Claims
- 1. Oxide cathode comprising a support and an oxide layer on the support, wherein it furthermore includes particles of a conducting material having a first end incorporated in the support and a second end lodged in the oxide layer, so as to constitute conducting bridges passing through an interface layer forming between the support and the oxide layer.
- 2. Oxide cathode according to claim 1, wherein the conducting material of the particles is a carbide of one or more metals.
- 3. Oxide cathode according to claim 2, wherein the conducting material of the particles is a carbide of one or more metals of Group IVB, and preferably at least one metal from: titanium, zirconium and hafnium.
- 4. Oxide cathode according to claim 2 wherein the conducting material of the particles is a carbide of one or more metals of Group VB, and preferably at least one metal from: vanadium, niobium and tantalum.
- 5. Oxide cathode according to claim 2, wherein the conducting material of the particles is a carbide of one or more metals of Group VIIB, and preferably at least one metal from: chromium, molybdenum and tungsten.
- 6. Oxide cathode according to claim 1, wherein the support is made of metal, preferably a nickel-based metal.
- 7. Electron tube, wherein it comprises an oxide cathode according to claim 1.
- 8. Cathode-ray tube, wherein it comprises an oxide cathode according to claim 1.
- 9. Process for manufacturing an oxide cathode, in which an oxide layer is deposited on a support, the process comprising the steps of:furnishing a surface of the support which is intended to receive the oxide layer with particles of conducting material so that the particles have a first end incorporated in the support and a second end which is exposed; and covering said surface with an oxide layer.
- 10. Process according to claim 9, wherein the step of furnishing the particles of conducting material consists in spreading out the particles over said surface and in applying a force to the particles in order to encrust said first end of the particles in the support.
- 11. Process according to claim 9, wherein the step of furnishing the particles of conducting material consists in incorporating the particles in the support and in making said second end stand out from the support by a surface treatment, for example by means of a selective chemical etching treatment.
- 12. Process according to claim 11, wherein the particles are incorporated in the support during the metallurgical production of the support.
- 13. Process according to claim 11, in which the support is formed by drawing, wherein said second end of the particles is made to stand out before the drawing.
- 14. Process according to claim 11, in which the support is formed by drawing, wherein said second end of the particles is made to stand out after the drawing.
- 15. Process according to claim 9, wherein the conducting material of the particles is a carbide of one or more metals.
- 16. Process according to claim 15, wherein the conducting material of the particles is a carbide of one or more metals of Group IVIB, and preferably at least one metal from: titanium, zirconium and hafnium.
- 17. Process according to claim 15 wherein the conducting material of the particles is a carbide of one or more metals of Group VB, and preferably at least one metal from: vanadium, niobium and tantalum.
- 18. Process according to claim 15, wherein the conducting material of the particles is a carbide of one or more metals of Group VIB, and preferably at least one metal from: chromium, molybdenum and tungsten.
- 19. Process according to claim 9, wherein the support is made of metal, preferably a nickel-based metal.
Priority Claims (1)
| Number |
Date |
Country |
Kind |
| 00 07540 |
Jun 2000 |
FR |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit, under 35 U.S.C. §365 of International Application PCT/FR01/01762, filed Jun. 7, 2001, which was published in accordance with PCT Article 21(2) on Dec. 20, 2001 in French and which claims the benefit of French patent application No. 00/07540 filed Jun. 14, 2000.
PCT Information
| Filing Document |
Filing Date |
Country |
Kind |
| PCT/FR01/01762 |
|
WO |
00 |
| Publishing Document |
Publishing Date |
Country |
Kind |
| WO01/97247 |
12/20/2001 |
WO |
A |
US Referenced Citations (15)
Foreign Referenced Citations (1)
| Number |
Date |
Country |
| 1107589 |
Jan 1956 |
FR |
Non-Patent Literature Citations (1)
| Entry |
| T. Ohira et al. “An Analysis of the Surface of the NI-W Layer of Tungsten Film Coating Cathode”, Applied Surface Science, Elsevier Amsterdam, vol. 146, pp. 47-50. |