electrode 4100 may act as a positive electrode (anode), and may be made of a conductive material having a relatively large work function value. For example, the first electrode 4100 may be made of a transparent conductive material such as ITO, IZO or ZnO.
In one example, when the organic light-emitting display device 3000 is of a top-emission type, a reflective electrode or a reflective layer may be further formed under the first electrode 4100. For example, the reflective electrode or the reflective layer may be made of one of aluminum (Al), silver (Ag), nickel (Ni), and an aluminum-palladium-copper (APC) alloy.
A bank layer 3800 covering an edge of the first electrode 4100 is formed on the protective layer 3700. The bank layer 3800 exposes a center of the first electrode 4100 corresponding to the pixel area.
An organic layer 4300 is formed on the first electrode 4100. If necessary, the organic light-emitting diode 4000 may have a tandem structure. Regarding the tandem structure, reference may be made to
The second electrode 4200 is formed on the substrate 3010 on which the organic layer 4300 has been formed. The second electrode 4200 is disposed over the entirety of the surface of the display area and is made of a conductive material having a relatively small work function value and may be used as a negative electrode (a cathode). For example, the second electrode 4200 may be made of one of aluminum (Al), magnesium (Mg), and an aluminum-magnesium alloy (Al—Mg).
The first electrode 4100, the organic layer 4300, and the second electrode 4200 constitute the organic light-emitting diode 4000.
An encapsulation film 3900 is formed on the second electrode 4200 to prevent external moisture from penetrating into the organic light-emitting diode 4000. Although not shown explicitly in
Hereinafter, Synthesis Example and Present Example of the present disclosure will be described. However, following Present Example is only one example of the present disclosure. The present disclosure is not limited thereto.
<Preparation of Ligand A-2>
In a 1 L round bottom flask and under a nitrogen atmosphere, SM-1 (24.70 g, 0.10 mol), SM-3 (13.61 g, 0.20 mol), (1R, 2R)-cyclohexane-1,2-diamine (22.83 g, 0.20 mol), copper(I) iodide (1.90 g, 0.01 mol), and cesium carbonate (97.75 g, 0.30 mol) were dissolved in 500 mL of DMF, followed by heating and stirring of a mixture overnight. When reaction of the mixture was completed, a reaction vessel was cooled to room temperature, and the mixture was filtered through a celite pad filter, and an organic layer was extracted and separated therefrom using ethyl acetate and distilled water. Moisture was removed from the organic layer using anhydrous magnesium sulfate, and the organic layer was filtered through a filter, and then concentrated under reduced pressure. A resulting crude product was recrystallized using ethyl acetate and hexane to obtain A-2 (17.87 g, 76%).
<Preparation of ligand B-2>
In a 1 L round bottom flask and under a nitrogen atmosphere, SM-1 (24.70 g, 0.10 mol), SM-4 (47.22 g, 0.20 mol), (1R, 2R)-cyclohexane-1,2-diamine (22.83 g, 0.20 mol), copper(I) iodide (1.90 g, 0.01 mol), and cesium carbonate (97.75 g, 0.30 mol) were dissolved in 500 mL of DMF, followed by heating and stirring of a mixture overnight. When reaction of the mixture was completed, a reaction vessel was cooled to room temperature, and the mixture was filtered through a celite pad filter, and an organic layer was extracted and separated therefrom using ethyl acetate and distilled water. Moisture was removed from the organic layer using anhydrous magnesium sulfate, and the organic layer was filtered through a filter, and then concentrated under reduced pressure. A resulting crude product was recrystallized using ethyl acetate and hexane to obtain B-2 (17.40 g, 61%).
<Preparation of Ligand G-2>
In a 1 L round bottom flask and under a nitrogen atmosphere, SM-2 (24.60 g, 0.10 mol), SM-3 (13.61 g, 0.20 mol), (1R, 2R)-cyclohexane-1,2-diamine (22.83 g, 0.20 mol), copper(I) iodide (1.90 g, 0.01 mol), and cesium carbonate (97.75 g, 0.30 mol) were dissolved in 500 mL of DMF, followed by heating and stirring of a mixture overnight. When reaction of the mixture was completed, a reaction vessel was cooled to room temperature, and the mixture was filtered through a celite pad filter, and an organic layer was extracted and separated therefrom using ethyl acetate and distilled water. Moisture was removed from the organic layer using anhydrous magnesium sulfate, and the organic layer was filtered through a filter, and then concentrated under reduced pressure. A resulting crude product was recrystallized using ethyl acetate and hexane to obtain G-2 (19.19 g, 82%).
