The present invention claims priority under 35 U.S.C. § 119 to Japanese Application No. 2023-219886 filed Dec. 26, 2023, the entire content of which is incorporated herein by reference.
The present disclosure relates to an oscillator circuit.
Digital circuits and frequency synthesizers require a reference clock for their operation. An oscillator is employed to generate such a reference clock. Examples of oscillators include oscillators employing quartz resonators, ceramic resonators and Micro Electro Mechanical Systems (MEMS) resonators, LC oscillators, CR oscillators, ring oscillators, multi-vibrators, relaxation oscillators, and the like.
Embodiments will now be described, by way of example only, with reference to the accompanying drawings which are meant to be exemplary, not limiting, and wherein like elements are numbered alike in several Figures, in which:
Description will be made regarding the outline of several exemplary embodiments of the present disclosure. The outline is a simplified explanation regarding several concepts of one or multiple embodiments as a preface to the detailed description described later in order to provide a basic understanding of the embodiments. That is to say, the outline described below is by no means intended to restrict the scope of the present disclosure. The outline is by no means a comprehensive outline of all possible embodiments. That is to say, the outline is by no means intended to identify the indispensable or essential elements of all the embodiments and is by no means intended to define the scope of a part of or all the embodiments. For convenience, in some cases, an “embodiment” as used in the present specification represents a single or multiple embodiments (examples and modifications) disclosed in the present specification.
An oscillator circuit according to one embodiment includes: a first current source structured to generate a first current; a second current source structured to generate a second current; a first node and a second node; a first transistor having a drain coupled to the first current source; a reference voltage circuit structured to generate a reference voltage at a source of the first transistor; a capacitor; a second transistor having a source coupled to a first end of the capacitor, a drain coupled to the first node, and a gate coupled to a gate of the first transistor; a third transistor having a source coupled to a second end of the capacitor, a drain coupled to the second node, and a gate coupled to the gate of the first transistor; a first switch coupled between the first node and the second current source; a second switch coupled between the second node and the second current source; a charging/discharging circuit comprising a third switch coupled between the first end of the capacitor and a ground and a fourth switch coupled between the second end of the capacitor and the ground; and a control circuit structured to switch between (i) a first state in which the second switch and the third switch are turned on and the first switch and the fourth switch are turned off and (ii) a second state in which the second switch and the third switch are turned off and the first switch and the fourth switch are turned on based on a first voltage that occurs at the first node and a second voltage that occurs at the second node, and to control the charging/discharging circuit so as to discharge the capacitor in a discharging period that is a first portion of the first state and a discharging period that is a first portion of the second state.
With this configuration, this requires a single capacitor to generate a pulse signal with a duty cycle of 50%. This allows the circuit area to be reduced as compared with an arrangement including two capacitors.
In one embodiment, the charging/discharging circuit may further include a fifth switch coupled in parallel with the capacitor and structured to be turned on in the discharging period.
In one embodiment, the control circuit may turn on the third switch and the fourth switch in the discharging period.
In one embodiment, the charging/discharging circuit may further include: a sixth switch coupled between the first node and the ground; and a seventh switch coupled between the second node and the ground. Also, the control circuit may turn off the sixth switch and turn on the seventh switch in the first state. Also, the control circuit may turn on the sixth switch and turn off the seventh switch in the second state.
In one embodiment, the oscillator circuit may further include a reference current source structured to generate a reference current. Also, the first current source may generate a first current that corresponds to the reference current. The second current source may generate a second current that corresponds to the reference current.
In one embodiment, the reference current source may include a β-multiplier self-bias circuit.
In one embodiment, the first transistor, the reference voltage circuit, and the first current source may be configured to also function as a part of the β-multiplier self-bias circuit. This allows the circuit area to be further reduced.
Also, the reference voltage circuit also include a resistor.
In one embodiment, the reference voltage circuit may include a reference voltage source.
