The present disclosure relates to a phase distribution design method, a phase distribution design device, a phase distribution design program, and a recording medium.
Patent Literature 1 describes a semiconductor light-emitting device including a phase modulation layer in which different-refractive-index regions are distributed in a two-dimensional shape. The phase modulation layer is supplied with light from an active layer, and light oscillates in a plane perpendicular to a thickness direction of the phase modulation layer. Accordingly, an arbitrary light image is output in a direction which is oblique to the thickness direction of the phase modulation layer. Patent Literature 1 discloses a method of designing a rotation angle distribution of the centroids of the different-refractive-index regions, that is, a phase distribution of the phase modulation layer, near lattice points of a tetragonal lattice using a repeating Fourier method (a GS method) based on a desired light image.
Devices for outputting an arbitrary light image by controlling a phase spectrum and an intensity spectrum of light which are output from a plurality of light emitting points arranged in a two-dimensional shape have been studied. In the related art, a device that individually modulates phases of light at a plurality of points arranged in a two-dimensional shape is known for such devices. For example, a semiconductor light-emitting device called a static-integrable phase modulating (S-iPM) laser has a structure including a phase modulation layer provided on a substrate. The phase modulation layer includes a basic layer and a plurality of different-refractive-index regions with a refractive index which is different from a refractive index of the basic layer. A virtual tetragonal lattice is set in a plane perpendicular to the thickness direction of the phase modulation layer. In this case, the different-refractive-index regions are arranged such that each position of the centroids departs from a position of the corresponding lattice point of the tetragonal lattice according to the phase distribution designed on the basis of a light image to be output. The semiconductor light-emitting device outputs light for forming a light image of an arbitrary shape in a direction oblique to a normal direction of a principal surface of the substrate.
In the related art, in such a device, a distribution of phase values (a phase distribution) at a plurality of points is designed on the basis of a single light image such as the semiconductor light-emitting device described in Patent Literature 1. On the other hand, there is a technique of forming a hologram by overlapping a plurality of light images on one area to cause the light images to interfere with each other. In such a technique, phases of the plurality of light images have to be synchronized with each other in order to cause a predetermined interference effect in the obtained hologram. However, when phase distributions for generating the plurality of light images are individually designed, it is difficult to synchronize the phases of the plurality of light images with each other.
The present disclosure provides a phase distribution design method, a phase distribution design device, a phase distribution design program, and a recording medium that can synchronize phases of a plurality of light images with each other.
A first phase distribution design method according to the present disclosure is a method of designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The first phase distribution design method includes a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each of the two or more phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas is made the same as the phase distribution in the wave number space of the third function in one phase modulation area of the two or more phase modulation areas, the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space, and the third function is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the first phase distribution design method, after the first to third steps have been performed, the second step and the third step are repeated while replacing the second function of the second step with the fourth function. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each of the two or more phase modulation areas.
A first phase distribution design device according to the present disclosure is a device for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The first phase distribution design device includes: a first processing unit, a second processing unit, and a third processing unit. The first processing unit sets a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space for each of the two or more phase modulation areas and converts the first function to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. The second processing unit replaces the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the real space and converts the second function subjected to the replacement to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. The third processing unit makes the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas the same as the phase distribution in the wave number space of the third function in one phase modulation area of the two or more phase modulation areas, replaces the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space, and converts the third function to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the first phase distribution design device, the second processing unit and the third processing unit operate repeatedly while replacing the second function of the second processing unit with the fourth function, and then the phase distribution in the real space of the fourth function finally subjected to conversion by the third processing is set as the phase distribution of each of the two or more phase modulation areas.
A first phase distribution design program according to the present disclosure is a program for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The first phase distribution design program causes a computer to perform a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each of the two or more phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas is made the same as the phase distribution in the wave number space of the third function in one phase modulation area of the two or more phase modulation areas, the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space, and the third function is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the first phase distribution design program, after the first to third steps have been performed, the computer is caused to repeatedly perform the second step and the third step while replacing the second function of the second step with the fourth function. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each of the two or more phase modulation areas.
In the related art, when a phase distribution of a single phase modulation area is designed, the first step and the second step (or the operations of the first processing unit and the second processing) are performed, and then the amplitude distribution in the wave number space of the third function is replaced with the target amplitude distribution based on the predetermined target intensity distribution in the wave number space. Then, the third function subjected to the replacement is converted to the fourth function including the amplitude distribution in the real space and the phase distribution in the real space through the inverse Fourier transform. Thereafter, the second step and the third step (or the operations of the second processing unit and the third processing) are repeatedly performed while replacing the second function in the second step (the second processing unit) with the fourth function. When this design method is individually (independently) applied to the phase distributions of a plurality of phase modulation areas, the phases of a plurality of light images output from the plurality of phase modulation areas are not synchronized with each other.
Therefore, with the first phase distribution design method, the first phase distribution design device, and the first phase distribution design program, in the third step (the third processing unit), the phase distributions in the wave number space of the third function in the phase modulation areas are made the same as the phase distribution in the wave number space of the third function in one phase modulation area of the two or more phase modulation areas. Accordingly, the phases of the plurality of light images output from the plurality of phase modulation areas can be synchronized with each other. Accordingly, it is possible to cause a predetermined interference effect in a hologram which is formed by causing the plurality of light images to overlap one area.
With the first phase distribution design method, the first phase distribution design device, and the first phase distribution design program, the one phase modulation area may be fixed when the third step or the operation of the third processing unit is repeated. With simulation by the inventor, the phases of the plurality of light images can be accurately synchronized with each other particularly in this case.
A second phase distribution design method according to the present disclosure is a method of designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The second phase distribution design method includes a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each of the two or more phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, a first procedure of replacing the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas with a predetermined distribution which is the same in the two or more phase modulation areas or a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space are performed, and the third function subjected to the replacement is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In this method, after the first to third steps are performed, the second step and the third step are repeated while replacing the second function of the second step with the fourth function, and the first procedure and the second procedure are alternately performed in repetition of the third step at that time. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each of the two or more phase modulation areas.
A second phase distribution design device according to the present disclosure is a device for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The second phase distribution design device includes a first processing unit, a second processing unit, and a third processing unit. The first processing unit sets a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space for each of the two or more phase modulation areas and converts the first function to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. The second processing unit replaces the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the real space and converts the second function subjected to the replacement to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. The third processing unit performs a first procedure of replacing the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas with a predetermined distribution which is the same in the two or more phase modulation areas or a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space and converts the third function subjected to the replacement to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second phase distribution design device, the second processing unit and the third processing unit operate repeatedly while replacing the second function of the second processing unit with the fourth function. At that time, the third processing unit alternately performs the first procedure and the second procedure in repetition of the operation of the third processing unit. The phase distribution in the real space of the fourth function finally subjected to conversion by the third processing unit is set as the phase distribution of each of the two or more phase modulation areas.
A second phase distribution design program according to the present disclosure is a program for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. The second phase distribution design program causes a computer to perform a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each of the two or more phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, a first procedure of replacing the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas with a predetermined distribution which is the same in the two or more phase modulation areas or a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space is performed, and the third function subjected to the replacement is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the first phase distribution design program, after the first to third steps have been performed, the computer is caused to repeatedly perform the second step and the third step while replacing the second function of the second step with the fourth function. At that time, the first procedure and the second procedure are alternately performed in repetition of the third step. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each of the two or more phase modulation areas.
