1. Field of the Invention
The present invention relates to oscillating devices, light deflectors, and optical apparatuses using the light deflectors, such as image forming apparatuses and displays. Light deflectors are suitably used in, for example, projection displays that project images by deflecting light and performing scanning, image forming apparatuses using electrophotography processes, such as laser beam printers and digital copying machines.
2. Description of the Related Art
Various optical scanning systems and optical scanning apparatuses serving as light deflectors that deflect light by sinusoidally oscillating movable portions having reflecting surfaces are known. Compared to optical scanning systems using rotatable polygonal mirrors, optical scanning systems using light deflectors that sinusoidally oscillate utilizing resonance have significantly smaller light deflectors and consume less power. In particular, light deflectors made of single-crystal silicon, by a semiconductor process, theoretically produce no metal fatigue and have better durability.
U.S. Pat. No. 4,317,611 discloses a light deflector made of silicon, which is shown in
The light deflector shown in
The movable portion of the oscillating device torsionally oscillates by a predetermined angle and is subjected to great angular acceleration. Thus, the movable portion is subjected to an inertial force due to its own weight during driving and may be deformed. In particular, when laser scanning is performed using a light deflector whose movable portion has a reflecting surface, the deformation of the movable portion affects the optical characteristics of scanning light.
The present invention provides an oscillating device in which the amount of deformation of a movable portion during torsional oscillation is reduced.
An oscillating device according to the present invention has a supporting portion, a movable portion, a torsion spring connecting the movable portion to the supporting portion in a manner allowing the movable portion to torsionally oscillate about a torsional axis, and a driving unit configured to oscillate the movable portion. The movable portion is made of single-crystal silicon. A principal surface of the movable portion lies in a (110) crystal plane. A crystal orientation parallel to the principal surface of the movable portion and perpendicular to the torsional axis is a [111] orientation.
This configuration further reduces the amount of deformation of the movable portion, compared to a configuration in which the principal surface of the movable portion lies in another crystal plane or the crystal orientation is another orientation. Accordingly, it is possible to provide an oscillating device that maintains the flatness of the movable portion during torsional oscillation.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
An embodiment of the present invention will now be described with reference to
The movable portion 103 is made of a single-crystal silicon substrate, and the principal surface (the surface having the reflecting surface 102 in
Herein, the planes equivalent to the (111) crystal plane, such as the (−1−1−1) crystal plane and the (−111) crystal plane, are referred to as “(111) equivalent planes” (i.e., the {111} planes). Likewise, the orientations equivalent to the [111] orientation, such as the [−1−1−1] orientation and the [−111] orientation, are referred to as “[111] equivalent orientations”.
The oscillating device according to the present embodiment is made of, for example, a single-crystal silicon substrate whose principal surface lies in the (110) crystal plane, and has the supporting portions 101, the movable portion 103, and the torsion springs 104a, 104b that are integrally formed.
In
The oscillating device according to the present embodiment further has a driving unit configured to drive the movable portion 103. Examples of the driving unit include a coil and a magnet when the driving unit is of an electromagnetic type, an electrode when the driving unit is of an electrostatic type, and a piezoelectric element when the driving unit is of a piezoelectric type. Referring to
Principles of the present invention are described below.
The approximation model shown in
where x is the dimensionless distance shown in
The distance δ between the deformation (deflection) y and the reference plane Q affects the optical characteristics of the reflecting surface 402. Where the reference plane Q is as shown in
The distance δ is proportional to the displacement angle Θ, the width W of the mirror to the fifth power, and the frequency f squared. Thus, in the case of a larger reflecting surface area, a larger deflection angle, or a higher-frequency driving signal, the deformation of the movable portion due to its own weight becomes significant.
The following physical properties were used in the calculation using a finite element method: the density of silicon=2300 kg/m3, and the stiffness coefficient (unit: Pa) shown below, which was used instead of Young's modulus (unit: Pa) in order to take into account the anisotropy of single-crystal silicon.
where C11=167.4 GPa, C12=65.23 GPa, and C44=79.57 GPa.
