The present invention relates to a technology that is advantageously applied to arrangements such as a power source circuit, a power supply system, and an electronic apparatus using an over voltage detection circuit.
The technologies studied by the inventors of the present invention for a power source circuit, a power supply system, and an electronic apparatus include the following. For example, a power supply used for an electronic apparatus is usually equipped with an over voltage detection circuit for protecting the power supply itself and the elements of electronic circuits that are the load.
In general, many electronic apparatuses are configured as shown in
One prior-art disclosures dealing with an over voltage detection circuit is found, for example, in JP-A-7-322609, and such a circuit is shown in
Another example of an over voltage detection circuit is shown in
The over voltage detection circuit described above prevents the output voltage of the power supply from being above a predetermined setting value. It also protects a circuit which is a load from being damaged, and protects the internal components of the power supply itself from being damaged.
However, because the difference between the power supply rated voltage and the absolute maximum rated voltage of a semiconductor device has recently become smaller, and because, in a redundant parallel power supply system employed for increasing the reliability of the power supply, the setting value of an over voltage detection circuit is set to a voltage close to the rated voltage of a semiconductor device, conventional over voltage detection circuits produce some problems.
For example, when the absolute maximum rated voltage of a semiconductor device is 110% and the allowable operation range is ±5%, that is, from 95% to 105%, of the rated voltage, and when the power supply noise generated by the operation of a semiconductor device reaches ±5% of the rated voltage, the over voltage detection circuit must be set equal to or higher than 105% and equal to or lower than 110%, that is, within 107.5%±2.5%, of the rated voltage. However, it is sometimes difficult to attain this precision because of problems associated with the design of an over voltage detection circuit, such as the cost.
A redundant parallel power supply system sometimes creates more difficult problems. A redundant parallel power supply system is used such that, where N power source circuits are required for the load current, more power source circuits, for example, N+1 circuits, are provided for parallel operation. Even if one of them fails, this configuration ensures continued normal operation on the other N circuits and increases the reliability of the power supply system. This power system allows an electronic apparatus to continue the normal operation, and to increase the reliability of the electronic apparatus.
In such a redundant parallel power supply system, the need to keep the output voltage within the allowable operation range of a semiconductor device requires the voltage of the over voltage detection circuit to be set within the allowable operation range of the semiconductor device. However, the operation of a semiconductor device sometimes generates power supply noises that nearly reach the allowable operation range. In such a case, the voltage of the over voltage detection circuit cannot be set, that is, a contradicting condition occurs that the design range becomes zero or negative. For example, when the allowable operation range is ±5% of the rated voltage, that is, from 95% to 105%, and when the power supply noise generated by the operation of the semiconductor device is ±5% of the rated voltage, that is, from 95% to 105%, of the rated voltage, the voltage of the over voltage detection circuit must be set equal to or higher than 105% and equal to or lower than 105% of the rated voltage. This is impossible to implement.
To solve this situation, it is an object of the present invention to provide a technology that makes it possible to design an over voltage detection circuit even under conditions in which it could not be designed in the prior art. It is also an object to provide a technology that protects devices from being damaged or from malfunctioning by introducing means for implementing the time response characteristics to an over voltage detection circuit with particular attention to the noise characteristics of the power supply voltage or to the nature of the allowable operation range of a semiconductor device.
To achieve the above and other objects, an over voltage detection circuit according to the present invention has two or more different response speeds and two or more different setting voltages. Alternatively, the over voltage detection circuit comprises two or more voltage comparators each having its own response speed and setting voltage. In addition, the present invention may be applied to a power source circuit that uses the over voltage detection circuit, a power supply system that uses such a power source circuit, and an electronic apparatus that uses such a power supply system.
More specifically, the over voltage detection circuit takes advantage of the characteristics or the nature described below. For example, the power supply noise characteristics have a time response nature. Power supply noises are primarily generated by a change in the current consumed by the operation of an electronic circuit that is the load, and the voltage amplitude of noises Vn is the product of the output impedance Z of the power supply and the change amount ΔI of the current consumption. That is, Vn=Z×ΔI. Here, because the output impedance Z of the power supply has frequency characteristics and the stabilization effect of the output voltage of the power supply is not active at a high frequency, the output impedance becomes the impedance of a capacitor provided at the output terminal. On the other hand, at low frequencies at which the power supply responds, the stabilization effect is active and the output impedance is low. Classifying noise voltage amplitudes into frequency components indicates that a noise voltage amplitude at a frequency lower than the response threshold frequency of the power supply stabilization effect is low and that the noise voltage amplitude at a frequency higher than the response threshold frequency is high. Therefore, at a frequency lower than the response threshold frequency, the noise voltage amplitude is lower than the voltage amplitude of all noises.
