Partially transparent IC card

Information

  • Patent Grant
  • D449308
  • Patent Number
    D449,308
  • Date Filed
    Friday, November 26, 1999
    25 years ago
  • Date Issued
    Tuesday, October 16, 2001
    23 years ago
Abstract
Description




FIG. 1 is a enlarged top, front and right side perspective view of partially transparent IC card showing our new design;




FIG. 2 is a top plan view thereof;




FIG. 3 is a front elevational view thereof;




FIG. 4 is a rear elevational view thereof;




FIG. 5 is a right side elevational view thereof;




FIG. 6 is a left side elevational view thereof;




FIG. 7 is a bottom plan view thereof; and,




FIG. 8 is a greatly enlarged cross-sectional view thereof taken along line 8—8 in FIG. 2.




The phantom line showing in the drawings is for illustrative purposes only and forms no part of the claimed design.



Claims
  • The ornamental design for partially transparent IC card, as shown and described.
US Referenced Citations (10)
Number Name Date Kind
D. 271298 Fujimoto Nov 1983
D. 283893 Fujimoto May 1986
D. 347215 Ikenaga May 1994
D. 358586 Miyazaki et al. May 1995
D. 368903 Ohmori et al. Apr 1996
D. 369156 Ohmori et al. Apr 1996
D. 369157 Ohmori et al. Apr 1996
D. 392954 Ikenaga Mar 1998
D. 407392 Kleineidam Mar 1999
D. 416886 Hirai et al. Nov 1999
Non-Patent Literature Citations (2)
Entry
Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 128 Mbit (16M×8bit) CMOS NAND E2PROM (16M Byte SmartMedia™), Toshiba, Nov. 6, 1998.
Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS 64 Mbit (8M×8bit) CMOS NAND E2PROM (8M byte SmartMedia™), Toshiba, Nov. 6, 1998.