It becomes possible to perform an analysis taking into account the crystal anisotropy, by creating finite element models of the components, such as a movable portion and torsion springs, using the above-noted physical properties, and by performing calculation using a finite element method.
In
The angle with respect to the [110] orientation represents the angle of the crystal orientation parallel to the principal surface of the movable portion and perpendicular to the torsional axis with respect to the [110] orientation existing in the principal surface of the movable portion. Thus, when the crystal orientation parallel to the principal surface of the movable portion and perpendicular to the torsional axis is the [110] orientation, the angle with respect to the [110] orientation is 0 degrees.
Herein, a (100) substrate refers to a substrate whose principal surface lies in the (100) crystal plane. Likewise, a (110) substrate and a (111) substrate refer to substrates whose principal surfaces lie in the (110) crystal plane and the (111) crystal plane, respectively. For example, in the case of a (100) substrate, the crystal orientation that makes angles of ±45 degrees and ±135 degrees with respect to the [110] orientation is the [100] orientation. The crystal orientation that makes angles of 0 degrees, ±90 degrees, and ±180 degrees with respect to the [110] orientation is the [110] orientation. In the case of a (110) substrate, the crystal orientation that makes angles of 0 degrees and ±180 degrees with respect to the [110] orientation is the [110] orientation. The crystal orientation that makes angles of ±90 degrees with respect to the [110] orientation is the [100] orientation, and the crystal orientation that makes angles of ±35.3 degrees and ±144.7 degrees is the [111] orientation. In the case of a (111) substrate, the crystal orientation that makes angles of 0 degrees and ±180 degrees is the [110] orientation.
As shown in
As has been described, in the oscillating device according to the present embodiment, it is possible to reduce the amount of deformation of the movable portion having the reflecting surface during high-speed driving, utilizing the crystal anisotropy of silicon substrates. Accordingly, a light deflector using the oscillating device according to the present embodiment prevents deterioration in spot shape of deflected light (reflected light) during high-speed driving.
Torsion springs of the oscillating device according to the present embodiment are described below.
The torsion springs of the oscillating device according to the present embodiment are made of single-crystal silicon, whose crystal orientation parallel to the torsional axis is the [111] orientation. The [111] orientation includes the orientations equivalent thereto.
The effect of the use of the torsion springs will be described.
In
The angle with respect to the [110] orientation represents the angle of the crystal orientation of the torsion springs parallel to the torsional axis with respect to the [110] orientation. Thus, when the angle of the crystal orientation of the torsion springs parallel to the torsional axis with respect to the [110] orientation is 0 degrees, the crystal orientation of the torsion springs parallel to the torsional axis is the [110] orientation. The cross section of the torsion springs, i.e., a section perpendicular to the torsional axis, is rectangular.
As shown in
A comparison between a torsion spring made of a substrate whose principal surface lies in a crystal plane having a small torsion spring constant ratio and a torsion spring made of a substrate whose principal surface lies in a crystal plane having a large torsion spring constant ratio is as follows. When torsion springs having the same torsion spring constant are to be made, a substrate whose crystal plane and orientation have a small torsion spring constant ratio makes a larger torsion spring than a substrate whose crystal plane has a large torsion spring constant ratio. For example, when torsion springs having the same length are to be made, the torsion spring having a smaller torsion spring constant ratio can have a larger width. When torsion springs are to be made of single-crystal silicon substrates having the same degree of manufacturing error, the influence of the manufacturing error on the torsion spring constant is smaller for the torsion spring having a larger width. Thus, a torsion spring made of a substrate whose crystal plane and orientation have a small torsion spring constant ratio is less affected by manufacturing error of the single-crystal silicon substrate.
This configuration reduces variations in torsion spring constants due to manufacturing error of the width of torsion springs or the like. Accordingly, the amount of deformation of the movable portion during high-speed driving and variation in resonance frequency due to manufacturing error can be reduced.
