Number | Name | Date | Kind |
---|---|---|---|
4983860 | Yim et al. | Jan 1991 | |
4988888 | Hirose et al. | Jan 1991 | |
4992677 | Ishibashi et al. | Feb 1991 | |
5057711 | Lee et al. | Oct 1991 | |
5124577 | Davis et al. | Jun 1992 | |
5151621 | Goto | Sep 1992 | |
5237213 | Tanoi | Aug 1993 | |
5311076 | Park et al. | May 1994 | |
5336947 | Lehning | Aug 1994 | |
5418472 | Moench | May 1995 |
Entry |
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F. Miyaji, K. Seno, H. Satoh, Y. Tomo, M. Sasaki and K. Kobayashi, "A 14ns 0.35 um 4Mb CMOS SRAM with an Output Preconditioning Circuit," ULSI R&D Group, Atsugi Technology Center, Sony Corp. |
L. Childs, K. Jones, R. Chang, M. Bader, R. Yu and K. Wang, "A 16ns 512Kx8 CMOS SRAM with Power Saving and Output Buffer Noise Reduction Features," Memory Product Division, Motorola Inc. |