Patent Grant
11974440
This application is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2020-0100118, filed on Aug. 10, 2020, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.
The inventive concept relates to a memory device, and more particularly, to a page buffer circuit and a memory device including the page buffer circuit.
Recently, communication devices that have multi-functionality and process large amount of information have been developed, and as such, memory devices have been demanded to have a large capacity and be highly integrated. A memory device may include a page buffer to store data in memory cells or output data from memory cells, and the page buffer may have semiconductor devices such as a transistor. The demand for a decrease in a page buffer size according to an increase in a degree of integration of a memory device and the development of a process technique may cause a decrease in a semiconductor device size, and accordingly, a layout of wirings connected to semiconductor devices may be complicated.
According to an example embodiment, there is provided a memory device comprising: a memory cell array including a plurality of memory cells; and a page buffer circuit connected to the memory cell array, the page buffer circuit being provided in a page buffer region, the page buffer region including a main region and a cache region arranged in a first horizontal direction, and the page buffer circuit comprising a first page buffer unit and a second page buffer unit arranged in the main region in a second horizontal direction, wherein the first page buffer unit comprises a first sensing node and the second page buffer unit comprises a second sensing node, wherein the first sensing node comprises: a first lower metal pattern provided in a lower metal layer; and a first upper metal pattern provided in an upper metal layer provided above the lower metal layer in a vertical direction, and the first upper metal pattern electrically connected to the first lower metal pattern, and wherein the second sensing node comprises: a second lower metal pattern provided in the lower metal layer; and a second upper metal pattern provided in the upper metal layer, the second upper metal pattern electrically connected to the second lower metal pattern, and the second upper metal pattern not adjacent to the first upper metal pattern in the second horizontal direction.
According to another example embodiment, there is provided a memory device comprising: a first semiconductor layer including a plurality of memory cells respectively connected to a plurality of bit lines extending in a first horizontal direction; and a second semiconductor layer provided in a vertical direction that is perpendicular to the first semiconductor layer, the second semiconductor layer including a plurality of page buffers, wherein the plurality of page buffers comprises a first page buffer unit including a first sensing node and a second page buffer unit including a second sensing node, wherein the first sensing node comprises: a first lower metal pattern provided in a lower metal layer; and a first upper metal pattern provided in an upper metal layer provided above the lower metal layer in the vertical direction, and electrically connected to the lower metal pattern, wherein the second sensing node comprises: a second lower metal pattern provided in the lower metal layer; and a second upper metal pattern provided in the upper metal layer, wherein the second page buffer unit is provided adjacent to the first page buffer unit in a second horizontal direction, and wherein the first upper metal pattern is not adjacent to the second upper metal pattern in the second horizontal direction.
According to another example embodiment, there is provided a memory device comprising: a memory cell region including a plurality of memory cells and a first metal pad; and a peripheral circuit region including a second metal pad and connected to the memory cell region in a vertical direction through the first metal pad and the second metal pad, wherein the peripheral circuit region further includes a plurality of page buffers, wherein the plurality of page buffers comprises a first page buffer unit including a first sensing node and a second page buffer unit including a second sensing node, wherein the first sensing node comprises: a first lower metal pattern provided in a lower metal layer; and a first upper metal pattern provided in an upper metal layer provided above the lower metal layer in the vertical direction, and electrically connected to the lower metal pattern, wherein the second sensing node comprises: a second lower metal pattern provided in the lower metal layer; and a second upper metal pattern provided in the upper metal layer, wherein the second page buffer unit is provided adjacent to the first page buffer unit in a second horizontal direction, and wherein the first upper metal pattern is not adjacent to the second upper metal pattern in the second horizontal direction.
According to another example embodiment, there is provided a page buffer circuit provided in a page buffer region including a main region and a cache region provided adjacent to each other in a first horizontal direction, the page buffer circuit comprising: a first sensing latch and a second sensing latch provided in the main region, the first sensing latch and the second sensing latch being adjacent to each other in a second horizontal direction; a first cache latch and a second cache latch provided in the cache region, the first cache latch and the second cache latch being adjacent to each other in the second horizontal direction, and respectively connected to the first sensing latch and the second sensing latch; a lower metal layer including a first lower metal pattern provided above the first and second sensing latches in a vertical direction and corresponding to a first sensing node connected to the first sensing latch, and a second lower metal pattern provided above the first and second sensing latches in the vertical direction corresponding to a second sensing node connected to the second sensing latch; and an upper metal layer including a first upper metal pattern provided above the lower metal layer in the vertical direction and connected to the first lower metal pattern, and a second upper metal pattern provided above the lower metal layer in the vertical direction connected to the second lower metal pattern, wherein the first and second upper metal patterns are not adjacent to each other in the second horizontal direction.
Embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.
Referring to
The memory cell array 100 may be connected to the page buffer circuit 210 through bit lines BL, and may be connected to the row decoder 240 through word lines WL, string select lines SSL, and ground select lines GSL. The memory cell array 100 may include a plurality of memory cells, and the memory cells may be, for example, flash memory cells. Hereinafter, embodiments of the inventive concept will be described in detail for a case, as an example, where the plurality of memory cells are NAND flash memory cells. However, the inventive concept is not limited thereto, and in some example embodiments, the plurality of memory cells may be resistive memory cells such as resistive random access memory (ReRAM), phase change RAM (PRAM) or magnetic RAM (MRAM).
