Perpendicular magnetic recording write head having a wrap around shield

Information

  • Patent Grant
  • 8995087
  • Patent Number
    8,995,087
  • Date Filed
    Wednesday, March 19, 2014
    10 years ago
  • Date Issued
    Tuesday, March 31, 2015
    9 years ago
Abstract
A perpendicular magnetic recording (PMR) head is disclosed. The PMR head includes a perpendicular magnetic recording pole having at least one side, a bottom and a top wider than the bottom. The PMR head also includes at least one side gap, at least one side shield, a to gap on the PMR pole and a top shield. The side gap(s) encapsulate the side(s) of the PMR pole, has at least one width and is between the PMR pole and the side shield(s). The to gap has a thickness such that the ratio of the width(s) to the thickness is greater than one. A portion of the top gap is between at least part of the top shield and the side shield(s).
Description
FIELD OF THE INVENTION

The present invention relates to magnetic recording technology, and more particularly to a method and system for providing perpendicular magnetic recording heads having wrap around shields.


BACKGROUND

Conventional perpendicular magnetic recording (PMR) heads may be unshielded or shielded. Although easier to fabricate and having higher write fields, unshielded heads have a low gradient field. Such a low gradient field results in less sharp transitions and lower signal to noise ratios, which are undesirable. Consequently, shielding is typically provided in conventional PMR heads.



FIG. 1 depicts a portion of a conventional PMR head 10, as viewed from the air-bearing surface (ABS). The conventional PMR head 10 is a shielded head. The conventional PMR head 10 is typically part of a merged head including the PMR head 10 and a read head (not shown) and typically resides on a slider (not shown). For clarity, the conventional PMR head 10 is not drawn to scale.


The conventional PMR head 10 includes a conventional first pole 12, alumina insulating layer 14, alumina underlayer 16 that may be considered part of the alumina insulating layer 14, a conventional PMR pole 18 that typically includes a seed layer (not shown), insulating layer 20, shield gap 26, and top shield 28. Note that in certain other embodiments, the top shield 28 may also act as pole during writing using the conventional PMR head 10. The conventional PMR pole 18 is surrounded by insulating layer 20. Similarly, the top shield 28 is surrounded by another insulating layer (not shown). The conventional PMR pole 18 has sidewalls 22 and 24. In conventional applications, the height of the conventional PMR pole 18 is typically less than approximately three-tenths micrometer. The conventional PMR pole 18 also has a negative angle such that the top of the conventional PMR pole 18 is wider than the bottom of the conventional PMR pole 18. Stated differently, the angle θ of the sidewalls is less than ninety degrees in the conventional PMR pole 18 of FIG. 1. A pole having this height and shape is desirable for use in PMR applications.


Because the conventional PMR head 10 utilizes a top shield 28, the gradient field is improved. In addition, the net magnetic field from the conventional PMR head 10 is at an angle to the perpendicular direction. However, performance of the conventional PMR head 10 may still suffer due to stray side fields. Such stray side fields may cause side erasure of adjacent tracks. In addition, such a wider field profile may give rise to increased magnetic track width. Consequently, the reduced track pitch required for ultrahigh density recording may not be achieved.



FIG. 2 depicts a portion of a conventional PMR head 10′, as viewed from the air-bearing surface (ABS). The conventional PMR head 10′ is a shielded head that includes side shields. The conventional PMR head 10′ is typically part of a merged head including the PMR head 10 and a read head (not shown) and typically resides on a slider (not shown). For clarity, the conventional PMR head 10′ is not drawn to scale.


The conventional PMR head 10′ includes components that are analogous to those in the conventional PMR head 10. Such components are labeled similarly. Thus, the conventional PMR head 10′ includes a conventional first pole 12′, alumina insulating layer 14′, alumina underlayer 16′ that may be considered part of the alumina insulating layer 14′, a conventional PMR pole 18′ that typically includes a seed layer (not shown), shield gap 26′, and shield 28′. The shield 28′ includes top shield 28A and side shield 28B portions. Similarly, the shield gap 26′ includes top gap 26A and side gap 26B portions.



FIG. 3 is a flow chart depicting a conventional method 50 for fabricating the conventional PMR head having a side shield. For simplicity, some steps are omitted. The conventional method 50 is described in the context of the conventional PMR head 10′. The conventional method 50 starts during formation of the PMR pole 18′. The PMR pole 18′ is defined, via step 52. The shield gap 26′ is deposited, via step 54. Thus, both the top gap 26A and the side gap 26B are deposited in step 54. A photoresist mask (not shown) for the shield 28′ is provided, via step 56. The shield 28′ is plated, via step 58. The photoresist mask used for the shield 28′ is then removed, via step 60. Fabrication of the PMR head 10′ is then completed, via step 62. Thus, the PMR head 10′ may be formed.


Although the conventional method 50 may be used to fabricate the conventional PMR head 10′, there are significant drawbacks. For example, the throat height (length perpendicular to the ABS) of the top shield portion 28A and the side shield portion 28B are the same. Similarly, the thicknesses of the top shield gap portion 26A and the side shield gap portions 26B are the same. This may adversely affect performance of the conventional PMR head 10′. In addition, the photolithography carried out for forming the resist masks in step 56 takes place on the pole 18′. As a result, the thickness of the mask may be uneven. Poor edge definition and location may thus result.


Accordingly, what is needed is an improved method for fabricating a PMR head.


SUMMARY

A method and system for providing a perpendicular magnetic recording head are disclosed. The method and system include forming a perpendicular magnetic recording pole having a bottom and a top wider than the bottom. The method and system also include depositing a side gap over the PMR pole and providing a side shield on the side gap. The method and system also include performing a planarization step that removes a portion of the side shield on the PMR pole. The method and system also include providing a top gap on the PMR pole. The top gap covers substantially only the PMR pole. The method and system further include providing a top shield.





BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS


FIG. 1 is diagram depicting a conventional PMR head.



FIG. 2 is diagram depicting another conventional PMR head.



FIG. 3 is a flow chart depicting a conventional method for fabricating a PMR head having side shields.



FIG. 4 is a flow chart depicting one embodiment of a method for fabricating a PMR head.



FIGS. 5A-5E are diagrams depicting the ABS views of an exemplary embodiment of a perpendicular magnetic recording head during fabrication.



FIG. 6 is a diagram depicting the ABS views of another exemplary embodiment of a perpendicular magnetic recording head during fabrication.



