Patent Application
20230284467
The present application belongs to the technical field of solar batteries, and specifically relates to a perovskite solar battery and a photovoltaic assembly.
With the development of modern industry, the problems of global energy shortage and environmental pollution have become increasingly prominent, and solar batteries have attracted more and more attentions as an ideal renewable energy source. A solar battery, also known as a photovoltaic battery, is an apparatus that directly converts light energy into electrical energy through photoelectric effects or photochemical effects. Improving the photoelectric conversion efficiency of solar batteries has always been the striving direction of researchers. A perovskite solar battery is a solar battery in which a perovskite material is used as a light absorbing layer, which has rapidly achieved high photoelectric conversion efficiency within a few years after emergence, and has attracted extensive attentions in recent years. After absorbing incident sunlight, the perovskite material will be excited to generate electron-hole pairs, and then the electron-hole pairs are separated into electrons and holes, which will be transported to the cathode and the anode, respectively. How to accelerate the transport of holes and prevent the recombination of electrons and holes is crucial for improving the photoelectric conversion efficiency of the perovskite solar battery.
An object of the present application is to provide a perovskite solar battery and a photovoltaic assembly, so as to improve the hole extraction and transport efficiency of the hole transport layer, improve the open voltage and current of the perovskite solar battery, and improve the photoelectric conversion efficiency and service life of the perovskite solar battery.
A first aspect of the present application provides a perovskite solar battery, including a first electrode, a second electrode, and a light absorbing layer between the first electrode and the second electrode, where the perovskite solar battery further includes a first hole transport layer and a second hole transport layer, where the first hole transport layer is located between the second hole transport layer and the light absorbing layer, and the second hole transport layer is located between the first electrode and the light absorbing layer, or the second hole transport layer is located between the second electrode and the light absorbing layer. A first hole transport material of the first hole transport layer is one selected from PTAA, and nickel oxide that is doped with a first doping element or is undoped, and a second hole transport material of the second hole transport layer includes at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material capable of isolating water and oxygen.
In the perovskite solar battery of the present application, the first hole transport material is close to the light absorbing layer, and can efficiently extract holes in the light absorbing layer. The second hole transport material has better surface wettability and better film-forming properties, thereby contributing to improving the bonding strength between the whole hole transport layer and the electrode. The second hole transport material further can form a protective passivation layer on the surface of the first hole transport layer to passivate the surface of the first hole transport layer and prevent the first hole transport material from being denatured or degraded due to contact with air. In addition, the protective passivation layer further can isolate water and oxygen to prevent water and oxygen from corroding the first hole transport material, thereby making better use of the hole extraction and transport capability of the first hole transport material. The second hole transport material further can improve the overall conductivity performance of the hole transport layer, thereby further improving the hole extraction and transport efficiency. The second hole transport material has fewer internal defects within the crystal, and further can block the further migration of charged halogen ions, thereby improving the stability of the perovskite solar battery. Therefore, the present application can effectively reduce the recombination of electrons and holes, and improve the hole extraction and transport efficiency, to transport more holes to one of the first electrode and the second electrode, thereby further improving the open voltage and current of the perovskite solar battery, and improving the photoelectric conversion efficiency and service life of the perovskite solar battery.
In any embodiment of the present application, a difference value ΔVBM1 between a top energy level of a valence band of the second hole transport layer and a top energy level of a valence band of the first hole transport layer is from −1.0 eV to 1.0 eV. In the perovskite solar battery of the present application, the second hole transport layer and the first hole transport layer have suitable difference values of the top energy level of the valence band, and the whole hole transport layer has a suitable energy level gradient, thereby contributing to reducing the recombination of electrons and holes, improving hole the extraction and transport efficiency, and reducing the energy loss. A very large difference value between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer will cause excessive hole transition energy loss between energy levels. Optionally, the difference value ΔVBM1 between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer is from −0.3 eV to 0.3 eV. A smaller difference value between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer contributes to further reducing the recombination of electrons and holes, improving the hole transport efficiency, and reducing the energy loss.
In any embodiment of the present application, the first doping element includes at least one of an alkali metal element, an alkali earth metal element, a transition metal element, or a halogen element. Optionally, the alkali metal element includes at least one of Li, Na, K, Rb, or Cs. Optionally, the alkali earth metal element includes at least one of Be, Mg, Ca, Sr, or Ba. Optionally, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Ta, Pt, or Au. Optionally, the halogen element includes at least one of F, Cl, Br, or I. After nickel oxide is doped with the first doping element, the photoelectric properties of the first hole transport layer can be changed, so that the energy level of the first hole transport layer can better match the energy level of the light absorbing layer, thus improving the hole extraction efficiency, and finally improving the photoelectric conversion efficiency of the perovskite solar battery.
In any embodiment of the present application, based on a total mass of the first hole transport material, a mass percentage content of the first doping element is less than or equal to 20%. Optionally, the mass percentage content of the first doping element is from 5% to 15%. Selecting an appropriate doping amount contributes to better adjustment of the energy band position of the first hole transport layer. If the mass percentage content of the first doping element is very high, the crystal structure of nickel oxide may be damaged, thus resulting in a large deviation of the energy band structure, and affecting the hole extraction and transport capability of the first hole transport layer.
In any embodiment of the present application, the second hole transport material includes at least one of: MoO3, CuO, Cu2O, CuI, NiMgLiO, CuGaO2, CuGrO2, or CoO that is doped with a second doping element or is undoped. These hole transport materials can better isolate water and oxygen, inhibit the corrosion of water and oxygen to the first hole transport material, and improve the hole transport efficiency.