In an example embodiment, the memory cell array 100 may include a three-dimensional memory cell array, the three-dimensional memory cell array may include a plurality of NAND strings, each NAND string may include memory cells respectively connected to word lines vertically stacked on a substrate, and this will be described in detail with reference to
The control circuit 220 may output various kinds of control signals, e.g., a voltage control signal CTRL_vol, a row address X-ADDR, and a column address Y-ADDR, for programming data on the memory cell array 100, reading data from the memory cell array 100, or erasing data stored in the memory cell array 100, based on a command CMD, an address ADDR, and a control signal CTRL. By doing this, the control circuit 220 may generally control various kinds of operations in the memory device 10.
The voltage generator 230 may generate various types of voltages for performing program, read, and erase operations on the memory cell array 100, based on the voltage control signal CTRL_vol. Particularly, the voltage generator 230 may generate a word line voltage VWL, e.g., a program voltage, a read voltage, a pass voltage, an erase voltage, or a program verify voltage. In addition, the voltage generator 230 may further generate a string select line voltage and a ground select line voltage based on the voltage control signal CTRL_vol.
In response to the row address X-ADDR, the row decoder 240 may select one of a plurality of memory blocks, select one of word lines WL of the selected memory block, and select one of a plurality of string select lines SSL. The page buffer circuit 210 may select some of bit lines BL in response to the column address Y-ADDR. For example, the page buffer circuit 210 operates as a write driver or a sensing amplifier according to an operation mode.
The page buffer circuit 210 may include a plurality of page buffers PB respectively connected to a plurality of bit lines BL. In the example embodiment, page buffer units (e.g., PBU0 to PBU7 of
In an example embodiment, a sensing node of each page buffer unit may be implemented using a plurality of metal layers provided in a vertical direction, and accordingly, a capacitance of the sensing node may increase. According to an example embodiment, a “metal layer” may indicate a “conductive layer” and may not be limited to a metal material. In addition, shielding metal patterns to which a power supply voltage or a ground voltage is applied may be provided at both sides of a metal pattern on which a sensing node is implemented, and accordingly, coupling by an adjacent sensing node may be prevented. Therefore, in a read operation on the memory device 10, a voltage variation of a sensing node may be reduced, and thus, the read reliability of the memory device 10 may be improved.
Referring to
In an example embodiment, the memory cell array 100 of
In an example embodiment, the second semiconductor layer L2 may include a substrate, and the peripheral circuit 200 may be formed in the second semiconductor layer L2 by forming transistors and metal patterns (e.g., first to third metal layers LM0, LM2, and LM3 of
Along with the development of a semiconductor process, an increased number of tiers of memory cells may be provided in the memory cell array 100. In other words, the greater the number of stacks of word lines WL, the less an area of the memory cell array 100, and accordingly, the less an area of the peripheral circuit 200. According to the example embodiment, to decrease an area of a region occupied by the page buffer circuit 210, the page buffer circuit 210 may have a structure in which a page buffer unit is separated from a cache latch, and sensing nodes respectively included in page buffer units may be commonly connected to a combined sensing node. This will be described in detail with reference to
Referring to
Referring to
A plurality of insulating films IL extending in the second horizontal direction HD2 are sequentially provided on a region of the substrate SUB between two adjacent common source lines CSL in the vertical direction VD, and the plurality of insulating films IL are separated by a particular distance in the vertical direction VD. For example, the plurality of insulating films IL may include an insulating material such as silicon oxide.
On the region of the substrate SUB between the two adjacent common source lines CSL, a plurality of pillars P sequentially provided in the first horizontal direction HD1 and passing through the plurality of insulating films IL in the vertical direction VD are provided. For example, the plurality of pillars P may come in contact with the substrate SUB by passing through the plurality of insulating films IL. Particularly, a surface layer S of each pillar P may include a silicon material having a first type and function as a channel region. An inner layer I of each pillar P may include an insulating material, such as silicon oxide, or an air gap.
On the region between the two adjacent common source lines CSL, a charge storage layer CS is provided along exposed surfaces of the plurality of insulating films IL, the plurality of pillars P, and the substrate SUB The charge storage layer CS may include a gate insulating layer (or a tunneling insulating layer), a charge trap layer, and a blocking insulating layer. For example, the charge storage layer CS may have an oxide-nitride-oxide (ONO) structure. In addition, on the region between the two adjacent common source lines CSL, a gate electrode GE including select lines GSL and SSL and word lines WL0 to WL7 is provided on an exposed surface of the charge storage layer CS. According to an example embodiment, a string select transistor SST is provided corresponding the string select lines SSL, and a ground select transistor GST is provided corresponding the ground select lines GSL.
Each of drains or drain contacts DR is provided on the plurality of pillars P. For example, the drains or drain contacts DR may include a silicon material doped with impurities having a second conductive type. Bit lines BL0 to BL2 extending in the first horizontal direction HD1 and separated by a particular distance in the second horizontal direction HD2 are provided on the drains DR.
Referring to
The page buffer unit PBU may include a main unit MU. The main unit MU may include major transistors in the page buffer PB. The page buffer unit PBU may further include a bit line select transistor TR_hv connected to a bit line BL and driven by a bit line select signal BLSLT. The bit line select transistor TR_hv may be implemented by a high voltage transistor, and accordingly, the bit line select transistor TR_hv may be provided in a well region, i.e., a high voltage unit HVU, different from the main unit MU.