FIG. 7 is a diagram depicting the ABS views of another exemplary embodiment of a perpendicular magnetic recording head during fabrication.



FIG. 8 is a diagram depicting the ABS views of another exemplary embodiment of a perpendicular magnetic recording head during fabrication.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS


FIG. 4 is a flow chart depicting one embodiment of a method 100 for fabricating a PMR head. FIGS. 5A-5E are diagrams depicting the ABS views of an exemplary embodiment of a PMR head 200 during fabrication. Referring to FIGS. 4-5E, the method 100 is described in the context of the PMR head 200. For simplicity, some steps may be omitted. In addition, for clarity, the PMR head 200 is not drawn to scale. The PMR head 200 is preferably part of a merged head that also includes a read head (not shown) and resides on a slider (not shown). The method 100 also preferably commences after formation of a first pole and formation of layers that will reside under a second pole. For clarity, the PMR head 200 is not drawn to scale.


A PMR pole is formed, via step 102. In a preferred embodiment, the pole is formed using one of two processes. One process used is termed a pseudo-damascene process. In such a process, step 102 preferably includes depositing a layer of photoresist, providing a trench having a desired shape for the PMR pole in the photoresist, depositing the PMR pole in the trench, and removing the photoresist. The other such process is termed a mill-and-lap process. In the mill-and-lap process, material for the PMR pole is plated, a mask that covers the PMR pole is formed, and the PMR pole is defined (or trimmed) using the mask, preferably using an ion mill. In forming the PMR pole in either the pseudo damascene or the mill-and-lap process, multiple layers may be provided. For example seed and/or glue layers may be provided below the PMR pole. In the mill-and-lap process, a planarization stop layer may be provided on the PMR pole layer. In the pseudo-damascene process, a planarization stop layer is preferably not used. Instead, support structures spaced apart from the PMR pole may be used during a planarization. In addition, the PMR pole may be formed in step 102 on a metal underlayer, directly on an insulator, or on another layer. The PMR pole may be sputter deposited or electroplated using high moment materials. FIG. 5A depicts one embodiment of a PMR head 200 after step 102 is performed. The PMR head 200 includes an insulator 201 that preferably resides on a first pole (not shown). In the embodiment shown, a metal underlayer 202 is used. The PMR pole 204 is also depicted. The PMR pole 204 is preferably trapezoidal in shape, having a top that is wider than the bottom. Multiple layers 206 may also have been provided on the PMR pole 204. However, in another embodiment, the layers 206 may not be used.


A side gap is deposited on the PMR pole 204, via step 104. Examples of processes used for depositing the side gap may include physical vapor deposition, collimated physical vapor deposition, ion beam deposition, atomic layer deposition, and chemical vapor deposition. In a preferred embodiment, the side gap is blanket deposited on the PMR head 100. Also in a preferred embodiment, atomic layer deposition is used in step 104. The side gap is preferably at least five hundred Angstroms thick and no more than two thousand Angstroms thick. The thickness of the side gap deposited in step 104 may be selected based on the design requirements of the PMR head 200. FIG. 5B depicts the PMR head 200 after deposition of the side gap 208. The side gap 208 may be insulating. In a preferred embodiment, the side gap 208 includes at least one of aluminum oxide, silicon oxide, silicon nitride, and tantalum oxide. Depending upon the process used, the thickness of the side gap 208 on the side walls of the PMR pole 204 may be different than the thickness on the top (horizontal portion) of the PMR pole 204. For example, physical vapor deposition and collimated physical vapor deposition may result in a side gap 208 that is thinner on the sidewalls than on the top of the PMR pole 204. Ion beam deposition, atomic layer deposition, and chemical vapor deposition may result in a side gap 208 that has almost the same thickness on the top of the PMR pole 204 as the sidewalls of the PMR pole 204. In addition, if other deposition techniques are used, the side gap 208 may have a different shape. For example, if conformal deposition techniques, such as atomic layer deposition, are used, the side gap may conform to shape of the PMR pole 204. In such an embodiment, the side walls of the side gap may have a negative angle similar to θ.


A side shield is deposited on the PMR head, via step 106. Step 106 may also include depositing seed layers for the side shield and forming a mask having an aperture in the region of the PMR pole 204. In a preferred embodiment, the side shield is plated. However, in another embodiment, another deposition method may be used. FIG. 5C depicts the PMR head 200 after step 106 is performed. Thus, the side shield 210 is shown. The layer for the side shield 210 encapsulates the PMR pole 204.


A planarization is performed, via step 108. In a preferred embodiment, a chemical mechanical planarization (CMP) is used. The planarization step removes a portion of the side shield 210 and exposes the stack for the PMR pole 204. In addition, the top portion of the side gap 208 is removed. FIG. 5D depicts the PMR head 200 after step 108 has been performed. Thus, side shields 210A and 210B remain. In addition, the stack including the PMR pole 204 has been exposed. A portion of the side gaps 208A and 208B are also exposed. In the embodiment shown, a portion of the top layer(s) 206 has been removed, leaving the layers 206′. In another embodiment, the layers 206′ may be completely removed. A substantially flat surface 211 is also provided by the planarization.


A top gap is provided on the PMR pole, via step 110. The top gap may be formed of the same material as the side gaps 210A and 210B or may be formed of another material. In some embodiments, step 110 is performed when the PMR pole 204 is formed. In such an embodiment, the top gap may be formed under the planarization layer described above with respect to the mill-and-lap process. However, in another embodiment, the top gap 110 may be formed at a different time than the PMR pole 204. The top shield is provided, via step 112. The top shield is preferably formed by plating the shield. In addition, a seed layer and an etch to remove a portion of the top shield may be performed in step 112. However, another deposition method could be used. Fabrication of the PMR head 200 may then be completed, via step 114. FIG. 5E depicts the PMR head 200 after step 112 has been performed. Thus, the top gap 212 and the top shield 214 have been provided. In the embodiment shown, the top gap 212 covers substantially only the PMR pole 204. In the embodiment shown in FIG. 5E, the thickness, t, of the top gap 212 is different from the width, w, of the side gaps 208A and 208B. In one embodiment, the width, w, is at least twice the thickness, t. For example, in one embodiment, the side gaps 208A and 208B may be more than one hundred nanometers, while the top shield gap 212 may be fifty nanometers or less. In another embodiment, the width, w, is at least three times the thickness, t.


