Phosphor, method for preparing phosphor, optoelectronic component, and method for producing optoelectronic component

Abstract

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La3(1−x)Ga1−yGe5(1−z)O16: 3xA3+, yCr3+, 5zB4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Description

TECHNICAL FIELD

The present application relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component, in particular, it relates to a phosphor having a high radiant flux and having a wide emission spectral wavelength in a red visible light and near-infrared regions, a method for preparing the phosphor, an optoelectronic component provided with the phosphor, and a process for producing the optoelectronic component.

BACKGROUND

Visible light is a part of the electromagnetic spectrum that can be perceived by human eyes. Infrared light is an electromagnetic wave (light) having a longer wavelength than the visible light. Studies have shown that infrared light can “penetrate” into human skin and is absorbable by the epidermis, dermis and subcutaneous tissue. At the same time, some spectrums absorbable by human organs falls within a visible range of electromagnetic spectrum, however, the reflected spectrum is a broadband reflection spectrum, which is within ranges of near-infrared light and red visible light. For instance, in a human brain, protein and oxyhemoglobin have an absorption spectrum and a reflection spectrum of 450 nm-600 nm and 700 nm-900 nm, respectively.

Therefore, organs can be detected according to the light spectrum absorbed or reflected by the different organs of the human body, for instance, for analyzing haemoglobin content, oxygen saturation, scattering lipid content, etc., and an extension has been made to the field of food or polymer component detection. In recent years, an optoelectronic component capable of generating a wide infrared emission spectrum has been widely used in security camera, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging (LIDAR) technologies.

However, the infrared light emitted by optoelectronic components on the current market has disadvantages such as narrow emission spectrum, low radiant flux and the like, which cannot meet application requirements of the above medical component detection, intelligent technology and the like.

A luminescent material is a material that releases energy in the form of emitted light due to excitation from excitation light source. Currently, the luminescent material that is most studied and well-developed is mainly phosphor, especially phosphor excited by the blue chip for generating white LEDs, and the research has a focus on how to obtain emitted light (or called a secondary radiation) of a narrower wavelength range. The principle of white LED applies to the infrared phosphors converted LED also and hence it possesses advantages like low power consumption, compact, high lifetime and cheaper as compared to traditional light sources. In recent research, it is also reported that the use of phosphor is expanded to the security of anti-counterfeit and marker identification. For instance, it is reported that a study is made on the possibility of La₃Ga₅GeO₁₄: Cr³⁺ for the applications of persistent luminescence, which mainly utilizing the phosphorescence property of the phosphors, continuous emission of light for a long time after excitation is ceased off. However, there is no report about the phosphor which can produce wide red visible light and near-infrared spectrums when excited by blue visible light, purple visible light or ultraviolet light and has a high radiant flux, let alone its application in the optoelectronic component.

SUMMARY

In view of the above drawbacks in the prior art, the present application provides a phosphor capable of emitting near-infrared light and red visible light when excited by blue visible light, purple visible light or ultraviolet light and having a wide emission spectrum and a high radiant flux.

The present application further provides a method for preparing the above phosphor, the phosphor prepared by the method can emit near-infrared light and red visible light when excited by blue visible light, purple visible light or ultraviolet light, and has a wide emission spectrum and a high radiant flux.

The present application provides an optoelectronic component, which can use a conversion unit provided with the above phosphor to convert blue visible light, purple visible light or ultraviolet light emitted from a semiconductor chip into the near-infrared light and red visible light. The optoelectronic component has a wide emission spectrum and a high radiant flux in the ranges of near-infrared light and red visible light.

The present application further provides a method for producing an optoelectronic component, where the method has a characteristic of simple process and can produce an optoelectronic component that converts blue visible light, purple visible light or ultraviolet light into the near-infrared light and red visible light.

To achieve the above purpose, the present application provides a phosphor having the following general formula:La_3(1−x)Ga_1−yGe_5(1−z)O₁₆: 3xA³⁺, yCr³⁺, 5zB⁴⁺,  (General Formula I)where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; and B represents at least one of Sn, Nb, and Ta.

The phosphor is composed of a host material acting as a matrix and a dopant (or referred to as a luminescent center) acting as an activator, sometimes a sensitizer needs to be incorporated. The activator and the sensitizer replacing the ions in the original site of the matrix lattice.

Specifically, in the phosphor represented by the General Formula I, 0x0.5, 0y0.5, 0z0.5, and x, y, and z do not equal to 0 simultaneously. In a specific implementation of the present application, usually 03x0.3, 0y0.2, 05z0.2, and x, y and z do not equal to 0 simultaneously.

In a specific implementation of the present application, the phosphor has the following general formula:La₃Ga_1−yGe₅O₁₆: yCr³⁺,  (General Formula II)

where 0<y0.2.

In the phosphor represented by the General Formula II, La₃Ga_1−yGe₅O₁₆is a host material of the matrix, and Cr³⁺ is an activator. Adjusting the doping concentration of Cr³⁺, the emission spectrum of the phosphor is maintained in a near-infrared region and a red visible region, but the radiant flux changes accordingly; therefore, the doping concentration of Cr³⁺ is generally controlled to 0.5%-20%, it means, 0.005y0.2. In a specific implementation of the present application, the doping concentration of Cr³⁺ is usually controlled to 3.0%-11%, it means, 0.035y0.11, so that the phosphor has a high radiant flux.

