Patent Application
20210395608
The present invention relates to particles, a composition, a film, a laminated structure, a light-emitting device, and a display.
Priority is claimed on Japanese Patent Application No. 2018-202356, filed on Oct. 26, 2018, the content of which is incorporated herein by reference.
In recent years, there has been an increasing interest in semiconductor particles having a high quantum yield as a luminescent material. On the other hand, the luminescent materials are required to have stability. As a composition containing a perovskite compound, for example, a perovskite compound coated with 3-aminopropyltriethoxysilane has been reported (Non-Patent Document 1).
However, the compositions containing the perovskite compound as described in Non-Patent Document 1 do not necessarily have sufficient durability with respect to light. That is, the above-mentioned composition was deteriorated by receiving the excitation light, and the quantum yield was lowered. Therefore, the light emitting material having high durability with respect to light has been demanded.
The present invention has been made in view of the above circumstances, and the object of the present invention is to provide luminescent particles having high durability with respect to light. Further, another object of the present invention is to provide a composition, a film, and a laminated structure containing the particles. Further another object of the present invention is to provide a light-emitting device and a display containing the laminated structure.
In order to solve the above problems, one embodiment of the present invention provides particles including:
a component (1) and a component (2), wherein:
the component (2) covers at least a part of the surface of the component (1),
the component (2) has a layer of an organic silicon compound having a siloxane bond and a layer of an inorganic silicon compound having a siloxane bond,
the component (1) is luminescent semiconductor particles, and
the component (2) is a coating layer.
In one embodiment of the present invention, the organic silicon compound having a siloxane bond may be at least one compound selected from the group consisting of a modified product of silazane, a modified product of a compound represented by formula (C1) (provided that Y5 is a single bond), a modified product of a compound represented by formula (A5-51), and a modified product of a compound represented by formula (A5-52), and
the inorganic silicon compound having a siloxane bond may be at least one compound selected from the group consisting of a modified product of silazane, a modified product of a compound represented by formula (C1) (provided that Y5 is not a single bond), a modified product of a compound represented by formula (C2), and a modified product of sodium silicate,
wherein:
in the formula (C1), Y5 represents a single bond, an oxygen atom, or a sulfur atom,
with the proviso that, when Y5 is an oxygen atom, each of R30 and R31 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms, and
when Y5 is a single bond or a sulfur atom, R30 represents an alkyl group having 1 to 20 carbon atoms, a cycloalkyl having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms, and R31 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms;
in the formula (C2), each of R30, R31 and R32 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms;
in the formulae (C1) and (C2),
hydrogen atoms in the alkyl group, the cycloalkyl group and the unsaturated hydrocarbon group as R30, R31 or R32 are each independently substituted by or not substituted by a halogen atom or an amino group, and
a is an integer of 1 to 3, with the proviso that,
when a is 2 or 3, a plurality of Y5 is the same or different,
when a is 2 or 3, a plurality of R30 is the same or different,
when a is 2 or 3, a plurality of R32 is the same or different,
when a is 1 or 2, a plurality of R31 is the same or different,
wherein AC is a divalent hydrocarbon group and Y15 is an oxygen atom or a sulfur atom,
each of R122 and R123 is independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 30 carbon atoms, R124 is an alkyl group having 1 to 20 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms, and each of R125 and R126 is independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 30 carbon atoms, with the proviso that
hydrogen atoms in the alkyl group and the cycloalkyl group as R122 to R126 are each independently substituted by or not substituted by a halogen atom or an amino group.
In one embodiment of the present invention, the component (1) may be a perovskite compound including constituent components A, B, and X,
wherein the constituent component A indicates a component positioned at each vertex of a hexahedron having the constituent component B at its center in a perovskite type crystal structure, and is a monovalent cation,
the constituent component X indicates a component positioned at each vertex of an octahedron having the constituent component B at the center in the perovskite type crystal structure, and is one or more kinds of anions selected from the group consisting of a halide ion and a thiocyanate ion,
the constituent component B indicates a component positioned at a center of a hexahedron having the constituent component A at each vertex and at a center of an octahedron having the constituent component X at each vertex in the perovskite type crystal structure, and is a metal ion.
In one embodiment of the present invention, the particles may include a surface modifier layer covering at least a part of the surface of the component (1), wherein
the surface modifier layer has at least one compound or ion as a fabrication material, which is selected from the group consisting of an ammonium ion, an amine, primary to quaternary ammonium cations, an ammonium salt, a carboxylic acid, a carboxylate ion, a carboxylate salt, compounds respectively represented by formulae (X1) to (X6), and salts of the compounds respectively represented by formulae (X2) to (X4):
wherein:
in the formula (X1), each of R18 to R21 is independently an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, which is or is not substituted, and M− is a counter anion;
in the formula (X2), A1 is a single bond or an oxygen atom, and R22 is an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, which is or is not substituted;
in the formula (X3), each of A2 and A3 independently represents a single bond or an oxygen atom, and each of R23 and R24 independently represents an alkyl groups having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, which is or is not substituted;
in the formula (X4), A4 represents a single bond or an oxygen atom, and R25 represents an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an aryl group having 6 to 30 carbon atoms, which is or is not substituted;
in the formula (X5), each of A5 to A7 independently represents a single bond or an oxygen atom, and each of R26 to R28 independently represents an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an alkynyl group having 2 to 20 carbon atoms, which is or is not substituted;
in the formula (X6), each of A8 to A10 independently represents a single bond or an oxygen atom, and each of R29 to R31 independently represents an alkyl group having 1 to 20 carbon atom, a cycloalkyl group having 3 to 30 carbon atoms, an aryl group of 6 to 30 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an alkynyl group having 2 to 20 carbon atoms, which is or is not substituted,
with the proviso that hydrogen atoms in the groups represented by R18 to R31 are each independently substituted or not substituted by a halogen atom.
In one embodiment of the present invention, a composition including the particles and at least one component selected from the group consisting of a component (3), a component (4), and a component (4-1) is provided, wherein:
the component (3) is a solvent;
the component (4) is a polymerizable compound; and
the component (4-1) is a polymer.
In one embodiment of the present invention, a film including the composition as a fabrication material is provided.
In one embodiment of the present invention, a laminated structure including the film is provided.
In one embodiment of the present invention, a light-emitting device including the laminated structure is provided.
In one embodiment of the present invention, a display including the laminated structure is provided.
The present invention can provide luminescent particles having high durability with respect to light. Further, the present invention can provide a composition, a film, and a laminated structure, containing the particles having high durability with respect to light. Further, the present invention can provide a light-emitting device and a display containing the laminated structure having high durability with respect to light.
Hereinafter, the present invention will be described in detail based on embodiments. In the following description, the structure of the particles will be described, and then the material for forming the particles and the production method for the particles will be described in order.
<<Particles>>
Particles according to the present embodiment has a light-emitting property. The “light-emitting property” indicates a property of emitting light. As the light-emitting property, a property of emitting light using excitation of electrons is preferable, and a property of emitting light using excitation of electrons caused by excitation light is more preferable. The wavelength of excitation light may be, for example, in a range of 200 nm to 800 nm, in a range of 250 nm to 750 nm, or in a range of 300 nm to 700 nm.
The particles of the present embodiment have luminescent semiconductor particles (1) (hereinafter, also simply referred to as “semiconductor particles (1)”) and a coating layer (2). The coating layer (2) covers at least a part of the surface of semiconductor particles (1).
In the following description, the particles according to the present embodiment are referred to as “luminescent particles”, in order to literally distinguish the particles according to the present embodiment from the semiconductor particles (1) constituting the particles.
Covering the “surface” of the semiconductor particles (1) with the coating layer (2) encompasses covering the surface of the semiconductor particles (1) with the coating layer (2) without direct contact therebetween by forming the contact layer (2) directly on another layer formed on the surface of the semiconductor particles (1), as well as covering the surface of the semiconductor particles with the coating layer (2) by direct contact between the semiconductor particles (1) and the coating layer (2).
The coating layer (2) includes a layer (2-1) of an organic silicon compound having a siloxane bond and a layer (2-2) of an inorganic silicon compound having a siloxane bond. Specifically, the luminescent particles include semiconductor particles (1), the layer (2-1) of an organic silicon compound having a siloxane bond, and the layer (2-2) of an inorganic silicon compound having a siloxane bond.
In the present specification, the term “organic silicon compound having a siloxane bond” refers to a silicon compound having a siloxane bond and having an organic group which is not eliminated from the silicon atom.
In the present specification, the term “inorganic silicon compound having a siloxane bond” refers to a silicon compound having a siloxane bond and having no organic group which is not eliminated from the silicon atom.
It is preferable that at least a part of the surface of the semiconductor particles (1) is covered with the layer (2-1) of the organic silicon compound having a siloxane, and then covered with the layer (2-2) of the inorganic silicon compound having a siloxane bond. In this case, the layer (2-1) of the organic silicon compound having a siloxane bond may be overlapped with the layer (2-2) of the inorganic silicon compound having a siloxane bond.
In the luminescent particles of the present embodiment, it is preferable that the entire surface of the semiconductor particles (1) is covered with the layer (2-1) of the organic silicon compound having a siloxane bond, and then the surface of the layer (2-1) of the organic silicon compound having a siloxane bond is further covered with the layer (2-2) of the inorganic silicon compound having a siloxane bond.
The luminescent particles of the present embodiment may have a surface modifier layer between the semiconductor particles (1) and the coating layer (2). Specifically, at least a part of the surface of the semiconductor particles (1) may be covered with the surface modifier layer, and then at least a part of the surface of the surface modifier layer may be further covered with the coating layer (2).
The shape of the luminescent particles of the present embodiment is not particularly limited, and examples thereof include a spherical shape, a distorted spherical shape, a go stone shape, and a rugby ball shape. The average size of the luminescent particles is not particularly limited, and the average Ferret diameter is in a range of 0.1 to 30 μm, preferably in a range of 0.1 to 10 μm. Examples of the method for calculating the average Ferret diameter include a method based on observation of the luminescent particles using a transmission electron microscope (hereinafter, also referred to as TEM) or a scanning electron microscope (hereinafter, also referred to as SEM), in which 20 arbitrarily chosen luminescent particles in a TEM image or SEM image of the luminescent particles are observed to determine the average value of the respective Ferret diameters.
The “Ferret diameter” in the present specification indicates the distance between two straight lines parallel to each other which interpose the image of the luminescent particle therebetween on a TEM or SEM image.
When determining the average Ferret diameter, all of the parallel lines for measuring the respective Ferret diameters of the multiple luminescent particles should be parallel to each other. For example, when the field of view of the SEM image is rectangular, the Ferret diameter is determined from the distance between two straight parallel lines sandwiching a luminescent particle to be measured, where the parallel lines are drawn parallel to opposing two sides of the rectangular field of view.
The following effects can be expected from the luminescent particles of the present embodiment.
First, the luminescent semiconductor particles (1) contained in the luminescent particles of the present embodiment may react with moisture and deteriorate, resulting in deterioration in performance. Therefore, in the luminescent particles of the present embodiment, the surface of the semiconductor particles (1) is covered with the coating layer (2) to suppress contact between the semiconductor particles (1) and moisture.
Here, in the luminescent particles of the present embodiment, the coating layer (2) has the layer (2-1) of the organic silicon compound having a siloxane bond and the layer (2-2) of the inorganic silicon compound having a siloxane bond.
The organic silicon compound having a siloxane bond has an organic group. Therefore, in a case where the luminescent particles have the layer (2-1) of the organic silicon compound having a siloxane bond as the coating layer (2), the luminescent particles are likely to be dispersed in an organic solvent and aggregation thereof is likely to be suppressed.
On the other hand, the inorganic silicon compound having a siloxane bond does not have an organic group which causes steric hindrance when forming a three-dimensional structure. Therefore, the layer (2-2) of the inorganic silicon compound having a siloxane bond tends to be a denser layer than the layer (2-1) of the organic silicon compound having a siloxane bond, and it is difficult for moisture to permeate.
The luminescent particles of the present embodiment have high durability with respect to light. This is presumably because it is possible to form a dense protective layer while suppressing aggregation of the particles through the synergistic effect of characteristics of the two silicon compound layers, i.e., the layer (2-1) of the organic silicon compound having siloxane bond and the layer (2-2) of the inorganic silicon compound having siloxane bond, thereby suppressing the light-promoted reaction between the semiconductor particles and moisture.
The details of each configurations are described below.
<<(1) Semiconductor Particles>>
Examples of the semiconductor particles contained in the luminescent particles of the present embodiment include the following (i) to (viii).
(i) Semiconductor particles containing Group II-VI compound semiconductor
(ii) Semiconductor particles containing Group II-V compound semiconductor
(iii) Semiconductor particles containing Group III-V compound semiconductor
(iv) Semiconductor particles containing Group III-IV compound semiconductor
(v) Semiconductor particles containing Group III-VI compound semiconductor
(vi) Semiconductor particles containing Group IV-VI compound semiconductor
(vii) Semiconductor particles containing transition metal-p-block compound semiconductor
(viii) Semiconductor particles containing a compound semiconductor having a perovskite structure
<(i) Semiconductor Particles Containing Group II-VI Compound Semiconductor>
Examples of the Group II-VI compound semiconductor include a compound semiconductor containing the Group 2 element and the Group 16 element in the periodic table, and a compound semiconductor containing the Group 12 element and the Group 16 element in the periodic table.
In the present specification, the “periodic table” indicates the long-period type periodic table.
In the following description, the compound semiconductor containing the Group 2 element and the Group 16 element is sometimes referred to as a “compound semiconductor (i-1)”, and the compound semiconductor containing the Group 12 element and the Group 16 element is sometimes referred to as a “compound semiconductor (i-2)”.
Among the compound semiconductors (i-1), examples of the binary compound semiconductor include MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, and BaTe.
Further, the compound semiconductor (i-1) may be a ternary compound semiconductor (i-1-1) containing one type of Group 2 element and two types of Group 16 element, a ternary compound semiconductor (i-1-2) containing two types of Group 2 element and one type of Group 16 element, or a quaternary compound semiconductor (i-1-3) containing two types of Group 2 element and two types of Group 16 element.
Among the compound semiconductors (i-2), examples of the binary compound semiconductor include ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, and HgTe.
Further, the compound semiconductor (i-2) may be a ternary compound semiconductor (i-2-1) containing one type of Group 12 element and two types of Group 16 element, a ternary compound semiconductor (i-2-2) containing two types of Group 12 element and one type of Group 16 element, or a quaternary compound semiconductor (i-2-3) containing two types of Group 12 element and two types of Group 16 element.
The Group II-VI compound semiconductor may contain an element other than the Group 2 elements, the Group 12 elements, and the Group 16 elements as a doping element.
<(ii) Semiconductor Particles Containing Group II-V Compound Semiconductor>
The Group II-V compound semiconductor include the Group 12 element and the Group 15 element.
Among the Group II-V compound semiconductor, examples of the binary compound semiconductor include Zn3P2, Zn3As2, Cd3P2, Cd3As2, Cd3N2, and Zn3N2.
Further, the Group II-V compound semiconductor may be a ternary compound semiconductor (ii-1) containing one type of Group 12 element and two types of Group 15 element, a ternary compound semiconductor (ii-2) containing two types of Group 12 element and one type of Group 15 element, or a quaternary compound semiconductor (ii-3) containing two types of Group 12 element and two types of Group 15 element.
The Group II-V compound semiconductor may contain an element other than the Group 12 elements and the Group 15 elements as a doping element.
<(iii) Semiconductor Particles Containing Group III-V Compound Semiconductor>
The Group III-V compound semiconductor include the Group 13 element and the Group 15 element.
Among the Group III-V compound semiconductor, examples of the binary compound semiconductor include BP, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, and BN.
Further, the Group III-V compound semiconductor may be a ternary compound semiconductor (iii-1) containing one type of Group 13 element and two types of Group 15 element, a ternary compound semiconductor (iii-2) containing two types of Group 13 element and one type of Group 15 element, or a quaternary compound semiconductor (iii-3) containing two types of Group 13 element and two types of Group 15 element.
The Group III-V compound semiconductor may contain an element other than the Group 13 elements and the Group 15 elements as a doping element.
<(iv) Semiconductor Particles Containing Group III-IV Compound Semiconductor>
The Group III-IV compound semiconductor include the Group 13 element and the Group 14 element.
Among the Group III-IV compound semiconductor, examples of the binary compound semiconductor include B4C3, Al4C3, and Ga4C3.
Further, the Group III-IV compound semiconductor may be a ternary compound semiconductor (iv-1) containing one type of Group 13 element and two types of Group 14 element, a ternary compound semiconductor (iv-2) containing two types of Group 13 element and one type of Group 14 element, or a quaternary compound semiconductor (iv-3) containing two types of Group 13 element and two types of Group 14 element.
The Group III-IV compound semiconductor may contain an element other than the Group 13 elements and the Group 14 elements as a doping element.
<(V) Semiconductor Particles Containing Group III-VI Compound Semiconductor>
The Group III-VI compound semiconductor include the Group 13 element and the Group 16 element.
Among the Group III-VI compound semiconductor, examples of the binary compound semiconductor include Al2S3, Al2Se3, Al2Te3, Ga2S3, Ga2Se3, Ga2Te3, GaTe, In2S3, In2Se3, In2Te3, and InTe.
Further, the Group III-VI compound semiconductor may be a ternary compound semiconductor (v-1) containing one type of Group 13 element and two types of Group 16 element, a ternary compound semiconductor (v-2) containing two types of Group 13 element and one type of Group 16 element, or a quaternary compound semiconductor (v-3) containing two types of Group 13 element and two types of Group 16 element.
The Group III-VI compound semiconductor may contain an element other than the Group 13 elements and the Group 16 elements as a doping element.
<(vi) Semiconductor Particles Containing Group IV-VI Compound Semiconductor>
The Group IV-VI compound semiconductor include the Group 14 element and the Group 16 element.
Among the Group IV-VI compound semiconductor, examples of the binary compound semiconductor include PbS, PbSe, PbTe, SnS, SnSe, and SnTe.
Further, the Group IV-VI compound semiconductor may be a ternary compound semiconductor (vi-1) containing one type of Group 14 element and two types of Group 16 element, a ternary compound semiconductor (vi-2) containing two types of Group 14 element and one type of Group 16 element, or a quaternary compound semiconductor (vi-3) containing two types of Group 14 element and two types of Group 16 element.
The Group IV-VI compound semiconductor may contain an element other than the Group 14 elements and the Group 16 elements as a doping element.
<(vii) Semiconductor Particles Containing Transition Metal-p-Block Compound Semiconductor>
The transition metal-p-block compound semiconductor include transition metal element and p-block element. The “p-block element” is an element belonging to Groups 13 to 18 of the periodic table.
Among the transition metal-p-block compound semiconductors, examples of the binary compound semiconductor include NiS and CrS.
Further, the transition metal-p-block compound semiconductor may be a ternary compound semiconductor (vii-1) containing one type of transition metal element and two types of p-block element, a ternary compound semiconductor (vii-2) containing two types of transition metal element and one type of p-block element, or a quaternary compound semiconductor (vii-3) containing two types of transition metal element and two types of p-block element.
The transition metal-p-block compound semiconductor may contain an element other than transition metal and p-block element as a doping element.
Specific examples of the above described ternary compound semiconductor and quaternary compound semiconductor include ZnCdS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, ZnCdSSe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, CuInS2 and InAlPAs.
In the luminescent particles of the present embodiment, among the above described compound semiconductors, a compound semiconductor containing Cd which is the Group 12 element, and a compound semiconductor containing In which is the Group 13 element are preferable. Further, in the luminescent particles of the present embodiment, among the above described compound semiconductors, a compound semiconductor containing Cd and Se and a compound semiconductor containing In and P are preferable.
As the compound semiconductor containing Cd and Se, any of a binary compound semiconductor, a ternary compound semiconductor, and a quaternary compound semiconductor is preferable. Among them, CdSe, which is a binary compound semiconductor, is particularly preferable.
As the compound semiconductor containing In and P, any of a binary compound semiconductor, a ternary compound semiconductor, and a quaternary compound semiconductor is preferable. Among them, InP, which is a binary compound semiconductor, is particularly preferable.
<(viii) Semiconductor Particles Containing a Compound Semiconductor Having a Perovskite Structure>
The compound semiconductor having a perovskite structure includes constituent components A, B, and X and has a perovskite type crystal structure. In the following description, a compound semiconductor having perovskite structure is sometimes referred to as a “perovskite compound”.
The constituent component A indicates a component positioned at each vertex of a hexahedron having the constituent component B at its center in a perovskite type crystal structure, and is a monovalent cation.