Thus, the method 100 may be used to provide the PMR head 200. Because they are formed separately, the top gap 212 and the side gaps 208A and 208B can be configured independently. Thus, the width of side gaps 208A and 208B can differ from the thickness of the top gap 212. More particularly, the width of the side gaps 208A and 208B may, for example, be two to three times the thickness of the top gap 212. Consequently, better magnetic performance can be achieved. In addition, because the planarization performed in step 108 results in a flat topology, the top shield 212 is provided on a relatively flat topology. Consequently, better edge definition and edge location control may be provided. In addition, the side shields 210A and 210B and the top shield 214 may be configured independently. As a result, the throat height (perpendicular to the page in FIGS. 5A-5E) of the top shield 214 may be set independently from the throat height of the side shields 210A and 210B. For example, the throat height of the top shield 214 may be set to 0.2 μm or less, while the throat height of the side shields 210A and 210B may be larger. Consequently, the desired field strength, gradient, and angle may be achieved while providing side shields for reducing inadvertent side erasure of adjacent tracks. Consequently, a reduced track pitch for ultrahigh density recording may be achieved. Furthermore, the method 100 may be relatively easily incorporated into existing methods for fabricating PMR heads. Thus, the benefits of the PMR head 200 may be achieved without radically altering existing fabrication methods.



FIG. 6 is a diagram depicting the ABS views of another exemplary embodiment of a PMR head 200′ during fabrication. In addition, for clarity, the PMR head 200′ is not drawn to scale. The PMR head 200′ is preferably formed using the method 100. In addition, the PMR head 200′ is analogous to the PMR head 200 and, therefore, has components that are labeled similarly. The PMR head 200′ thus includes a PMR pole 204′ that may be formed on a metal underlayer 202′ and underlying insulator 201′, side gaps 208A′ and 208B′, side shields 210A′ and 210B′, top gap 212′ and top shield 214′. The PMR head 200′ may also include additional layers 206′.


The top gap 212′ in the PMR head 200′ is fabricated in step 110 of the method 100. However, for the PMR head 200′, the top gap 212′ is configured to separate the top shield 214′ from the side shields 210A′ and 210B′. However, for the PMR head 200′, the side gaps 208A′ and 208B′ can still be configured separately from the top gap 212′. Similarly, the side shields 210A′ and 210B′ may be configured separately. In addition, the topology of the PMR head 200′ after formation of the top gap 212′ and in preparation for providing the top shield 214′ is quite flat. Consequently, the benefits of the PMR head 200 may also be achieved for the PMR head 200′.



FIG. 7 is a diagram depicting the ABS views of another exemplary embodiment of a PMR head 200″ during fabrication. In addition, for clarity, the PMR head 200″ is not drawn to scale. The PMR head 200″ is preferably formed using the method 100. In addition, the PMR head 200″ is analogous to the PMR head 200 and, therefore, has components that are labeled similarly. The PMR head 200″ thus includes a PMR pole 204″ that may be formed on a metal underlayer 202″ and underlying insulator 201″, side gaps 208A″ and 208B″, side shields 210A″ and 210B″, top gap 212″ and top shield 214″. The PMR head 200″ may also include additional layers 206″.


The top gap 212″ in the PMR head 200″ is fabricated in step 110 of the method 100. However, for the PMR head 200″, the top gap 212″ is configured extend over the side gaps 208A″ and 208B″ without separating the top shield 214″ from the side shields 210A″ and 210B″. For the PMR head 200″, the side gaps 208A″ and 208B″ can still be configured separately from the top gap 212″. Similarly, the side shields 210A″ and 210B″ may be configured separately. In addition, the topology of the PMR head 200″ after formation of the top gap 212″ and in preparation for providing the top shield 214″ is quite flat. Consequently, the benefits of the PMR heads 200 and 200′ may also be achieved for the PMR head 200″.



FIG. 8 is a diagram depicting the ABS views of another exemplary embodiment of a PMR head 200′″ during fabrication. For clarity, the PMR head 200′″ is not drawn to scale. The PMR head 200′″ is preferably formed using the method 100. In addition, the PMR head 200′″ is analogous to the PMR head 200 and, therefore, has components that are labeled similarly. The PMR head 200′″ thus includes a PMR pole 204′″ that may be formed on a metal underlayer 202′ and underlying insulator 201′″, side gaps 208A′″ and 208B′″, side shields 210A′ and 210B′″, top gap 212′ and top shield 214′″. The PMR head 200′ may also include additional layers 206′.


The side gaps 208A′″ and 208B′″ in the PMR head 200′ are deposited in step 104 of the method 100. For the PMR head 200′, a conformal deposition technique, such as atomic layer deposition, is used in step 104. Consequently, the sidewalls of the side gaps 208A′″ and 208B′ have a negative angle that is similar to that of the PMR pole 204′″. The side gaps 208A′″ and 208B′″ can still be configured separately from the top gap 212′″. Similarly, the side shields 210A′ and 210B′″ may be configured separately. In addition, the topology of the PMR head 200′″ after formation of the top gap 212′ and in preparation for providing the top shield 214′″ is quite flat. Consequently, the benefits of the PMR heads 200, 200′, and 200″ may also be achieved for the PMR head 200′.


Thus, using the method 100, fabrication, performance, and reliability of PMR transducers 200, 200′, 200″, and 200′″ may be improved.

Claims
  • 1. A perpendicular magnetic recording (PMR) head including an air-bearing surface (ABS) and comprising: a PMR pole having at least one side, a bottom, and a top wider than the bottom;at least one side gap encapsulating the at least one side of the PMR pole, the at least one side gap having at least one width;at least one side shield, the at least one side gap residing between the PMR pole and the at least one side shield;a top gap on the PMR pole, the top gap having a thickness, a ratio of the at least one width to the thickness being greater than one; anda top shield, a portion of the top gap residing between at least a portion of the top shield and the at least one side shield;wherein the at least one side shield has a side shield throat height in a direction perpendicular to the ABS, the top shield has a top shield throat height in the direction, and the side shield throat height being different from the top shield throat height.
  • 2. The PMR head of claim 1 wherein the ratio is at least two.
  • 3. The PMR head of claim 1 wherein the ratio is at least three.
  • 4. The PMR head of claim 1 further comprising: a metal underlayer under the PMR pole; andwherein the PMR pole includes at least one magnetic pole layer.
  • 5. The PMR head claim 1 wherein the side gap further includes at least one of an aluminum oxide layer, a silicon oxide layer, a silicon nitride layer, and a tantalum oxide layer.
  • 6. A perpendicular magnetic recording (PMR) head comprising: a PMR pole having at least one side, a bottom, and a top wider than the bottom, the PMR pole including a metal underlayer and at least one magnetic layer;at least one side gap encapsulating the at least one side of the PMR pole, the at least one side gap having at least one width;at least one side shield having a side shield throat height, the at least one side gap residing between the PMR pole and the at least one side shield;a top gap on the PMR pole, the top gap having a thickness, a ratio of the at least one width to the thickness being greater than two; anda top shield having a top shield throat height, the side shield throat height being different from the top shield throat height, a portion of the top gap residing between at least a portion of the top shield and the at least one side shield;wherein the at least one side shield has a side shield throat height in a direction perpendicular to the ABS, the top shield has a top shield throat height in the direction, and the side shield throat height being different from the top shield throat height.
CROSS REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of co-pending application Ser. No. 11/605,635 filed on Nov. 29, 2006, which is hereby incorporated by reference.