The torsion spring may be made of a (111) substrate. As shown in
As shown in
The light deflector according to the present embodiment may have a plurality of movable portions, and a plurality of torsion springs configured to support the plurality of movable portions in a manner allowing the movable portion to torsionally oscillate about a single torsional axis. At least one of the plurality of movable portions has the reflecting surface. The plurality of movable portions oscillate about the torsional axis at a natural frequency serving as a reference frequency, and at a natural frequency that is an integral multiple of the reference frequency. The light deflector can perform an optical scanning in addition to a sinusoidal optical scanning, by oscillating the movable portions about the torsional axis at two or more natural frequencies simultaneously.
The image forming apparatus according to the present embodiment may have a light source, the light deflector, and a photosensitive body. The light deflector may deflect light emitted from the light source and irradiate the photosensitive body with a part of the light to form an electrostatic latent image. When a light deflector having a movable portion that is less deformed during high-speed driving is used, the spot shape of the reflected light is not deteriorated. Accordingly, deterioration in quality of images can be prevented.
A method for manufacturing the oscillating device according to the present embodiment will now be described.
When supporting portions, a movable portion, and torsion springs are integrally made of single-crystal silicon, for example, the following process is to be followed: First, the supporting portions, the movable portion, and the torsion springs are patterned on a (110) substrate, using a photolithography process. At this time, the crystal orientation parallel to the principal surface of the movable portion and perpendicular to the torsional axis is the [111] orientation. Then, non-patterned portions are removed using a wet or dry etching process. By integrally making the supporting portions, the movable portion, and the torsion springs using a semiconductor process, which has high processing accuracy, the oscillating devices can be fabricated highly accurately.
A method for fabricating a movable portion separately from supporting portions and torsion springs is described below.
The movable portion is made of a (110) substrate, using a wet or dry etching process or a dicing blade (a circular rotating blade). The movable portion is then joined to the torsion springs such that the crystal orientation parallel to the principal surface of the movable portion and perpendicular to the torsional axis is the [111] orientation. They may be joined together by adhesion or welding. By joining these components together, a light deflector having a movable portion that is less deformed during high-speed driving is fabricated.
Alternatively, components constituting light deflectors, such as movable portions and torsion springs, may be separately made of silicon wafers using a micromachining process. This reduces waste portions of the wafers, leading to an increase in the number of components obtained from a single silicon wafer. Accordingly, it is possible to provide inexpensive light deflectors. Further, by making components, such as torsion springs, separately from movable portions made of a (110) substrate, the torsion springs may be made of any desired material. For example, the torsion springs may be weakened to lower the resonance frequency, or may be hardened to increase the resonance frequency. Accordingly, it is possible to provide light deflectors with a high resonance frequency and light deflectors with a low resonance frequency. In particular, it is possible to provide light deflectors having torsion springs made of silicon, whose crystal orientation is oriented in any desired orientation.
The torsion springs are made of a (110) substrate, such that the crystal orientation parallel to the torsional axis is the [111] orientation. The movable portion and the torsion springs may be joined together by adhesion or welding. This reduces variation in torsion spring constant due to manufacturing error of the width of the torsion springs or the like. Accordingly, the defect rate of torsion springs due to manufacturing error can be reduced, leading to a reduction in manufacturing cost.
Alternatively, the torsion springs may be made of a (111) substrate. This reduces variations in spring constants due to misalignment of the crystal orientation of the torsion springs with the intended orientation during fabrication. Accordingly, again, the defect rate of torsion springs due to manufacturing error can be reduced, leading to a reduction in manufacturing cost.
The present invention will now be described in more detail with specific examples.
A configuration of a light deflector according to Example 1 will be described with reference to
That is, a crystal orientation 1000 of the movable portion 103 shows that the principal surface of the movable portion 103 lies in the (110) crystal plane, and the crystal orientation parallel to the principal surface of the movable portion 103 and perpendicular to the torsional axis 108 is the [111] orientation.