With the second phase distribution design method, the second phase distribution design device, and the second phase distribution design program, when the second step and the third step are repeated (or when the operations of the second processing unit and the third processing unit are repeated), the phase distributions in the wave number space of the third function in the phase modulation areas are replaced with a predetermined distribution which is the same in the two or more phase modulation areas in one of two times of the third step (or the operation of the third processing unit). Accordingly, the phases of a plurality of light images output from a plurality of phase modulation areas can be synchronized with each other. As a result, it is possible to cause a predetermined interference effect in a hologram which is formed by causing the plurality of light images to overlap one area.
With the second phase distribution design method, the second phase distribution design device, and the second phase distribution design program, the phase values of the plurality of points in the predetermined distribution may be the same. With simulation by the inventor, the phases of the plurality of light images can be accurately synchronized with each other particularly in this case. In this case, the phase values of the plurality of points in the predetermined distribution may be zero.
With the second phase distribution design method, the second phase distribution design device, and the second phase distribution design program, the predetermined distribution may be fixed in repetition of the third step. With simulation by the inventor, the phases of the plurality of light images can be accurately synchronized with each other particularly in this case.
With the first and second phase distribution design methods, the first and second phase distribution design devices, and the first and second phase distribution design programs, the initial value of the amplitude distribution in the wave number space may be a target amplitude distribution in the wave number space. In this case, it is possible to cause a light image to accurately approach a predetermined target intensity distribution by a smaller number of repetitions.
With the first and second phase distribution design methods, the first and second phase distribution design devices, and the first and second phase distribution design programs, the initial value of the phase distribution in the wave number space may have a random distribution.
Another phase distribution design method according to the present disclosure is a method of designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. This phase distribution design method includes a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each of the two or more phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, one or both of a first procedure of replacing the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas with a distribution which is the same in the two or more phase modulation areas and a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space are performed, and the third function subjected to the replacement is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In this method, after the first to third steps are performed, the second step and the third step are repeatedly performed while replacing the second function of the second step with the fourth function. At that time, when only one of the first procedure and the second procedure is performed in each third step, the first procedure and the second procedure are alternately performed in repetition of the third step at that time. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each of the two or more phase modulation areas.
Another phase distribution design device according to the present disclosure is a device for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. This phase distribution design device includes a first processing unit, a second processing unit, and a third processing unit. The first processing unit sets a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space for each of the two or more phase modulation areas and converts the first function to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. The second processing unit replaces the amplitude distribution in the real space of the second function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the real space and converts the second function subjected to the replacement to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. The third processing unit performs one or both of a first procedure of replacing the phase distribution in the wave number space of the third function in each of the two or more phase modulation areas with a distribution which is the same in the two or more phase modulation areas and a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space and converts the third function subjected to the replacement to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In this device, the second processing unit and the third processing unit operate repeatedly while replacing the second function of the second processing unit with the fourth function. At that time, when only one of the first procedure and the second procedure is performed, the third processing unit alternately performs the first procedure and the second procedure in repetition of the operation of the third processing unit. The phase distribution in the real space of the fourth function finally subjected to conversion by the third processing unit is set as the phase distribution of each of the two or more phase modulation areas.
Another phase distribution design program according to the present disclosure is a program for designing phase distributions of two or more phase modulation areas for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. This phase distribution design program causes a computer to perform a first step, a second step, and a third step. In the first step, a first function including an initial value of an amplitude distribution in a wave number space and an initial value of a phase distribution in the wave number space is set for each phase modulation areas, and the first function is converted to a second function including an amplitude distribution in a real space and a phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In the second step, the amplitude distribution in the real space of the second function in each phase modulation areas is replaced with a target amplitude distribution based on a predetermined target intensity distribution in the real space, and the second function subjected to the replacement is converted to a third function including the amplitude distribution in the wave number space and the phase distribution in the wave number space through a Fourier transform for each phase modulation area. In the third step, one or both of a first procedure of replacing the phase distribution in the wave number space of the third function in each phase modulation areas with a distribution which is the same in the two or more phase modulation areas and a second procedure of replacing the amplitude distribution in the wave number space of the third function in each of the two or more phase modulation areas with a target amplitude distribution based on a predetermined target intensity distribution in the wave number space are performed, and the third function subjected to the replacement is converted to a fourth function including the amplitude distribution in the real space and the phase distribution in the real space through an inverse Fourier transform for each phase modulation area. In this program, after the first step to the third step described above, the computer is caused to repeatedly perform the second step and the third step while replacing the second function of the second step with the fourth function. At that time, when only one of the first procedure and the second procedure is performed in each third step, the first procedure and the second procedure are alternately performed in repetition of the third step. Then, the phase distribution in the real space of the fourth function finally subjected to conversion in the third step is set as the phase distribution of each phase modulation area.
A recording medium according to the present disclosure is a computer-readable recording medium in which one of the aforementioned phase distribution design programs is recorded.
According to the present disclosure, it is possible to provide a phase distribution design method, a phase distribution design device, a phase distribution design program, and a recording medium that can synchronize phases of a plurality of light images with each other.
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Specific examples of a phase distribution design method, a phase distribution design device, a phase distribution design program, and a recording medium according to the present disclosure will be described below with reference to the accompanying drawings. The present disclosure is not limited to such examples and is intended to be represented by the appended claims and to include all modifications with meanings and scopes equivalent to the claims. In the following description, the same elements in description with reference to the drawings will be referred to by the same reference signs, and description thereof will be omitted.
The semiconductor light-emitting device 1 includes semiconductor substrate 10. The semiconductor substrate 10 includes a main surface 10a and a rear surface 10b. A normal direction of the main surface 10a and the rear surface 10b and the thickness direction of the semiconductor substrate 10 are along the Z direction. The semiconductor substrate 10 is formed of, for example, a compound semiconductor such as a GaAs-based semiconductor, an InP-based semiconductor, or a nitride-based semiconductor.
The semiconductor light-emitting device 1 further includes a semiconductor stacked layer 20. The semiconductor stacked layer 20 is provided on the main surface 10a of the semiconductor substrate 10. A stacking direction of the semiconductor stacked layer 20 is along the Z direction. The semiconductor stacked layer 20 has a stacked structure in which a clad layer 11, an active layer 12, a clad layer 13, a contact layer 14, and a phase modulation layer 15 are included between a first face 20a and a second face 20b. The second face 20b of the semiconductor stacked layer 20 is opposite to the main surface 10a of the semiconductor substrate 10. In the illustrated example, the clad layer 11 is provided on the main surface 10a of the semiconductor substrate 10, the active layer 12 is provided on the clad layer 11, the phase modulation layer 15 is provided on the active layer 12, the clad layer 13 is provided on the phase modulation layer 15, and the contact layer 14 is provided on the clad layer 13. That is, the clad layers 11 and 13 have the active layer 12 and the phase modulation layer 15 interposed therebetween. In the illustrated example, the phase modulation layer 15 is provided between the active layer 12 and the clad layer 13, but the phase modulation layer 15 may be provided between the clad layer 11 and the active layer 12. A light guide layer may be provided in one or both of a layer between the active layer 12 and the clad layer 13 and a layer between the active layer 12 and the clad layer 11 according to necessity. The light guide layer may include a carrier barrier layer for efficiently confining carriers in the active layer 12.