The main unit MU may include a sensing latch (S-LATCH) SL, a force latch (F-LATCH) FL, an upper bit latch or a most significant bit latch (M-LATCH) ML, and a lower bit latch or a least significant bit latch (L-LATCH) LL. According to an example embodiment, the S-LATCH SL, the F-LATCH FL, the M-LATCH ML, or the L-LATCH LL may be referred to as a “main latch”. The main unit MU may further include a precharge circuit PC capable of controlling a precharge operation of the bit line BL or a sensing node SO based on a bit line clamping control signal BLCLAMP, and a transistor PM′ driven by a bit line setup signal BLSETUP.
The S-LATCH SL may store data stored in a memory cell or a sensing result of a threshold voltage of the memory cell in a read or program verify operation. In addition, the S-LATCH SL may be used to apply a program bit line voltage or a program inhibit voltage to the bit line BL in a program operation. The F-LATCH FL may be used to improve a threshold voltage distribution in a program operation. The M-LATCH ML and the L-LATCH LL of the page buffer unit PBU, and the C-LATCH CL of the cache unit CU may be used to store data input from the outside in a program operation and may be referred to as a “data latch”. When 3-bit data is programmed on one memory cell, the 3-bit data may be stored in the M-LATCH ML, the L-LATCH LL, and the C-LATCH CL, respectively. For example, 1-bit from the 3-bit data may be stored in each of the M-LATCH ML, the L-LATCH LL, and the C-LATCH CL, respectively. In addition, in a read operation, the C-LATCH CL may receive, from the S-LATCH SL, data read from a memory cell and output the data to the outside through a data input-output line.
In addition, the main unit MU may further include first to fourth transistors NM1 to NM4. The first transistor NM1 may be connected between the sensing node SO and the S-LATCH SL and may be driven by a ground control signal SOGND. The second transistor NM2 may be connected between the sensing node SO and the F-LATCH FL and may be driven by a forcing monitoring signal MON_F. The third transistor NM3 may be connected between the sensing node SO and the M-LATCH ML and may be driven by a most significant bit monitoring signal MON_M. The fourth transistor NM4 may be connected between the sensing node SO and the L-LATCH LL and may be driven by a least significant bit monitoring signal MON_L.
In addition, the main unit MU may further include fifth and sixth transistors NM5 and NM6 connected in series between the bit line select transistor TR_hv and the sensing node SO. The fifth transistor NM5 may be driven by a bit line shut-off signal BLSHF, and the sixth transistor NM6 may be driven by a bit line connection control signal CLBLK. In addition, the main unit MU may further include a precharge transistor PM. The precharge transistor PM may be connected to the sensing node SO, may be driven by a load signal LOAD, and may precharge the sensing node SO to a precharge level in a precharge duration.
In the example embodiment, the main unit MU may further include a pair of pass transistors, i.e., first and second pass transistors TR and TR′, connected to the sensing node SO. According to an example embodiment, the first and second pass transistors TR and TR′ may be referred to as “first and second sensing node connection transistors”. The first and second pass transistors TR and TR′ may be driven by a pass control signal SO_PASS. According to an example embodiment, the pass control signal SO_PASS may be referred to as a “sensing node connection control signal”. The first pass transistor TR may be connected between a first terminal SOC_U and the sensing node SO, and the second pass transistor TR′ may be connected between the sensing node SO and a second terminal SOC_D.
The page buffer PB may verify whether a memory cell selected from among memory cells included in a NAND string connected to the bit line BL is completely programmed in a program operation. Particularly, in a program verify operation, the page buffer PB may store, in the S-LATCH SL, data sensed through the bit line BL. According to the sensed data stored in the S-LATCH SL, the M-LATCH ML and the L-LATCH LL in which target data is stored are set. For example, when the sensed data indicates program completion, the M-LATCH ML and the L-LATCH LL switch to a program inhibit setting for the selected memory cell in a subsequent program loop. The C-LATCH CL may temporarily store input data provided from the outside. In a program operation, target data stored in the C-LATCH CL may be stored in the M-LATCH ML and the L-LATCH LL.
According to an example embodiment, the first cache unit CU may include a monitor transistor NM7. A source S of the monitor transistor NM7 may be connected to the combined sensing node SOC, and a cache monitoring signal MON_C may be applied to a gate of the monitor transistor NM7. Also, the cache unit CU may include a monitor transistor NM7 and the C-LATCH CL.
Referring
The first page buffer unit PBU0 may include first and second pass transistors TR0 and TR0′ connected in series, and the second page buffer unit PBU1 may include first and second pass transistors TR1 and TR1′ connected in series. A pass control signal SO_PASS [7:0] may be applied to gates of the first and second pass transistors TR0, TR0′, TR1, and TR1′. According to the example embodiment, when the pass control signal SO_PASS[7:0] is activated, first and second pass transistors TR0 to TR7 and TR0′ to TR7′ may be turned on, and accordingly, the first and second pass transistors TR0 to TR7 and TR0′ to TR7′ respectively included in the first to eighth page buffer units PBU0 to PBU7 may be connected in series to each other, and all of first to eighth sensing nodes SO0 to SO7 may be connected to a combined sensing node SOC.
The first to eighth page buffer units PBU0 to PBU7 may further include precharge transistors PM0 to PM7, respectively. In the first page buffer unit PBU0, the precharge transistor PM0 may be connected between the first sensing node SO0 and a voltage terminal to which a precharge level is applied, and may have a gate to which the load signal LOAD is applied. The precharge transistor PM0 may precharge the first sensing node SO0 to the precharge level in response to the load signal LOAD.