In any embodiment of the present application, the second doping element includes at least one of an alkali metal element, an alkali earth metal element, a transition metal element, a metal-poor element, a metalloid element, a halogen element, a nonmetallic element, an ionic liquid, a carboxylic acid, phosphoric acid, a carbon derivative, a self-assembled monomolecule, or a polymer. Optionally, the alkali metal element includes at least one of Li, Na, K, Rb, or Cs. Optionally, the alkali earth metal element includes at least one of Be, Mg, Ca, Sr, or Ba. Optionally, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Ta, Pt, or Au. Optionally, the metal-poor element includes at least one of Al, Ga, In, Sn, Tl, Pb, or Bi. Optionally, the metalloid element includes at least one of B, Si, Ge, As, Sb, or Te. Optionally, the halogen element includes at least one of F, Cl, Br, or I. Optionally, the nonmetallic element includes at least one of P, S, or Se. Optionally, the ionic liquid includes at least one of 1-butyl-3-methylimidazolium tetrafluoroborate, NH4Cl, (NH4)2S, tetramethylammonium hydroxide aqueous solution, or trifluoroethanol. Optionally, the carboxylic acid includes at least one of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, 4-imidazoleacetic acid hydrochloride, or acetic acid. Optionally, the carbon derivative includes at least one of carbon quantum dot, carbon nanotube, graphene, C60, g-C3N4, C9, NPC60-OH, or DPC60. Optionally, the self-assembled monomolecule includes at least one of 2-phenethylamine hydroiodide, N,N-diethylaniline, 9,9-bis(4-aminophenyl)fluorene, 4-picolinic acid, dopamine, 3-aminopropyltriethoxysilane, and glycine. Optionally, the polymer includes at least one of styrene, polyethyleneimine, polyethylene oxide, or tris(N,N-tetramethylene)phosphoric acid triamide.
The second hole transport material can be doped to adjust the energy band position of the second hole transport layer, such that the second hole transport layer and the first hole transport layer have suitable difference values of the top energy level of the valence band and suitable energy level gradients, thereby reducing the recombination of electrons and holes, improving the hole extraction and transport efficiency, and improving the open voltage and current of the perovskite solar battery. Doping the second hole transport material further can improve its conductivity performance.
In any embodiment of the present application, based on a total mass of the second hole transport material, a mass percentage content of the second doping element is less than or equal to 30%. Optionally, the mass percentage content of the second doping element is from 5% to 25%. Selecting an appropriate doping amount contributes to better adjustment of the energy band position of the second hole transport layer, such that the second hole transport layer and the first hole transport layer have suitable difference values of the top energy level of the valence band and suitable energy level gradients, thereby reducing the recombination of electrons and holes, and improving the hole extraction and transport efficiency.
In any embodiment of the present application, a difference value ΔVBM2 between the top energy level of the valence band of the first hole transport layer and a top energy level of a valence band of the light absorbing layer is from −1.0 eV to 1.0 eV. Optionally, the difference value ΔVBM2 between the top energy level of the valence band of the first hole transport layer and the top energy level of the valence band of the light absorbing layer is from −0.3 eV to 0.3 eV. The difference value between the top energy level of the valence band of the first hole transport layer and the top energy level of the valence band of the light absorbing layer in an appropriate range contributes the first hole transport layer to more efficiently extracting holes in the light absorbing layer.
In any embodiment of the present application, a difference value between a top energy level of a conduction band of the second hole transport layer and a top energy level of a conduction band of the light absorbing layer is greater than or equal to 0.5 eV. The difference value between the top energy level of the conduction band of the second hole transport layer and the top energy level of the conduction band of the light absorbing layer in an appropriate range can block the electron transport, and reduce the recombination of electrons and holes.
In any embodiment of the present application, a difference value between a top energy level of a conduction band of the first hole transport layer and the top energy level of the conduction band of the light absorbing layer is greater than or equal to 0.5 eV. The difference value between the top energy level of the conduction band of the first hole transport layer and the top energy level of the conduction band of the light absorbing layer in an appropriate range can block the electron transport, and reduce the recombination of electrons and holes.
In any embodiment of the present application, a difference value between a Fermi level and the top energy level of the valence band of the second hole transport layer is less than or equal to 1.5 eV. A small difference value between the Fermi level and the top energy level of the valence band of the second hole transport layer can guarantee that the second hole transport layer has better P-type semiconductor properties, and facilitate improving the hole transport capability.
In any embodiment of the present application, a difference value between a Fermi level and the top energy level of the valence band of the first hole transport layer is less than or equal to 1.5 eV. A small difference value between the Fermi level and the top energy level of the valence band of the first hole transport layer can guarantee that the first hole transport layer has better P-type semiconductor properties, and facilitate improving the hole extraction and transport capability.
In any embodiment of the present application, a band gap of the second hole transport layer is greater than or equal to 1.5 eV. The second hole transport layer with a large band gap can better filter ultraviolet light, and reduce the damage of the ultraviolet light to a light absorbing material.
In any embodiment of the present application, thickness of the second hole transport layer is from 1 nm to 300 nm. Optionally, the thickness of the second hole transport layer is from 1 nm to 100 nm.
In any embodiment of the present application, thickness of the first hole transport layer is from 5 nm to 1,000 nm. Optionally, the thickness of the first hole transport layer is from 10 nm to 200 nm.
In any embodiment of the present application, a ratio of the thickness of the first hole transport layer to the thickness of the second hole transport layer is from 1:1 to 10:1. Compared with the first hole transport layer, the second hole transport layer is thinner, and can form a more compact and more stable film, thereby contributing to improving the hole transport rate.
In any embodiment of the present application, the light absorbing layer comprises a perovskite material.
In any embodiment of the present application, one of the first electrode and the second electrode is a transparent electrode. Optionally, the transparent electrode is an FTO electrode or an ITO electrode.
In any embodiment of the present application, one of the first electrode and the second electrode is a metal electrode or a conductive carbon electrode. Optionally, the metal electrode is selected from one or more of a gold electrode, a silver electrode, an aluminum electrode, and a copper electrode.
In any embodiment of the present application, the perovskite solar battery further includes an electron transport layer, the electron transport layer is located between the light absorbing layer and the second electrode or the first electrode, and the light absorbing layer is located between the first hole transport layer and the electron transport layer. The electron transport layer can reduce a potential barrier between the electrode and the light absorbing layer, promote the transport of electrons, effectively block holes, and inhibit the recombination of electrons and holes.
A second aspect of the present application provides a photovoltaic assembly, comprising the perovskite solar battery in the first aspect of the present application.
The photovoltaic assembly of the present application comprises the perovskite solar battery provided in the present application, and thus has at least the same advantages as the perovskite solar battery.
In order to more clearly illustrate the technical solutions in examples of the present application, the accompanying drawings to be used in the examples of the present application will be briefly introduced below. Apparently, the drawings described below are merely some embodiments of the present application. For those of ordinary skills in the art, other drawings may also be obtained based on these drawings without making creative work.