The clad layer 11, the active layer 12, the clad layer 13, and the contact layer 14 are formed of, for example, a compound semiconductor such as a GaAs-based semiconductor, an InP-based semiconductor, or a nitride-based semiconductor. The active layer 12 has, for example, a multi-quantum well structure. An energy bandgap of the clad layer 11 and an energy bandgap of the clad layer 13 are larger than an energy bandgap of the active layer 12. The thickness directions of the clad layer 11, the active layer 12, the clad layer 13, and the contact layer 14 coincide with the Z-axis direction.
The phase modulation layer 15 is optically coupled to the active layer 12. The thickness direction of the phase modulation layer 15 coincides with the Z-axis direction.
A planar shape of each of the plurality of phase modulation areas 151 is, for example, square or rectangular. The plurality of phase modulation areas 151 are two-dimensionally arranged on a virtual plane P perpendicular to the thickness direction of the phase modulation layer 15 (that is, parallel to the XY plane) and are optically coupled to each other. In the illustrated example, the plurality of phase modulation areas 151 are arranged in the X direction and the Y direction. In the illustrated example, the plurality of phase modulation areas 151 are two-dimensionally arranged, but the plurality of phase modulation areas 151 may be one-dimensionally arranged. In the illustrated example, the plurality of phase modulation areas 151 are arranged with intervals therebetween. The connection area 152 includes a part 152b provided between the neighboring phase modulation areas 151 and a frame-shaped part 152c surrounding the plurality of phase modulation areas 151 together.
As illustrated in
The plurality of different-refractive-index regions 15b are distributed in a two-dimensional shape on a virtual plane P. In each phase modulation area 151, the plurality of different-refractive-index regions 15b include a substantially periodical structure of a lattice shape. When an equivalent refractive index of a mode is n and a lattice spacing is a, a wavelength λ0 selected by each phase modulation area 151 is expressed by λ0=(√2)a×n, for example, in a case of M1-point oscillation. This wavelength λ0 is included in an emission wavelength range of the active layer 12. Each phase modulation area 151 selects a band end wavelength near the wavelength λ0 out of emission wavelengths of the active layer 12 and outputs the selected band end wavelength to the outside. Light incident on each phase modulation area 151 from the active layer 12 forms a predetermined mode based on the arrangement of the different-refractive-index regions 15b in each phase modulation area 151 and is output as laser light L from the rear surface 10b of the semiconductor substrate 10 to the outside of the semiconductor light-emitting device 1.
The tilt angle β is the same for all the straight lines D in the phase modulation area 151. The tilt angle β is the same for all of the plurality of phase modulation areas 151. The tilt angle β satisfies 0°<β<90° and is, for example, β−45°. Alternatively, the tilt angle β satisfies 180°<β<270° and is, for example, β=225°. When the tilt angle β satisfies 0°<β<90° or 180°<β<270°, the straight line D extends from the first quadrant to the third quadrant of a coordinate plane which is defined by the X axis and the Y axis. The tilt angle β satisfies 90°<β<180° and is, for example, β=135°. Alternatively, the tilt angle β satisfies 270°<β<360° and is, for example, β=315°. When the tilt angle β satisfies 90°<β<180° or 270°<β<360°, the straight line D extends from the second quadrant to the fourth quadrant of the coordinate plane which is defined by the X axis and the Y axis. In this way, the tilt angle β is an angle other than 0°, 90°, 180°, and 270°.
Here, it is assumed that a distance between the lattice point O and the centroid G is r(x, y). Here, x is a position of an x-th lattice point on the X axis, and y is a position of a y-th lattice point on the Y axis. When the distance r(x, y) has a positive value, the centroid G is located in the first quadrant or the second quadrant. When the distance r(x, y) has a negative value, the centroid G is located in the third quadrant or the fourth quadrant. When the distance r(x, y) is 0, the lattice point O and the centroid G match each other. The tilt angle is preferably 45°, 135°, 225°, or 275°. With these tilt angles, only two out of four wave number vectors forming a standing wave at M points, for example, in-plane wave number vectors (+π/a, +π/a), are modulated in phase, and the other two wave number vectors are not modulated in phase. Accordingly, it is possible to form a stable standing wave.
The distance r(x, y) is individually set for each different-refractive-index region 15b according to a phase distribution ϕ(x, y) corresponding to a light image to be output from each phase modulation area 151. That is, when a phase ϕ(x, y) at certain coordinates (x, y) is ϕ0, the distance r(x, y) is set to 0. When the phase ϕ(x, y) is π+ϕ0, the distance r(x, y) is set to a maximum value R0. When the phase ϕ(x, y) is −π+ϕ0, the distance r(x, y) is set to a minimum value −R0. For an intermediate phase ϕ(x, y) therebetween, the distance r(x, y) is set to satisfy r(x, y)={ϕ(x, y)−ϕ0}×R0/π. When a lattice spacing of a virtual tetragonal lattice is defined as a, the maximum value R0 of the distance r(x, y) falls within, for example, the range of Formula (1).
The initial phase ϕ0 can be arbitrarily set. The distribution of the phase ϕ(x, y) and the distribution of the distance r(x, y) have specific values for each position which is determined by the values of x and y, but cannot be said to be expressed by a specific function.
By determining the distribution of the distance r(x, y) of the different-refractive-index regions 15b of the plurality of phase modulation areas 151, it is possible to output a desired light image from each of the plurality of phase modulation areas 151. The phase modulation areas 151 are configured to satisfy the following conditions.
As a first precondition, a virtual tetragonal lattice including M1×N1 unit constituent areas R having a square shape is set on the XY plane. M1 and N1 are integers equal to or greater than 1.
As illustrated in
Light emitted from each phase modulation area 151 is a set of bright spots in a direction which is defined by the angles θtilt and θrot. In this case, the angles θtilt and θrot are converted to coordinate values kx and ky. The coordinate value kx is a standardized wave number defined by Formula (5) and is a coordinate value on a Kx axis corresponding to the X axis. The coordinate value ky is a standardized wave number defined by Formula (6) and is a coordinate value on a Ky axis corresponding to the Y axis and perpendicular to the Kx axis. The standardized wave number is a wave number which is standardized with a wave number 2π/a corresponding to the lattice spacing of the virtual tetragonal lattice as 1.0. In this case, in the wave number space defined by the Kx axis and the Ky axis, a specific wave number range including a beam pattern corresponding to a light image includes M2×N2 image areas FR with a square shape. M2 and N2 are integers equal to or greater than 1. The integer M2 does not need to be equal to the integer M1. The integer N2 does not need to be equal to the integer N1. Formulas (5) and (6) are disclosed in, for example, Non Patent Literature 1.