The first cache unit CU0 may include a monitor transistor NM7a, and for example, the monitor transistor NM7a may correspond to the transistor NM7 of
The page buffer circuit 210a may further include a precharge circuit SOC_PRE between the eighth page buffer unit PBU7 and the first cache unit CU0. The precharge circuit SOC_PRE may include a precharge transistor PMa for precharging the combined sensing node SOC, and a shielding transistor NMa. The precharge transistor PMa may be driven by a combined sensing node load signal SOC_LOAD, and when the precharge transistor PMa is turned on, the combined sensing node SOC may be precharged to the precharge level. The shielding transistor NMa may be driven by a combined sensing node shielding signal SOC_SHLD, and when the shielding transistor NMa is turned on, the combined sensing node SOC may be discharged to a ground level.
In a structure in which the first to eighth page buffer units PBU0 to PBU7 are separated from the first to eighth cache units CU0 to CU7, if eight signal lines are provided to respectively connect the first to eighth page buffer units PBU0 to PBU7 to the first to eighth cache units CU0 to CU7, a size of the page buffer circuit 210a in the second horizontal direction HD2 may increase. However, according to the example embodiment, the first to eighth sensing nodes SO0 to SO7 may be connected to each other by using the first and second pass transistors TR0 to TR7 and TR0′ to TR7′ respectively included in the first to eighth page buffer units PBU0 to PBU7, and the first to eighth sensing nodes SO0 to SO7 may be connected to the first to eighth cache units CU0 to CU7 through the combined sensing node SOC. By doing this, an increase in the size of the page buffer circuit 210a in the second horizontal direction HD2 may be prevented.
Referring to
The first inverter INV1 may be connected between a first node ND1 and a second node ND2, the second inverter INV2 may be connected between the second node ND2 and the first node ND1, and the first and second inverters INV1 and INV2 may form a latch. The transistor 131 has a gate connected to the combined sensing node SOC. The dump transistor 132 may be driven by a dump signal Dump_C and may transfer data stored in the C-LATCH CL to a main latch (i.e., one of the S-LATCH SL, the F-LATCH FL, the M-LATCH ML, or the L-LATCH LL) in a page buffer unit PBU. The transistor 133 may be driven by a data signal DI, the transistor 134 may be driven by an inverted data signal nDI, and the transistor 135 may be driven by a write control signal DIO_W. When the write control signal DIO_W is activated, voltage levels of the first and second nodes ND1 and ND2 may be determined according to the data signal DI and the inverted data signal nDI.
The cache unit CU may be connected to an input-output terminal RDi through transistors 136 and 137. The transistor 136 has a gate connected to the second node ND2 and may be turned on or off according to a voltage level of the second node ND2. The transistor 137 may be driven by a read control signal DIO_R. When the read control signal DIO_R is activated so that the transistor 137 is turned on, a voltage level of the input-output terminal RDi may be determined to be ‘1’ or ‘0’ according to a state of the C-LATCH CL.
Referring to
Referring to
The page buffer decoder 250 may be adjacent to the page buffer circuit 210 in the first horizontal direction HD1 and may include first to fourth page buffer decoders PBDECa to PBDECd provided in the second horizontal direction HD2. The first to fourth page buffer decoders PBDECa to PBDECd may be connected to the first to fourth page buffer circuits PGBUFa to PGBUFd, respectively. For example, the first page buffer decoder PBDECa may generate a decoder output signal corresponding to the number of fail bits from a page buffer signal received from the first page buffer circuit PGBUFa. For example, when the page buffer signal is logic low, a program for the corresponding memory cell may be determined as being failed and data programmed to the corresponding memory cell may be determined as a fail bit.
Referring to
Referring to
The first metal layer LM0, the second metal layer LM1, and the third metal layer LM2 may be provided above the page buffer circuit 20 in the vertical direction VD. For example, the first and third metal layers LM0 and LM2 may extend in the first horizontal direction HD1, and the second metal layer LM1 may extend in the second horizontal direction HD2. The first metal layer LM0 may include first metal patterns LM0a and LM0b, the second metal layer LM1 may include second metal patterns LM1a and LM1b, and the third metal layer LM2 may include third metal patterns LM2a and LM2b. For example, a pitch of the first metal patterns LM0a and LM0b may be less than a pitch of the third metal patterns LM2a and LM2b. For example, a thickness of the first metal patterns LM0a and LM0b in the vertical direction VD may be less than a thickness of the third metal patterns LM2a and LM2b in the vertical direction VD. According to an example embodiment, a “first metal layer” may be referred to as a “lower metal layer”, a “third metal layer” may be referred to as an “upper metal layer”, “first metal patterns” may be referred to as “lower metal patterns”, and “third metal patterns” may be referred to as “upper metal patterns”.
The first to third metal patterns LM0a, LM1a, and LM2a above the first page buffer unit PBU0a may be connected to each other, and accordingly, the first sensing node SO0 may be implemented. For example, the first metal pattern LM0a may be connected to the drain D0a of the transistor TRa through a contact CT0a, the second metal pattern LM1a may be connected to the first metal pattern LM0a through a contact CT1a, and the third metal pattern LM2a may be connected to the second metal pattern LM1a through a contact CT2a. In this case, the third metal pattern LM2a may be referred to as the first sensing node SO0 or a first sensing plus node SO0+. As described above, by using a plurality of metal layers to implement the first sensing node SO0, a total capacitance of the first sensing node SO0 may increase to have a sufficiently large value in a relationship with a sensing current so as to be robust to a change in a sensing condition. Therefore, in a read operation, a voltage variation of the first sensing node SO0 may decrease, and read reliability of the first sensing node SO0 may be improved.