The constituent component B indicates a component positioned at a center of a hexahedron having the constituent component A at each vertex and at a center of an octahedron having the constituent component X at each vertex in the perovskite type crystal structure, and is a metal ion. B represents a metal cation which can have octahedral coordination of X.
The constituent component X indicates a component positioned at each vertex of an octahedron having the constituent component B at the center in the perovskite type crystal structure, and is one or more kinds of anions selected from the group consisting of a halide ion and a thiocyanate ion.
The perovskite compound having the constituent components A, B, and X is not particularly limited, and may be a compound having any of a three-dimensional structure, a two-dimensional structure, and a quasi-two-dimensional (quasi-2D) structure.
In a case of the three-dimensional structure, the composition of the perovskite compound is represented by ABX(3+δ).
In a case of the two-dimensional structure, the composition of the perovskite compound is represented by A2BX(4+δ).
Here, the parameter δ is a number which can be appropriately changed according to the charge balance of B and is in a range of −0.7 to 0.7. For example, in a case where A represents a monovalent cation, B represents a divalent cation, and X represents a monovalent anion, the parameter δ can be selected such that the perovskite compound becomes electrically neutral. When the perovskite compound is electrically neutral, it means that the charge of the perovskite compound is zero.
The perovskite compound contains an octahedron which has B as the center and X as the vertex. The octahedron is represented by BX6.
In the case where the perovskite compound has the three-dimensional structure, BX6 contained in the perovskite compound forms the three-dimensional network by sharing one X located at the vertex in the octahedron (BX6) with two adjacent octahedrons (BX6) in the crystal.
In the case where the perovskite compound has the two-dimensional structure, BX6 contained in the perovskite compound forms the two-dimensionally continuous layer by sharing the two Xs located at the vertices of the octahedron (BX6) with the two adjacent octahedrons (BX6) in the crystal, and sharing the ridgeline of the octahedron. The perovskite compound contains a structure in which a layer formed of two-dimensionally connected BX6 and a layer formed of A are alternately laminated.
In the present specification, the crystal structure of the perovskite compound can be confirmed by an X-ray diffraction pattern.
In a case of the perovskite compound having the perovskite type crystal structure of the three-dimensional structure, typically, a peak derived from (hkl)=(001) is confirmed at a position where 2θ is in a range of 12° to 18° or a peak derived from (hkl)=(110) is confirmed at a position where 2θ is in a range of 18° to 25° in the X ray diffraction pattern.
In a case of the perovskite compound having the perovskite type crystal structure of the three-dimensional structure, it is preferable that a peak derived from (hkl)=(001) is confirmed at a position where 2θ is in a range of 13° to 16° or a peak derived from (hkl)=(110) is confirmed at a position where 2θ is in a range of 20° to 23°.
In a case of the perovskite compound having the perovskite type crystal structure of the two-dimensional structure, typically, a peak derived from (hkl)=(002) is confirmed at a position where 2θ is in a range of 1° to 10° in the X ray diffraction pattern. Further, it is preferable that a peak derived from (hkl)=(002) is confirmed at a position where 2θ is in a range of 2° to 8°.
The perovskite compound preferably has the three-dimensional structure.
(Constituent Component A)
The constituent component A in the perovskite compound is a monovalent cation. Examples of the constituent component A include a cesium ion, an organic ammonium ion, and an amidinium ion.
(Organic Ammonium Ion)
Specific examples of the organic ammonium ion as the constituent component A include a cation represented by Formula (A3).
In Formula (A3), R6 to R9 each independently represent a hydrogen atom, an alkyl group, or cycloalkyl group. However, at least one of R6 to R9 is an alkyl group or a cycloalkyl group, and not all of R6 to R9 simultaneously represent hydrogen atoms.
The alkyl groups represented by R6 to R9 may be linear or branched. Further, the alkyl group represented by each of independent R6 to R9 may have an amino group as a substituent.
In a case where R6 to R9 represent an alkyl group, the number of carbon atoms of each of independent R6 to R9 is typically in a range of 1 to 20, preferably in a range of 1 to 4, still more preferably in a range of 1 to 3, and even still more preferably 1.
The cycloalkyl group represented by each of independent R6 to R9 may have an amino group as a substituent.
The number of carbon atoms of the cycloalkyl group represented by each of independent R6 to R9 is typically in a range of 3 to 30, preferably in a range of 3 to 11, and more preferably in a range of 3 to 8. The number of carbon atoms include the number of carbon atoms in a substituent.
As the group represented by each of independent R6 to R9, a hydrogen atom or an alkyl group is preferable.
In a case where the perovskite compound contains an organic ammonium ion represented by Formula (A3) as the constituent component A, the number of alkyl groups and cycloalkyl groups contained in Formula (A3) is preferably small. Further, the number of carbon atoms of the alkyl group and the cycloalkyl group contained in Formula (A3) is preferably small. As a result, a perovskite compound having a three-dimensional structure with high light-emitting intensity can be obtained.
In the organic ammonium ion represented by Formula (A3), the total number of carbon atoms contained in the alkyl group represented by R6 to R9 and the cycloalkyl group is preferably 1 to 4. Further, in the organic ammonium ion represented by Formula (A3), it is preferable that one of R6 to R9 is an alkyl group having 1 to 3 carbon atoms, and three of R6 to R9 are hydrogen atoms.
Examples of the alkyl group as R6 to R9 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a neopentyl group, a tert-pentyl group, a 1-methylbutyl group, an n-hexyl group, a 2-methylpentyl group, a 3-methylpentyl group, a 2,2-dimethylbutyl group, a 2,3-dimethylbutyl group, an n-heptyl group, a 2-methylhexyl group, a 3-methylhexyl group, a 2,2-dimethylpentyl group, a 2,3-dimethylpentyl group, a 2,4-dimethylpentyl group, a 3,3-dimethylpentyl group, a 3-ethylpentyl group, a 2,2,3-trimethylbutyl group, an n-octyl group, an isooctyl group, a 2-ethylhexyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, a tridecyl group, a tetradecyl group, a pentadecyl group, a hexadecyl group, a heptadecyl group, an octadecyl group, a nonadecyl group, and an icosyl group.
As the cycloalkyl group as R6 to R9, a group in which an alkyl group having 3 or more carbon atoms which has been provided as an exemplary example of the alkyl group represented by each of independent R6 to R9 forms a ring is an exemplary example. Examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclononyl group, a cyclodecyl group, a norbornyl group, an isobornyl group, a 1-adamantyl group, a 2-adamantyl group, and a tricyclodecyl group.
As the organic ammonium ion represented by the constituent component A, CH3NH3+ (also referred to as a methylammonium ion), C2H5NH3+ (also referred to as an ethylammonium ion), or C3H7NH3+ (also referred to as a propylammonium ion) is preferable, CH3NH3+ or C2H5NH3+ is more preferable, and CH3NH3+ is still more preferable.
(Amidinium Ion)
As the amidinium ion represented by constituent component A, an amidinium ion represented by Formula (A4) is an exemplary example.
(R10R11N═CH—NR12R13)+ (A4)
In Formula (A4), R10 to R13 each independently represent a hydrogen atom, an alkyl group which may contain an amino group as a substituent, or a cycloalkyl group which may contain amino group as a substituent.
The alkyl group represented by each of independent R10 to R13 may be linear or branched. Further, the alkyl group represented by each of independent R10 to R13 may have an amino group as a substituent.
The number of carbon atoms in the alkyl group represented by each of independent R10 to R13 is typically in a range of 1 to 20, preferably in a range of 1 to 4, and more preferably in a range of 1 to 3.
The cycloalkyl group represented by each of independent R10 to R13 may contain an amino group as a substituent.
The number of carbon atoms of the cycloalkyl group represented by each of independent R10 to R13 is typically in a range of 3 to 30, preferably in a range of 3 to 11, and more preferably in a range of 3 to 8. The number of carbon atoms include the number of carbon atoms in a substituent.
Specific examples of the alkyl group as R10 to R13 are the same as those provided as exemplary examples of the alkyl group represented by each of independent R6 to R9.
Specific examples of the cycloalkyl group as R10 to R13 are the same as those provided as exemplary examples of the cycloalkyl group represented by each of independent R6 to R9.
As the group represented by each of independent R10 to R13, a hydrogen atom or an alkyl group is preferable.
A perovskite compound having a three-dimensional structure with high emission intensity can be obtained by decreasing the number of alkyl groups and cycloalkyl groups included in Formula (A4) and decreasing the number of carbon atoms in the alkyl group and the cycloalkyl group.
In the amidinium ion, it is preferable that the total number of carbon atoms contained in the alkyl group and the cycloalkyl group represented by R10 to R13 is 1 to 4, and it is more preferable that R10 is an alkyl group having 1 to 3 carbon atoms and R11 to R13 are hydrogen atoms.
In a case where the constituent component A is a cesium ion, an organic ammonium ion having 3 or less carbon atoms, or an amidinium ion having 3 or less carbon atoms in the perovskite compound, the perovskite compound typically has a three-dimensional structure.
In a case where the constituent component A is a an organic ammonium ion having 4 or more carbon atoms, or an amidinium ion having 4 or more carbon atoms in the perovskite compound, the perovskite compound has one or both of a two-dimensional structure and a quasi-two-dimensional (quasi-2D) structure. In this case, the perovskite compound can have the two-dimensional structure or the quasi-two-dimensional structure in a part or the whole of the crystal.
In a case where a plurality of two-dimensional perovskite type crystal structures are laminated, the resulting structure becomes equivalent to the three-dimensional perovskite type crystal structure (reference literature: P. P. Boix et al., J. Phys. Chem. Lett. 2015, 6, 898 to 907, etc.).
In the perovskite compound, a cesium ion or an amidinium ion is preferable as the constituent component A.
(Constituent Component B)
The constituent component B in the perovskite compound may be one or more metal ions selected from the group consisting of a monovalent metal ion, a divalent metal ion, and a trivalent metal ion. It is preferable that the constituent component B contains a divalent metal ion, it is more preferable that the constituent component B contains one or more metal ions selected from the group consisting of lead and tin, and it is still more preferable that the constituent component B contains lead ion.
(Constituent Component X)
The constituent component X in the perovskite compound may be one or more anions selected from the group consisting of a halide ion, and a thiocyanate ion.
Examples of the halide ion include a chloride ion, a bromide ion, a fluoride ion, and an iodide ion. The constituent component B is preferably a bromide ion.
In a case where the constituent component X is two or more kinds of halide ions, the content ratio of the halide ions can be appropriately selected according to the emission wavelength. For example, a combination of a bromide ion and a chloride ion or a combination of a bromide ion and an iodide ion can be employed.
The constituent component X can be appropriately selected according to a desired emission wavelength.
The perovskite compound in which the constituent component X is a bromide ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 480 nm or greater, preferably 500 nm or greater, and more preferably 520 nm or greater.
Further, the perovskite compound in which the constituent component X is a bromide ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 700 nm or less, preferably 600 nm or less, and more preferably 580 nm or less.
The upper limit values and lower limit values of the above-described wavelength range can be arbitrarily combined.
In a case where the constituent component X in the perovskite compound is a bromide ion, the peak of the emitted fluorescence is typically in a range of 480 nm to 700 nm, preferably in a range of 500 nm to 600 nm, and more preferably in a range of 520 nm to 580 nm.
The perovskite compound in which the constituent component X is a iodide ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 520 nm or greater, preferably 530 nm or greater, and more preferably 540 nm or greater.
Further, the perovskite compound in which the constituent component X is a iodide ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 800 nm or less, preferably 750 nm or less, and more preferably 730 nm or less.
The upper limit values and lower limit values of the above-described wavelength range can be arbitrarily combined.
In a case where the constituent component X in the perovskite compound is a iodide ion, the peak of the emitted fluorescence is typically in a range of 520 nm to 800 nm, preferably in a range of 530 nm to 750 nm, and more preferably in a range of 540 nm to 730 nm.
The perovskite compound in which the constituent component X is a chloride ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 300 nm or greater, preferably 310 nm or greater, and more preferably 330 nm or greater.
Further, the perovskite compound in which the constituent component X is a chloride ion is capable of emitting fluorescence having a maximum peak of the intensity in a wavelength range of typically 600 nm or less, preferably 580 nm or less, and more preferably 550 nm or less.
The upper limit values and lower limit values of the above-described wavelength range can be arbitrarily combined.
In a case where the constituent component X in the perovskite compound is a chloride ion, the peak of the emitted fluorescence is typically in a range of 300 nm to 600 nm, preferably in a range of 310 nm to 580 nm, and more preferably in a range of 330 nm to 550 nm.
(Example of the Perovskite Compound Having the Three-Dimensional Structure)
Preferred examples of the perovskite compound having the three-dimensional structure represented by ABX(3+δ) include CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CH3NH3PbBr(3-y)Iy(0<y<3), CH3NH3PbBr(3-y)Cly(0<y<3), (H2N═CH—NH2)PbBr3, (H2N═CH—NH2)PbCl3, and (H2N═CH—NH2) PbI3.
Preferred examples of the perovskite compound having the three-dimensional structure also include CH3NH3Pb(1-a)CaaBr3 (0<a≤0.7), CH3NH3Pb(1-a)SraBr3 (0<a≤0.7), CH3NH3Pb(1-a)LaaBr(3+δ) (0<a≤0.7, 0<δ≤0.7), CH3NH3Pb(1-a)BaaBr3 (0<a≤0.7), and CH3NH3Pb(1-a)DyaBr(3+δ) (0<a≤0.7, 0<δ≤0.7).
Preferred examples of the perovskite compound having the three-dimensional structure also include CH3NH3Pb(1-a)NaaBr(3+δ) (0<a≤0.7, —0.7≤δ<0) and CH3NH3Pb(1-a)LiaBr(3+δ) (0<a≤0.7, −0.7≤δ<0).
Preferred examples of the perovskite compound having the three-dimensional structure also include CsPb(1-a)NaaBr(3+δ) (0<a≤0.7, −0.7≤δ<0) and CsPb(1-a)LiaBr(3+δ) (0<a≤0.7, −0.7≤δ<0).
Preferred examples of the perovskite compound having the three-dimensional structure also include CH3NH3Pb(1-a)NaaBr(3+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<3), CH3NH3Pb(1-a)LiaBr(3+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<3), CH3NH3Pb(1-a)NaaBr(3+δ-y)Cly (0<a≤0.7, −0.7≤δ<0, 0<y<3), and CH3NH3Pb(1-a)LiaBr(3+δ-y)Cly (0<a≤0.7, −0.7≤δ<0, 0<y<3).
Preferred examples of the perovskite compound having the three-dimensional structure also include (H2N═CH—NH2)Pb(1-a)NaaBr(3+δ) (0<a≤0.7, −0.7≤δ<0), (H2N═CH—NH2)Pb(1-a)LiaBr(3+δ) (0<a≤0.7, −0.7≤δ<0), (H2N═CH—NH2)Pb(1-a)NaaBr(3+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<3), and (H2N═CH—NH2)Pb(1-a)NaaBr(3+δ-y)Cly(0<a≤0.7, −0.7≤δ<0, 0<y<3).
Preferred examples of the perovskite compound having the three-dimensional structure also include CsPbBr3, CsPbCl3, CsPbI3, CsPbBr(3-y)Iy(0<y<3), and CsPbBr(3-y)Cly (0<y<3).
Preferred examples of the perovskite compound having the three-dimensional structure also include CH3NH3Pb(1-z)ZnaBr3 (0<a≤0.7), CH3NH3Pb(1-a)AlaBr(3+δ) (0<a≤0.7, 0≤δ≤0.7), CH3NH3Pb(1-a)CoaBr3 (0<a≤0.7), CH3NH3Pb(1-a)MnaBr3 (0<a≤0.7), and CH3NH3Pb(1-a)MgaBr3 (0<a≤0.7).
Preferred examples of the perovskite compound having the three-dimensional structure also include CsPb(1-z)ZnaBr3 (0<a≤0.7), CsPb(1-a)AlaBr(3+δ) (0<a≤0.7, 0<δ≤0.7), CsPb(1-a)CoaBr3 (0<a≤0.7), CsPb(1-a)MnaBr3 (0<a≤0.7), and CsPb(1-a)MgaBr3 (0<a≤0.7).
Preferred examples of the perovskite compound having the three-dimensional structure also include CH3NH3Pb(1-a)ZnaBr(3-y)Iy(0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)AlaBr(3+δ-y)Iy (0<a≤0.7, 0<δ≤0.7, 0<y<3), CH3NH3Pb(1-a)CoaBr(3-y)Iy (0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)MnaBr(3-y)Iy (0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)MgaBr(3-y)Iy(0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)ZnaBr(3-y)Cly(0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)AlaBr(3+δ-y)Cly(0<a≤0.7, 0<δ≤0.7, 0<y<3), CH3NH3Pb(1-a)CoaBr(3+δ-y)Cly(0<a≤0.7, 0<y<3), CH3NH3Pb(1-a)MnaBr(3-y)Cly(0<a≤0.7, 0<y<3), and CH3NH3Pb(1-a)MgaBr(3-y)Cly(0<a≤0.7, 0<y<3).
Preferred examples of the perovskite compound having the three-dimensional structure also include (H2N═CH—NH2)ZnaBr3 (0<a≤0.7), (H2N═CH—NH2)MgaBr3 (0<a≤0.7), (H2N═CH—NH2)Pb(1-a)ZnaBr(3-y)Iy(0<a≤0.7, 0<y<3), and (H2N═CH—NH2)Pb(1-a)ZnaBr(3-y)Cly(0<a≤0.7, 0<y<3).
Among the above described perovskite compounds having the three-dimensional structure, CsPbBr3, CsPbBr(3-y)Iy(0<y<3), (H2N═CH—NH2)PbBr3 are more preferable, and (H2N═CH—NH2)PbBr3 is still more preferable.
(Example of the Perovskite Compound Having the Two-Dimensional Structure)
Preferred examples of the perovskite compound having the two-dimensional structure include (C4H9NH3)2PbBr4, (C4H9NH3)2PbCl4, (C4H9NH3)2PbI4, (C7H15NH3)2PbBr4, (C7H15NH3)2PbCl4, (C7H15NH3)2PbI4, (C4H9NH3)2Pb(1-a)LiaBr(4+δ) (0<a≤0.7, −0.7≤δ<0), (C4H9NH3)2Pb(1-a)NaaBr(4+δ) (0<a≤0.7, −0.7≤δ<0), and (C4H9NH3)2Pb(1-a)RbaBr(4+δ) (0<a≤0.7, −0.7≤δ<0).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C7H15NH3)2Pb(1-a)NaaBr(4+δ) (0<a≤0.7, −0.7≤δ<0), (C7H15NH3)2Pb(1-a)LiaBr(4+δ) (0<a≤0.7, −0.7≤δ<0), and (C7H15NH3)2Pb(1-a)RbaBr(4+δ) (0<a≤0.7, −0.7≤δ<0).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2Pb(1-a)NaaBr(4+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<4), (C4H9NH3)2Pb(1-a)LiaBr(4+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<4), and (C4H9NH3)2Pb(1-a)RbaBr(4+δ-y)Iy(0<a≤0.7, −0.7≤δ<0, 0<y<4).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2Pb(1-a)NaaBr(4+δ-y)Cly(0<a≤0.7, −0.7≤δ<0, 0<y<4), (C4H9NH3)2Pb(1-a)LiaBr(4+δ-y)Cly(0<a≤0.7, −0.7≤δ<0, 0<y<4), and (C4H9NH3)2Pb(1-a)RbaBr(4+δ-y)Cly(0<a≤0.7, −0.7≤δ<0, 0<y<4).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2PbBr4 and (C7H15NH3)2PbBr4.
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2PbBr(4-y)Cly(0<y<4) and (C4H9NH3)2PbBr(4-y)Iy(0<y<4).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2Pb(1-a)ZnaBr4 (0<a≤0.7), (C4H9NH3)2Pb(1-a)MgaBr4 (0<a≤0.7), (C4H9NH3)2Pb(1-a)CoaBr4 (0<a≤0.7), and (C4H9NH3)2Pb(1-a)MnaBr4 (0<a≤0.7).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C7H15NH3)2Pb(1-a)ZnaBr4 (0<a≤0.7), (C7H15NH3)2Pb(1-a)MgaBr4 (0<a≤0.7), (C7H15NH3)2Pb(1-a)CoaBr4 (0<a≤0.7), and (C7H15NH3)2Pb(1-a)MnaBr4 (0<a≤0.7).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2Pb(1-a)ZnaBr(4-y)Iy(0<a≤0.7, 0<y<4), (C4H9NH3)2Pb(1-a)MgaBr(4-y)Iy(0<a≤0.7, 0<y<4), (C4H9NH3)2Pb(1-a)CoaBr(4-y)Iy (0<a≤0.7, 0<y<4), and (C4H9NH3)2Pb(1-a)MnaBr(4-y)Iy(0<a≤0.7, 0<y<4).