In the wave number space, an image area FR(kx, ky) is identified by a coordinate component kx in the Kx-axis direction and a coordinate component ky in the Ky-axis direction. The coordinate component kx is an integer equal to or greater than 0 and equal to or less than M2−1. The coordinate component ky is an integer equal to or greater than 0 and equal to or less than N2−1. A unit constituent area R(x, y) on the XY plane is identified by a coordinate component x in the X-axis direction and a coordinate component y in the Y-axis direction. The coordinate component x is an integer equal to or greater than 0 and equal to or less than M1−1. The coordinate component y is an integer equal to or greater than 0 and equal to or less than N1−1. As a third precondition, a complex amplitude CA(x, y) which is obtained by performing a two-dimensional inverse discrete Fourier transform on the image area FR(kx, ky) to the unit constituent area R(x, y) is represented by Formula (7) with j as an imaginary unit. The complex amplitude CA(x, y) is defined by Formula (8), where an amplitude term is defined as A(x, y) and a phase term is defined as ϕ(x, y). As a fourth precondition, the unit constituent area R(x, y) is defined by an s axis and a t axis. The s axis and the taxis are parallel to the X axis and the Y axis, respectively, and are orthogonal at a lattice point O(x, y) which is the center of the unit constituent area R(x, y). The complex amplitudes CA(x, y) represented by Formulas (7) and (8) correspond to A1eiϕ1 and A2eiϕ2 in
In the first to fourth preconditions, the phase modulation areas 151 are configured to satisfy the following conditions. That is, the corresponding different-refractive-index region 15b is disposed in the unit constituent area R(x, y) such that a distance r(x, y) from the lattice point O(x, y) to the centroid G of the corresponding different-refractive-index region 15b satisfies the following relationship.
When it is intended to acquire a desired light image, the light image can be subjected to an inverse Fourier transform, and a distribution of the distance r(x, y) corresponding to the phase ϕ(x, y) of a complex amplitude thereof can be applied to the plurality of different-refractive-index regions 15b. The phase ϕ(x, y) and the distance r(x, y) may be proportional to each other.
Description will be continued with reference back to
The plurality of electrode parts 161 are individually electrically connected to a drive circuit 31 via a plurality of lines 33. The electrode 17 is electrically connected to the drive circuit 31 via a line 34. The drive circuit 31 is electrically connected to a power supply circuit 32 via a line 35. The drive circuit 31 is supplied with electric power from the power supply circuit 32 and supplies driving currents to the plurality of electrode parts 161 and the electrode 17. The drive circuit 31 can change the magnitude of the driving current for each electrode part 161. The magnitude of the driving current to the electrode parts 161 is independently set for each electrode part 161.
Description will be continued with reference back to
On the rear surface 10b of the semiconductor substrate 10, an area that includes the insides of the openings 17a other than the area in which the electrode 17 is provided is covered with an antireflection film 19. The antireflection film 19 provided in an area other than the openings 17a may be removed. The antireflection film 19 is formed of, for example, a single-layered film or a multi-layered film such as a silicon nitride (for example, SiN) or a silicon oxide (for example, SiO2). As the multi-layered film of a dielectric, for example, a film in which two or more types of dielectric layers selected from a dielectric layer group consisting of titanium oxide (TiO2), silicon dioxide (SiO2), silicon monoxide (SiO), niobium oxide (Nb2O5), tantalum pentoxide (Ta2O5), magnesium fluoride (MgF2), titanium oxide (TiO2), aluminum oxide (Al2O3), cerium oxide (CeO2), indium oxide (In2O3), and zirconium oxide (ZrO2) can be used. The multi-layered film of a dielectric is formed, for example, by stacking a plurality of films of which an optical thicknesses with respect to light of a wavelength λ is λ/4.
In this embodiment, the electrode 16 facing the first face 20a includes a plurality of electrode parts 161, but the electrode 17 facing the second face 20b may include a plurality of electrode parts instead of the configuration or in addition to the configuration. In this case, similarly to the plurality of electrode parts 161, the plurality of electrode parts of the electrode 17 are arranged with gaps therebetween and electrically isolated from each other. The electrode parts of the electrode 17 correspond to the phase modulation areas 151 in a one-to-one manner. When seen in the thickness direction of the semiconductor stacked layer 20, the electrode parts of the electrode 17 overlap the corresponding phase modulation areas 151. The planar shape of each electrode part of the electrode 17 is, for example, a rectangular frame shape including an opening 17a. The plurality of electrode parts of the electrode 17 are individually electrically connected to the drive circuit 31 via a plurality of lines. The drive circuit 31 freely changes the magnitude of a driving current for each electrode part of the electrode 17.
In the semiconductor light-emitting device 1, when driving current supplied between each electrode part 161 and the electrode 17, recombination of electrons and holes is caused in a part of the active layer 12 located just below the corresponding electrode part 161, and light is output from the corresponding part of the active layer 12. At this time, electrons and holes contributing to emission of light and light output from the active layer 12 are efficiently confined between the clad layer 11 and the clad layer 13.
Light output from the corresponding part of the active layer 12 is input into the phase modulation area 151 facing the part. Then, the light oscillates along the virtual plane P in the phase modulation area 151 and forms a predetermined mode based on the arrangement of the plurality of different-refractive-index regions 15b. A part of laser light L output from the corresponding phase modulation area 151 is directly output to the outside of the semiconductor light-emitting device 1 from the rear surface 10b via the opening 17a. The remaining part of the laser light L output from the phase modulation area 151 is reflected by the electrode 16 and is then output to the outside of the semiconductor light-emitting device 1 from the rear surface 10b via the opening 17a. At this time, signal light included in the laser light L exits in a direction crossing both the first face 20a and the second face 20b of the semiconductor stacked layer 20. In other words, signal light included in the laser light L exits in an arbitrary direction including a direction perpendicular to the rear surface 10b and a direction oblique to the direction perpendicular to the rear surface 10b. Exit light from the semiconductor light-emitting device 1 includes signal light. The signal light is mainly one or both of 1st-order diffracted light or −1 st-order diffracted light of the laser light. In the following description, 1st-order diffracted light is referred to as 1st-order light, and −1st-order diffracted light is referred to as −1st-order light.
Laser light L output from the plurality of phase modulation areas 151 is applied as light images based on the arrangement of the plurality of different-refractive-index regions 15b to a common irradiation area (a far field) which is located in a direction crossing both the first face 20a and the second face 20b of the semiconductor stacked layer 20. A plurality of different-refractive-index regions 15b included in at least two phase modulation areas 151 out of the plurality of phase modulation areas 151 have arrangements which are different for the phase modulation areas 151. Accordingly, a plurality of light images output from the plurality of phase modulation areas 151 interfere with each other to form a final light image.
In order to acquire a final light image by causing a plurality of light images output from the plurality of phase modulation areas 151 to interfere with each other, these light images are synchronized in phase with each other. In order to synchronize phases the light images with each other, in this embodiment, the connection area 152 is provided between neighboring phase modulation areas 151. Since the resonance modes in the neighboring phase modulation areas 151 are shared via the connection area 152, the phases of laser light L oscillating in the phase modulation areas 151 can be synchronized between the plurality of phase modulation areas 151. The connection area 152 may be removed to make the neighboring phase modulation areas 151 adjacent to each other. In this case, the phases of laser light L oscillating in the phase modulation areas 151 can be synchronized with each other between the plurality of phase modulation areas 151. In order to synchronize phases a plurality of light images with each other, phase synchronization needs to be considered when the phase distribution ϕ(x, y) of the phase modulation areas 151 is designed. Design of the phase distribution ϕ(x, y) in consideration of phase synchronization will be described later.
