The invention relates to the field of nanoscale resolution, and in particular to a technique of achieving nanoscale resolution in three dimensions using light.
Patterning in three dimensions has important applications in photonic devices and micromachines. Three dimensional (3-D) micro- and nanostructures have been traditionally patterned via a layer-by-layer approach. The 3-D pattern is broken up into a series of 2-D layers, which are then overlaid on top of each other. Besides being extremely time-consuming, such approaches require very accurate overlay capabilities. Modifications to this approach via foldable and stackable membranes have also been proposed. However, the fundamental limitations still remain.
An alternative approach for 3-D nanopatterning involves 2-photon or multi-photon processes. These require extremely high light intensities. It has been difficult to achieve nanoscale resolution using multi-photon approaches because the conventional photopolymers almost always work in the UV (˜350 nm), which implies that 2 photons in the near IR (−700 nm) are required to initiate the 2-photon polymerization. The achievable resolution is given by the conventional far-field diffraction limit divided by square root of the number of photons involved. So, for a two-photon process, the minimum feature size or resolution is given by:
The improvement in resolution by √2 is effectively cancelled by the 2-fold increase in wavelength. The achievable resolution in this case is limited to several hundred nanometers.
According to one aspect of the invention, there is provided an optical material system for nanopatterning. The optical material system includes one or more material systems having spectrally selective reversible and irreversible transitions by saturating one of the spectrally selective reversible transitions with an optical node retaining a single molecule in a configuration and exposing the single molecule to its spectrally irreversible transitions to form a pattern.
According to another aspect of the invention, there is provided an optical system for nanopatterning. The optical system includes means for providing spectral energy having a plurality of different wavelengths. An optical material system includes one or more material systems having spectrally selective reversible and irreversible transitions associated with the different wavelengths. The means for providing spectral energy saturates one of the spectrally selective reversible transitions with an optical node retaining a single molecule in a configuration and exposing the single molecule to its spectrally irreversible transitions to form a pattern.
According to another aspect of the invention, there is provided a method of performing nanopatterning. The method includes providing one or more material systems having spectrally selective reversible and irreversible transitions. Also, the method includes saturating one of the spectrally selective reversible transitions with an optical node retaining a single molecule in a configuration and exposing the single molecule to its spectrally irreversible transitions to form a pattern.
The invention provides a technique of achieving nanoscale resolution in three dimensions using light. The basic idea is to use a material system that can undergo reversible photo-initiated transitions. The current invention does not require high intensities. Specific combinations of chemical species enable patterning, and the idea can be extended to 3-D nanopatterning. The idea makes use of spectrally selective reversible and irreversible transitions enabled by chemistry. By saturating one of the reversible transitions with an optical node, it is possible to retain a single molecule in one configuration compared to its neighbors. By using a separate irreversible transformation, one can fix this molecule. This approach is called patterning via optical-saturable transitions (POST).
A material system 2 and the desired photo-initiated transitions are illustrated in
A material system that undergoes photoinduced reversible as well as irreversible transformations can be used to achieve single-molecule resolution in 2-D patterning. This is illustrated by a sequence of steps in
Then, the sample is moved with respect to the 2-D node 12 at λ2 to a different location as shown and the three steps 1-3 are repeated as shown for steps 4-6 and steps 7-9. Permanent patterns in state C are formed as shown in
In order to apply this material system that undergoes reversible photo-initiated transitions to 3-D nanopatterning, the following sequence of steps is required. These steps are illustrated in
The sample is then moved with respect to the 3-D node 38 at λ2 to a different location and the three steps 21-23 are repeated as shown in steps 24-26, steps 27-29, and steps 30-32. By moving in all 3 dimensions, permanent patterns in state C can be formed as shown in
This technique of using reversible and irreversible photoinduced transitions for nanopatterning is significant. The invention overcomes the far-field diffraction limit in optical patterning. Also, the invention does not require high-intensity ratios compared to absorbance modulation or high absolute intensities, since the saturation of the B→A transition is dependent on the deposited energy (intensity×time). So, even at low intensities, with sufficient exposure time, single-molecule resolution can be attained as long as the node is sufficiently dark. A large array of nodes, such as from standing waves (in 1-D) or from an array of dichromats or other optical elements (in 2-D), can enable this nanopatterning in a massively parallel fashion. Since a good quality node is only required at λ2, whereas the other two wavelengths involve uniform illumination, the optical system should be relatively simple.