Embodiments of a perovskite solar battery and a photovoltaic assembly of the present application are specifically disclosed below with reference to detailed description of the accompanying drawings. However, unnecessary detailed description will be omitted in some cases. For example, there are cases where detailed descriptions of well-known items and repeated descriptions of actually identical structures are omitted. This is to avoid unnecessary redundancy in the following descriptions and to facilitate the understanding by those skilled in the art. In addition, the drawings and subsequent descriptions are provided for those skilled in the art to fully understand the present application, and are not intended to limit the subject matter recited in the claims.
“Ranges” disclosed in the present application are defined in the form of lower limits and upper limits, a given range is defined by the selection of a lower limit and an upper limit, and the selected lower and upper limits define boundaries of the particular range. A range defined in this manner may be inclusive or exclusive of end values, and may be arbitrarily combined, that is, any lower limit may be combined with any upper limit to form a range. For example, if the ranges of 60-120 and 80-110 are listed for a particular parameter, it is understood that the ranges of 60-110 and 80-120 are also contemplated. Additionally, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4, and 5 are listed, the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless stated otherwise, the numerical range “a-b” represents an abbreviated representation of any combination of real numbers between a and b, where both a and b are real numbers. For example, the numerical range “0-5” means that all real numbers between “0-5” have been listed herein, and “0-5” is just an abbreviated representation of the combination of these numerical values. In addition, when a parameter is expressed as an integer greater than or equal to 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, and the like.
Unless otherwise specifically stated, all embodiments and optional embodiments of the present application may be combined with each other to form new technical solutions, and such technical solutions should be considered as being included in the disclosure of the present application.
Unless otherwise specifically stated, all technical features and optional technical features of the present application may be combined with each other to form new technical solutions, and such technical solutions should be considered as being included in the disclosure of the present application.
Unless otherwise specifically stated, all steps in the present application may be performed sequentially or randomly, and are in some embodiments performed sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, reference to the method may further include step (c), indicating that step (c) may be added to the method in any order, e.g., the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b).
Unless otherwise specifically stated, the “including” and “comprising” mentioned in the present application mean open-ended. For example, “including” and “comprising” may indicate that it is possible to include or comprise other components not listed.
Unless otherwise specified, the term “or” is inclusive in the present application. By way of example, the phrase “A or B” means “A, B, or both A and B.” More specifically, the condition “A or B” is satisfied under any one of the following conditions: A is true (or present) and B is false (or absent); A is false (or absent) and B is true (or present); or both A and B are true (or present).
A perovskite solar battery is a solar battery in which a perovskite material is used as a light absorbing layer. Sunlight incident to the light absorbing layer is immediately absorbed by the perovskite material. The energy of photons excites electrons originally bound around the nucleus, making them form free electrons, and when an electron is excited, a hole will be generated simultaneously, thereby forming an electron-hole pair. The electron-hole pairs are separated into electrons and holes, which flow to the cathode and the anode of the perovskite solar battery, respectively. The process of electron and hole transport is inevitably accompanied with the loss of some current carriers, such as the recombination of electrons and holes. The hole transport layer is an important functional layer of the perovskite solar battery, and functions for extracting and transporting holes, whist blocking electrons, and preventing the recombination of electrons and holes, and is crucial for improving the photoelectric conversion efficiency of the perovskite solar battery.
In a hole transport layer of the perovskite solar battery, nickel oxide (NiOx) is generally used as an inorganic hole transport material, and poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) is generally used as an organic hole transport material. The two materials are inexpensive, and have high structural stability. Nickel oxide and PTAA further have suitable work functions and energy band positions, and can better match the energy level structure of the perovskite material in the light absorbing layer, to guarantee the hole extraction and transport. However, nickel oxide and PTAA have poor surface wettability after film formation, which affects the quality of the film layer. In addition, Ni3+ in the bulk phase of nickel oxide after film formation enables it to conduct hole conduction, and a part of the Ni3+ existing on the surface easily reacts with oxygen in the environment to generate NiO and NiOOH, thereby not only increasing the surface resistivity of the hole transport layer, but also failing to contribute to the hole extraction and transport. As a polymer-type hole transport material, PTAA generally has a high resistivity, and fails to contribute to the hole extraction and transport.
In view of the above problems, the inventors improved the structure of the hole transport layer.
A first aspect of embodiments of the present application provides a perovskite solar battery.
A first hole transport material of the first hole transport layer 21 is one selected from PTAA, and nickel oxide that is doped with a first doping element or is undoped. A second hole transport material of the second hole transport layer 22 is selected from at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material capable of isolating water and oxygen.
The first hole transport material is close to the light absorbing layer, and can efficiently extract holes in the light absorbing layer, while the second hole transport material has better surface wettability and better film-forming properties, thereby contributing to improving the bonding strength between the whole hole transport layer and the electrode (e.g., the first electrode or the second electrode).
The second hole transport material further can form a protective passivation layer on the surface of the first hole transport layer to passivate the surface of the first hole transport layer, and prevent the first hole transport material from being denatured or degraded due to contact with air (e.g., a part of the Ni3+ existing on the surface of nickel oxide easily reacts with oxygen in the environment to generate NiO and NiOOH), thereby affecting the hole extraction and transport by the first hole transport layer. A second hole transport material is selected from at least one of a P-type transition metal oxide semiconductor material or a P-type transition metal halide semiconductor material capable of isolating water and oxygen. Therefore, the second hole transport material further can inhibit the corrosion of water and oxygen to the first hole transport material (e.g., PTAA or nickel oxide). Therefore, after the first hole transport layer and the second hole transport layer are recombined, the hole extraction and transport capability of the first hole transport layer can be better used. Ni2+ and oxygen vacancies existing on the shallow surface of nickel oxide after film formation will reduce the quantity of electric charge, and fail to contribute to the hole extraction and transport. Transition metal cations in the second hole transport material can diffuse into the shallow surface of nickel oxide to a certain extent, and function for supplementing related charge losses and vacancies, passivating the surface of nickel oxide, and isolating water and oxygen, so as to make better use of the hole extraction and transport capability of nickel oxide.
After forming the protective passivation layer on the surface of nickel oxide, the second hole transport material further can reduce the surface resistivity of nickel oxide, and improve the surface conductivity performance of the first hole transport layer and the overall conductivity performance of the hole transport layer, thereby further improving the hole extraction and transport efficiency. In addition, as the polymer-type hole transport material, PTAA generally has a high resistivity, and can, after recombination of the first hole transport layer and the second hole transport layer, improve the overall conductivity performance of the hole transport layer, thereby further improving the hole extraction and transport efficiency.