US Referenced Citations (616)
Number Name Date Kind
6016290 Chen et al. Jan 2000 A
6018441 Wu et al. Jan 2000 A
6025978 Hoshi et al. Feb 2000 A
6025988 Yan Feb 2000 A
6032353 Hiner et al. Mar 2000 A
6033532 Minami Mar 2000 A
6034851 Zarouri et al. Mar 2000 A
6043959 Crue et al. Mar 2000 A
6046885 Aimonetti et al. Apr 2000 A
6049650 Jerman et al. Apr 2000 A
6055138 Shi Apr 2000 A
6058094 Davis et al. May 2000 A
6073338 Liu et al. Jun 2000 A
6078479 Nepela et al. Jun 2000 A
6081499 Berger et al. Jun 2000 A
6094803 Carlson et al. Aug 2000 A
6099362 Viches et al. Aug 2000 A
6103073 Thayamballi Aug 2000 A
6108166 Lederman Aug 2000 A
6118629 Huai et al. Sep 2000 A
6118638 Knapp et al. Sep 2000 A
6125018 Takagishi et al. Sep 2000 A
6130779 Carlson et al. Oct 2000 A
6134089 Barr et al. Oct 2000 A
6136166 Shen et al. Oct 2000 A
6137661 Shi et al. Oct 2000 A
6137662 Huai et al. Oct 2000 A
6160684 Heist et al. Dec 2000 A
6163426 Nepela et al. Dec 2000 A
6166891 Lederman et al. Dec 2000 A
6173486 Hsiao et al. Jan 2001 B1
6175476 Huai et al. Jan 2001 B1
6178066 Barr Jan 2001 B1
6178070 Hong et al. Jan 2001 B1
6178150 Davis Jan 2001 B1
6181485 He Jan 2001 B1
6181525 Carlson Jan 2001 B1
6185051 Chen et al. Feb 2001 B1
6185077 Tong et al. Feb 2001 B1
6185081 Simion et al. Feb 2001 B1
6188549 Wiitala Feb 2001 B1
6190764 Shi et al. Feb 2001 B1
6193584 Rudy et al. Feb 2001 B1
6195229 Shen et al. Feb 2001 B1
6198608 Hong et al. Mar 2001 B1
6198609 Barr et al. Mar 2001 B1
6201673 Rottmayer et al. Mar 2001 B1
6204998 Katz Mar 2001 B1
6204999 Crue et al. Mar 2001 B1
6212153 Chen et al. Apr 2001 B1
6215625 Carlson Apr 2001 B1
6219205 Yuan et al. Apr 2001 B1
6221218 Shi et al. Apr 2001 B1
6222707 Huai et al. Apr 2001 B1
6229782 Wang et al. May 2001 B1
6230959 Heist et al. May 2001 B1
6233116 Chen et al. May 2001 B1
6233125 Knapp et al. May 2001 B1
6237215 Hunsaker et al. May 2001 B1
6252743 Bozorgi Jun 2001 B1
6255721 Roberts Jul 2001 B1
6258468 Mahvan et al. Jul 2001 B1
6266216 Hikami et al. Jul 2001 B1
6271604 Frank, Jr. et al. Aug 2001 B1
6275354 Huai et al. Aug 2001 B1
6277505 Shi et al. Aug 2001 B1
6282056 Feng et al. Aug 2001 B1
6296955 Hossain et al. Oct 2001 B1
6297955 Frank, Jr. et al. Oct 2001 B1
6304414 Crue, Jr. et al. Oct 2001 B1
6307715 Berding et al. Oct 2001 B1
6310746 Hawwa et al. Oct 2001 B1
6310750 Hawwa et al. Oct 2001 B1
6317290 Wang et al. Nov 2001 B1
6317297 Tong et al. Nov 2001 B1
6322911 Fukagawa et al. Nov 2001 B1
6330136 Wang et al. Dec 2001 B1
6330137 Knapp et al. Dec 2001 B1
6333830 Rose et al. Dec 2001 B2
6340533 Ueno et al. Jan 2002 B1
6349014 Crue, Jr. et al. Feb 2002 B1
6351355 Min et al. Feb 2002 B1
6353318 Sin et al. Mar 2002 B1
6353511 Shi et al. Mar 2002 B1
6356412 Levi et al. Mar 2002 B1
6359779 Frank, Jr. et al. Mar 2002 B1
6369983 Hong Apr 2002 B1
6376964 Young et al. Apr 2002 B1
6377535 Chen et al. Apr 2002 B1
6381095 Sin et al. Apr 2002 B1
6381105 Huai et al. Apr 2002 B1
6389499 Frank, Jr. et al. May 2002 B1
6392850 Tong et al. May 2002 B1
6396660 Jensen et al. May 2002 B1
6399179 Hanrahan et al. Jun 2002 B1
6400526 Crue, Jr. et al. Jun 2002 B2
6404600 Hawwa et al. Jun 2002 B1
6404601 Rottmayer et al. Jun 2002 B1
6404706 Stovall et al. Jun 2002 B1
6410170 Chen et al. Jun 2002 B1
6411522 Frank, Jr. et al. Jun 2002 B1
6417998 Crue, Jr. et al. Jul 2002 B1
6417999 Knapp et al. Jul 2002 B1
6418000 Gibbons et al. Jul 2002 B1
6418048 Sin et al. Jul 2002 B1
6421211 Hawwa et al. Jul 2002 B1
6421212 Gibbons et al. Jul 2002 B1
6424505 Lam et al. Jul 2002 B1
6424507 Lederman et al. Jul 2002 B1
6430009 Komaki et al. Aug 2002 B1
6430806 Chen et al. Aug 2002 B1
6433965 Gopinathan et al. Aug 2002 B1
6433968 Shi et al. Aug 2002 B1
6433970 Knapp et al. Aug 2002 B1
6437945 Hawwa et al. Aug 2002 B1
6445536 Rudy et al. Sep 2002 B1
6445542 Levi et al. Sep 2002 B1
6445553 Barr et al. Sep 2002 B2
6445554 Dong et al. Sep 2002 B1
6447935 Zhang et al. Sep 2002 B1
6448765 Chen et al. Sep 2002 B1