In one embodiment, the reference voltage circuit may include an NMOS transistor having a gate that receives a bias voltage.
In one embodiment, the control circuit may include: a flipflop structured to be set according to the first voltage and to be reset according to the second voltage; and a pulse generator structured to generate a discharging control signal to be asserted in a predetermined period in response to a state transition of the flipflop.
Description will be made below regarding preferred embodiments with reference to the drawings. The same or similar components, members, and processes are denoted by the same reference numerals, and redundant description thereof will be omitted as appropriate. The embodiments have been described for exemplary purposes only and are by no means intended to restrict the present invention. Also, it is not necessarily essential for the present invention that all the features or a combination thereof be provided as described in the embodiments.
In the present specification, a state represented by the phrase “the member Ais coupled to the member B” includes a state in which the member A is indirectly coupled to the member B via another member that does not substantially affect the electric connection between them, or that does not damage the functions or effects of the connection between them, in addition to a state in which they are physically and directly coupled.
Similarly, a state represented by the phrase “the member C is provided between the member A and the member B” includes a state in which the member A is indirectly coupled to the member C, or the member B is indirectly coupled to the member C via another member that does not substantially affect the electric connection between them, or that does not damage the functions or effects of the connection between them, in addition to a state in which they are directly coupled.
A first current source CS1 generates a first current Ir. The second current source CS2 generates a second current Ic. The first current Ir and the second current Ic are each generated according to a reference current Iref generated by the reference current source 140.
The first transistor M1 is arranged with its drain coupled to the first current source CS1. The reference voltage circuit 110 generates a reference voltage Vr at the source of the first transistor M1.
The second transistor M2 is arranged with its source coupled to a first end A of the capacitor C1, its drain coupled to a first node N1, and its gate coupled to a gate of the first transistor M1. The third transistor M3 is arranged with its source coupled to a second end B of the capacitor C1, its drain coupled to the second node N2, and its gate coupled to the gate of the first transistor M1. A bias voltage Von generated at the gate of the first transistor M1 is supplied to the gates of the second transistor M2 and the third transistor M3.
The first switch SW1 is coupled between the first node N1 and the second current source C2. The second switch SW2 is coupled between the second node N2 and the second current source CS2.
The charging/discharging circuit 120 includes a third switch SW3 coupled between the first end A of the capacitor C1 and the ground and a fourth switch SW4 coupled between the second end B of the capacitor C1 and the ground. The charging/discharging circuit 120 further includes a fifth switch SW5 coupled in parallel with the capacitor C1.
The control circuit 130 controls the first switch SW1 to the fifth switch SW5 based on the first voltage VA generated at the first node N1 and the second voltage VB generated at the second node N2.
The control circuit 130 switches between (i) the first state ϕA in which the first switch SW1 and the fourth switch SW4 are turned off and the second switch SW2 and the third switch SW3 are turned on, and (ii) the second state ϕB in which the first switch SW1 and the fourth switch SW4 are turned on and the second switch SW2 and the third switch SW3 are turned off. Furthermore, the control circuit 130 controls the charging/discharging circuit 120 so as to discharge the capacitor C1 in a discharging period ϕdischg, which is the first portion of the first state ϕA, and a discharging period ϕdischg, which is the first portion of the second state ϕB. With the present embodiment, in the discharging period ϕdischg, the fifth switch SW5 is turned on so as to reset the charge stored in the capacitor C1. In
The above is the configuration of the oscillator circuit 100. Next, description will be made regarding the operation thereof.
During the discharging period Odischg, which is the first portion of the first state ϕA, the fifth switch SW5 is turned on. Accordingly, the voltage VcB at the second end B of the capacitor C1 becomes equal to the voltage VcA at the first end A.
After the discharging period ϕdischg ends, the fifth switch SW5 is turned off. In this state, the capacitor C1 is charged by the second current Ic. Accordingly, the voltage VcB at the second end B rises with time. This leads to an increase in the second voltage VB at the second node N2.