In another implementation of the present application, the phosphor has the following general formula:La_3(1−x)Ga_1−yGe₅O₁₆: 3xA³⁺, yCr³⁺,  (General Formula III)where 03x0.3, 0y≤0.2, and x and y do not equal to 0 simultaneously, for instance, 0<3x0.3 and 0<y0.2; A represents at least one of Gd and Yb

In the phosphor represented by the General Formula III, the doping concentration of Cr³⁺ is fixed. For instance, the doping concentration of Cr³⁺ is controlled to less than 10%, that is, 0<y0.1; changing the doping concentration of A³⁺, the emission spectrum of the phosphor is maintained at the near-infrared region and the red visible region, but the radiant flux changes accordingly, therefore, the doping concentration of A³⁺ is generally controlled to 0.1%-10%, that is, 0.0033x0.3. In a specific implementation of the present application, the doping concentration of A³⁺ is generally controlled to 0.5%-5%, that is, 0.0153x0.15, so that the phosphor has a high radiant flux.

In still another implementation of the present application, in the phosphor having the General Formula I (La_3(1−x)Ga_1−yGe_5(1−z)O₁₆: 3xA³⁺, yCr³⁺, 5zB⁴⁺), 0<3x0.3, 0<y0.2, 0<5z0.2; A represents at least one of Gd and Yb; and B represents at least one of Sn, Nb and Ta.

In the phosphor represented by the General Formula I, the doping concentrations of Cr³⁺ and A³⁺ are fixed. For instance, it is controlled that 0<3x0.1, 0y0.1; changing the doping concentration of B⁴⁺, the emission spectrum of the phosphor is maintained in the near-infrared region and the red visible region, but the radiant flux changes accordingly, therefore, the doping concentration of B⁴⁺ is generally controlled to 0.5%-4%, that is, 0.025≤5z0.2. In a specific implementation process of the present application, the doping concentration of B⁴⁺ is generally controlled to 0.5%-3%, that is, 0.0255z0.15, so that the phosphor has a high radiant flux.

Specifically, the above phosphor satisfies at least one of the following three conditions based on the composition of La₃GaGe₅O₁₆:

Cr³⁺ replaces part of Ga³⁺;

A³⁺ replaces part of La³⁺;

B⁴⁺ replaces part of Ge⁴⁺.

For instance, for the phosphor represented by the General Formula II, the doped Cr³⁺ replaces part of Ga³⁺ in the matrix La₃GaGe₅O₁₆, or the incorporation of Cr³⁺ to replace Ga³⁺ on the original site of the matrix lattice.

When excited by blue visible light, purple visible light or ultraviolet light acting as a primary radiation, the above phosphor emits a secondary radiation within the ranges of the red visible light spectrum and the near-infrared spectrum and has a wide emission spectrum. In particular, the above phosphor has an emission spectrum of 650 -1500 nm, especially 650-1050 nm, when excited by excitation light having a wavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm.

Moreover, the phosphor has a high radiant flux within the range of the emission spectrum described above, and radiant flux of the light emitted by the phosphor is 4-70 mW.

In still another implementation of the present application, a phosphor having the following general formula is provided:La₃Ga_5(1−x)Ge_1−yO₁₄: 5xCr³⁺, ySn⁴⁺,  (General Formula IV)where 0<x0.1, 0y≤0.9.

In the phosphor represented by the General Formula IV, La₃Ga_5(1−x)Ge_1−yO₁₄ is used as a host material of the matrix, Cr³⁺ is used as an activator (or called a luminescent center), and Sn⁴⁺ is used as a sensitizer.

When excited by blue visible light, purple visible light or ultraviolet light acting as a primary radiation, the phosphor represented by the General Formula IV emits a secondary radiation within the ranges of the red visible light spectrum and the near-infrared spectrum and has a wide emission spectrum. Specifically, when excited by excitation light having a wavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm, the phosphor represented by the General Formula IV has an emission spectrum of 650-1500 nm, especially 650-1050 nm.

Specifically, based on the La₃Ga₅GeO₁₄ composition, in the phosphor represented by the General Formula IV, Cr³⁺ and Sn⁴⁺ partially replace the part of metal elements in the host material.

All of the above phosphors can be prepared by a conventional high-temperature solid-state reaction method in the art. Specifically, raw materials are stoichiometrically weighted according to the above general formula and mixed evenly in an agate mortar and then sintered at a certain temperature in the furnace, for instance, at a temperature of 1200-1500° C. to obtain a target product.

The present application further provides a method for preparing the above-described phosphor, including steps of preparing and mixing raw materials for providing elements in the general formula according to the general formula of the luminescent material and then sintering at a temperature of 1200-1500° C. to obtain a target phosphor.

Specifically, the raw materials are accurately weighed according to a designed formula, placed in an agate mortar to grind for evenly mixing, and then the mixture is sintered in an air atmosphere, generally, the temperature is controlled to 1250-1350° C. to sinter for about 5-6 hours, then the phosphor can be obtained.

The raw materials for preparing the phosphor described above may be specifically selected from oxide or carbonate containing the elements in the determined general formula or other compounds capable of providing corresponding metal elements. For instance, if the phosphor to be prepared has a molecular formula of La₃Ga_0.09Ge₅O₁₆:0.01Cr³⁺, then a weighted calculation may be performed for the desired raw materials La₂O₃, Ga₂O₃, Cr₂O₃ and GeO₂ according to a stoichiometric ratio in the molecular formula, and the weights of the raw materials are finally determined.

The present application provides an optoelectronic component including:

a semiconductor chip for emitting excitation light during operation of the optoelectronic component; and

a conversion unit provided with the above-described phosphor for converting the excitation light into emitted light.

Specifically, the excitation light acting as the primary radiation has a wavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm; the emitted light acting as the secondary radiation has a wavelength of 600-1500 nm, especially 600-1100 nm, and more particularly 650-1050 nm.