<Preparation of Ligand H-2>
In a 1 L round bottom flask and under a nitrogen atmosphere, SM-2 (24.60 g, 0.10 mol), SM-4 (47.22 g, 0.20 mol), (1R, 2R)-cyclohexane-1,2-diamine (22.83 g, 0.20 mol), copper(I) iodide (1.90 g, 0.01 mol), and cesium carbonate (97.75 g, 0.30 mol) were dissolved in 500 mL of DMF, followed by heating and stirring of a mixture overnight. When reaction of the mixture was completed, a reaction vessel was cooled to room temperature, and the mixture was filtered through a celite pad filter, and an organic layer was extracted and separated therefrom using ethyl acetate and distilled water. Moisture was removed from the organic layer using anhydrous magnesium sulfate, and the organic layer was filtered through a filter, and then concentrated under reduced pressure. A resulting crude product was recrystallized using ethyl acetate and hexane to obtain H-2 (20.74 g, 73%).
<Preparation of Ligand A-1>
In a 500 mL round-bottom flask and under a nitrogen atmosphere, A-2 (11.75 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then iodomethane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound A-1 (17.90 g, 85%).
<Preparation of Ligand B-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, B-2 (14.25 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then iodomethane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound B-1 (19.55 g, 83%).
<Preparation of Ligand C-1>
In a 500 mL round-bottom flask and under a nitrogen atmosphere, A-2 (11.75 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate, and then 2-iodompropane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound C-1 (17.51 g, 78%).
<Preparation of Ligand D-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, B-2 (14.25 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 2-iodopropane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound D-1 (20.46 g, 82%).
<Preparation of Ligand E-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, A-2 (11.75 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 2-iodopropane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound E-1 (18.52 g, 80%).
<Preparation of Ligand F-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, B-2 (14.25 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 1-iodobutane (51.00 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound F-1 (21.55 g, 84%).
<Preparation of Ligand G-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, G-2 (11.70 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then, iodomethane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound G-1 (18.70 g, 89%).
<Preparation of Ligand H-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, H-2 (14.20 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then iodomethane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound H-1 (19.04 g, 81%).
<Preparation of Ligand I-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, G-2 (11.70 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then, 2-iodopropane (55.21 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound I-1 (19.72 g, 88%).
<Preparation of Ligand J-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, H-2 (14.20 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 2-iodompropane(42.58 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound J-1 (22.42 g, 90%).
<Preparation of Ligand K-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, G-2 (11.70 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 1-iodobutane (42.58 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound K-1 (19.64 g, 85%).
<Preparation of Ligand L-1>
In a 500 mL round bottom flask and under a nitrogen atmosphere, H-2 (14.20 g, 0.05 mol) was dissolved in 250 mL of ethyl acetate and then 1-iodobutane(42.58 g, 0.30 mol) was sequentially added to a reaction solution and then, the reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was filtered and concentrated under reduced pressure to obtain the compound L-1 (22.79 g, 89%).
<Preparation of Ligand A>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant A-1 (21.05 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound A (22.94 g, 95%), and further purification for a next reaction was not performed.
<Preparation of ligand B>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant B-1 (23.55 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound B (24.51 g, 92%), and further purification for a next reaction was not performed.
<Preparation of Ligand C>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant C-1 (22.46 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound C (22.74 g, 89%), and further purification for a next reaction was not performed.
<Preparation of Ligand D>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant D-1 (24.96 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound D (23.56 g, 84%), and further purification for a next reaction was not performed.
<Preparation of Ligand E>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant E-1 (23.16 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound E (23.86 g, 91%), and further purification for a next reaction was not performed.
<Preparation of Ligand F>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant F-1 (25.66 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound F (26.45 g, 92%), and further purification for a next reaction was not performed.
