Claims
- 1. A method of manufacturing a high areal storage density, patterned magnetic data/information recording, storage and retrieval medium, which method comprises the sequential steps of:(a) providing a non-magnetic substrate having a surface for layer formation thereon; (b) forming a layer of an amorphous, paramagnetic or anti-paramagnetic material on said substrate surface, said layer of amorphous, paramagnetic or anti-paramagnetic material comprising at least one component which is ferromagnetic when in at least partially crystallized form; and (c) at least partially crystallizing said at least one component of said layer of amorphous, paramagnetic or anti-paramagnetic material at selected locations thereof to thereby form a pattern of at least partially crystallized, ferromagnetic particles or grains of said at least one component of said layer, said ferromagnetic particles or grains being spaced apart and surrounded by a matrix of said amorphous, paramagnetic or anti-paramagnetic material.
- 2. The method according to claim 1, wherein:step (b) comprises forming as said amorphous, paramagnetic or anti-paramagnetic layer a metal glass layer including at least one metal element which is ferromagnetic when in at least partially crystallized form.
- 3. The method according to claim 2, wherein:step (b) comprises forming a metal glass layer comprising at least one metal element selected from the group consisting of iron (Fe), nickel (Ni), cobalt (Co) as said amorphous, paramagnetic or anti-paramagnetic layer.
- 4. The method according to claim 1, wherein:step (c) comprises at least partially crystallizing said at least one component of said amorphous, paramagnetic or anti-paramagnetic layer by increasing the temperature of said layer at said selected locations.
- 5. The method according to claim 4, wherein:step (c) comprises increasing the temperature of said layer at said selected locations up to at least a phase transition temperature of said at least one component.
- 6. The method according to claim 5, wherein:step (c) comprises increasing the temperature of said layer at said selected locations up to the melting point of said at least one component thereof.
- 7. The method according to claim 4, wherein:step (c) comprises increasing the temperature of said layer at said selected locations by irradiation with photons or energetic particles.
- 8. The method according to claim 7, wherein:step (c) comprises photon irradiation utilizing a focussed laser or a focussed, high-intensity lamp as a source of photons.
- 9. The method according to claim 7, wherein:step (c) comprises utilizing an electron beam as a source of energetic particles.
- 10. The method according to claim 7, wherein:step (c) comprises scanning said photons or said energetic particles across the surface of said layer to impinge thereupon at said selected locations, or irradiating said photons or energetic particles through an aperture-patterned mask having a plurality of openings extending therethrough with predetermined dimensions corresponding to a preselected size of said at least partially crystallized, ferromagnetic particles or grains.
- 11. The method according to claim 7, wherein:step (c) comprises forming a two-dimensional pattern.
- 12. The method according to claim 11, wherein:step (c) comprises forming a checkerboard pattern.
- 13. The method according to claim 1, wherein;step (a) comprises providing a non-magnetic, disk-shaped substrate comprising a material selected from the group consisting of: metals, metal alloys, aluminum (Al), Al-based alloys, ceramics, glasses, polymers, and composites thereof; step (b) comprises forming a layer of amorphous nickel-phosphorus (Ni—P) as said amorphous, paramagnetic or anti-paramagnetic material; and step (c) comprises increasing the temperature of said amorphous Ni—P layer at said selected locations to up to about 350° C. for an interval sufficient to form and at least partially crystallize ferromagnetic Ni particles or grains thereat.
RELATED APPLICATIONS
This application is a divisional of U.S. patent application Ser. No. 09/593,243, filed Jun. 14, 2000, now U.S. Pat. No. 6,387,530, which claims priority from provisional application No. 60/151,029, filed Aug. 27, 1999.
US Referenced Citations (9)
Provisional Applications (1)
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Number |
Date |
Country |
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60/151029 |
Aug 1999 |
US |