The above semiconductor chip is not particularly limited in the present application, as long as it can emit the primary radiation of the above wavelength during operation, such as a blue, purple or ultraviolet LED chip or laser chip which has been commercialized, especially a blue LED chip of 400-500 nm, more particularly a blue LED chip of 450 nm or a blue LED chip of 460 nm. In a specific implementation of the present application, a blue LED chip having an emission wavelength of 450-452.5 nm is used.

The above-described optoelectronic component is not particularly limited in the present application with regard to its specific form, as long as it can achieve the above functions. For instance, it may present in a form of an LED device including at least a blue, purple or ultraviolet LED chip for generating a primary radiation and a conversion unit for converting the primary radiation into a secondary radiation. The conversion unit is disposed in an optical path of the primary radiation and contains or is provided with the above-described phosphor.

The present application does not specifically limit how to obtain the conversion unit according to the above phosphor. It can be a common method in the field of optoelectronic components, especially LED devices, as long as a cooperation with the LED chip may be achieved to realize the conversion from the primary radiation to the secondary radiation. For instance, the phosphor is dispersed in a transparent epoxy resin in a certain ratio to obtain a conversion unit dispersed outside the LED chip.

The present application further provides a method for producing an optoelectronic component, including steps of:

producing a conversion unit on which the above phosphor is provided;

mounting the produced conversion unit on a semiconductor chip, where the semiconductor chip is used to generate excitation light during operation of the optoelectronic component.

The closer the phosphor is to the semiconductor chip, the higher or the lower its concentration is.

The closer the phosphor is to the semiconductor chip, the higher or the lower its concentration appears in a gradient manner.

The phosphor may be in direct or indirect contact with the semiconductor chip.

The phosphor may be a quantum dot phosphor.

Particles of the phosphor may be covered with at least one layer of oxide at its periphery, such as silicon dioxide.

Further, the method for producing the optoelectronic component described above may further include step for preparing the above-described phosphor: preparing and mixing the raw materials for providing elements in the general formula according to the general formula of the phosphor, and then sintering at a temperature of 1200-1500° C., for instance, sintering for about 5-6 hours at a temperature of about 1250-1350° C. to obtain the desired phosphor.

For the phosphor provided in the present application, its emission spectrum is within the red visible light and near-infrared light when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide emission spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs and laser devices to meet requirements of current medical testing, food composition analysis, security camera, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

The preparing method of the above phosphor provided in the present application has a characteristic of the simple process and is convenient for practical generalization and large-scale application.

The optoelectronic component provided in the present application can use a conversion unit provided with the above-described phosphor to convert blue, purple or ultraviolet light emitted from the semiconductor chip into near-infrared light and red visible light in order , and it has a wide emission spectrum and a high radiation flux in the ranges of near-infrared light and red visible light, so as to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Moreover, the optoelectronic component has a characteristic of the simple structure, can be improved and obtained on the basis of the existing optoelectronic component, and has an advantage of low manufacturing cost.

The method for producing the optoelectronic component provided in the present application has a characteristic of simple process and can be processed on the basis of the existing device component, further facilitating the generalization of the above-described optoelectronic component.

BRIEF DESCRIPTION OF DRAWING(S)

FIG. 1 is the X-ray diffraction spectrum of the phosphor La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ according to Example 1;

FIG. 2 is the X-ray diffraction spectrum of the phosphor La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺ according to Example 1;

FIG. 3 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ according to Example 1;

FIG. 4 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺ according to Example 1;

FIG. 5 is the X-ray diffraction spectrum of the phosphor La_2.97Ga_0.99Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺ according to Example 2;

FIG. 6 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La_2.97Ga_0.99Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺ according to Example 2;

FIG. 7 is the X-ray diffraction spectrum of the phosphor La_2.97Ga_0.99Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺ according to Example 3;

FIG. 8 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La_2.97Ga_0.99Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺ according to Example 3;

FIG. 9 is the X-ray diffraction spectrum of the phosphors according to Examples 4-5;

FIG. 10 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La_2.97Ga_0.93Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺ according to Example 4;

FIG. 11 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor La_2.97Ga_0.93Ge_4.95O₁₆: 0.03Gd^3±, 0.07Cr³⁺, 0.05Sn⁴⁺ according to Example 5;

FIG. 12 is a schematic structural diagram of the optoelectronic component according to Example 6;

FIG. 13 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Cr³⁺ according to Experimental Example 1;

FIG. 14 is a graph showing the relationship between the doping concentration of Cr³⁺ and the radiant flux according to Experimental Example 1;

FIG. 15 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Gd³⁺ according to Experimental Example 2;

FIG. 16 is a graph showing the relationship between the doping concentration of Gd³⁺ and the radiant flux according to Experimental Example 2;

FIG. 17 is the photoluminescence emission spectrum (excitation light has a wavelength of 450 nm) of the phosphor having different doping concentrations of Sn⁴⁺ according to Experimental Example 3;

FIG. 18 is a graph showing the relationship between the doping concentration of Sn⁴⁺ and the radiant flux according to Experimental Example 3;

FIG. 19 is the photoluminescence emission spectrum (the excitation light has a wavelength of 450 nm) of the La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_4.95Ge_0.9O₁₄: 0.05Cr³⁺ according to Comparative Example 1;

FIG. 20 is the X-ray diffraction spectrum of the phosphor according to Example 7;

FIG. 21 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor according to Example 7;

FIG. 22 is the X-ray diffraction spectrum of the phosphor La₃Ga_4.95Ge_0.9O₁₄: 0.05Cr³⁺, 0.1Sn⁴⁺ according to Example 8;

FIG. 23 is the X-ray diffraction spectrum of the phosphor La₃Ga_4.95Ge_0.7O₁₄: 0.05Cr³⁺, 0.3Sn⁴⁺ according to Example 8;