In order to acquire a desired light image by causing the light images output from the plurality of phase modulation areas 151 to interfere with each other, it is preferable that polarization directions of the light images be aligned. In this embodiment, the centroids G of the different-refractive-index regions 15b are disposed on the straight line D set for the corresponding lattice points O. The tilt angles β of the straight lines D are the same at all the lattice points O in the phase modulation area 151 and are the same in the plurality of phase modulation areas 151.
On the other hand,
As described above, the semiconductor light-emitting device 1 according to this embodiment irradiates a common irradiation area with a plurality of light images output from the plurality of phase modulation areas 151. A final one light image (a hologram) is formed by causing the plurality of light images to overlap and interfere with each other.
As well as the discrete cosine transform and the discrete wavelet transform, the base images may be learned, for example, from a group of a plurality of light images to be displayed in a far field through machine learning (such as main component analysis or dictionary learning). In the example illustrated in
A phase distribution design method according to this embodiment in consideration of phase synchronization of light images output from a plurality of phase modulation areas 151 will be described below in detail. In the following description, a plurality of different-refractive-index regions 15b may be referred to as a “plurality of points.” That is, the method described below is a method of designing a phase distribution ϕ(x, y) of two or more phase modulation areas 151 for individually modulating phases of light at a plurality of points which are distributed in a two-dimensional shape. In the following description, a “real space” refers to a space of the phase modulation areas 151, and a “wave number space” refers to a space of light images (also referred to as beam patterns) in an irradiation area.
In the first step, for each phase modulation area 151, the first function 203 is converted to a second function 213 which is a complex amplitude distribution function including an amplitude distribution 211 in the real space and a phase distribution 212 in the real space, for example, using an inverse Fourier transform such as an inverse fast Fourier transform (IFFT) (an arrow B2 in the drawing). When the amplitude distribution 211 in the real space is A(x, y) and the phase distribution 212 in the real space is ϕ(x, y), the second function 213 is expressed as A(x, y)·eiϕ(kx,ky).
Then, in a second step, the amplitude distribution 211 of the second function 213 in each phase modulation area 151 is replaced with a target amplitude distribution 214 based on a predetermined target intensity distribution in the real space (arrows B3 and B4 in the drawing). For example, when the predetermined target intensity distribution is A02(x, y), the target amplitude distribution is given as A0(x, y). For example, the predetermined target intensity distribution A02(x, y) is constant regardless of x and y, and the target amplitude distribution A0(x, y) is also constant regardless of x and y. In this case, the phase distribution 212 of the second function 213 in each phase modulation area 151 is held without any change (an arrow B5 in the drawing). Then, for each phase modulation area 151, the second function 213 subjected to the replacement is converted to a third function 223 which is a complex amplitude distribution function including an amplitude distribution 221 in the wave number space and a phase distribution 222 in the wave number space, for example, using a Fourier transform such as a fast Fourier transform (FFT) (an arrow B6 in the drawing). When the amplitude distribution 221 in the wave number space is F(kx, ky) and the phase distribution 222 in the wave number space is θ(kx, ky), the third function 223 is expressed as F(kx, ky)·eiθ(kx,ky).
Then, in a third step, the phase distributions 222 of the third function 223 in the phase modulation areas 151 are made the same as the phase distribution 222 of the third function 223 in one phase modulation area 151 out of the plurality of phase modulation areas 151 (an arrow B7 in the drawing). In this case, the one phase modulation area 151 serving as a reference for making the phase distributions 222 the same is arbitrarily determined. In the third step, the amplitude distribution 221 of the third function 223 in each phase modulation area 151 is replaced with the target amplitude distribution 204 (arrows B8 and B9 in the drawing). Then, for each phase modulation area 151, the third function 223 subjected to the replacement is converted to a fourth function 233 which is a complex amplitude distribution function including an amplitude distribution 231 in the real space and a phase distribution 232 of the real space using an inverse Fourier transform such as an IFFT (an arrow B2 in the drawing). When the amplitude distribution 231 in the real space is A(x, y) and the phase distribution 232 in the real space is ϕ(x, y), the fourth function 233 is expressed as A(x, y)·eiϕ(kx,ky).
Thereafter, the second step and the third step are repeated while replacing the second function 213 in the second step with the fourth function 233. Whenever the third step is repeated, the position of one phase modulation area 151 serving as a reference for making the phase distribution 222 the same may be fixed without being changed. Then, the phase distribution 232 of the fourth function 233 finally subjected to the conversion in the third step is set as the phase distribution (x, y) of the phase modulation areas 151 (an arrow B10 in the drawing).
For example, as illustrated in
First, in the first step, initial values are set (an arrow B11 in the drawing). That is, a first function F1(kx, ky)·eiθ1(kx,ky) (hereinafter abbreviated to F1·eiθ1) which is a complex amplitude distribution function including an initial value of an amplitude distribution F1(kx, ky) in the wave number space and an initial value of a phase distribution θ1(kx, ky) in the wave number space is set for the phase distribution pattern A. A first function F2(kx, ky)·eiθ2(kx,ky) (hereinafter abbreviated to F2·eiθ2) which is a complex amplitude distribution function including an initial value of an amplitude distribution F2(kx, ky) in the wave number space and an initial value of a phase distribution θ2(kx, ky) in the wave number space is set for the phase distribution pattern B. Then, the first function F1·eiθ1 of the phase distribution pattern A is converted to a second function A1(x, y)·eiϕ1(x,y) (hereinafter abbreviated to A1eiϕ1) which is a complex amplitude distribution function including an amplitude distribution A1(x, y) in the real space and a phase distribution ϕ1(x, y) in the real space through an inverse Fourier transform such as an IFFT (an arrow B12 in the drawing). Similarly, the first function F2(x, y)·eiθ2(x,y) of the phase distribution pattern B is converted to a second function A2(x, y)·eiϕ2(x,y) (hereinafter abbreviated to A2·eiϕ2) which is a complex amplitude distribution function including an amplitude distribution A2(x, y) in the real space and a phase distribution ϕ2(x, y) in the real space through an inverse Fourier transform such as an IFFT (an arrow B13 in the drawing).
Then, in the second step, the amplitude distribution A1 of the second function A1·eiϕ1 is replaced with a target amplitude distribution A1′ based on a predetermined target intensity distribution in the real space. Similarly, the amplitude distribution A2 of the second function A2·eiϕ2 is replaced with a target amplitude distribution A2′ based on a predetermined target intensity distribution in the real space (an arrow B14 in the drawing). At this time, the phase distribution ϕ1 and the phase distribution ϕ2 are held without any change. Then, the second function A1′·eiϕ1 subjected to the replacement is converted to a third function F1·eiθ1 which is a complex amplitude distribution function including an amplitude distribution F1 in the wave number space and a phase distribution θ1 in the wave number space, for example, through a Fourier transform such as an FFT (an arrow B15 in the drawing). Similarly, the second function A2′·eiϕ2 subjected to the replacement is converted to a third function F2·eiθ2 which is a complex amplitude distribution function including an amplitude distribution F2 in the wave number space and a phase distribution θ2 in the wave number space, for example, through a Fourier transform such as an FFT (an arrow B16 in the drawing).