Preferred examples of the perovskite compound having the two-dimensional structure also include (C4H9NH3)2Pb(1-a)ZnaBr(4-y)Cly(0<a≤0.7, 0<y<4), (C4H9NH3)2Pb(1-a)MgaBr(4-y)Cly (0<a≤0.7, 0<y<4), (C4H9NH3)2Pb(1-a)CoaBr(4-y)Cly(0<a≤0.7, 0<y<4), and (C4H9NH3)2Pb(1-a)MnaBr(4-y)Cly(0<a≤0.7, 0<y<4).
(Particle Diameter of the Semiconductor Particles)
The average particle diameter of the semiconductor particles (1) contained in the luminescent particles is not particularly limited, but the average particle diameter thereof is preferably 1 nm or greater, from the viewpoint of satisfactorily maintaining the crystal structure. The average particle diameter of the semiconductor particles is more preferably 2 nm or greater, and still more preferably 3 nm or greater.
Further, the average particle diameter of the semiconductor particles is preferably 10 μm or less because it is easy to maintain the desired light-emitting characteristics. The average particle diameter of the semiconductor particles is more preferably 1 μm or less, and still more preferably 500 nm or less. The “light-emitting characteristic” refers to optical characteristics such as the quantum yield, emission intensity, and color purity of the converted light obtained by irradiating the luminescent semiconductor particles with excitation light. The color purity can be evaluated by the half width of the spectrum of the converted light.
The upper limit values and lower limit values of the average particle diameter of the semiconductor particles can be arbitrarily combined.
For example, the average diameter of the semiconductor particles is preferably in a range of 1 nm to 10 μm, more preferably in a range of 2 nm to 1 μm, and still more preferably 3 nm to 500 nm.
In the present specification, the average particle diameter of the semiconductor particles can be measured using, for example, a TEM or a SEM. Specifically, the average particle diameter can be acquired by observing the maximum Feret diameter of twenty semiconductor particles using a TEM or a SEM and calculating the average maximum Feret diameter which is an average value of the obtained values.
The “maximum Feret diameter” in the present specification indicates the maximum distance between two straight lines parallel to each other which interpose the semiconductor particles therebetween on a TEM or SEM image.
The average diameter of the semiconductor particles (1) included in the luminescent particles can be determined, for examples, from element distribution image obtained by the element distribution of elements contained in the semiconductor particles (1) determined by using energy dispersive X-ray analysis (EDX) measurement based on the scanning transmission electron microscopy method (STEM) (STEM-EDX measurement). The average particle diameter can be acquired by measuring the maximum Feret diameter of twenty semiconductor particles from element distribution image, and calculating the average maximum Feret diameter which is an average value of the obtained values.
The median diameter (D50) of the semiconductor particles (1) is not particularly limited, but the median diameter (D50) thereof is preferably 3 nm or greater from the viewpoint of satisfactorily maintaining the crystal structure. The median diameter (D50) of the semiconductor particles is more preferably 4 nm or greater and still more preferably 5 nm or greater.
Further, the median diameter (D50) of the semiconductor particles is preferably 5 μm or less because it is easy to maintain the desired light-emitting characteristics. The average particle diameter of the semiconductor particles is more preferably 500 nm or less, and still more preferably 100 nm or less.
The upper limit values and lower limit values of the median diameter (D50) of the semiconductor particles can be arbitrarily combined.
For example, the median diameter (D50) of the semiconductor particles is preferably in a range of 3 nm to 5 μm, more preferably in a range of 4 nm to 500 nm, and still more preferably 5 nm to 100 nm.
In the present specification, the particle size distribution of the semiconductor particles can be measured using, for example, a TEM or a SEM. Specifically, the median diameter (D50) thereof can be acquired by observing the maximum Feret diameter of twenty semiconductor particles using a TEM or a SEM and calculating the median diameter based on the distribution.
In the particles of the present embodiment, one type of the semiconductor particles may be used alone, or two or more types of the semiconductor particles may be used in combination.
<<Coating Layer (2)>>
The luminescent particles of the present embodiment have a coating layer which covers at least a part of the surface of the above described semiconductor particles. The coating layer includes the following layer (2-1) and the following layer (2-2).
(2-1): a layer of the organic silicon compound having a siloxane bond
(2-2): a layer of the inorganic silicon compound having a siloxane bond
In the present specification, the term “organic silicon compound having a siloxane bond” refers to a silicon compound having a siloxane bond and having an organic group which is not eliminated from the silicon atom.
In the present specification, the term “inorganic silicon compound having a siloxane bond” refers to a silicon compound having a siloxane bond and having no organic group which is not eliminated from the silicon atom.
The coating layer contained in the particles of the present embodiment may have only one kind of organic silicon compound having a siloxane bond described later. or two or more kinds thereof may be used in combination.
The coating layer contained in the particles of the present embodiment may have only one kind of inorganic silicon compound having a siloxane bond described later. or two or more kinds thereof may be used in combination.
Examples of the organic silicon compound having a siloxane bond and the inorganic silicon compound having a siloxane bond include at least one compound selected from the group consisting of a modified product of silazane, a modified product of a compound represented by Formula (C1), a modified product of a compound represented by Formula (C2), a modified product of a compound represented by Formula (A5-51), a modified product of a compound represented by Formula (A5-52), and a modified product of sodium silicate.
In the present specification, the term “modification” means that a silicon compound having a Si—N bond, a Si—SR bond (R is a hydrogen atom or an organic group) or a Si—OR bond (R is a hydrogen atom or an organic group) is hydrolyzed to generate a silicon compound having a Si—O—Si bond. The Si—O—Si bond may be generated by an intermolecular condensation reaction or an intramolecular condensation reaction.
In the present specification, the term “modified product” refers to a compound obtained by modifying a silicon compound having a Si—N bond, a Si—SR bond, or a Si—OR bond.
Hereinafter, each modified product of “organic silicon compound having a siloxane bond” and “inorganic silicon compound having a siloxane bond” will be described in order.
(1. Modified Product of Silazane)
The organic silicon compound having a siloxane bond or the inorganic silicon compound having a siloxane bond may be a modified product of silazane.
A silazane is a compound having a Si—N—Si bond. The silazane may be linear, branched, or cyclic.
The silazane may be of a low molecular weight or a high molecular weight. In the present specification, the silazane having a high molecular weight is sometime referred to as polysilazane.
The “low-molecular-weight” in the present specification indicates that the number average molecular weight is less than 600.
Further, the “high-molecular-weight” indicates that the number average molecular weight is in a range of 600 to 2000.
In the present specification, the “number average molecular weight” indicates a value in terms of polystyrene to be measured according to a gel permeation chromatography (GPC) method.
(1-1. Modified Product 1 of Low Molecular Weight Silazane)
As the modified product of silazane, for example, the modified product of disilazane represented by the following Formula (B1), which is a low molecular weight silazane, is preferable.
In Formula (B1), R14 and R15 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkylsilyl group having 1 to 20 carbon atoms.
R14 and R15 may have a substituent such as an amino group. A plurality of R15's may be the same as or different from one another.
Examples of the low-molecular-weight silazane represented by Formula (B1) include 1,3-divinyl-1,1,3,3-tetramethyldisilazane, 1,3-diphenyltetramethyldisilazane, and 1,1,1,3,3,3-hexamethyldisilazane.
In above Formula (B1), the modified product of disilazane in which at least one of the plurality of R15's is the above described alkyl group, alkenyl group, cycloalkyl group, aryl group, or alkylsilyl group corresponds to the “organic silicon compound having a siloxane bond”.
Further, in above Formula (B1), the modified product of disilazane in which all of the plurality of R15's are hydrogen atoms corresponds to the “inorganic silicon compound having a siloxane bond”.
(1-2. Modified Product 2 of Low Molecular Weight Silazane)
As the modified product of silazane, for example, the modified product of a low molecular weight silazane represented by following Formula (B2) is also preferable.
In Formula (B2), R14 and R15 are the same as R14 and R15 in the above Formula (B1).
A plurality of R14's may be the same as or different from one another.
A plurality of R15's may be the same as or different from one another.
In Formula (B2), n1 represents an integer of 1 to 20. n1 may represent an integer of 1 to 10, or 1 or 2.
Examples of the low-molecular-weight silazane represented by Formula (B2) include octamethylcyclotetrasilazane, 2,2,4,4,6,6,-hexamethylcyclotrisilazane, and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane.
In above Formula (B2), the modified product of the low molecular weight silazane in which at least one of the plurality of R15's is the above described alkyl group, alkenyl group, cycloalkyl group, aryl group, or alkylsilyl group corresponds to the “organic silicon compound having a siloxane bond”.
Further, in above Formula (B2), the modified product of the low molecular weight silazane in which all of the plurality of R15's are hydrogen atoms corresponds to the “inorganic silicon compound having a siloxane bond”.
As the low-molecular-weight silazane, octamethylcyclotetrasilazane or 1,3-diphenyltetramethyldisilazane is preferable, and octamethylcyclotetrasilazane is more preferable.
(1-3. Modified Product 1 of High Molecular Weight Silazane)
As the modified product of silazane, for example, the modified product of the high molecular weight silazane (polysilazane) represented by following Formula (B3) is preferable.
A polysilazane is a polymer compound having a Si—N—Si bond. The constituent unit represented by Formula (B3) may be used alone or in combination of a plurality of kinds thereof.
In Formula (B3), R14 and R15 are the same as R14 and R15 in the above Formula (B1).
In Formula (B3), the symbol “*” represents a bonding site. R14 is bonded to the bonding site of the nitrogen atom at the end of the molecular chain.
R15 is bonded to the bonding site of the Si atom at the end of the molecular chain.
A plurality of R14's may be the same as or different from one another.
A plurality of R15's may be the same as or different from one another.
m represents an integer of 2 to 10000.
The polysilazane represented by Formula (B3) may be a perhydropolysilazane in which all of R14's and R15's represent a hydrogen atom.
The polysilazane represented by Formula (B3) may be an organopolysilazane in which at least one R15 represents a group other than the hydrogen atom. According to the application thereof, the perhydropolysilazane or organopolysilazane may be appropriately selected or can be used by being mixed.
In above Formula (B3), the modified product of the high molecular weight silazane in which at least one of the plurality of R15's is the above described alkyl group, alkenyl group, cycloalkyl group, aryl group, or alkylsilyl group corresponds to the “organic silicon compound having a siloxane bond”.
Further, in above Formula (B3), the modified product of the high molecular weight silazane in which all of the plurality of R15's are hydrogen atoms corresponds to the “inorganic silicon compound having a siloxane bond”.
(1-4. Modified Product 2 of High Molecular Weight Silazane)
As the modified product of silazane, for example, the modified product of polysilazane having a structure represented by following Formula (B4) is also preferable.
The polysilazane may have a ring structure in a portion of a molecule. For example, the polysilazane may have a structure represented by Formula (B4).
In Formula (B4), the symbol “*” represents a bonding site.
The bonding site of Formula (B4) may be bonded to the bonding site in polysilazane represented by Formula (B3) or the bonding site in constituent unit of polysilazane represented by Formula (B3).
Further, in a case where polysilazane contains plurality of structures represented by Formula (B4) in the molecule, the bonding site of the structure represented by Formula (B4) may be directly bonded to the bonding site of the structure represented by another Formula (B4).
R14 is bonded to the bonding site of nitrogen atom which is not bonded to any of the bonding site of polysilazane represented by Formula (3), the bonding site of the constituent unit of polysilazane represented by Formula (3), and the bonding site of the structure represented by another Formula (4).
R15 is bonded to the bonding site of Si atom which is not bonded to any of the bonding site of polysilazane represented by Formula (3), the bonding site of the constituent unit of polysilazane represented by Formula (3), and the bonding site of the structure represented by another Formula (4).
n2 represents an integer of 1 to 10000. n2 may represent an integer of 1 to 10, or 1 or 2.
A typical polysilazane has, for example, a structure in which a linear structure and a ring structure such as a 6-membered ring or a 8-membered ring are present. In other words, a typical polysilazane has a structure represented by the Formula (B3) or a structure represented by Formula (B4). The molecular weight of a typical polysilazane is approximately 600 to 2000 (in terms of polystyrene) as the number average molecular weight (Mn), and the silazane may be a substance in a liquid or solid state depending on the molecular weight thereof
As the polysilazane, a commercially available product may be used, and examples of the commercially available product include NN120-10, NN120-20, NAX120-20, NN110, NAX120, NAX110, NL120A, NL110A, NL150A, NP110, and NP140 (all manufactured by AZ Electronic Materials plc), AZNN-120-20, Durazane (registered trademark) 1500 Slow Cure, Durazane 1500 Rapid Cure, Durazane 1800, and Durazane 1033 (all manufactured by Merck Performance Materials Ltd.).
Among the above described polysilazane, AZNN-120-20 is preferable as a raw material of the inorganic silicon compound having a siloxane bond.
Further, among the above described polysilazane, Durazane 1500 Slow Cure or Durazane 1500 Rapid Cure is preferable as raw material of the organic silicon compound having a siloxane bond, and Durazane 1500 Slow Cure is more preferable.
In the polysilazane having the structure represented by above Formula (B4), the modified product of the high molecular weight silazane in which at least one of the plurality of R15's is the above described alkyl group, alkenyl group, cycloalkyl group, aryl group, or alkylsilyl group corresponds to the “organic silicon compound having a siloxane bond”.
Further, in the polysilazane having the structure represented by above Formula (B4), the modified product of the high molecular weight silazane in which all of the plurality of R15's are hydrogen atoms corresponds to the “inorganic silicon compound having a siloxane bond”.
In the modified product of low molecular weight silazane represented by Formula (B2), the ratio of silicon atoms not bonded to nitrogen atoms is preferably in a range of 0.1 to 100% with respect to all silicon atoms. Further, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably in a range of 10 to 98%, and still more preferably in a range of 30 to 95%.
The “ratio of silicon atoms not bonded to nitrogen atoms” can be obtained from “((Si (mol))−(N (mol) in SiN bond))/Si (mol)×100”, using the measured values described below. Considering the modification reaction, the “ratio of silicon atoms not bonded to nitrogen atoms” means the “ratio of silicon atoms contained in the siloxane bond generated by the modification treatment”.
In the modified product of polysilazane represented by Formula (B3), the ratio of silicon atoms not bonded to nitrogen atoms is preferably in a range of 0.1 to 100% with respect to all silicon atoms. Further, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably in a range of 10 to 98%, and still more preferably in a range of 30 to 95%.
In the modified product of polysilazane having the structure represented by Formula (B4), the ratio of silicon atoms not bonded to nitrogen atoms is preferably in a range of 0.1 to 100% with respect to all silicon atoms. Further, the ratio of silicon atoms not bonded to nitrogen atoms is more preferably in a range of 10 to 97%, and still more preferably in a range of 30 to 95%.
The number of Si atoms, the number of SiN bonds in the modified product can be measured by X-ray photoelectron spectroscopy (hereinafter, also referred to as XPS).
In the modified product, the “ratio of silicon atoms not bonded to nitrogen atoms” determined using the values measured by the above method is preferably 0.1 to 99%, more preferably 10 to 99%, and still more preferably 30 to 95%, with respect to the total silicon atoms.
As the modified product of silazane used in the coating layer, the organic silicon compound having a siloxane bond may be used alone or in the form of a mixture of two or more kinds thereof
Further, as the modified product of silazane used in the coating layer, the inorganic silicon compound having a siloxane bond may be used alone or in the form of a mixture of two or more kinds thereof
(2. Modified Product of Compound Represented by Formula (C1) and Modified Product of Compound Represented by Formula (C2))
The organic silicon compound having a siloxane bond or the inorganic silicon compound having a siloxane bond may be a modified product of a compound represented by following Formula (C1) or a modified product of a compound represented by following Formula (C2).
In the formula (C1), Y5 represents a single bond, an oxygen atom, or a sulfur atom.
In a case where Y5 is an oxygen atom, each of R30 and R31 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms.
In a case where Y5 is a single bond or a sulfur atom, R30 represents an alkyl group having 1 to 20 carbon atoms, a cycloalkyl having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms, and R31 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms.
In Formula (C2), each of R30, R31, and R32 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, or an unsaturated hydrocarbon group having 2 to 20 carbon atoms.
In Formula (C1) and (C2), hydrogen atoms included in the alkyl group, the cycloalkyl group and the unsaturated hydrocarbon group represented by R30, R31, or R32 are each independently substituted by or not substituted by a halogen atom or an amino group.
Examples of the halogen atom which may substitute the hydrogen atoms included in the alkyl group, the cycloalkyl group and the unsaturated hydrocarbon group represented by R30, R31, or R32 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
In Formula (C1) and Formula (C2), a is an integer of 1 to 3.
When a is 2 or 3, a plurality of Y5 is the same or different.
When a is 2 or 3, a plurality of R30 is the same or different.
When a is 2 or 3, a plurality of R33 is the same or different.
When a is 1 or 2, a plurality of R31 is the same or different.
The alkyl group represented by R30 or R31 may be either linear or branched.
In the compound represented by Formula (C1), when Y5 is an oxygen atom, the number of carbon atoms of the alkyl group represented by R30 is preferably in a range of 1 to 20, from the viewpoint of advancing the modification reaction more rapidly. Further, the number of carbon atoms of the alkyl group represented by R30 is more preferably in a range of 1 to 3, and still more preferably 1.
In the compound represented by Formula (C1), when Y5 is a direct bond or sulfur atom, the number of carbon atoms of the alkyl group represented by R30 is preferably in a range of 5 to 20, more preferably in a range of 8 to 20.
In the compound represented by Formula (C1), Y5 is preferably an oxygen atom, from the viewpoint of advancing the modification reaction more rapidly.
In the compound represented by Formula (C2), the number of carbon atoms of the alkyl group represented by each of independent R30 and R32 is preferably in a range of 1 to 20, from the viewpoint of advancing the modification reaction more rapidly. Further, the number of carbon atoms of the alkyl group represented by each of independent R30 and R32 is more preferably in a range of 1 to 3, and still more preferably 1.
In both the compound represented by Formula (C1) and the compound represented by Formula (C2), the number of carbon atoms of the alkyl group represented by R31 is preferably in a range of 1 to 5, more preferably in a range of 1 to 2, and still more preferably 1.
Specific examples of the alkyl group represented by R30, R31, and R32 are the same as those provided as exemplary examples of the alkyl group represented by each of independent R6 to R9.
The number of carbon atoms of the cycloalkyl group represented by R30, R31, or R32 is preferably in a range of 3 to 20, and more preferably in a range of 3 to 11. The number of carbon atoms include the number of carbon atoms in a substituent.
In a case where the hydrogen atoms in the cycloalkyl group represented by R30, R31, and R32 are each independently substituted by an alkyl group, the number of carbon atoms of the cycloalkyl group is 4 or greater. The alkyl group that may substitute the hydrogen atoms of the cycloalkyl group has 1 to 27 carbon atoms.
Specific examples of the cycloalkyl group represented by R30, R31, and R32 are the same as those provided as exemplary examples of the cycloalkyl group represented by each of independent R6 to R9.
The unsaturated hydrocarbon group represented by R30, R31, or R32 may be linear, branched or cyclic.
The number of carbon atoms in the unsaturated hydrocarbon group represented by R30, R31, or R32 is preferably in a range of 5 to 20, and more preferably in a range of 8 to 20.
The unsaturated hydrocarbon group represented by R30, R31, or R32 is preferably an alkenyl group, and more preferably an alkenyl group having 8 to 20 carbon atoms.
As the alkenyl group represented by R30, R31, or R32, a group in which any one single bond (C—C) between carbon atoms is substituted with a double bond (C═C) in the linear or branched alkyl group represented by R6 to R9 is an exemplary example. In the alkenyl group, the position of the double bond is not limited.
Preferred examples of such an alkenyl group include an ethenyl group, a propenyl group, a 3-butenyl group, a 2-butenyl group, a 2-pentenyl group, a 2-hexenyl group, a 2-nonenyl group, a 2-dodecenyl group, and a 9-octadecenyl group.
Each of R30 and R32 is preferably an alkyl group or an unsaturated hydrocarbon group, and more preferably an alkyl group.
R31 is preferably a hydrogen atom, an alkyl group, or an unsaturated hydrocarbon group, and more preferably an alkyl group.
When the alkyl group, cycloalkyl group and unsaturated hydrocarbon group represented by R31 have carbon atoms in a number described above, the compound represented by Formula (C-1) and the compound represented by Formula (C-2) are easily hydrolyzed to form a modified product. Therefore, the modified product of the compound represented by Formula (C1) and the modified product of the compound represented by Formula (C2) easily covers the surface of the semiconductor particles (1). As a result, it is considered that the semiconductor particles (1) are less likely to deteriorate in a thermal environment, and the particles with high durability can be obtained.
