Parallel bit test device and method using error correcting code

Information

  • Patent Application
  • 20080082870
  • Publication Number
    20080082870
  • Date Filed
    September 20, 2007
    17 years ago
  • Date Published
    April 03, 2008
    16 years ago
Abstract
Example embodiments are directed to a parallel bit test device and method using error correcting code. The parallel bit test device may include an error detecting and correcting unit configured to count the number of fail bits in an m-bit data signal, for example, by comparing bits of the m-bit data signal with corresponding bits of expected data, where m is a positive integer, and to output correction signals. The error detecting and correcting unit may be further configured to perform at least one logic operation on a correction control signal and comparison signals. The correction control signal may be generated in response to a test mode register set (TMRS) signal set and input by a user such that the logic level of the correction control signal may vary according to the counted number of fail bits. Each comparison signal may include information about a fail bit and the address of the fail bit.
Description

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of example embodiments will become more apparent by describing in detail example embodiments with reference to the attached drawings. The accompanying drawings are intended to depict example embodiments and should not be interpreted to limit the intended scope of the claims. The accompanying drawings are not to be considered as drawn to scale unless explicitly noted.



FIG. 1 is a block diagram of a conventional parallel bit test device using an Error Correcting Code (ECC).



FIG. 2 illustrates flows of signals input/output to/from the parity generator and error detector of FIG. 1.



FIG. 3A is a circuit diagram of a conventional parallel bit test device for detecting the generation of a fail bit.



FIG. 3B is a timing diagram of signals used to drive the conventional parallel bit test device of FIG. 3A.



FIG. 4 illustrates example bit lines used in a parallel bit test device according to an example embodiment.



FIG. 5 is a block diagram of a parallel bit test device according to an example embodiment.



FIG. 6 is a block diagram of the example fail bit controller of FIG. 5.





DESCRIPTION OF EXAMPLE EMBODIMENTS

Detailed example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. Example embodiments may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.


Accordingly, while example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but to the contrary, example embodiments are to cover all modifications, equivalents, and alternatives failing within the scope of example embodiments. Like numbers refer to like elements throughout the description of the figures.


It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.


It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between”, “adjacent” versus “directly adjacent”, etc.).


The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising,”, “includes” and/or “including”, when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.


It should also be noted that in some alternative implementations, the functions/acts noted may occur out of the order noted in the figures. For example, two figures shown in succession may in fact be executed substantially concurrently or may sometimes be executed in the reverse order, depending upon the functionality/acts involved.



FIG. 4 illustrates bit lines BL1, BL2, BL3 and BL4 used in a parallel bit test device according to an example embodiment. Referring to FIG. 4, the parallel bit test device may compress data loaded on four bit lines BL1, BL2, BL3 and BL4 into a single transfer data signal DQi. In a semiconductor memory device including the parallel bit test device according to an example embodiment, a single column select signal CSL may be used to input the four bit lines BL1, BL2, BL3 and BL4. For example, when the column select signal CSL is at a logic high level, the four bit lines BL1, BL2, BL3 and BL4 may be simultaneously activated.


While the data of the four bit lines may be illustrated as included in a single transfer data signal in FIG. 4, it will be understood by those of ordinary skill in the art that the number of bit lines is not limited to four.



FIG. 5 is a block diagram of a parallel bit test device according to an example embodiment. Referring to FIG. 5, the parallel bit test device may include a plurality of data input units 510, a plurality of error detecting and correcting units 530, and/or a plurality of output units 580.


Each data input unit 510 may receive an m-bit data signal including n data bits and (m-n) parity bits, where m and n are positive integers, and n is not greater than m. The m-bit data signal may be compressed by k bits to form m/k compressed data signals DQ, where k is a positive integer not greater than m. For example, as shown in FIG. 5, n may be 8, m may be 12 and k may be 4. Following this example, Hamming code (12, 8) may be input to the data input unit 510 and compressed into a single data signal DQ including four bits (k=4). Accordingly, as shown, a first Hamming code (data received through bit lines BL0 through BL11) may be input and compressed into data signals DQ0, DQ1 and DQ2, and a second Hamming code (data received through bit lines BL12 through BL23) may be input and compressed into data signals DQ3, DQ4 and DQ5.