FIG. 24 is the X-ray diffraction spectrum of the phosphor La₃Ga_4.95Ge_0.5O₁₄: 0.05Cr³⁺, 0.5Sn⁴⁺ according to Example 8;

FIG. 25 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La₃Ga_4.95Ge_0.9O₁₄: 0.05Cr³⁺, 0.1Sn⁴⁺ according to Example 8;

FIG. 26 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La₃Ga_4.95Ge_0.7O₁₄: 0.05Cr³⁺, 0.3Sn⁴⁺ according to Example 8;

FIG. 27 is the photoluminescence emission spectrum (the excitation light has a wavelength of 460 nm) of the phosphor La₃Ga_4.95Ge_0.5O₁₄: 0.05Cr³⁺, 0.5Sn⁴⁺ according to Example 8; and

FIG. 28 is a schematic structural diagram of the optoelectronic component according to Example 9 of the present application.

DETAILED DESCRIPTION

In order to describe objectives, technical solutions and advantages of examples of the present application more clearly, the technical solutions in the examples of the present application will be described hereunder clearly and completely with reference to the accompanying drawings in the examples of the present application. The described examples are only a part of examples, rather than all examples of the present application. All other examples obtained by those skilled in the art based on the embodiments of the present application without any creative effort should fall within the scope of the present application.

The raw materials used in the following examples: La₂O₃, Ga₂O₃ and Cr₂O₃ have a purity of 99.9% respectively, all of which are commercially available from Merck; GeO₂ has a purity of 99.9%, which is commercially available from Aldrich; Gd₂O₃, Yb₂O₃ and SnO₂ have a purity of 99.9% respectively, all of which are commercially available from Sigma Aldrich.

The tubular and muffle furnace is commercially available from Eurotherm. The X-ray diffraction spectrum of the sample powders of the phosphor is measured by an X-ray diffractometer commercially available from BRUKER AXS with a model number of Desktop Bruker D2 PHASER A26-X1-A2B0B2A (Serial No. 205888). The photoluminescence emission spectrum of the sample powders of the phosphor is measured by Gemini 180 and iR320 commercially available from Horiba (Jobin Yvon).

EXAMPLE 1

The present example provides a set of phosphors having a general formula of La₃Ga_1−yGe₅O₁₆: yCr³⁺, where 0<y0.2, the chemical formulas of the set of phosphors are as follows:La₃Ga_0.995Ge₅O₁₆: 0.005Cr³⁺La₃Ga_0.99Ge₅O₁₆: 0.0 1Cr³⁺La₃Ga_0.97Ge₅O₁₆: 0.03Cr³⁺La₃Ga_0.95Ge₅O₁₆: 0.05Cr³⁺La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺La₃Ga_0.91Ge₅O₁₆: 0.09Cr³⁺La₃Ga_0.89Ge₅O₁₆: 0.11Cr³⁺La₃Ga_0.87Ge₅O₁₆: 0.13Cr³⁺

The preparing method of the set of phosphors is as follows: according to stoichiometric ratios in the molecular formulae of the phosphors, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂ and Cr₂O₃; placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere at a temperature of about 1250-1300° C. for about 5-6 hours; and after cooling with the furnace, grinding into powders to obtain a target phosphor.

FIG. 1 and FIG. 2 shows the X-ray diffraction spectrums of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺, respectively. X-ray diffraction spectrums of other phosphors in the set are similar to those in FIG. 1-FIG. 2. As shown in FIG. 1 and FIG. 2, the X-ray diffraction spectrum of the above two phosphors are respectively compared with a standard X-ray diffraction spectrum. All the diffraction peaks of the two phosphors are consistent with a standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is observed, indicating that the incorporation of Cr³⁺ incurred no changes in the crystal structure, that is, the activator Cr³⁺ successfully entered into the crystal lattice. Further, the crystals of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺ belong to a triclinic system, and a space group is P-1(2).

FIG. 3 and FIG. 4 shows the photoluminescence emission spectrums of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺, respectively. The photoluminescence emission spectrums of other phosphors are similar to those in FIG. 3 and FIG. 4. As shown in FIG. 3 and FIG. 4, when excited by excitation light of 460 nm or 450 nm, the emission spectrums of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺ cover the spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that, in the set of phosphors, the incorporation of Cr³⁺ replaces the lattice position of Ga³⁺ in the matrix.

EXAMPLE 2

The present example provides a phosphor having a molecular formula of La_2.97Ga_0.99Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺, the preparing method of the phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂, Gd₂O₃ and Cr₂O₃, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250° C. to sinter for about 6 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

As shown in FIG. 5, the X-ray diffraction spectrum of the phosphor is compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is detected, indicating that the activator Cr³⁺ and the sensitizer Gd³⁺ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

As shown in FIG. 6, when excited by the excitation light of 460 nm, the emission spectrum of La_2.97G_0.99Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺ covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that, in the phosphor, the incorporation of Cr³⁺ replaces the lattice position of Ga³⁺ in the matrix; similarly, the co-doped Gd³⁺ replaces La³⁺ on the original site of the matrix lattice.

EXAMPLE 3

The present example provides a phosphor having a molecular formula of La_2.97Ga_0.99Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺, the preparing method of the phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂, Yb₂O₃ and Cr₂O, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250° C. to sinter for about 6 hours; and after cooling with the furnace, grinding into powders to obtain the phosphor.

As shown in FIG. 7, the X-ray diffraction spectrum of the phosphor was compared with a standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is detected, indicating that the activator Cr³⁺ and the sensitizer Yb³⁺ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

As shown in FIG. 8, when excited by the excitation light of 460 nm, the emission spectrum of the phosphor La_2.97Ga_0.99Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺ covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that Cr³⁺ replaces Ga³⁺ on the original site in the matrix lattice. Similarly, the co-doped Yb³⁺ replaces La³⁺ on the original site in the matrix lattice.