Specific examples of the compound represented by the Formula (C1) include tetraethoxysilane, tetramethoxysilane, tetrabutoxysilane, tetrapropoxysilane, tetraisopropoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, trimethoxyphenylsilane, ethoxytriethylsilane, methoxytrimethylsilane, methoxydimethyl (phenyl) silane, pentafluorophenylethoxydimethylsilane, trimethylethoxysilane, 3-chloropropyldimethoxymethylsilane, (3-chloropropyl) diethoxy (methyl) silane, (chloromethyl) dimethoxy (methyl) silane, (chloromethyl) diethoxy (methyl) silane, diethoxydimethylsilane, dimethoxydimethylsilane, dimethoxydiphenylsilane, dimethoxymethylphenylsilane, diethoxydiphenylsilane, dimethoxymethylvinylsilane, diethoxy (methyl) phenylsilane, dimethoxy (methyl) (3,3,3-trifluoropropyl) silane, allyltriethoxysilane, allyltrimethoxysilane, (3-bromopropyl) trimethoxysilane, cyclohexyltrimethoxysilane, (chloromethyl) triethoxysilane, (chloromethyl) trimethoxysilane, dodecyltriethoxysilane, dodecyltrimethoxysilane, triethoxyethylsilane, decyltrimethoxysilane, ethyltrimethoxysilane, hexyltriethoxysilane, hexyltrimethoxysilane, hexadecyltrimethoxysilane, trimethoxy (methyl) silane, triethoxymethylsilane, trimethoxy (1H, 1H, 2H, 2H-heptadecafluorodecyl) silane, triethoxy-1H, 1H, 2H, 2H-tridecafluoro-n-octylsilane, trimethoxy (1H, 1H, 2H, 2H-nonafluorohexyl) silane, trimethoxy (3,3,3-trifluoropropyl) silane, 1H, 1H, 2H, 2H-perfluorooctyltriethoxysilane.
Among them, as the compound represented by Formula (C1), trimethoxyphenylsilane, methoxydimethyl (phenyl) silane, dimethoxydiphenylsilane, dimethoxymethylphenylsilane, cyclohexyltrimethoxysilane, dodecyltriethoxysilane, dodecyltrimethoxysilane, decyltrimethoxysilane, hexyltriethoxysilane, hexyltrimethoxysilane, hexadecyltrimethoxysilane, trimethoxy (1H, 1H, 2H, 2H-heptadecafluorodecyl) silane, triethoxy-1H, 1H, 2H, 2H-tridecafluoro-n-octylsilane, trimethoxy (1H, 1H, 2H, 2H-nonafluorohexyl) silane, trimethoxy (3,3,3-trifluoropropyl) silane, 1H, 1H, 2H, 2H-perfluorooctyltriethoxysilane, tetraethoxysilane, tetramethoxysilane, tetrabutoxysilane, tetraisopropoxysilane are preferable, tetraethoxysilane, tetramethoxysilane, tetrabutoxysilane, and tetraisopropoxysilane are more preferable, and tetramethoxysilane is the most preferable.
Further, the compound represented by Formula (C1) may be dodecyltrimethoxysilane, trimethoxyphenylsilane, 1H, 1H, 2H, 2H-perfluorooctyltriethoxysilane, or trimethoxy (1H, 1H, 2H, 2H-nonafluorohexyl) silane.
In the compound represented by above Formula (C1), the modified product of the compound in which Y5 is a single bond corresponds to the “organic silicon compound having a siloxane bond”.
Further, in the compound represented by above Formula (C1), the modified product of the compound in which Y5 is an oxygen atom or a sulfur atom, and the modified product of the compound represented by Formula (2) correspond to the “inorganic silicon compound having a siloxane bond”.
(3. Modified Product of Compound Represented by Formula (A5-51) and Modified Product of Compound Represented by Formula (A5-52))
The organic silicon compound having a siloxane bond may be a modified product of a compound represented by following Formula (A5-51) or a modified product of a compound represented by Formula (A5-52). That is, the modified product of the compound represented by following Formula (A5-51) and following Formula (A5-52) corresponds to the “organic silicon compound having a siloxane bond”.
In Formula (A5-51) and Formula (A5-52), AC is a divalent hydrocarbon group and Y15 is an oxygen atom or a sulfur atom.
In Formula (A5-51) and Formula (A5-52), R122 and R123 each independently represent a hydrogen atom, an alkyl group, or a cycloalkyl group.
In Formula (A5-51) and Formula (A5-52), R124 represents an alkyl group or a cycloalkyl group.
In Formula (A5-51) and Formula (A5-52), R125 and R126 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group.
When R122 to R126 is an alkyl group, the alkyl group may be either linear or branched. The number of carbon atoms in the alkyl group is typically in a range of 1 to 20, preferably in a range of 5 to 20, and more preferably in a range of 8 to 20.
When R122 to R126 is a cycloalkyl group, the cycloalkyl group may contain an alkyl group as a substituent. The number of carbon atoms in the cycloalkyl group is typically in a range of 3 to 30, preferably in a range of 3 to 20, and more preferably in a range of 3 to 11. The number of carbon atoms include the number of carbon atoms in a substituent.
Hydrogen atoms included in the alkyl group and the cycloalkyl group as R122 to R126 are each independently substituted by or not substituted by a halogen atom or an amino group.
Examples of the halogen atom which may substitute the hydrogen atoms included in the alkyl group and the cycloalkyl group represented by R122 to R126 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
Specific examples of the alkyl group as R122 to R126 are the same as those provided as exemplary examples of the alkyl group represented by each of independent R6 to R9.
Specific examples of the cycloalkyl group as R122 to R126 are the same as those provided as exemplary examples of the cycloalkyl group represented by each of independent R6 to R9.
Examples of the alkoxy group as R125 to R126 include a monovalent group in which the linear or branched alkyl group exemplified as R6 to R9 is bonded to an oxygen atom.
When R125 to R126 are alkoxy groups, examples thereof include a methoxy group, an ethoxy group, and a butoxy group, and a methoxy group is preferable.
The divalent hydrocarbon group represented by AC may be a group obtained by removing two hydrogen atoms from a hydrocarbon compound, and the hydrocarbon compound may be an aliphatic hydrocarbon, an aromatic hydrocarbon or a saturated aliphatic hydrocarbon. When AC is an alkylene group, the alkylene group may be either linear or branched. The number of carbon atoms in the alkylene group is typically in a range of 1 to 100, preferably in a range of 1 to 20, and more preferably in a range of 1 to 5.
Preferable examples of the compound represented by Formula (A5-51) include trimethoxy [3-(methylamino)propyl]silane, 3-aminopropyltriethoxysilane, 3-aminopropyldimethoxymethylsilane, 3-aminopropyldiethoxymethylsilane, and 3-aminopropyltrimethoxysilane.
As the compound represented by Formula (A5-51), a preferable example is a compound represented by Formula (A5-51), in which R122 and R123 are hydrogen atoms, R124 is an alkyl group, and R125 and R126 are alkoxy groups. For example, 3-aminopropyltriethoxysilane and 3-aminopropyltrimethoxysilane are more preferable.
As the compound represented by Formula (A5-51), 3-aminopropyltrimethoxysilane is more preferable.
As the compound represented by Formula (A5-52), 3-mercaptopropyltrimethoxysilane and 3-mercaptopropyltriethoxysilane are more preferable.
(Modified Product of Sodium Silicate)
The inorganic silicon compound having a siloxane bond may be a modified product of sodium silicate (Na2SiO3). That is, the modified product of sodium silicate corresponds to the “inorganic silicon compound having a siloxane bond”.
Sodium silicate is hydrolyzed and modified by treatment with an acid.
The coverage of the coating layer (2) with respect to the surface area of the semiconductor particles (1) of the present embodiment is, for example, preferably in a range of 1 to 100%, more preferably in a range of 5 to 100%, and still more preferably in a range of 30 to 100%.
The coverage of the layer of the organic silicon compound having a siloxane bond with respect to the surface area of the semiconductor particles (1) of the present embodiment is, for example, preferably in a range of 1 to 100%, more preferably in a range of 5 to 100%, and still more preferably in a range of 50 to 100%.
The coverage of the layer of the inorganic silicon compound having a siloxane bond with respect to the surface area of the semiconductor particles (1) of the present embodiment is, for example, preferably in a range of 1 to 100%, more preferably in a range of 3 to 100%, and still more preferably in a range of 10 to 100%.
In the luminescent particles, the coating layer (2) covering the surface of the semiconductor particles (1) can be confirmed, for example, by observing the luminescent particles using a SEM, a TEM, or the like. Further, detailed element distribution of the surface of the luminescent particles can be analyzed by STEM-EDX measurement.
<<Surface Modifier Layer>>
The surface modifier layer has at least one compound or ion as a fabrication material, which is selected from the group consisting of an ammonium ion, an amine, primary to quaternary ammonium cations, an ammonium salt, a carboxylic acid, a carboxylate ion, a carboxylate salt, compounds respectively represented by formulae (X1) to (X6), and salts of the compounds respectively represented by formulae (X2) to (X4).
Among them, the surface modifier layer preferably has at least one compound or ion as a fabrication material, which is selected from the group consisting of an amine, primary to quaternary ammonium cations, an ammonium salt, a carboxylic acid, a carboxylate ion, and a carboxylate salt, and the surface modifier layer more preferably has at least one compound or ion as a fabrication material, which is selected from the group consisting of an amine and a carboxylic acid.
Hereinafter, the fabrication material for the surface modifier layer is sometimes referred to as a “surface modifier”.
The surface modifier is a compound that adsorbs on the surface of the semiconductor particles and acts to stably disperse the semiconductor particles in the composition during the production of the luminescent particles of the present embodiment in the production method described below.
<Ammonium Ion, Primary to Quaternary Ammonium Cations, and Ammonium Salt>
Ammonium ion and primary to quaternary ammonium cations, which are surface modifiers, are represented by following Formula (A1). The ammonium salt, which is a surface modifier, is a salt containing an ion represented by following Formula (A1).
In ion represented by Formula (A1), each of R1 to R4 independently represents a hydrogen atom or a monovalent hydrocarbon group.
The hydrocarbon group represented by each of R1 to R4 may be a saturated hydrocarbon group or an unsaturated hydrocarbon group. Examples of the saturated hydrocarbon group include an alkyl group and cycloalkyl group.
The alkyl group represented by each of R1 to R4 may be either linear or branched.
The number of carbon atoms in the alkyl group represented by each of R1 to R4 is typically in a range of 1 to 20, preferably in a range of 5 to 20, and still more preferably in a range of 8 to 20.
The number of carbon atoms in the cycloalkyl group is typically in a range of 3 to 30, preferably in a range of 3 to 20, and more preferably in a range of 3 to 11. The number of carbon atoms include the number of carbon atoms in a substituent.
The unsaturated hydrocarbon group represented by each of R1 to R4 may be either linear or branched.
The number of carbon atoms in the unsaturated hydrocarbon group represented by each of R1 to R4 is typically in a range of 2 to 20, preferably in a range of 5 to 20, and more preferably in a range of 8 to 20.
It is preferable that each of R1 to R4 represents a hydrogen atom, an alkyl group or an unsaturated hydrocarbon group.
As the unsaturated hydrocarbon group, an alkenyl group is preferable. Each of R1 to R4 is preferably an alkenyl group having 8 to 20 carbon atoms.
Specific examples of the alkyl group as R1 to R4 are the same as those provided as exemplary examples of the alkyl group represented by each of independent R6 to R9.
Specific examples of the cycloalkyl group as R1 to R4 are the same as those provided as exemplary examples of the cycloalkyl group represented by each of independent R6 to R9.
As the alkenyl group represented by each of R1 to R4, a group in which any one single bond (C—C) between carbon atoms is substituted with a double bond (C═C) in the linear or branched alkyl group as R6 to R9 is an exemplary example, and the position of the double bond is not limited.
Preferred examples of the alkenyl group represented by each of R1 to R4 include an ethenyl group, a propenyl group, a 3-butenyl group, a 2-butenyl group, a 2-pentenyl group, a 2-hexenyl group, a 2-nonenyl group, a 2-dodecenyl group, and a 9-octadecenyl group.
In a case where the ammonium cation represented by Formula (A1) forms a salt, the counter anion is not particularly limited. As the counter anion, halide ion and carboxylate ion are preferable. Examples of the halide ion include bromide ion, chloride ion, iodide ion, and fluoride ion.
Preferred examples of the ammonium salt containing the ammonium cation represented by Formula (A1) and a counter anion include an n-octylammonium salt and an oleyl ammonium salt.
<Amine>
The amine as the surface modifier can be represented by following Formula (A11).
In Formula (A11), R1 to R3 represent the same groups as R1 to R3 included in Formula (A1). However, at least one of R1 to R3 is a monovalent hydrocarbon group.
The amine as the surface modifier may be any of primary to tertiary amines, but primary amine and secondary amine are preferable, and primary amine is more preferable.
As the amine which is a surface modifier, oleylamine is preferable.
<Carboxylic Acid, Carboxylate Ion, and Carboxylate Salt>
The carboxylate ion, which is a surface modifier, is represented by following Formula (A2). The carboxylate salt, which is a surface modifier, is a salt containing an ion represented by following Formula (A2).
R5—CO2− (A2)
Examples of the carboxylic acid as a surface modifier include a carboxylic acid in which a proton (H+) is bonded to the carboxylate anion represented by Formula (A2).
In the ion represented by Formula (A2), R5 represents a monovalent hydrocarbon group. The hydrocarbon group represented by R5 may be a saturated hydrocarbon group or an unsaturated hydrocarbon group.
Examples of the saturated hydrocarbon group include an alkyl group and a cycloalkyl group.
The alkyl group represented by R5 may be either linear or branched.
The number of carbon atoms in the alkyl group represented by R5 is typically in a range of 1 to 20, preferably in a range of 5 to 20, and still more preferably in a range of 8 to 20.
The number of carbon atoms in the cycloalkyl group is typically in a range of 3 to 30, preferably in a range of 3 to 20, and more preferably in a range of 3 to 11. The number of carbon atoms include the number of carbon atoms in a substituent.
The unsaturated hydrocarbon group as R5 may be linear or branched.
The number of carbon atoms in the unsaturated hydrocarbon group as R5 is typically in a range of 2 to 20, preferably in a range of 5 to 20, and more preferably in a range of 8 to 20.
It is preferable that R5 represents an alkyl group or an unsaturated hydrocarbon group. As the unsaturated hydrocarbon group, an alkenyl group is preferable.
Specific examples of the alkyl group as R5 include those provided as exemplary examples of the alkyl group represented by R6 to R9.
Specific examples of the cycloalkyl group as R5 include those provided as exemplary examples of the cycloalkyl group represented by R6 to R9.
Specific examples of the alkenyl group as R5 include those provided as exemplary examples of the alkenyl group represented by R1 to R4.
As the carboxylate anion represented by Formula (A2), an oleate anion is preferable.
When the carboxylate anion forms a salt, the counter cation of the carboxylate anion is not particularly limited, and preferred examples thereof include an alkali metal cation, an alkaline earth metal cation, and an ammonium cation.
As the carboxylic acid which is a surface modifier, oleic acid is preferable.
<Compound Represented by Formula (X1)>
In the compound (salt) represented by Formula (X1), each of R18 to R21 is independently an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, or an aryl group having 6 to 30 carbon atoms which may have a substituent.
The alkyl group represented by each of R18 to R21 may be either linear or branched.
The alkyl group represented by each of R18 to R21 preferably has an aryl group as a substituent. The number of carbon atoms in the alkyl group represented by each of R18 to R21 is typically in a range of 1 to 20, preferably in a range of 5 to 20, and still more preferably in a range of 8 to 20. The number of carbon atoms include the number of carbon atoms in a substituent.
The cycloalkyl group represented by each of R18 to R21 preferably has an aryl group as a substituent. The number of carbon atoms in the cycloalkyl group represented by each of R18 to R21 is typically in a range of 3 to 30, preferably in a range of 3 to 20, and still more preferably in a range of 3 to 11. The number of carbon atoms include the number of carbon atoms in a substituent.
The aryl group represented by each of R18 to R21 preferably has an alkyl group as a substituent. The number of carbon atoms in the aryl group represented by each of R18 to R21 is typically in a range of 6 to 30, preferably in a range of 6 to 20, and still more preferably in a range of 6 to 10. The number of carbon atoms include the number of carbon atoms in a substituent.
As the group represented by each of R18 to R21, an alkyl group is preferable.
Specific examples of the alkyl group as R18 to R21 are the same as those provided as exemplary examples of the alkyl group represented by each of independent R6 to R9.
Specific examples of the cycloalkyl group as R18 to R21 are the same as those provided as exemplary examples of the cycloalkyl group represented by each of independent R6 to R9.
Specific examples of the aryl group as R18 to R21 include a phenyl group, a benzyl group, a tolyl group, and an o-xysilyl group.
Hydrogen atoms included in the group as R18 to R21 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom. Since the compound substituted with a halogen atom has high chemical stability, a fluorine atom is preferable as the halogen atom to be substituted.
In the compound represented by Formula (X1), M− represents a counter anion. As the counter anion, a halide ion, a carboxylate ion, or the like is preferable. Examples of the halide ion include bromide ion, chloride ion, iodide ion, and fluoride ion, and bromide ion is preferable.
Specific examples of the compound represented by Formula (X1) include tetraethylphosphonium chloride, tetraethylphosphonium bromide, tetraethylphosphonium iodide; tetrabutylphosphonium chloride, tetrabutylphosphonium bromide, tetrabutylphosphonium iodide: tetraphenylphosphonium chloride, tetraphenylphosphonium bromide, tetraphenylphosphonium iodide; tetra-n-octylphosphonium chloride, tetra-n-octylphosphonium bromide, tetra-n-octylphosphonium iodide; tributyl-n-octylphosphonium bromide; tributyldodecylphosphonium bromide; tributylhexadecylphosphonium chloride, tributylhexadecylphosphonium bromide, and tributylhexadecylphosphonium iodide.
Since the thermal durability of the luminescent particles can be expected to increase, as the compound represented by Formula (X1), tributylhexadecylphosphonium bromide and tributyl-n-octylphosphonium bromide are preferable, and tributyl-n-octylphosphonium bromide is more preferable.
<Compound Represented by Formula (X2) and Salt of Compound Represented by Formula (X2)>
In the compound represented by Formula (X2), A1 represents a single bond or an oxygen atom.
In the compound represented by Formula (X2), R22 represents an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, or an aryl group having 6 to 30 carbon atoms which may have a substituent.
The alkyl group represented by R22 may be either linear or branched.
As the alkyl group represented by R22, the same group as the alkyl group represented by R18 to R21 can be employed.
As the cycloalkyl group represented by R22, the same group as the cycloalkyl group represented by R18 to R21 can be employed.
As the aryl group represented by R22, the same group as the aryl group represented by R18 to R21 can be employed.
The group represented by R22 is preferably an alkyl group.
Hydrogen atoms included in the group as R22 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
In the salt of the compound represented by Formula (X2), the anionic group is represented by following Formula (X2-1).
In the salt of the compound represented by Formula (X2), examples of the counter cation paired with Formula (X2-1) include ammonium ion.
In the salt of the compound represented by Formula (X2), the counter cation paired with the formula (X2-1) is not particularly limited, and examples thereof include monovalent ions such as Na+, K+, and Cs+.
Examples of the compound represented by Formula (X2) and the salt of the compound represented by Formula (X2) include phenyl phosphate, phenyl disodium phosphate hydrate, 1-naphthyl disodium phosphate hydrate, 1-monosodium naphthyl phosphate monohydrate, lauryl phosphate, sodium lauryl phosphate, oleyl phosphate, benzhydrylphosphonic acid, decylphosphonic acid, dodecylphosphonic acid, ethylphosphonic acid, hexadecylphosphonic acid, heptylphosphonic acid, hexylphosphonic acid, methylphosphonic acid, nonylphosphonic acid, octadecylphosphonic acid, n-octylphosphonic acid, benzenephosphonic acid, disodium phenylphosphonate hydrate, phenethylphosphonic acid, propylphosphonic acid, undecylphosphonic acid, tetradecylphosphonic acid, and cinnamylphosphonic acid.
Since the thermal durability of the luminescent particles can be expected to increase, as the compound represented by Formula (X2), oleylphosphoric acid, dodecylphosphonic acid, ethylphosphonic acid, hexadecylphosphonic acid, heptylphosphonic acid, and hexylphosphonic acid, methylphosphonic acid, nonylphosphonic acid, octadecylphosphonic acid, n-octylphosphonic acid are more preferable, and octadecylphosphonic acid is still more preferable.