The design of an over voltage detection circuit in accordance with the present invention is made possible by introducing the time response characteristics to an over voltage detection circuit with particular attention on this nature. More specifically, a low setting voltage is set for low frequencies, and a high setting voltage is set for high frequencies.
Also, the nature of the allowable operation range of a semiconductor device includes a time response nature. For example, assume that the allowable operation range of a semiconductor is ±5% of the rated voltage and that the generated power supply noise is ±4% of the rated voltage. In this case, for a rated power supply voltage, if the operation reliability of a semiconductor device is 10 years, that is, only one malfunction in 10 years, setting the power supply voltage to 105% of the rated voltage does not stop the operation of the semiconductor device but does decrease the operation reliability. For example, the reliability is decreased to such an extent that one malfunction occurs in one hour. In this example, a 5% increase in the power supply voltage decreases the operation reliability from 10 years (about 90000 hours) to one hour, that is, a decrease by 1/90000. By increasing the power supply voltage by another 5% to 110% of the rated voltage, the operation reliability is decreased by another 1/90000 and the operation reliability is one-hour/90000, that is, 0.04 second. 107.5% of the rated voltage results in 12 seconds of operation reliability. Due to this fact, it can be said that the operation of the power supply voltage at 107.5% of the rated voltage is allowable for a short period of time and that the effect on the operation reliability may be ignored if the operation is performed for about one second. The same holds true with regard to the absolute maximum rating of a semiconductor device.
By establishing the time response characteristics of an over voltage detection circuit based on the above-discussed nature of semiconductor devices, the design of an improved over voltage detection circuit is made possible. More specifically, a low setting voltage is used for a long time, and a high setting voltage for a short time.
As described above, providing means for implementing time response characteristics for an over voltage detection circuit makes it possible to design an improved over voltage detection circuit.
Other objects, features and advantages of the invention will become apparent from the following description of the embodiments of the invention taken in conjunction with the accompanying drawings.
Some embodiments of the present invention will be described below with reference to the drawings. Here, it should be noted that like reference numerals represent like elements throughout the description of the embodiments and that the same description is not repeated regarding such like elements.
On the other hand, a second comparison circuit, which is for low-speed-signal responses, comprises voltage dividing resistors 321 and 322, a capacitor 323, a voltage comparator 327, and a reference voltage source 328. The voltage dividing resistors 321 and 322 are connected in series across the terminal 301 and the terminal 302. The capacitor 323 is connected in parallel with one of the resistors, 322, and the connection point between the voltage dividing resistors 321 and 322 is connected to one of the inputs of the voltage comparator 327. The reference voltage is input from the reference voltage source 328 to the other input of the voltage comparator 327. The second comparison circuit, which has the capacitor 323, is for low-speed-signal responses and does not respond to high-speed input changes, that is, high-frequency components. On the other hand, the first comparison circuit, which has no capacitor, responds to any frequency components including high-speed signals and high frequency components. A high setting voltage is selected for the first comparison circuit, while a low setting voltage is selected for the second comparison circuit. However, in some implementations, a capacitor may be added in parallel to the resistor 312, or between the inputs of the comparator 317, in the first comparison circuit, for noise reduction purposes. This makes the topology of the first and second comparison circuits very similar, but the time constants of the two comparison circuits are different.
To solve the first problem described above, the first and second comparison circuits are set up as follows. In the high-speed-signal first comparison circuit, the voltage dividing resistors 311 and 312 and the reference voltage source 318 are selected so that the setting voltage of the voltage comparator 317 is set at 109% of the rated voltage. In the low-speed-signal second comparison circuit, the voltage dividing resistors 321 and 322 and the reference voltage source 328 are selected so that the setting voltage of the voltage comparator 327 is 106% of the rated voltage. Also, in the second comparison circuit, the capacitor 323 is selected so that the frequency range, to which the low-speed-signal second voltage comparator 327 responds, is within a frequency range that makes the output impedance of the power supply sufficiently small, with the response time being 1 second or shorter. This configuration allows the over voltage detection circuit to be designed even if the error of both comparison circuits is 3%.
That is, the setting voltage of the high-speed-signal voltage comparator 317 ranges from 106% to 112%, including errors. The minimum value of 106%, which is larger than the 105% of the noise potential, does not cause malfunctions, and the duration of the maximum value of 112%, though larger than the absolute maximum rated voltage of 110%, is shorter than one second. Therefore, they produce no problem. In addition, the setting voltage of the low-speed-signal voltage comparator 327 ranges from 103% to 109%, including errors. The minimum value of 103% does not cause malfunctions because of the reduced-noise frequency range, and the upper limit of 109% satisfies the condition because it does not exceed the absolute maximum rated voltage of a semiconductor device. Thus, an over voltage detection circuit may be designed using a voltage comparison circuit with an error of 3%. By contrast, in the prior art, an over voltage detection circuit cannot be designed using a voltage comparison circuit with an error of 3% because the allowable design requirement range is ±2.5%.
