Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that like or equivalent elements are denoted by like reference numerals, and the descriptions thereof are not repeated.
<General Structure>
The output driver 1 includes a current mirror circuit 10 and an output circuit 20.
The current mirror circuit 10 includes current sources 101 and 102 and input transistors 103 and 104. Each of the current sources 101 and 102 is capable of variable control of a current value and is turned ON/OFF according to control signals S101 and S102, respectively, which correspond to display data. The input transistor 103 has a drain connected to the current source 101 and a source connected to the first potential (e.g., supply potential). The drain and gate of the input transistor 103 are coupled together. The input transistor 104 has a drain connected to the current source 102, a source connected to the first potential, and a gate connected to the gate of the input transistor 103.
The output circuit 20 includes output transistors 105p and 105n. The output transistors 105p and 105n are connected in series between the first potential and the second potential (e.g., ground potential). The gate of the output transistor 105p is supplied with the output of the current mirror circuit 10 (drain voltage of the input transistor 104) Vo. The gate of the output transistor 105n is supplied with control signal S105n which corresponds to display data. The drain voltage of the output transistor 105p is output as output voltage Vout of the output circuit 20.
<Operation>
The operation of the output driver 1 shown in
When the display data transitions from “H level” to “L level”, the current source 101 transitions from “OFF” to “ON” in response to control signal S101 while the current source 102 transitions from “ON” to “OFF” in response to control signal S102. Accordingly, a current flows through the input transistor 103 while a current also flows through the input transistor 104 constituting a current mirror structure. As a result, drain voltage Vo of the input transistor 104 approaches “first potential” which is the source potential. When drain voltage Vo reaches a vicinity of “first potential”, the current flowing through the input transistor 104 stops. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “first potential”, no current flows through the output transistor 105p of the output circuit 20. Meanwhile, control signal S105n transitions to “H level” so that the output transistor 105n is turned “ON”. Thus, output voltage Vout of the output circuit 20 (drain voltage of the output transistor 105p) reaches a vicinity of “second potential”.
Then, when display data transitions from “L level” to “H level”, the current source 101 transitions from “ON” to “OFF” in response to control signal S101 while the current source 102 transitions from “OFF” to “ON” in response to control signal S102, so that the currents flowing through the input transistors 103 and 104 stop. Meanwhile, control signal S105n transitions to “L level” so that the output transistor 105n is turned “OFF”. Herein, the slew rate of output voltage Vo of the current mirror circuit 10 is “I/C”. If slew rate “I/C” of output voltage Vo is lower than slew rate “i/CL” of output voltage Vout, drain voltage Vout of the output transistor 105p changes according to the change of the gate voltage of the output transistor 105p (i.e., output voltage Vo of the current mirror circuit 10) because of a feedback caused by the gate-drain capacitance of the output transistor 105p. Since slew rate “I/C” of output voltage Vo is constant, drain voltage Vout of the output transistor 105p changes at a constant rate.
<Effects>
As described above, the output voltage can be changed at a constant rate without dependence of the change of the output voltage on the load capacitance. Thus, driving of high quality can be achieved.
<General Structure>
The potential generator circuit 30 includes a bias resistor (constant current source) 201, a bias voltage generation transistor 202, a current buffer 203, and binary logic circuits 204 and 205. The bias resistor 201 and bias voltage generation transistor 202 are connected in series between the first potential and the second potential. The gate and drain of the bias voltage generation transistor 202 are coupled together. The current buffer 203 receives a drain voltage of the bias voltage generation transistor 202 (bias voltage VB) at an input terminal. The other input terminal and output terminal of the current buffer 203 are coupled together. Each of the binary logic circuits 204 and 205 receives the output of the current buffer 203 (bias voltage VB) at a power input terminal and the second potential at the other power input terminal. The binary logic circuit 204 outputs any one of “output of the current buffer 203” and “second potential” according to control signal S200 which corresponds to display data. The binary logic circuit 205 outputs any one of “output of the current buffer 203” and “second potential” according to the output of the binary logic circuit 204.