<Compound Represented by Formula (X3) and Salt of Compound Represented by Formula (X3)>
In the compound represented by Formula (X3), each of A2 and A3 independently represents a single bond or an oxygen atom.
In the compound represented by Formula (X3), each of R23 and R24 independently represents an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, or an aryl group having 6 to 30 carbon atoms which may have a substituent.
The alkyl group represented by each of R23 and R24 may be independently either linear or branched.
As the alkyl group represented by each of R23 and R24, the same group as the alkyl group represented by R18 to R21 can be employed.
As the cycloalkyl group represented by each of R23 and R24, the same group as the cycloalkyl group represented by R18 to R21 can be employed.
As the aryl group represented by each of R23 and R24, the same group as the aryl group represented by R18 to R21 can be employed.
It is preferable that each of R23 and R24 is independently an alkyl group.
Hydrogen atoms included in the group as R23 to R24 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
In the salt of the compound represented by Formula (X3), the anionic group is represented by following Formula (X3-1).
In the salt of the compound represented by Formula (X3), examples of the counter cation paired with Formula (X3-1) include ammonium ion.
In the salt of the compound represented by Formula (X3), the counter cation paired with the formula (X3-1) is not particularly limited, and examples thereof include monovalent ions such as Na+, K+, and Cs+.
Examples of the compound represented by Formula (X3) include diphenylphosphinic acid, dibutyl phosphate, didecyl phosphate, and diphenyl phosphate. Examples of the salt of the compound represented by Formula (X3) include the salt of the above compound.
Since the thermal durability of the luminescent particles can be expected to increase, diphenylphosphinic acid, dibutyl phosphate, and didecyl phosphate are preferable, and diphenylphosphinic acid and salts thereof are more preferable.
<Compound Represented by Formula (X4) and Salt of Compound Represented by Formula (X4)>
In the compound represented by Formula (X4), A4 represents a single bond or an oxygen atom.
In the compound represented by Formula (X4), R25 represents an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, or an aryl group having 6 to 30 carbon atoms which may have a substituent.
As the alkyl group represented by R25, the same group as the alkyl group represented by R18 to R21 can be employed.
As the cycloalkyl group represented by R25, the same group as the cycloalkyl group represented by R18 to R21 can be employed.
As the aryl group represented by R25, the same group as the aryl group represented by R18 to R21 can be employed.
It is preferable that R25 is an alkyl group.
Hydrogen atoms included in the group as R25 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
Examples of the compound represented by Formula (X4) include 1-octane sulfonic acid, 1-decane sulfonic acid, 1-dodecane sulfonic acid, hexadecyl sulfate, lauryl sulfate, myristyl sulfate, laureth sulfate, and dodecyl sulfate.
In the salt of the compound represented by Formula (X4), the anionic group is represented by following Formula (X4-1).
In the salt of the compound represented by Formula (X4), examples of the counter cation paired with Formula (X4-1) include ammonium ion.
In the salt of the compound represented by Formula (X4), the counter cation paired with the formula (X4-1) is not particularly limited, and examples thereof include monovalent ions such as Na+, K+, and Cs+.
Examples of the salt of the compound represented by Formula (X4) include sodium 1-octane sulfonate, sodium 1-decane sulfonate, sodium 1-dodecane sulfonate, sodium hexadecyl sulfate, sodium lauryl sulfate, sodium myristyl sulfate, sodium laureth sulfate, and sodium dodecyl sulfate.
Since the thermal durability of the luminescent particles can be expected to increase, sodium hexadecyl sulfate and sodium dodecyl sulfate are preferable, and sodium dodecyl sulfate is more preferable.
<Compound Represented by Formula (X5)>
In the compound represented by Formula (X5), each of A5 to A7 independently represents a single bond or an oxygen atom.
In the compound represented by Formula (X5), each of R26 to R28 independently represents an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, an alkenyl group having 2 to 20 carbon atoms which may have a substituent, or an alkynyl group having 2 to 20 carbon atoms which may have a substituent.
The alkyl group represented by each of R26 to R28 may be independently either linear or branched.
As the alkyl group represented by each of R26 to R28, the same group as the alkyl group represented by R18 to R21 can be employed.
As the cycloalkyl group represented by each of R26 to R28, the same group as the cycloalkyl group represented by R18 to R21 can be employed.
As the aryl group represented by each of R26 to R28, the same group as the aryl group represented by R18 to R21 can be employed.
It is preferable that the alkenyl group represented by each of R26 to R28 independently has an alkyl group or an aryl group as a substituent. The number of carbon atoms in the alkenyl group represented by each of R26 to R28 is typically in a range of 2 to 20, preferably in a range of 6 to 20, and still more preferably in a range of 12 to 18. The number of carbon atoms include the number of carbon atoms in a substituent.
It is preferable that the alkynyl group represented by each of R26 to R28 independently has an alkyl group or an aryl group as a substituent. The number of carbon atoms in the alkynyl group represented by each of R26 to R28 is typically in a range of 2 to 20, preferably in a range of 6 to 20, and still more preferably in a range of 12 to 18. The number of carbon atoms include the number of carbon atoms in a substituent.
It is preferable that each of R26 to R28 is independently an alkyl group.
Specific examples of the alkenyl group represented by each of R26 to R28 include a hexenyl group, an octenyl group, a decenyl group, a dodecenyl group, a tetradecenyl group, a hexadecenyl group, an octadecenyl group, and an icosenyl group.
Specific examples of the alkynyl group represented by each of R26 to R28 include a hexynyl group, an octynyl group, a decynyl group, a dodecinyl group, a tetradecynyl group, a hexadecynyl group, an octadecynyl group, and an icocinyl group.
Hydrogen atoms included in the group as R26 to R28 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
Examples of the compound represented by Formula (X5) include trioleyl phosphine, tributyl phosphine, triethyl phosphine, trihexyl phosphite, triisodecyl phosphine, trimethyl phosphine, cyclohexyldiphenyl phosphine, and di-tert-butylphenyl phosphine, dicyclohexylphenyl phosphine, diethylphenyl phosphine, tributyl phosphine, tri-tert-butyl phosphine, trihexyl phosphine, trimethyl phosphine, tri-n-octyl phosphine, and triphenyl phosphine.
Since the thermal durability of the luminescent particles can be expected to increase, trioleyl phosphite, tributyl phosphine, trihexyl phosphine, trihexyl phosphite are preferable, and trioleyl phosphite is more preferable.
<Compound Represented by Formula (X6)>
In the compound represented by Formula (X6), each of A8 to A10 independently represents a single bond or an oxygen atom.
In the compound represented by Formula (X6), each of R29 to R31 independently represents an alkyl group having 1 to 20 carbon atoms which may have a substituent, a cycloalkyl group having 3 to 30 carbon atoms which may have a substituent, an aryl group having 6 to 30 carbon atoms which may have a substituent, an alkenyl group having 2 to 20 carbon atoms which may have a substituent, or an alkynyl group having 2 to 20 carbon atoms which may have a substituent.
The alkyl group represented by each of R29 to R31 may be independently either linear or branched.
As the alkyl group represented by each of R29 to R31, the same group as the alkyl group represented by R18 to R21 can be employed.
As the cycloalkyl group represented by each of R29 to R31, the same group as the cycloalkyl group represented by R18 to R21 can be employed.
As the aryl group represented by each of R29 to R31, the same group as the aryl group represented by R18 to R21 can be employed.
As the alkenyl group represented by each of R29 to R31, the same group as the alkenyl group represented by R26 to R28 can be employed.
As the alkynyl group represented by each of R29 to R31, the same group as the alkynyl group represented by R26 to R28 can be employed.
It is preferable that each of R29 to R31 is independently an alkyl group.
Hydrogen atoms included in the group as R29 to R31 are each independently substituted by or not substituted by a halogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, among which a fluorine atom is preferable due to its high chemical stability.
Examples of the compound represented by Formula (X6) include tri-n-octylphosphine oxide, tributylphosphine oxide, methyl (diphenyl) phosphine oxide, triphenylphosphine oxide, tri-p-tolylphosphine oxide, cyclohexyldiphenylphosphine oxide, trimethyl phosphate, tributyl phosphate, triamyl phosphate, tris(2-butoxyethyl) phosphate, triphenyl phosphate, tri-p-cresyl phosphate, tri-m-cresyl phosphate, tri-o-cresyl phosphate.
Since the thermal durability of the luminescent particles can be expected to increase, tri-n-octylphosphine oxide and tributylphosphine oxide are preferable, and tri-n-octylphosphine oxide is more preferable.
Among the above-mentioned surface modifiers, ammonium salt, ammonium ion, primary to quaternary ammonium cations, carboxylate salt, and carboxylate ion are preferable.
Among the ammonium salts and ammonium ions, oleylamine salt and oleylammonium ion are more preferable.
Among the carboxylate salts and carboxylate ions, oleate and oleate cation are more preferable.
In the particles of the present embodiment, one kind of the surface modifier may be used alone, or two or more kinds of the surface modifier may be used in combination.
<Regarding Compounding Ratio of Each Component>
In the luminescent particles of the present embodiment, the compounding ratio of the semiconductor particles (1) and the coating layer (2) can be appropriately determined according to the type of the semiconductor particles (1) and the coating layer (2).
In the luminescent particles of the present embodiment, in a case where the semiconductor particles (1) are particles of the perovskite compound, the molar ratio [Si/B] of the Si element in the coating layer (2) to the metal ion serving as the component B in the perovskite compound may be in a range of 0.001 to 500, in a range of 0.01 to 300, or in a range of 1 to 100.
In the luminescent particles of the present embodiment, in a case where the material for forming the coating layer (2) is the modified product of silazane represented by Formula (B1) or (B2), the molar ratio [Si/B] of Si in the modified product to the metal ion serving as the component B in the perovskite compound may be in a range of 0.001 to 500, in a range of 0.001 to 300, or in a range of 1 to 100.
In the luminescent particles of the present embodiment, in a case where the coating layer (2) is the modified product of polysilazane having a constituent unit which is represented by Formula (B3), the molar ratio [Si/B] of the Si element in the modified product to the metal ion serving as the component B in the perovskite compound may be in a range of 0.001 to 500, in a range of 0.01 to 300, in a range of 0.1 to 200, in a range of 1 to 100, or in a range of 1 to 80.
From the viewpoint of satisfactorily exhibiting the excellent effect of improving durability with respect to light by the coating layer (2), it is preferable that the compounding ratio between the semiconductor particles (1) and the coating layer (2) is in the above-described range.
In the luminescent particles of the present embodiment, in a case where the organic silicon compound having a siloxane bond in the coating layer (2) is the modified product of silazane, the molar ratio [Si/B] of Si element in the modified product to the metal ion serving as the component B in the perovskite compound may be in a range of 0.001 to 500, in a range of 0.01 to 300, in a range of 0.1 to 200, in a range of 1 to 100, or in a range of 1 to 80.
In the luminescent particles of the present embodiment, in a case where the inorganic silicon compound having a siloxane bond in the coating layer (2) is the modified product of silazane, the molar ratio [Si/B] of Si element in the modified product to the metal ion serving as the component B in the perovskite compound may be in a range of 0.0001 to 500, in a range of 0.001 to 100, in a range of 0.01 to 20, in a range of 1.0 to 10, in a range of 1.0 to 5, or in a range of 1.0 to 3.5.
From the viewpoint of satisfactorily exhibiting the excellent effect of improving durability with respect to light by the coating layer (2), it is preferable that the compounding ratio between the semiconductor particles (1) and the coating layer (2) is in the above-described range.
The molar ratio [Si/B] of the Si element in the modified product to the metal ion serving as the component B of the perovskite compound can be determined by the following method.
The amount of substance (B) (unit: mol) of the metal ions as the component B of the perovskite compound is determined by measuring the mass of the metal as the B component by inductively coupled plasma mass spectrometry (ICP-MS), and converting the measured value to the amount of substance.
The amount of substance (Si) of the Si element of the modified product is determined from the value obtained by converting the mass of the raw material compounds of the modified product used into the molar amount and the amount of Si (amount of substance) contained per unit mass of the raw material compounds. The unit mass of the raw material compounds is the molecular weight of the raw material compound if the raw material compound is a low molecular weight compound, and is the molecular weight of the repeating unit of the raw material compound if the raw material compound is a high molecular weight compound.
The molar ratio [Si/B] can be calculated from the amount of substance (Si) of the Si element and the amount of substance (B) of the metal ions as the B component of the perovskite compound.
In the luminescent particles of the present embodiment, the amount of the coating layer (2) with respect to the amount of the semiconductor particles (1) is not particularly limited. In the luminescent particles of the present embodiment, from the viewpoint of sufficiently improving the durability, the amount of the coating layer (2) may be 0.1 part by mass or greater and 100 parts by mass or less with respect to 1 part by mass of the semiconductor particles (1). From the viewpoint of further improving the durability, the amount of the coating layer (2) is preferably 1.5 pats by mass or greater and 40 parts by mass or less, more preferably 1.9 parts by mass or greater and 20 parts by mass or less, with respect to 1 part by mass of the semiconductor particles (1).
According to the luminescent particles having the above described configurations, it is possible to provide luminescent particles having high durability with respect to light.
<<Composition>>
The composition of the present embodiment contains the above described luminescent particles, and at least one selected from the group consisting of a solvent (3), a polymerizable compound (4), and a polymer (4-1).
Further, in a case where the composition of the present embodiment contains the above described luminescent particles and the polymer (4-1), the total amount of the luminescent particles and the polymer (4-1) is preferably 90% by mass or greater with respect to the total mass of the composition.
In the composition of the present embodiment, one kind of the above described luminescent particles may be used alone, or two or more kinds thereof may be used in combination.
In the following description, solvent (3), polymerizable compound (4), and polymer (4) are sometimes collectively referred to as “dispersion medium”. The composition of the present embodiment may be dispersed in these dispersion media.
In the present specification, the term “dispersed” indicates a state in which the luminescent particles of the present embodiment are floated or a state in which the luminescent particles of the present embodiment are suspended in a dispersion medium.
When the luminescent particles are dispersed in the dispersion medium, a part of the luminescent particles may be precipitated.
<<(3) Solvent>>
The solvent contained in the composition of the present embodiment is not particularly limited as long as the solvent is a medium in which the luminescent particles of the present embodiment can be dispersed. Further, a solvent contained in the composition of the present embodiment in which the luminescent particles of the present embodiment are unlikely to be dissolved is preferable.
In the present specification, the “solvent” indicates a substance that enters a liquid state at 25° C. and 1 atm. However, the solvent does not include the polymerizable compound and the polymer described below.
Examples of such a solvent include the following (a) to (k).
(a): an ester
(b): a ketone
(c): an ether
(d): an alcohol
(e): glycol ether
(f): an organic solvent having an amide group
(g): an organic solvent having a nitrile group
(h): an organic solvent having a carbonate group
(i): a halogenated hydrocarbon
(j): a hydrocarbon
(k): dimethyl sulfoxide
Examples of the ester (a) include methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate.
Examples of the ketone (b) include y-butyrolactone, N-methyl-2-pyrrolidone, acetone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone.
Examples of the ether (c) include diethyl ether, methyl-tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1,4-dioxane, 1,3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole.
Examples of the alcohol (d) include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2,2-trifluoroethanol, and 2,2,3,3-tetrafluoro-1-propanol.
Examples of the glycol ether (e) include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether.
Examples of the organic solvent (0 containing an amide group include, N,N-dimethylformamide, acetamide, and N,N-dimethylacetamide.
Examples of the organic solvent (g) having a nitrile group include acetonitrile, isobutyronitrile, propionitrile, and methoxy acetonitrile.
Examples of the organic solvent (h) having a carbonate group include ethylene carbonate and propylene carbonate.
Examples of the halogenated hydrocarbon (i) include methylene chloride and chloroform.
Examples of the hydrocarbon (j) include n-pentane, cyclohexane, n-hexane, 1-octadecene, benzene, toluene, xylene.
Among these solvents, an ester (a), a ketone (b), an ether (c), an organic solvent (g) having a nitrile group, an organic solvent (h) having a carbonate group, a halogenated hydrocarbon (i), and a hydrocarbon (j) are preferable, because these have a low polarity and are considered to be unlikely to dissolve the luminescent particles of the present embodiment.
Further, as the solvent used in the composition of the present embodiment, a halogenated hydrocarbon (i) and hydrocarbon (j) are more preferable.
In the composition of the present embodiment, one type of the above described solvent may be used alone, or two or more types of the solvents may be used in combination.
<<(4) Polymerizable Compound>>
As the polymerizable compound contained in the composition according to the present embodiment, a polymerizable compound in which the luminescent particles of the present embodiment are unlikely to be dissolved at the temperature at which the composition according to the present embodiment is produced is preferable.
In the present specification, the “polymerizable compound” indicates a monomer compound (monomer) containing a polymerizable group. For example, the polymerizable compound is a monomer that enters a liquid state at 25° C. and 1 atm.
For example, in a case where the composition is produced at room temperature under normal pressure, the polymerizable compound is not particularly limited. Examples of the polymerizable compound include known polymerizable compounds such as styrene, acrylic acid ester, methacrylic acid ester, and acrylonitrile. Among these, any one or both of acrylic acid ester and methacrylic acid ester serving as a monomer of an acrylic resin are preferable as the polymerizable compound.
In the composition of the present embodiment, one type of the polymerizable compound may be used alone, or two or more types of the polymerizable compounds may be used in combination.
In the composition of the present embodiment, the ratio of the total amount of the acrylic acid ester and the methacrylic acid ester with respect to all the polymerizable compound (4) may be 10 mol % or greater. The ratio may be 30 mol % or greater, 50 mol % or greater, 80 mol % or greater, or 100 mol %.
<<(4-1) Polymer>>
As the polymer contained in the composition of the present embodiment, a polymer with a low solubility of the luminescent particles of the present embodiment at the temperature at which the composition according to the present embodiment is produced is preferable.
For example, in a case where the composition is produced at room temperature under normal pressure, the polymer is not particularly limited, and examples thereof include known polymers such as polystyrene, acrylic resins, and epoxy resins. Among these, an acrylic resin is preferable as the polymer. The acrylic resin has one or both of a constitutional unit derived from acrylic acid ester and a constitutional unit derived from methacrylic acid ester.
In the composition of the present embodiment, the ratio of the total amount of the constitutional unit derived from the acrylic acid ester and the constitutional unit derived from the methacrylic acid ester with respect to the amount of all constitutional units contained in the polymer (4-1) may be 10 mol % or greater. The ratio may be 30 mol % or greater, 50 mol % or greater, 80 mol % or greater, or 100 mol %.
The weight-average molecular weight of the polymer (4-1) is preferably in a range of 100 to 1200000, more preferably in a range of 1000 to 800000, and still more preferably in a range of 5000 to 150000.
In the present specification, the “weight average molecular weight” indicates a value in terms of polystyrene to be measured according to a gel permeation chromatography (GPC) method.
In the composition of the present embodiment, one type of the above described polymer may be used alone, or two or more types of the polymers may be used in combination.
<Regarding Compounding Ratio of Each Component>
In the composition containing the luminescent particles and the dispersion medium, the amount of the luminescent particles with respect to the total mass of the composition is not particularly limited.
The amount of the luminescent particles with respect to the total mass of the composition is preferably 90% by mass or less, more preferably 40% by mass or less, still more preferably 10% by mass or less, and even still more preferably 3% by mass of less, from the viewpoint of preventing the concentration quenching.
Further, the amount of the luminescent particles with respect to the total mass of the composition is preferably 0.0002% by mass or greater, more preferably 0.002% by mass or greater, still more preferably 0.01% by mass or greater, from the viewpoint of obtaining an excellent quantum yield.
The above-described upper limit values and lower limit values can be arbitrarily combined.
The amount of the luminescent particles with respect to the total mass of the composition is typically in a range of 0.0002% to 90% by mass.
The amount of the luminescent particles with respect to the total mass of the composition is preferably in a range of 0.001% to 40% by mass, more preferably in a range of 0.002% to 10% by mass, and still more preferably in a range of 0.01% to 3% by mass.
From the viewpoints of making the semiconductor particles (1) difficult to aggregate and exhibiting an excellent light-emitting property, a composition in which the amount of the luminescent particles with respect to the total mass of the composition is in the above-described range is preferable.
Further, in the composition, total amount ratio of the luminescent particles and dispersion medium may be 90% by mass or greater, 95% by mass or greater, 99% by mass or greater, and 100% by mass, with respect to the total mass of the composition.
In the composition, the mass ratio of the luminescent particles to dispersion medium [luminescent particles/dispersion medium] may be 0.00001 to 20, 0.0001 to 10, or 0.0005 to 3.