6451514 Iitsuka Sep 2002 B1
6452742 Crue et al. Sep 2002 B1
6452765 Mahvan et al. Sep 2002 B1
6456465 Louis et al. Sep 2002 B1
6459552 Liu et al. Oct 2002 B1
6462920 Karimi Oct 2002 B1
6466401 Hong et al. Oct 2002 B1
6466402 Crue, Jr. et al. Oct 2002 B1
6466404 Crue, Jr. et al. Oct 2002 B1
6468436 Shi et al. Oct 2002 B1
6469877 Knapp et al. Oct 2002 B1
6477019 Matono et al. Nov 2002 B2
6479096 Shi et al. Nov 2002 B1
6483662 Thomas et al. Nov 2002 B1
6487040 Hsiao et al. Nov 2002 B1
6487056 Gibbons et al. Nov 2002 B1
6490125 Barr Dec 2002 B1
6496330 Crue, Jr. et al. Dec 2002 B1
6496334 Pang et al. Dec 2002 B1
6504676 Hiner et al. Jan 2003 B1
6512657 Heist et al. Jan 2003 B2
6512659 Hawwa et al. Jan 2003 B1
6512661 Louis Jan 2003 B1
6512690 Qi et al. Jan 2003 B1
6515573 Dong et al. Feb 2003 B1
6515791 Hawwa et al. Feb 2003 B1
6532823 Knapp et al. Mar 2003 B1
6535363 Hosomi et al. Mar 2003 B1
6552874 Chen et al. Apr 2003 B1
6552928 Qi et al. Apr 2003 B1
6577470 Rumpler Jun 2003 B1
6583961 Levi et al. Jun 2003 B2
6583968 Scura et al. Jun 2003 B1
6597548 Yamanaka et al. Jul 2003 B1
6611398 Rumpler et al. Aug 2003 B1
6618223 Chen et al. Sep 2003 B1
6629357 Akoh Oct 2003 B1
6633464 Lai et al. Oct 2003 B2
6636394 Fukagawa et al. Oct 2003 B1
6639291 Sin et al. Oct 2003 B1
6650503 Chen et al. Nov 2003 B1
6650506 Risse Nov 2003 B1
6654195 Frank, Jr. et al. Nov 2003 B1
6657816 Barr et al. Dec 2003 B1
6661621 Iitsuka Dec 2003 B1
6661625 Sin et al. Dec 2003 B1
6674610 Thomas et al. Jan 2004 B1
6680863 Shi et al. Jan 2004 B1
6683763 Hiner et al. Jan 2004 B1
6687098 Huai Feb 2004 B1
6687178 Qi et al. Feb 2004 B1
6687977 Knapp et al. Feb 2004 B2
6691226 Frank, Jr. et al. Feb 2004 B1
6697294 Qi et al. Feb 2004 B1
6700738 Sin et al. Mar 2004 B1
6700759 Knapp et al. Mar 2004 B1
6704158 Hawwa et al. Mar 2004 B2
6707083 Hiner et al. Mar 2004 B1
6713801 Sin et al. Mar 2004 B1
6721138 Chen et al. Apr 2004 B1
6721149 Shi et al. Apr 2004 B1
6721203 Qi et al. Apr 2004 B1
6724569 Chen et al. Apr 2004 B1
6724572 Stoev et al. Apr 2004 B1
6729015 Matono et al. May 2004 B2
6735850 Gibbons et al. May 2004 B1
6737281 Dang et al. May 2004 B1
6744608 Chen et al. Jun 2004 B1
6747301 Hiner et al. Jun 2004 B1
6751055 Alfoqaha et al. Jun 2004 B1
6754049 Seagle et al. Jun 2004 B1
6756071 Shi et al. Jun 2004 B1
6757140 Hawwa Jun 2004 B1
6760196 Niu et al. Jul 2004 B1
6762910 Knapp et al. Jul 2004 B1
6765756 Hong et al. Jul 2004 B1
6775902 Huai et al. Aug 2004 B1
6778358 Jiang et al. Aug 2004 B1
6781927 Heanuc et al. Aug 2004 B1
6785955 Chen et al. Sep 2004 B1
6791793 Chen et al. Sep 2004 B1
6791807 Hikami et al. Sep 2004 B1
6798616 Seagle et al. Sep 2004 B1
6798625 Ueno et al. Sep 2004 B1
6801408 Chen et al. Oct 2004 B1
6801411 Lederman et al. Oct 2004 B1
6803615 Sin et al. Oct 2004 B1
6806035 Atireklapvarodom et al. Oct 2004 B1
6807030 Hawwa et al. Oct 2004 B1
6807332 Hawwa Oct 2004 B1
6809899 Chen et al. Oct 2004 B1
6816345 Knapp et al. Nov 2004 B1
6828897 Nepela Dec 2004 B1
6829160 Qi et al. Dec 2004 B1
6829819 Crue, Jr. et al. Dec 2004 B1
6833979 Spallas et al. Dec 2004 B1
6834010 Qi et al. Dec 2004 B1
6859343 Alfoqaha et al. Feb 2005 B1
6859997 Tong et al. Mar 2005 B1
6861937 Feng et al. Mar 2005 B1
6870712 Chen et al. Mar 2005 B2
6873494 Chen et al. Mar 2005 B2
6873547 Shi et al. Mar 2005 B1
6879464 Sun et al. Apr 2005 B2
6888184 Shi et al. May 2005 B1
6888704 Diao et al. May 2005 B1
6891702 Tang May 2005 B1
6894871 Alfoqaha et al. May 2005 B2
6894877 Crue, Jr. et al. May 2005 B1
6906894 Chen et al. Jun 2005 B2
6909578 Missell et al. Jun 2005 B1
6912106 Chen et al. Jun 2005 B1
6934113 Chen Aug 2005 B1
6934129 Zhang et al. Aug 2005 B1
6940688 Jiang et al. Sep 2005 B2
6942824 Li Sep 2005 B1
6943993 Chang et al. Sep 2005 B2
6944938 Crue, Jr. et al. Sep 2005 B1
6947258 Li Sep 2005 B1
6950266 McCaslin et al. Sep 2005 B1
6954332 Hong et al. Oct 2005 B1
6954340 Shukh et al. Oct 2005 B2
6958885 Chen et al. Oct 2005 B1
6961221 Niu et al. Nov 2005 B1
