1. Field of the Invention
This invention relates generally to perpendicular magnetic recording media, and more particularly to a disk with laminated perpendicular magnetic recording layers.
2. Description of the Related Art
Perpendicular magnetic recording, wherein the recorded bits are stored in a perpendicular or out-of-plane orientation in the recording layer, is a promising path toward ultra-high recording densities in magnetic recording hard disk drives. A common type of perpendicular magnetic recording system is one that uses a “dual-layer” medium. This type of system is shown in
One type of material for the RL is a granular ferromagnetic cobalt alloy, such as a CoPtCr alloy, with a hexagonal-close-packed (hcp) crystalline structure having the c-axis oriented substantially out-of-plane or perpendicular to the RL. The granular cobalt alloy RL should also have a well-isolated fine-grain structure to produce a high-coercivity media and to reduce intergranular exchange coupling, which is responsible for high intrinsic media noise. Enhancement of grain segregation in the cobalt alloy RL can be achieved by the addition of oxides, including oxides of Si, Ta, Ti, Nb and B. These oxides tend to precipitate to the grain boundaries, and together with the elements of the cobalt alloy form nonmagnetic intergranular material.
The SUL serves as a flux return path for the field from the write pole to the return pole of the recording head. In
Magnetic recording media that have RLs formed of granular ferromagnetic cobalt alloys, such as the cobalt alloys used for perpendicular recording, exhibit increasing intrinsic media noise with increasing linear recording density. Media noise arises from irregularities in the recorded magnetic transitions and results in random shifts of the readback signal peaks. High media noise leads to high bit error rates. Thus to obtain higher areal densities in magnetic recording disk drives, it is necessary to decrease the intrinsic media noise, i.e., increase the signal-to-noise ratio (SNR), of the recording media. The media SNR is to first order proportional to 201 og (N1/2), where N is the number of magnetic grains per unit area in the media. Accordingly, increases in SNR can be accomplished by increasing N.
Improved media SNR can be achieved with “laminated” media. In laminated media, the single magnetic layer is replaced with a laminate of two or more separate magnetic layers that are spaced apart and magnetically decoupled by nonmagnetic spacer layers. This discovery was made for horizontal or longitudinal magnetic recording media by S. E. Lambert, et al., “Reduction of Media Noise in Thin Film Metal Media by Lamination”, IEEE Transactions on Magnetics, Vol. 26, No. 5, September 1990, pp. 2706-2709, and patented in U.S. Pat. No. 5,051,288. A laminated media structure with two perpendicular RLs separated by a nonmagnetic spacer layer (SL) is shown schematically in
The need for higher write fields is not limited to laminated media. Higher write fields are required for perpendicular media with single-layer RLs than for comparable horizontal media with single-layer RLs. This can be appreciated by reference to
What is needed is a perpendicular magnetic recording medium that has high recording density and high SNR and yet is easy to write.
The invention is a laminated perpendicular magnetic recording medium having two recording layers (RL1 and RL2) that are separated and magnetically decoupled by a nonmagnetic spacer layer (SL). The SL has a thickness and composition to assure there is no antiferromagnetic or ferromagnetic coupling between RL1 and RL2. Thus in the presence of the write field, RL1 and RL2 respond independently and become oriented with the direction of the write field. Each RL is an “exchange-spring” type magnetic recording layer formed of two ferromagnetic layers (MAG1 and MAG2) that have substantially perpendicular magnetic anisotropy and are ferromagnetically exchange-coupled by a nonmagnetic or weakly ferromagnetic coupling layer (CL). In each RL, the magnetic layer closer to the write head, i.e., MAG2, may have a lower anisotropy field than MAG1. MAG1 and MAG2 in each RL may also have substantially similar anisotropy fields because each RL takes advantage of the depth-dependent write field, i.e., in general a write head produces a larger magnetic field and larger field gradient near the surface of the RL, while the field strength decreases further inside the RL. The medium takes advantage of lamination to attain higher SNR (and lower BER) yet has improved writability as a result of each RL being an exchange-spring type RL.
For a fuller understanding of the nature and advantages of the present invention, reference should be made to the following detailed description taken together with the accompanying figures.
Perpendicular magnetic recording layers, such as hcp granular ferromagnetic cobalt alloys, exhibit perpendicular uniaxial magnetic anisotropy. Uniaxial magnetic anisotropy of a ferromagnetic layer with an anisotropy constant K means essentially that all of the magnetic moments tend to align along the same axis, referred to as the easy axis, which is the lowest energy state. The anisotropy field Hk of a ferromagnetic layer with uniaxial magnetic anisotropy K is the magnetic field that would need to be applied along the easy axis to switch the magnetization direction.