EXAMPLE 4

The present example provides a set of phosphors having a general formula of La_3(1−x)Ga_1−yGe₅O₁₆: 3xA³⁺, yCr³⁺,where 0<3x+0.3, y=0.07, and A represents Gd, the chemical formulae of the set of phosphors are as follows, and reference may be made to Example 2 for the corresponding preparing method:La_2.985Ga_0.93Ge₅O₁₆: 0.015Gd³⁺, 0.07Cr³⁺La_2.97Ga_0.93Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺La_2.955Ga_0.93Ge₅O₁₆: 0.045Gd³⁺, 0.07Cr³⁺La_2.94Ga_0.93Ge₅O₁₆: 0.06Gd³⁺, 0.07Cr³⁺La_2.91Ga_0.93Ge₅O₁₆: 0.09Gd³⁺, 0.07Cr³⁺La_2.85Ga_0.93Ge₅O₁₆: 0.15Gd³⁺, 0.07Cr³⁺La_2.79Ga_0.93Ge₅O₁₆: 0.21Gd³⁺, 0.07Cr³⁺

FIG. 9 is the X-ray diffraction spectrum of the phosphor La_2.97Ga_0.93Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺, and XRD diffraction spectrums of other phosphors are similar to those in FIG. 9. As shown in FIG. 9, the X-ray diffraction spectrums of the phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphors are consistent with the standard spectrum JCPDS 890211 (ICSD-50521), and no impurity peak is observed, indicating that the activator Cr³⁺ and the Gd³⁺ successfully entered into the crystal lattice. Further, the crystals of the set of phosphors belong to the triclinic system, and the space group is P-1 (2).

FIG. 10 is the photoluminescence emission spectrum of the phosphor La_2.97Ga_0.93Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺. Photoluminescence emission spectrums of other phosphors are similar to those in FIG. 10. As shown in FIG. 10, when excited by the excitation light of 450 nm, the emission spectrum of the phosphor covers a range of 600-1100 nm, especially a range of 650-1050 nm.

Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that the incorporation of Cr³⁺ replaces Ga³⁺ on the original site in the matrix lattice. Similarly, the incorporation of co-doped Gd³⁺ replaces La³⁺ on the original site in the matrix lattice.

EXAMPLE 5

The present example provides a phosphor having a molecular formula of La_2.97Ga_0.93Ge_4.95O₁₆: 0.03Gd³⁺, 0.07Cr³⁺, 0.05Sn⁴⁺. The preparing method of the phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of the phosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂, Gd₂O₃, Cr₂O₃ and SnO₂, and placing the weighed raw materials into an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250° C. to sinter for about 5 hours; and after cooling with the furnace, grinding into powders to obtain the phosphor.

As shown in FIG. 9, the X-ray diffraction spectrums of the phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the phosphor are consistent with the standard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak is observed, indicating that the activator Cr³⁺, the sensitizers Gd³⁺ and Sn⁴⁺ successfully entered into the crystal lattice. Further, the crystal of the phosphor belongs to the triclinic system, and the space group is P-1 (2).

As shown in FIG. 11, when excited by the excitation light of 450 nm, the emission spectrum of the phosphor covers a spectral range of 600-1100 nm, especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering the ionic radius and valence state, it can be determined that the incorporation of Cr³⁺ replaces Ga³⁺ on the original site in the matrix lattice. Similarly, the incorporation of co-doped Gd³⁺ and Sn⁴⁺ replaces La³⁺ and Ge⁴⁺ on the original sites in the matrix lattice, respectively.

EXAMPLE 6

This example provides an optoelectronic component. As shown in FIG. 12, the optoelectronic component 1 includes a housing 6 provided with a recess 8, a semiconductor chip 2 for emitting a primary radiation, and a first lead 4 and a second lead 5 respectively connected to the a housing 6. An inner side wall of the recess 8 is coated with a suitable material to reflect the emitted light with the assistance of a reflector cup 7; the semiconductor chip 2 is mounted in the recess 8 and is respectively connected to the first lead 4 and the second lead 5 which are opaque; a conversion unit 3 is mounted on an optical path of the primary radiation emitted from the semiconductor chip 2. The conversion unit 3 contains or is provided with the phosphor according to Examples 1-5 described above. Specifically, the phosphor is dispersed in the epoxy resin, and the conversion unit 3 is produced and dispersed outside the semiconductor chip 2 to absorb the primary radiation emitted from the semiconductor chip 2 and convert into a secondary radiation.

The basic parameters of the above optoelectronic component 1 are shown in Table 1; under these basic parameters, the measurement results of the radiant flux obtained when part of the phosphors in Examples 1-5 is used for the conversion unit 3 are shown in Table 2.

TABLE 1
LED			Phosphor
packaging		Silicone	content in the
bracket	LED chip specifications	encapsulant	conversion unit
PPA3535	Size: 40 mil * 40 mil	1.4 Silicone	50 wt %
	Luminescence wavelength:
	450-452.5 nm
	Power: 109.7 mW

TABLE 2
			Radiant flux
Phosphor chemical	Total	Radiant flux	(λ =
formula	radiant flux	(λ = 372-650 nm)	650-1050 nm)
La3Ga0.99Ge5O16:	344.2 mW	326.8 mW	17.6 mW
0.01Cr3+
La2.97Ga0.99Ge5O16:	581.5 mW	558.8 mW	25.7 mW
0.03Gd3+, 0.01Cr3+
La2.97Ga0.99Ge5O16:	295.1 mW	286.0 mW	9.1 mW
0.03Yb3+, 0.01Cr3+
La3Ga0.93Ge5O16:	366.2 mW	323.1 mW	43.1 mW
0.07Cr3+
La2.97Ga0.93Ge5O16:	307.8 mW	251.5 mW	56.3 mW
0.07Cr3+, 0.03Gd3+
La2.67Ga0.93Ge4.95O16:	284.0 mW	218.8 mW	65.2 mW
0.07Cr3+, 0.03Gd3+,
0.05Sn4+

As can be seen from Table 2, the phosphor provided in the present application has a radiant flux of 4-70 mW in the wavelength range of 650-1050 nm and thus has a high radiant flux.