To solve the second problem described above, the setting voltage of the high-speed-signal first voltage comparator 317 is set to 107.5 ±2% of the rated voltage, and the setting voltage of the low-speed-signal second voltage comparator 327 is set to 104 ±1% of the rated voltage. Those voltage settings satisfy the design condition. At this time, although the maximum of the setting voltage of the over voltage detection circuit is 109.5%, its duration is one second or shorter. Therefore, no problem is produced. If an over voltage condition continues for one second or longer, the over voltage detection circuit operates at the maximum of 105% of the rated voltage. By contrast, in the prior art, the over voltage detection circuit cannot be designed under this condition.
In the second embodiment, to solve the first and second problems described above, the design condition for an over voltage detection circuit is satisfied by selecting the setting voltages as in the first embodiment. Note that a circuit similar to that in
The power supply system 20 that comprises the DC to DC power supplies 100 and 300 is a fifth embodiment. This power supply system 20, which is stored in a cabinet with the electronic circuit 30 to which power is supplied, forms an electronic apparatus 10. This electronic apparatus 10 is a sixth embodiment. The fifth and sixth embodiments, which have substantially the same effect as the circuit of the fourth embodiment described above, enable a power supply system and an electronic apparatus to be designed.
As detailed in the embodiments described above, the technology according to the present invention enables an over voltage detection circuit to be designed even under load circuit conditions under which it could not be implemented in the prior art. Therefore, a power source, a power supply system, and an electronic apparatus having an over voltage detection circuit not implemented in the prior art can be implemented. That is, because it has been made clear that the noises or voltage characteristics of a semiconductor device produce no problem even if they exceed the ratings for a short time, an over voltage detection circuit satisfying those characteristics may be implemented. That is, the implementation of an over voltage detection circuit having setting voltages that differ between high-speed signals and low-speed signals makes it possible for an over voltage detection circuit to be designed even under conditions under which it could not be designed in the prior art, thus protecting the devices from being damaged or from malfunctioning.
With particular attention on the design conditions of an over voltage detection circuit that becomes more rigorous as the semiconductor device technology advances, and as a result of the study of the noise and voltage characteristics of a semiconductor device, the present invention has implemented an over voltage detection circuit that suits these characteristics. As the semiconductor technology further advances in the future, the technology according to the present invention will become an essential technology.
Although two setting voltages of an over voltage detection circuit, one for high-speed signals and the other for low-speed signals, are used in the embodiments described above, three or more setting voltages may also be possible and are included in the scope of the present invention.
The technology according to the present invention enables an over voltage detection circuit to be designed even under load circuit conditions under which it could not be implemented in the prior art. Therefore, a power source, a power supply system, and an electronic apparatus having an over voltage detection circuit not implemented in the prior art can be implemented through the use of the present invention. That is, an over voltage detection circuit can be designed even under conditions under which it could not be designed in the prior art and, therefore, it becomes possible to protect the devices from being damaged or from malfunctioning.
It should be further understood by those skilled in the art that although the foregoing description has been made based on a description of specific embodiments of the invention, the invention is not limited thereto and various changes and modifications may be made without departing from the spirit of the invention and the scope of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
2001-239092 | Aug 2001 | JP | national |
Number | Name | Date | Kind |
---|---|---|---|
3633101 | Johnson et al. | Jan 1972 | A |
4628433 | Notohamiprodjo | Dec 1986 | A |
5023476 | Watanabe et al. | Jun 1991 | A |
5375032 | Hatakeyama et al. | Dec 1994 | A |
5382839 | Shinohara | Jan 1995 | A |
5498985 | Parle et al. | Mar 1996 | A |
5629608 | Budelman | May 1997 | A |
6127879 | Willis et al. | Oct 2000 | A |
6169808 | Kim | Jan 2001 | B1 |
6301133 | Cuadra et al. | Oct 2001 | B1 |
6320363 | Oglesbee et al. | Nov 2001 | B1 |
6894882 | Maru et al. | May 2005 | B2 |
Number | Date | Country |
---|---|---|
01-174221 | Jul 1989 | JP |
5-236680 | Sep 1993 | JP |
07-177738 | Jul 1995 | JP |
7-322609 | Dec 1995 | JP |
10-243644 | Sep 1998 | JP |
2000-245146 | Sep 2000 | JP |
2001-169459 | Jun 2001 | JP |
Number | Date | Country | |
---|---|---|---|
20030030955 A1 | Feb 2003 | US |