Claims
- 1. A room having a photocatalytic function, said room comprising:
- enclosing surfaces including vertical walls, a floor and a ceiling defining an interior for the room;
- a thin film of a photocatalytic semiconductor material having a band gap energy and covering at least a part of the enclosing surfaces of the room;
- an electric lamp mounted on one of said enclosing surfaces in a position whereby said semiconductor material is in a light receiving relationship with said lamp, said lamp being an electric lamp for general lighting applications emitting a visible light for illumination and at least a small amount of ultraviolet radiation within the wavelength range between 300 nm and the wavelength corresponding to the band gap energy of said semiconductor material, the wattage of said electric lamp and the distance between said semiconductor material and said lamp being such that, when said lamp is energized, the total incident light intensity, impinging upon said semiconductor material, of said ultraviolet radiation within said wavelength range is 0.001 to 1 mW/cm.sup.2.
- 2. A room according to claim 1, wherein said thin film is impinged by said ultraviolet radiation with an intensity of 0.1-0.01 mW/cm.sup.2.
- 3. A room according to claim 1, wherein said electric lamp is mounted on said ceiling.
- 4. A room according to claim 1, which is a hospital room.
- 5. A room according to claim 1, wherein said electric lamp is a low-pressure mercury fluorescent lamp capable of emitting light including ultraviolet radiation having wavelengths of about 313 and 365 nm.
- 6. A room according to claim 1, wherein said electric lamp is a low-pressure mercury fluorescent lamp capable of emitting light including ultraviolet radiation having a wavelength of 350-360 nm.
- 7. A room according to claim 1, wherein said electric lamp is a high intensity discharge lamp.
- 8. A room according to claim 7, wherein said high intensity discharge lamp is a metal halide lamp.
- 9. A room according to claim 1, wherein said electric lamp is an incandescent lamp.
- 10. A room according to claim 1, wherein said semiconductor material comprises the anatase form of titanium dioxide.
- 11. A room according to claim 1, wherein the thickness of said thin film is about 0.3-10 micrometers.
- 12. A room according to claim 1, wherein said thin film of titanium dioxide is supported on a substrate affixed to at least said part of said enclosing surfaces.
- 13. A room according to claim 12, wherein said substrate is a glazed ceramic tile.
- 14. A room according to claim 1, wherein said semiconductor material comprises metalized particles of the rutile form of titanium dioxide.
- 15. A glazed ceramic bathroom fixture selected from the group consisting of urinals, wash basins and toilet bowls, said bathroom fixture having a surface at least partially covered with a thin film of a photocatalytic semiconductor material.
- 16. A glazed ceramic article according to claim 15 wherein said semiconductor material comprises anatase titanium dioxide.
- 17. A glazed ceramic article according to claim 15 wherein the thickness of said thin film is about 0.3-10 micrometers.
- 18. A glazed ceramic tile having a surface at least partially covered with a thin film of a photocatalytic semiconductor material.
- 19. A glazed ceramic article according to claim 18 wherein said semiconductor material comprises anatase titanium dioxide.
- 20. A glazed ceramic article according to claim 18 wherein the thickness of said thin film is about 0.3-10 micrometers.
CROSS-REFERENCE TO RELATED APPLICATION:
This application is a division of U.S. Ser. No. 08/630,468 filed Apr. 10, 1996 and entitled "PHOTOCATALYTIC AIR TREATMENT PROCESS UNDER ROOM LIGHT", now U.S. Pat. No. 5,874,701. which is a continuation of U.S. Ser. No. 08/256,392 which, in turn, was filed as a U.S. National Phase of PCT/JP93/01598, Nov. 5, 1993 and published as WO94/11092, May 26, 1994.
US Referenced Citations (8)
Foreign Referenced Citations (7)
Number |
Date |
Country |
63-267876 |
Nov 1988 |
JPX |
1-139139 |
May 1989 |
JPX |
2-280818 |
Nov 1990 |
JPX |
3-8448 |
Jan 1991 |
JPX |
4272337 |
Sep 1992 |
JPX |
4-307066 |
Oct 1992 |
JPX |
4-307065 |
Oct 1992 |
JPX |
Non-Patent Literature Citations (3)
Entry |
Fujishima et al, "Electrochemical Photolysis of Water at a Semiconductor Electrode", Nature, vol. 238, Jul. 7, 1998, pp. 37-38. |
H. Kawaguchi, "Photocatalytic Decomposition of Phenol in the Presence of Titanium Dioxide", Environmental Technology Letters, vol. 5, pp. 471-474, 1984. |
Allen J. Bard, "Photoelectrochemistry and Heterogeneous Photocatalysts of Semiconductors", Journal of Photochemistry, 10 (1979), pp. 59-75. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
630468 |
Apr 1996 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
256392 |
|
|