EXPERIMENTAL EXAMPLE 1

The present experimental example aims to investigate the effects of different doping concentrations of Cr³⁺ on the radiant flux. Taking the phosphor having the general formula of La₃Ga_1−yGe₅O₁₆: yCr³⁺ (0<y0.1)as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Cr³⁺ and the corresponding radiant flux are shown in Table 3; the photoluminescence emission spectrums of phosphors with different doping concentrations of Cr³⁺ are shown in FIG. 13; and a graph showing the relationship between the doping concentration of Cr³⁺ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 14.

TABLE 3
	Doping	Radiant flux
Phosphor chemical formula	concentration - Cr3+	(λ = 650-1050 nm)
La3Ga0.995Ge5O16: 0.005Cr3+	0.5%	9.1 mW
La3Ga0.99Ge5O16: 0.01Cr3+	1%	17.6 mW
La3Ga0.97Ge5O16: 0.03Cr3+	3%	31.0 mW
La3Ga0.95Ge5O16: 0.05Cr3+	5%	34.1 mW
La3Ga0.93Ge5O16: 0.07Cr3+	7%	43.1 mW
La3Ga0.91Ge5O16: 0.09Cr3+	9%	38.6 mW
La3Ga0.89Ge5O16: 0.11Cr3+	11%	30.3 mW
La3Ga0.87Ge5O16: 0.13Cr3+	13%	28.6 mW

As can be seen from Table 3 and FIG. 13-FIG. 14, in the phosphor La₃Ga_1−yGe₅O₁₆: yCr³⁺ (0<y0.1), when the doping concentration of Cr³⁺ is not less than 0.5%, the radiant flux is higher than 9.0 mW; when the doping concentration of Cr³⁺ is increased to 3.0%-11%, the radiant flux is higher than 30 mW. Moreover, as the doping concentration of Cr³⁺ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Cr³⁺ is about 7% (the corresponding phosphor is La₃Ga_0.93Ge₅O₁₆: 0.07Cr³⁺), the radiant flux reaches the highest of 43.1 mW.

EXPERIMENTAL EXAMPLE 2

The present experimental example aims to investigate the effects of different doping concentrations of Gd³⁺ on the radiant flux Taking the phosphor having the general formula of La_3(1−x)Ga_1−yGe₅O₁₆: 3xGd³⁺: yCr³⁺ (0<3x+0.3, y=0.07) as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Gd³⁺ and the corresponding radiant flux are shown in Table 4; the photoluminescence emission spectrums of the phosphors with different doping concentrations of Gd³⁺ are shown in FIG. 15; and a graph showing the relationship between the doping concentration of Gd³⁺ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 16.

TABLE 4
		Radiant flux
	Doping	(λ =
	concentration -	650-1050
Phosphor chemical formula	Gd3+	nm)
La2.985Ga0.93Ge5O16: 0.015Gd3+: 0.07Cr3+	0.5%	51.0 mW
La2.97Ga0.93Ge5O16: 0.03Gd3+: 0.07Cr3+	1.0%	56.3 mW
La2.955Ga0.93Ge5O16: 0.045Gd3+: 0.07Cr3+	1.5%	55.6 mW
La2.94Ga0.93Ge5O16: 0.06Gd3+: 0.07Cr3+	2.0%	44.7 mW
La2.91Ga0.93Ge5O16: 0.09Gd3+: 0.07Cr3+	3.0%	42.2 mW
La2.85Ga0.93Ge5O16: 0.15Gd3+ 0.07Cr3+	5.0%	32.7 mW
La2.94Ga0.93Ge5O16: 0.21Gd3+: 0.07Cr3+	7.0%	25.6 mW

As can be seen from Table 4 and FIG. 15-FIG. 16, in the phosphor La_3(1−x)Ga_1−yGe₅O₁₆: 3xGd³⁺: yCr³⁺, when the doping concentration of Gd³⁺ is 0.5%-5%, the radiant flux is greater than 30 mW; when the doping concentration of Gd³⁺ is 0.5%-1.5%, the radiant flux is even greater than 50 mW. Moreover, as the doping concentration of Gd³⁺ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Gd³⁺ is about 1% (the corresponding phosphor is La_2.97Ga_0.93Ge₅O₁₆: 0.03Gd³⁺: 0.07Cr³⁺), the radiant flux reaches the highest of 56.3 mW.

EXPERIMENTAL EXAMPLE 3

This experimental example aims to investigate the effects of different doping concentrations of Sn⁴⁺ on the radiant flux. Taking the phosphor having the general formula of La_3(1−x)Ga_1−yGe_5(1−z)O₁₆: 3xGd³⁺, yCr³⁺, 5zSn⁴⁺ (3x=0.03, y=0.01, 0<5z0.2) as an example, the basic parameters of the optoelectronic component used for testing are shown in Table 1; the doping concentration of Sn⁴⁺and the corresponding radiant flux are shown in Table 5; the photoluminescence emission spectrums of phosphors with different doping concentrations of Sn⁴⁺ are shown in FIG. 17; and a graph showing the relationship between the doping concentration of Sn⁴⁺ and the radiant flux (the wavelength range is 650-1050 nm) is shown in FIG. 18.

