Patent Application
20240396519
Embodiments of the disclosure relate to acoustic wave devices, in particular to packaged acoustic wave components, which may also be designated as acoustic wave component packages.
An acoustic wave filter can include a plurality of resonators arranged to filter a radio frequency signal. Example acoustic wave resonators include surface acoustic wave (SAW) resonators and bulk acoustic wave (BAW) resonators. A surface acoustic wave resonator can include an interdigital transductor electrode on a piezoelectric substrate. The surface acoustic wave resonator can generate a surface acoustic wave on a surface of the piezoelectric layer on which the interdigital transductor electrode is disposed. A multi-mode SAW filter can include a plurality of longitudinally coupled interdigital transducer electrodes positioned between acoustic reflectors. Multi-layer piezoelectric substrate (MPS) SAW resonators and temperature compensated (TC) SAW resonators are examples of SAW devices.
Acoustic wave filters can be implemented in radio frequency electronic systems. For instance, filters in a radio frequency front end of a mobile phone can include acoustic wave filters. An acoustic wave filter can be a band pass filter. A plurality of acoustic wave filters can be arranged as a multiplexer. For example, three acoustic wave filters can be arranged as a triplexer. As another example, four acoustic wave filters can be arranged as a quadplexer.
An acoustic wave device, such as a SAW device, can be packaged to define a packaged acoustic wave device or component.
Accordingly, there is a need for a packaged acoustic wave component, in particular a surface acoustic wave (e.g., SAW) package with improved reliability that can withstand the stresses (e.g., from heat cycle testing) during the packaging process.
The innovations described in the claims each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of the claims, some prominent features of this disclosure will now be briefly described.
In a first aspect, a packaged acoustic wave component is disclosed. The packaged acoustic wave component includes a wafer level packaging structure. The wafer level packaging structure has a shield structure base. The packaged acoustic wave component also includes a multi-layer piezoelectric substrate (MPS) including at least one non-conductive layer. The at least one non-conductive layer has a coefficient of thermal expansion that is substantially the same as a coefficient of thermal expansion of the shield structure base.
A coefficient of thermal expansion (CTE) is substantially the same according to this application when a difference between the CTE of the shield structure base and the CTE of the at least one non-conductive layer is 13 ppm/deg or less.
Such a packaged acoustic wave component provides a lower thermal distortion of the wafer level packaging structure and the MPS.
In a second aspect, a radio frequency module is disclosed. The radio frequency module includes a packaged acoustic wave component. The packaged acoustic wave component includes a wafer level packaging structure. The wafer level packaging structure has a shield structure base. The packaged acoustic wave component also includes a multi-layer piezoelectric substrate (MPS) including at least one non-conductive layer. The at least one non-conductive layer has a coefficient of thermal expansion that is substantially the same as a coefficient of thermal expansion of the shield structure base.
In a third aspect, a wireless communication device is disclosed. The wireless communication device includes a radio frequency module comprising a packaged acoustic wave component. The packaged acoustic wave component includes a wafer level packaging structure. The wafer level packaging structure has a shield structure base. The packaged acoustic wave component also includes a multi-layer piezoelectric substrate (MPS) including at least one non-conductive layer. The at least one non-conductive layer has a coefficient of thermal expansion that is substantially the same as a coefficient of thermal expansion of the shield structure base.
In some aspects, the techniques described herein relate to a packaged acoustic wave component including: a wafer level packaging structure having a shield structure base; a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, a difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate being 13 ppm/deg or less; and an interdigital transducer electrode in electrical communication with the piezoelectric layer.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the difference between the coefficient of thermal expansion of the shield structure base and the coefficient of thermal expansion of the support substrate is 10 ppm/deg or less.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the difference between the coefficient of thermal expansion of the shield structure base and the coefficient of thermal expansion of the support substrate is 4 ppm/deg or less.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the coefficient of thermal expansion of the shield structure base has a value around 16.5 ppm/deg.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the coefficient of thermal expansion of support substrate has a value from around 3.5 ppm/deg to around 24 ppm/deg.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the coefficient of thermal expansion of the support substrate has a value from around 4 ppm/deg to around 20 ppm/deg.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the support substrate includes sapphire.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the piezoelectric layer includes lithium tantalate.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the piezoelectric layer includes lithium niobate.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the support substrate includes glass.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the support substrate includes spinel.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the support substrate includes quartz.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the wafer level packaging structure includes a polymeric body having a conductive via passing through the polymeric body.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the shield structure base includes copper. 15.