The movable portion 103 has a length perpendicular to the torsional axis 108 of 3.0 mm, a length parallel to the torsional axis 108 of a 1.0 mm, and a thickness of 0.3 mm. Although the movable portion 103 is in the shape of a rectangular parallelepiped, it may be in the shape of an elliptic cylinder or the like. The reflecting surface 102 is made of aluminum, by vacuum deposition. The supporting portions 101, the movable portion 103, and the torsion springs 104a, 104b are made of a (110) substrate, using a photolithography process and a dry etching process used in a semiconductor manufacturing method. The crystal orientation of the movable portion 103 parallel to the principal surface of the movable portion 103 and perpendicular to the torsional axis 108 is the [111] orientation.
The movable portion 103 has a hard magnet 106 and is magnetized perpendicularly to the torsional axis 108 (in the left-right direction in
In this configuration, the largest amount of deformation of the movable portion 103 is about 40 nm, which is smaller than the amount of deformation of a movable portion to which the present invention is not applied. Accordingly, deterioration in spot shape of the reflected light can be reduced.
A configuration of a light deflector according to Example 2 will be described with reference to
The movable portion 203 is made of a (110) substrate, using a photolithography process and a dry etching process used in a semiconductor manufacturing method. The movable portion 203 and the torsion springs 204a and 204b are bonded together, as shown in
By separately making the components, such as movable portions and torsion springs, of silicon wafers, waste portions of the wafers can be reduced, leading to an increase in the number of components obtained from a single silicon wafer, and a reduction in manufacturing cost.
As shown in
This configuration reduces variations in torsion spring constants even if the torsion springs 204a, 204b have a manufacturing error of about 1 μm with respect to the width thereof, reducing a variation in resonance frequency due to manufacturing error. The amount of deformation of the movable portion during high-speed driving can be reduced by orienting the crystal orientation of the movable portion as above.
A configuration of a light deflector according to Example 3 will be described with reference to
The movable portion 303 has a length perpendicular to the torsional axis 308 of 3.0 mm, a length parallel to the torsional axis 308 of 1.0 mm, and a thickness of 0.3 mm. The movable portion 305 has a length perpendicular to the torsional axis 308 of 3.0 mm, a length parallel to the torsional axis 308 of 1.0 mm, and a thickness of 0.3 mm. The movable portion 305 has a permanent magnet (not shown) and can be driven by an electromagnetic force, similarly to Example 1.
The torsion springs 302a, 302b are made of a (111) substrate. As shown in
The light deflector according to Example 3 torsionally oscillates about the torsional axis 308 at a frequency of f1, which serves as the reference frequency and is referred to as a primary natural oscillation mode, and at a frequency of f2, which is double the reference frequency and is referred to as a secondary natural oscillation mode. By torsionally oscillating the light deflector at the primary and secondary torsional oscillation modes simultaneously, the displacement angle of the light reflected by the reflecting surface 304 provided on the movable portion 303 during deflection and scanning is controlled by these two oscillation modes. Because the light deflector according to Example 3 has the primary torsional oscillation mode, which serves as the reference frequency, and the secondary torsional oscillation mode, which is double the reference frequency, the light deflector can be oscillated with a sawtooth waveform. This allows the light deflector to perform optical scanning with little variation in angular speed, further making the spot shape of the reflected light uniform.
When a light deflector of the present invention is applied to an image display apparatus such as a projection display, the image display apparatus should be configured as follows. A light source emits a light beam modulated according to image data. The light deflector of the present invention deflects the light beam and irradiates an object with the light beam to form an image thereon. The light deflector is configured to deflect the light beam in the main and sub scanning directions of the object.
As described above, the light deflector of the present invention can be applied to the above-described optical apparatuses.
The present invention relates to oscillating devices, light deflectors, and image forming apparatuses using the light deflectors. Light deflectors are suitably used in, for example, projection displays that project images by deflecting light and performing scanning, image forming apparatuses using an electrophotography process, such as laser beam printers and digital copying machines.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2007-197393, filed Jul. 30, 2007, which is hereby incorporated by reference herein in its entirety.
Number | Date | Country | Kind |
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2007-197393 | Jul 2007 | JP | national |