Then, in the third step, the phase distribution θ2 of the third function F2·eiθ2 is made the same as the phase distribution θ1 of the third function F1·eiθ1. The amplitude distribution F1 of the third function F1·eiθ1 and the amplitude distribution F2 of the third function F2·eiθ2 are replaced with the target amplitude distributions F1′ and F2′ (an arrow B17 in the drawing). Then, the third function F1′·eiθ1 is converted to a fourth function A1·eiϕ1 which is a complex amplitude distribution function including the amplitude distribution A1 in the real space and the phase distribution ϕ1 in the real space through inverse Fourier transform such as an IFFT (an arrow B18 in the drawing). Similarly, the third function F2′·eiθ1 is converted to a fourth function A2·ei ϕ2 which is a complex amplitude distribution function including the amplitude distribution A2 in the real space and the phase distribution ϕ2 in the real space through inverse Fourier transform such as an IFFT (an arrow B19 in the drawing).
Thereafter, the second step and the third step are repeated while replacing the second function A1·eiϕ1 and the second function A2·eiϕ2 in the second step with the fourth function A1·eiϕ1 and the fourth function A2·eiϕ2, respectively (an arrow B20 in the drawing). Then, the phase distribution ϕ1 of the fourth function A1·eiϕ1 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern A. The phase distribution ϕ2 of the fourth function A2·eiϕ2 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern B.
As another example, as illustrated in
First, in the first step, initial values are set (an arrow B41 in the drawing). That is, first functions F1,1(kx, ky)·eiθ1,1(kx, ky) to Fm,n(kx, ky)·eiθm,n(kx,ky) (hereinafter abbreviated to F1,1·eiθ1,1 to Fm,n·eiθm,n) which are complex amplitude distribution functions including initial values of amplitude distributions F1,1(kx, ky) to Fm,n(kx, ky) in the wave number space and initial values of phase distributions θ1,1(kx, ky) to θm,n(kx, ky) in the wave number space are set for the m×n phase modulation areas 151. For each phase modulation area 151, the first functions F1,1·eiθ1,1 to Fm,n·eiθm,n are converted to second functions A1,1(x, y)·eiϕ1,1(x,y) to Am,n(x, y)·eiϕm,n(x,y) (hereinafter abbreviated to A1,1·eiϕ1,1 to Am,n·eiϕm,n) which are complex amplitude distribution functions including amplitude distributions A1,1(x, y) to Am,n(x, y) in the real space and phase distributions ϕ1,1(x, y) to ϕm,n(x, y) in the real space through an inverse Fourier transform such as an IFFT (an arrow B42 in the drawing).
Then, in the second step, for each phase modulation area 151, the amplitude distributions A1,1 to Am,n of the second functions A1,1·eiϕ1,1 to Am,n·eiϕm,n are replaced with target amplitude distributions A′1,1 to A′m,n based on a predetermined target intensity distribution in the real space (an arrow B43 in the drawing). At this time, the phase distributions ϕ1,1 to ϕm,n are held without any change. Then, for each phase modulation area 151, the second functions A′1,1·eiϕ1,1 to A′m,n·eiϕm,n subjected to the replacement are converted to third functions F1,1·eiθ1,1 to Fm,n·eiθm,n which are complex amplitude distribution functions including amplitude distributions F1,1 to Fm,n in the wave number space and phase distributions θ1,1 to θm,n in the wave number space, for example, through a Fourier transform such as an FFT (an arrow B44 in the drawing).
Then, in the third step, all the phase distributions θ1,1 to θm,n of the third functions F1,1·eiθ1,1 to Fm,n·eiθm,n are made the same as the phase distribution θ1,1 of the third function F1,1·eiθ1,1. The amplitude distributions F1,1 to Fm,n of the third functions F1,1·eiθ1,1 to Fm,n·eiθm,n are replaced with target amplitude distributions F′1,1 to F′m,n (an arrow B45 in the drawing). Then, the third functions F′1,1·eiθ1,1 to F′m,n·eiθ1,1 are converted to fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n which are complex amplitude distribution functions including the amplitude distributions A1,1 to Am,n in the real space and the phase distributions ϕ1,1 to ϕm,n in the real space through an inverse Fourier transform such as an IFFT (an arrow B46 in the drawing).
Thereafter, the second step and the third step are repeated while replacing the second functions A1,1·eiϕ1,1 to Am,n·eiϕm,n in the second step with the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n (an arrow B47 in the drawing). Then, the phase distributions ϕ1,1 to ϕm,n of the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n finally subjected to the conversion in the third step are set as the phase distributions ϕ(x, y) of the phase modulation areas 151.
A configuration of a phase distribution design device for performing the phase distribution design method will be described below. Part (a) of
Part (b) of
The first processing unit 310 performs the first step of the first design method. That is, the first processing unit 310 sets the first function 203 including the initial value 201 of the amplitude distribution in the wave number space and the initial value 202 of the phase distribution in the wave number space for each phase modulation area 151. Thereafter, the first processing unit 310 converts the first function 203 to the second function 213 including the amplitude distribution 211 in the real space and the phase distribution 212 in the real space through an inverse Fourier transform for each phase modulation area 151.
The second processing unit 320 performs the second step of the first design method. That is, the second processing unit 320 replaces the amplitude distribution 211 of the second function 213 in each phase modulation area 151 to the target amplitude distribution 214 based on the predetermined target intensity distribution in the real space. At this time, the second processing unit 320 holds the phase distribution 212 of the second function 213 in each phase modulation area 151 without any change. Thereafter, for each phase modulation area 151, the second processing unit 320 converts the second function 213 subjected to the replacement to the third function 223 which is a complex amplitude distribution function including the amplitude distribution 221 in the wave number space and the phase distribution 222 in the wave number space through a Fourier transform.
The third processing unit 330 performs the third step of the first design method. That is, the third processing unit 330 makes the phase distribution 222 of the third function 223 in each phase modulation area 151 the same as the phase distribution 222 of the third function 223 in one phase modulation area 151 out of the plurality of phase modulation areas 151. In addition, the third processing unit 330 replaces the amplitude distribution 221 of the third function 223 in each phase modulation area 151 to the target amplitude distribution 204. Thereafter, the third processing unit 330 converts the third function 223 subjected to the replacement to the fourth function 233 which is a complex amplitude distribution function including the amplitude distribution 231 in the real space and the phase distribution 232 in the real space through an inverse Fourier transform for each phase modulation area 151.
Thereafter, the second processing unit 320 and the third processing unit 330 repeatedly perform the operations while replacing the second function 213 of the second processing unit 320 with the fourth function 233. Then, the phase distribution 232 of the fourth function 233 finally subjected to the conversion with the operation of the third processing unit 330 is set as the phase distribution ϕ(x, y) of each phase modulation area 151.