In the current mirror circuit 10, the current source transistor 206 is connected between the input transistor 103 and the second potential and receives the output of the binary logic circuit 204 at the gate. The current source transistor 207 is connected between the input transistor 104 and the second potential and receives the output of the binary logic circuit 205 at the gate.
Although in
Alternatively, the third potential may be equal to the fifth potential, or the fourth potential may be equal to the sixth potential. Alternatively, the third and fifth potentials may be generated by the current buffer 203, or the fourth and sixth potentials may be generated by the current buffer 203.
<Operation>
The operation of the output driver 1 shown in
When control signal S200 transitions from “bias voltage VB” to “second potential” (i.e., display data transitions from “H level” to “L level”), the output of the binary logic circuit 204 becomes equal to “output of the current buffer (bias voltage VB)” while the output of the binary logic circuit 205 becomes equal to “second potential”. As a result, in the current mirror circuit 10, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 206. Meanwhile, the current flowing through the current source transistor 207 stops. A current which has a current value equal to the current of the current source transistor 206 flows through the input transistor 103, and a current also flows through the input transistor 104 constituting a current mirror structure. As a result, drain voltage Vo of the input transistor 104 approaches “first potential” which is the source voltage. When drain voltage Vo reaches a vicinity of “first potential”, the current flowing through the input transistor 104 stops. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “first potential”, no current flows through the output transistor 105p of the output circuit 20. Meanwhile, control signal S105n transitions to “H level” so that the output transistor 105n is turned “ON”. Thus, output voltage Vout of the output circuit 20 reaches a vicinity of “second potential”.
Then, when control signal S200 transitions from “second potential” to “bias voltage VB” (i.e., display data transitions from “L level” to “H level”), the output of the binary logic circuit 204 becomes equal to “second potential” while the output of the binary logic circuit 205 becomes equal to “output of the current buffer (bias voltage VB)”. In the current mirror circuit 10, the current flowing through the current source transistor 206 stops, and accordingly, the currents flowing through the input transistors 103 and 104 also stop. Meanwhile, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 207. Further, control signal S105n transitions to “L level” so that the output transistor 105n is turned “OFF”. At this point, the slew rate of output voltage Vo of the current mirror circuit 10 is “I/C”. If slew rate “I/C” of output voltage Vo is lower than slew rate “i/CL” of output voltage Vout, drain voltage Vout of the output transistor 105p changes according to the change of the gate voltage of the output transistor 105p (i.e., output voltage Vo of the current mirror circuit 10) because of a feedback caused by the gate-drain capacitance of the output transistor 105p. Since slew rate “I/C” of output voltage Vo is constant, drain voltage Vout of the output transistor 105p changes at a constant rate.