From the viewpoints of making the luminescent particles difficult to aggregate and exhibiting an excellent light-emitting property, it is preferable that the compounding ratio between the luminescent particles and the dispersion medium is in the above-described range.
The composition according to the present embodiment may further include components (hereinafter, referred to as “other components”) other than the above described luminescent particles, the solvent (3), the polymerizable compound (4), and the polymer (4-1).
Examples of other components include a compound having an amorphous structure formed of a small amount of impurities and an element component constituting the semiconductor particles (1), and a polymerization initiator.
The amount of other components is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 1% by mass or less with respect to the total mass of the composition.
As a polymer (4-1) contained in the composition according to the present embodiment, the above-described polymer (4-1) can be employed.
In the composition according to the present embodiment, it is preferable that the luminescent particles are dispersed in the polymer (4-1).
In the composition, the compounding ratio between the luminescent particles and the polymer (4-1) may be such that the luminescent particles satisfactorily exhibit a light-emitting effect. The compounding ratio can be appropriately determined depending on the types of luminescent particles and polymer (4-1).
In the composition, the amount of the luminescent particles with respect to the total mass of the composition is not particularly limited. The amount of the luminescent particles with respect to the total mass of the composition is preferably 90% by mass or less, more preferably 40% by mass or less, still more preferably 10% by mass or less, and even still more preferably 3% by mass of less, from the viewpoint of preventing the concentration quenching.
The amount of the luminescent particles with respect to the total mass of the composition is preferably 0.0002% by mass or greater, more preferably 0.002% by mass or greater, still more preferably 0.01% by mass or greater, from the viewpoint of obtaining an excellent quantum yield.
The above-described upper limit values and lower limit values can be arbitrarily combined.
The amount of the luminescent particles with respect to the total mass of the composition is typically in a range of 0.0001% to 30% by mass.
The amount of the luminescent particles with respect to the total mass of the composition is preferably in a range of 0.0001% to 20% by mass, more preferably in a range of 0.0005% to 10% by mass, and still more preferably in a range of 0.001% to 3% by mass.
In the composition, the mass ratio of the luminescent particles to the polymer (4-1) [luminescent particles/polymer (4-1)] may be 0.00001 to 20, 0.0001 to 10, or 0.0005 to 3.
From the viewpoint of exhibiting an excellent light-emitting property, it is preferable that the compounding ratio between the luminescent particles and the polymer (4-1) is in the above-described range.
In the composition of the present embodiment, for example, the total amount of the luminescent particles and the polymer (4-1) is 90% by mass or greater with respect to the total mass of the composition. The total amount of the luminescent particles and the polymer (4-1) may be 95% by mass or greater, 99% by mass or greater, or 100% by mass, with respect to the total mass of the composition.
The composition of the present embodiment may contain the same components as the other components described above. The amount of the other components is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 1% by mass or less, with respect to the total mass of the composition.
<<Production Method for Luminescent Particles>>
The above described luminescent particles can be produced by producing semiconductor particles (1) and then forming the coating layer (2) on the surface of the semiconductor particles (1).
<Production Method for Semiconductor Particles (1)>
(Production Method for Semiconductor Particles (i) to (vii))
The semiconductor particles (i) to (vii) can be produced by a method of heating a mixed solution of a simple substance of an element constituting a semiconductor particles or a compound of an element constituting a semiconductor particles, and a fat-soluble solvent.
The compound of an element constituting the semiconductor particles is not particularly limited, and examples thereof include an oxide, an acetate, an organometallic compound, a halide, and a nitrate.
Examples of the fat-soluble solvent include a nitrogen-containing compound which contains a hydrocarbon group having 4 to 20 carbon atoms and an oxygen-containing compound which contains a hydrocarbon group having 4 to 20 carbon atoms.
Examples of the hydrocarbon group having 4 to 20 carbon atoms include a saturated aliphatic hydrocarbon group, an unsaturated aliphatic hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group.
Examples of the saturated aliphatic hydrocarbon group having 4 to 20 carbon atoms include an n-butyl group, an isobutyl group, an n-pentyl group, an octyl group, a decyl group, a dodecyl group, a hexadecyl group and an octadecyl group.
Examples of the unsaturated aliphatic hydrocarbon group having 4 to 20 carbon atoms include an oleyl group.
Examples of the alicyclic hydrocarbon group having 4 to 20 carbon atoms include a cyclopentyl group and a cyclohexyl group.
Examples of the aromatic hydrocarbon group having 4 to 20 carbon atoms include a phenyl group, a benzyl group, a naphthyl group, and a naphthylmethyl group.
As the hydrocarbon group having 4 to 20 carbon atoms, a saturated aliphatic hydrocarbon group and an unsaturated aliphatic hydrocarbon group are preferable.
Examples of the nitrogen-containing compound include amines and amides.
Examples of the oxygen-containing compound include fatty acids.
Among such fat-soluble solvents, a nitrogen-containing compound having a hydrocarbon group having 4 to 20 carbon atoms is preferable. Preferred examples of such nitrogen-containing compounds include alkylamines such as n-butylamine, isobutylamine, n-pentylamine, n-hexylamine, octylamine, decylamine, dodecylamine, hexadecylamine, and octadecylamine, and. alkenylamines such as oleylamine.
Such a fat-soluble solvent can be bonded to the surface of the semiconductor particles produced by synthesis. Examples of the type of bond when the fat-soluble solvent is bonded to the surface of the semiconductor particles include chemical bonds such as a covalent bond, an ionic bond, a coordination bond, a hydrogen bond, and a van der Waals bond.
The heating temperature of the mixed solution may be appropriately set depending on the kind of raw material (simple substance or compound) to be used. For example, it is preferable that the heating temperature thereof is set to be in a range of 130° C. to 300° C. and more preferable that the heating temperature thereof is set to be in a range of 240° C. to 300° C. From the viewpoint of easily unifying the crystal structure, it is preferable that the heating temperature is higher than or equal to the above-described lower limit. Since the crystal structure of the resulting semiconductor particles is less likely to collapse and the desired product can be easily obtained, it is preferable that the heating temperature is less than or equal to the above-described upper limit.
The heating time may be appropriately set depending on the kind of raw material (simple substance or compound) to be used and the heating temperature. For example, it is preferable that the heating time is set to be in a range of several seconds to several hours and more preferable that the heating time is set to be in a range of 1 minute to 60 minutes.
In the above described method for producing a semiconductor particles, a precipitate containing the target semiconductor particles can be obtained by cooling the mixed solution after heating. By separating the precipitate and appropriately washing the precipitate, the target semiconductor particles can be obtained.
A solvent in which the synthesized semiconductor particles are insoluble or sparingly soluble is added to the supernatant from which the precipitate has been separated to reduce the solubility of the semiconductor particles in the supernatant to generate a precipitates, the semiconductor particles included in the supernatant can be collected. Examples of the “solvent in which the semiconductor particles are insoluble or sparingly soluble” include methanol, ethanol, acetone, and acetonitrile.
In the above described production method for the semiconductor particles, the separated precipitate is added to an organic solvent (such as chloroform, toluene, hexane, or n-butanol) to obtain a solution containing the semiconductor particles.
(Production Method for Semiconductor Particles (viii))
The semiconductor particles (viii) can be produced according to a method described below with reference to, for example, the known literature (Nano Lett. 2015, 15, 3692 to 3696, ACSNano, 2015, 9, 4533 to 4542).
(First Production Method)
Examples of the method for producing the perovskite compound include a production method including a step of dissolving a compound containing the component A, a compound containing the component B, and a compound containing the component X constituting the perovskite compound in a first solvent to obtain a solution, and a step of mixing the obtained solution and a second solvent.
The second solvent is a solvent having a lower solubility in the perovskite compound than the first solvent.
The solubility indicates the solubility at the temperature at which the step of mixing the obtained solution and the second solvent is carried out.
Examples of the first solvent and the second solvent include at least two types selected from the group consisting of organic solvents listed as (a) to (k) above.
For example, in a case where the step of mixing the solution and the second solvent is carried out at room temperature (10° C. to 30° C.), examples of the first solvent include the above described alcohol (d), glycol ether (e), organic solvent (0 containing an amide group, and dimethyl sulfoxide (k).
Further, in a case where the step of mixing the solution and the second solvent is carried out at room temperature (10° C. to 30° C.), examples of the second solvent include the above described ester (a), ketone (b), ether (c), organic solvent (g) having a nitrile group, organic solvent (h) having a carbonate group, halogenated hydrocarbon (i), and hydrocarbon (j).
Hereinbelow, specific explanations are made on the first production method.
First, a compound containing the component A, a compound containing the component B, and a compound containing the component X are dissolved in a first solvent to obtain a solution. The “compound containing the component A” may contain the component X. The “compound containing the component B” may contain the component X.
Then, the obtained solution and the second solvent are mixed. In the step of mixing the solution and the second solvent, (I) the solution may be added to the second solvent, or (II) the second solvent may be added to the solution. Since particles of the perovskite compound produced by the first production method is easily dispersed in the solution, it is preferable that (I) the solution is added to the second solvent.
When mixing the solution and the second solvent, one may be added dropwise to the other. Further, it is preferable to mix the solution and the second solvent with stirring.
In the step of mixing the solution and the second solvent, the temperature of the solution and the second solvent is not particularly limited. The temperature is preferably in a range of −20° C. to 40° C. and more preferably in a range of −5° C. to 30° C. from the viewpoint of ensuring easy precipitation of the perovskite compound. The temperature of the solution and the temperature of the second solvent may be the same or different.
A difference in solubility of perovskite compound between the first solvent and the second solvent is preferably in a range of (100 μg/100 g of solvent) to (90 g/100 g of solvent) and more preferably in a range of (1 mg/100 g of solvent) to (90 g/100 g of solvent).
As a combination of the first solvent and the second solvent, it is preferable that the first solvent is an organic solvent having an amide group such as N, N-dimethylacetamide or dimethyl sulfoxide, and the second solvent is a halogenated hydrocarbon or hydrocarbon. When the first solvent and the second solvent are preferably a combination of these solvents, for example, in a case where the step of mixing at room temperature (10° C. to 30° C.) is carried out, a difference in solubility of perovskite compound between the first solvent and the second solvent is easily controlled within the range of (100 μg/100 g of solvent) to (90 g/100 g of solvent).
By mixing the solution and the second solvent, the solubility of the perovskite compound is lowered in the obtained mixed solution, and the perovskite compound is precipitated. As a result, a dispersion containing the perovskite compound is obtained.
The perovskite compound can be recovered by performing solid-liquid separation on the obtained dispersion containing the perovskite compound. Examples of the solid-liquid separation method include filtration and concentration by evaporation of a solvent. It is possible to recover only the perovskite compound by performing solid-liquid separation.
From the viewpoint of stably dispersing the obtained particles of the perovskite compound in the dispersion, it is preferable that the above described production method includes a step of adding a surface modifier.
The step of adding the surface modifier is preferably performed before the step of mixing the solution and the second solvent. Specifically, the surface modifier may be added to the first solvent, the solution, or the second solvent. Further, the surface modifier may be added to both the first solvent and the second solvent.
It is preferable that the above described production method includes a step of removing coarse particles using a method of carrying out centrifugation or filtration after the step of mixing the solution and the second solvent. The size of the coarse particles to be removed by the removal step is preferably 10 μm or greater, more preferably 1 μm or greater, and still more preferably 500 nm or greater.
(Second Production Method)
Examples of the method for producing the perovskite compound include a production method including a step of dissolving a compound containing the component A, a compound containing the component B, and a compound containing the component X constituting the perovskite compound in a high-temperature third solvent to obtain a solution, and a step of cooling the solution.
Hereinbelow, specific explanations are made on the second production method.
First, a compound containing the component A, a compound containing the component B, and a compound containing the component X are dissolved in a high-temperature third solvent to obtain a solution. The “compound containing the component A” may contain the component X. The “compound containing the component B” may contain the component X.
In the present step, each compound may be added to a high-temperature third solvent and dissolved to obtain a solution.
Further, in the present step, after adding each compound to the third solvent, the temperature may be raised to obtain a solution.
Examples of the third solvent include a solvent capable of dissolving a compound containing the component A, a compound containing the component B, and a compound containing the component X, which are raw materials. Specifically, examples of the third solvent include the above-mentioned first solvent and second solvent.
The “high-temperature” may be any temperature at which each raw material is dissolved. For example, the temperature of the high-temperature third solvent is preferably 60 to 600° C., more preferably 80 to 400° C.
Then, the obtained solution is cooled.
The cooling temperature is preferably in a range of −20° C. to 50° C. and more preferably in a range of −10° C. to 30° C.
The cooling rate is preferably in a range of 0.1° C. to 1500° C./min and more preferably in a range of 10° C. to 150° C./min.
By cooling the hot solution, the perovskite compound can be precipitated by the difference in solubility due to the temperature difference of the solution. As a result, a dispersion containing the perovskite compound is obtained.
The perovskite compound can be recovered by performing solid-liquid separation on the obtained dispersion containing the perovskite compound. Examples of the solid-liquid separation method include the method shown in the first production method.
From the viewpoint of stably dispersing the obtained particle of the perovskite compound in the dispersion, it is preferable that the above described production method includes a step of adding a surface modifier.
The step of adding the surface modifier is preferably performed before the step of cooling the solution. Specifically, the surface modifier may be added to the third solvent or a solution containing at least one of a compound containing the component A, a compound containing the component B, and a compound containing the component X.
Further, it is preferable that the above described production method includes a step of removing coarse particles using a method of carrying out centrifugation or filtration shown in the first production method after the step of cooling the solution.
(Third Production Method)
Examples of the method for producing the perovskite compound include a step of obtaining a first solution in which a compound containing the component A and a compound containing the component B constituting the perovskite compound are dissolved, a step of obtaining a second solution in which a compound containing the component X constituting the perovskite compound are dissolved, a step of mixing the first solution and the second solution to obtain a mixed solution, and a step of cooling the obtained mixed solution.
Hereinbelow, specific explanations are made on the third production method.
First, a compound containing the component A and a compound containing the component B are dissolved in a high-temperature forth solvent to obtain a first solution.
Examples of the forth solvent include a solvent capable of dissolving a compound containing the component A and a compound containing the component B. Specifically, examples of the forth solvent include the above-mentioned third solvent.
The “high-temperature” may be any temperature at which the compound containing the component A and the compound containing the component B are dissolved. For example, the temperature of the high-temperature forth solvent is preferably 60 to 600° C., more preferably 80 to 400° C.
Further, a compound containing the component X is dissolved in a fifth solvent to obtain a second solution. The compound containing the component X may contain the component B.
Examples of the fifth solvent include a solvent capable of dissolving a compound containing the component X.
Specifically, examples of the fifth solvent include the above-mentioned third solvent.
Then, the obtained first solution and the second solution are mixed to obtain a mixed solution. When mixing the first solution and the second solvent, one may be added dropwise to the other. Further, it is preferable to mix the first solution and the second solution with stirring.
Then, the obtained mixed solution is cooled.
The cooling temperature is preferably in a range of −20° C. to 50° C. and more preferably in a range of −10° C. to 30° C.
The cooling rate is preferably in a range of 0.1° C. to 1500° C./min and more preferably in a range of 10° C. to 150° C./min.
By cooling the mixed solution, the perovskite compound can be precipitated by the difference in solubility due to the temperature difference of the mixed solution. As a result, a dispersion containing the perovskite compound is obtained.
The perovskite compound can be recovered by performing solid-liquid separation on the obtained dispersion containing the perovskite compound. Examples of the solid-liquid separation method include the method shown in the first production method.
From the viewpoint of stably dispersing the obtained particles of the perovskite compound in the dispersion, it is preferable that the above described production method includes a step of adding a surface modifier.
The step of adding the surface modifier is preferably performed before the step of cooling the mixed solution. Specifically, the surface modifier may be added to any of the forth solvent, the fifth solvent, the first solution, the second solution, and the mixed solution.
Further, it is preferable that the above described production method includes a step of removing coarse particles using a method of carrying out centrifugation or filtration shown in the first production method after the step of cooling the mixed solution.
<Formation of Coating Layer>
The coating layer (2) is obtained by subjecting the raw material compound of the coating layer (2) to a modification treatment. Examples of the raw material compound of the coating layer (2) include a raw material compound of the layer of the organic silicon compound having a siloxane bond and a raw material compound of the layer of the inorganic silicon compound having a siloxane bond.
In the following description, the raw material compound of the organic silicon compound having a siloxane bond is referred to as “raw material compound (2A)”.
Examples of the raw material compound (2A) include one or more compounds selected from the group consisting of silazane, the compound represented by above Formula (C1) (where Y5 is a single bond), the compound represented by above Formula (A5-51), and the compound represented by above Formula (A5-52).
Further, the raw material compound of the inorganic silicon compound having a siloxane bond is referred to as “raw material compound (2B)”.
Examples of the raw material compound (2B) include silazane, the compound represented by above Formula (C1) (excluding those in which Y5 is a single bond), the compound represented by above Formula (C2), and sodium silicate.
The coating layer (2) is obtained by performing a step (step 1) of forming either the layer of the organic silicon compound having a siloxane bond or the layer of the inorganic silicon compound having a siloxane bond on the surface of the semiconductor particles (1), and a step (step 2) of forming the other layer.
It is preferable that the coating layer (2) is formed by forming the layer of the organic silicon compound having a siloxane bond in the step 1 and forming the layer of the inorganic silicon compound having a siloxane bond in the step 2.
In this case, the coating layer (2) is obtained by performing a step (step 1) of mixing the raw material compound (2A) with a mixture of the semiconductor particles (1) and the solvent (3) to prepare a mixed solution, and subjecting the obtained mixture to a modification treatment, and a step (step 2) of mixing the raw material (2B) with the modified reaction solution to prepare a mixed solution, and subjecting the obtained mixed solution to a modification treatment.
Alternatively, the coating layer (2) is also obtained by performing a step (step 1) of mixing the mixture of the semiconductor particles (1) and the raw material compound (2A) and the mixture of the solvent (3) to prepare a mixed solution, and subjecting the obtained mixture to a modification treatment, and a step (step 2) of mixing the raw material (2B) with the modified reaction solution to prepare a mixed solution, and subjecting the obtained mixed solution to a modification treatment.
When preparing the mixed solution, it is preferable to mix each raw material while stirring the liquid.
The temperature at which the mixed solution is prepared is not particularly limited. Since it is easy to mix the mixed solution uniformly, the temperature at which the mixed solution is prepared is preferably in a range of 0° C. to 100° C., and more preferably in a range of 10° C. to 80° C.
In step 1, it is preferable that a mixture of the semiconductor particles and the solvent (3), and the raw material compound (2A) are mixed to prepare a mixed solution, and the obtained mixture is subjected to a modification treatment because it is easy to efficiently form the coating layer (2) on the surface of the semiconductor particles (1).
Examples of the method of the modification treatment include known methods such as a method of radiating the raw material compound (2A) or the raw material compound (2B) with ultraviolet rays, and a method of reacting the raw material compound (2A) or the raw material compound (2B) with water vapor. In the following description, the treatment of reacting the raw material compound (2A) or the raw material compound (2B) with water vapor may be referred to as “humidification treatment”.
The wavelength of ultraviolet rays used in the method involving irradiation with ultraviolet rays is typically 10 to 400 nm, preferably 10 to 350 nm, and more preferably 100 to 180 nm. Examples of the light source that generates ultraviolet rays include a metal halide lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a xenon arc lamp, a carbon arc lamp, an excimer lamp, and a UV laser beam.
In a case where the humidification treatment is performed, for example, the above described mixture may be allowed to stand or be stirred for a certain time under the humidity condition described below. During the humidification treatment, it is preferable to stir the mixed solution.
The temperature in the humidification treatment may be a temperature at which the modification proceeds sufficiently. For example, the temperature in the humidification treatment is preferably 5 to 150° C., more preferably 10 to 100° C., and more preferably 15 to 80° C.
The humidity during the humidification treatment may be a humidity at which the moisture is sufficiently supplied to the raw material compound (2A) or the raw material compound (2B) to be used. The humidity during the humidification treatment is, for example, preferably in a range of 30% to 100%, more preferably in a range of 40% to 95%, and still more preferably in a range of 60% to 90%. The “humidity” indicates the relative humidity at a temperature at which the humidification treatment is performed.
The time required for the humidification treatment may be a time at which the modification proceeds sufficiently. The time required for the humidification treatment is, for example, preferably in a range of 10 minutes to 1 week, more preferably in a range of 1 hour to 5 days, and still more preferably in a range of 2 hours to 3 days.
It is preferable to use a humidification treatment as the method of modification treatment because a strong protective region is easily formed in the vicinity of the semiconductor particles (1).