TABLE 5
	Doping
	concen-	Radiant flux
	tration -	(λ =
Phosphor chemical formula	Sn4+	650-1050 nm)
La2.97Ga0.99Ge4.975O16: 0.03Gd3+: 0.01Cr3+:	0.5%	47.0 mW
0.025Sn4+
La2.97Ga0.99Ge4.95O16: 0.03Gd3+: 0.01Cr3+:	1.0%	65.2 mW
0.05Sn4+
La2.97Ga0.99Ge4.925O16: 0.03Gd3+: 0.01Cr3+:	1.5%	50.3 mW
0.075Sn4+
La2.97Ga0.99Ge4.9O16: 0.03Gd3+: 0.01Cr3+:	2.0%	41.5 mW
0.1Sn4+
La2.97Ga0.99Ge4.85O16: 0.03Gd3+: 0.01Cr3+:	3.0%	40.9 mW
0.15Sn4+

As can be seen from Table 5 and FIG. 17-FIG. 18, in the phosphor La_3(1−x)Ga_1−yGe_5(1−z)O₁₆: 3xGd³⁺, yCr³⁺, 5zSn⁴⁺, when the doping concentration of Sn⁴⁺is greater than or equal to 0.5%, the radiant flux is greater than 40 mW. Moreover, as the doping concentration of Sn⁴⁺ increases, the radiant flux first increases to the peak value accordingly and then decreases. When the doping concentration of Sn⁴⁺ is about 1% (the corresponding phosphor is La_2.97Ga_0.99Ge_4.95O₁₆: 0.03Gd³⁺: 0.01Cr³⁺: 0.05Sn⁴⁺), the radiant flux reaches the highest of 65.2 mW.

COMPARATIVE EXAMPLE 1

The present comparative example provides a phosphor having a chemical formula of La₃Ga_4.95GeO₁₄: 0.05Cr³⁺ (the doping concentration of Cr³⁺ is 1%), a comparison between the radiant flux of the phosphor and that of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺ is shown in Table 6; FIG. 19 is the photoluminescence emission spectrum of the above two phosphors. As shown in Table 6 and with reference to FIG. 19, in both the visible range of 372-650 nm and the red visible and near-infrared range of 650-1050 nm, the radiant flux of La₃Ga_4.95GeO₁₄: 0.05Cr³⁺ is significantly smaller than the radiant flux of La₃Ga_0.99Ge₅O₁₆: 0.01Cr³⁺, indicating that the phosphor provided in the present application is far superior to the conventional phosphors.

TABLE 6
Phosphor	Total	Radiant flux	Radiant flux
chemical formula	radiant flux	(λ = 372-650 nm)	(λ = 650-1050 nm)
La3Ga4.95GeO14:	195.6 mW	184.5 mW	10.1 mW
0.05Cr3+
La3Ga0.99Ge5O16:	344.2 mW	326.8 mW	17.6 mW
0.01Cr3+

EXAMPLE 7

The present example provides a set of phosphors having the general formula of La₃Ga_5(1−x)Ge_1−yO₁₄: 5xCr³⁺, ySn⁴⁺, where 0<x<0.1, y=0. The chemical formulae of the set of phosphors are as follows:

La₃Ga_4.95GeO₁₄: 0.05Cr³⁺

La₃Ga_4.75GeO₁₄: 0.25Cr³⁺

La₃Ga_4.55GeO₁₄: 0.45Cr³⁺

The preparing method of the set of phosphor is as follows: according to stoichiometric ratios in the molecular formulae of the set of phosphors, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂ and Cr₂O₃; placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a tubular furnace and sintering in an air atmosphere; controlling the temperature at about 1300° C. to sinter for about 5 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

As shown in FIG. 20, the XRD diffraction spectrums of the set of phosphors are compared with the standard spectrum JCPDS 722464 (ICSD-20783). The diffraction peaks of the set of phosphors are consistent with the standard spectrum and no impurity peak is detected, indicating that the activator Cr³⁺ and the sensitizer Sn⁴⁺ successfully entered into the crystal lattice. The crystals of the set of phosphors belong to the triclinic system, and the space group is P-1(2).

As shown in FIG. 21, when excited by the excitation light of 460 nm, the emission spectrum of the set of phosphors cover a range of 600-1250 nm, especially a range of 650-1050 nm.

EXAMPLE 8

The present example provides a set of phosphors having the general formula of La₃Ga_5(1−x)Ge_1−yO₁₄: 5xCr³⁺, ySn⁴⁺, where x=0.01, 0<y0.9. The chemical formulae of the set of phosphors are as follows:

La₃Ga_4.95Ge_0.9O₁₄: 0.05Cr³⁺, 0.1Sn⁴⁺;

La₃Ga_4.95Ge_0.7O₁₄: 0.05Cr³⁺, 0.3Sn⁴⁺;

La₃Ga_4.95Ge_0.5O₁₄: 0.05Cr³⁺, 0.5Sn⁴⁺.

The preparing method of the set of phosphors is as follows: according to stoichiometric ratios in the molecular formulae of the set of phosphors, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂, SnO₂ and Cr₂O₃; and placing the weighed raw materials in an agate mortar to grind for evenly mixing; then transferring the resulting mixture to an alumina crucible; placing in a muffle furnace and sintering in an air atmosphere; controlling the temperature at about 1250° C. to sinter for about 5 hours; and after cooling in the furnace, grinding into powders to obtain the phosphor.