In some embodiments, the techniques described herein relate to a packaged acoustic wave component wherein the wafer level packaging structure further includes a pillar between the multi-layer piezoelectric substrate and at least a portion of the shield structure base.
In some aspects, the techniques described herein relate to a radio frequency module with a packaged acoustic wave component including: a wafer level packaging structure having a shield structure base; a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, a difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate being 13 ppm/deg or less; and an interdigital transducer electrode in electrical communication with the piezoelectric layer.
In some embodiments, the techniques described herein relate to a radio frequency module wherein the radio frequency module is configured as a front end module.
In some aspects, the techniques described herein relate to a wireless communication device including: a radio frequency module including a packaged acoustic wave component, the packaged acoustic wave component including a wafer level packaging structure having a shield structure base; a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate; and an interdigital transducer electrode in electrical communication with the piezoelectric layer, a difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate being 13 ppm/deg or less; and an antenna operatively coupled to the radio frequency module.
In some embodiments, the techniques described herein relate to a wireless communication device further including a radio frequency amplifier operatively coupled to the radio frequency module and configured to amplify a radio frequency signal.
In some embodiments, the techniques described herein relate to a wireless communication device further including a transceiver in communication with the radio frequency amplifier. 22.
In some aspects, packaged multi-layer piezoelectric substrate surface acoustic wave device including: a multi-layer piezoelectric substrate including a piezoelectric layer and a quartz substrate; an interdigital transducer electrode in electrical communication with the piezoelectric layer; and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C., the packaging structure coupled to the multi-layer piezoelectric substrate, the interdigital transducer electrode positioned between the quartz substrate and the packaging structure.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the coefficient of thermal expansion of the packaging structure is greater than 10 ppm/° C. and equal to or less than 30 ppm/° C.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein a difference between a coefficient of thermal expansion of the quartz substrate and a coefficient of thermal expansion of a shield structure base of the packaging structure is 13 ppm/deg or less.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the packaging structure includes a shield structure base and a pillar at least partially between the multi-layer piezoelectric substrate and the shield structure base.
In some embodiments, the techniques described herein relate to a surface acoustic wave device further includes a second interdigital transducer electrode, at least a portion of the pillar is positioned between the interdigital transducer electrode and the second interdigital transducer electrode.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the
In some embodiments, the techniques described herein relate to packaging structure includes a terminal.
In some embodiments, the techniques described herein relate to a surface acoustic wave device further including a routing structure electrically connected to the interdigital transducer electrode.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the interdigital transducer electrode is electrically coupled to the terminal at least partially through the routing structure.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the terminal is an external electrode, and the routing structure includes a metallization pattern of electrical trace.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein the packaging structure includes copper.
In some embodiments, the techniques described herein relate to a surface acoustic wave device wherein bulk of the packaging structure is copper.
In some aspects, the techniques described herein relate to a radio frequency module including: a packaged multi-layer piezoelectric substrate surface acoustic wave device including a multi-layer piezoelectric substrate having a piezoelectric layer and a quartz substrate, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C., the packaging structure coupled to the multi-layer piezoelectric substrate, the interdigital transducer electrode positioned between the quartz substrate and the packaging structure; and an antenna coupled to the packaged multi-layer piezoelectric substrate surface acoustic wave device.
In some embodiments, the techniques described herein relate to a radio frequency module wherein the coefficient of thermal expansion of the packaging structure is greater than 10 ppm/° C. and equal to or less than 30 ppm/° C.
In some embodiments, the techniques described herein relate to a radio frequency module wherein a difference between a coefficient of thermal expansion of the quartz substrate and a coefficient of thermal expansion of a shield structure base of the packaging structure is 13 ppm/deg or less.