Each data input unit 510 may compress 12-bit data (a single Hamming code) into three compressed data signals DQ, and output the three compressed data signals DQ to a corresponding error detecting and correcting unit 530.


Each error detecting and correcting unit 530 may include a transfer data comparator 531, a fail bit controller 551, a comparison signal generator 561, and/or a fail bit detecting and correcting unit 571. The error detecting and correcting unit 530 may count the number of fail bits using ECC and detect the addresses of fail bits. An error correcting range may be controlled by a user by setting a test mode register set (test MRS or TMRS) signal and inputting the test MRS signal to the parallel bit test device. To correct, for example, 1-bit error for a data signal input as a 12-bit Hamming code, the test MRS signal may be set such that a correction control signal D_CON may be output to the parallel bit test device when one fail bit or less is generated. The activation level of the correction control signal D_CON may be set to logic high or logic low. For example, in the example embodiment illustrated in FIG. 5, the activation level of the correction control signal D_CON may be a logic high level.


Each transfer data comparator 531 may respectively compare input data bits CD0 through CD11 to expected data bits ED0 through ED11, and output error comparison signals ECO_i having information indicating whether the input data bits CD0 through CD11 are the same as the expected data bits ED0 through ED11. The data bits CDi may correspond to a signal loaded and transferred on bit lines BLi, and the expected data bits EDi may correspond to the initially input data bits (the data bits prior to being transferred through bit lines). For example, if data 1101 is input to a Memory Chip and is read as 1100 at a receiving side of PBT device (Parallel Bit Test device), 1100 may correspond to the data bits CDi and 1101 may correspond to the expected data bits EDi.


The data bits CDi may be checked against the expected data bits EDi using XOR gates. For example, the transfer data comparator 531 may include m XOR gates when an m-bit data signal is input. An XOR gate may output 0 when signals input thereto are the same as each other and output 1 when the input signals are different from each other. Thus, it may be determined whether the data bits CDi are the same as the expected data bits EDi using XOR gates.


It may be determined that the data bits CDi are the same as the expected data bits EDi when all the error comparison signals ECOi have a value 0, or that the data bits CDi do not correspond to the expected data bits EDi when any of the error comparison signals ECOi has a value 1. If the data bits CDi do not have any fail bits, the data bits CDi may match the expected data bits EDi.


The fail bit controller 551 may count the number of error comparison signals ECOi having a value 1 and determine whether the correction control signal D_CON may be output at a logic high level in response to the test MRS signal applied thereto.



FIG. 6 is a block diagram of the fail bit controller illustrated in FIG. 5. Referring to FIG. 6, the fail bit controller 551 may include an adder 610 and/or a fail estimator 620. The adder 610 may receive, for example, twelve error comparison signals ECOi, count the number of error comparison signals ECOi having a value 1, and output a 4-bit data signal. When each of the twelve error comparison signals ECOi has a value 1, the adder 610 may output 1100, for example. The error comparison signals ECOi may be output as 1 when data bits corresponding thereto are fail bits. Accordingly, when the number of error comparison signals ECOi is counted, the number of fail bits may be known.


The fail estimator 620 may receive the 4-bit data signal output from the adder 610 and output the correction control signal D_CON in response to the test MRS signal TMRS. As described above, the test MRS signal TMRS may be set and input by a user such that the correction control signal D_CON is output when the counted number of fail bits is less than a given number. For example, the test MRS signal TMRS may be used to set a threshold of the counted number of fail bits needed to output the correction control signal D_CON.


For example, if the user wants to correct fail bits when the number of fail bits is 2 or less, the test MRS signal TMRS may be set such that the correction control signal D_CON at a logic high level is output when the counted value is 2 or less (for example, when the counted number is 0010, 0001 or 0000).


The fail bit detecting and correcting unit 571, which will be described later, may include OR gates such that fail bits may be corrected when the correction control signal D_CON at a logic high level is applied thereto.


The case where the test MRS signal TMSR is set such that fail bit correction is carried out when the number of fail bits is 1 or less will be explained below.