The oscillator circuit 100 operates as a comparator that compares a reference voltage Vr with the voltage VcB at the second end B of the capacitor C1 in the first state ϕA. When the second voltage VB exceeds a given threshold value Vt, the control circuit 130 transits to the second state ϕB.
In the second state ϕB, the oscillator circuit 100 provides an operation that is symmetrical to that in the first state ϕA. That is to say, the first voltage VA rises with time. When the first voltage VA exceeds the threshold value Vt, the control circuit 130 transits to the first state ϕA.
At the time to, the oscillator circuit 100 becomes the first state ϕA. In this state, the third switch SW3 is turned on. Accordingly, the voltage VcA at the first end A of the capacitor C1 decreases. Furthermore, the first portion of the first state ϕA functions as the discharging period ϕdischg. In this period, the fifth switch SW5 is turned on. Accordingly, the voltage VcB at the second end B approaches the voltage VcA at the first end A.
When the discharging period ϕdischg ends and the fifth switch SW5 is turned off at the time t1, the voltage VcB rises with a constant slope determined by the second current Ic. At the time t2 after the time constant τCR determined by the circuit constant elapses from the time t1, the voltage VcB exceeds the reference voltage Vr. In this state, the voltage VB increases together with the voltage VcB and exceeds a judgment threshold voltage Vt of the control circuit 130. Accordingly, the control circuit 130 transits to the second state ϕB at the time t3 after a delay time TCOMP defined for comparison elapses.
When the oscillator circuit 100 becomes the second state ϕB at the time t3, the fourth switch SW4 is turned on, leading to a decrease in the voltage VcB at the second end B of the capacitor C1. Furthermore, the first portion of the second state ϕB functions as the discharging period ϕdischg. In this period, the fifth switch SW5 is turned on. Accordingly, the voltage VcA at the first end A approaches the voltage VcB at the second end B.
When the discharging period Odischg ends and the fifth switch SW5 is turned off at the time t4, the voltage VcA rises with a constant slope determined by the second current Ic. The voltage VcA exceeds the reference voltage Vr at the time t5. In this state, the voltage VA rises together with the voltage VcA and exceeds a judgment threshold voltage Vt of the control circuit 130. Accordingly, the control circuit 130 transits to the first state ϕA at the time to after the delay time τcomp defined for comparison elapses.
The above is the operation of the oscillator circuit 100. The oscillation period TOSC of the oscillator circuit 100 is represented by the following Expression.
Here, τdischg represents the length of the discharging period ϕdischg.
The advantage of the oscillator circuit 100 can be clearly understood based on a comparison with an oscillator circuit 100R according to a comparison technique. Description will be made regarding the comparison technique.
In the comparison technique, the discharging period ϕdischg is not provided. The control circuit 130R alternately repeats the first state ϕA and the second state ϕB based on the first voltage VA at the first node N1 and the second voltage VB at the second node N2.
In the second state ϕB before the time to, the fourth switch SW4 is turned on. Accordingly, the voltage VcB across the capacitor C2 becomes 0 V.
At the time to, the oscillator circuit 100R becomes the first state ϕA. In this state, the third switch SW3 is turned on. Accordingly, the voltage VcA across the capacitor C1 decreases.
In the first state ϕA, the voltage VcB across the second capacitor C2 rises with a constant slope determined by the second current Ic. At the time t2, the voltage VcB exceeds the reference voltage Vr. In this state, the voltage VB rises together with the voltage VcB and exceeds the judgment threshold voltage Vt of the control circuit 130. Accordingly, at the time t3 after the delay time τcomp defined for comparison elapses, the control circuit 130 transits to the second state ϕB.