A light absorbing material of the perovskite solar battery is generally a halide perovskite material (e.g., an inorganic halide perovskite material, an organic halide perovskite material, or an organic-inorganic hybrid halide perovskite material), and has attracted extensive attentions due to its advantages, such as large carrier diffusion length, easily regulatable band gap, high defect tolerance, and low manufacturing costs. However, the halide perovskite material itself has poor stability, and tends to decompose under the action of water and oxygen, thereby accelerating the aging of the perovskite solar battery. Ion migration is another important property of the halide perovskite material. The migration and accumulation of charged ions will lead to significant changes of the doping concentration of the light absorbing layer and the built-in electric field, and even will cause local crystal structure changes. Ion migration and aggregation further may cause local chemical doping effects, change the Fermi level of the ion aggregation region, and bend the energy level, thus affecting the separation, transport, and extraction of photo-generated carriers. There is a close relation between ion migration and defects. Internal defects of crystal provide a migration route for ions. In the perovskite solar battery of embodiments of the present application, the second hole transport material has fewer internal defects of crystal, and compared with the first hole transport layer, the second hole transport layer is more compact and more stable, and can block the further migration of charged halogen ions, thereby improving the stability of the perovskite solar battery.
Therefore, the perovskite solar battery of the present application can effectively reduce the recombination of electrons and holes, and improve the extraction and transport efficiency of holes, to transport more holes to one of the first electrode and the second electrode, thereby further improving the open voltage and current of the perovskite solar battery, and improving the photoelectric conversion efficiency and service life of the perovskite solar battery.
In some embodiments, the first hole transport material is selected from nickel oxide that is doped with the first doping element. After nickel oxide is doped with the first doping element, the photoelectric properties, such as the transparency, energy band structure, work function, carrier density, and conductivity, of the first hole transport layer can be changed, so that an energy level of the first hole transport layer can better match an energy level of the light absorbing layer, thus improving the hole extraction efficiency, and finally improving the photoelectric conversion efficiency of the perovskite solar battery.
In some embodiments, the first doping element includes at least one of an alkali metal element, an alkali earth metal element, a transition metal element, or a halogen element. Selecting an appropriate first doping element contributes to better adjustment of the energy band position of the first hole transport layer.
As an example, the alkali metal element includes at least one of Li, Na, K, Rb, or Cs. Optionally, the alkali metal element includes at least one of Li, Na, or K.
As an example, the alkali earth metal element includes at least one of Be, Mg, Ca, Sr, or Ba. Optionally, the alkali earth metal element includes at least one of Be, Mg, or Ca. Further, the alkali earth metal element includes Mg.
As an example, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Ta, Pt, or Au. Optionally, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Cu, or Mo. Further, the transition metal element includes at least one of Co or Cu.
As an example, the halogen element includes at least one of F, Cl, Br, or I. Optionally, the halogen element includes at least one of F or Cl.
The form of the first doping element is not particularly limited, for example, may be in the form of atoms, molecules, or ions. As an example, a precursor for forming the first doping element includes, but is not limited to, at least one of an alkali metal element, an alkali earth metal element, a transition metal element, a halogen element, an alkali metal halide, an alkali earth metal halide, and a transition metal halide.
In some examples, based on a total mass of the first hole transport material, a mass percentage content of the first doping element is less than or equal to 20%. For example, the mass percentage content of the first doping element is 0%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, or 20%, or a range composed of the above values. Optionally, the mass percentage content of the first doping element is 1%-20%, 2%-20%, 3%-20%, 4%-20%, 5%-20%, 1%-15%, 2%-15%, 3%-15%, 4%-15%, 5%-15%, 1%-10%, 2%-10%, 3%-10%, 4%-10%, 1%-5%, 2%-5%, 3%-5%, or 4%-5%. Selecting an appropriate doping amount contributes to better adjustment of the energy band position of the first hole transport layer. If the mass percentage content of the first doping element is very high, the crystal structure of nickel oxide may be damaged, thus resulting in a large deviation of the energy band structure, and affecting the hole extraction and transport capability of the first hole transport layer.
The type and content of the first doping element may be selected as required, and the first doping element may be of one type or a combination of multiple types.
In some examples, the second hole transport material of the second hole transport layer 22 includes at least one of: MoO3, CuO, Cu2O, CuI, NiMgLiO, CuGaO2, CuGrO2, or CoO that is doped with a second doping element or is undoped. These hole transport materials can better isolate water and oxygen, inhibit the corrosion of water and oxygen to the first hole transport material (e.g., PTAA and nickel oxide), and improve the hole transport efficiency. Transition metal cations in these hole transport materials are close to the radius of a nickel ion, can better diffuse into the shallow surface of nickel oxide, and function for supplementing related charge losses and vacancies, passivating the surface of nickel oxide, and isolating water and oxygen.
Optionally, the second hole transport material of the second hole transport layer 22 includes at least one of: MoO3, CuI, or NiMgLiO that is doped with the second doping element or is undoped.
In some examples, the second hole transport material is doped with the second doping element. The second hole transport material can be doped to adjust the energy band position of the second hole transport layer, such that the second hole transport layer and the first hole transport layer have suitable difference values of the top energy level of the valence band and suitable energy level gradients, thereby reducing the recombination of electrons and holes, improving the hole extraction and transport efficiency, and improving the open voltage and current of the perovskite solar battery. Doping the second hole transport material further can improve its conductivity performance.
In some examples, the second doping element includes at least one of an alkali metal element, an alkali earth metal element, a transition metal element, a metal-poor element, a metalloid element, a halogen element, a nonmetallic element, an ionic liquid, a carboxylic acid, phosphoric acid, a carbon derivative, a self-assembled monomolecule, or a polymer. Selecting an appropriate second doping element contributes to better adjustment of the energy band position of the second hole transport layer.
As an example, the alkali metal element includes at least one of Li, Na, K, Rb, or Cs. Optionally, the alkali metal element includes at least one of Li, Na, or K.
As an example, the alkali earth metal element includes at least one of Be, Mg, Ca, Sr, or Ba. Optionally, the alkali earth metal element includes at least one of Be, Mg, or Ca. Further, the alkali earth metal element includes Mg.
As an example, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Ta, Pt, or Au. Optionally, the transition metal element includes at least one of Ti, Cr, Mn, Fe, Co, Ni, Cu, or Mo. Further, the transition metal element includes at least one of Co or Cu.