The processor 301 of the computer can realize the functions using a phase distribution design program. Accordingly, the phase distribution design program causes the processor 301 of the computer to serve as the first processing unit 310, the second processing unit 320, and the third processing unit 330 of the phase distribution design device 300. The phase distribution design program is stored in the main storage device (the ROM 302) or the auxiliary storage device 307 in the computer. Alternatively, the phase distribution design program may be acquired via a communication line and then stored in the main storage device or the auxiliary storage device 307, or the phase distribution design program stored in a computer-readable recording medium 308 may be read and stored in the main storage device or the auxiliary storage device 307. A flexible disk, a CD-ROM, a DVD-ROM, a BD-ROM, a semiconductor memory, a cloud server, or the like can be used as the recording medium 308.
In the third step of the first time, the phase distribution 222 of the third function 223 in each phase modulation area 151 is replaced with a predetermined phase distribution which is the same in the plurality of phase modulation areas 151 (a first procedure, an arrow B21 in the drawing). The phase values of a plurality of points (kx, ky) in the predetermined phase distribution may be the same. In this case, the phase values of the plurality of points (kx, ky) in the predetermined phase distribution may be zero (0 rad). At this time, the amplitude distribution 221 is held without any change (an arrow B22 in the drawing). Then, the third function 223 is converted to the fourth function 233 through an inverse Fourier transform such as an IFFT (an arrow B2 in the drawing).
The second function 213 is replaced with the fourth function 233 and the second step is performed again. Thereafter, in the third step (of the second time), the amplitude distribution 221 of the third function 223 is replaced with the target amplitude distribution 204 (a second procedure, arrows B23 and B24 in the drawings). At this time, the phase distribution 222 is held without any change (an arrow B25 in the drawing). Then, the third function 223 subjected to the replacement is converted to the fourth function 233 through an inverse Fourier transform such as an IFFT (an arrow B2 in the drawing).
Thereafter, the second step and the third step are repeatedly performed while replacing the second function 213 of the second step with the fourth function 233. At that time, in repetition of the third step, replacement of the phase distribution 222 with the predetermined phase distribution (the first procedure) and replacement of the amplitude distribution 221 with the target amplitude distribution 204 (the second procedure) are alternately performed. In the first procedure in which the third steps are repeated, the predetermined phase distribution may be fixed without being changed. The phase distribution 232 of the fourth function 233 finally subjected to the replacement in the third step is set as the phase distribution ϕ(x, y) of each phase modulation area 151 (an arrow B10 in the drawing).
For example, as illustrated in
In the third step of the first time, the phase distribution θ1 of the third function F1·eiθ1 and the phase distribution θ2 of the third function F2·eiθ2 are replaced with a predetermined phase distribution θ′ common to the phase distribution pattern A and the phase distribution pattern B (an arrow B31 in the drawing). At that time, the amplitude distribution F1 and the amplitude distribution F2 are held without any change. Then, the third function F1·eiθ′ and the third function F2·eiθ′ are converted to the fourth function A1·eiϕ1 and the fourth function A2·eiϕ2, respectively, through an inverse Fourier transform such as an IFFT (arrows B32 and B33 in the drawing).
The second step is performed again while replacing the second function A1·eiϕ1 and the second function A2·eiϕ2 with the fourth function A1·eiϕ1 and the fourth function A2·ei ϕ2, respectively (arrows B34 to B36 in the drawing). Thereafter, in the third step (of the second time), the amplitude distribution F1 of the third function F1·eiθ1 and the amplitude distribution F2 of the third function F2·eiθ2 are replaced with the target amplitude distributions F1′ and F2′, respectively (an arrow B37 in the drawing). Then, the third function F1′·eiθ1 and the third function F2′·eiθ2 are converted to the fourth function A1·eiϕ1 and the fourth function A2·eiϕ2, respectively, through an inverse Fourier transform such as an IFFT (arrows B38 and B39 in the drawing).
Thereafter, the second step and the third step are repeated while replacing the second function A1·eiϕ1 and the second function A2·eiϕ2 in the second step with the fourth function A1·eiϕ1 and the fourth function A2·ei ϕ2, respectively (an arrow B20 in the drawing). At that time, in repetition of the third step, replacement of the phase distributions θ1 and θ2 (the first procedure, an arrow B31 in the drawing) and replacement of the amplitude distributions F1 and F2 (the second procedure, an arrow B37 in the drawing) are alternately performed. Then, the phase distribution ϕ1 of the fourth function A1·eiϕ1 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern A. The phase distribution ϕ2 of the fourth function A2·eiϕ2 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern B.
As another example, as illustrated in
In the third step of the first time, all the phase distributions θ1,1 to θm,n of the third functions F1,1·eiθ1,1 to Fm,n·eiθm,n are replaced with a predetermined common phase distribution θ′ (the first procedure, an arrow B51 in the drawing). At this time, amplitude distributions F1,1 to Fm,n are held without any change. Then, the third functions F1,1·eiθ′ to Fm,n·eiθ′ are converted to the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n, respectively, through an inverse Fourier transform such as an IFFT (an arrow B52 in the drawing).
The second step is performed again after replacing the second functions A1,1·eiϕ1,1 to Am,n·eiϕm,n with the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n, respectively (arrows B53 and B54 in the drawing). Thereafter, in the third step (of the second time), the amplitude distributions F1,1 to Fm,n of the third functions F1,1·eiθ1,1 to Fm,n·eiθm,n are replaced with the target amplitude distributions F′1,1 to F′m,n, respectively (an arrow B55 in the drawing). Then, the third functions F′1,1·eiθ1,1 to ′Fm,n·eiθm,n are converted to the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n, respectively, through an inverse Fourier transform such as an IFFT (a group of arrows B56 in the drawing).
Thereafter, the second step and the third step are repeated while replacing the second functions A1,1·eiϕ1,1 to Am,n·eiϕm,n in the second step with the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n, respectively (an arrow B47 in the drawing). At that time, in repetition of the third step, replacement of the phase distributions θ1,1 to θm,n (the first procedure, an arrow B51 in the drawing) and replacement of the amplitude distributions F1,1 to Fm,n (the second procedure, an arrow B55 in the drawing) are alternately performed. Then, the phase distributions θ1,1 to θm,n of the fourth functions A1,1·eiϕ1,1 to Am,n·eiϕm,n finally subjected to the conversion in the third step are set as the phase distributions ϕ(x, y) of the phase modulation areas 151.
A configuration of a phase distribution design device for performing the phase distribution design method will be described below.
The function of the first processing unit 410 is the same as the first processing unit 310 of the phase distribution design device 300. The function of the second processing unit 420 is the same as the second processing unit 320 of the phase distribution design device 300.
The third processing unit 430 performs the third step of the second design method. That is, the third processing unit 430 makes the phase distribution 222 of the third function 223 in each phase modulation area 151 the same as a predetermined phase distribution which is the same in the plurality of phase modulation areas 151 (the first procedure) or replaces the amplitude distribution 221 of the third function 223 with the target amplitude distribution 204 (the second procedure). Thereafter, the third processing unit 430 converts the third function 223 to the fourth function 233 through an inverse Fourier transform.
Thereafter, the second processing unit 420 and the third processing unit 430 repeatedly perform the operations while replacing the second function 213 of the second processing unit 420 with the fourth function 233. At that time, in repetition of the operation of the third processing unit 430, replacement of the phase distribution 222 with the predetermined phase distribution (the first procedure) and replacement of the amplitude distribution 221 with the target amplitude distribution 204 (the second procedure) are alternately performed. Then, the phase distribution 232 of the fourth function 233 finally subjected to the conversion with the operation of the third processing unit 430 is set as the phase distribution ϕ(x, y) of each phase modulation area 151.