<Preparation of Ligand G>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant G-1 (21.00 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound G (20.24 g, 84%), and further purification for a next reaction was not performed.
<Preparation of Ligand H>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant H-1 (23.50 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound H (23.14 g, 89%), and further purification for a next reaction was not performed.
<Preparation of Ligand I>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant I-1 (22.41 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound I (22.95 g, 90%), and further purification for a next reaction was not performed.
<Preparation of Ligand J>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant J-1 (24.91 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound J (25.48 g, 91%), and further purification for a next reaction was not performed.
<Preparation of Ligand K>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant K-1 (23.11 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. Upon completion of the reaction thereof, the reaction solution was concentrated under reduced pressure to obtain the compound K (24.89 g, 95%), and further purification for a next reaction was not performed.
<Preparation of Ligand L>
In a 500 mL round bottom flask and under a nitrogen atmosphere, the reactant L-1 (25.61 g, 0.05 mol) and silver oxide (5.80 g, 0.025 mol) were dissolved in 250 mL of acetonitrile and then a reaction solution was stirred at room temperature for 24 hours. When the reaction thereof was completed, the reaction solution was concentrated under reduced pressure to obtain the compound L (26.98 g, 94%), and further purification for a next reaction was not performed.
<Preparation of Iridium Compound 1>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand A (1.45 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 1 (1.68 g, 75%).
<Preparation of Iridium Compound 2>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand B (1.60 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 2 (1.63 g, 68%).
<Preparation of Iridium Compound 16>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand G (1.46 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 16 (1.57 g, 70%).
<Preparation of Iridium Compound 17>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand H (1.60 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 17 (1.94 g, 81%).
<Preparation of Iridium Compound 91>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand C (1.53 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 91 (1.89 g, 81%).
<Preparation of Iridium Compound 92>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand D (1.68 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 92 (1.87 g, 76%).
<Preparation of Iridium Compound 106>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand I (1.53 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 106 (1.75 g, 75%).
<Preparation of Iridium Compound 107>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand J (1.68 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 107 (1.69 g, 68%).
<Preparation of Iridium Compound 181>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand E (1.57 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 181 (1.90 g, 80%).
<Preparation of Iridium Compound 182>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand F (1.72 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 182 (1.64 g, 65%).
<Preparation of Iridium Compound 196>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand K (1.57 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 196 (1.87 g, 79%).
<Preparation of Iridium Compound 197>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M1 (1.61 g, 1.5 mmol) and the ligand L (1.72 g, 3 mmol) were dissolved in o-xylene (150 mL) and a reaction solution was stirred under reflux for 18 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of ethylacetate:hexane=25:75 to obtain the above iridium compound 197 (1.87 g, 74%).
<Preparation of Iridium Compound 466>
In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M2 (2.17 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 466 (1.82 g, 72%).
<Preparation of Iridium Compound 468>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M2 (2.17 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 468 (1.39 g, 59%).
<Preparation of Iridium Compound 470>
In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M3 (2.33 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 470 (1.42 g, 53%).
<Preparation of Iridium Compound 472>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M3 (2.33 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 472 (1.82 g, 72%).
<Preparation of Iridium Compound 474>
In a 250 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M4 (2.42 g, 1.5 mmol) and the ligand L1 (0.47 g, 3 mmol) were dissolved in toluene (100 mL) and a reaction solution was stirred under reflux for 24 hours. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:1 to obtain the above iridium compound 474 (1.75 g, 63%).
<Preparation of Iridium Compound 476>
In a 150 mL round bottom flask and under a nitrogen atmosphere, iridium precursor M4 (2.42 g, 1.5 mmol) and the ligand L2 (0.30 g, 3 mmol) were dissolved in a mixed solvent (2-ethoxyethanol:DMF=40 mL:40 mL) and a reaction solution was stirred under reflux for 24 hours at 135° C. When the reaction thereof was completed, a temperature was lowered to room temperature. Then, an organic layer was extracted therefrom using dichloromethane and distilled water, and moisture was removed therefrom by adding anhydrous magnesium sulfate thereto. A filtrate was obtained through filtration thereof and was depressurized to obtain a resulting crude product. The resulting crude product was purified using column chromatography under a condition of toluene:hexane=1:3 to obtain the above iridium compound 476 (1.77 g, 68%).