Water may be supplied in the humidification treatment by circulating a gas containing water vapor in the reaction vessel, or by stirring in an atmosphere containing water vapor to supply water from the interface.
In a case where a gas containing water vapor is circulated in the reaction vessel, the flow rate of the gas containing water vapor is preferably 0.01 L/min or greater and 100 L/min or less, more preferably 0.1 L/min or greater and 10 L/min or less, and still more preferably 0.15 L/min or greater and 5 L/min or less, from the viewpoint of improving the durability of the obtained luminescent particles. Examples of the gas containing water vapor include nitrogen containing a saturated amount of water vapor.
For examples, the luminescent particles of the present embodiment is obtained when the total amount of the raw material compound (2A) and the raw material compound (2B) used is 1.1 parts by mass to 10 parts by mass with respect to 1 part by mass of the semiconductor particles (1) and the temperature is 60° C. to 120° C.
In the present embodiment, the amount of the raw material compound (2A) used is preferably 1.1 to 10 parts by mass, more preferably 1.3 to 10 parts by mass, still more preferably 1.5 to 10 parts by mass, with respect to 1 part by mass of the semiconductor particles (1).
In the present embodiment, the amount of the raw material compound (2B) used is preferably 0.01 to 10 parts by mass, more preferably 0.05 to 5 parts by mass, still more preferably 0.1 to 3 parts by mass, with respect to 1 part by mass of the semiconductor particles (1).
In step 1 described above, the production of the semiconductor particles (1) by the above method may be carried our in a state where the raw material compound (2A) is mixed, and the obtained dispersion containing the semiconductor particles (1) may be subjected to a modification treatment. When semiconductor particles (1) is produced, a step of adding the surface modifier may be included.
In step 1, the raw material compound (2A) can be mixed into the reaction solution prior to the step of mixing the solution with the second solvent (first production method) or the step of cooling (second production method, third production method). By performing any of the above described first to third production methods in a state of containing the raw material compound (2A), the dispersion containing the raw material compound (2A) and the semiconductor particles (1) can be obtained. It is preferable to obtain the luminescent particles by subjecting the obtained dispersion to a modification treatment.
In a case where sodium silicate is used as the raw material compound (2B), it is preferable to appropriately modify sodium silicate by acid treatment to obtain a modified product.
<<Production Method 1 for Composition>>
Hereinafter, in order to make it easier to understand the properties of the obtained composition, the composition obtained by the production method 1 for the composition is referred to as a “liquid composition”.
The liquid composition of the present embodiment can be produced by mixing the luminescent particles with one or both of the solvent (3) and the polymerizable compound (4).
Further, the dispersion containing the luminescent particles obtained when the luminescent particles are produced by the above described production method corresponds to the liquid composition in the present embodiment.
When mixing the luminescent particles and the polymerizable compound (4), it is preferable to stir.
When the luminescent particles and polymerizable compound (4) are mixed, the temperature at the time of mixing is not particularly limited. The temperature is preferably in a range of 0° C. to 100° C., and more preferably in a range of 10° C. to 80° C. because the luminescent particles are easily mixed uniformly.
In addition, Examples of the production method for the liquid composition include the following production methods (c1) to (c3).
Production method (c1): a production method including a step of dispersing the semiconductor particles (1) in the polymerizable compound (4) to obtain a dispersion, a step of mixing the obtained dispersion and the raw material compound (2A), a step of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), and a step of performing a modification treatment.
The step up to the first humidification treatment is referred to as “step 1”, and the step from the first humidification treatment to the second humidification is referred to as “step 2”.
Production method (c2): a production method including a step of dispersing the raw material compound of the coating layer (2) in the polymerizable compound (4) to obtain a dispersion, a step of mixing the obtained dispersion and the semiconductor particles (1), a step (step 1) of performing a modification treatment, and the step 2.
Production method (c3): a production method including a step of dispersing the semiconductor particles (1) and the raw material compound (2A) in the polymerizable compound (4) to obtain a dispersion, a step (step 1) of performing a modification treatment, and the step 2.
In the step of obtaining each dispersion included in the step 1 of the production methods (c1) to (c3), the polymerizable compound (4) may be added dropwise to one or both of the semiconductor particles (1) and the raw material compound (2A), or one or both of the semiconductor particles (1) and the raw material compound (2A) may be added dropwise to the polymerizable compound (4).
Since it is easy to disperse uniformly, it is preferable that one or both of the semiconductor particles (1) and the raw material compound (2A) is added dropwise to the polymerizable compound (4).
In each mixing step included in the step 1 of the production methods (c1) to (c3), the semiconductor particles (1) or the raw material compound (2A) may be added dropwise to the dispersion, or the dispersion may be added dropwise to the semiconductor particles (1) of the raw material compound (2A).
Since it is easy to disperse uniformly, it is preferable that the semiconductor particles (1) or the raw material compound of the coating layer (2) is added dropwise to the dispersion.
In each mixing step included in the step 2 of the production methods (c1) to (c3), the raw material compound (2B) may be added dropwise to the reaction solution, or the reaction solution may be added dropwise to the raw material compound (2B).
Since it is easy to disperse uniformly, it is preferable that the raw material compound (2B) is added dropwise to the reaction solution.
The polymer (4-1) may be dissolved in the polymerizable compound (4).
Further, in the production methods (c1) to (c3), the polymer (4-1) dissolved in a solvent may be used instead of the polymerizable compound (4).
The solvent for dissolving the polymer (4-1) is not particularly limited as long as the solvent is a solvent capable of dissolving the polymer (4-1). As the solvent, a solvent that is difficult to dissolve the semiconductor particles (1) is preferable.
Examples of the solvent in which the polymer (4-1) is dissolved include the same solvent as the above described third solvent.
Among them, the second solvent is preferable because it has a low polarity and it is considered that the luminescent particles (1) are difficult to dissolve.
Among the second solvents, a halogenated hydrocarbon and a hydrocarbon are more preferable.
The production method for the liquid composition of the present embodiment may be the following production method (c4).
Production method (c4): a production method including a step of dispersing the semiconductor particles (1) in the solvent (3) to obtain a dispersion, a step of mixing the dispersion and the polymerizable compound (4) to obtain a mixed solution, a step of mixing the mixed solution and the raw material compound (2A), a step (step 1) of performing a modification treatment, and the step 2.
<<Production Method 2 for Composition>>
Examples of the production method for the composition of the present embodiment include a production method including a step of mixing the semiconductor particles (1), the raw material compound (2A), and polymerizable compound (4), a step of performing a modification treatment, and a step of polymerizing the polymerizable compound (4).
Examples of the production method for the composition of the present embodiment also include a production method including a step of mixing the semiconductor particles (1), the raw material compound (2A), and the polymer (4-1) dissolved in the solvent (3), a step of performing a modification treatment, and a step of removing the solvent (3).
As the mixing step included in the above described production method, the same mixing method as the production method for the composition described above can be used.
Examples of the production method for the composition include the following production methods (d1) to (d6).
Production method (d1): a production method including a step of dispersing the semiconductor particles (1) in the polymerizable compound (4) to obtain a dispersion, a step of mixing the obtained dispersion, the raw material compound (2A), and the surface modifier, a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of polymerizing the polymerizable compound (4).
Production method (d2): a production method including a step of dispersing the semiconductor particles (1) in the polymer (4-1) dissolved in the solvent (3) to obtain a dispersion, a step of mixing the obtained dispersion, the raw material compound (2A), and the surface modifier, a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of removing the solvent (3).
Production method (d3): a production method including a step of dispersing the raw material compound (2A) and the surface modifier in the polymerizable compound (4) to obtain a dispersion, a step of mixing the obtained dispersion and the semiconductor particles (1), a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of polymerizing the polymerizable compound (4).
Production method (d4): a production method including a step of dispersing the raw material compound (2A) and the surface modifier in the polymer (4-1) dissolved in the solvent (3) to obtain a dispersion, a step of mixing the obtained dispersion and the semiconductor particles (1), a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of removing the solvent (3).
Production method (d5): a production method including a step of dispersing the mixture of the semiconductor particles (1), raw material compound (2A) and the surface modifier in the polymerizable compound (4), a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of polymerizing the polymerizable compound (4).
Production method (d6): a production method including a step of dispersing the mixture of the semiconductor particles (1), raw material compound (2A) and the surface modifier in the polymer (4-1) dissolved in the solvent (3), a step (step 1) of performing a modification treatment, a step of mixing the obtained reaction solution and the raw material compound (2B), a step (step 2) of performing a modification treatment, and a step of removing the solvent (3).
The step of removing the solvent (3) included in the production methods (d2), (d4), and (d6) may be a step of allowing the solvent to stand at room temperature so as to be naturally dried or a step of evaporating the solvent (3) by heating or drying under reduced pressure using a vacuum dryer.
In the step of removing the solvent (3), for example, the solvent (3) can be removed by drying at a temperature of 0° C. to 300° C. for 1 minute to 7 days.
The step of polymerizing the polymerizable compound (4) included in the production methods (d1), (d3), and (d5) can be performed by appropriately using a known polymerization reaction such as radical polymerization.
For example, in a case of the radical polymerization, the polymerization reaction can be allowed to proceed by adding a radical polymerization initiator to the mixture of the semiconductor particles (1), the coating layer (2), and the polymerizable compound (4) to generate a radical.
The radical polymerization initiator is not particularly limited, and examples thereof include a photoradical polymerization initiator.
As the photoradical polymerization initiator, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide is an exemplary example.
<<Production Method 3 for Composition>>
Further, as the production method for the composition of the present embodiment, the following production method (d7) can also be employed.
Production method (d7): a production method including a step of melt-kneading the luminescent particles and the polymer (4-1).
In the production method (d7), the mixture of the luminescent particles and the polymer (4-1) may be melt-kneaded, or the luminescent particles may be added to the melted polymer (4-1).
As a method for melt-kneading the polymer (4-1), a known method as a polymer kneading method can be employed. For example, extrusion using a single-screw extruder or a twin-screw extruder can be employed.
<<Measurement Method>>
<Measurement of Luminescent Semiconductor Particles>
The amount of luminescent particles contained in the composition can be calculated as a solid content concentration (mass %) by the dry mass method.
<Measurement of Quantum Yield, Emission Intensity, and Half Width>
The quantum yield of the composition can be determined by measuring with excitation light having a wavelength of 450 nm at room temperature in the atmosphere using an absolute PL quantum yield measuring device (C9920-02, manufactured by Hamamatsu Photonics K. K.). Further, the emission intensity and the half width can be determined from the emission spectrum obtained by the measurement.
In a case of a composition containing a solution, the measurement is carried out by adjusting the solid content concentration of luminescent particles contained in the composition to 230 ppm (μg/g) using toluene.
In a case where the composition is a film, the composition composed of luminescent particles and solvent (3) is applied on a 1 cm×1 cm glass substrate and dried to obtain a coating film for the measurement. The obtained coating film is heat-treated at 100° C. for 12 hours to obtain a film of the luminescent particles, and then the measurement is performed.
In the above measurement, the emission intensity is preferably 2000 or greater, more preferably 2040 or greater, and still more preferably 2100 or greater.
In the above measurement, the half width is preferably 19.65 nm or less, more preferably 19.55 nm or less, and still more preferably 19.20 nm or less.
(Light Resistance Test 1)
The durability with respect to light (light resistance) of the composition of the present embodiment can be evaluated by the following method.
The composition composed of luminescent particles and the solvent (3) is applied on a 1 cm×1 cm glass substrate and dried to obtain a coating film. The obtained coating film is heat-treated at 100° C. for 12 hours to obtain a film of the luminescent particles.
While heating to 80° C., the film of the luminescent particles is irradiated with 30 mW/cm2 of light having a peak wavelength at 450 nm from an LED light source for 2 hours.
The quantum yield of the composition before light irradiation and the quantum yield of the composition after light irradiation is measured, and the maintenance ratio is determined based on the following Formula. It can be evaluated that the higher the maintenance ratio, the higher the durability with respect to light of the composition.
Maintenance ratio (%)=(quantum yield of composition after light resistance test)÷(quantum yield of composition before light resistance test)×100
The maintenance ratio of the composition of the present embodiment may be 49.0% or greater, 53.0% or greater, or 55.0% or greater when the standing period is 2 hours in the above durability test.
(Light Resistance Test 2)
The durability with respect to light (light resistance) of the composition of the present embodiment can also be evaluated by the following method.
The composition composed of luminescent particles and the solvent (3) is applied on a 1 cm×1 cm glass substrate and dried to obtain a coating film.
While heating to 50° C., the film of the luminescent particles is irradiated with 80 mW/cm2 of light having a peak wavelength at 450 nm from an LED light source for 2 hours.
The quantum yield of the composition before light irradiation and the quantum yield of the composition after light irradiation is measured, and the maintenance ratio is determined based on the above Formula. It can be evaluated that the higher the maintenance ratio, the higher the durability with respect to light of the composition.
The maintenance ratio of the composition of the present embodiment may be 84% or greater, 85% or greater, or 90% or greater when the standing period is 2 hours in the above durability test.
According to the composition having the above described configurations, it is possible to provide a composition containing luminescent particles and having high durability with respect to light.
<<Film>>
The film according to the present embodiment uses the above described composition as a fabrication material. For example, the film according to the present embodiment contains the luminescent particles and the polymer (4-1), in which the total amount of the luminescent particles and the polymer (4-1) is 90% by mass or greater with respect to the total mass of the film.
The shape of the film is not particularly limited, and the film can be formed in an arbitrary shape such as a sheet shape or a bar shape. In the present specification, the “bar shape” means, for examples, a band shape in plan view extending in one direction. Examples of the band shape in plan view include a plate shape having different lengths on each side.
The thickness of the film may be in a range of 0.01 μm to 1000 mm, in a range of 0.1 μm to 10 mm, or in a range of 1 μm to 1 mm.
In the present specification, when the side with the smallest length value among the length, width, and height of the film is set to the “thickness direction”, the thickness of the film refers to the distance between the front surface and the back surface in the thickness direction of the film. Specifically, the thickness of the film is measured at any three points of the film using a micrometer, and the average value of the measured values at the three points is taken as the thickness of the film.
The film may be formed of a single layer or a plurality of layers. In a case of a plurality of layers, the same kind of composition may be used for each layer or different kinds of composition may be used for respective layers.
For example, the film can be obtained as a film formed on a substrate according to production methods for a laminated structure (e1) to (e3) described below. Further, the film can be obtained by being peeled off from the substrate.
<<Laminated Structure>>
The laminated structure according to the present embodiment has a plurality of layers, at least one of which is the above-described film.
Among the plurality of layers included in the laminated structure, examples of layers other than the above-described film include optional layers such as a substrate, a barrier layer, and a light scattering layer.
The shape of the film to be laminated is not particularly limited, and the film can be formed in an arbitrary shape such as a sheet shape or a bar shape.
(Substrate)
The substrate is not particularly limited and may be a film. The substrate is preferably a substrate having light transmission. A laminated structure having a substrate having light transmission is preferable because the light emitted by the luminescent particles can be easily taken out.
As the substrate forming material, for example, a polymer such as polyethylene terephthalate or a known material such as glass can be used.
For example, the above-described film may be provided on the substrate in the laminated structure.
According to one aspect of the present invention, the laminated structure 1a includes the first substrate 20, the second substrate 21, the film 10 according to the present embodiment which is positioned between the first substrate 20 and the second substrate 21, and the sealing layer 22 and is configured such that the sealing layer is disposed on a surface that does not contact with the first substrate 20 and the second substrate 21 of the film 10.
(Barrier Layer)
The layer which may be included in the laminated structure according to the present embodiment is not particularly limited, and examples thereof include a barrier layer. The laminated structure may include a barrier layer because the barrier layer protects the above-described composition from water vapor in outside air or the air in the atmosphere.
The barrier layer is not particularly limited, and a transparent barrier layer is preferable from the viewpoint of extracting emitted light. For example, a polymer such as polyethylene terephthalate or a known barrier layer such as a glass film can be used as the barrier layer.
(Light Scattering Layer)
The layer which can be included in the laminated structure according to the present embodiment is not particularly limited, and examples thereof include a light scattering layer. From the viewpoint of efficiently utilizing incident light, the laminated structure may include a light scattering layer.
The light scattering layer is not particularly limited, and a transparent light scattering layer is preferable from the viewpoint of extracting emitted light. For example, light scattering particles such as silica particles or a known light scattering layer such as an amplified diffusion film can be used.
<<Light-Emitting Device>>
A light-emitting device according to the present embodiment can be obtained by combining the film according to the present embodiment or the laminated structure according to the present embodiment with a light source. The light-emitting device is a device that extracts light by irradiating the film or the laminated structure placed in the light emitting direction of light source with light emitted from the light source and allowing the film or the laminated structure to emit light.
Among a plurality of layers included in the laminated structure in the light-emitting device, examples of layers other than the film, the substrate, the barrier layer, and the light scattering layer include optional layers such as a light reflection member, a brightness-reinforcing film, a prism sheet, a light-guiding plate, and a medium material layer between elements.
According to one aspect of the present invention, a light-emitting device 2 is formed by laminating a prism sheet 50, a light-guiding plate 60, the first laminated structure 1a, and a light source 30 in this order.
(Light Source)
As the light source constituting the light emitting device according to the present embodiment, a light source that emits light included in the absorption wavelength band of the luminescent particles is used. For example, a light source having an emission wavelength of 600 nm or less is preferable, from the viewpoint of allowing the semiconductor particles in the above described film or the laminated structure to emit light. Examples of the light source include known light sources, for example, a light-emitting diode (LED) such as a blue light-emitting diode, a laser, and an EL.
(Light Reflection Member)
The layer which may be included in the laminated structure constituting the light-emitting device according to the present embodiment is not particularly limited, and examples thereof include a light reflection member. The light-emitting device having a light reflecting member can efficiently irradiate the light of the light source toward the film or the laminated structure.
The light reflection member is not particularly limited and may be a reflective film. Examples of the light reflection member include known reflective films such as a reflecting mirror, a film formed of reflective particles, a reflective metal film, and a reflector.
(Brightness-Reinforcing Unit)
The layer which may be included in the laminated structure constituting the light-emitting device according to the present embodiment is not particularly limited, and examples thereof include a brightness-reinforcing unit. From the viewpoint of reflecting partial light to be returned to the direction in which the light is transmitted, the laminated structure may include the brightness-reinforcing unit.
(Prism Sheet)
The layer which may be included in the laminated structure constituting the light-emitting device according to the present embodiment is not particularly limited, and examples thereof include a prism sheet. A prism sheet typically includes a base material portion and a prism portion. Further, the base material portion may not be provided depending on a member adjacent to the base material portion.
The prism sheet can be attached to adjacent members through an optional appropriate adhesion layer (for example, an adhesive layer or a pressure sensitive adhesive layer).
In a case where the light-emitting device is used for a display described below, the prism sheet is configured such that a plurality of unit prisms which become projections are arranged in parallel with one another on a side (rear side) opposite to a viewing side. Light transmitted through the prism sheet is likely to be focused by arranging the projections of the prism sheet toward the rear side. Further, in a case where the projections of the prism sheet are arranged toward the rear side, the quantity of light to be reflected without being incident on the prism sheet is small compared to a case where the projections are arranged toward the viewing side, and a display with high brightness can be obtained.
(Light-Guiding Plate)
The layer which may be included in the laminated structure constituting the light-emitting device according to the present embodiment is not particularly limited, and examples thereof include a light-guiding plate. As the light-guiding plate, an optional appropriate light-guiding plate such as a light-guiding plate in which a lens pattern is formed on the rear side such that light from the lateral direction can be deflected in the thickness direction or a light-guiding plate in which a prism shape or the like is formed on either or both of the rear side and the viewing side can be used.
(Medium Material Layer Between Elements)
The layer which may be included in the laminated structure constituting the light-emitting device according to the present embodiment is not particularly limited, and examples thereof include a layer (medium material layer between elements) formed of one or more medium materials on an optical path between elements (layers) adjacent to each other.
One or more mediums included in the medium material layer between elements are not particularly limited, and examples thereof include vacuum, air, gas, an optical material, an adhesive, an optical adhesive, glass, a polymer, a solid, a liquid, a gel, a curing material, an optical bonding material, a refractive index matching or refractive index mismatching material, a refractive index gradient material, a cladding or anti-cladding material, a spacer, a silica gel, a brightness-reinforcing material, a scattering or diffusing material, a reflective or anti-reflective material, a wavelength selective material, a wavelength selective anti-reflective material, a color filter, and suitable media known in the technical field.
Specific examples of the light-emitting device according to the present embodiment include those provided with wavelength conversion materials for an EL display and a liquid crystal display. Specific examples thereof include the following configurations (E1) to (E4).