<Effects>
As described above, “bias voltage” and “second potential” are input as supplies to each of the binary logic circuits, and driving of the current source transistors is controlled according to the outputs of the binary logic circuits. With this feature, current ON/OFF control can readily be realized.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When control signal S200 corresponding to display data transitions from “second potential” to “bias voltage VB”, the output of the binary logic circuit 204 becomes equal to “second potential” while the output of the binary logic circuit 205 becomes equal to “output of the current buffer (bias voltage VB)”. As a result, as in the output driver 1 shown in
Then, when control signal S200 transitions from “bias voltage VB” to “second potential”, the output of the binary logic circuit 204 becomes equal to “output of the current buffer (bias voltage VB)” while the output of the binary logic circuit 205 becomes equal to “second potential”. As a result, in the current mirror circuit 10, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 206. Meanwhile, the current flowing through the current source transistor 207 stops. At this point, if the current source transistors 206 and 207 have the same current drivability, the current flowing through the input transistor 104 is N times the current flowing through the input transistor 103. Thus, drain voltage Vo of the input transistor 104 can be transitioned to “first potential” N times faster as compared with the output driver of
<Effects>
As described above, the output transistor of the output circuit can be quickly turned OFF.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When control signal S200 corresponding to display data transitions from “second potential” to “bias voltage VB”, the output of the binary logic circuit 204 becomes equal to “second potential” while the output of the binary logic circuit 205 becomes equal to “output of the current buffer (bias voltage VB)”. As a result, as in the output driver 1 shown in
Then, when control signal S200 transitions from “bias voltage VB” to “second potential”, the output of the binary logic circuit 204 becomes equal to “output of the current buffer (bias voltage VB)” while the output of the binary logic circuit 205 becomes equal to “second potential”. As a result, in the current mirror circuit 10, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 206. Meanwhile, the current flowing through the current source transistor 207 stops. At this point, drain voltage Vo of the input transistor 104 approaches “first potential”, but the output transistor 105p of the output circuit 20 is not immediately turned “OFF”. If the output transistor 105n should be turned ON before the output transistor 105p is turned “OFF”, a through current would flow between the output transistors 105p and 105n. However, in this embodiment, the delay circuit 401 delays the time for the output transistor 105n of transition from “OFF” to “ON”, and therefore, the through current is prevented.
<Effects>
As described above, the time of transition for the output transistor of the output circuit from “OFF” to “ON” can be delayed, and therefore, the through current is prevented.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When control signal S200 transitions from “bias voltage VB” to “second potential”, the output of the binary logic circuit 204 becomes equal to “output of the current buffer (bias voltage VB)” while the output of the binary logic circuit 205 becomes equal to “second potential”. As a result, in the current mirror circuit 10, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 206. Meanwhile, the current flowing through the current source transistor 207 stops. A current which has a current value equal to the current of the current source transistor 206 flows through the input transistor 103, and a current also flows through the input transistor 104 constituting a current mirror structure. As a result, drain voltage Vo of the input transistor 104 approaches “first potential” which is the source voltage. When drain voltage Vo reaches a vicinity of “first potential”, the current flowing through the input transistor 104 stops. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “first potential”, no current flows through the output transistor 105p of the output circuit 20. Meanwhile, control signal S105n transitions to “H level” so that the output transistor 105n is turned “ON”. Thus, output voltage Vout of the output circuit 20 reaches a vicinity of “second potential”.
Then, when control signal S200 transitions from “second potential” to “bias voltage VB”, the output of the binary logic circuit 204 becomes equal to “second potential” while the output of the binary logic circuit 205 becomes equal to “output of the current buffer (bias voltage VB)”. In the current mirror circuit 10, the current flowing through the current source transistor 206 stops, and accordingly, the currents flowing through the input transistors 103 and 104 also stop. Meanwhile, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 207. Further, control signal S105n transitions to “L level” so that the output transistor 105n is turned “OFF”. At this point, the slew rate of output voltage Vo of the current mirror circuit 10 is “I/(C+Cf)”. If slew rate “I/(C+Cf)” of output voltage Vo is lower than slew rate “i/CL” of output voltage Vout, drain voltage Vout of the output transistor 105p changes according to the change of the gate voltage (output voltage Vo) of the output transistor 105p because of a feedback caused by the gate-drain capacitance of the output transistor 105p. Since slew rate “I/(C+Cf)” of output voltage Vo is constant, drain voltage Vout of the output transistor 105p changes at a constant rate.