In some embodiments, the techniques described herein relate to a radio frequency module wherein the packaged multi-layer piezoelectric substrate surface acoustic wave device includes a routing structure electrically connected to the interdigital transducer electrode, and the packaging structure includes a terminal electrically coupled to the interdigital transducer electrode at least partially through the routing structure.
In some embodiments, the techniques described herein relate to a radio frequency module further including a package substrate, wherein the packaged multi-layer piezoelectric substrate surface acoustic wave device is electrically coupled to the package substrate through the terminal.
In some aspects, the techniques described herein relate to a wireless communication device including: a filter including a multi-layer piezoelectric substrate having a piezoelectric layer and a quartz substrate, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a packaging structure having a coefficient of thermal expansion greater than 0 ppm/° C. and equal to or less than 35 ppm/° C., the packaging structure coupled to the multi-layer piezoelectric substrate, the interdigital transducer electrode positioned between the quartz substrate and the packaging structure; a transceiver coupled between the filter and a processor; and an antenna coupled to filter.
In some embodiments, the techniques described herein relate to a wireless communication device wherein the coefficient of thermal expansion of the packaging structure is greater than 10 ppm/° C. and equal to or less than 30 ppm/° C.
In some embodiments, the techniques described herein relate to a wireless communication device wherein a difference between a coefficient of thermal expansion of the quartz substrate and a coefficient of thermal expansion of a shield structure base of the packaging structure is 13 ppm/deg or less.
In some embodiments, the techniques described herein relate to a wireless communication device wherein the filter and other plurality of filters are included in a radio frequency front end coupled between the transceiver and the antenna.
The present disclosure relates to U.S. patent application Ser. No. ______ [Attorney Docket SKYWRKS.1312A2], titled “PACKAGED ACOUSTIC WAVE DEVICES WITH MULTILAYER PIEZOELECTRIC SUBSTRATE HAVING QUARTZ SUBSTRATE,” filed on even date herewith, the entire disclosure of which is hereby incorporated by reference herein.
For purposes of summarizing the disclosure, certain aspects, advantages and novel features of the innovations have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment. Thus, the innovations may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other advantages as may be taught or suggested herein.
The following detailed description of certain embodiments presents various descriptions of specific embodiments. However, the innovations described herein can be embodied in a multitude of different ways, for example, as defined and covered by the claims. In this description, reference is made to the drawings where like reference numerals can indicate identical or functionally similar elements. It will be understood that elements illustrated in the figures are not necessarily drawn to scale. Moreover, it will be understood that certain embodiments can include more elements than illustrated in a drawing and/or a subset of the elements illustrated in a drawing. Further, some embodiments can incorporate any suitable combination of features from two or more drawings.
Acoustic wave filters can filter radio frequency (RF) signals in a variety of applications, such as in an RF front end of a mobile phone. An acoustic wave filter can be implemented with surface acoustic wave (SAW) devices. SAW devices include SAW resonators, SAW delay lines, and multi-mode SAW (MMS) filters (e.g., double mode SAW (DMS) filters). Any features of the SAW resonators and/or devices discussed herein can be implemented in any suitable SAW device such as a multilayer piezoelectric substrate (MPS) SAW device.
A multilayer piezoelectric substrate (MPS) surface acoustic wave (SAW) device can include a support substrate, a piezoelectric layer over the support substrate, and an interdigital transducer (IDT) electrode formed with the piezoelectric layer. The thermal dissipation ability of the MPS-SAW device is generally greater than other types of SAW devices, such as a temperature compensated (TC) SAW device that includes a temperature compensation layer over the IDT electrode.
In general, high quality factor (Q), large effective electromechanical coupling coefficient (k2), high frequency ability, and spurious free response can be significant aspects for acoustic wave elements to enable low-loss filters, delay lines, stable oscillators, and sensitive sensors.
Multi-layer piezoelectric substrate (MPS) acoustic wave devices can thermally insulate an interdigital transducer electrode and a piezoelectric layer. By reducing dissipative thermal impedance of the acoustic wave device, the ruggedness and power handling can be improved. Furthermore, MPS acoustic wave devices can include a high power durability filter solution.