The first to third metal patterns LM0b, LM1b, and LM2b above the second page buffer unit PBU0b may be connected to each other, and accordingly, the second sensing node SO1 may be implemented. For example, the first metal pattern LM0b may be connected to the drain D0b of the transistor TRb through a contact CT0b, the second metal pattern LM1b may be connected to the first metal pattern LM0b through a contact CT1b, and the third metal pattern LM2b may be connected to the second metal pattern LM1b through a contact CT2b. In this case, the third metal pattern LM2b may be referred to as the second sensing node SO1 or a second sensing plus node SO1+. As described above, by using a plurality of metal layers to implement the second sensing node SO1, a total capacitance of the second sensing node SO1 may increase to have a sufficiently large value in a relationship with a sensing current so as to be robust to a change in a sensing condition. Therefore, in a read operation, a voltage variation of the second sensing node SO1 may decrease, and read reliability of the second sensing node SO1 may be improved.
In an example embodiment, the third metal patterns LM2a and LM2b may not be adjacent in the second horizontal direction HD2. For example, the third metal patterns LM2a and LM2b may be separated by a first distance, that is, a first spacing SP in the first horizontal direction HD1. Accordingly, because coupling between the third metal patterns LM2a and LM2b may decrease, the voltage variation of the second sensing node SO1 may not affect a voltage of the first sensing node SO0, and accordingly, the read reliability of a memory device may be improved.
In an example embodiment, the first metal layer LM0 may further include first metal patterns LM0c, LM0d, and LM0e between the first metal patterns LM0a and LM0b. Each of the first metal patterns LM0c, LM0d, and LM0e may include a plurality of patterns separated from each other, and for example, the plurality of patterns may be connected to a plurality of transistors. For example, an internal power supply voltage or a ground voltage may be applied to the first metal pattern LM0c, and accordingly, the first metal pattern LM0a corresponding to the first sensing node SO0 may be shielded. In the example embodiment, a metal pattern to which the internal power supply voltage or the ground voltage is applied may be referred to as a “power supply pattern”. In addition, for example, the internal power supply voltage or the ground voltage may be applied to the first metal pattern LM0e, and accordingly, the first metal pattern LM0b corresponding to the second sensing node SO1 may be shielded. As described above, according to the example embodiment, a voltage variation of each of the first and second sensing nodes SO0 and SO1 may be minimized by respectively disposing the first metal patterns LM0c and LM0e having a fixed bias voltage at one sides of the first metal patterns LM0a and LM0b respectively corresponding to the first and second sensing nodes SO0 and SO1.
According to a micro-process, an area of a region occupied by the page buffer circuit 20 is based on a transistor width WD. For example, the smaller a transistor width WD, the smaller an area of a region occupied by the page buffer circuit 20. For example, the transistor width WD may correspond to a size of the gate G0a of the transistor TRa in the second horizontal direction HD2. Particularly, the smaller the transistor width WD, the smaller a size of the first page buffer unit PBU0a in the second horizontal direction HD2. However, regardless of a decrease in the transistor width WD, a pitch of the first metal layer LM0 may not decrease. Accordingly, the number of wirings of the first metal layer LM0, i.e., the number of metal patterns, above the first page buffer unit PBU0a having a reduced size in the second horizontal direction HD2 may also decrease. For example, metal patterns of the first metal layer LM0 corresponding to the first page buffer unit PBU0a may be reduced from 6 to 4.
When the number of metal patterns of the first metal layer LM0 corresponding to the first page buffer unit PBU0a is reduced, the sensing reliability of the first page buffer unit PBU0a may decrease. For example, in a sensing operation, to prevent coupling between the first sensing node SO0 and an adjacent node, a metal pattern adjacent to the first sensing node SO0 may be used as a shielding line to which a fixed bias voltage is applied. However, when the metal pattern corresponding to the shielding line is removed due to the decrease in the metal patterns, a voltage variation of the first sensing node SO0 may increase due to coupling between the first sensing node SO0 and an adjacent node, and accordingly, the sensing reliability of the first page buffer unit PBU0a may decrease.
However, according to the example embodiment, by using a page buffer unit-cache unit separation structure, a degree of freedom of metal patterns included in the third metal layer LM2 above the first page buffer unit PBU0a may increase so that one of the metal patterns included in the third metal layer LM2 is used as the first sensing plus node SO0+. An increase in the voltage variation of the first sensing node SO0 may be prevented by connecting the first sensing node SO0 to the first sensing plus node SO0+, and accordingly, a decrease in the sensing reliability of the first page buffer unit PBU0a may be prevented.
Referring to
Referring to
The third metal layer LM2 may include metal patterns 311 to 318 and 321 to 328 extending in the first horizontal direction HD1 and may be provided above the page buffer circuit 210 and the page buffer decoder 250 in the vertical direction VD. For example, the third metal layer LM2 may correspond to the third metal layer LM2 of
The metal patterns 312, 313, 317, and 318 may be provided above the cache region CR and the page buffer decoder 250 by crossing the same. The metal patterns 312, 313, 317, and 318 may be electrically connected to the cache units CU0a to CU0d and the page buffer decoder 250 through contacts CT. The metal patterns 321 to 328 may be provided above the main region MR by crossing the same.