<Effects>
As described above, the slew rate can be “I/(C+Cf)”. Although in the above-described example the gate-drain capacitance of the output transistor, “C”, exhibits voltage dependency, the additional capacitor (=“Cf”) may not exhibit voltage dependency or may exhibit arbitrary voltage dependency. With such a feature, more optimum control of the slew rate can be achieved.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When display data transitions from “L level” to “H level”, the current sources 101 and 601 transition from “ON” to “OFF” while the current source 102 transitions from “OFF” to “ON”. Accordingly, the current flowing through the input transistor 103 stops, and the current flowing through the input transistor 104 constituting a current mirror structure also stops. As a result, drain voltage Vo of the input transistor 104 is induced to the “second potential” side by the current source 102 so that drain voltage Vo reaches a vicinity of “second potential”. At this point, control signal S105n transitions to “L level” so that the output transistor 105n is turned “OFF”. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “second potential”, a current flows through the output transistor 105p of the output circuit 20, so that output voltage Vout of the output circuit 20 (drain voltage of the output transistor 105p) reaches a vicinity of “first potential”.
Then, when display data transitions from “H level” to “L level”, the current sources 101, 102 and 601 receive control signals S101, S102 and S601, respectively, so that the current sources 101 and 601 transition from “OFF” to “ON” while the current source 102 transitions from “ON” to “OFF”. As a result, currents flow through the input transistors 103 and 104. At this point in time, drain voltage Vo of the input transistor 104 approaches “first potential” which is the source voltage. When drain voltage Vo reaches a vicinity of “first potential”, the current flowing through the input transistor 104 stops. Meanwhile, control signal S105n transitions to “H level” so that the output transistor 105n is turned “ON”. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “first potential”, no current flows through the output transistor 105p of the output circuit 20, so that output voltage Vout of the output circuit 20 reaches a vicinity of “second potential”. Meanwhile, to prevent a current from continuing to flow through the input transistor 103, the current source 101 stops in response to control signal S101 after drain voltage Vo of the input transistor 104 is stabilized at the vicinity of “first potential”. At this point, the current keeps flowing through the current source 601, so that drain voltage Vo of the input transistor 104 stays at the vicinity of “first potential”.
<Effects>
As described above, the current source 601 which has a small current value as compared with the current source 101 is connected to the drain of the input transistor 103. This feature reduces the through current from the current source 101 and realizes an output driver which requires reduced-power.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When the display data transitions from “H level” to “L level”, the current source 101 transitions from “OFF” to “ON” while the current sources 102 and 701 transition from “ON” to “OFF”. Accordingly, a current flows through the input transistor 103 while a current also flows through the input transistor 104 constituting a current mirror structure. As a result, drain voltage Vo of the input transistor 104 approaches “first potential” which is the source potential. When drain voltage Vo reaches a vicinity of “first potential”, the current flowing through the input transistor 104 stops. Meanwhile, control signal S105n transitions to “H level” so that the output transistor 105n is turned “ON”. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “first potential”, no current flows through the output transistor 105p of the output circuit 20. Thus, output voltage Vout of the output circuit 20 (drain voltage of the output transistor 105p) reaches a vicinity of “second potential”.
Then, when display data transitions from “L level” to “H level”, the current source 101 transitions from “ON” to “OFF” while the current sources 102 and 701 transition from “OFF” to “ON”, so that the currents flowing through the input transistors 103 and 104 stop. Meanwhile, control signal S105n transitions to “L level” so that the output transistor 105n is turned “OFF”. At this point, the slew rate of output voltage Vo of the current mirror circuit 10 is “(I+Is)/C”. Thereafter, if the ON conditions of the transistor 702 are dissatisfied because of the relationship between the source voltage of the transistor 702 (output voltage Vo of the current mirror circuit 10) and the gate voltage of the transistor 702 (output voltage Vout of the output circuit 20), namely, if the transistor 702 is turned “OFF”, the slew rate of output voltage Vo results in “I/C”. Herein, in the case where load capacitance CL is small and output voltage Vout of the output circuit 20 changes fast, the slew rate of output voltage Vo of the current mirror circuit 10 decreases within a short period of time as compared with the case where load capacitance CL is large. Therefore, dependency on the output load can be suppressed. If slew rate “I/C” of output voltage Vo is lower than slew rate “i/CL” of output voltage Vout, drain voltage Vout of the output transistor 105p changes according to the change of the gate voltage of the output transistor 105p (output voltage Vo) because of a feedback caused by the gate-drain capacitance of the output transistor 105p. Since slew rate “I/C” of output voltage Vo is constant, drain voltage Vout of the output transistor 105p changes at a constant rate.