Some MPS acoustic wave devices have achieved a packaging structure with copper (Cu) shield based wafer level packagings in combination with a silicon (Si) substrate. However, such approaches have encountered technical challenges related to thermal distortion of the substrate and the wafer level packaging.
A SAW device can be packaged as a packaged SAW device. The packaged SAW device includes the SAW device and a packaging structure coupled to the SAW device. A coefficient of thermal expansion mismatch between the SAW device and the packaging structure can cause mechanical distortion, which can lead to temperature cycle test failures. In TC-SAW devices, typically, the piezoelectric layer (e.g., a lithium niobate layer or a lithium tantalate layer) can have a relatively high coefficient of thermal expansion and a relatively low Young's modulus, and the TC-SAW devices may have a high temperature cycle reliability. However, as compared to MPS-SAW devices the TC-SAW devices typically have lower device performance. A packaging structure that includes a relatively low coefficient of thermal expansion material (e.g., silicon) can be used to reduce a coefficient of thermal expansion mismatch between the substrate of the MPS-SAW devices. However, a silicon packaging structure can cause direct current (DC) leakage in some applications, which can degrade the device performance. The DC leakage can be electrical current leakage through, for example, a substrate of the SAW device.
Various embodiments disclosed herein relate to packaged multilayer piezoelectric substrate (MPS) surface acoustic wave (SAW) devices that enable improved temperature cycle reliability and reduced DC leakage. A packaged MPS-SAW device according to some embodiments includes an MPS-SAW device and a packaging structure coupled to the SAW device. The MPS-SAW device includes a support substrate, a piezoelectric layer, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. The packaging structure can include a shield structure base. A difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate is 10 ppm/deg or less. The support substrate can be a quartz substrate.
Furthermore, the packaged acoustic wave component 100 according to
The at least one non-conductive layer 105a of the MPS 105 has a coefficient of thermal expansion (CTE) that is substantially the same as a CTE of the shield structure base 125 (the metal shield structure base 125m and polymer shield structure base 125p). A CTE is substantially the same according to this application when a difference between the CTE of the shield structure base 125 and the CTE of the at least one non-conductive layer is 13 ppm/deg or less.
In some embodiments, the acoustic wave component 100, 100′ may include a terminal (e.g., an external electrode 130). In some embodiments, the acoustic wave component 100, 100′ may include a routing structure (e.g., a metallization pattern of electrical traces 140) disposed on the piezoelectric layer 106. Further, the acoustic wave component 100, 100′ may be mounted on a printed circuit board or other substrate and the acoustic wave component 100, 100′ may electrically communicate with other devices on the circuit board. The IDT electrode 110 can be electrically coupled to the terminal (e.g., the external electrode 130) at least partially through the metallization pattern of electrical traces 140.
It should be appreciated that although a SAW filter is illustrated in
Advantageously, the SAW filter 100, 100′ has less thermal distortion than an MPS filter with a Si substrate. This can contribute to improving reliability and mechanical ruggedness of the packaged acoustic wave component for packaging processes, in particular in mass production. Furthermore, it can provide a good acoustic energy confinement material for MPS, and a reliable packaging with wafer level packaging thereby maintaining a desired electrical performance.
The packaged acoustic wave component 200 has a wafer level packaging structure 202 having a metal shield structure base 225. The metal shield structure base 225 can be formed as a pad or a layer. The metal shield structure base 225 can be made of or consist of copper, copper alloy or similar metal shields. For example, the metal shield structure base 225 can be a copper pad or copper layer. The metal shield structure base 225 can be configured as a leadframe. The metal shield structure base 225 can include a conductive trace, a conductive line, a conductive plate, and/or a conductive via, and be configured to provide electrical routing at least partially between the IDT electrodes 110 and the external electrode 130.
The packaged acoustic wave component 200 also has a multi-layer piezoelectric substrate (MPS) 205 including at least one non-conductive layer. The MPS 205 can include a support substrate 205a and a piezoelectric layer 210. Preferably, the at least one non-conductive layer (the support substrate 205) is formed from (e.g., includes) or consists of quartz (Qz). However, the at least one non-conductive layer is not limited to quartz. Alternatively, the at least one non-conductive layer can be selected from the group of sapphire, lithium tantalate, lithium niobate, glass, and spinel (MgAlO4).
