This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2006-290196, filed on Oct. 25, 2006, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a perpendicular magnetic recording medium used for a hard disc drive, a method of fabricating the same, and a magnetic recording system.
2. Description of the Related Art
In recent years, magnetic recording media such as the hard disk are frequently used as recording media for personal computers, game machines and so on. Furthermore the demand for higher recording densities of the magnetic recording media is increasing and use of new technologies in perpendicular magnetic recording media is needed.
As in the case of the longitudinal recording, in the development of perpendicular magnetic recording media, it is important to reduce noise and improve writability at high densities. Moreover at high recording densities, a good over writability (repeated writing) is also necessary. Writability is an index of accuracy in rewriting the data. The noise from the soft under layer in the recording media has been one of the major sources of noise in perpendicular recording. Techniques for reducing noise from the soft under layer are disclosed in patent document 1 (Japanese Patent Application Laid-Open No. 2004-79043) and patent document 2 (Japanese Patent Application Laid-Open No. 2004-272957). In these techniques, a non-magnetic metal layer, such as Ruthenium, is sandwiched as a soft under layer between two ferromagnetic layers and the two ferromagnetic layers, whose magnetization lie in the plane of the film, are magnetized in opposite directions. Such a structure of a soft under layer is also called APS-SUL (anti-parallel structure in a soft under layer). The APS-SUL structure can eliminate the noise from soft under layer completely and can increase recording densities.
On a soft under layer, a separation layer made of a material such as Ta, an intermediate layer made of a material such as Ru, and a recording layer are formed. In order to improve the anisotropy of the magnetic layer and reduce noise, it is necessary to increase the thickness of the intermediate layer such as Ru. However, the intermediate layer having a large thickness reduces writability. Since noise can be reduced by using APS-SUL, the thickness of the intermediate layer can be reduced as compared with related art techniques, but still it is not possible to achieve both noise reduction and higher writability. For example, even in a perpendicular magnetic recording medium having a high recording density of 250 Gbit/inch2 with APS-SUL, an intermediate layer has to be 20 nm or larger in thickness, so that it is difficult to obtain sufficient writability when high anisotropy magnetic recording layers are introduced.
An object of the present invention is to provide a perpendicular magnetic recording medium which can achieve both noise reduction and higher writability, a method of fabricating the same, and a magnetic recording system.
After thorough study to solve the problem, the present inventor has arrived at the following modes.
A perpendicular magnetic recording medium according to the present invention includes a soft under layer, an intermediate layer formed on the soft under layer, and a recording layer formed on the intermediate layer. The soft under layer includes a first ferromagnetic layer with an amorphous structure, a second ferromagnetic layer with an amorphous structure formed above the first ferromagnetic layer, and a third ferromagnetic layer with a polycrystalline structure formed between the second ferromagnetic layer and the intermediate layer. The first ferromagnetic layer and a structure of the second and third ferromagnetic layers are magnetized in anti-parallel directions.
A magnetic recording system according to the present invention includes the above-described perpendicular magnetic recording medium. The magnetic recording system further includes a magnetic head recording and reproducing information on the perpendicular magnetic recording medium.
In a method of fabricating a perpendicular magnetic recording medium according to the present invention, a soft under layer is formed and then an intermediate layer is formed on the soft under layer. Next, a recording layer is formed on the intermediate layer. When the soft under layer is formed, a first ferromagnetic layer with an amorphous structure is formed and then a second ferromagnetic layer with an amorphous structure is formed above the first ferromagnetic layer. After that, a third ferromagnetic layer with a polycrystalline structure is formed on the second ferromagnetic layer. The first ferromagnetic layer and the structure of the second and third ferromagnetic layers are magnetized in anti-parallel directions.
An exemplary embodiment of the present invention will now be specifically described with reference to the accompanying drawings.
In the present embodiment, as shown in
As the substrate 1, for example, a plastic substrate, a crystallized glass substrate, a tempered glass substrate, a Si substrate, an aluminum alloy substrate or the like is used.
As the amorphous ferromagnetic layers 2 and 4, amorphous ferromagnetic layers containing Fe, Co and/or Ni are formed. Further, the amorphous ferromagnetic layers 2 and 4 may contain Cr, B, Cu, Ti, V, Nb, Zr, Pt, Pd and/or Ta. These elements make it possible to stabilize the amorphous states of the amorphous ferromagnetic layers 2 and 4, and improve magnetization as compared with the case where the amorphous ferromagnetic layers 2 and 4 contain only Fe, Co and/or Ni. Moreover, Al, Si, Hf and/or C may be contained. Particularly when considering the concentration of recording magnetic fields, it is preferable that the amorphous ferromagnetic layers 2 and 4 are made of soft magnetic materials having a saturation flux density Bs of 1.0 T or higher. Further, when considering writability at a high transfer rate, it is preferable that the high frequency magnetic permeability of the amorphous ferromagnetic layers 2 and 4 is high. To be specific, for example, a FeCoB layer, a FeSi layer, a FeAlSi layer, a FeTaC layer, a CoZrNb layer, a CoCrNb layer, a NiFeNb layer, and so on are available. The amorphous ferromagnetic layers 2 and 4 can be formed by, for example, a plating method, a sputtering method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 2 Pa. The amorphous ferromagnetic layers 2 and 4 are, for example, 5 nm to 25 nm in thickness.