Configuration (E1): a backlight (on-edge type backlight) that converts blue light to green light or red light by putting the composition of the present embodiment into a glass tube or the like so as to be sealed and disposing the glass tube or the like between a light-guiding plate and a blue light-emitting diode serving as a light source such that the glass tube or the like is along with an end surface (side surface) of the light-guiding plate.
Configuration (E2): a backlight (surface-mounting type backlight) that converts blue light to be irradiated to a sheet after passing through a light-guiding plate from a blue light-emitting diode placed on an end surface (side surface) of the light-guiding plate to green light or red light by forming the sheet using the composition of the present embodiment and placing a film obtained by interposing the sheet between two barrier films so as to be sealed on the light-guiding plate.
Configuration (E3): a backlight (on-chip type backlight) that converts blue light to be irradiated to green light or red light by dispersing the composition of the present embodiment in a resin or the like and placing the resin or the like in the vicinity of a light-emitting unit of a blue light-emitting diode.
Configuration (E4): a backlight that converts blue light to be irradiated from a light source to green light or red light by dispersing the composition of the present embodiment in a resist and placing the resist on a color filter.
Further, specific examples of the light-emitting device according to the present embodiment include an illumination emitting white light which is obtained by forming the composition according to the present embodiment, disposing the composition on a back stage of a blue light-emitting diode serving as a light source, and converting blue light to green light or red light.
<<Display>>
As shown in
According to one aspect of the present invention, the display is the liquid crystal display 3 obtained by laminating the liquid crystal panel 40, the prism sheet 50, the light-guiding plate 60, the first laminated structure 1a, and the light source 30 in this order.
(Liquid Crystal Panel)
The liquid crystal panel typically includes a liquid crystal cell; a viewing-side polarizing plate disposed on a viewing side of the liquid crystal cell; and a rear-surface-side polarizing plate disposed on a rear surface side of the liquid crystal cell. The viewing-side polarizing plate and the rear-surface-side polarizing plate can be disposed such that respective absorption axes are substantially orthogonal or parallel to each other.
(Liquid Crystal Cell)
The liquid crystal cell includes a pair of substrates; and a liquid crystal layer serving as a display medium interposed between the substrates. In a typical configuration, a color filter and a black matrix are provided on one substrate. Further, a switching element that controls electro-optical characteristics of a liquid crystal; a scanning line that sends a gate signal to the switching element and a signal line that sends a source signal to the switching element; and a pixel electrode and a counter electrode are provided on the other substrate. The interval (cell gap) between the substrates can be controlled by a spacer or the like. An alignment film formed of polyimide can be provided on a side of the substrate that contacts the liquid crystal layer.
(Polarizing Plate)
The polarizing plate typically includes a polarizer and a protective layer disposed on both sides of the polarizer. Typically, the polarizer is an absorption type polarizer.
As the polarizer, an appropriate optional polarizer is used. Examples thereof include a polarizer obtained by adsorbing a dichroic material such as iodine or a dichroic dye on a hydrophilic polymer film such as a polyvinyl alcohol-based film, a partially formalized polyvinyl alcohol-based film, or an ethylene-vinyl acetate copolymer-based partially saponified film, followed by uniaxially stretching the resulting film; and a polyene-based alignment film such as a dehydrated product of polyvinyl alcohol or a dehydrochlorinated product of polyvinyl chloride. Among these, an example particularly preferable from the viewpoint of a high dichroic ratio is a polarizer obtained by adsorbing a dichroic material such as iodine on a polyvinyl alcohol-based film, followed by uniaxially stretching the resulting film.
<<Use of Composition>>
Examples of the use of the composition according to the present embodiment include the following uses.
<LED>
For example, the composition according to the present embodiment can be used as a material for a light-emitting layer of an LED.
As the LED containing the composition of the present embodiment, an LED which has a structure in which the composition of the present embodiment and conductive particles such as ZnS are mixed and laminated in a film shape, an n-type transport layer is laminated on one surface, and a p-type transport layer is laminated on the other surface and emits light by circulating the current so that positive holes of a p-type semiconductor and electrons of an n-type semiconductor cancel the charge in the luminescent particles contained in the bonding surface of the composition is an exemplary example.
<Solar Cell>
The composition of the present embodiment can be used as an electron transport material contained in an active layer of a solar cell.
The configuration of the solar cell is not particularly limited, and examples thereof include a solar cell which includes a fluorine-doped tin oxide (FTO) substrate, a titanium oxide dense layer, a porous aluminum oxide layer, an active layer containing the composition of the present invention, a hole transport layer such as 2,2′,7,7′-tetrakis-(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-MeOTAD), and a silver (Ag) electrode in this order.
The titanium oxide dense layer has a function of transporting electrons, an effect of suppressing the roughness of FTO, and a function of suppressing movement of inverse electrons.
The porous aluminum oxide layer has a function of improving the light absorption efficiency.
The composition of the present embodiment which is contained in the active layer plays a role of charge separation and electron transport.
<Sensor>
The composition of the present embodiment can be used as the photoelectric conversion element (photodetection element) material which is used as image detector (image sensor) for solid-state image sensors such as X-ray image sensors and CMOS image sensors, a detection unit that detects specific features of a part of the living body, such as a fingerprint detector, a face detector, a vein detector and an iris detector, or a detection unit of an optical biosensor such as a pulse oximeter.
<<Production Method for Film>>
Examples of the production method for film include the following production methods (e1) to (e3).
Production method (e1): a production method for a film, which includes a step of applying a liquid composition to obtain a coating film and a step of removing the solvent (3) from the coating film.
Production method (e2): a production method for a film, which includes a step of applying a liquid composition containing the polymerizable compound (4) to obtain a coating film and a step of polymerizing the polymerizable compound (4) contained in the obtained coating film.
Production method (e3): a production method for a film by molding the compositions obtained in the above described production methods (d1) to (d6).
<<Production Method for Laminated Structure>>
Examples of the production method for a laminated structure include the following production methods (f1) to (f3).
Production method (f1): a production method for a laminated structure, which includes a step of producing a liquid composition, a step of coating the obtained liquid composition on a substrate, and a step of removing the solvent (3) from the obtained coating film.
Production method (f2): a production method for a laminated structure, which includes a step of laminating a film on a substrate.
Production method (f3): a production method for a laminated structure, which includes a step of producing a liquid composition containing the polymerizable compound (4), a step of coating the obtained liquid composition on a substrate, and a step of polymerizing the polymerizable compound (4) included in the obtained coating film.
As the steps for producing the liquid composition in the production methods (f1) and (f3), the above described production methods (c1) to (c4) can be employed.
The steps of coating the liquid composition on the substrate in the production methods (f1) and (f3) are not particularly limited and can be carried out using a known coating method such as a gravure coating method, a bar coating method, a printing method, a spray method, a spin coating method, a dip method, or a die coating method.
The step of removing the solvent (3) in the production method (f1) may be the same as the step of removing the solvent (3) included in the above described production methods (d2), (d4), and (d6).
The step of polymerizing the polymerizable compound (4) in the production method (f3) may be the same as the step of polymerizing the polymerizable compound (4) included in the above described production methods (d1), (d3) and (d5).
In the step of laminating the film on the substrate, included in the production method (f2), an optional adhesive can be used.
The adhesive is not particularly limited as long as the luminescent particles are not dissolved therein, and a known adhesive can be used.
The production method for a laminated structure may be a production method including a step of further laminating an optional film on the obtained laminated structure.
Examples of the optional film to be laminated include a reflective film and a diffusion film.
An optional adhesive can be used in the step of laminating the film on the substrate.
The above described adhesive is not particularly limited as long as the luminescent particles are not dissolved therein, and a known adhesive can be used.
<<Production Method for Light-Emitting Device>>
A production method including a step of placing the light source, and the film or the laminated structure on the optical path of light emitted from the light source is an exemplary example.
Further, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be added within the range not departing from the spirit of the present invention.
Hereinbelow, the present invention will be described with reference to Examples and Comparative Examples which, however, should not be construed as limiting the present invention.
In the Examples, as the semiconductor particles (1), semiconductor particles containing the above-mentioned perovskite compound (viii) were used.
(Measurement of Concentration of Perovskite Compound)
The concentration of the perovskite compound in the composition obtained in each of Examples 1 and 2, and Comparative Example 1 was measured by the following method.
First, a dispersion was obtained by re-dispersing semiconductor particles (1) (perovskite compound) obtained by the method described below in a precisely-weighed toluene. Then, the perovskite compound was dissolved by adding N,N-dimethylformamide to the obtained dispersion.
Then, Cs and Pb contained in the dispersion were quantified by ICP-MS (ELAN DRCII, manufactured by PerkinElmer, inc.). Further, Br contained in the dispersion was quantified by ion chromatography (“Integration”, manufactured by Thermo Fisher Scientific K.K.). The mass of the perovskite compound contained in the dispersion was determined from the sum of the measured values, and the concentration of the dispersion was determined from the mass of the perovskite compound and the amount of toluene.
(Measurement of Quantum Yield, Emission Intensity, Half Width)
The quantum yield of each of the compositions obtained in Examples 1 and 2, and Comparative Example 1 was measured with excitation light having a wavelength of 450 nm at room temperature in the atmosphere using an absolute PL quantum yield measuring device (C9920-02, manufactured by Hamamatsu Photonics K. K.). Further, the emission intensity and the half width were determined from the emission spectrum obtained by the measurement.
(Evaluation 1 of Light Resistance)
50 μL of the composition obtained in each of Examples 1 and 2, and Comparative Example 1 was applied onto a glass substrate having a size of 1 cm×1 cm, air-dried, and then heat-treated at 100° C. for 12 hours to obtain a film of luminescent particles. While heating to 80° C., the obtained film was irradiated with 30 mW/cm2 of light having a peak wavelength at 450 nm from an LED light source for 2 hours.
(Evaluation 2 of Light Resistance)
50 μL of the composition obtained in Example 3 was applied onto a glass substrate having a size of 1 cm×1 cm, and air-dried. While heating to 50° C., the obtained film was irradiated with 80 mW/cm2 of light having a peak wavelength at 450 nm from an LED light source for 2 hours.
The quantum yield of the composition before light irradiation and the quantum yield of the composition after light irradiation were measured, and the maintenance ratio was determined based on the following formula. It can be evaluated that the higher the maintenance ratio, the higher the light resistance of the composition.
Maintenance ratio (%)=(quantum yield of composition after light resistance test)÷(quantum yield of composition before light resistance test)×100
(Observation of Semiconductor Particles (1) with Transmission Electron Microscope)
The semiconductor particles (1) were observed using a transmission electron microscope (JEM-2200FS, manufactured by JEOL Ltd.). The sample for observation was obtained by collecting semiconductor particles (1) from the composition on a grid with a support film. Regarding the observation condition, the acceleration voltage was set to 200 kV.
The distance between the parallel lines when the image of a semiconductor particle shown in the obtained electron micrograph was interposed between two parallel lines was determined as a ferret diameter. The arithmetic mean value of the ferret diameters of 20 semiconductor particles was calculated to obtain an average ferret diameter.
The amount of substance (B) (unit: mol) of the metal ions as the component B of the perovskite compound was determined by measuring the mass of the metal as the component B by inductively coupled plasma mass spectrometry (ICP-MS), and converting the measured value to the amount of substance.
The amount of substance (Si) of the Si element of the modified product was determined from the value obtained by converting the mass of the raw material compounds of the modified product used into the molar amount and the amount of Si (amount of substance) contained per unit mass of the raw material compounds. The unit mass of the raw material compounds is the molecular weight of the raw material compound if the raw material compound is a low molecular weight compound, and is the molecular weight of the repeating unit of the raw material compound if the raw material compound is a polymeric compound.
The molar ratio [Si/B] was calculated from the amount of substance (Si) of the Si element and the amount of substance (B) of the metal ions as the component B of the perovskite compound.
0.814 g of cesium carbonate, 40 mL of a solvent containing 1-octadecene, and 2.5 mL of oleic acid were mixed. The resulting mixture was stirred using a magnetic stirrer and heated at 150° C. for 1 hour while circulating nitrogen, thereby obtaining a cesium carbonate solution.
0.276 g of lead bromide (PbBr2) was mixed into 20 mL of a solvent of 1-octadecene. 2 mL of oleic acid and 2 mL of oleylamine were added to the resulting mixture after the mixture had been stirred using a magnetic stirrer and heated at 120° C. for 1 hour while circulating nitrogen, thereby preparing a lead bromide dispersion.
The lead bromide dispersion was heated to a temperature of 160° C., and 1.6 mL of the above-described cesium carbonate solution was added thereto. After the addition, a dispersion containing semiconductor particles (1) was obtained by immersing the reactor in ice water such that the temperature was decreased to room temperature.
Next, the dispersion was subjected to centrifugation at 10000 rpm for 5 minutes, and the resulting precipitate was separated to obtain particles of a perovskite compound (semiconductor particles (1)). The perovskite compound was dispersed in 5 mL of toluene, 500 μL of the dispersion was separated, and the compound was re-dispersed in 4.5 mL of toluene to obtain a dispersion containing the perovskite compound and the solvent.
The concentration of the perovskite compound measured using the ICP-MS and the ion chromatograph was 2000 ppm (μg/g).
As the result of measurement performed on the X-ray diffraction pattern of the compound recovered by air-drying the solvent using an X-ray diffraction measuring device (XRD, CuKα ray, X'pert PRO MPD, manufactured by Spectris plc), the XRD spectrum showed a peak ascribed to (hkl)=(001) at a position where 2θ=14°. From the measurement results, it was confirmed that the recovered compound was a compound having a three-dimensional perovskite crystal structure.
The average Feret diameter of the perovskite compound determined by observation using TEM was 11 nm.
After diluting the dispersion with toluene so that the concentration of the perovskite compound became 200 ppm (μg/g), the quantum yield was measured by the quantum yield measuring device and found to be 30%.
Next, 100 μL of organopolysilazane (Durazane 1500 Slow Cure, manufactured by Merck Performance Materials Ltd.) was mixed with the above-mentioned dispersion containing the perovskite compound and the solvent to obtain a first dispersion. The density of the organopolysilazane used was 0.967 g/cm3. In the first dispersion, the molar ratio of the Si element contained in the organopolysilazane to the Pb element contained in the perovskite compound was: Si/Pb=76.
The first dispersion was reformed for 1 day at 25° C. and 80% humidity while stirring with a stirrer. By this reforming treatment, first particles in which a layer of an organic silicon compound (2-1) having a siloxane bond was formed on the surface of the semiconductor particles (1) were obtained. Further, a second dispersion in which the first particles were dispersed was obtained.
Next, into the second dispersion, 5 μL of perhydropolysilazane (AZNN-120-20, manufactured by Merck Performance Materials Ltd., 20% by mass concentration, dibutyl ether solution, specific gravity of polysilazane component 1.3 cm3) was mixed to obtain a third dispersion. In the third dispersion, the molar ratio of the Si element contained in the perhydropolysilazane to the Pb element contained in the perovskite compound was: Si/Pb=1.56.
The third dispersion was reformed for 1 day at 25° C. and 80% humidity while stirring with a stirrer. By this reforming treatment, luminescent particles in which a layer of an inorganic silicon compound (2-2) having a siloxane bond was formed on the surface of the first particles were obtained. Further, a liquid composition in which the luminescent particles were dispersed was obtained.
The emission intensity and half width of the obtained liquid composition were evaluated by the above-mentioned methods, and it was found that the half width was 19.25 nm and the emission intensity was 2042.
The evaluation 1 of light resistance was implemented with respect to the obtained liquid composition, and it was found that the maintenance ratio was 55.7%.
A composition was produced in the same manner as in Example 1 except that the perhydropolysilazane was used in an amount of 10 μL for forming the layer of the inorganic silicon compound (2-2) having a siloxane bond on the surface of the semiconductor particles (1).
In the dispersion of the luminescent particles and the solvent (3), the molar ratio of the Si element contained in the inorganic polysilazane to the Pb element contained in the perovskite compound was: Si/Pb=3.13.
The emission intensity and the half width of the obtained composition were evaluated, and it was found that the half width was 19.60 nm and the emission intensity was 2019.
The evaluation 1 of light resistance was implemented with respect to the composition obtained from the composition, and it was found that the maintenance ratio was 52.8%.
Following the same procedure as in Example 1, first particles in which a layer of an organic silicon compound (2-1) having a siloxane bond was formed on the surface of the semiconductor particles (1) were obtained. Further, a second dispersion in which the first particles were dispersed was obtained.
Next, 17.5 mg of tetraethyl orthosilicate was mixed with 5 g of the second dispersion to obtain a third dispersion. In the third dispersion, the molar ratio of the Si element contained in the tetraethyl orthosilicate to the Pb element contained in the perovskite compound was: Si/Pb=3.5.
The third dispersion was reformed for 4 hours at 25° C. and 80% humidity while stirring with a stirrer. By this reforming treatment, luminescent particles in which a layer of an inorganic silicon compound (2-2) having a siloxane bond was formed on the surface of the first particles were obtained. Further, a liquid composition in which the luminescent particles were dispersed was obtained.
The evaluation 2 of light resistance was implemented with respect to the obtained liquid composition, and it was found that the maintenance ratio was 90%.
A composition was produced in the same manner as in Example 1 except that the layer of the inorganic silicon compound (2-2) having a siloxane bond was not formed on the surface of the semiconductor particles (1) (that is, the amount of the perhydropolysilazane was 0 μL).
The emission intensity and the half width of the obtained composition were evaluated, and it was found that the half width was 19.69 nm and the emission intensity was 1889.
The light resistance of the composition obtained from the composition was evaluated, and it was found that the maintenance ratio was 48.7%.
The above results confirmed that the present invention is useful.
The composition obtained in each of Examples 1 to 3 is placed in a glass tube or the like and sealed, and the resulting is placed between a blue light-emitting diode as a light source and a light-guiding plate, thereby producing a backlight that can convert the blue light of the blue light-emitting diode into green light or red light.
A film can be obtained by forming a sheet of the composition of each of Examples 1 to 3. By placing a film obtained by interposing the sheet of the resin composition between two barrier films so as to be sealed on the light-guiding plate, a backlight is produced, which converts blue light to be irradiated to the sheet after passing through the light-guiding plate from a blue light-emitting diode placed on an end surface (side surface) of the light-guiding plate to green light or red light.
By placing the composition of each of Examples 1 to 3 in the vicinity of a light-emitting unit of a blue light-emitting diode, a backlight capable of converting blue light to be irradiated thereto to green light or red light is produced.
A wavelength conversion material can be obtained by removing the solvent after mixing the composition of each of Examples 1 to 3 with a resist. By placing the obtained wavelength conversion material between the blue light-emitting diode as a light source and the light-guiding plate or downstream of the OLED as a light source, a backlight capable of converting blue light from the light source to green light or red light is produced.
The composition of each of Examples 1 to 3 is mixed with conductive particles such as ZnS and formed into a film. An n-type transport layer is laminated on one side of the film, while laminating a p-type transport layer on the other side of the film, to thereby obtain an LED. An electric current passed through an LED allows the holes of the p-type semiconductor and the electrons of the n-type semiconductor to meet with each other in the perovskite compound at the junction interface to cancel out electric charge, thereby enabling the LED to emit light.
A titanium oxide dense layer is laminated on the surface of a fluorine-doped tin oxide (FTO) substrate. On the surface of this FTO substrate, a porous aluminum oxide layer is laminated, whereon the composition of each of Examples 1 to 3 are laminated. After removing the solvent from the resulting laminate, a hole transport layer such as 2,2′-,7,7′-tetrakis-(N,N′-di-p-methoxyphenylamine)9,9′-spirobifluorene (Spiro-OMeTAD) is laminated thereon, whereon a silver (Ag) layer is further laminated to produce a solar cell.
The composition of the present invention can be obtained by removing the solvent from the composition of each of Examples 1 to 3, and molding the resulting product, and by installing the obtained composition downstream of the blue light-emitting diode, a laser diode lighting is produced, which converts blue light irradiated to the composition from the blue light-emitting diode to green light or red light, thereby emitting while light.
The composition of the present embodiment can be obtained by removing the solvent from the composition of each of Examples 1 to 3, and molding the resulting product. By using the obtained composition as a part of a photoelectric conversion layer, a photoelectric conversion element (photodetection element) material to be used in a light detection unit is produced. The photoelectric conversion element material is used as an image detector (image sensor) for solid-state image sensors such as X-ray image sensors and CMOS image sensors, a detection unit that detects specific features of a part of the living body, such as a fingerprint detector, a face detector, a vein detector and an iris detector, or an optical biosensor such as a pulse oximeter.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-202356 | Oct 2018 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2019/042098 | 10/28/2019 | WO | 00 |