6969989 Mei Nov 2005 B1
6975486 Chen et al. Dec 2005 B2
6987643 Seagle Jan 2006 B1
6989962 Dong et al. Jan 2006 B1
6989972 Stoev et al. Jan 2006 B1
7006327 Krounbi et al. Feb 2006 B2
7007372 Chen et al. Mar 2006 B1
7012832 Sin et al. Mar 2006 B1
7023658 Knapp et al. Apr 2006 B1
7026063 Ueno et al. Apr 2006 B2
7027268 Zhu et al. Apr 2006 B1
7027274 Sin et al. Apr 2006 B1
7035046 Young et al. Apr 2006 B1
7041985 Wang et al. May 2006 B1
7046490 Ueno et al. May 2006 B1
7054113 Seagle et al. May 2006 B1
7057857 Niu et al. Jun 2006 B1
7059868 Yan Jun 2006 B1
7092195 Liu et al. Aug 2006 B1
7110289 Sin et al. Sep 2006 B1
7111382 Knapp et al. Sep 2006 B1
7113366 Wang et al. Sep 2006 B1
7114241 Kubota et al. Oct 2006 B2
7116517 He et al. Oct 2006 B1
7124654 Davies et al. Oct 2006 B1
7126788 Liu et al. Oct 2006 B1
7126790 Liu et al. Oct 2006 B1
7131346 Buttar et al. Nov 2006 B1
7133253 Seagle et al. Nov 2006 B1
7134185 Knapp et al. Nov 2006 B1
7154715 Yamanaka et al. Dec 2006 B2
7170725 Zhou et al. Jan 2007 B1
7177117 Jiang et al. Feb 2007 B1
7193815 Stoev et al. Mar 2007 B1
7196871 Hsu et al. Mar 2007 B2
7196880 Anderson et al. Mar 2007 B1
7199974 Alfoqaha Apr 2007 B1
7199975 Pan Apr 2007 B1
7211339 Seagle et al. May 2007 B1
7212384 Stoev et al. May 2007 B1
7238292 He et al. Jul 2007 B1
7239478 Sin et al. Jul 2007 B1
7248431 Liu et al. Jul 2007 B1
7248433 Stoev et al. Jul 2007 B1
7248449 Seagle Jul 2007 B1
7280325 Pan Oct 2007 B1
7283327 Liu et al. Oct 2007 B1
7284316 Huai et al. Oct 2007 B1
7286329 Chen et al. Oct 2007 B1
7289303 Sin et al. Oct 2007 B1
7292409 Stoev et al. Nov 2007 B1
7296339 Yang et al. Nov 2007 B1
7307814 Seagle et al. Dec 2007 B1
7307818 Park et al. Dec 2007 B1
7310204 Stoev et al. Dec 2007 B1
7318947 Park et al. Jan 2008 B1
7333295 Medina et al. Feb 2008 B1
7337530 Stoev et al. Mar 2008 B1
7342752 Zhang et al. Mar 2008 B1
7349170 Rudman et al. Mar 2008 B1
7349179 He et al. Mar 2008 B1
7354664 Jiang et al. Apr 2008 B1
7363697 Dunn et al. Apr 2008 B1
7371152 Newman May 2008 B1
7372665 Stoev et al. May 2008 B1
7375926 Stoev et al. May 2008 B1
7379269 Krounbi et al. May 2008 B1
7386933 Krounbi et al. Jun 2008 B1
7389577 Shang et al. Jun 2008 B1
7417832 Erickson et al. Aug 2008 B1
7419891 Chen et al. Sep 2008 B1
7428124 Song et al. Sep 2008 B1
7430098 Song et al. Sep 2008 B1
7436620 Kang et al. Oct 2008 B1
7436638 Pan Oct 2008 B1
7440220 Kang et al. Oct 2008 B1
7440230 Hsu et al. Oct 2008 B2
7443632 Stoev et al. Oct 2008 B1
7444740 Chung et al. Nov 2008 B1
7493688 Wang et al. Feb 2009 B1
7508627 Zhang et al. Mar 2009 B1
7522377 Jiang et al. Apr 2009 B1
7522379 Krounbi et al. Apr 2009 B1
7522382 Pan Apr 2009 B1
7542246 Song et al. Jun 2009 B1
7551406 Thomas et al. Jun 2009 B1
7552523 He et al. Jun 2009 B1
7554767 Hu et al. Jun 2009 B1
7583466 Kermiche et al. Sep 2009 B2
7595967 Moon et al. Sep 2009 B1
7639457 Chen et al. Dec 2009 B1
7649712 Le et al. Jan 2010 B2
7660080 Liu et al. Feb 2010 B1
7672080 Tang et al. Mar 2010 B1
7672086 Jiang Mar 2010 B1
7684160 Erickson et al. Mar 2010 B1
7688546 Bai et al. Mar 2010 B1
7691434 Zhang et al. Apr 2010 B1
7695761 Shen et al. Apr 2010 B1
7712206 Jiang et al. May 2010 B2
7715147 Feldbaum et al. May 2010 B2
7719795 Hu et al. May 2010 B2
7726009 Liu et al. Jun 2010 B1
7729086 Song et al. Jun 2010 B1
7729087 Stoev et al. Jun 2010 B1
7736823 Wang et al. Jun 2010 B1
7785666 Sun et al. Aug 2010 B1
7796356 Fowler et al. Sep 2010 B1
7800858 Bajikar et al. Sep 2010 B1
7819979 Chen et al. Oct 2010 B1
7829264 Wang et al. Nov 2010 B1
7846643 Sun et al. Dec 2010 B1
7855854 Hu et al. Dec 2010 B2
7869160 Pan et al. Jan 2011 B1
7872824 Macchioni et al. Jan 2011 B1
7872833 Hu et al. Jan 2011 B2
7903372 Lee et al. Mar 2011 B2
7910267 Zeng et al. Mar 2011 B1
7911735 Sin et al. Mar 2011 B1
7911737 Jiang et al. Mar 2011 B1
7916426 Hu et al. Mar 2011 B2
7918013 Dunn et al. Apr 2011 B1
7968219 Jiang et al. Jun 2011 B1
7982989 Shi et al. Jul 2011 B1
