PEROVSKITE CELL WITH MULTIPLE HOLE TRANSPORT LAYERS AND PREPARATION METHOD THEREOF

Abstract

A method for preparing a perovskite cell with multiple hole transport layers is described. The method includes a process of forming the multiple hole transport layers, where the process of forming the multiple hole transport layers includes the following steps: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer, where the first atmosphere contains argon and oxygen, and a volume ratio of the argon to the oxygen is approximately 0:1 to 1.5: 1; (2) performing annealing treatment on the first hole transport layer; and (3) sputtering the nickel oxide target material onto the first hole transport layer subjected to the annealing treatment in a second atmosphere to form a second hole transport layer, where the second atmosphere contains argon-containing gas and oxygen. A perovskite cell (100) with multiple hole transport layers prepared by using the above method is described.

Description

Claims

1. A method for preparing a perovskite cell with multiple hole transport layers, comprising a process of forming the multiple hole transport layers, wherein the process of forming the multiple hole transport layers comprises the following steps: (1) sputtering a nickel oxide target material in a first atmosphere to form a first hole transport layer, wherein the first atmosphere contains argon and oxygen, and a volume ratio of the argon to the oxygen is approximately 0:1 to 1.5: 1;(2) performing annealing treatment on the first hole transport layer; and(3) sputtering the nickel oxide target material onto the first hole transport layer subjected to the annealing treatment in a second atmosphere to form a second hole transport layer, wherein the second atmosphere contains argon-containing gas and oxygen, a volume ratio of the argon-containing gas to the oxygen is approximately 1:0 to 4:1, and the argon-containing gas contains argon, and optionally hydrogen.

2. The method according to claim 1, wherein purity of nickel oxide is approximately 95 wt% or more.

3. The method according to claim 1, wherein magnetron sputtering is used in step (1) and/or step (3).

4. The method according to claim 1, wherein a thickness of the first hole transport layer and/or the second hole transport layer is approximately 5-50 nm.

5. The method according to claim 1, wherein the volume ratio of the argon to the oxygen in the first atmosphere is approximately 0:1 to 1:1.

6. The method according to claim 1, wherein in step (2), the annealing treatment is performed for approximately 1-45 min under a temperature of 200-500° C.

7. The method according to claim 1, wherein in step (2), the annealing treatment is performed under vacuum.

8. The method according to claim 1, wherein in step (2), the annealing treatment is performed in a magnetron sputtering device under a temperature of approximately 250-450° C. for approximately 5-40 min.

9. The method according to claim 1, wherein the volume ratio of the argon-containing gas to the oxygen in the second atmosphere is approximately 1:0 to 5:1.

10. The method according to claim 1, wherein the argon-containing gas contains argon and hydrogen, and a volume ratio of the argon to the hydrogen is approximately 90:10 to 99:1.

11. The method according to claim 1, wherein the argon-containing gas contains the argon and the hydrogen, and the volume ratio of the argon to the hydrogen is approximately 95:5.

12. The method according to claim 1, wherein in step (1) and/or in step (3), a sputtering power is approximately 300 W-10 kW, and an atmospheric pressure is approximately 1 × 10-4-100 Pa.

13. The method according to claim 1, further comprising at least one of the following steps: providing a transparent substrate;forming a transparent conductive layer on the transparent substrate;forming the multiple hole transport layers on the transparent conductive layer (104);forming a perovskite layer on the outermost layer of the multiple hole transport layers;forming an electron transport layer on the perovskite layer; andforming a back electrode on the electron transport layer.

14. The method according to claim 1, further comprising at least one of the following steps: providing a transparent substrate;forming a transparent conductive layer on the transparent substrate;forming an electron transport layer on the transparent conductive layer (104);forming a perovskite layer on the electron transport layer;forming the multiple hole transport layers on the perovskite layer; andforming a back electrode on the outermost layer of the multiple hole transport layers.

15. A perovskite cell (100) prepared by using the method according to claim 1, wherein the cell comprises multiple hole transport layers, and the multiple hole transport layers comprise at least a first hole transport layer (106) and a second hole transport layer (108).

16. The perovskite cell (100) according to claim 15, wherein the cell sequentially comprises a transparent substrate (102), a transparent conductive layer (104), the multiple hole transport layers, a perovskite layer (110), an electron transport layer (120), and a back electrode (140), or sequentially comprises a transparent substrate (102), a transparent conductive layer (104), an electron transport layer (120), a perovskite layer (110), the multiple hole transport layers, and a back electrode (140).

17. The perovskite cell (100) according to claim 15, wherein the multiple hole transport layers are a double-layer nickel oxide film composed of the first hole transport layer (106) and the second hole transport layer, and the film is about 10-100 nm thick.

18. The perovskite cell (100) according to claim 16, wherein the transparent conductive layer (104) is selected from one or more of indium tin oxide (ITO) and fluorine-doped tin dioxide (FTO).

19. The perovskite cell (100) according to claim 16, wherein the electron transport layer (120) is selected from one or more of [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM), C60, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), and SnO2.

20. The perovskite cell (100) according to claim 16, wherein the back electrode (140) is selected from one or more of ITO, tungsten-doped indium oxide (IWO), AZO, Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, and Mg.

21. The perovskite cell (100) according to claim 16, wherein the transparent substrate (102) is made of glass.

22. The perovskite cell (100) according to claim 16, wherein the perovskite layer (110) contains one or more of CH3NH3PbI3, CH3NH3PbI3-xClx, and CH3NH3PbI3-xBrx, and 0<x<3.