As described above with reference to
According to the page buffer unit-cache unit separation structure, a degree of wiring freedom of the third metal layer LM2 above the main region MR in which the page buffer units PBU0a to PBU0d are provided may increase. Accordingly, some metal patterns 321 to 324 of the third metal layer LM2 above the main region MR may be used as the first to fourth sensing nodes SO0 to SO3 of the page buffer units PBU0a to PBU0d, respectively. Particularly, the first to fourth sensing nodes SO0 to SO3 may be implemented by metal patterns included in the first metal layer LM0, the metal patterns included in the first metal layer LM0 may be electrically connected to the metal patterns 321 to 324 included in the third metal layer LM2, respectively, and accordingly, a capacitance of each of the first to fourth sensing nodes SO0 to SO3 may increase.
Referring to
The third metal layer LM2 may include metal patterns 311 to 318, 321 to 328, and 331 to 334 extending in the first horizontal direction HD1. The metal patterns 311, 314, and 316 may be provided above the main region MR, the cache region CR, and the page buffer decoder 250 by crossing the same, and the metal pattern 315 may be provided above the main region MR and the cache region CR by crossing the same. For example, a first page buffer driver signal PBDRV may be applied to the metal pattern 315, and the metal pattern 315 may be connected to the column driver. The metal patterns 331 to 334 may be provided above the high voltage region HV of the page buffer circuit 210 in the vertical direction VD. For example, the metal patterns 331 to 334 may correspond to first to fourth nodes SOC_U0 to SOC_U3, respectively. For example, one of the first to fourth nodes SOC_U0 to SOC_U3 may correspond to the first terminal SOC_U of
Referring to
The metal patterns 321a to 324a may be provided above the low voltage region LV in the vertical direction VD and may correspond to, for example, the first to fourth sensing nodes SO0 to SO3, respectively. The metal patterns 321a and 322a may be provided in a line in the first horizontal direction HD1, and the metal patterns 323a and 324a may be provided in a line in the first horizontal direction HD1. The metal pattern 326a may be provided above the main region MR in the vertical direction VD, and for example, the ground voltage GND may be applied to the metal pattern 326a. The metal pattern 335 may be provided above the main region MR in the vertical direction VD, for example, the first page buffer driver signal PBDRV may be applied to the metal pattern 335, and the metal pattern 335 may be connected to a first column driver. The metal pattern 316a may be provided above the cache region CR and the page buffer decoder 250 in the vertical direction VD, for example, a second page buffer driver signal PBDRVa may be applied to the metal pattern 316a, and the metal pattern 316a may be connected to a second column driver. The metal patterns 331a and 333a may be provided above the high voltage region HV in the vertical direction VD. For example, the metal pattern 331a may correspond to the first and second nodes SOC_U0 and SOC_U1, and the metal pattern 333a may correspond to the third and fourth nodes SOC_U2 and SOC_U3.
Referring to
Referring to
The lower metal patterns 411a to 418 may be provided above the plurality of active regions 430 in the vertical direction VD and may extend in the first horizontal direction HD1. For example, the lower metal patterns 412, 414, 416, and 418 may correspond to the first to fourth sensing nodes SO0 to SO3, respectively. The upper metal patterns 421 to 429 may be provided above the lower metal layer 410 in the vertical direction VD and may extend in the first horizontal direction HD1. For example, the upper metal patterns 422, 424, 426, and 428 may be connected to the lower metal patterns 412, 414, 416, and 418 through contacts CT, respectively, and accordingly, the upper metal patterns 422, 424, 426, and 428 may correspond to the first to fourth sensing nodes SO0 to SO3, respectively.
For example, the internal power supply voltage or the ground voltage may be applied to the lower metal patterns 411a and 411b at both sides of the lower metal pattern 412 corresponding to the first sensing node SO0, and accordingly, the lower metal patterns 411a and 411b may be used as shielding lines for the lower metal pattern 412. Likewise, the lower metal patterns 413a and 413b may be used as shielding lines for the lower metal pattern 414, the lower metal patterns 415a and 415b may be used as shielding lines for the lower metal pattern 416, and the lower metal patterns 417a and 417b may be used as shielding lines for the lower metal pattern 418. In addition, for example, the internal power supply voltage or the ground voltage may be applied to the upper metal patterns 421, 423, 425, and 427, and accordingly, the upper metal patterns 421, 423, 425, and 427 may be used as shielding lines for the upper metal patterns 422, 424, 426, and 428, respectively.
Referring to
Hereinafter, patterns on a plurality of tracks, e.g., first to sixth tracks, of the third metal layer LM2 will be described. For example, the first internal signal pattern ISa may be provided on the first track, the first and second sensing node patterns SOa and SOb may be provided on the second track, the second internal signal pattern ISb may be provided on the third track, the third internal signal pattern ISc may be provided on the fourth track, the third and fourth sensing node patterns SOc and SOd may be provided on the fifth track, and the fourth internal signal pattern ISd may be provided on the sixth track.
Referring to
Referring to
Referring to
The dynamic latch DL may include transistors NM11, NM12, and NM13. The transistor NM11 may be provided between the sensing node SO and a dynamic node D, the transistor NM12 may be provided between the dynamic node D and a ground terminal, and the transistor NM13 may be provided between the S-LATCH SL and a gate of the transistor NM12. The transistor NM11 may be driven by a monitor signal MON_D, and the transistor NM13 may be driven by a set signal SET_D.