A glass substrate having a thin film made of ITO (indium tin oxide) of a thickness of 1,000 Åcoated thereon was washed and was subjected to ultrasonic cleaning using acetone and was dried. HI-1 (N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine)) of a following structure as a hole injection material of a thickness of 60 nm was formed on the prepared ITO transparent electrode via thermal vacuum deposition. NPB as a hole transport material was thermally vacuum deposited to have a thickness of 80 nm on the hole injection layer. A light-emitting layer was thermally vacuum deposited on the hole transport material. In this regard, the light-emitting layer contains CBP of a following structure as a host material and the compound 1 as the dopant. A doping concentration was 5% and a thickness of the light emission layer was 30 nm. ET-1: Liq (1:1) (30 nm) as materials for the electron transport layer and the electron injection layer was thermally vacuum deposited on the light-emitting layer. Then, 100 nm thick aluminum was deposited thereon to form a negative electrode. Thus, an organic light-emitting diode was fabricated. The materials used in above Present Example 1 are as follows.
HI-1 means N1,N1′-([1,1′-biphenyl]-4,4′-diyl)bis(N1,N4,N4-triphenylbenzene-1,4-diamine).
ET-1 Means 2-(4-(9,10-di(naphthalen-2-yl) anthracen-2-yl)phenyl)-1H-benzo[d]imidazole.
An organic light-emitting diode of each of Present Examples 2 to 12 and Comparative Examples 1 to 5 was manufactured in the same manner as in Present Example 1, except that each of compounds shown in a following Table 2 was used instead of the compound 1 as the dopant in Present Example 1.
Structures of Ref-1 to Ref-5 as dopant materials of Comparative Examples 1 to 5 in Table 2 are as follows.
An organic light-emitting diode of each of Present Examples 13 to 18 and Comparative Examples 6 to 10 was manufactured in the same manner as in Present Example 1, except that each of compounds shown in a following Table 3 was used instead of the compound 1 as the dopant in Present Example 1.
Structures of Ref-6 to Ref-10 as dopant materials of Comparative Examples 6 to 10 in Table 3 are as follows.
An organic light-emitting diode of each of Present Examples 19 to 23 was manufactured in the same manner as in Present Example 1 except that each of compounds shown in a following Table 4 was used instead of CBP as the host in Present Example 1.
Structures of GH1 to GH5 as host materials of Present Examples 19 to 23 of the Table 4 are as follows, and compound names thereof are described in the above Table 1.
An organic light-emitting diode of each of Present Examples 24 to 28 was manufactured in the same manner as in Present Example 2 except that each of compounds shown in a following Table 5 was used instead of CBP as the host in Present Example 2. The structures of the host materials GH1 to GH5 are the same as those described above with reference to Present Examples 19 to 23.
It may be identified from the results of the above Table 2 and Table 3 that in the organic light-emitting diode in which the organometallic compound of each of Present Examples 1 to 18 which satisfies the Chemical Formula 1 according to the present disclosure is used as the dopant of the light-emitting layer of the diode, the operation voltage of the diode is lowered, the maximum luminous quantum efficiency, external quantum efficiency (EQE) and lifetime (LT95) of the diode are improved, compared to those in each of Comparative Examples 1 to 10.
A scope of protection of the present disclosure should be construed by the scope of the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present disclosure. Although the embodiments of the present disclosure have been described in more detail with reference to the accompanying drawings, the present disclosure is not necessarily limited to these embodiments. The present disclosure may be implemented in various modified manners within the scope not departing from the technical idea of the present disclosure. Accordingly, the embodiments disclosed in the present disclosure are not intended to limit the technical idea of the present disclosure, but to describe the present disclosure. the scope of the technical idea of the present disclosure is not limited by the embodiments. Therefore, it should be understood that the embodiments as described above are illustrative and non-limiting in all respects. The scope of protection of the present disclosure should be interpreted by the claims, and all technical ideas within the scope of the present disclosure should be interpreted as being included in the scope of the present disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2021-0099890 | Jul 2021 | KR | national |