As the spacer layer 3, for example, a non-magnetic metal layer containing Ru, Cu, Cr and/or the like is formed. Further, the spacer layer 3 may contain a rareearth metals such as Rh and/or Re. The spacer layer 3 can be formed by, for example, a plating method, a sputtering method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 2 Pa.
As the polycrystalline ferromagnetic layer 5, for example, a crystallized ferromagnetic layer containing Fe, Co and/or Ni is formed. The polycrystalline ferromagnetic layer 5 may contain Cr B and/or the like. Further, the ferromagnetic layer has, for example, a texture structure and can be formed by, for example, a plating method, a sputtering method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 2 Pa. Further, it is preferable that the polycrystalline ferromagnetic layer 5 is, for example, 1 nm to 20 nm in thickness. It is more preferable that the polycrystalline ferromagnetic layer 5 is 1 nm to 5 nm in thickness. When the polycrystalline ferromagnetic layer 5 is less than 1 nm in thickness, it is difficult to obtain an effect such as an improvement in crystalline orientation (described later). On the other hand, when the thickness of the polycrystalline ferromagnetic layer 5 is too large, writability may deteriorate. Polycrystalline ferromagnetic layer preferably have an fcc crystallographic structure, though it could have other structures such as bcc of hcp.
In the present embodiment, the spacer layer 3 has a thickness (for example, 0.3 nm to 3 nm) of which magnetic coupling is formed in anti-parallel directions between a lower layer made up of the amorphous ferromagnetic layer 2 and an upper layer made up of the amorphous ferromagnetic layer 4 and the polycrystalline ferromagnetic layer 5. In other words, the lower layer and the upper layer are magnetized in opposite directions and anti-ferromagnetic coupling occurs between the lower layer and the upper layer. Moreover, the relationship of “Ms2×t2=Ms4×t4+Ms5×t5” is established where Ms2 represents the saturation magnetization of the amorphous ferromagnetic layer 2, t2 represents the thickness of the amorphous ferromagnetic layer 2, Ms4 represents the saturation magnetization of the amorphous ferromagnetic layer 4, t4 represents the thickness of the amorphous ferromagnetic layer 4, Ms5 represents the saturation magnetization of the polycrystalline ferromagnetic layer 5, and t5 represents the thickness of the polycrystalline ferromagnetic layer 5. Therefore, the residual magnetization of the soft under layer 11 is zero.
Further, in the present embodiment, an intermediate layer 6 is formed directly on the soft under layer 11. The intermediate layer 6 is, for example, about 10 nm to 20 nm in thickness. Further, as the intermediate layer 6, a Ru layer whose crystal structure is a hexagonal closest packed structure (hcp) is formed, for example. The intermediate layer 6 may be a Ru—X alloy layer (X═Co, Cr, Fe, Ni and/or Mn) mainly composed of Ru with a hcp crystal structure. The intermediate layer 6 can be formed by, for example, a sputtering method, a plating method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 8 Pa. Further, it is preferable that the intermediate layer 6 is, for example, 5 nm to 25 nm in thickness. When the thickness of the intermediate layer 6 is less than 5 nm, noise may be insufficiently reduced. On the other hand, when the thickness of the intermediate layer 6 exceeds 25 nm, writability may deteriorate.
On the intermediate layer 6, a recording layer 7 is formed. As the recording layer 7, for example, a ferromagnetic layer mainly composed of Co and Pt is formed. Further, the recording layer 7 may contain Cr, B, SiO2, TiO2, CrO2, CrO, Cu, Ti, Nb and/or the like. To be specific, a CoCrPt layer is used in which SiO2 particles are dispersed on the grain boundary. The recording layer 7 may include a plurality of layers. The recording layer 7 can be formed by, for example, a plating method, a sputtering method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC/RF sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 6 Pa. In this case, gas containing 2% to 5% oxygen is used. Further, it is preferable that the recording layer 7 is, for example, 8 nm to 20 nm in thickness.
On the recording layer 7, a protective layer 8 is formed. As the protective layer 8, for example, an amorphous carbon layer, a carbon hydride layer, a carbon nitride layer, an aluminum oxide layer or the like is formed. The protective layer 8 can be formed by, for example, a plating method, a sputtering method, an evaporation method, a CVD (chemical vapor deposition) method, and so on. When using a DC sputtering method, the inside of a chamber is kept in, for example, an Ar atmosphere of 0.5 Pa to 2 Pa. The protective layer 8 is, for example, 1 nm to 5 nm in thickness.