The processor of the computer can realize the functions using a phase distribution design program. Accordingly, the phase distribution design program causes the processor of the computer to serve as the first processing unit 410, the second processing unit 420, and the third processing unit 430 of the phase distribution design device 400. The phase distribution design program is stored in the main storage device or the auxiliary storage device in the computer. Alternatively, the phase distribution design program may be acquired via a communication line and then stored in the main storage device or the auxiliary storage device, or the phase distribution design program stored in a computer-readable recording medium may be read and stored in the main storage device or the auxiliary storage device. A flexible disk, a CD-ROM, a DVD-ROM, a BD-ROM, a semiconductor memory, a cloud server, or the like can be used as the recording medium.
Advantageous effects obtained from the phase distribution design methods, the phase distribution design devices, the phase distribution design programs, and the recording media according to the embodiments described above will be described below.
Thereafter, the second step and the third step are repeated while replacing the second function A1·eiϕ1 and the second function A2·eiϕ2 in the second step with the fourth function A1·eiϕ1 and the fourth function A2·ei ϕ2, respectively (an arrow B20 in the drawing). Then, the phase distribution ϕ1 of the fourth function A1·eiϕ1 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern A. The phase distribution ϕ2 of the fourth function A2·ei ϕ2 finally subjected to the conversion in the third step is set as the phase distribution ϕ(x, y) with the phase distribution pattern B.
When the third design method is individually (independently) applied to the phase distributions of the plurality of phase modulation areas 151, the phases of the plurality of light images output from the plurality of phase modulation areas 151 are not synchronized with each other. Therefore, with the first design method, the phase distribution design device 300, and the program, in the third step and the third processing unit 330, the phase distributions 222 in the wave number space of the third function 223 in the phase modulation areas 151 are made the same as the phase distribution 222 in the wave number space of the third function 223 in one phase modulation area 151 out of two or more phase modulation areas 151 (an arrow B7 in
With the second design method, the phase distribution design device 400, and the program, in one of two times the third step or the operation of the third processing unit 430 is repeated, the phase distribution 222 in the wave number space of the third function 223 in each phase modulation area 151 is replaced with a predetermined phase distribution which is the same in two or more phase modulation areas 151. For example, in the example illustrated in
With the first and second design methods, the phase distribution design devices 300 and 400, and the programs thereof, the initial value 201 of the amplitude distribution in the wave number space may be the target amplitude distribution 204 as described above. In this case, it is possible to cause light images to accurately approach a predetermined target intensity distribution with a small number of repetitions.
With the first and second design methods, the phase distribution design devices 300 and 400, and the programs thereof, the initial value 202 of the phase distribution in the wave number space may be a random phase distribution 205 as described above.
With the first design method, the phase distribution design device 300, and the program thereof, as described above, the position of one phase modulation area 151 serving as a reference for making the phase distribution 222 the same may be fixed without being changed while the third step or the operation of the third processing unit 330 is repeated. According to the inventor's simulation, it is possible to accurately synchronize the phases of a plurality of light images particularly in this case.
With the second design method, the phase distribution design device 400, and the program thereof, as described above, the phase values at a plurality of points (kx, ky) in the predetermined phase distribution when the phase distribution 222 of the third function 223 is replaced with a predetermined phase distribution may be the same. According to the inventor's simulation, it is possible to accurately synchronize the phases of a plurality of light images particularly in this case. In this case, the phase values at the plurality of points (kx, ky) in the predetermined phase distribution may be zero (0 rad).
With the second design method, the phase distribution design device 400, and the program thereof, as described above, the predetermined phase distribution may be fixed without being changed while the third step or the operation of the third processing unit 430 is repeated. According to the inventor's simulation, it is possible to accurately synchronize the phases of a plurality of light images particularly in this case.
The inventor performed phase distribution design simulation by employing the phase distribution design method according to the embodiment for the phase modulation layer 15 including four phase modulation areas 151 illustrated in
Part (a) of
Part (a) of
The inventor performed other phase distribution design simulation by employing the first design method for the phase modulation layer 15 including four phase modulation areas 151 illustrated in
Part (a) of
Part (a) of
As illustrated in the drawings, with the phase distribution design method according to the embodiment, it is possible to realize a light intensity distribution with a sinusoidal wave shape of which the phase can change dynamically by dynamically changing the light intensity ratio of light images emitted from a plurality of phase modulation areas 151 having different phase distribution patterns.
The phase distribution design method, the phase distribution design device, the phase distribution design program, and the recording medium according to the present disclosure are not limited to the aforementioned embodiment and can be modified in various forms. For example, in the first design method according to the embodiment, the position of one phase modulation area 151 serving as a reference for making the phase distribution 222 the same is fixed without being changed while the third step is repeated, but the position of the one phase modulation area 151 may be changed while the third step is repeated. In the second design method according to the embodiment, the phase values of a plurality of points in a predetermined phase distribution are set to the same when the phase distribution 222 of the third function 223 is replaced with the predetermined phase distribution in the third step, but the phase values of at least two points may be different. When the phase values of a plurality of points are the same, the phase values are not limited to zero.
1 . . . Semiconductor light-emitting device, 10 . . . Semiconductor substrate, 10a . . . Main surface, 10b . . . Rear surface, 11 . . . Clad layer, 12 . . . Active layer, 13 . . . Clad layer, 14 . . . Contact layer, 15 . . . Phase modulation layer, 15a . . . Basic region, 15b . . . Different-refractive-index region, 15c . . . Cap region, 16 . . . Electrode (first electrode), 17 . . . Electrode (second electrode), 17a . . . Opening, 18 . . . Protection film, 19 . . . Antireflection film, 20 . . . Semiconductor stacked layer, 20a . . . First face, 20b . . . Second face, 31 . . . Drive circuit, 32 . . . Power supply circuit, 33 to 35 . . . Line, 151 . . . Phase modulation area, 152 . . . Connection area, 152a . . . Opening, 152b, 152c . . . Part, 161 . . . Electrode part, 201 . . . Initial value of amplitude distribution in wave number space, 202 . . . Initial value of phase distribution in wave number space, 203 . . . First function, 204 . . . Target amplitude distribution, 205 . . . Random phase distribution, 211 . . . Amplitude distribution in real space, 212 . . . Phase distribution in real space, 213 . . . Second function, 214 . . . Target amplitude distribution, 221 . . . Amplitude distribution in wave number space, 222 . . . Phase distribution in wave number space, 223 . . . Third function, 231 . . . Amplitude distribution in real space, 232 . . . Phase distribution in real space, 233 . . . Fourth function, 300, 400 . . . Phase distribution design device, 310, 410 . . . First processing unit, 320, 420 . . . Second processing unit, 330, 430 . . . Third processing unit, D. . . Straight line, G. . . Centroid, L. . . Laser light, LA. . . Light image, O. . . Lattice point, P. . . Virtual plane, R. . . Unit constituent area
| Number | Date | Country | Kind |
|---|---|---|---|
| 2022-036005 | Mar 2022 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2023/007118 | 2/27/2023 | WO |