8008912 Shang Aug 2011 B1
8012804 Wang et al. Sep 2011 B1
8015692 Zhang et al. Sep 2011 B1
8018677 Chung et al. Sep 2011 B1
8018678 Zhang et al. Sep 2011 B1
8024748 Moravec et al. Sep 2011 B1
8072705 Wang et al. Dec 2011 B1
8074345 Anguelouch et al. Dec 2011 B1
8077418 Hu et al. Dec 2011 B1
8077434 Shen et al. Dec 2011 B1
8077435 Liu et al. Dec 2011 B1
8077557 Hu et al. Dec 2011 B1
8079135 Shen et al. Dec 2011 B1
8081403 Chen et al. Dec 2011 B1
8091210 Sasaki et al. Jan 2012 B1
8097846 Anguelouch et al. Jan 2012 B1
8104166 Zhang et al. Jan 2012 B1
8116043 Leng et al. Feb 2012 B2
8116171 Lee Feb 2012 B1
8125856 Li et al. Feb 2012 B1
8134794 Wang Mar 2012 B1
8136224 Sun et al. Mar 2012 B1
8136225 Zhang et al. Mar 2012 B1
8136805 Lee Mar 2012 B1
8141235 Zhang Mar 2012 B1
8146236 Luo et al. Apr 2012 B1
8149536 Yang et al. Apr 2012 B1
8151441 Rudy et al. Apr 2012 B1
8163185 Sun et al. Apr 2012 B1
8164760 Willis Apr 2012 B2
8164855 Gibbons et al. Apr 2012 B1
8164864 Kaiser et al. Apr 2012 B2
8165709 Rudy Apr 2012 B1
8166631 Tran et al. May 2012 B1
8166632 Zhang et al. May 2012 B1
8169473 Yu et al. May 2012 B1
8171618 Wang et al. May 2012 B1
8179636 Bai et al. May 2012 B1
8191237 Luo et al. Jun 2012 B1
8194365 Leng et al. Jun 2012 B1
8194366 Li et al. Jun 2012 B1
8196285 Zhang et al. Jun 2012 B1
8200054 Li et al. Jun 2012 B1
8203800 Li et al. Jun 2012 B2
8208350 Hu et al. Jun 2012 B1
8220140 Wang et al. Jul 2012 B1
8222599 Chien Jul 2012 B1
8225488 Zhang et al. Jul 2012 B1
8227023 Liu et al. Jul 2012 B1
8228633 Tran et al. Jul 2012 B1
8231796 Li et al. Jul 2012 B1
8233248 Li et al. Jul 2012 B1
8248896 Yuan et al. Aug 2012 B1
8254060 Shi et al. Aug 2012 B1
8257597 Guan et al. Sep 2012 B1
8259410 Bai et al. Sep 2012 B1
8259539 Hu et al. Sep 2012 B1
8262918 Li et al. Sep 2012 B1
8262919 Luo et al. Sep 2012 B1
8264797 Emley Sep 2012 B2
8264798 Guan et al. Sep 2012 B1
8270126 Roy et al. Sep 2012 B1
8276258 Tran et al. Oct 2012 B1
8277669 Chen et al. Oct 2012 B1
8279719 Hu et al. Oct 2012 B1
8284517 Sun et al. Oct 2012 B1
8288204 Wang et al. Oct 2012 B1
8289821 Huber Oct 2012 B1
8291743 Shi et al. Oct 2012 B1
8307539 Rudy et al. Nov 2012 B1
8307540 Tran et al. Nov 2012 B1
8308921 Hiner et al. Nov 2012 B1
8310785 Zhang et al. Nov 2012 B1
8310901 Batra et al. Nov 2012 B1
8315019 Mao et al. Nov 2012 B1
8316527 Hong et al. Nov 2012 B2
8320076 Shen et al. Nov 2012 B1
8320077 Tang et al. Nov 2012 B1
8320219 Wolf et al. Nov 2012 B1
8320220 Yuan et al. Nov 2012 B1
8320722 Yuan et al. Nov 2012 B1
8322022 Yi et al. Dec 2012 B1
8322023 Zeng et al. Dec 2012 B1
8325569 Shi et al. Dec 2012 B1
8333008 Sin et al. Dec 2012 B1
8334093 Zhang et al. Dec 2012 B2
8336194 Yuan et al. Dec 2012 B2
8339738 Tran et al. Dec 2012 B1
8341826 Jiang et al. Jan 2013 B1
8343319 Li et al. Jan 2013 B1
8343364 Gao et al. Jan 2013 B1
8349195 Si et al. Jan 2013 B1
8351307 Wolf et al. Jan 2013 B1
8357244 Zhao et al. Jan 2013 B1
8373945 Luo et al. Feb 2013 B1
8375564 Luo et al. Feb 2013 B1
8375565 Hu et al. Feb 2013 B2
8381391 Park et al. Feb 2013 B2
8385157 Champion et al. Feb 2013 B1
8385158 Hu et al. Feb 2013 B1
8394280 Wan et al. Mar 2013 B1
8400731 Li et al. Mar 2013 B1
8404128 Zhang et al. Mar 2013 B1
8404129 Luo et al. Mar 2013 B1
8405930 Li et al. Mar 2013 B1
8409453 Jiang et al. Apr 2013 B1
8413317 Wan et al. Apr 2013 B1
8416540 Li et al. Apr 2013 B1
8419953 Su et al. Apr 2013 B1
8419954 Chen et al. Apr 2013 B1
8422176 Leng et al. Apr 2013 B1
8422342 Lee Apr 2013 B1
8422841 Shi et al. Apr 2013 B1
8424192 Yang et al. Apr 2013 B1
8441756 Sun et al. May 2013 B1
8443510 Shi et al. May 2013 B1
8444866 Guan et al. May 2013 B1
8449948 Medina et al. May 2013 B2
8451556 Wang et al. May 2013 B1
8451563 Zhang et al. May 2013 B1
8454846 Zhou et al. Jun 2013 B1
8455119 Jiang et al. Jun 2013 B1
8456961 Wang et al. Jun 2013 B1
8456963 Hu et al. Jun 2013 B1
8456964 Yuan et al. Jun 2013 B1
8456966 Shi et al. Jun 2013 B1
8456967 Mallary Jun 2013 B1
