D.G. Fisher, R.E. Enstrom, J.S. Escher, H.F. Gossenberger, and J.R. Appert, Photoemission Characteristics of Transmission-Mode Negative Electron Affinity GaAs and (In,Ga)As Vapor-Grown Structures, IEEE Transactions on Electron Devices, vol. ED-21, No. 10 pp. 641-649 (1974). |
R.E. Nahory, M.A. Pollack, and J.C. DeWinter, Growth and characterization of liquid-phase epitaxial In.sub.x Ga.sub.1-x As, Journal of Applied Physics, vol. 46, No. 2 pp. 775-782 (1975). |
A.H. Sommer, The element of luck in research-photocathodes 1930 to 1980, J. Vac. Sci. Technol. A 1(2), pp. 119-124, Apr.-Jun. 1983. |
G. Vergara, L.J. Gomez, J. Capmany and M.T. Montojo, Adsorption kinetics of cesium and oxygen on GaAs(100), Surface Science 278 pp. 131-145 (192). |
D.G. Fisher, R.E. Enstrom, J.S. Escher, and B.F. Williams, Photoelectron surface escape probability of (Ga,In)As: Cs-O In the 0.9 to .apprxeq. 1.6 .mu. range*, J. Appl. Phys. vol. 43, No. 9, pp. 3815-3823 (1972). |
R.L. Bell, L.W. James, and R.L. Moon, Transferred electron photoemission from InP.dagger., Appl. Phys. Letters, vol. 25, No. 11, pp. 645-646 (1974). |
J.S. Escher and R. Sankaran, Transferred Electron Photoemission to 1.4 .mu., Appl. Phys. Lett. 29, 87 (1976). |
J.S. Escher, P.E. Gregory, S.B. Hyder, and R. Sankaran, Transferred-electron photoemission to 1.65.mu.from InGaAs.sup.a), J. Appl. Phys. 49(4), pp. 2591-2592 (1978). |
P.E. Gregory, J.S. Escher, S.B. Hyder, Y.M. Houng, and G.A. Antypas, Field-assisted minority carrier electron transport across a p-InGaAs/p-InP heterojunction.sup.a), J. Vac. Sci. Technol. 15(4), pp. 1483-1487 (1978). |
J.S. Escher, R.L. Bell, P.E. Gregory, S.Y. Hyder, T.J. Maloney, and G.A. Antypas, Field-Assisted Semiconductor Photoemitters for the 1-2 .mu. Range, IEEE Transactions on Electron Devices ED-27, No. 7, pp. 1244-1250 (1980). |
J.S. Escher, P.E. Gregory, S.B. Hyder, R.R. Saxena, and R.L. Bell, Photoelectric Imaging in the 0.9-1.6 Micron Range*, IEEE Electron Device Letters, vol. EDL-2, No. 5, pp. 123-125 (1981). |
K. Costello, G. Davis, R. Weiss, and V. Aebi, SPIE Proceedings,: Electron Image Tubes and Image Intensifiers II, vol. 1449 (1991). |
I.P. Csorba, Recent advancements in the field of image intensification: the generation 3 wafer tube, Applied Optics, vol. 18(14), pp. 2440-2444 (Jul. 1979). |
I.P. Csorba, Current Status of Image Intensification, Miltronics, pp. 2-11 (Mar./May 1981). |
I.P. Csorba, Current Status and Performance Characteristics of Night Vision Aids, Opto-Electronic Imaging, Chapter 3, pp. 34-63 (1985). |
K.A. Costello, V.W. Aebi and H.F. MacMillan, Imaging GaAs Vacuum Photodiode with 40% Quantum Efficiency at 530 nm, SPIE vol. 1243 Electron Image Tubes and Image Intensifiers pp. 99-104(1990). |
A.A. Narayanan, D.G. Fisher, L.P. Erickson and G.D. O'Clock, Negative electoron affinity gallium arsenide photocathode grown by molecular beam epitaxy, J. Appl. Phys. vol. 56(6) pp. 1886-1887 Sep. 15, 1984. |
Stringfellow, G.B., "Lattice Parameters and Crystal Structure of Indium-Gallium-Arsenide," Properties of Lattice-Matched and Strained Indium-Gallium-Arsenidei, P. Bhattacharya, Edit, Institution of Electrical Engineers, London, United Kingdom, 1993. |
Takahashi, N.S., "Lattice Parameters, Molecular and Crystal Densitites of Aluminun-Gallium-Arsenide," Properties of Aluminum-Gallium-Arsenide, S. Adachi, Editor, Institution of Electrical Engineers, London, United Kingdom, 1993. |