As an example, the metal-poor element includes at least one of Al, Ga, In, Sn, Tl, Pb, or Bi. Optionally, the metal-poor element includes at least one of Al or Ca. Further, the metal-poor element includes Al.
As an example, the metalloid element includes at least one of B, Si, Ge, As, Sb, or Te. Optionally, the metalloid element includes at least one of B or Sb. Further, the metalloid element includes B.
As an example, the halogen element includes at least one of F, Cl, Br, or I. Optionally, the halogen element includes at least one of F or Cl.
As an example, the nonmetallic element includes at least one of P, S, or Se. Optionally, the nonmetallic element includes P.
As an example, the ionic liquid includes at least one of 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF4), NH4Cl, (NH4)2S, tetramethylammonium hydroxide aqueous solution (TMAH), or trifluoroethanol. Optionally, the ionic liquid includes at least one of BMIMBF4 or NH4Cl. Further, the ionic liquid includes NH4Cl.
As an example, the carboxylic acid includes at least one of ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), 4-imidazoleacetic acid hydrochloride (ImAcHCl), or acetic acid. Optionally, the carboxylic acid includes EDTA.
As an example, the carbon derivative includes at least one of carbon quantum dot, carbon nanotube, graphene, C60, g-C3N4, C9, NPC60-OH, or DPC60. Optionally, the carbon derivative includes the carbon quantum dot.
As an example, the self-assembled monomolecule includes at least one of 2-phenylethylamine hydroiodide (PEAI), N,N-diethylaniline (DEA), 9,9-bis(4-aminophenyl)fluorene (FDA), 4-picolinic acid, dopamine, 3-aminopropyltriethoxysilane (APTES), or glycine. Optionally, the self-assembled monomolecule includes at least one of PEAI, DEA, FDA, or dopamine. Further, the self-assembled monomolecule includes PEAI.
As an example, the polymer includes at least one of polystyrene (PS), polyethyleneimine (PEIE), polyethylene oxide (PEO), or tris(N,N-tetramethylene)phosphoric acid triamide (TPPO). Optionally, the polymer includes PEIE.
The form of the second doping element is not particularly limited, for example, may be in the form of atoms, molecules, or ions. As an example, a precursor for forming the second doping element includes, but is not limited to, at least one of an alkali metal element, an alkali earth metal element, a transition metal element, a metal-poor element, a metalloid element, a halogen element, a nonmetallic element, an ionic liquid, a carboxylic acid, phosphoric acid, a carbon derivative, a self-assembled monomolecule, a polymer, an alkali metal halide, an alkali earth metal halide, a transition metal halide, a metal-poor halide, or a metalloid halide.
In some examples, based on a total mass of the second hole transport material, a mass percentage content of the second doping element is less than or equal to 30%. For example, the mass percentage content of the second doping element is 0%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, or 30%, or a range composed of the above values. Optionally, the mass percentage content of the second doping element is 1%-30%, 2%-30%, 3%-30%, 4%-30%, 5%-30%, 1%-25%, 2%-25%, 3%-25%, 4%-25%, 5%-25%, 1%-20%, 2%-20%, 3%-20%, 4%-20%, 5%-20%, 1%-15%, 2%-15%, 3%-15%, 4%-15%, 5%-15%, 1%-10%, 2%-10%, 3%-10%, 4%-10%, 1%-5%, 2%-5%, 3%-5%, or 4%-5%. Selecting an appropriate doping amount contributes to better adjustment of the energy band position of the second hole transport layer, such that the second hole transport layer and the first hole transport layer have suitable difference values of the top energy level of the valence band and suitable energy level gradients, thereby reducing the recombination of electrons and holes, and improving the hole extraction and transport efficiency. If the mass percentage content of the second doping element is very high, the crystal structure of the second hole transport material may be damaged, thus resulting in a large deviation of the energy band structure, and affecting the performance of the second hole transport layer.
The type and content of the second doping element may be selected as required, and the second doping element may be of one type or a combination of multiple types.
In some examples, a difference value ΔVBM1 between a top energy level of a valence band of the second hole transport layer 22 and a top energy level of a valence band of the first hole transport layer 21 is from −1.0 eV to 1.0 eV. In the perovskite solar battery, efficient hole transport depends on good energy level matching between the light absorbing layer/the hole transport layer. In the perovskite solar battery of embodiments of the present application, the whole hole transport layer has an appropriate energy level gradient, and the difference value ΔVBM1 between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer is from −1.0 eV to 1.0 eV. The second hole transport layer and the first hole transport layer having appropriate difference values of the top energy level of the valence band can effectively reduce the recombination of electrons and holes, and improve the extraction and transport efficiency of holes, to transport more holes to one of the first electrode and the second electrode, thereby further improving the open voltage and current of the perovskite solar battery, and improving the photoelectric conversion efficiency and service life of the perovskite solar battery. A very large difference value between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer will cause excessive hole transition energy loss between energy levels. For example, in some cases, excess phonons will be generated, thereby not only consuming the electric charge energy, but also affecting the thermal stability of the perovskite solar battery.
In some examples, the difference value ΔVBM1 between the top energy level of the valence band of the second hole transport layer 22 and the top energy level of the valence band of the first hole transport layer 21 is −0.8 eV-0.8 eV, −0.7 eV-0.7 eV, −0.6 eV-0.6 eV, −0.5 eV-0.5 eV, −0.4 eV-0.4 eV, or −0.3 eV-0.3 eV. A smaller difference value between the top energy level of the valence band of the second hole transport layer and the top energy level of the valence band of the first hole transport layer contributes to further reducing the recombination of electrons and holes, improving the hole transport efficiency, and reducing the energy loss.
In some examples, a difference value ΔVBM2 between the top energy level of the valence band of the first hole transport layer 21 and a top energy level of a valence band of the light absorbing layer 3 is from −1.0 eV to 1.0 eV. Optionally, the difference value ΔVBM2 between the top energy level of the valence band of the first hole transport layer 21 and the top energy level of the valence band of the light absorbing layer 3 is −0.8 eV-0.8 eV, −0.7 eV-0.7 eV, −0.6 eV-0.6 eV, −0.5 eV-0.5 eV, −0.4 eV-0.4 eV, or −0.3 eV-0.3 eV. The difference value between the top energy level of the valence band of the first hole transport layer and the top energy level of the valence band of the light absorbing layer in an appropriate range contributes the first hole transport layer to more efficiently extracting holes in the light absorbing layer.