Referring back to FIG. 5, the comparison signal generator 561 may determine whether a given number of error comparison signals ECOi have the same value, and output comparison signals SCOi having information representing whether the error comparison signals have the same value. For example, as shown in FIG. 5, the comparison signals SCOi may contain information representing whether four error comparison signals ECOi have the same value. When the error comparison signals ECOi are represented as X and the comparison signals SCOi are represented as Y, a matrix [A] satisfying the relationship of [A][X]=[Y] may be used. The matrix [A] may be set by a user through various methods. The address of a fail bit CDi may be detected by analyzing [Y]. There are various methods of analyzing the address and these methods are well known in the art.


The comparison signal generator 561 may include m/k XNOR gates. For example, because m=12 and k=4 in the example embodiment of FIG. 5, as described above, the comparison signal generator 561 may include three XNOR gates 563. When the error comparison signals ECO_0, ECO_1, ECO_2 and ECO_3 are respectively 0, 0, 1 and 0, for example, an XNOR gate 563 receiving the error comparison signals ECO_0, ECO_1, ECO_2 and ECO_3 may output 0.


Each fail bit detecting and correcting unit 571 may include m/k OR gates 573, 575 and 577 and perform OR operations on the error correction signal D_CON and the comparison signals SCO_i to generate correction signals COLi. For example, when the data bit CD5 transferred through the bit line BL5 is a fail bit and the other data bits CD0 through CD4 and CD6 through CD11 do not have errors, D_CON1 may be 1, SCO_0 may be 1, SCO_1 may be 0 and SCO_2 may be 1. When the test MRS signal TMRS is set such that fail bit correction may be carried out when the number of fail bits is one or less, each of the three OR gates 573, 575 and 577 may output 1.


Each output unit 580 may correct a fail bit and output the corrected bit when the correction signals COLi at a logic high level are input thereto. Each output unit 580 may output the compressed data DQi when the correction signals COLi at a logic high level are input thereto and the output value of the adder 610 is 0.


Because the parallel bit test device may detect a fail bit but may not correct the fail bit, the output unit 580 may be located outside the parallel bit test device. However, the output unit 580 may be included in the parallel bit test device together with the error detecting and correcting unit 530.


A fail bit may be corrected such that the address of the fail bit is detected using the comparison signals SCO_i and the error comparison signals ECO_i, and the fail bit may be inverted (for example, because when the fail bit is 0 the original data bit may be 1 in the binary system). For example, the compressed data DQi having a fail bit may be detected using the comparison signals SCO_i and replaced with corrected compressed data.


The logic levels of the correction signals COLi may vary according to the logic devices included in the fail bit detecting and correcting unit 571. For example, if the fail bit detecting and correcting unit 571 uses NOR gates, instead of OR gates 573, the correction signals COLi may have a logic low level.


When the correction signals COLi are applied at a logic level that does not activate correction, the compressed data DQi may not be outputted. For example, data may not be transmitted because a fail bit generated in the data may not be corrected. The parallel bit test device according to an example embodiment may not correct a fail bit and may not output the compressed data DQi when the correction signals COLi at a logic low level are applied thereto.


As described above, a parallel bit test device according to example embodiments may include an adder and may set a test MRS signal according to a fail condition set by a user to detect a number of fail bits. Furthermore, the parallel bit test device may detect the position of a fail bit.


Example embodiments having thus been described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the intended spirit and scope of example embodiments, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