The at least one non-conductive layer has a coefficient of thermal expansion (CTE) that is substantially the same as a CTE of the metal shield structure base 225. Optionally, a difference between the CTE of the metal shield structure base 225 and the CTE of the at least one non-conductive layer can be 10 ppm/deg or less, in particular 4 ppm/deg or less.
In some embodiments, the metal shield structure base 225 is made of copper. The coefficient of thermal expansion of the metal shield structure base 225 can have a value around 16.5 ppm/deg. Independent of or in combination with that, the CTE of the at least one non-conductive layer can have a value from around 3.5 ppm/deg to around 24 ppm/deg, in particular from around 4 ppm/deg to around 20 ppm/deg. For example, the packaged acoustic wave component 200 includes the MPS 205 with quartz and the metal shield structure base 225 based on copper for lowering the costs of the component 200. The CTE of the quartz based MPS can have a value around 13.7 ppm/deg. The CTE of lithium niobate can have a value around 15.4 ppm/deg, spinel can have a value around 7.3 ppm/deg.
Advantageously, the packaged acoustic wave component 200 has less thermal distortion than an MPS with a Si substrate. This results in improved reliability and mechanical ruggedness of the packaged acoustic wave component 200 for packaging processes, in particular in mass production. Furthermore, it provides a good acoustic energy confinement material for MPS and a reliable packaging with wafer level packaging, thereby maintaining a desired electrical performance.
An MPS acoustic wave resonator or device or die in a packaged acoustic wave component, including any suitable combination of features disclosed herein, can be included in a filter arranged to filter a radio frequency signal in a fifth generation (5G) New Radio (NR) operating band within Frequency Range 1 (FR1). A filter arranged to filter a radio frequency signal in a 5G NR operating band can include one or more MPS acoustic wave resonators disclosed herein. FR1 can range from 410 MHz to 7.125 GHz, for example, as specified in a current 5G NR specification. In 5G applications, the thermal dissipation of the MPS acoustic wave devices disclosed herein can be advantageous. For example, such thermal dissipation can be desirable in 5G applications with a higher time-division duplexing (TDD) duty cycle compared to fourth generation (4G) Long Term Evolution (LTE). One or more MPS acoustic wave devices in accordance with any suitable principles and advantages disclosed herein can be included in a filter arranged to filter a radio frequency signal in a 4G LTE operating band and/or in a filter having a passband that includes a 4G LTE operating band and a 5G NR operating band.
Although
The SAW component 176 shown in
The duplexers 185A to 185N can each include two acoustic wave filters coupled to a common node. The two acoustic wave filters can be a transmit filter and a receive filter. As illustrated, the transmit filter and the receive filter can each be band pass filters arranged to filter a radio frequency signal. One or more of the transmit filters 186A1 to 186N1 can include one or more SAW resonators or packages in accordance with any suitable principles and advantages disclosed herein. Similarly, one or more of the receive filters 186A2 to 186N2 can include one or more SAW resonators in accordance with any suitable principles and advantages disclosed herein. Although
The power amplifier 187 can amplify a radio frequency signal. The illustrated switch 188 is a multi-throw radio frequency switch. The switch 188 can electrically couple an output of the power amplifier 187 to a selected transmit filter of the transmit filters 186A1 to 186N1. In some instances, the switch 188 can electrically connect the output of the power amplifier 187 to more than one of the transmit filters 186A1 to 186N1. The antenna switch 189 can selectively couple a signal from one or more of the duplexers 185A to 185N to an antenna port ANT. The duplexers 185A to 185N can be associated with different frequency bands and/or different modes of operation (e.g., different power modes, different signaling modes, etc.).
The RF front end 422 can include one or more power amplifiers, one or more low noise amplifiers, one or more RF switches, one or more receive filters, one or more transmit filters, one or more duplex filters, one or more multiplexers, one or more frequency multiplexing circuits, the like, or any suitable combination thereof. The RF front end 422 can transmit and receive RF signals associated with any suitable communication standards. The filters 423 can include SAW resonators of a SAW component or package that includes any suitable combination of features discussed with reference to any embodiments discussed above.