In some examples, a difference value between a top energy level of a conduction band of the second hole transport layer 22 and a top energy level of a conduction band of the light absorbing layer 3 is greater than or equal to 0.5 eV. The difference value between the top energy level of the conduction band of the second hole transport layer and the top energy level of the conduction band of the light absorbing layer in an appropriate range can block the electron transport, and reduce the recombination of electrons and holes.
In some examples, the difference value between the top energy level of the conduction band of the first hole transport layer 21 and the top energy level of the conduction band of the light absorbing layer 3 is greater than or equal to 0.5 eV. The difference value between the top energy level of the conduction band of the first hole transport layer and the top energy level of the conduction band of the light absorbing layer in an appropriate range can block the electron transport, and reduce the recombination of electrons and holes.
In some examples, a difference value between a Fermi level and the top energy level of the valence band of the second hole transport layer 22 is less than or equal to 1.5 eV. A small difference value between the Fermi level and the top energy level of the valence band of the second hole transport layer can guarantee that the second hole transport layer has better P-type semiconductor properties, and facilitate improving the hole transport capability.
In some examples, a difference value between a Fermi level and the top energy level of the valence band of the first hole transport layer 21 is less than or equal to 1.5 eV. A small difference value between the Fermi level and the top energy level of the valence band of the first hole transport layer can guarantee that the first hole transport layer has better P-type semiconductor properties, and facilitate improving the hole extraction and transport capability.
In some examples, a band gap of the second hole transport layer 22 is greater than or equal to 1.5 eV. The second hole transport layer with a large band gap can better filter ultraviolet light, and reduce the damage of the ultraviolet light to a light absorbing material (e.g., perovskite material).
Thickness of the first hole transport layer 21 is not specifically limited, and may be selected based on actual requirements. In some examples, the thickness of the first hole transport layer 21 is from 5 nm to 1,000 nm. Optionally, the thickness of the first hole transport layer 21 is from 10 nm to 200 nm.
Thickness of the second hole transport layer 22 is not specifically limited, and may be selected based on actual requirements. In some examples, the thickness of the second hole transport layer 22 is from 1 nm to 300 nm. Optionally, the thickness of the second hole transport layer 22 is from 1 nm to 100 nm.
In some examples, a ratio of the thickness of the first hole transport layer 21 to the thickness of the second hole transport layer 22 is from 1:1 to 10:1. Optionally, a ratio of the thickness of the first hole transport layer 21 to the thickness of the second hole transport layer 22 is 1.5:1-10:1, 2:1-10:1, 3:1-10:1, 4:1-10:1, or 5:1-10:1. Compared with the first hole transport layer, the second hole transport layer is thinner, and can form a more compact and more stable film, thereby contributing to improving the hole transport rate.
In some examples, the light absorbing layer 3 comprises a perovskite material. As an intrinsic semiconductor material, the perovskite material not only can transport electrons, but also can transport holes, and therefore, not only can serve as the light absorbing layer, but also can serve as the electron or hole transport layer in the perovskite solar battery.
Types of the perovskite material are not specifically limited, and may be selected based on actual requirements. In some examples, the perovskite material may include one or more of an inorganic halide perovskite material, an organic halide perovskite material, and an organic-inorganic hybrid halide perovskite material. The perovskite material may have a molecular formula of ABX3, where A represents an inorganic cation, an organic cation, or an organic-inorganic hybrid cation, B represents an inorganic cation, an organic cation, or an organic-inorganic hybrid cation, and X represents an inorganic anion, an organic anion, and an organic-inorganic hybrid anion.
As an example, A is selected from one or more of CH3NH3+(MA+), CH(NH2)2+)2+(FA+), Li+, Na+, K+, Rb+, and Cs+. Optionally, A is selected from one or more of CH3NH3+, CH(NH2)2+, and Cs+.
As an example, B is selected from one or more of Pb2+, Sn2+, Be2+, Mg3+, Ca2+, Sr2+, Ba2+, Zn2+, Ge2+, Fe2+, Co2+, and Ni2+. Optionally, B is selected from one or both of Pb2+ and Sn2+.
As an example, X is selected from one or more of F−, Cl−, Br−, and I−. Optionally, X is selected from one or more of Cl−, Br−, and I−.
In some examples, the perovskite material includes, but is not limited to, one or more of CH3NH3PbI3 (MAPbI3), CH(NH2)2PbI3 (FAPbI3), CsPbI3, CsPbI2Br, and CsPbIBr2.
In some examples, thickness of the light absorbing layer 3 is from 50 nm to 2,000 nm.
In some examples, material of the first electrode 1 is not specifically limited, and may be selected based on actual requirements. For example, the material of the first electrode 1 is an organic conductive material, an inorganic conductive material, and an organic-inorganic hybrid conductive material.
In some examples, material of the second electrode 5 is not specifically limited, and may be selected based on actual requirements. For example, the material of the second electrode 5 is an organic conductive material, an inorganic conductive material, and an organic-inorganic hybrid conductive material.
In some examples, one of the first electrode 1 and the second electrode 5 is a transparent electrode. In some examples, both the first electrode 1 and the second electrode 5 are transparent electrodes. Optionally, the transparent electrode is a FTO (flourine-doped tin dioxide, SnO2:F) electrode, an ITO (indium-doped tin dioxide, SnO2:In2O3) electrode, an AZO (aluminum-doped zinc oxide) electrode, a BZO (boron-doped zinc oxide) electrode, or an IZO (indium zinc oxide) electrode. Optionally, the transparent electrode is an FTO electrode or an ITO electrode.
In some examples, one of the first electrode 1 and the second electrode 5 is a metal electrode or a conductive carbon electrode. Optionally, the metal electrode is selected from one or more of a gold electrode, a silver electrode, an aluminum electrode, and a copper electrode.
In some examples, thickness of the first electrode 1 is not specifically limited, and may be selected based on actual requirements, for example, is from 50 nm to 1,000 nm.
In some examples, thickness of the second electrode 5 is not specifically limited, and may be selected based on actual requirements, for example, is from 10 nm to 500 nm.
As shown in
In some examples, thickness of the electron transport layer 4 is not specifically limited, and may be selected based on actual requirements, for example, is from 20 nm to 300 nm.