<Effects>
As described above, in the case where the load capacitance is small and the output voltage of the output circuit changes fast, the slew rate of the output voltage of the current mirror circuit decreases within a short period of time as compared with the case where the load capacitance is large. Therefore, dependency on the output load can be suppressed.
<General Structure>
<Operation>
The operation of the output driver 1 shown in
When control signal S200 transitions from “second potential” to “bias voltage VB” (i.e., display data transitions from “L level” to “H level”), the output of the binary logic circuit 204 becomes equal to “second potential” while the output of the binary logic circuit 205 becomes equal to “bias voltage VB”. As a result, the current flowing through the current source transistor 206 stops, and accordingly, the currents flowing through the input transistors 103 and 104 also stop. Meanwhile, a current which corresponds to the output of the binary logic circuit 205 (a current determined by bias voltage VB) flows through the current source transistor 207. Accordingly, drain voltage Vo of the current source transistor 207 approaches “second potential” which is the source voltage. When drain voltage Vo reaches a vicinity of “second potential”, the current flowing through the current source transistor 207 stops. At this point, control signal S105p transitions to “L level” so that the output transistor 105p is turned “ON”. Since output voltage Vo of the current mirror circuit 10 reaches a vicinity of “second potential”, no current flows through the output transistor 105n of the output circuit 20, so that output voltage Vout of the output circuit 20 (drain voltage of the output transistor 105n) reaches a vicinity of “first potential”.
Then, when control signal S200 transitions from “bias voltage VB” to “second potential” (i.e., display data transitions from “H level” to “L level”), the output of the binary logic circuit 204 becomes equal to “bias voltage VB” while the output of the binary logic circuit 205 becomes equal to “second potential”. As a result, the current flowing through the current source transistor 207 stops. Meanwhile, a current which corresponds to the output of the binary logic circuit 204 (a current determined by bias voltage VB) flows through the current source transistor 206. A current which has a current value equal to the current of the current source transistor 206 flows through the input transistor 103, and a current also flows through the input transistor 104 constituting a current mirror structure. Meanwhile, control signal S105p transitions to “H level” so that the output transistor 105p is turned “OFF”. At this point, the slew rate of output voltage Vo of the current mirror circuit 10 is “I/C”. If slew rate “I/C” of output voltage Vo is lower than slew rate “i/CL” of output voltage Vout, drain voltage Vout of the output transistor 105n changes according to the change of the gate voltage of the output transistor 105n (output voltage Vo) because of a feedback caused by the gate-drain capacitance of the output transistor 105n. Since slew rate “I/C” of output voltage Vo is constant, drain voltage Vout of the output transistor 105n changes at a constant rate.
<Effects>
As described above, the change of the output voltage of the output circuit does not depend on the load capacitance in the case where the output voltage of the current mirror circuit is supplied to an N-channel transistor of the output circuit as well as in the case where it is supplied to a P-channel transistor of the output circuit. Thus, driving of high quality can be realized.
<General Structure>
<Operation>
The operation of the display device shown in
<Effects>
As described above, driving is realized with small load dependency. Therefore, driving is realized with stable output waveform irrespective of the largeness of wire load coupling capacitance due to display data. Thus, a display device capable of displaying high quality images can be realized.
An output driver and display device according to the present invention relate to a capacitive load driver and are especially useful for a display driver for PDP (Plasma Display Panel), etc. Also, the output driver is applicable to a driver for a liquid crystal panel which utilizes high breakdown voltage processes.
Number | Date | Country | Kind |
---|---|---|---|
2006-203342 | Jul 2006 | JP | national |