Referring to
Referring to
The metal patterns 611 to 614 may correspond to the first to fourth sensing nodes SO0 to SO3, respectively, and the metal patterns 621 to 624 may correspond to first to fourth dynamic nodes D_0 to D_3, respectively. In this case, the first sensing node SO0 and the first dynamic node D_0 may be connected to transistors included in the first page buffer unit 610, for example, connected to the transistor NM11 of
For example, the metal patterns 611 and 621 may be provided in a line in the first horizontal direction HD1, the metal patterns 612 and 622 may be provided in a line in the first horizontal direction HD1, the metal patterns 613 and 623 may be provided in a line in the first horizontal direction HD1, and the metal patterns 614 and 624 may be provided in a line in the first horizontal direction HD1. The internal power supply voltage IVC may be applied to the metal patterns 631 and 634, and the ground voltage GND may be applied to the metal patterns 632 and 635. The first page buffer driver signal PBDRV may be applied to the metal pattern 633, and the metal pattern 633 may be connected to, for example, a column driver.
Referring to
The metal patterns 611a to 614a may correspond to the first to fourth sensing nodes SO0 to SO3, respectively, and the metal patterns 621a to 624a may correspond to the first to fourth dynamic nodes D_0 to D_3, respectively. For example, the metal patterns 611a, 612a, 621a, and 622a may be provided in a line in the first horizontal direction HD1, and the metal patterns 613a, 614a, 623a, and 624a may be provided in a line in the first horizontal direction HD1. The internal power supply voltage IVC may be applied to the metal patterns 631a and 634a, and the ground voltage GND may be applied to the metal pattern 632a. The first page buffer driver signal PBDRV may be applied to the metal pattern 633a, and the metal pattern 633a may be connected to, for example, a column driver.
Referring to
The metal patterns 611b to 614b may correspond to the first to fourth sensing nodes SO0 to SO3, respectively, and the metal patterns 621b to 624b may correspond to the first to fourth dynamic nodes D_0 to D_3, respectively. For example, the metal patterns 611b and 621b may be provided in a line in the first horizontal direction HD1, the metal patterns 612b and 622b may be provided in a line in the first horizontal direction HD1, the metal patterns 613b and 623b may be provided in a line in the first horizontal direction HD1, and the metal patterns 614b and 624b may be provided in a line in the first horizontal direction HD1. The internal power supply voltage IVC may be applied to the metal patterns 631b and 634b, and the ground voltage GND may be applied to the metal patterns 632b and 635b. The first page buffer driver signal PBDRV may be applied to the metal pattern 633b, and the metal pattern 633b may be connected to, for example, a column driver.
Referring to
The metal patterns 611a to 614a may correspond to the first to fourth sensing nodes SO0 to SO3, respectively, and the metal patterns 621c to 624c may correspond to the first to fourth dynamic nodes D_0 to D_3, respectively. For example, the metal patterns 611a, 612a, 621c, and 622c may be provided in a line in the first horizontal direction HD1, and the metal patterns 613a, 614a, 623c, and 624c may be provided in a line in the first horizontal direction HD1. The internal power supply voltage IVC may be applied to the metal patterns 631a and 634a, and the ground voltage GND may be applied to the metal pattern 632a. The first page buffer driver signal PBDRV may be applied to the metal pattern 633a, and the metal pattern 633a may be connected to, for example, a column driver.
Referring to
Each of the peripheral circuit region PERI and the cell region CELL of the memory device 900 may include an external pad bonding area PA, a word line bonding area WLBA, and a bit line bonding area BLBA. The peripheral circuit region PERI may include a first substrate 710, an interlayer insulating layer 715, a plurality of circuit elements 720a, 720b, and 720c formed on the first substrate 710, first metal layers 730a, 730b, and 730c respectively connected to the plurality of circuit elements 720a, 720b, and 720c, and second metal layers 740a, 740b, and 740c respectively formed on the first metal layers 730a, 730b, and 730c. In an example embodiment, the first metal layers 730a, 730b, and 730c may be formed of tungsten having a relatively high resistance, and the second metal layers 740a, 740b, and 740c may be formed of copper having a relatively low resistance.
According to an example embodiment, although only the first metal layers 730a, 730b, and 730c and the second metal layers 740a, 740b, and 740c are shown and described, the example embodiment is not limited thereto, and one or more metal layers may be further formed on the second metal layers 740a, 740b, and 740c. At least a portion of the one or more metal layers formed on the second metal layers 740a, 740b, and 740c may be formed of aluminum or the like having a lower resistance than that of Cu forming the second metal layers 740a, 740b, and 740c.
The interlayer insulating layer 715 may be provided on the first substrate 710 and cover the plurality of circuit elements 720a, 720b, and 720c, the first metal layers 730a, 730b, and 730c, and the second metal layers 740a, 740b, and 740c and may include an insulating material such as silicon oxide or silicon nitride.
Lower bonding metals 771b and 772b may be formed on the second metal layer 740b in the word line bonding area WLBA. In the word line bonding area WLBA, the lower bonding metals 771b and 772b in the peripheral circuit region PERI may be electrically connected to upper bonding metals 871b and 872b in a bonding manner, and the lower bonding metals 771b and 772b and the upper bonding metals 871b and 872b may be formed of aluminum, copper, tungsten, or the like. The upper bonding metals 871b and 872b in the cell region CELL may be referred as first metal pads, and the lower bonding metals 771b and 772b in the peripheral circuit region PERI may be referred as second metal pads.