When the oscillator circuit 100R becomes the second state ϕB at the time t3, the voltage VcA across the first capacitor C1 rises with a constant slope determined by the second current Ic. The voltage VcA exceeds the reference voltage Vr at the time t5. In this state, the voltage VA rises together with the voltage VcA and exceeds the judgment threshold voltage Vt of the control circuit 130. Accordingly, the o control circuit 130 transits to the first state ϕA at the time to after the delay time τcomp defined for comparison elapses.
The above is the operation of the oscillator circuit 100R. With the comparison technique employing the two capacitors C1 and C2, this provides the following advantages.
This is capable of generating a pulse signal with a duty cycle of 50%.
During a period in which one of the two capacitors C1 and C2 is being charged, the other capacitor (C2 or C1) is being discharged. With this, the period Tdelay in which the capacitor C2 (C1) is being discharged has no effect on the oscillation period TOSC. Accordingly, the oscillation period TOSC is determined by the comparison time τcomp and the time constant τCR.
This allows the discharging time Tdelay to be designed to be short. This allows the oscillation period TOSC to be easily shortened. In other words, this allows the oscillation frequency fOCS(=1/TOSC) to be easily increased.
However, the oscillator circuit 100 according to the comparison technique requires two capacitors C1 and C2. The capacitors C1 and C2 each occupy a relatively large area on a semiconductor substrate. This leads to difficulty in designing the oscillator circuit 100R to have a compact size.
Returning to the embodiment, description will be made. The oscillator circuit 100 according to the embodiment provides the three advantages obtained with the comparison technique. In addition, the present embodiment allows the number of the capacitors to be reduced to one. This allows the circuit area to be reduced.
The present disclosure encompasses various kinds of apparatuses and methods that can be regarded as a block configuration or a circuit configuration shown in
The pulse generator 134 generates a discharging control signal ϕdischg based on at least one of the outputs Q and/Q (“/” represents logical inversion) of the flipflop 132. During the discharging time τdischg, the pulse generator 134 generates a pulse signal (discharging control signal ϕdischg) that becomes a predetermined level (e.g., high level) in response to the state transition of the flipflop 132.
The reference current source 140 includes a so-called β-multiplier self-bias circuit. Specifically, the reference current source 140 includes NMOS transistors M11 and M13, PMOS transistors M12 and M14, and a resistor R11. The first current source CS1 includes a fourth transistor M4. The second current source CS2 includes a fifth transistor M5. The fourth transistor M4 and the fifth transistor M5 form a current mirror circuit together with the transistor M12 of the reference current source 140. A first current Ir that is proportional to the reference current Iref generated by the reference current source 140 flows through the fourth transistor M4. A second current Ic that is proportional to the reference current Iref flows through the fifth transistor M5.
Furthermore, in the present embodiment, the reference voltage circuit 110 includes a first resistor R1. Accordingly, the reference voltage Vr is represented by Ir×R1.
Similarly, the inverters INV3 and INV4 delay the inverting output/Q of the previous SR flip-flop. The AND gate AND2 generates the logical AND of the inverting output/Q after the delay and the inverting output/Q before the delay. The output of the AND gate AND2 is configured as a pulse signal that becomes the high level during the delay time τdischg from a positive edge of the inverting output/Q.
The OR gate OR1 generates the logical OR of the outputs of the AND gates AND1 and AND2, and outputs the logical OR as the discharging control signal ϕdischg.
With the embodiment 2, this allows the circuit area and the current consumption to be further reduced as compared with the example 1.
The fifth switch SW5 is configured as an NMOS transistor. The gate of the fifth switch SW5 receives an input of a control signal that is at the high level in the discharging period ϕdischg.
The first switch SW1 and the second switch SW2 are each configured as a PMOS transistor. The PMOS transistor turns on when a low-level signal is input to its gate. Accordingly, the gate of the first switch SW1 receives an input of the first control signal QA that is at the low level in the second state QB. The gate of the second switch SW2 receives an input of the second control signal ϕB in the second state ϕB.