A rendering of the pattern in 3-D is shown in
An alternative approach is to use a two-material mixture system. As illustrated in
This material system 88 having two layers 74, 76 can be used to perform 2-D patterning with single-molecule resolution as illustrated in
These four steps 61-64 are repeated after moving the sample with respect to the node 84 by the requisite distance as shown in steps 65-68 and steps 69-72. By moving the node 84 in all 3 dimensions, 3-D patterns, again down to single-molecule resolution can be achieved. The sequence of steps is analogous to those illustrated in
Any thermally-stable photochromic system (AIB) containing electroactive moieties will qualify for use in the system described herein. Specifically, the thermally stable photochromic system must display an increase in conjugation length upon illumination with λ1 and, conversely, a decrease in conjugation length upon illumination with λ2. In the specific case detailed in the above scheme, bithienylethene (BTB) serves as the photochromic system.
Component C must be a photoactivated reductant or oxidant so that a redox reaction does not occur between components A, B and C in the absence of a specific photon input. In the case detailed above, ruthenium tris(bipyridine) dichloride (Ru(bpy)3Cl2) serves as a photooxidant. A metal-to-ligand charge transfer (MLCT) transition in Ru(bpy)3Cl2 is selectively excited at 465 nm, thus creating both a ruthenium center that is a strong electron acceptor and a bipyridine radical anion that can act as an electron donor.
Due to the presence of bithiophene moieties in BTE (that are easily oxidized), the excited Ru(bpy)3Cl2 can act as a one-electron electron acceptor. However, in state A, the oxidation potential of the bithiophene arms is too high for electron transfer to occur. Upon transformation to state B, however, the oxidation potential of the photochrome is lowered by approximately 0.5 V and the electron transfer reaction from BTE (B) to Ru(bpy)3Cl2 is energetically favorable. The complex product (D) is preferentially dissolved in methanol after all the patterning is completed.
Additionally, we predict that BTE (B) will liberate two electrons sequentially to form the stable dication shown above. Thus, the stiochiometry of the redox reaction requires two ruthenium complexes per photochrome.
A third alternative set of transitions is illustrated in
The sequence of steps to use the above material system for 2-D nanopatterning is illustrated in
The sample is moved relative to the node 126 as shown and the above five steps 101-105 are repeated as shown in steps 106-110 and steps 111-115. Patterns with single-molecule resolution are formed as indicated in
The node is critical to achieving single-molecule resolution. However, its quality is not as significant as one might expect. This is illustrated schematically in
The invention allows for the implementation of optical systems to demonstrate 3-D nanopatterning. Two optical systems 150, 190 are illustrated in
The computer control module 157 also controls the light sources 152, 154, 156 and SLM 182. This allows for control when each of the light sources 152, 154, 156 is active for exposure.
Also, the optical system 200 can be augmented with fringe locking and fringe shifting capabilities to perform multiple exposures. If the standing wave at λ2 can be moved with nanometer precision relative to its previous position, it is possible to pattern lines spaced with varying nanometric distances within the 1-D period of the standing wave. Furthermore, simply varying the exposure times of λ2 can vary the linewidths. Limited 2-D patterning can be achieved by rotating the sample with respect to the axis of the Lloyd's mirror 236. This would enable patterning of complex geometries in 2-D at the macro-molecular resolution with periodic boundary conditions over large areas in an inexpensive and quick fashion. Applications of this technology include 2-D and 3-D (via layer-by-layer approach) metamaterials, photonic crystals, scaffolds for tissue engineering, or the like.
Although the present invention has been shown and described with respect to several preferred embodiments thereof, various changes, omissions and additions to the form and detail thereof, may be made therein, without departing from the spirit and scope of the invention.
This application claims priority from provisional application Ser. No. 61/164,602 filed Mar. 30, 2009, which is incorporated herein by reference in its entirety.
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Number | Date | Country | |
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20100248159 A1 | Sep 2010 | US |
Number | Date | Country | |
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61164602 | Mar 2009 | US |