The cell region CELL may include at least one memory block. The cell region CELL may include a second substrate 810 and a common source line 820. On the second substrate 810, a plurality of word lines 831 to 838 (i.e., 830) may be stacked in a direction (the vertical direction VD), perpendicular to an upper surface of the second substrate 810. At least one string select line and at least one ground select line may be arranged on and below the plurality of word lines 830, respectively, and the plurality of word lines 830 may be provided between the at least one string select line and the at least one ground select line.
In the bit line bonding area BLBA, a channel structure CH may extend in a direction, perpendicular to the upper surface of the second substrate 810, and pass through the plurality of word lines 830, the at least one string select line, and the at least one ground select line. The channel structure CH may include a data storage layer, a channel layer, a buried insulating layer, and the like, and the channel layer may be electrically connected to a first metal layer 850c and a second metal layer 860c. For example, the first metal layer 850c may be a bit line contact, and the second metal layer 860c may be a bit line. In an example embodiment, the bit line 860c may extend in a first direction (a Y-axis direction), parallel to the upper surface of the second substrate 810.
In an example embodiment illustrated in
In the word line bonding area WLBA, the plurality of word lines 830 may extend in the second horizontal direction HD2, parallel to the upper surface of the second substrate 810, and may be connected to a plurality of cell contact plugs 841 to 847 (i.e., 840). The plurality of word lines 830 and the plurality of cell contact plugs 840 may be connected to each other in pads provided by at least a portion of the plurality of word lines 830 extending in different lengths in the second horizontal direction HD2. A first metal layer 850b and a second metal layer 860b may be connected to an upper portion of the plurality of cell contact plugs 840 connected to the plurality of word lines 830, sequentially. The plurality of cell contact plugs 840 may be connected to the peripheral circuit region PERI through the upper bonding metals 871b and 872b of the cell region CELL and the lower bonding metals 771b and 772b of the peripheral circuit region PERI in the word line bonding area WLBA.
The plurality of cell contact plugs 840 may be electrically connected to the circuit elements 720b providing a row decoder 894 in the peripheral circuit region PERI. In an example embodiment, operating voltages of the circuit elements 720b providing the row decoder 894 may be different from operating voltages of the circuit elements 720c providing the page buffer 893. For example, the operating voltages of the circuit elements 720c providing the page buffer 893 may be greater than the operating voltages of the circuit elements 720b providing the row decoder 894.
A common source line contact plug 880 may be provided in the external pad bonding area PA. The common source line contact plug 880 may be formed of a conductive material such as a metal, a metal compound, or polysilicon, and may be electrically connected to the common source line 820. A first metal layer 850a and a second metal layer 860a may be stacked on an upper portion of the common source line contact plug 880, sequentially. For example, an area in which the common source line contact plug 880, the first metal layer 850a, and the second metal layer 860a are provided may be defined as the external pad bonding area PA.
Input-output pads 705 and 805 may be provided in the external pad bonding area PA. Referring to
Referring to
According to embodiments, the second substrate 810 and the common source line 820 may not be provided in an area in which the second input-output contact plug 803 is provided. Also, the second input-output pad 805 may not overlap the word lines 830 in the vertical direction VD. Referring to
According to embodiments, the first input-output pad 705 and the second input-output pad 805 may be selectively formed. For example, the memory device 900 may include only the first input-output pad 705 provided on the first substrate 710 or the second input-output pad 805 provided on the second substrate 810. Alternatively, the memory device 900 may include both the first input-output pad 705 and the second input-output pad 805.
A metal pattern in an uppermost metal layer may be provided as a dummy pattern or the uppermost metal layer may be absent, in each of the external pad bonding area PA and the bit line bonding area BLBA, respectively included in the cell region CELL and the peripheral circuit region PERI.
In the external pad bonding area PA, the memory device 900 may include a lower metal pattern 773a, corresponding to an upper metal pattern 872a formed in an uppermost metal layer of the cell region CELL, and having the same shape as the upper metal pattern 872a of the cell region CELL, in an uppermost metal layer of the peripheral circuit region PERI. In the peripheral circuit region PERI, the lower metal pattern 773a formed in the uppermost metal layer of the peripheral circuit region PERI may not be connected to a contact. Similarly, in the external pad bonding area PA, an upper metal pattern, corresponding to the lower metal pattern formed in an uppermost metal layer of the peripheral circuit region PERI, and having the same shape as a lower metal pattern of the peripheral circuit region PERI, may be formed in an uppermost metal layer of the cell region CELL.
The lower bonding metals 771b and 772b may be formed on the second metal layer 740b in the word line bonding area WLBA. In the word line bonding area WLBA, the lower bonding metals 771b and 772b of the peripheral circuit region PERI may be electrically connected to the upper bonding metals 871b and 872b of the cell region CELL by a Cu—Cu bonding manner.
Further, in the bit line bonding area BLBA, an upper metal pattern 892, corresponding to a lower metal pattern 752 formed in the uppermost metal layer of the peripheral circuit region PERI, and having the same shape as the lower metal pattern 752 of the peripheral circuit region PERI, may be formed in an uppermost metal layer of the cell region CELL. A contact may not be formed on the upper metal pattern 892 formed in the uppermost metal layer of the cell region CELL.
Referring to
While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
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