The transceiver 424 can provide RF signals to the RF front end 422 for amplification and/or other processing. The transceiver 424 can also process an RF signal provided by a low noise amplifier of the RF front end 422. The transceiver 424 is in communication with the processor 425. The processor 425 can be a baseband processor. The processor 425 can provide any suitable base band processing functions for the wireless communication device 420. The memory 426 can be accessed by the processor 425. The memory 426 can store any suitable data for the wireless communication device 420. The user interface 427 can be any suitable user interface, such as a display with touch screen capabilities.
Although embodiments disclosed herein relate to surface acoustic wave resonators or packages and packaged acoustic wave components, any suitable principles and advantages disclosed herein can be applied to other types of acoustic wave resonators that include an IDT electrode, such as Lamb wave resonators and/or boundary wave resonators. For example, any suitable combination of features of the tilted and rotated IDT electrodes disclosed herein can be applied to a Lamb wave resonator and/or a boundary wave resonator.
Some of the embodiments described above have provided examples in connection with wireless devices or mobile phones. However, the principles and advantages of the embodiments can be used for any other systems or apparatus that have needs for acoustic wave filters.
Such acoustic wave filters can be implemented in various electronic devices. Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products, electronic test equipment, etc. Examples of the electronic devices can also include, but are not limited to, memory chips, memory modules, circuits of optical networks or other communication networks, and disk driver circuits. The consumer electronic products can include, but are not limited to, a mobile phone, a telephone, a television, a computer monitor, a computer, a hand-held computer, a personal digital assistant (PDA), a microwave, a refrigerator, an automobile, a stereo system, a cassette recorder or player, a DVD player, a CD player, a VCR, an MP3 player, a radio, a camcorder, a camera, a digital camera, a portable memory chip, a washer, a dryer, a washer/dryer, a copier, a facsimile machine, a scanner, a multi-functional peripheral device, a wrist watch, a clock, etc. Further, the electronic devices can include unfinished products.
Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Likewise, the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items, that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
Moreover, conditional language used herein, such as, among others, “can,” “could,” “might,” “can,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments or that one or more embodiments necessarily include logic for deciding, with or without author input or prompting, whether these features, elements and/or states are included or are to be performed in any particular embodiment.
Language of degree used herein, such as the terms “approximately,” “about,” “generally,” and “substantially” as used herein represent a value, amount, or characteristic close to the stated value, amount, or characteristic that still performs a desired function or achieves a desired result. For example, the terms “approximately”, “about”, “generally,” and “substantially” may refer to an amount that is within less than 10% of, within less than 5% of, within less than 1% of, within less than 0.1% of, and within less than 0.01% of the stated amount. As another example, in certain embodiments, the terms “generally parallel” and “substantially parallel” refer to a value, amount, or characteristic that departs from exactly parallel by less than or equal to 15 degrees, 10 degrees, 5 degrees, 3 degrees, 1 degree, or 0.1 degree.
The above detailed description of embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise form disclosed above. While specific embodiments of, and examples for, the invention are described above for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize. For example, while processes or blocks are presented in a given order, alternative embodiments may perform routines having steps, or employ systems having blocks, in a different order, and some processes or blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these processes or blocks may be implemented in a variety of different ways. Also, while processes or blocks are at times shown as being performed in series, these processes or blocks may instead be performed in parallel, or may be performed at different times.
The teachings of the invention provided herein can be applied to other systems, not necessarily the system described above. The elements and acts of the various embodiments described above can be combined to provide further embodiments.
While certain embodiments of the inventions have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.
Any and all applications for which a foreign or domestic priority claim is identified in the Application Data Sheet as filed with the present application, including U.S. Provisional Patent Application No. 63/469,000, filed May 25, 2023, titled “PACKAGED ACOUSTIC WAVE DEVICES WITH MULTILAYER PIEZOELECTRIC SUBSTRATE,” are hereby incorporated by reference under 37 CFR 1.57 in their entirety.
| Number | Date | Country | |
|---|---|---|---|
| 63469000 | May 2023 | US |