In some examples, an electron transport material of the electron transport layer 4 is not specifically limited, and may be selected based on actual requirements. For example, the electron transport material is selected from an organic electron transport material, an inorganic electron transport material, or an organic-inorganic hybrid electron transport material.
As an example, the electron transport material is selected from at least one of the following materials: an imide compound, a quinone compound, fullerene and derivatives thereof, 2,2′,7,7′-tetrakis(N,N-p-dimethoxyphenylamino)-9,9′-spirobifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), poly(3-hexylthiophene) (P3HT), triptycene-cored triphenlamine (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-aniline)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxide (metal element selected from Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr), silicon oxide (SiO2), strontium titanate (SrTiO3), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), or cuprous thiocyanate (CuSCN).
Optionally, the electron transport material is selected from one or more of fullerenes and derivatives thereof. For example, the electron transport material is selected from one or more of PC60BM and PC70BM. A bottom energy level of a conduction band of fullerenes and derivatives thereof can better match a bottom energy level of the conduction band of the light absorbing layer, thereby promoting electron extraction and transport.
In some examples, the perovskite solar battery includes a first electrode 1, a second hole transport layer 22, a first hole transport layer 21, a light absorbing layer 3, an electron transport layer 4, and a second electrode 5 that are arranged successively. The difference value ΔVBM1 between the top energy level of the valence band of the second hole transport layer 22 and the top energy level of the valence band of the first hole transport layer 21 is from −1.0 eV to 1.0 eV, the first hole transport material of the first hole transport layer 21 is one selected from PTAA, and nickel oxide that is doped with a first doping element or is undoped, and the second hole transport material of the second hole transport layer 22 includes at least one of: MoO3, CuI, or NiMgLiO that is doped with the second doping element or is undoped.
In some examples, the perovskite solar battery includes a first electrode 1, an electron transport layer 4, a light absorbing layer 3, a first hole transport layer 21, a second hole transport layer 22, and a second electrode 5 that are arranged successively. The difference value ΔVBM1 between the top energy level of the valence band of the second hole transport layer 22 and the top energy level of the valence band of the first hole transport layer 21 is from −1.0 eV to 1.0 eV, the first hole transport material of the first hole transport layer 21 is one selected from PTAA, and nickel oxide that is doped with a first doping element or is undoped, and the second hole transport material of the second hole transport layer 22 includes at least one of: MoO3, CuI, or NiMgLiO that is doped with the second doping element or is undoped.
The perovskite solar battery in the first aspect of embodiments of the present application is not limited to the above structure, and may further include other functional layers. For example, in some examples, the perovskite solar battery further includes a hole blocking layer between the light absorbing layer and the electron transport layer. In some examples, the perovskite solar battery further includes an electrode modifying layer for modifying the first electrode or the second electrode, where the electrode modifying layer can reduce an energy level barrier between the light absorbing layer and the first electrode or the second electrode, to function for transporting holes to block electrons or transporting electrons to block holes.
The perovskite solar battery may be prepared in accordance with a method known in the art. An example preparation method includes the steps of: preparing a first electrode, forming a second hole transport layer on the first electrode, forming a first hole transport layer on the second hole transport layer, forming a light absorbing layer on the first hole transport layer, forming an electron transport layer on the light absorbing layer, and forming a second electrode on the electron transport layer. Another example preparation method includes: preparing a first electrode, forming an electron transport layer on the first electrode, forming a light absorbing layer on the electron transport layer, forming a first hole transport layer on the light absorbing layer, forming a second hole transport layer on the first hole transport layer, and forming a second electrode on the second hole transport layer.
The film-forming method of each of the above film layers is not specifically limited, and a film-forming method known in the art may be used, for example, chemical bath deposition, chemical vapor deposition, electrochemical deposition, physical epitaxis, thermal evaporation, atomic layer deposition, precursor solution slit coating, precursor solution blade coating, sol-gel, magnetron sputtering, and pulsed laser deposition.
An energy band distribution of each film layer may be measured by an X-ray photoelectron spectrometer (XPS) and an ultraviolet photoelectron spectrometer (UPS).
The perovskite solar battery in the first aspect of embodiments of the present application may be used alone as a unijunction perovskite solar battery, or may be combined with a perovskite type or other types of solar batteries to form a stacked solar battery, such as a perovskite-perovskite stacked solar battery or a perovskite-crystalline silicon stacked solar battery.
The second aspect of embodiments of the present application further provides a photovoltaic assembly, the photovoltaic assembly includes the perovskite solar battery in the first aspect of the embodiments of the present application, and the perovskite solar battery may be used as a power source for the photovoltaic assembly after the processes, such as series connection, parallel connection, and encapsulation.
In some examples, the photovoltaic assembly includes a unijunction perovskite solar battery, a perovskite-perovskite stacked solar battery, or a perovskite-crystalline silicon stacked solar battery in the first aspect of the embodiments of the present application.
The following examples describe the disclosure of the present application in more detail and are provided for illustrative purposes only, as various modifications and changes within the scope of the disclosure of the present application will be apparent to those skilled in the art. Unless otherwise stated, all parts, percentages, and ratios reported in the following examples are on a weight basis, and all reagents used in the examples are commercially available or can be obtained by synthesis according to conventional methods, and can be directly used without further treatment, and the instruments used in the examples are commercially available.
A group of glass substrates sized 2.0 cm×2.0 cm and covered with ITO were taken, and their surface was successively washed twice with acetone and isopropanol, respectively. Then, they were immersed in deionized water for ultrasonic treatment for 10 min, then dried in an air dry oven, and kept in a glove box (N2 atmosphere).
A precursor solution was prepared by adding KCl into a chlorobenzene solution of CuI at a concentration of 0.08 mol/L, where the KCl concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
A solution of 1.5 mol/L MAPbI3 in dimethylformamide was spin-coated on the obtained first hole transport layer at a speed of 3,000 rpm-4,500 rpm, which was then heated on a thermostatic heating stage at 100° C. for 30 min, and cooled to room temperature to obtain the light absorbing layer with a thickness of 800 nm.
A solution of PC60BM in chlorobenzene at a concentration of 20 mg/mL was spin-coated on the obtained light absorbing layer at a speed of 800 rpm-1,500 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the electron transport layer with a thickness of 60 nm.
The above samples were put into a vacuum coating machine, and an Ag electrode with a thickness of 100 nm was evaporated on the surface of the obtained electron transport layer under the vacuum condition of 5×10−4 Pa.