The above is the configuration of the oscillator circuit 100C. Before description of the operation of the oscillator circuit 100C, description will be made with reference to
In the waveform diagram shown in
Description will be made regarding preferable operating points of the reference current source 140D. The PMOS transistors M5, M12, M14, and M15 and NMOS transistors M2, M3, M11, and M13 are each operated in the weak inversion region (sub-threshold region Vgs<Vth). The NMOS transistor M16 is operated in the strong inversion region (Vgs>Vth). The NMOS transistor M15 is operated in the strong inversion region (Vgs>Vth) and the linear region (Vds<VGs−Vth).
With such an arrangement in which the operating points are designed as described above, this is capable of suppressing each current to the order of nanoamperes. This allows each element size to be reduced, thereby allowing the circuit area to be reduced.
With an arrangement employing the resistor R11 as shown in
Furthermore, the resistance characteristics of a MOS transistor have a positive temperature coefficient in the linear region. In contrast, the threshold value Vth of an NMOS transistor has a negative temperature coefficient. Accordingly, by adjusting the size of the transistor M15, this allows the temperature dependence of the current that flows through the β-multiplier self-bias circuit to be adjusted. This allows the frequency drift due to the temperature characteristics of τcomp and τdelay to be adjusted.
In many cases, integrated circuits (ICs) and large scale integration (LSI) are each provided with a reference voltage source such as a bandgap reference circuit. Accordingly, with such an arrangement using a reference voltage generated by the reference voltage source instead of the resistor R11, such an arrangement allows the circuit area to be reduced while suppressing temperature drift of the frequency.
The pulse generator 134F includes inverters INV1 to INV4, and NOR gates NOR1 and NOR2. The output of the NOR gate NOR1 is used as a discharging control signal ϕdischgB for the fifth switch SW5B. The output of the NOR gate NOR2 is used as a discharging control signal ϕdischgA for the fifth switch SW5A.
Furthermore, the output of the inverter INV3 is used as a control signal to be asserted in the first state ϕA. The output of the inverter INV4 is used as a control signal to be asserted in the second state ϕB.
The pulse generator 134F shown in
The configurations of the examples 1 through 7 described above can be combined as desired, and such combinations are also included in the scope of the present disclosure.
The usage of the oscillator circuit 100 is not restricted in particular. For example, the oscillator circuit 100 is suitably employed in a timer circuit.
The present embodiments described using specific terms show only an aspect of the mechanisms and applications of the present disclosure. Rather, various modifications and various changes in the layout can be made without departing from the spirit and scope of the present disclosure defined in appended claims.
An aspect of the technique disclosed in the present specification can be understood as follows.
An oscillator circuit comprising:
The oscillator circuit according to item 1, wherein the charging/discharging circuit further includes a fifth switch coupled in parallel with the capacitor and structured to be turned on in the discharging period.
The oscillator circuit according to item 1, wherein the control circuit turns on the third switch and the fourth switch in the discharging period.
The oscillator circuit according to any one of items 1 through 3, wherein the charging/discharging circuit further comprises:
The oscillator circuit according to any one of items 1 through 4, further comprising a reference current source structured to generate a reference current,
The oscillator circuit according to item 5, wherein the reference current source comprises a β-multiplier self-bias circuit.
The oscillator circuit according to item 6, wherein the first transistor, the reference voltage circuit, and the first current source are structured to also function as a part of the β-multiplier self-bias circuit.
The oscillator circuit according to any one of items 1 through 7, wherein the reference voltage circuit comprises a resistor.
The oscillator circuit according to any one of items 1 through 7, wherein the reference voltage circuit comprises a reference voltage source.
The oscillator circuit according to any one of items 1 through 7, wherein the reference voltage circuit comprises an NMOS transistor with a gate thereof that receives a bias voltage.
The oscillator circuit according to any one of items 1 through 10, wherein the control circuit comprises:
| Number | Date | Country | Kind |
|---|---|---|---|
| 2023-219886 | Dec 2023 | JP | national |