C. Stampfl, et al., Doping of AlxGa1-xN, Appl. Phys. Lett. 72(4), Jan. 26, 1998, pp. 459-461. |
M.A. Khan et al., Properties and ion implantation of AlzGa1-xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition, App. Phys. Lett. 43 (5), Sep. 1, 1983, pp. 492-494. |
C. Stampfl et al., Doping of AlGaN, Appl. Phys. Lett. 72(4) Jan. 26, 1998; pp. 459-461. |
M.A. Khan et al., Properties and ion implantation of AlGaN epitaxial single crystals prepared by low pressure metalorganic chemical vapor deposition, Appl. Phys. Lett. 43 5 Sep. 1, 1983, pp. 492-494. |