The perovskite solar battery finally prepared in Example 1 has a structure of ITO/doped CuI/NiOx/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding KI into an aqueous solution of CuI at a concentration of 0.08 mol/L, where the KI concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
A solution of PTAA in toluene at a concentration of 2 mg/mL was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 2 has a structure of ITO/doped CuI/PTAA/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding KCl into a solution of MoO3 in chlorobenzene at a concentration of 0.08 mol/L, where the KCl concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 3 has a structure of ITO/doped MoO3/NiOx/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding KCl into an aqueous solution of MoO3 colloid at a concentration of 0.08 mol/L, where the KCl concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
A solution of PTAA in toluene at a concentration of 2 mg/mL was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 4 has a structure of ITO/doped MoO3/PTAA/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding KCl into a solution of NiMgLiO in chlorobenzene at a concentration of 0.08 mol/L, where the KCl concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 5 has a structure of ITO/doped NiMgLiO/NiOx/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding KCl into an aqueous solution of NiMgLiO colloid at a concentration of 0.08 mol/L, where the KCl concentration was 3 g/L, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
A solution of PTAA in toluene at a concentration of 2 mg/mL was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 6 has a structure of ITO/doped NiMgLiO/PTAA/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding lithium carbonate into an aqueous solution of MoO3 colloid at a concentration of 0.08 mol/L, where the lithium carbonate concentration was 10%, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
A solution of PTAA in toluene at a concentration of 2 mg/mL was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 7 has a structure of ITO/doped MoO3/PTAA/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding lithium carbonate into an aqueous solution of MoO3 colloid at a concentration of 0.08 mol/L, where the lithium carbonate concentration was 6%, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 8 has a structure of ITO/doped MoO3/NiOx/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding CoCl2 into an aqueous solution of Cu2O colloid at a concentration of 0.08 mol/L, where the CoCl2 concentration was 10%, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
A solution of PTAA in toluene at a concentration of 2 mg/mL was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 100° C. for 10 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 9 has a structure of ITO/doped Cu2O/PTAA/MAPbI3/PC60BM/Ag.
A precursor solution was prepared by adding CoCl2 into an aqueous solution of Cu2O colloid at a concentration of 0.08 mol/L, where the CoCl2 concentration was 20%, and the precursor solution was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 300° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Example 10 has a structure of ITO/doped Cu2O/NiOx/MAPbI3/PC60BM/Ag.
A hybrid solution of NiOx-CuI in chlorobenzene at a concentration of 6 wt % was spin-coated on the obtained ITO glass substrate at a speed of 4,000 rpm-6,000 rpm, where a mass ratio of nickel oxide to CuI was 1:1, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the hole transport layer with a thickness of 25 nm.
The perovskite solar battery finally prepared in Comparative Example 1 has a structure of ITO/NiOx+CuI/MAPbI3/PC60BM/Ag.
A hybrid solution of PTAA-CuI in chlorobenzene at a concentration of 2 mg/mL was spin-coated on the obtained ITO glass substrate at a speed of 4,000 rpm-6,000 rpm, where a mass ratio of PTAA to CuI was 1:1, which was then heated on a thermostatic heating stage at 100° C. for 15 min to obtain the hole transport layer with a thickness of 25 nm.
The perovskite solar battery finally prepared in Comparative Example 2 has a structure of ITO/PTAA+CuI/MAPbI3/PC60BM/Ag.
A solution of tri(isopropoxy)vanadium oxide in isopropanol was spin-coated on the obtained ITO glass substrate at a speed of 5,000 rpm-6,500 rpm, which was then heated on a thermostatic heating stage at 120° C. for 15 min to obtain the second hole transport layer with a thickness of 10 nm.
An aqueous solution of NiOx nanocolloid at a concentration of 3 wt % was spin-coated on the obtained second hole transport layer at a speed of 4,000 rpm-6,000 rpm, which was then heated on a thermostatic heating stage at 300° C. for 60 min to obtain the first hole transport layer with a thickness of 15 nm.
The perovskite solar battery finally prepared in Comparative Example 3 has a structure of ITO/V2O5/NiOx/MAPbI3/PC60BM/Ag.
Energy band distributions of the obtained hole transport layer and light absorbing layer were measured using an X-ray photoelectron spectrometer (XPS) model Escalab 250Xi (from Thermo Scientific) at room temperature under normal pressure. The results are shown in Table 1.
Table 2 shows the test results of open-circuit voltages Voc, short-circuit current density Jsc, fill factors, and power conversion efficiency of the perovskite solar batteries prepared in Examples 1-10 and Comparative Examples 1-3 under standard simulated sunlight illumination (AM1.5G).
As can be seen from the test results in Table 2, the perovskite solar batteries prepared in Examples 1-10 have higher open-circuit voltages Voc, short-circuit current density Jsc, filling factors, and power conversion efficiency than the perovskite solar batteries prepared in Comparative Example 1 and Comparative Example 2.
As can be further seen from the test results in Table 2, in reference document 3, V2O5 is used as the second hole transport material, but the resulting perovskite solar battery has poorer performance than the perovskite solar batteries prepared in Examples 1-10. The possible reason is that V2O5 is slightly soluble in water at room temperature and has certain hygroscopicity; in addition, V2O5 is a strong oxidant, and is very easily consumed by a reductant in the environment when it is not encapsulated, thus forming a powder or mesoporous state, additionally introducing water and oxygen in the environment into the perovskite solar battery, and failing to favorably isolating water and oxygen. In addition, the lattice matching between V2O5 and nickel oxide is not ideal, and the first hole transport layer is poorly protected and passivated. Therefore, there is high interface impedance and defect density between the first hole transport layer and the second hole transport layer, thereby affecting the hole extraction and transport.
While the above description merely provides specific embodiments of the present application, the scope of protection of the present application is not limited to the specific embodiments. Any person skilled in the art may easily conceive of various equivalent modifications or replacements without departing from the technical scope disclosed in the present application. All these modifications or replacements should be encompassed within the scope of protection of the present application. Therefore, the scope of the present application shall be determined with reference to the scope of the claims.
This application is a continuation of International Application No. PCT/CN2021/135304, filed Dec. 3, 2021, the entire content of which is incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/CN2021/135304 | Dec 2021 | US |
| Child | 18315483 | US |