Claims
  • 1. A parallel bit test device, comprising: an error detecting and correcting unit configured to count a number of fail bits in an m-bit data signal, where m is a positive integer, and to output correction signals.
  • 2. The parallel bit test device of claim 1, wherein the error detecting and correcting unit is configured to count the number of fail bits in the m-bit data signal by comparing the bits of the m-bit data signal with corresponding bits of expected data to determine whether the bits of the m-bit data signal are the same as the bits of the expected data, the m-bit data signal including n data bits and (m-n) parity bits, where n is a positive integer less not greater than m.
  • 3. The parallel bit test device of claim 2, wherein the error detecting and correcting unit is further configured to perform at least one logic operation on a correction control signal and comparison signals, the correction control signal being generated in response to a test mode register set (TMRS) signal set and input by a user such that the logic level of the correction control signal varies according to the counted number of fail bits, and each comparison signal including information about a fail bit and the address of the fail bit.
  • 4. The parallel bit test device of claim 3, further comprising: a data input unit configured to receive and output the m-bit data signal.
  • 5. The parallel bit test device of claim 4, wherein the error detecting and correcting unit includes a fail bit controller, the fail bit controller comprising: an adder configured to add up the number of fail bits using error comparison signals including information about whether the bits of the m-bit data signals are the same as the corresponding bits of the expected data; anda fail estimator configured to output the correction control signal at a logic level which varies according to the number of fail bits, in response to the test MRS signal.
  • 6. The parallel bit test device of claim 5, wherein the data input unit is configured to output m/k compressed data signals, where k is a positive integer not greater than m, obtained by grouping the m-bit data signal into groups each having k bits to the error detecting and correcting unit.
  • 7. The parallel bit test device of claim 6, wherein the error detecting and correcting unit further comprises: a transfer data comparator configured to compare the bits of the m-bit data signal to the corresponding bits of the expected data and to output the error comparison signals;comparison signal generator configured to determine whether any of k error comparison signals have the same value and to output the comparison signals, the comparison signals including information about whether any of the k error comparison signals have the same value; anda fail bit detecting and correcting unit configured to generate the correction signals by performing the at least one logic operation on the correction control signal and the comparison signals.
  • 8. The parallel bit test device of claim 7, wherein the test MRS signal is set and input by a user such that the correction control signal is outputted only when the counted number of fail bits is 1 or less.
  • 9. The parallel bit test device of claim 7, wherein the transfer data comparator includes m XOR gates each respectively receiving a bit of the m-bit data signal and the corresponding bit of the expected data, and performing exclusive OR operations on the bits of the m-bit data and the corresponding bits of the expected data to output the error comparison signals.
  • 10. The parallel bit test device of claim 9, wherein the comparison signal generator includes m/k XNOR gates receiving and performing XNOR operations on the error comparison signals to output the m/k comparison signals.
  • 11. The parallel bit test device of claim 10, wherein the fail bit detecting and correcting unit includes m/k OR gates respectively receiving and performing OR operations on the correction control signal and a comparison signal to generate the correction signals.
  • 12. The parallel bit test device of claim 11, wherein the correction control signal has a logic high level when the number of fail bits is 1 or less, and has a logic low level when the number of fail bits is 2 or greater.
  • 13. The parallel bit test device of claim 7, further comprising: an output unit configured to select and output the original data signal or a corrected data signal according to the correction signals.
  • 14. The parallel bit test device of claim 13, wherein the output unit is configured to output error-corrected compressed data or the original compressed data when the correction signals have a logic high level, and to not output compressed data when the correction signals have a logic low level.
  • 15. The parallel bit test device of claim 14, wherein the output unit is configured to output the original compressed data when the correction signals have a logic high level and the number of fail bits is 0, and to correct the fail bit and output the corrected compressed data when the correction signals have a logic high level and the number of fail bits is 1.
  • 16. The parallel bit test device of claim 15, wherein the output unit is configured to correct the fail bit by replacing bit lines corresponding to the compressed data having the fail bit with redundancy bit lines.
  • 17. The parallel bit test device of claim 6, wherein m is 12 and n is 4.
  • 18. The parallel bit test device of claim 17, wherein k is 4.
  • 19. The parallel bit test device of claim 6, wherein the parallel bit test device includes L data input units, L error detecting and correcting units and L output units when L m-bit data signals are input to the parallel bit test device, where L is a positive integer.
  • 20. A method of error detecting and correcting in a parallel bit test device, comprising: comparing bits of an m-bit data signal with corresponding bits of expected data, where m is a positive integer;counting a number of fail bits based on whether the bits of the m-bit data signal are the same as the corresponding bits of expected data;generating a correction control signal based on the counted number of fail bits and a user input test mode register set (TMRS) signal;generating comparison signals based on the number of fail bits and the address of each fail bit; andgenerating and outputting correction signals by performing at least one logic operation on the correction control signal and the comparison signals.
Priority Claims (1)
Number Date Country Kind
10-2006-0096136 Sep 2006 KR national