The invention is a perpendicular magnetic recording medium that takes advantage of lamination to attain higher SNR (and lower BER) yet requires lower write current than would typically be required to reverse the magnetization in the laminated media. The structure of a perpendicular magnetic recording medium according to the invention is shown in sectional view in
MAG1 and MAG2 may have substantially similar anisotropy fields Hk, or the magnetic layer closer to the write head, i.e., MAG2, may have a lower Hk than MAG1. If MAG1 and MAG2 have substantially similar anisotropy fields Hk, then the Hk for MAG2 should be at least 70% and preferably at least 90% of the Hk for MAG1. This can be achieved by forming MAG1 and MAG2 of substantially the same materials and composition, which simplifies the fabrication process. MAG1 and MAG2 may have substantially similar anisotropy fields because each RL structure takes advantage of the depth-dependent write field H, i.e., in general a write head produces a larger magnetic field and larger field gradient near the surface of the RL, while the field strength decreases further inside the RL. The high field and field gradient near the top of the RL, where MAG2 is located, enables MAG2 to be formed of a high-Hk material. As the magnetization of MAG2 is reversed by the write field it assists in the magnetization reversal of the lower magnetic layer MAG1. In this non-coherent reversal of the magnetizations of MAG1 and MAG2, MAG2 changes its magnetization orientation in response to a write field and in turn amplifies the “torque,” or reverse field, exerted on MAG1, causing MAG1 to change its magnetization direction in response to a weaker write field than would otherwise be required in the absence of MAG2. Because of its function in this manner, the upper magnetic layer in each RL (MAG2) is sometimes referred to as an “exchange-spring” layer. Although the write field acting on MAG1 can be significantly less than the write field acting on MAG2, MAG1 can have substantially the same Hk because of the torque created by the magnetization reversal of MAG2. MAG1 and MAG2 can thus have substantially the same material composition and thus substantially similar anisotropy fields Hk.
As shown in the exploded portion of
The CL should mediate a coupling field HJ sufficient to provide a considerable reduction on the switching field Hs, but small enough to not couple the MAG1 and MAG2 layers rigidly together. Micromagnetic simulations for the RL with “weakly” coupled MAG1 and MAG2, i.e., a coupling field HJ of approximately 0.25Hk, showed non-coherent magnetization reversal and thereby a reduction in the required HS. The simulated RL also showed a low dependence of HS on field angle, i.e., the angle between the write field and the orientation of the MAG1 and MAG2 grains. This is important because it is not possible to manufacture a RL in which the grain orientations in MAG1 and MAG2 are a constant value at all locations in the RL, so the grains will exhibit a grain orientation distribution that contributes to the switching field distribution. The reduced angular dependence of Hs results in a reduced switching field distribution. Because it is known that a large switching field distribution is a significant contributor to media jitter, which is a source of intrinsic media noise, the RL structure will improve media SNR. Thus, in addition to the improved media SNR as a result of lamination of RL1 and RL2, each RL structure will also contribute to improved SNR.
A representative disk structure for the invention shown in
The adhesion layer or OL for the growth of the SUL may be an AlTi alloy or a similar material with a thickness of about 2-5 nm. The SUL may be formed of magnetically permeable materials such as alloys of CoNiFe, FeCoB, CoCuFe, NiFe, FeAlSi, FeTaN, FeN, FeTaC, CoTaZr, CoFeB, and CoZrNb. The SUL may also be a laminated or multilayered SUL formed of multiple soft magnetic films separated by nonmagnetic films, such as electrically conductive films of Al or CoCr. The SUL may also be a laminated or multilayered SUL formed of multiple soft magnetic films separated by interlayer films that mediate an antiferromagnetic coupling, such as Ru, Ir, or Cr or alloys thereof.
The EBL is located on top of the SUL. It acts to break the magnetic exchange coupling between the magnetically permeable films of the SUL and the RL and also serves to facilitate epitaxial growth of the RL. The EBL may not be necessary, but if used it can be a nonmagnetic titanium (Ti) layer; a non-electrically-conducting material such as Si, Ge and SiGe alloys; a metal such as Cr, Ru, W, Zr, Nb, Mo, V and Al; a metal alloy such as amorphous CrTi and NiP; an amorphous carbon such as CNx, CHx and C; or oxides, nitrides or carbides of an element selected from the group consisting of Si, Al, Zr, Ti, and B. If an EBL is used, a seed layer may be used on top of the SUL before deposition of the EBL. For example, if Ru is used as the EBL, a 2-4 nm thick NiFe seed layer may be deposited on top of the SUL, followed by a 5-20 nm thick Ru EBL.