In the perpendicular magnetic recording medium configured thus, data is written (recorded) and read (reproduced) by using a magnetic head shown in
In the present embodiment, as described above, the upper layer includes not only the amorphous ferromagnetic layer 4 but also the polycrystalline ferromagnetic layer 5. The polycrystalline ferromagnetic layer 5 with the intermediate layer 6 makes it possible to align the orientation of crystals making up the recording layer 7. Therefore, in the present embodiment, the intermediate layer 6 has a small thickness of 5 nm to 25 nm but the orientation of crystals making up the recording layer 7 is preferable. Since the intermediate layer 6 has a small thickness, excellent writability can be obtained. Further, the small thickness of the intermediate layer 6 also makes it possible to reduce the size of crystal grains making up the recording layer 7.
On the other hand, as described above, the soft under layer 11 has an APS-SUL structure in the present embodiment. Therefore, even when the intermediate layer 6 has a small thickness, noise has little influence.
As described above, according to the present embodiment, excellent writability can be obtained by forming the polycrystalline ferromagnetic layer 5 and noise can be reduced by using APS-SUL. In other words, according to the present embodiment, it is possible to achieve both higher writability and noise reduction.
Instead of the disk-like substrate 1, a tape-like film may be used as a base. In this case, as the material of the base, polyester (PE), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI) having high thermal resistance can be listed.
The following will describe the contents and results of experiments having been actually conducted by the present inventor.
(First Experiment)
In the first experiment, four kinds of samples were prepared. In all of these samples, on a glass substrate, a FeCoB layer having a thickness of 25 nm and magnetization of 1.7 T was formed as the amorphous ferromagnetic layer 2, a Ru layer having a thickness of 0.4 nm was formed as the spacer layer 3, a FeCoB layer was formed as the amorphous ferromagnetic layer 4, and a NiFe layer was formed as the polycrystalline ferromagnetic layer 5. Moreover, a C layer having a thickness of 5 nm was formed on the polycrystalline ferromagnetic layer 5. As shown in Table 1, the amorphous ferromagnetic layer 4 and the polycrystalline ferromagnetic layer 5 had different thicknesses in each sample. At this point, residual magnetization on the soft under layer 11 was substantially zero in all of these samples.
Next, an OSA (Optical Scan Analyzer) pattern was observed and magnetic anisotropy on the soft under layer 11 was examined for each sample.
In these samples, as shown in
(Second Experiment)
In the second experiment, the relationship between the thicknesses of the polycrystalline ferromagnetic layer 5 and the intermediate layer 6 and a coercive force was examined. The results are shown in
As shown in
(Third Experiment)
In the third experiment, the relationship between the thicknesses of the polycrystalline ferromagnetic layer 5 and the intermediate layer 6 and the magnitude of noise was examined. The results are shown in
As shown in
(Fourth Experiment)
In the fourth experiment, the relationship between the thicknesses of the polycrystalline ferromagnetic layer 5 and the intermediate layer 6 and writability was examined. The results are shown in
As shown in
(Fifth Experiment)
In the fifth experiment, a Ru layer whose surface was a (0002) plane was formed as the intermediate layer 6 and the value of Δθ50 was obtained based on the X-ray diffraction. When a Cu target is used, the (0002) plane of Ru has a peak (2θ) at 42.25° and the value of Δθ50 is a half-width at 42.25°. The results of the X-ray diffraction are shown in
As a result of this experiment, when the intermediate layer 6 was 32 nm in thickness, Δθ50 was 3.67°. When the intermediate layer 6 was 16 nm in thickness, Δθ50 was 4.19°. When the intermediate layer 6 was 13 nm in thickness, Δθ50 was 4.05°. This means that even when the thickness of the intermediate layer 6 was reduced to about 13 nm to 16 nm, excellent crystallinity was obtained by the action of the polycrystalline ferromagnetic layer 5.
The following will describe a hard disk drive which is an example of a magnetic recording system including the perpendicular magnetic recording medium of the foregoing embodiment.
A housing 101 of a hard disk drive 100 stores a magnetic disk 103 mounted on a rotating shaft 102 and rotated about the rotating shaft 102, a slider 104 having a magnetic head recording and reproducing information on the magnetic disk 103, a suspension 108 holding the slider 104, a carriage arm 106 having the suspension 108 fixed thereon and moving with respect to an arm shaft 105 along a surface of the magnetic disk 103, and an arm actuator 107 driving the carriage arm 106. As the magnetic disk 103, the perpendicular magnetic recording medium according to the foregoing embodiment is used.
According to the present invention, the third ferromagnetic layer with a polycrystalline structure is interposed between the second ferromagnetic layer with an amorphous structure and the intermediate layer. It is thus possible to reduce noise without increasing the thickness of the intermediate layer. As a result, it is possible to achieve both noise reduction and higher writability.
Number | Date | Country | Kind |
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2006-290196 | Oct 2006 | JP | national |