As shown in FIG. 11-FIG. 24, the X-ray diffraction spectrums of the set of phosphors are compared with the standard X-ray diffraction spectrum. All the diffraction peaks of the set of phosphors are consistent with the standard spectrum JCPDS 722464 (ICSD-20783) and no impurity peak is detected, indicating that the activator Cr³⁺ and the sensitizer Sn⁴⁺ successfully entered into the crystal lattice. Further, the crystals of the set of phosphors belong to the triclinic system, and the space group is P-1(2).

As shown in FIG. 25-FIG. 27, when excited by the excitation light of 460 nm, the emission spectrums of the set of phosphors cover a range of 600-1100 nm, especially a range of 650-1050 nm.

EXAMPLE 9

The present example provides an optoelectronic component. As shown in FIG. 28, the optoelectronic component includes a housing 11 provided with a recess 16, a semiconductor chip 12 for emitting a primary radiation, and a first lead 14 and a second lead 15 respectively connected to the housing 11. An inner side wall of the recess 16 is coated with a suitable material to achieve a selective reflection of light; the semiconductor chip 12 is mounted in the recess 16 and is respectively connected to the first lead 14 and the second lead 15 which are opaque. a conversion unit 13 is mounted on an optical path of the primary radiation emitted from the semiconductor chip 12. The conversion unit 13 contains or is provided with the phosphor according to Example 7 described above. Specifically, the phosphor is dispersed in the epoxy resin, and the conversion unit 13 is produced and dispersed outside the semiconductor chip 12 to absorb the primary radiation emitted from the semiconductor chip 12 and converted into a secondary radiation.

The basic parameters of the above optoelectronic component are shown in Table 7; under these basic parameters, the measurement results of the radiant flux obtained when part of the phosphors provided in Example 7 is used for the conversion unit 13 are shown in Table 8. The measurement results of the radiant flux obtained when part of the phosphors provided in Example 8 is used for the conversion unit 13 are shown in Table 9.

TABLE 7
LED			Phosphor
packaging		Silicone	content in the
bracket	LED chip specifications	encapsulant	conversion unit
PPA3535	Size: 40 mil * 40 mil	1.4 Silicone	50 wt %
	Luminescence wavelength:
	450-452.5 nm
	Power: 109.7 mW

TABLE 8
	Doping
	concentration -	Radiant flux
Phosphor chemical formula	Cr3+	(λ = 650-1050 nm)
La3Ga4.95GeO14: 0.05Cr3+	1%	10.5 mW
La3Ga4.75GeO14: 0.25Cr3+	5%	7.8 mW
La3Ga4.55GeO14: 0.45Cr3+	9%	4.7 mW

As shown in Table 8, as the doping concentration of Cr³⁺ is gradually increased, the radiant flux is correspondingly decreased, but when the doping concentration of Cr³⁺ is 9%, the radiant flux corresponding to the phosphor is still greater than 4 mW.

TABLE 9
	Total
Phosphor chemical	radiant	Radiant flux	Radiant flux
formula	flux	(λ = 372-650 nm)	(λ = 650-1050 nm)
La3Ga4.95Ge0.9O14:	150.6 mW	135.8 mW	14.8 mW
0.05Cr3+, 0.1Sn4+
La3Ga4.95Ge0.7O14:	125.3 mW	111.5 mW	13.8 mW
0.05Cr3+, 0.3Sn4+
La3Ga4.95Ge0.5O14:	157.9 mW	143.6 mW	14.3 mW
0.05Cr3+, 0.5Sn4+

Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, rather than limiting the present application; a person skilled in the art may still modify the technical solutions described in the foregoing examples, or make equivalent replacements to some or all of the technical features therein. However, these modifications or replacements do not make the essence of corresponding technical solutions depart from the scope of the technical solutions in the examples of the present application, but should fall into the scope of the claims and specification of the present application.

Claims

1. A phosphor comprising the following general formula: La3(1−x)Ga1−yGe5(1−z)O16: 3xA3+, yCr3+, 5zB4+, wherein x<1,0<y<1, z<1, and x and z do not equal to 0 simultaneously;A represents at least one of Gd and Yb; andB represents at least one of Sn, Nb, and Ta.

2. The phosphor according to claim 1, wherein 0<3x0.3, 0<y0.2, 05z0.2.

3. The phosphor according to claim 1, wherein 03x0.3, 0<y0.2, 0<5z0.2.

4. The phosphor according to claim 1, further comprising the following general formula: La3(1−x)Ga1−yGe5O16: 3xA3+, yCr3+, wherein 0<3x0.3, 0<y0.2.

5. The phosphor according to claim 1, further emitting light in a range of 600-1500 nm when excited by the excitation light having a wavelength of 400-500 nm.

6. The phosphor according to claim 5, further emitting the light comprising a radiant flux 4-70 mW.

7. The phosphor according to claim 1, being prepared by a method comprising steps of: Weighing starting precursors selected from oxide or carbonate containing materials and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500° C. for about 5-6 hours to obtain the phosphor.

8. The phosphor according to claim 1, being prepared by a method comprising steps of: Preparing and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500° C. to obtain the phosphor.

9. An optoelectronic component, comprising: a semiconductor chip for emitting excitation light during operation of the optoelectronic component; anda conversion unit provided with the phosphor according to claim 1 for converting the excitation light into emitted light.

10. The optoelectronic component according to claim 9, wherein the excitation light has a wavelength of 450 nm or 460 nm, and the emitted light has a wavelength of 650-1050 nm.

11. The optoelectronic component according to claim 9, wherein the semiconductor chip is a blue LED chip.

12. A method for producing an optoelectronic component, comprising steps of: producing a conversion unit on which the phosphor according to claim 1 is provided; andmounting the conversion unit on a semiconductor chip, wherein the semiconductor chip is used to generate excitation light during operation of the optoelectronic component.