MAG1 and MAG2 in RL1 and RL2 may be formed of any of the known amorphous or crystalline materials and structures that exhibit perpendicular magnetic anisotropy. Thus, MAG1 and MAG2 may each be a layer of granular polycrystalline cobalt alloy, such as a CoPt or CoPtCr alloy, with or without an oxide, such as oxides of Si, Ta, Ti, Nb and B. For example, MAG1 and MAG2 may be formed of Co57Pt18Cr17(SiO2)8, with MAG1 having a thickness of 13 nm and MAG2 having a thickness of 3 nm. MAG1 and MAG2 may have substantially the same anisotropy field Hk, which can be achieved by forming them of substantially the same materials and composition, which simplifies the fabrication process. In the preferred embodiment the lower layer (MAG1) is thicker than the upper layer (MAG2). MAG1 and MAG2 may also have substantially different anisotropy fields, with upper layer MAG2, the exchange-spring layer, preferably having the lower anisotropy field to assure it has its magnetization reversed first to assist in reversing the magnetization of the lower MAG1 layer.
Because each CL is below its corresponding MAG2, it should be able to sustain the growth of MAG2, while mediating a weak ferromagnetic coupling between the MAG2 and MAG1. Hexagonal-close-packed (hcp) materials for instance, which can mediate a weak ferromagnetic coupling and provide a good template for the growth of MAG2, are good candidates. Because the CL must enable an appropriate coupling strength, it should be either nonmagnetic or weakly ferromagnetic. Thus the CL may be formed of RuCo and RuCoCr alloys with low Co content (<about 40 atomic percent), or CoCr and CoCrB alloys with high Cr and/or B content (Cr+B>about 30 atomic percent). Si-oxide or other oxides like oxides of Ta, Ti, Nb and B may be added to these alloys in an amount up to about 15 atomic percent.
Depending on the choice of material for CL, and more particularly on the concentration of cobalt (Co) in the CL, the CL may have a thickness of less than 2.0 nm, and more preferably between about 0.2 nm and 1.0 nm, although in certain embodiments, the thickness of the CL may exceed 1.0 nm. Because Co is highly magnetic, a higher concentration of Co in the CL may be offset by thickening the CL to achieve an optimal inter-layer exchange coupling between MAG1 and MAG2. The inter-layer exchange coupling between MAG1 and MAG2 may be optimized, in part, by adjusting the materials and thickness of the CL. The CL should provide a coupling strength sufficient to have a considerable effect on the switching field (and the switching field distribution), but small enough to not couple the MAG1 and MAG2 layers rigidly together. For example, if MAG1 and MAG2 are each formed of Co57Pt18Cr17(SiO2)8, with MAG1 having a thickness of 13 nm and MAG2 having a thickness of 3 nm, then the CL may be Ru50Co30Cr20, which contains enough Co to mediate sufficient ferromagnetic exchange coupling in a 0.4 to 0.7 nm CL thickness range.
While the structure and function of each exchange-spring type RL is substantially as described above, RL1 and RL2 do not need to be identical. For example, it may be desirable to have RL1, the lower RL, have MAG1 and MAG2 with lower Hk values than MAG1 and MAG2 in RL2, the upper RL, because of the lower write field to which RL1 is exposed.
The lamination of RL1 and RL2 is provided by the spacer layer SL that magnetically decouples RL1 and RL2. SL is formed of a non-ferromagnetic material, such as Cr, Ru, CoRu (where Ru>40 atomic percent and has a thickness and composition adjusted such that RL1 and RL2 are not ferromagnetically exchange coupled, or the ferromagnetic exchange field is less than about 200 Oe), CoCr (where Cr>40 atomic percent and has a thickness and composition adjusted such that RL1 and RL2 are not ferromagnetically exchange coupled or the ferromagnetic exchange field is less than about 200 Oe), CoCrXO_(where X can be Si, Ta, or Nb, and the alloy has Cr>26 atomic percent to ensure it is nonmagnetic). The SL has a thickness and composition to assure there is no antiferromagnetic or ferromagnetic coupling between RL1 and RL2. For example, if MAG1 and MAG2 in each of RL1 and RL2 are formed of CoPtCr(SiO2) with Hk in the range of about 10 to 15 kOe, then the SL may be a 1 to 10 nm thick layer of Ru.
The OC formed on top of the RL may be an amorphous “diamond-like” carbon film or other known protective overcoats, such as Si-nitride.
While the invention has been shown and described with each RL having only two magnetic layers and one CL, each RL may have three or more magnetic layers, with additional CLs as required to mediate weak exchange coupling between adjacent magnetic layers.
The medium according to this invention thus provides improved SNR as a result of the lamination of RL1 with RL2, as well as improved writability as a result of each RL being an exchange-spring type RL.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention. Accordingly, the disclosed invention is to be considered merely as illustrative and limited in scope only as specified in the appended claims.
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