8458892 Si et al. Jun 2013 B2
8462592 Wolf et al. Jun 2013 B1
8468682 Zhang Jun 2013 B1
8472288 Wolf et al. Jun 2013 B1
8480911 Osugi et al. Jul 2013 B1
8486285 Zhou et al. Jul 2013 B2
8486286 Gao et al. Jul 2013 B1
8488272 Tran et al. Jul 2013 B1
8491801 Tanner et al. Jul 2013 B1
8491802 Gao et al. Jul 2013 B1
8493693 Zheng et al. Jul 2013 B1
8493695 Kaiser et al. Jul 2013 B1
8495813 Hu et al. Jul 2013 B1
8498084 Leng et al. Jul 2013 B1
8506828 Osugi et al. Aug 2013 B1
8514517 Batra et al. Aug 2013 B1
8518279 Wang et al. Aug 2013 B1
8518832 Yang et al. Aug 2013 B1
8520336 Liu et al. Aug 2013 B1
8520337 Liu et al. Aug 2013 B1
8524068 Medina et al. Sep 2013 B2
8526275 Yuan et al. Sep 2013 B1
8531801 Xiao et al. Sep 2013 B1
8532450 Wang et al. Sep 2013 B1
8533937 Wang et al. Sep 2013 B1
8537494 Pan et al. Sep 2013 B1
8537495 Luo et al. Sep 2013 B1
8537502 Park et al. Sep 2013 B1
8545999 Leng et al. Oct 2013 B1
8547659 Bai et al. Oct 2013 B1
8547667 Roy et al. Oct 2013 B1
8547730 Shen et al. Oct 2013 B1
8555486 Medina et al. Oct 2013 B1
8559141 Pakala et al. Oct 2013 B1
8563146 Zhang et al. Oct 2013 B1
8565049 Tanner et al. Oct 2013 B1
8576517 Tran et al. Nov 2013 B1
8578594 Jiang et al. Nov 2013 B2
8582238 Liu et al. Nov 2013 B1
8582241 Yu et al. Nov 2013 B1
8582253 Zheng et al. Nov 2013 B1
8588039 Shi et al. Nov 2013 B1
8593914 Wang et al. Nov 2013 B2
8597528 Roy et al. Dec 2013 B1
8599520 Liu et al. Dec 2013 B1
8599657 Lee Dec 2013 B1
8603593 Roy et al. Dec 2013 B1
8607438 Gao et al. Dec 2013 B1
8607439 Wang et al. Dec 2013 B1
8611035 Bajikar et al. Dec 2013 B1
8611054 Shang et al. Dec 2013 B1
8611055 Pakala et al. Dec 2013 B1
8614864 Hong et al. Dec 2013 B1
8619512 Yuan et al. Dec 2013 B1
8625233 Ji et al. Jan 2014 B1
8625941 Shi et al. Jan 2014 B1
8628672 Si et al. Jan 2014 B1
8630068 Mauri et al. Jan 2014 B1
8634280 Wang et al. Jan 2014 B1
8638529 Leng et al. Jan 2014 B1
8643980 Fowler et al. Feb 2014 B1
8649123 Zhang et al. Feb 2014 B1
8665561 Knutson et al. Mar 2014 B1
8670211 Sun et al. Mar 2014 B1
8670213 Zeng et al. Mar 2014 B1
8670214 Knutson et al. Mar 2014 B1
8670294 Shi et al. Mar 2014 B1
8670295 Hu et al. Mar 2014 B1
8675318 Ho et al. Mar 2014 B1
8675455 Krichevsky et al. Mar 2014 B1
8681594 Shi et al. Mar 2014 B1
8689430 Chen et al. Apr 2014 B1
8693141 Elliott et al. Apr 2014 B1
8703397 Zeng et al. Apr 2014 B1
8705205 Li et al. Apr 2014 B1
8711518 Zeng et al. Apr 2014 B1
8711528 Xiao et al. Apr 2014 B1
8717709 Shi et al. May 2014 B1
8720044 Tran et al. May 2014 B1
8721902 Wang et al. May 2014 B1
8724259 Liu et al. May 2014 B1
8749790 Tanner et al. Jun 2014 B1
8749920 Knutson et al. Jun 2014 B1
8753903 Tanner et al. Jun 2014 B1
8760807 Zhang et al. Jun 2014 B1
8760818 Diao et al. Jun 2014 B1
8760819 Liu et al. Jun 2014 B1
8760822 Li et al. Jun 2014 B1
8760823 Chen et al. Jun 2014 B1
8763235 Wang et al. Jul 2014 B1
8780498 Jiang et al. Jul 2014 B1
8780505 Xiao Jul 2014 B1
8786983 Liu et al. Jul 2014 B1
8790524 Luo et al. Jul 2014 B1
8790527 Luo et al. Jul 2014 B1
8792208 Liu et al. Jul 2014 B1
8792312 Wang et al. Jul 2014 B1
8793866 Zhang et al. Aug 2014 B1
8797680 Luo et al. Aug 2014 B1
8797684 Tran et al. Aug 2014 B1
8797686 Bai et al. Aug 2014 B1
8797692 Guo et al. Aug 2014 B1
20050068669 Hsu et al. Mar 2005 A1
20050068678 Hsu et al. Mar 2005 A1
20060002020 Pokhil et al. Jan 2006 A1
20060044681 Le et al. Mar 2006 A1
20060044682 Le et al. Mar 2006 A1
20060082924 Etoh et al. Apr 2006 A1
20070268625 Jiang et al. Nov 2007 A1
20100290157 Zhang et al. Nov 2010 A1
20110086240 Xiang et al. Apr 2011 A1
20120111826 Chen et al. May 2012 A1
20120216378 Emley et al. Aug 2012 A1
20120237878 Zeng et al. Sep 2012 A1
20120298621 Gao Nov 2012 A1
20130216702 Kaiser et al. Aug 2013 A1
20130216863 Li et al. Aug 2013 A1
20130257421 Shang et al. Oct 2013 A1
20140154529 Yang et al. Jun 2014 A1
20140175050 Zhang et al. Jun 2014 A1
Divisions (1)
Number Date Country
Parent 11605635 Nov 2006 US
Child 14220012 US